PL73356B1 - - Google Patents
Info
- Publication number
- PL73356B1 PL73356B1 PL15453772A PL15453772A PL73356B1 PL 73356 B1 PL73356 B1 PL 73356B1 PL 15453772 A PL15453772 A PL 15453772A PL 15453772 A PL15453772 A PL 15453772A PL 73356 B1 PL73356 B1 PL 73356B1
- Authority
- PL
- Poland
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712116746 DE2116746C3 (de) | 1971-04-06 | 1971-04-06 | Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL73356B1 true PL73356B1 (en:Method) | 1974-08-30 |
| PL73356B2 PL73356B2 (en:Method) | 1974-08-31 |
Family
ID=
Also Published As
| Publication number | Publication date |
|---|---|
| BE778746A (fr) | 1972-05-16 |
| CA969839A (en) | 1975-06-24 |
| JPS5312358B1 (en:Method) | 1978-04-28 |
| DK142625B (da) | 1980-12-01 |
| DD100404A5 (en:Method) | 1973-09-20 |
| IT950953B (it) | 1973-06-20 |
| NL7201633A (en:Method) | 1972-10-10 |
| DE2116746B2 (de) | 1978-04-13 |
| CS169753B2 (en:Method) | 1976-07-29 |
| GB1378302A (en) | 1974-12-27 |
| FR2132404B1 (en:Method) | 1974-08-02 |
| DE2116746C3 (de) | 1978-12-07 |
| FR2132404A1 (en:Method) | 1972-11-17 |
| DK142625C (da) | 1981-08-03 |
| DE2116746A1 (de) | 1972-10-19 |
| AT324429B (de) | 1975-08-25 |