CN106342399B - A kind of two-phase power MOS pipe H bridge high-speed driving circuit - Google Patents
A kind of two-phase power MOS pipe H bridge high-speed driving circuitInfo
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- CN106342399B CN106342399B CN201218000975.6A CN201218000975A CN106342399B CN 106342399 B CN106342399 B CN 106342399B CN 201218000975 A CN201218000975 A CN 201218000975A CN 106342399 B CN106342399 B CN 106342399B
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Abstract
The present invention relates to a kind of two-phase power MOS pipe H bridge high-speed driving circuit, the base stage of triode VT1 is connected with input signal PWM1, and the base stage of triode VT2 is connected with input signal PWM2; Triode VT1 colelctor electrode connects the second resistance R 2, R2 is connected with positive supply+VCC by the first resistance R 1, the grid of technotron Q1 is connected with R1, R2 common port, technotron Q1 drain electrode is connected with positive supply+VCC, technotron Q1 source electrode is connected with the positive pole of Zener diode Z1, technotron Q1 source electrode is by resistance R 3 ground connection simultaneously, and Zener diode Z1 positive pole is connected with resistance R G1, the gate drive signal of the other end output mos pipe VJ1 of RG1. This circuit has the following advantages:
Description
Technical field
The present invention relates to a kind of two-phase power MOS pipe H bridge high-speed driving circuit.
Background technology
The two-phase H bridge circuit being made up of 4 power MOS pipes, can be applicable to servomotor control, switch electricityThe aspects such as source design, high frequency transformer driving, widely should have in the field such as Aero-Space, industrial automationWith.
At present, the two-phase H bridge drive circuit that adopts discrete device to build comprises resistance, triode, voltage stabilizing twoUtmost point pipes etc., the base stage of triode VT1 is connected with input signal PWM1, the base stage of triode VT2 and inputSignal PWM2 is connected, and triode VT1 colelctor electrode connects the second resistance R 2, and positive supply+VCC is by firstResistance R 1 is connected with the second resistance R 2, and R1 two ends are also connected with Zener diode Z1, and Zener diode Z1 justThe gate drive signal of utmost point output mos pipe VJ1; Triode VT2 colelctor electrode connects the 3rd resistance R 3, negativePower supply VEE is connected with the 3rd resistance R 3 by the 4th resistance R 4, and R4 two ends are also connected with Zener diode Z2,The gate drive signal of Zener diode Z2 negative pole output mos pipe VJ2; Triode VT3 colelctor electrode connectsThe 6th resistance R 6, positive supply+VCC is connected with the 6th resistance R 6 by the 5th resistance R 5, and R5 two ends also connectThere is Zener diode Z3, the gate drive signal of the anodal output mos pipe of Zener diode Z3 VJ3; Three utmost pointsPipe VT4 colelctor electrode connects the 7th resistance R 7, and negative supply VEE is by the 8th resistance R 8 and the 7th resistance R 7Be connected, R8 two ends are also connected with Zener diode Z4, Zener diode Z4 negative pole output mos pipe VJ4'sGate drive signal. VT1, VT3 are NPN type triode, and VT2, VT4 are positive-negative-positive triode, VT3,The base earth of VT4, the emitter stage of VT1 is connected with the emitter stage of VT4, the emitter stage of VT2 and VT3'sEmitter stage is connected. As shown in dotted line frame in Figure of description 1.
This two-phase power MOS pipe H bridge drive circuit itself does not have dead band, at two-way input signal PWM1And the power MOS pipe that H bridge homonymy upper and lower bridge arm can occur in the situation that between PWM2, dead band is zero is straight-throughBurn phenomenon. In addition, the two-phase power MOS pipe H bridge drive circuit of accompanying drawing 1 can be at power MOS pipeGrid source drive seals in certain resistance in loop, makes the switching speed of power MOS pipe slack-off, in order to improveThe switching speed of power MOS pipe, the resistance of selection R1～R8 (general hundreds of ohm) too greatly, this is againCause the power consumption of R1～R8 larger, thereby cause whole drive circuit consumed power larger.
Summary of the invention
The present invention proposes a kind of simple and reliable two-phase power MOS pipe H bridge drive circuit, and this drive circuit canThe power MOS pipe of two-phase H bridge is turned on and off at a high speed; Drive circuit of the present invention makes the MOS of H bridgePipe has been opened certain delay, and do not turn-off and postpone, thus the tool of two-phase power MOS pipe H bridge drive circuit ownThere is dead zone protection; The power consumption of this drive circuit own is little.
The technical scheme that the present invention takes is:
For the deficiency of existing two-phase power MOS pipe H bridge drive circuit, the present invention proposes a kind of two-phase powerMetal-oxide-semiconductor H bridge high-speed driving circuit.
The technical scheme that the present invention takes is:
A kind of high-power MOS tube H bridge high-speed driving circuit, the base stage of triode VT1 and input signalPWM1 is connected, and the base stage of triode VT2 is connected with input signal PWM2;
Triode VT1 colelctor electrode connects the second resistance R 2, and R2 is by the first resistance R 1 and positive supply+VCCConnect, the grid of technotron Q1 is connected with R1, R2 common port, technotron Q1 drain electrodeBe connected with positive supply+VCC, technotron Q1 source electrode is connected with the positive pole of Zener diode Z1, withTime technotron Q1 source electrode by resistance R 3 ground connection, the anodal and resistance R G1 phase of Zener diode Z1Connect the gate drive signal of the other end output mos pipe VJ1 of RG1;
Triode VT2 colelctor electrode connects the 3rd resistance R 3, and R3 is by the 4th resistance R 4 and negative supply VEEConnect, the grid of technotron Q2 is connected with R3, R4 common port, technotron Q2 drain electrodeVEE is connected with negative supply, and technotron Q2 source electrode is connected with the negative pole of Zener diode Z2, simultaneouslyTechnotron Q2 source electrode is by resistance R 10 ground connection, and Zener diode Z2 negative pole is connected with resistance R G2,The gate drive signal of the other end output mos pipe VJ2 of RG2;
Triode VT3 colelctor electrode connects the 6th resistance R 6, and R6 is by the 5th resistance R 5 and positive supply+VCCConnect, the grid of technotron Q3 is connected with R5, R6 common port, technotron Q3 drain electrodeBe connected with positive supply+VCC, technotron Q3 source electrode is connected with the positive pole of Zener diode Z3,Technotron Q3 source electrode passes through resistance R 11 ground connection simultaneously, Zener diode Z3 positive pole and resistance R G3Be connected, the gate drive signal of the other end output mos pipe VJ3 of RG3;
Triode VT4 colelctor electrode connects the 7th resistance R 7, and R7 is by the 8th resistance R 8 and negative supply VEEBe connected, the grid of technotron Q4 is connected with R7, R8 common port, technotron Q4 drain electrodeVEE is connected with negative supply, and technotron Q4 source electrode is connected with the negative pole of Zener diode Z4, simultaneouslyTechnotron Q4 source electrode is by resistance R 12 ground connection, and Zener diode Z4 negative pole is connected with resistance R G4,The gate drive signal of the other end output mos pipe VJ4 of RG4.
Further, above-mentioned Q1, Q3 are N channel junction field-effect pipe, and Q2, Q4 are P channel junction fieldEffect pipe;
Further, above-mentioned VT1, VT3 are NPN type triode, and VT2, VT4 are positive-negative-positive triode;
Further, the base earth of above-mentioned VT3, VT4, the emitter stage of VT1 and the emitter stage of VT4Be connected, the emitter stage of VT2 is connected with the emitter stage of VT3.
Technotron belongs to depletion field effect transistor, under off-position, opens, and the present invention is profit justBy this specific character of technotron, design two-phase power MOS pipe H bridge drive circuit, substantially formerReason is that input signal PWM1, PWM2 drive triode VT1～VT4, and triode VT1～VT4 drives knotType FET Q1～Q4, technotron Q1～Q4 drives two-phase merit together with Zener diode Z1～Z4Four power MOS pipes of rate metal-oxide-semiconductor H bridge.
In the present invention, resistance R 1～R12 can choose larger resistance, thereby the power consumption of drive circuit is fallen greatlyLow.
Concerning technotron, if grid voltage between source electrodes and grid leak voltage across poles meet junction type field effect simultaneouslyPinch-off voltage that should pipe, technotron just can turn-off; Otherwise, if grid voltage between source electrodes and the grid leak utmost pointBetween voltage be zero simultaneously, technotron is open-minded. Technotron Q1～Q4 is had to following relation:
UGS1＝UG1-US1 (1)
UGD1＝UG1-VCC (2)
UGS2＝UG2-US2 (3)
UGD2＝UG2+VEE (4)
UGS3＝UG3-US3 (5)
UGD3＝UG3-VCC (6)
UGS4＝UG4-US4 (7)
UGD4＝UG4+VEE (8)
The turn-off criterion of technotron Q1～Q4 is:
UGS1，UGD1≤VP1(VP1For the pinch-off voltage of Q1) (9)
UGS2，UGD2≥VP2(VP2For the pinch-off voltage of Q2) (10)
UGS3，UGD3≤VP3(VP3For the pinch-off voltage of Q3) (11)
UGS4，UGD4≥VP4(VP4For the pinch-off voltage of Q1) (12)
In the time that PWM1 signal is high level, VT1, VT4 conducting, the pressure drop of Q1 pin is:
UG1≈+VCC-(VCC+VEE)*R1/(R1+R2+R7+R8)， (13)
US1＝+VCC-Vz1， (14)
The pressure drop of Q4 pin is:
UG4≈-VEE+(VCC+VEE)*R8/(R1+R2+R7+R8)， (15)
US4＝-VEE+Vz4， (16)
Suitably select resistance R 1, R2, R7, R8, Zener diode Z1, Z4 and technotron Q1, Q4,Make UGS1And UGD1The turn-off criterion that meets technotron Q1, makes UGS4And UGD4Meet junction type fieldThe turn-off criterion of effect pipe Q4, technotron Q1, Q4 just can turn-off, like this voltage-stabiliser tube Z1,Z4 just sets up voltage between the grid source electrode of power MOS pipe VJ1 and VJ4, makes VJ1 and VJ4 open-minded;
In the time that PWM1 is low level, VT1, VT4 turn-off, and Q1, Q4 turn-off criterion are false, electric current Main CurrentThrough Q1, R9 and Q4, R12, the pin voltage of Q1 and Q4 is:
UG1≈US1≈+VCC， (17)
UG4≈US4≈-VEE， (18)
Q1, Q4 are open-minded, and the grid voltage between source electrodes of power MOS pipe VJ1 and VJ4 is almost 0, VJ1 and VJ4Turn-off.
In like manner, in the time that PWM2 signal is low level, VT2, VT3 conducting,
The pressure drop of technotron Q2 pin is:
UG2≈-VEE+(VCC+VEE)*R4/(R3+R4+R5+R6)， (19)
US2＝-VEE+Vz2， (20)
The pressure drop of technotron Q3 pin is:
UG1≈+VCC-(VCC+VEE)*R5/(R3+R4+R5+R6)， (21)
US3＝+VCC-Vz3， (22)
Suitably select resistance R 3, R4, R5, R6, Zener diode Z2, Z3 and technotron Q2, Q3,Make UGS2And UGD2The turn-off criterion that meets technotron Q2, makes UGS3And UGD3Meet junction type fieldThe turn-off criterion of effect pipe Q3, technotron Q2, Q3 just can turn-off, like this voltage-stabiliser tube Z2,Z3 just sets up voltage between the grid source electrode of power MOS pipe VJ2 and VJ3, makes VJ2 and VJ3 open-minded;
In the time that PWM2 is high level, VT2, VT3 turn-off, and Q2, Q3 turn-off criterion are false, electric current masterFlow through Q2, R10 and Q3, R11, the pin voltage of Q2 and Q3 is:
UG2≈US2≈-VEE， (23)
UG3≈US3≈+VCC， (24)
Q2, Q3 are open-minded, and the grid voltage between source electrodes of power MOS pipe VJ2 and VJ3 is almost 0, VJ2 and VJ3Turn-off.
In addition, larger if the resistance of resistance R 9～R12 is chosen, will make the voltage stabilizing electricity of Zener diode Z1Roll slow a period of time and set up, thereby make the signal of opening of power MOS pipe have a delay, and metal-oxide-semiconductorCut-off signals does not postpone, and protects so two-phase power MOS pipe H bridge drive circuit itself has certain dead bandProtect, avoid power MOS pipe to lead directly to and burn.
Beneficial effect: this circuit has the following advantages:
1) there is dead zone protection: because this drive circuit has delayed-action, meeting to input PWM cut-off signalsCause two-phase power MOS pipe H bridge drive circuit itself to have a dead band, increased H bridge fourThe protection of power MOS pipe;
2) switching speed is fast: the needs that meet current high-frequency PWM signal modulation;
3) drive circuit consumed power of the present invention is low.
Brief description of the drawings
In Fig. 1 dotted line, it is existing two-phase power MOS pipe H bridge drive circuit connection diagram;
It in Fig. 2 dotted line, is two-phase power MOS pipe H bridge drive circuit connection diagram of the present invention.
Detailed description of the invention
Below in conjunction with Figure of description, the present invention is described in further detail, refers to Figure of description 2.
As shown in Figure 2, a kind of high-power MOS tube high-speed driving circuit, the base stage of triode VT1 and inputSignal PWM1 is connected, and the base stage of triode VT2 is connected with input signal PWM2;
Triode VT1 colelctor electrode connects the second resistance R 2, and R2 is by the first resistance R 1 and positive supply+VCCConnect, the grid of technotron Q1 is connected with R1, R2 common port, technotron Q1 drain electrodeBe connected with positive supply+VCC, technotron Q1 source electrode is connected with the positive pole of Zener diode Z1, withTime technotron Q1 source electrode by resistance R 3 ground connection, the anodal and resistance R G1 phase of Zener diode Z1Connect the gate drive signal of the other end output mos pipe VJ1 of RG1;
Triode VT2 colelctor electrode connects the 3rd resistance R 3, and R3 is by the 4th resistance R 4 and negative supply VEEConnect, the grid of technotron Q2 is connected with R3, R4 common port, technotron Q2 drain electrodeVEE is connected with negative supply, and technotron Q2 source electrode is connected with the negative pole of Zener diode Z2, simultaneouslyTechnotron Q2 source electrode is by resistance R 10 ground connection, and Zener diode Z2 negative pole is connected with resistance R G2,The gate drive signal of the other end output mos pipe VJ2 of RG2;
Triode VT3 colelctor electrode connects the 6th resistance R 6, and R6 is by the 5th resistance R 5 and positive supply+VCCConnect, the grid of technotron Q3 is connected with R5, R6 common port, technotron Q3 drain electrodeBe connected with positive supply+VCC, technotron Q3 source electrode is connected with the positive pole of Zener diode Z3,Technotron Q3 source electrode passes through resistance R 11 ground connection simultaneously, Zener diode Z3 positive pole and resistance R G3Be connected, the gate drive signal of the other end output mos pipe VJ3 of RG3;
Triode VT4 colelctor electrode connects the 7th resistance R 7, and R7 is by the 8th resistance R 8 and negative supply VEEBe connected, the grid of technotron Q4 is connected with R7, R8 common port, technotron Q4 drain electrodeVEE is connected with negative supply, and technotron Q4 source electrode is connected with the negative pole of Zener diode Z4, simultaneouslyTechnotron Q4 source electrode is by resistance R 12 ground connection, and Zener diode Z4 negative pole is connected with resistance R G4,The gate drive signal of the other end output mos pipe VJ4 of RG4.
Q1, Q3 are N channel junction field-effect pipe, and Q2, Q4 are P channel junction field-effect pipe; VT1,VT3 is NPN type triode, and VT2, VT4 are positive-negative-positive triode, the base earth of VT3, VT4,The emitter stage of VT1 is connected with the emitter stage of VT4, and the emitter stage of VT2 is connected with the emitter stage of VT3.
Embodiment:
Choose input capacitance at 2000pF, continuous on-state drain current IDThe power of=30A, threshold voltage+4VEach two the composition H bridge circuits of P channel MOS tube and N-channel MOS pipe (VJ1 and VJ3 are P raceway groove,VJ2 and VJ4 are N raceway groove) test. Choosing Q1 and Q3 is pinch-off voltage UGSThe junction type field of=-4VEffect pipe, Q2 and Q4 are pinch-off voltage UGSThe technotron of=+ 4V, Z1～Z4 is+8.5V voltage stabilizingThe Zener diode of value, get+27V of positive supply VCC voltage, get-27V of negative supply VEE voltage. According to formula(1)～(24) condition, gets R1=R4=R5=R8=3K Ω, R2=R3=R6=R7=2K Ω, R9=R10=R11=
R12＝7.5KΩ。
In the time that PWM1 signal is high level, double calculation technotron Q1, Q4 voltage across poles:
UG1＝+10.8V，US1＝+18.5V，UGS1＝-7.7V，UGD1＝-16.2V；
UG4＝-10.8V，US4＝-18.5V，UGS4＝+7.7V，UGD4＝+16.2V；
Known technotron Q1, the Q4 of now can making turn-offs, and shutoff voltage surplus is larger, thereby makes HPower MOS pipe VJ1, the VJ4 of bridge are open-minded. In the time that PWM1 signal is low level, the MOS of H bridgePipe VJ1, VJ4 turn-off.
In the time that PWM2 signal is low level, double calculation technotron Q2, Q3 voltage across poles:
UG2＝-10.8V，US2＝-18.5V，UGS2＝+7.7V，UGD2＝+16.2V；
UG3＝+10.8V，US3＝+18.5V，UGS3＝-7.7V，UGD3＝-16.2V；
Known technotron Q2, the Q3 of now can making turn-offs, and shutoff voltage surplus is larger, thereby makes HPower MOS pipe VJ2, the VJ3 of bridge are open-minded. In the time that PWM1 signal is high level, the MOS of H bridgePipe VJ2, VJ3 turn-off.
After tested, the H bridge power MOS pipe of choosing turns on and off the time at 1.0 μ s, at prime input letterNumber PWM1 and PWM dead band are 0 o'clock, two-phase power MOS pipe H bridge drive circuit output to powerThe gate drive signal of MOS has the dead band of 4.0 μ s, and the straight-through phenomenon of burning of power MOS pipe does not occur.Power consumption comparison: adopt identical power MOS pipe and Zener diode, the circuit in accompanying drawing 1 drives for makingMoving speed, the resistance value of getting R1～R8 is 200 Ω, accompanying drawing 1 circuitry consumes power can be approximated to be resistanceThe power that R1～R8 consumes, is calculated as:
W1≈8*(VCC-VZ1)2/R2+VZ1 2/R1＝16.8w， (25)
In accompanying drawing 2, drive circuit consumed power of the present invention can be approximated to be the power that resistance R 1～R12 consumes, and calculatesAs follows:
W2≈8*VCC2/(R1+R2)2+4*(VCC-VZ1)2/R3＝1.52w， (26)
As can be seen here, the power consumption of drive circuit of the present invention also reduces greatly.
Claims (4)
1. a high-power MOS tube H bridge high-speed driving circuit, comprises resistance, triode, junction type field effectYing Guan, is characterized in that:
The base stage of the first triode VT1 is connected with input signal PWM1, the base stage of the second triode VT2 withInput signal PWM2 is connected;
The first triode VT1 colelctor electrode connects the second resistance R 2, the second resistance R 2 by the first resistance R 1Be connected the grid of the first technotron Q1 and the first resistance R 1, the second resistance with positive supply+VCCR2 common port connects, and the first technotron Q1 drain electrode is connected with positive supply+VCC, the first junction type field effectShould manage Q1 source electrode and be connected with the positive pole of the first Zener diode Z1, simultaneously the first technotron Q1 source electrodeBy the 9th resistance R 9 ground connection, the first Zener diode Z1 positive pole is connected with the 21 resistance R G1, theThe other end of 21 resistance R G1 is exported the gate drive signal of the first metal-oxide-semiconductor VJ1;
The second triode VT2 colelctor electrode connects the 3rd resistance R 3, the three resistance R 3 by the 4th resistance R 4VEE is connected with negative supply, the grid of the second technotron Q2 and the 3rd resistance R 3, the 4th resistance R 4Common port connects, and the second technotron Q2 drain electrode is connected with negative supply VEE, the second junction fieldPipe Q2 source electrode is connected with the negative pole of the second Zener diode Z2, and the second technotron Q2 source electrode is logical simultaneouslyCross the tenth resistance R 10 ground connection, the second Zener diode Z2 negative pole is connected with the 22 resistance R G2, RG2The other end export the gate drive signal of the second metal-oxide-semiconductor VJ2;
The 3rd triode VT3 colelctor electrode connects the 6th resistance R 6, the six resistance R 6 by the 5th resistance R 5Be connected the grid of the 3rd technotron Q3 and the 5th resistance R 5, the 6th resistance with positive supply+VCCR6 common port connects, and the 3rd technotron Q3 drain electrode is connected with positive supply+VCC, the 3rd junction type field effectShould manage Q3 source electrode and be connected with the positive pole of the 3rd Zener diode Z3, technotron Q3 source electrode passes through simultaneouslyThe 11 resistance R 11 ground connection, the 3rd Zener diode Z3 positive pole is connected with the 23 resistance R G3, theThe gate drive signal of other end output the 3rd metal-oxide-semiconductor VJ3 of 23 resistance R G3;
The 4th triode VT4 colelctor electrode connects the 7th resistance R 7, the seven resistance R 7 by the 8th resistance R 8VEE is connected with negative supply, the grid of the 4th technotron Q4 and the 7th resistance R 7, the 8th resistance R 8Common port connects, and the 4th technotron Q4 drain electrode is connected with negative supply VEE, the 4th junction fieldPipe Q4 source electrode is connected with the negative pole of the 4th Zener diode Z4, and the 4th technotron Q4 source electrode is logical simultaneouslyCross the 12 resistance R 12 ground connection, the 4th Zener diode Z4 negative pole is connected with the 24 resistance R G4,The gate drive signal of the other end of the 24 RG4 the 4th output mos pipe VJ4.
2. high-power MOS tube H bridge high-speed driving circuit according to claim 1, is characterized in that:The first technotron Q1, the 3rd technotron Q3 are N channel junction field-effect pipe, the second knotType FET Q2, the 4th technotron Q4 are P channel junction field-effect pipe.
3. high-power MOS tube H bridge high-speed driving circuit according to claim 1, is characterized in that:The first triode VT1, the 3rd triode VT3 are NPN type triode, the second triode VT2, the four or threeUtmost point pipe VT4 is positive-negative-positive triode.
4. high-power MOS tube H bridge high-speed driving circuit according to claim 3, is characterized in that:The base earth of the 3rd triode VT3, the 4th triode VT4, the emitter stage of the first triode VT1 andThe emitter stage of four triode VT4 is connected, and the emitter stage of the second triode VT2 and the 3rd triode VT3 send outEmitter-base bandgap grading is connected.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107800337A (en) * | 2017-10-27 | 2018-03-13 | 北京精密机电控制设备研究所 | The integrated H bridge DC motor Driver modules of single supply power supply of complementary dead band band isolation |
| CN108683327A (en) * | 2018-06-12 | 2018-10-19 | 西北工业大学 | A kind of silicon carbide MOSFET driving circuit |
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2012
- 2012-05-03 CN CN201218000975.6A patent/CN106342399B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107800337A (en) * | 2017-10-27 | 2018-03-13 | 北京精密机电控制设备研究所 | The integrated H bridge DC motor Driver modules of single supply power supply of complementary dead band band isolation |
| CN107800337B (en) * | 2017-10-27 | 2021-05-18 | 北京精密机电控制设备研究所 | Single-power-supply integrated H-bridge direct-current motor driving module with isolated complementary dead zone |
| CN108683327A (en) * | 2018-06-12 | 2018-10-19 | 西北工业大学 | A kind of silicon carbide MOSFET driving circuit |
| CN108683327B (en) * | 2018-06-12 | 2020-02-14 | 西北工业大学 | Silicon carbide MOSFET drive circuit |
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