CN202383221U

CN202383221U - IGBT (insulated gate bipolar translator) simulator for testing high-voltage inverter drive circuit

Info

Publication number: CN202383221U
Application number: CN2011205575863U
Authority: CN
Inventors: 李长龙; 冯芬
Original assignee: WOLONG ELECTRICAL GROUP HANGZHOU RESEARCH INSTITUTE Co Ltd; Wolong Electric Group Co Ltd
Current assignee: WOLONG ELECTRICAL GROUP HANGZHOU RESEARCH INSTITUTE Co Ltd; Wolong Electric Drive Group Co Ltd
Priority date: 2011-12-28
Filing date: 2011-12-28
Publication date: 2012-08-15
Anticipated expiration: 2021-12-28

Abstract

The utility model discloses an IGBT (insulated gate bipolar translator) simulator for testing a high-voltage inverter drive circuit, and relates to a test device of the high-voltage inverter drive circuit. At present, the test on the drive circuit of a high-voltage inverter is complicated and high in cost and has certain danger. The IGBT simulator disclosed by the utility model is characterized by comprising an MOSFET (metal-oxide-semiconductor field effect transistor), and a slide potentiometer serially connected with the MOSFET. According to the technical scheme, the IGBT simulator is small in volume, light in weight, simple in structure and convenient in use. In test, the IGBT simulator not only can utilize a miniature power apparatus instead of an IGBT to test the drive circuit, but also can simulate the current passing through the IGBT, and can conveniently adjust the size of analogue current to test the functions such as over-current protection and the like.

Description

A kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test is intended device

Technical field

The utility model belongs to the high voltage converter technical field, relates to a kind of proving installation of high voltage converter IGBT tube drive circuit.

Background technology

At present; The insulated gate bipolar transistor (IGBT pipe) that domestic high voltage converter manufacturer is adopted is because of the needs of critical technical parameter selection aspects such as withstand voltage, electric current; Its volume, weight are all bigger, and IGBT pipe itself is expensive and as easy as rolling off a logly caused disabler by electrostatic breakdown, and its great majority are the solid shape that commercial Application is formulated for external IGBT pipe manufacturer; Can not change flexibly, be inconvenient to test.Many producers are for being afraid of to damage the attitude that the IGBT pipe generally takes to trust supplier; Think that the power device performance of import is all relatively good; Do not test and directly use; But in the process of research and development driving circuit, must use corresponding IGBT pipe to test again, when so more domestic high voltage converter manufacturers carry out the driving circuit test in development, get extra use IGBT and manage and make test fixture or constantly run between high voltage transducer power unit and testing table; The loaded down with trivial details property that this has just increased R&D work has improved R&D costs.And need add high voltage during test driving circuit overcurrent protection performance, certain risk is arranged.

The utility model content

The technical matters that the utility model will solve and the technical assignment of proposition are that the prior art scheme is improved and improved; Provide a kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test to intend device, so that the IGBT tube drive circuit is tested the simple effective and safe purpose of carrying out.For this reason, the utility model is taked following technical scheme.

A kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test is intended device, it is characterized in that: comprise MOSFET pipe, the slide potentiometer of connecting with the MOSFET pipe.Present technique scheme volume is little; In light weight; Simple in structure, easy to use, when test this IGBT pipe die intend device and can not only utilize the mini power device to replace IGBT to manage driving circuit is tested; And can simulate the electric current through IGBT pipe, the size that more can easily regulate analog current is carried out the test of function such as overcurrent protection.

As the further of technique scheme improved and replenish, the utility model also comprises following additional technical feature.

The grid of MOSFET pipe, source electrode, receive on the driving circuit corresponding to the grid and the emitter of IGBT pipe, the drain electrode of MOSFET pipe is connected with an end of slide potentiometer, and the other end of slide potentiometer is received on the driving circuit corresponding to the collector that IGBT manages.Its internal resistance after complete conducting of IGBT pipe remains unchanged basically and is approximately 18m Ω; The conduction voltage drop of IGBT pipe is also along with change when flowing through the electric current change of IGBT pipe; And be linear change basically; And high voltage converter generally is to adopt detection IGBT pipe conduction voltage drop to judge to flow through IGBT tube current size, and according to the conduction voltage drop size over-current protection point of power cell is set.According to above-mentioned principle; The utility model replaces the IGBT pipe with the lower MOSFET pipe of driving voltage, and the grid of MOSFET pipe, source electrode are received on the driving circuit corresponding to the grid and the emitter of IGBT pipe, and at accurate slide potentiometer of drain electrode series connection of MOSFET pipe; Other one of slide potentiometer terminates to the collector terminal of driving circuit corresponding to the IGBT pipe; The adjustable side of potentiometer can be arbitrarily link to each other with drain electrode of MOSFET pipe or driving circuit, detects IGBT and manages because this MOSFET pipe conducting internal resistance also about 18m Ω, can let driving circuit think like this; And output drive signal, thereby whole driving circuit is detected; Change the variation that driving circuit drain electrode point dividing potential drop is simulated the conduction voltage drop of IGBT pipe in the practical application through changing the slide potentiometer resistance, realize current detecting, protection partial circuit test purpose in the driving circuit.

The conducting internal resistance of MOSFET pipe is 18m Ω.

Beneficial effect: present technique scheme volume is little; In light weight; Simple in structure, easy to use, when test this IGBT pipe die intend device and can not only utilize the mini power device to replace IGBT to manage driving circuit is tested; And can simulate the electric current through IGBT pipe, the size that more can easily regulate analog current is carried out the test of function such as overcurrent protection.

Description of drawings

Fig. 1 is that existing high voltage converter is with IGBT pipe driving principle figure.

Fig. 2 is the driving circuit test philosophy figure of the utility model.

Among the figure, 1, IGBT pipe; 2, slide potentiometer; 3, MOSFET pipe; 4, the IGBT pipe die is intended device.

Embodiment

Below in conjunction with Figure of description the technical scheme of the utility model is done further detailed description.

Existing high voltage converter is managed driving principle with IGBT, and is as shown in Figure 1, and driving circuit is provided with two IGBT pipes 1, when the collector C at IGBT pipe 1 flows through big electric current with the emitter E two ends, and collector C and emitter E two ends pressure drop V that IGBT manages _CEThe conduction voltage drop of IGBT pipe 1 for this reason because IGBT manages 1 conducting internal resistance basic fixed, therefore, just can draw the size of current that flows through IGBT pipe 1 according to the size of VCE, and driving circuit is through monitoring V _CEConfirm the duty of frequency converter, suitably take the protection action.

The utility model is as shown in Figure 2, and the IGBT pipe die is intended device 4 and comprised MOSFET pipe 3, the slide potentiometer 2 of connecting with MOSFET pipe 3.The grid G of MOSFET pipe 3, source S, receive on the driving circuit corresponding to the grid G and the emitter E of IGBT pipe 3; The drain D of MOSFET pipe 3 is connected with an end of slide potentiometer 2, and the other end of slide potentiometer 2 is received on the driving circuit corresponding to the collector C of IGBT pipe 1.The conducting internal resistance of MOSFET pipe 3 is 18m Ω.IGBT pipe 1 its internal resistance after complete conducting remains unchanged basically and is approximately 18m Ω; The conduction voltage drop of IGBT pipe 1 is also along with change when flowing through the electric current change of IGBT pipe 1; And be linear change basically; And high voltage converter generally is to adopt detection IGBT to manage 1 conduction voltage drop to judge that flowing through IGBT manages 1 size of current, and according to the conduction voltage drop size over-current protection point of power cell is set.According to above-mentioned principle; The utility model replaces IGBT pipe 1 with a lower MOSFET pipe 3 of driving voltage; Grid G, the source S of MOSFET pipe 3 are received on the driving circuit corresponding to the grid G and the emitter E of IGBT pipe 1; And at accurate slide potentiometer 2 of drain electrode series connection of MOSFET pipe, other one of slide potentiometer 2 terminates to the collector C end of driving circuit corresponding to IGBT pipe 1, and the adjustable side of slide potentiometer 2 can arbitrarily manage 3 drain D with MOSFET or driving circuit links to each other; Because this MOSFET manages 3 conducting internal resistances also about 18m Ω; Can let driving circuit think like this and detect IGBT pipe 1, and output drive signal, thereby whole driving circuit is detected; Change the variation that driving circuit drain electrode point dividing potential drop is simulated the conduction voltage drop of IGBT pipe 1 in the practical application through changing slide potentiometer 2 resistances, realize current detecting, protection partial circuit test purpose in the driving circuit.

More than a kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test shown in Figure 2 to intend device be the specific embodiment of the utility model; The utility model substantive distinguishing features and progress have been embodied; Can be according to the use needs of reality; Under the enlightenment of the utility model, it is carried out the equivalent modifications of aspects such as shape, structure, all at the row of the protection domain of this programme.

Claims

1. an IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test is intended device, it is characterized in that: comprise MOSFET pipe (3), the slide potentiometer (2) of connecting with MOSFET pipe (3).

2. a kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test according to claim 1 is intended device; It is characterized in that: the grid (G) of MOSFET pipe (3), source electrode (S), receive on the driving circuit corresponding to the grid (G) and the emitter (E) of IGBT pipe (1); The drain electrode (D) of MOSFET pipe (3) is connected with an end of slide potentiometer (2), and the other end of slide potentiometer (2) is received on the driving circuit corresponding to the collector (C) of IGBT pipe (1).

3. a kind of IGBT pipe die that is used for the driving circuit of high-voltage frequency converter test according to claim 2 is intended device, and it is characterized in that: the conducting internal resistance of MOSFET pipe (3) is 18m Ω.