CS218597B2 - Semiconductor facility activated by the light - Google Patents
Semiconductor facility activated by the light Download PDFInfo
- Publication number
- CS218597B2 CS218597B2 CS804293A CS429380A CS218597B2 CS 218597 B2 CS218597 B2 CS 218597B2 CS 804293 A CS804293 A CS 804293A CS 429380 A CS429380 A CS 429380A CS 218597 B2 CS218597 B2 CS 218597B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- light guide
- light
- semiconductor device
- photosensitive surface
- diameter
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000013307 optical fiber Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000003780 insertion Methods 0.000 claims description 10
- 230000037431 insertion Effects 0.000 claims description 10
- 229920002379 silicone rubber Polymers 0.000 claims description 7
- 239000004945 silicone rubber Substances 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 14
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4401—Optical cables
- G02B6/4415—Cables for special applications
- G02B6/4427—Pressure resistant cables, e.g. undersea cables
- G02B6/4428—Penetrator systems in pressure-resistant devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7714879A JPS561577A (en) | 1979-06-19 | 1979-06-19 | Light-driving semiconductor device |
JP13865979A JPS5662379A (en) | 1979-10-29 | 1979-10-29 | Optical operated semiconductor |
JP14066379A JPS5664479A (en) | 1979-10-31 | 1979-10-31 | Light driving semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
CS218597B2 true CS218597B2 (en) | 1983-02-25 |
Family
ID=27302346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CS804293A CS218597B2 (en) | 1979-06-19 | 1980-06-18 | Semiconductor facility activated by the light |
Country Status (5)
Country | Link |
---|---|
US (1) | US4368481A (de) |
EP (1) | EP0021352B1 (de) |
CA (1) | CA1156340A (de) |
CS (1) | CS218597B2 (de) |
DE (1) | DE3069659D1 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5788770A (en) * | 1980-11-21 | 1982-06-02 | Hitachi Ltd | Photo semiconductor device |
US4450461A (en) * | 1981-07-24 | 1984-05-22 | General Electric Company | Low cost high isolation voltage optocoupler with improved light transmissivity |
JPS5897864A (ja) * | 1981-12-07 | 1983-06-10 | Mitsubishi Electric Corp | 光トリガサイリスタ |
JPS58158460U (ja) * | 1982-04-16 | 1983-10-22 | 三菱電機株式会社 | 半導体発光装置 |
JPS5931062A (ja) * | 1982-08-12 | 1984-02-18 | Mitsubishi Electric Corp | サイリスタ |
GB2127220B (en) * | 1982-08-31 | 1986-04-23 | Tokyo Shibaura Electric Co | Light-triggered semiconductor device and light guide thereto |
JPS5998556A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | 光トリガサイリスタ |
DE3337131A1 (de) * | 1983-10-12 | 1985-04-25 | Siemens AG, 1000 Berlin und 8000 München | Glasfaserdurchfuehrung durch eine wandoeffnung eines gehaeuses |
US4675624A (en) * | 1985-03-29 | 1987-06-23 | Rca Corporation | Electrical phase shifter controlled by light |
US4757366A (en) * | 1985-04-12 | 1988-07-12 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low-loss feed of the trigger energy |
US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
DE3606588A1 (de) * | 1986-02-28 | 1987-09-03 | Siemens Ag | Gasdichte durchfuehrung einer glasfaser |
US4751513A (en) * | 1986-05-02 | 1988-06-14 | Rca Corporation | Light controlled antennas |
US4812002A (en) * | 1986-10-24 | 1989-03-14 | Hitachi, Ltd. | Optical coupling device and method of making the same |
DE3706255C2 (de) * | 1987-02-26 | 1995-07-06 | Siemens Ag | Lichtzündbarer Thyristor mit zusätzlichem elektrischen Gatekontakt |
US4841313A (en) * | 1987-06-16 | 1989-06-20 | Delphax Systems | RF driver and control |
US4899204A (en) * | 1987-12-01 | 1990-02-06 | General Electric Company | High voltage switch structure with light responsive diode stack |
US4825081A (en) * | 1987-12-01 | 1989-04-25 | General Electric Company | Light-activated series-connected pin diode switch |
JPH0372683A (ja) * | 1989-08-11 | 1991-03-27 | Toshiba Corp | 反射型センサ |
JPH06237016A (ja) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 光ファイバモジュールおよびその製造方法 |
JP3313559B2 (ja) * | 1995-12-20 | 2002-08-12 | 三菱電機株式会社 | 光トリガサイリスタ |
JP3369404B2 (ja) * | 1996-06-14 | 2003-01-20 | 三菱電機株式会社 | 光トリガサイリスタ |
JPH10239559A (ja) * | 1997-02-26 | 1998-09-11 | Sumitomo Wiring Syst Ltd | 光伝送装置 |
US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
JPH11125749A (ja) * | 1997-10-21 | 1999-05-11 | Sumitomo Wiring Syst Ltd | プラスチック光ファイバと受光素子との接続部の構造,その接続部に用いられる光中継素子及びその光中継素子の製造方法 |
US6667801B1 (en) | 1999-04-15 | 2003-12-23 | The United States Of America As Represented By The Department Of Health And Human Services | Method and apparatus for safety testing optical systems for hazardous locations |
JP3958891B2 (ja) * | 1999-04-23 | 2007-08-15 | 矢崎総業株式会社 | 光コネクタ |
US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
TW527676B (en) * | 2001-01-19 | 2003-04-11 | Matsushita Electric Ind Co Ltd | Photo-semiconductor module and method for manufacturing |
US20040013432A1 (en) * | 2002-07-16 | 2004-01-22 | Tanay Karnik | Direct backside optical fiber attachment to microprocessor chips |
US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US7529435B2 (en) * | 2003-05-29 | 2009-05-05 | Applied Materials, Inc. | Serial routing of optical signals |
JP2007525012A (ja) * | 2003-06-27 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | 低ジッタのパルス型量子ドットレーザシステム |
US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
JP4478051B2 (ja) * | 2005-03-23 | 2010-06-09 | 東芝三菱電機産業システム株式会社 | 半導体装置及びその組立方法 |
US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
US7835408B2 (en) * | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
WO2007065614A2 (en) * | 2005-12-07 | 2007-06-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
DE112007003519T5 (de) * | 2007-05-24 | 2010-06-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Halbleiterbauelement |
EP2371044B1 (de) * | 2008-12-03 | 2019-08-28 | Innolume GmbH | Halbleiterlaser mit geringem relativem intensitätsrauschen individueller longitudinalmoden und den laser umfassendes optisches übertragungssystem |
JP5090383B2 (ja) * | 2009-01-21 | 2012-12-05 | アルプス電気株式会社 | 光モジュール |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1258146A (de) * | 1969-11-14 | 1971-12-22 | ||
US3920495A (en) * | 1972-04-28 | 1975-11-18 | Westinghouse Electric Corp | Method of forming reflective means in a light activated semiconductor controlled rectifier |
US4167746A (en) * | 1975-03-03 | 1979-09-11 | General Electric Company | Radiation triggered thyristor with light focussing guide |
JPS51128280A (en) * | 1975-04-30 | 1976-11-09 | Hitachi Ltd | Optical bonding semiconojctor device and its mandfactoring metho |
US4204743A (en) * | 1976-06-21 | 1980-05-27 | U.S. Philips Corporation | Connector for coupling optical fibers to an emitter or receiver of luminous energy |
FR2356167A1 (fr) * | 1976-06-21 | 1978-01-20 | Labo Electronique Physique | Connecteur de fibres optiques a un emetteur ou un recepteur d'energie lumineuse |
US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
US4186409A (en) * | 1978-08-11 | 1980-01-29 | Westinghouse Electric Corp. | Light activated silicon switch |
CA1108899A (en) * | 1978-08-17 | 1981-09-15 | Paul P. Webb | Light detector housing for fiber optic applications |
-
1980
- 1980-06-10 US US06/158,324 patent/US4368481A/en not_active Expired - Lifetime
- 1980-06-18 CS CS804293A patent/CS218597B2/cs unknown
- 1980-06-18 CA CA000354306A patent/CA1156340A/en not_active Expired
- 1980-06-19 EP EP80103426A patent/EP0021352B1/de not_active Expired
- 1980-06-19 DE DE8080103426T patent/DE3069659D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1156340A (en) | 1983-11-01 |
US4368481A (en) | 1983-01-11 |
EP0021352A1 (de) | 1981-01-07 |
DE3069659D1 (en) | 1985-01-03 |
EP0021352B1 (de) | 1984-11-21 |
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