CS218597B2 - Semiconductor facility activated by the light - Google Patents

Semiconductor facility activated by the light Download PDF

Info

Publication number
CS218597B2
CS218597B2 CS804293A CS429380A CS218597B2 CS 218597 B2 CS218597 B2 CS 218597B2 CS 804293 A CS804293 A CS 804293A CS 429380 A CS429380 A CS 429380A CS 218597 B2 CS218597 B2 CS 218597B2
Authority
CS
Czechoslovakia
Prior art keywords
light guide
light
semiconductor device
photosensitive surface
diameter
Prior art date
Application number
CS804293A
Other languages
Czech (cs)
English (en)
Inventor
Hiromichi Ohashi
Yoshihiro Shirasaka
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7714879A external-priority patent/JPS561577A/ja
Priority claimed from JP13865979A external-priority patent/JPS5662379A/ja
Priority claimed from JP14066379A external-priority patent/JPS5664479A/ja
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of CS218597B2 publication Critical patent/CS218597B2/cs

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
    • G02B6/4401—Optical cables
    • G02B6/4415—Cables for special applications
    • G02B6/4427—Pressure resistant cables, e.g. undersea cables
    • G02B6/4428—Penetrator systems in pressure-resistant devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
CS804293A 1979-06-19 1980-06-18 Semiconductor facility activated by the light CS218597B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7714879A JPS561577A (en) 1979-06-19 1979-06-19 Light-driving semiconductor device
JP13865979A JPS5662379A (en) 1979-10-29 1979-10-29 Optical operated semiconductor
JP14066379A JPS5664479A (en) 1979-10-31 1979-10-31 Light driving semiconductor device

Publications (1)

Publication Number Publication Date
CS218597B2 true CS218597B2 (en) 1983-02-25

Family

ID=27302346

Family Applications (1)

Application Number Title Priority Date Filing Date
CS804293A CS218597B2 (en) 1979-06-19 1980-06-18 Semiconductor facility activated by the light

Country Status (5)

Country Link
US (1) US4368481A (de)
EP (1) EP0021352B1 (de)
CA (1) CA1156340A (de)
CS (1) CS218597B2 (de)
DE (1) DE3069659D1 (de)

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JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device
US4450461A (en) * 1981-07-24 1984-05-22 General Electric Company Low cost high isolation voltage optocoupler with improved light transmissivity
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ
JPS58158460U (ja) * 1982-04-16 1983-10-22 三菱電機株式会社 半導体発光装置
JPS5931062A (ja) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp サイリスタ
GB2127220B (en) * 1982-08-31 1986-04-23 Tokyo Shibaura Electric Co Light-triggered semiconductor device and light guide thereto
JPS5998556A (ja) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp 光トリガサイリスタ
DE3337131A1 (de) * 1983-10-12 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Glasfaserdurchfuehrung durch eine wandoeffnung eines gehaeuses
US4675624A (en) * 1985-03-29 1987-06-23 Rca Corporation Electrical phase shifter controlled by light
US4757366A (en) * 1985-04-12 1988-07-12 Siemens Aktiengesellschaft Light-triggerable thyristor having low-loss feed of the trigger energy
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
DE3606588A1 (de) * 1986-02-28 1987-09-03 Siemens Ag Gasdichte durchfuehrung einer glasfaser
US4751513A (en) * 1986-05-02 1988-06-14 Rca Corporation Light controlled antennas
US4812002A (en) * 1986-10-24 1989-03-14 Hitachi, Ltd. Optical coupling device and method of making the same
DE3706255C2 (de) * 1987-02-26 1995-07-06 Siemens Ag Lichtzündbarer Thyristor mit zusätzlichem elektrischen Gatekontakt
US4841313A (en) * 1987-06-16 1989-06-20 Delphax Systems RF driver and control
US4899204A (en) * 1987-12-01 1990-02-06 General Electric Company High voltage switch structure with light responsive diode stack
US4825081A (en) * 1987-12-01 1989-04-25 General Electric Company Light-activated series-connected pin diode switch
JPH0372683A (ja) * 1989-08-11 1991-03-27 Toshiba Corp 反射型センサ
JPH06237016A (ja) * 1993-02-09 1994-08-23 Matsushita Electric Ind Co Ltd 光ファイバモジュールおよびその製造方法
JP3313559B2 (ja) * 1995-12-20 2002-08-12 三菱電機株式会社 光トリガサイリスタ
JP3369404B2 (ja) * 1996-06-14 2003-01-20 三菱電機株式会社 光トリガサイリスタ
JPH10239559A (ja) * 1997-02-26 1998-09-11 Sumitomo Wiring Syst Ltd 光伝送装置
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
JPH11125749A (ja) * 1997-10-21 1999-05-11 Sumitomo Wiring Syst Ltd プラスチック光ファイバと受光素子との接続部の構造，その接続部に用いられる光中継素子及びその光中継素子の製造方法
US6667801B1 (en) 1999-04-15 2003-12-23 The United States Of America As Represented By The Department Of Health And Human Services Method and apparatus for safety testing optical systems for hazardous locations
JP3958891B2 (ja) * 1999-04-23 2007-08-15 矢崎総業株式会社 光コネクタ
US6931003B2 (en) * 2000-02-09 2005-08-16 Bookline Flolmstead Llc Packet prioritization protocol for a large-scale, high speed computer network
TW527676B (en) * 2001-01-19 2003-04-11 Matsushita Electric Ind Co Ltd Photo-semiconductor module and method for manufacturing
US20040013432A1 (en) * 2002-07-16 2004-01-22 Tanay Karnik Direct backside optical fiber attachment to microprocessor chips
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US7529435B2 (en) * 2003-05-29 2009-05-05 Applied Materials, Inc. Serial routing of optical signals
JP2007525012A (ja) * 2003-06-27 2007-08-30 アプライド　マテリアルズ　インコーポレイテッド 低ジッタのパルス型量子ドットレーザシステム
US20050016446A1 (en) 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
JP4478051B2 (ja) * 2005-03-23 2010-06-09 東芝三菱電機産業システム株式会社 半導体装置及びその組立方法
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (en) * 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
US7835408B2 (en) * 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
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DE112007003519T5 (de) * 2007-05-24 2010-06-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Halbleiterbauelement
EP2371044B1 (de) * 2008-12-03 2019-08-28 Innolume GmbH Halbleiterlaser mit geringem relativem intensitätsrauschen individueller longitudinalmoden und den laser umfassendes optisches übertragungssystem
JP5090383B2 (ja) * 2009-01-21 2012-12-05 アルプス電気株式会社 光モジュール

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US3920495A (en) * 1972-04-28 1975-11-18 Westinghouse Electric Corp Method of forming reflective means in a light activated semiconductor controlled rectifier
US4167746A (en) * 1975-03-03 1979-09-11 General Electric Company Radiation triggered thyristor with light focussing guide
JPS51128280A (en) * 1975-04-30 1976-11-09 Hitachi Ltd Optical bonding semiconojctor device and its mandfactoring metho
US4204743A (en) * 1976-06-21 1980-05-27 U.S. Philips Corporation Connector for coupling optical fibers to an emitter or receiver of luminous energy
FR2356167A1 (fr) * 1976-06-21 1978-01-20 Labo Electronique Physique Connecteur de fibres optiques a un emetteur ou un recepteur d'energie lumineuse
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CA1108899A (en) * 1978-08-17 1981-09-15 Paul P. Webb Light detector housing for fiber optic applications

Also Published As

Publication number Publication date
CA1156340A (en) 1983-11-01
US4368481A (en) 1983-01-11
EP0021352A1 (de) 1981-01-07
DE3069659D1 (en) 1985-01-03
EP0021352B1 (de) 1984-11-21

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