CN87211459U

CN87211459U - High voltage electronic two-way switch with high input impedance

Info

Publication number: CN87211459U
Application number: CN 87211459
Authority: CN
Inventors: 徐剑石
Original assignee: Individual
Current assignee: Individual
Priority date: 1987-08-25
Filing date: 1987-08-25
Publication date: 1988-05-25

Abstract

The electronic switch is an important component in the field of electronic technology; the utility model relates to a high voltage electronic two-way switch with high input resistance which is formed by that two N-channel field effect switches are connected in series by a drain electrode (or a source electrode), and two resistances between gate sources (or grid leaks) of N-channel field effect pipes are respectively replaced by two high-voltage diodes; the resistance of the electronic two-way switch can be up to 10+[3] megohms, and the withstanding voltage of both ends of the electronic two-way switch can be up to 40 volts; the defects that the speed of a relay is slow, and the switch of a CMOS device is easy to be damaged are overcome; the utility model can be significantly used in a quantity of electronic complete machines.

Description

High voltage electronic two-way switch with high input impedance

Electronic switch is the vitals of electronic technology field.

At present, adopt the electronic switch of CMOS technology manufacturing under low pressure to use, stable state and this type of electronic switch of high voltage transient occurring very easily damages, the existing electronic switch that adopts the technotron assembling, input resistance is too low, can not two-wayly bear high voltage operation, therefore, influence and hindered the development and the generation of many advanced complete electronic sets.

The purpose of this utility model provides a kind of high input resistance high-voltage bidirectional electronic switch, and this switch can overcome the above-mentioned defective of existing electronic switch.

Original N channel field-effect switch is bigger resistance of resistance of adjunction between grid source (or grid leak), the characteristics of the utility model structure are a high-voltage diode to be added to be connected on replace original resistance between the N channel field-effect switch gate source (or grid leak), and such two electronic switches drain electrodes (or source electrode) are composed in series a bidirectional electronic switch, with Fig. 1 is example, its operation principle is: when control end voltage is higher than switch A, during the B terminal voltage, because the effect of D3 and D4 diode, BG1 and BG2 conducting, at this moment switch A, the B two ends are in conducting state, and when control end C terminal voltage was lower than A.B end certain voltage, BG1.BG2 turn-offed simultaneously; Or BG1 turn-offs and BG2 does not turn-off, or BG2 turn-offs and BG1 does not turn-off, but, because BG1 and BG2 connect, the A.B two ends are in off state, this electronic switch, the A.B both end voltage can be up to 40 volts, switch still is in off state, because the reverse leakage current of diode D1, D2.D3 and D4 is minimum, the input resistance of switch can be up to 10 ³Megaohm, this electronic switch will obtain important application in some high high-level complete electronic sets.

Fig. 1 and Fig. 2 are respectively two specific embodiments of this switch; D1.D2.D3 and D4 are high-voltage switch gear (or high pressure) diodes among Fig. 1, and R1 and R2 are protective resistance, and BG1 and BG2 are the N slot field-effect transistor; Fig. 1 and Fig. 2 are basic identical, have just omitted a resistance among Fig. 2.

Claims

1, a kind of bidirectional electronic switch is characterized in that:

A. it is formed by drain electrode (or source electrode) serial connection by two N channel field-effect switches.

B. the resistance between two N channel field-effect pipe grid sources (or grid leak) is replaced by two high-voltage diodes respectively.