CS169753B2 - - Google Patents
Info
- Publication number
- CS169753B2 CS169753B2 CS227772A CS227772A CS169753B2 CS 169753 B2 CS169753 B2 CS 169753B2 CS 227772 A CS227772 A CS 227772A CS 227772 A CS227772 A CS 227772A CS 169753 B2 CS169753 B2 CS 169753B2
- Authority
- CS
- Czechoslovakia
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712116746 DE2116746C3 (de) | 1971-04-06 | 1971-04-06 | Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS169753B2 true CS169753B2 (en:Method) | 1976-07-29 |
Family
ID=5804021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS227772A CS169753B2 (en:Method) | 1971-04-06 | 1972-04-05 |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5312358B1 (en:Method) |
| AT (1) | AT324429B (en:Method) |
| BE (1) | BE778746A (en:Method) |
| CA (1) | CA969839A (en:Method) |
| CS (1) | CS169753B2 (en:Method) |
| DD (1) | DD100404A5 (en:Method) |
| DE (1) | DE2116746C3 (en:Method) |
| DK (1) | DK142625C (en:Method) |
| FR (1) | FR2132404B1 (en:Method) |
| GB (1) | GB1378302A (en:Method) |
| IT (1) | IT950953B (en:Method) |
| NL (1) | NL7201633A (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2609564A1 (de) * | 1976-03-08 | 1977-09-15 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium aus der gasphase |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| CN101224888B (zh) * | 2007-10-23 | 2010-05-19 | 四川永祥多晶硅有限公司 | 多晶硅氢还原炉的硅芯棒加热启动方法 |
| DE102009010086B4 (de) * | 2009-01-29 | 2013-04-11 | Centrotherm Sitec Gmbh | Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor |
| US20120322175A1 (en) * | 2011-06-14 | 2012-12-20 | Memc Electronic Materials Spa | Methods and Systems For Controlling SiIicon Rod Temperature |
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1971
- 1971-04-06 DE DE19712116746 patent/DE2116746C3/de not_active Expired
-
1972
- 1972-01-31 BE BE778746A patent/BE778746A/xx unknown
- 1972-02-08 NL NL7201633A patent/NL7201633A/xx unknown
- 1972-03-15 AT AT219572A patent/AT324429B/de not_active IP Right Cessation
- 1972-03-16 GB GB1222872A patent/GB1378302A/en not_active Expired
- 1972-03-29 CA CA138,416A patent/CA969839A/en not_active Expired
- 1972-03-31 IT IT2266572A patent/IT950953B/it active
- 1972-04-03 DD DD16200572A patent/DD100404A5/xx unknown
- 1972-04-04 FR FR7211753A patent/FR2132404B1/fr not_active Expired
- 1972-04-05 DK DK163272A patent/DK142625C/da not_active IP Right Cessation
- 1972-04-05 CS CS227772A patent/CS169753B2/cs unknown
- 1972-04-06 JP JP3395072A patent/JPS5312358B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BE778746A (fr) | 1972-05-16 |
| CA969839A (en) | 1975-06-24 |
| JPS5312358B1 (en:Method) | 1978-04-28 |
| DK142625B (da) | 1980-12-01 |
| DD100404A5 (en:Method) | 1973-09-20 |
| IT950953B (it) | 1973-06-20 |
| NL7201633A (en:Method) | 1972-10-10 |
| PL73356B1 (en:Method) | 1974-08-30 |
| DE2116746B2 (de) | 1978-04-13 |
| GB1378302A (en) | 1974-12-27 |
| FR2132404B1 (en:Method) | 1974-08-02 |
| DE2116746C3 (de) | 1978-12-07 |
| FR2132404A1 (en:Method) | 1972-11-17 |
| DK142625C (da) | 1981-08-03 |
| DE2116746A1 (de) | 1972-10-19 |
| AT324429B (de) | 1975-08-25 |