DE3069659D1 - Light-driven semiconductor device - Google Patents
Light-driven semiconductor deviceInfo
- Publication number
- DE3069659D1 DE3069659D1 DE8080103426T DE3069659T DE3069659D1 DE 3069659 D1 DE3069659 D1 DE 3069659D1 DE 8080103426 T DE8080103426 T DE 8080103426T DE 3069659 T DE3069659 T DE 3069659T DE 3069659 D1 DE3069659 D1 DE 3069659D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- semiconductor device
- driven semiconductor
- driven
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4401—Optical cables
- G02B6/4415—Cables for special applications
- G02B6/4427—Pressure resistant cables, e.g. undersea cables
- G02B6/4428—Penetrator systems in pressure-resistant devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7714879A JPS561577A (en) | 1979-06-19 | 1979-06-19 | Light-driving semiconductor device |
JP13865979A JPS5662379A (en) | 1979-10-29 | 1979-10-29 | Optical operated semiconductor |
JP14066379A JPS5664479A (en) | 1979-10-31 | 1979-10-31 | Light driving semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3069659D1 true DE3069659D1 (en) | 1985-01-03 |
Family
ID=27302346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080103426T Expired DE3069659D1 (en) | 1979-06-19 | 1980-06-19 | Light-driven semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4368481A (de) |
EP (1) | EP0021352B1 (de) |
CA (1) | CA1156340A (de) |
CS (1) | CS218597B2 (de) |
DE (1) | DE3069659D1 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5788770A (en) * | 1980-11-21 | 1982-06-02 | Hitachi Ltd | Photo semiconductor device |
US4450461A (en) * | 1981-07-24 | 1984-05-22 | General Electric Company | Low cost high isolation voltage optocoupler with improved light transmissivity |
JPS5897864A (ja) * | 1981-12-07 | 1983-06-10 | Mitsubishi Electric Corp | 光トリガサイリスタ |
JPS58158460U (ja) * | 1982-04-16 | 1983-10-22 | 三菱電機株式会社 | 半導体発光装置 |
JPS5931062A (ja) * | 1982-08-12 | 1984-02-18 | Mitsubishi Electric Corp | サイリスタ |
GB2127220B (en) * | 1982-08-31 | 1986-04-23 | Tokyo Shibaura Electric Co | Light-triggered semiconductor device and light guide thereto |
JPS5998556A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | 光トリガサイリスタ |
DE3337131A1 (de) * | 1983-10-12 | 1985-04-25 | Siemens AG, 1000 Berlin und 8000 München | Glasfaserdurchfuehrung durch eine wandoeffnung eines gehaeuses |
US4675624A (en) * | 1985-03-29 | 1987-06-23 | Rca Corporation | Electrical phase shifter controlled by light |
US4757366A (en) * | 1985-04-12 | 1988-07-12 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low-loss feed of the trigger energy |
US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
DE3606588A1 (de) * | 1986-02-28 | 1987-09-03 | Siemens Ag | Gasdichte durchfuehrung einer glasfaser |
US4751513A (en) * | 1986-05-02 | 1988-06-14 | Rca Corporation | Light controlled antennas |
US4812002A (en) * | 1986-10-24 | 1989-03-14 | Hitachi, Ltd. | Optical coupling device and method of making the same |
DE3706255C2 (de) * | 1987-02-26 | 1995-07-06 | Siemens Ag | Lichtzündbarer Thyristor mit zusätzlichem elektrischen Gatekontakt |
US4841313A (en) * | 1987-06-16 | 1989-06-20 | Delphax Systems | RF driver and control |
US4899204A (en) * | 1987-12-01 | 1990-02-06 | General Electric Company | High voltage switch structure with light responsive diode stack |
US4825081A (en) * | 1987-12-01 | 1989-04-25 | General Electric Company | Light-activated series-connected pin diode switch |
JPH0372683A (ja) * | 1989-08-11 | 1991-03-27 | Toshiba Corp | 反射型センサ |
JPH06237016A (ja) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 光ファイバモジュールおよびその製造方法 |
JP3313559B2 (ja) * | 1995-12-20 | 2002-08-12 | 三菱電機株式会社 | 光トリガサイリスタ |
JP3369404B2 (ja) * | 1996-06-14 | 2003-01-20 | 三菱電機株式会社 | 光トリガサイリスタ |
JPH10239559A (ja) * | 1997-02-26 | 1998-09-11 | Sumitomo Wiring Syst Ltd | 光伝送装置 |
US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
JPH11125749A (ja) * | 1997-10-21 | 1999-05-11 | Sumitomo Wiring Syst Ltd | プラスチック光ファイバと受光素子との接続部の構造,その接続部に用いられる光中継素子及びその光中継素子の製造方法 |
US6667801B1 (en) | 1999-04-15 | 2003-12-23 | The United States Of America As Represented By The Department Of Health And Human Services | Method and apparatus for safety testing optical systems for hazardous locations |
JP3958891B2 (ja) * | 1999-04-23 | 2007-08-15 | 矢崎総業株式会社 | 光コネクタ |
US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
TW527676B (en) * | 2001-01-19 | 2003-04-11 | Matsushita Electric Ind Co Ltd | Photo-semiconductor module and method for manufacturing |
US20040013432A1 (en) * | 2002-07-16 | 2004-01-22 | Tanay Karnik | Direct backside optical fiber attachment to microprocessor chips |
US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US7529435B2 (en) * | 2003-05-29 | 2009-05-05 | Applied Materials, Inc. | Serial routing of optical signals |
JP2007525012A (ja) * | 2003-06-27 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | 低ジッタのパルス型量子ドットレーザシステム |
US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
JP4478051B2 (ja) * | 2005-03-23 | 2010-06-09 | 東芝三菱電機産業システム株式会社 | 半導体装置及びその組立方法 |
US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
US7835408B2 (en) * | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
WO2007065614A2 (en) * | 2005-12-07 | 2007-06-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
DE112007003519T5 (de) * | 2007-05-24 | 2010-06-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Halbleiterbauelement |
EP2371044B1 (de) * | 2008-12-03 | 2019-08-28 | Innolume GmbH | Halbleiterlaser mit geringem relativem intensitätsrauschen individueller longitudinalmoden und den laser umfassendes optisches übertragungssystem |
JP5090383B2 (ja) * | 2009-01-21 | 2012-12-05 | アルプス電気株式会社 | 光モジュール |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1258146A (de) * | 1969-11-14 | 1971-12-22 | ||
US3920495A (en) * | 1972-04-28 | 1975-11-18 | Westinghouse Electric Corp | Method of forming reflective means in a light activated semiconductor controlled rectifier |
US4167746A (en) * | 1975-03-03 | 1979-09-11 | General Electric Company | Radiation triggered thyristor with light focussing guide |
JPS51128280A (en) * | 1975-04-30 | 1976-11-09 | Hitachi Ltd | Optical bonding semiconojctor device and its mandfactoring metho |
US4204743A (en) * | 1976-06-21 | 1980-05-27 | U.S. Philips Corporation | Connector for coupling optical fibers to an emitter or receiver of luminous energy |
FR2356167A1 (fr) * | 1976-06-21 | 1978-01-20 | Labo Electronique Physique | Connecteur de fibres optiques a un emetteur ou un recepteur d'energie lumineuse |
US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
US4186409A (en) * | 1978-08-11 | 1980-01-29 | Westinghouse Electric Corp. | Light activated silicon switch |
CA1108899A (en) * | 1978-08-17 | 1981-09-15 | Paul P. Webb | Light detector housing for fiber optic applications |
-
1980
- 1980-06-10 US US06/158,324 patent/US4368481A/en not_active Expired - Lifetime
- 1980-06-18 CS CS804293A patent/CS218597B2/cs unknown
- 1980-06-18 CA CA000354306A patent/CA1156340A/en not_active Expired
- 1980-06-19 EP EP80103426A patent/EP0021352B1/de not_active Expired
- 1980-06-19 DE DE8080103426T patent/DE3069659D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1156340A (en) | 1983-11-01 |
US4368481A (en) | 1983-01-11 |
EP0021352A1 (de) | 1981-01-07 |
CS218597B2 (en) | 1983-02-25 |
EP0021352B1 (de) | 1984-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |