CN208401749U - Double gate MOS device and brush direct current motor positive and reverse rotation control circuit - Google Patents
Double gate MOS device and brush direct current motor positive and reverse rotation control circuit Download PDFInfo
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- CN208401749U CN208401749U CN201821023607.1U CN201821023607U CN208401749U CN 208401749 U CN208401749 U CN 208401749U CN 201821023607 U CN201821023607 U CN 201821023607U CN 208401749 U CN208401749 U CN 208401749U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 230000005611 electricity Effects 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 101000721712 Homo sapiens NTF2-related export protein 1 Proteins 0.000 description 1
- 101000844521 Homo sapiens Transient receptor potential cation channel subfamily M member 5 Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 102100025055 NTF2-related export protein 1 Human genes 0.000 description 1
- 102100031215 Transient receptor potential cation channel subfamily M member 5 Human genes 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
The utility model relates to technical field of electronic devices, specially a kind of double gate MOS device and brush direct current motor positive and reverse rotation control circuit, the double gate MOS device uses TO263-5 encapsulating structure, device exterior has the first pin, second pin, third pin, 4th pin and the 5th pin, enclosed inside has NMOS tube and PMOS tube, the grid of NMOS tube is as second pin connecting pin, source electrode is used as the first pin connecting pin after connecting with the drain electrode of PMOS tube, drain electrode is used as third pin connecting pin, the grid of PMOS tube and the 4th pin connecting pin, source electrode is as the 5th pin connecting pin；When the MOS device is applied to brush direct current motor positive and reverse rotation control circuit, 2 devices, that is, alternative original 4 metal-oxide-semiconductors simplify circuit structure, reduce cabling complexity, so that entire pcb board volume reduces, line loss is reduced, and distribution capacity and inductive interferences are optimised.
Description
Technical field
The utility model relates to technical field of electronic devices, specially a kind of double gate MOS device and DC brush electricity
Machine positive and reverse rotation control circuit.
Background technique
Existing brush direct current motor positive and reverse rotation control circuit, as shown in Figure 1, need 4 metal-oxide-semiconductors (Q3 in Fig. 1~
Q6) alternate conduction, this product for allowing for being eventually fabricated have the following characteristics that
1.MOS pipe all uses discrete device, causes pcb board volume big, and pcb board cabling is complicated and difficult；
2. the distribution capacity of product, inductive interferences are obvious, the Electro Magnetic Compatibility of product is influenced；
3. product job insecurity, failure rate are relatively high.
Utility model content
For the problems of the prior art, the utility model provides a kind of double gate MOS device and brush direct current motor
Positive and reverse rotation control circuit.
To realize the above technical purpose, the technical solution of the utility model is:
A kind of double gate MOS device, device use TO263-5 encapsulating structure, and device exterior has the first pin, second
Pin, third pin, the 4th pin and the 5th pin, enclosed inside have NMOS tube and PMOS pipe, and the grid of the NMOS tube is made
For second pin connecting pin, source electrode is used as the first pin connecting pin after connecting with the drain electrode of PMOS tube, drain electrode is used as third pin
Connecting pin, the grid of the PMOS tube and the 4th pin connecting pin, source electrode is as the 5th pin connecting pin.
A kind of brush direct current motor positive and reverse rotation control circuit based on above-mentioned double gate MOS device, including resistance R1,
Resistance R2, resistance R3, resistance R4, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, triode Q3, triode Q4, the metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 are equal
Using above-mentioned double gate MOS device, the second pin of the metal-oxide-semiconductor Q1 respectively with its own the 4th pin, triode
The collector of Q3 is connected with one end of resistance R1, third pin respectively with power supply VCC end, the other end of resistance R1, resistance R2
The third pin connection of one end, metal-oxide-semiconductor Q2, the 5th pin is connect with the 5th pin of the end power supply GND, metal-oxide-semiconductor Q2 respectively, described
The second pin of MOS pipe Q2 is connect with the emitter of the 4th pin of its own, the other end of resistance R2, triode Q4 respectively,
The emitter of the triode Q3 is connect with the collector of triode Q4, the end power supply GND respectively, the grid of the triode Q3 with
One end of resistance R3 connects, and the other end of the resistance R3 is used to input the driving signal of triode Q3, the triode Q4's
Grid is connect with one end of resistance R4, and the other end of the resistance R4 is used to input the driving signal of triode Q4, the MOS
The first pin of pipe Q1 and the first pin of metal-oxide-semiconductor Q2 are connect with two input terminals of direct current generator respectively.
From the above, it can be seen that the utility model has following advantages: the utility model is optimized by packaging technology,
2 metal-oxide-semiconductors are integrated in inside the encapsulation of same TO-263-5, double gate MOS device are formed, by double gate MOS device
When part is applied to brush direct current motor positive and reverse rotation control circuit, with 2 double gate MOS devices, that is, alternative original 4 MOS
Pipe, enormously simplifies circuit structure, reduces cabling complexity, so that the volume of entire pcb board reduces, line loss drops significantly
It is low, and optimize the distribution capacity and inductive interferences of product.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing brush direct current motor positive and reverse rotation control circuit；
Fig. 2 is the structural schematic diagram of the utility model double gate MOS device；
Fig. 3 is the electrical block diagram of the utility model double gate MOS device；
Fig. 4 is knot when the utility model double gate MOS device is applied to brush direct current motor positive and reverse rotation control circuit
Structure schematic diagram.
Specific embodiment
In conjunction with Fig. 2 to 4, a specific embodiment of the utility model is described in detail, but not to the right of the utility model
It is required that doing any restriction.
As shown in Figures 2 and 3, a kind of double gate MOS device, device use TO263-5 encapsulating structure, device exterior tool
There are the first pin 1, second pin 2, third pin 3, the 4th pin 4 and the 5th pin 5, enclosed inside has NMOS tube N1 and PMOS
For the grid of pipe P1, NMOS tube N1 as second pin connecting pin, source electrode is used as the first pin after connecting with the drain electrode of PMOS tube P1
Connecting pin, drain electrode are used as third pin connecting pin, and the grid of PMOS tube P1 and the 4th pin connecting pin, source electrode draw as the 5th
Foot connecting pin.
After above-mentioned double gate MOS device is applied to a kind of brush direct current motor positive and reverse rotation control circuit shown in FIG. 1,
The structure of the circuit simplifies are as follows:
As shown in figure 4, brush direct current motor positive and reverse rotation control circuit, including resistance R1, resistance R2, resistance R3, resistance
R4, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, triode Q3, triode Q4, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 are all made of above-mentioned double gate MOS device
Part, the second pin of metal-oxide-semiconductor Q1 connect with one end of the 4th pin of its own, the collector of triode Q3 and resistance R1 respectively
It connecing, third pin is connect with the third pin of the end power supply VCC, the other end of resistance R1, one end of resistance R2, metal-oxide-semiconductor Q2 respectively,
5th pin is connect with the 5th pin of the end power supply GND, metal-oxide-semiconductor Q2 respectively, the second pin of metal-oxide-semiconductor Q2 respectively with its own
The emitter connection of 4th pin, the other end of resistance R2, triode Q4, the emitter of triode Q3 is respectively with triode Q4's
Collector, the connection of the end power supply GND, the grid of triode Q3 are connect with one end of resistance R3, and the other end of resistance R3 is for inputting
The grid of driving signal the DC MTR1, triode Q4 of triode Q3 are connect with one end of resistance R4, and the other end of resistance R4 is used for
Input triode Q4 driving signal DC MTR2, metal-oxide-semiconductor Q1 the first pin and metal-oxide-semiconductor Q2 the first pin respectively with direct current
Two input terminals of motor M connect.
It can be seen that from foregoing circuit structure and double gate MOS device be applied to brush direct current motor shown in FIG. 1 just
When reverse turn control circuit, with 2 double gate MOS devices, that is, alternative original 4 metal-oxide-semiconductors, and original diode D1
~D4 is also simplified, and compared with original circuit structure, circuit structure is greatly simplified, and reduces cabling complexity, so that
The volume of entire pcb board reduces, and line loss substantially reduces, and optimizes the distribution capacity and inductive interferences of product.
Double gate MOS device described in the utility model, which can be applied equally to other, has switch, afterflow demand to answer
With in occasion, original more discrete devices are replaced with this device, PCB plate bulk and the cabling that can substantially reduce product are multiple
Miscellaneous degree, such as the occasion of lithium battery protection circuit.
In conclusion the utility model has the advantage that the utility model is optimized by packaging technology, by 2 MOS
Pipe is integrated in inside the encapsulation of same TO-263-5, forms double gate MOS device, double gate MOS device is applied to
When brush direct current motor positive and reverse rotation control circuit, with 2 double gate MOS devices, that is, alternative original 4 metal-oxide-semiconductors, significantly
Circuit structure is simplified, cabling complexity is reduced, so that the volume of entire pcb board reduces, line loss is substantially reduced, and
Optimize the distribution capacity and inductive interferences of product.
It is understood that being merely to illustrate the utility model above with respect to the specific descriptions of the utility model and not being
It is limited to technical solution described in the utility model embodiment.Those skilled in the art should understand that still can be with
It modifies to the utility model or equivalent replacement, to reach identical technical effect；Needs are used as long as meeting, all in this reality
Within novel protection scope.
Claims (2)
1. a kind of double gate MOS device, it is characterised in that: device uses TO263-5 encapsulating structure, and device exterior has first
Pin, second pin, third pin, the 4th pin and the 5th pin, enclosed inside have NMOS tube and PMOS tube, the NMOS tube
Grid as second pin connecting pin, source electrode connect with the drain electrode of PMOS tube after as the first pin connecting pin, drain conduct
Third pin connecting pin, the grid of the PMOS tube and the 4th pin connecting pin, source electrode is as the 5th pin connecting pin.
2. a kind of brush direct current motor positive and reverse rotation control circuit, it is characterised in that: including resistance R1, resistance R2, resistance R3, resistance
R4, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, triode Q3, triode Q4, the metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 are all made of as described in claim 1
Double gate MOS device, the second pin of the metal-oxide-semiconductor Q1 current collection with the 4th pin of its own, triode Q3 respectively
Pole is connected with one end of resistance R1, third pin respectively with the end power supply VCC, the other end of resistance R1, one end of resistance R2, MOS
The third pin of pipe Q2 connects, and the 5th pin is connect with the 5th pin of the end power supply GND, metal-oxide-semiconductor Q2 respectively, the metal-oxide-semiconductor Q2
Second pin connect respectively with the emitter of the 4th pin of its own, the other end of resistance R2, triode Q4, three pole
The emitter of pipe Q3 is connect with the collector of triode Q4, the end power supply GND respectively, and the grid of the triode Q3 is with resistance R3's
One end connection, the other end of the resistance R3 are used to input the driving signal of triode Q3, the grid and electricity of the triode Q4
Hindering one end connection of R4, the other end of the resistance R4 is used to input the driving signal of triode Q4, and the first of the metal-oxide-semiconductor Q1
The first pin of pin and metal-oxide-semiconductor Q2 are connect with two input terminals of direct current generator respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821023607.1U CN208401749U (en) | 2018-06-29 | 2018-06-29 | Double gate MOS device and brush direct current motor positive and reverse rotation control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821023607.1U CN208401749U (en) | 2018-06-29 | 2018-06-29 | Double gate MOS device and brush direct current motor positive and reverse rotation control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208401749U true CN208401749U (en) | 2019-01-18 |
Family
ID=65130314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821023607.1U Active CN208401749U (en) | 2018-06-29 | 2018-06-29 | Double gate MOS device and brush direct current motor positive and reverse rotation control circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208401749U (en) |
-
2018
- 2018-06-29 CN CN201821023607.1U patent/CN208401749U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 214421 Xiangyang Village, Huashi Town, Jiangyin, Wuxi, Jiangsu, 1-8 Patentee after: JIANGSU SUNWARD ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 103, building 214000, block D, Information Technology Industrial Park, 21 Changjiang Road, new Wu District, Jiangsu, Wuxi Patentee before: WUXI GONGYING INTELLIGENT TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240123 Address after: 215612 No.1 Huatai Road, Fenghuang Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: Kaimei Semiconductor (Suzhou) Co.,Ltd. Country or region after: China Address before: No. 1-8 Xiangyang Road, Xiangyang Village, Huashi Town, Jiangyin City, Wuxi City, Jiangsu Province, 214421 Patentee before: JIANGSU SUNWARD ELECTRONIC TECHNOLOGY CO.,LTD. Country or region before: China |
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| TR01 | Transfer of patent right |