CS191789B1 - Device for crystallization of the monocrystals from the melt with addition of the pulverised charge - Google Patents

Device for crystallization of the monocrystals from the melt with addition of the pulverised charge

Info

Publication number
CS191789B1
CS191789B1 CS777702A CS770277A CS191789B1 CS 191789 B1 CS191789 B1 CS 191789B1 CS 777702 A CS777702 A CS 777702A CS 770277 A CS770277 A CS 770277A CS 191789 B1 CS191789 B1 CS 191789B1
Authority
CS
Czechoslovakia
Prior art keywords
monocrystals
pulverised
crystallization
melt
charge
Prior art date
Application number
CS777702A
Other languages
Czech (cs)
English (en)
Inventor
Valentin I Gorileckij
Oleg S Mjulendorf
Alexej V Radkevic
Lev G Eidelman
Original Assignee
Valentin I Gorileckij
Oleg S Mjulendorf
Alexej V Radkevic
Lev G Eidelman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valentin I Gorileckij, Oleg S Mjulendorf, Alexej V Radkevic, Lev G Eidelman filed Critical Valentin I Gorileckij
Publication of CS191789B1 publication Critical patent/CS191789B1/cs

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CS777702A 1976-11-23 1977-11-22 Device for crystallization of the monocrystals from the melt with addition of the pulverised charge CS191789B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762421865A SU661966A1 (ru) 1976-11-23 1976-11-23 Устройство дл выт гивани монокристаллов из расплава

Publications (1)

Publication Number Publication Date
CS191789B1 true CS191789B1 (en) 1979-07-31

Family

ID=20683522

Family Applications (1)

Application Number Title Priority Date Filing Date
CS777702A CS191789B1 (en) 1976-11-23 1977-11-22 Device for crystallization of the monocrystals from the melt with addition of the pulverised charge

Country Status (8)

Country Link
US (1) US4203951A (en:Method)
JP (1) JPS5388674A (en:Method)
CS (1) CS191789B1 (en:Method)
DD (1) DD134194A1 (en:Method)
DE (1) DE2752308C2 (en:Method)
FR (1) FR2371228A1 (en:Method)
GB (1) GB1589491A (en:Method)
SU (1) SU661966A1 (en:Method)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
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US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
FR2479276A1 (fr) * 1980-03-31 1981-10-02 Radiotechnique Compelec Procede de croissance monocristalline d'un lingot d'un materiau semiconducteur, notamment de silicium, et appareillage de mise en oeuvre dudit procede
JPS57123892A (en) * 1981-01-17 1982-08-02 Toshiba Corp Preparation and apparatus of single crystal
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
DE3316546C1 (de) * 1983-05-06 1984-04-26 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel fuer das Erschmelzen und die Kristallisation nichtmetallischer anorganischer Verbindungen
JPS60251191A (ja) * 1984-05-25 1985-12-11 Res Dev Corp Of Japan 高解離圧化合物単結晶成長方法
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6144792A (ja) * 1984-08-09 1986-03-04 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
JPS623096A (ja) * 1985-06-27 1987-01-09 Res Dev Corp Of Japan 高解離圧化合物半導体単結晶成長方法
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
US5180562A (en) * 1987-10-03 1993-01-19 Leybold Aktiengesellschaft Apparatus for pulling monocrystals
EP0315156B1 (en) * 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Apparatus for growing crystals
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
US5178719A (en) * 1991-08-20 1993-01-12 Horiba Instruments, Inc. Continuous refill crystal growth method
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
US5474022A (en) * 1994-04-21 1995-12-12 Mitsubishi Materials Corporation Double crucible for growing a silicon single crystal
JP3892496B2 (ja) * 1996-04-22 2007-03-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法
US5792253A (en) * 1996-07-22 1998-08-11 Siemens Medical Systems, Inc. Forging cylindrical ingots of alkali halides
US6984263B2 (en) * 2001-11-01 2006-01-10 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
RU2261296C1 (ru) * 2004-08-05 2005-09-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава
US20070240634A1 (en) * 2006-04-18 2007-10-18 Radkevich Olexy V Crystal growing apparatus having a crucible for enhancing the transfer of thermal energy
US7862656B2 (en) * 2007-07-03 2011-01-04 Siemens Medical Solutions Usa, Inc. Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
US8114218B2 (en) * 2008-09-02 2012-02-14 Siemens Medical Solutions Usa, Inc. Crucible for a crystal pulling apparatus
CN101736401B (zh) * 2008-11-10 2013-07-24 Axt公司 锗晶体生长的方法和装置
US8652257B2 (en) * 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material
US9664448B2 (en) * 2012-07-30 2017-05-30 Solar World Industries America Inc. Melting apparatus
CN120273017B (zh) * 2025-06-11 2025-08-26 苏州晨晖智能设备有限公司 一种直拉法连续加料生长硅单晶的第一坩埚及其熔料和拉晶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren

Also Published As

Publication number Publication date
JPS5388674A (en) 1978-08-04
JPS5611675B2 (en:Method) 1981-03-16
US4203951A (en) 1980-05-20
FR2371228A1 (fr) 1978-06-16
FR2371228B1 (en:Method) 1981-01-16
DE2752308C2 (de) 1985-07-11
DD134194A1 (de) 1979-02-14
SU661966A1 (ru) 1980-04-05
GB1589491A (en) 1981-05-13
DE2752308A1 (de) 1978-05-24

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