CN203313079U - Synchronous rectification circuit - Google Patents

Synchronous rectification circuit Download PDF

Info

Publication number
CN203313079U
CN203313079U CN2013202180758U CN201320218075U CN203313079U CN 203313079 U CN203313079 U CN 203313079U CN 2013202180758 U CN2013202180758 U CN 2013202180758U CN 201320218075 U CN201320218075 U CN 201320218075U CN 203313079 U CN203313079 U CN 203313079U
Authority
CN
China
Prior art keywords
positive
triode
effect transistor
field effect
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2013202180758U
Other languages
Chinese (zh)
Inventor
郑方耀
钱仁达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU INDUSTRIAL PARK HUABO ELECTRONIC TECHNOLOGY Co Ltd
Original Assignee
SUZHOU INDUSTRIAL PARK HUABO ELECTRONIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU INDUSTRIAL PARK HUABO ELECTRONIC TECHNOLOGY Co Ltd filed Critical SUZHOU INDUSTRIAL PARK HUABO ELECTRONIC TECHNOLOGY Co Ltd
Priority to CN2013202180758U priority Critical patent/CN203313079U/en
Application granted granted Critical
Publication of CN203313079U publication Critical patent/CN203313079U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Rectifiers (AREA)

Abstract

The utility model provides a synchronous rectification circuit which is characterized in that the circuit is arranged at one side of a transformer secondary coil and mainly comprises an N type MOS field effect transistor, a PNP type triode and a NPN type triode; the transformer secondary coil is sampled by resistors and capacitors to control the switching of a pair of triodes, the triodes control the switching of the N type MOS field effect transistor, the collectors of the triodes are connected with the grid of the N type MOS field effect transistor to control the switching of the N type MOS field effect transistor, enough current is provided, and thus the purpose of synchronous rectification can be achieved through the controlling the turn-on and turn-off of the N type MOS field effect transistor by the combination of a pair of triodes, the resistors and the capacitors at different times.

Description

A kind of circuit of synchronous rectification
Technical field
The utility model relates to switching power circuit, relates in particular to a kind of circuit of synchronous rectification.
Background technology
Along with the development of electronic technology, make the operating voltage of circuit more and more lower, electric current is increasing, low voltage operating is conducive to reduce the overall power consumption of circuit, but also to Power Management Design, has proposed a new difficult problem.Nowadays, synchronous rectification extensive use with the requirement of adaptive circuit low pressure, large electric current.Current synchronous rectification is mainly with the control of chip as synchronous rectification, and cost is higher.So, how to provide that a kind of cost is low, simple in structure, synchronous rectification is effective circuit of synchronous rectification just become research topic of the present utility model.
Summary of the invention
The purpose of this utility model is to provide the circuit of synchronous rectification that a kind of cost is low, simple in structure and synchronous rectification is effective.
For achieving the above object, the technical solution adopted in the utility model is: a kind of circuit of synchronous rectification, be located at transformer secondary output coil one side, and mainly comprise a N-type metal-oxide-semiconductor field effect transistor, a positive-negative-positive triode and a NPN type triode;
Side a and b is divided at the two ends of described transformer secondary output coil, the emitter of described positive-negative-positive triode is connected with described A end, the base stage of positive-negative-positive triode separates two-way, first resistance of leading up to is connected with the A end, another road is by being connected with described B end after the 3rd resistance and the first capacitances in series, the collector electrode of described positive-negative-positive triode is divided into two-way after by the 4th resistance, one tunnel is connected with the grid of described N-type metal-oxide-semiconductor field effect transistor, another road is connected with the collector electrode of described NPN type triode, the source electrode of described N-type metal-oxide-semiconductor field effect transistor is connected with described B end, the drain electrode of N-type metal-oxide-semiconductor field effect transistor is connected with the emitter of described NPN type triode, the base stage of NPN type triode separates two-way, one second resistance of leading up to is connected with the emitter of positive-negative-positive triode, another road is connected with the drain electrode of N-type metal-oxide-semiconductor field effect transistor by one the 6th resistance, the base stage of described NPN type triode is connected with the source electrode of N-type metal-oxide-semiconductor field effect transistor by after one the 7th resistance and the second capacitances in series, between the collector electrode of the drain electrode of N-type metal-oxide-semiconductor field effect transistor and NPN type triode, be provided with one the 5th resistance,
The emitter of the emitter of described positive-negative-positive triode and NPN type triode is as two outputs, and the voltage between the emitter of the emitter of positive-negative-positive triode and NPN type triode is as output voltage.
Related content in technique scheme is explained as follows:
1, in such scheme, when described A end for voltage for negative, the B terminal voltage is timing, the cut-off of positive-negative-positive triode, the conducting of NPN type triode, the grid voltage that makes the N-type metal-oxide-semiconductor field effect transistor is low, can't conducting, export and complete by capacitor discharge; When the A terminal voltage for just, the B terminal voltage when negative, the conducting of positive-negative-positive triode, the cut-off of NPN type triode, make the grid of N-type metal-oxide-semiconductor field effect transistor that enough voltage be arranged, the conducting of N-type metal-oxide-semiconductor field effect transistor;
Due in the situation that the conducting resistance of large electric current metal-oxide-semiconductor field effect transistor is very little, generally only have tens even several milliohms of milliohm, the nearly 0.5 ~ 0.7V of the pressure drop of rectifying tube does not wait, in the situation that large electric current, the odds for effectiveness of synchronous rectification is very obvious.
The utility model operation principle and advantage:
The utility model is realized by resistance and the electric capacity method to a pair of triode switch of transformer secondary output coil controlling of sampling, wherein electric capacity and resistance play sampling and signal acceleration, triode is being controlled switch and the signal amplification of N-type metal-oxide-semiconductor field effect transistor, the collector electrode of triode is connected its switch of control with the grid of N-type metal-oxide-semiconductor field effect transistor, and enough electric currents are provided, the turn-on and turn-off that are combined in different time control N-type metal-oxide-semiconductor field effect transistor by a pair of triode and resistance capacitance just can reach the purpose of synchronous rectification like this; When the A of described transformer secondary output coil end for current potential for negative, the B terminal potential is timing, the cut-off of positive-negative-positive triode, the conducting of NPN type triode, the grid voltage that makes the N-type metal-oxide-semiconductor field effect transistor is low, can't conducting, export and complete by capacitor discharge; When the A terminal potential for just, the B terminal potential when negative, the conducting of positive-negative-positive triode, the cut-off of NPN type triode, make the grid of N-type metal-oxide-semiconductor field effect transistor that enough voltage be arranged, the conducting of N-type metal-oxide-semiconductor field effect transistor; Due in the situation that the conducting resistance of large electric current metal-oxide-semiconductor field effect transistor is very little, generally only have tens even several milliohms of milliohm, the nearly 0.5 ~ 0.7V of the pressure drop of rectifying tube does not wait, in the situation that large electric current, the odds for effectiveness of synchronous rectification is very obvious.
The accompanying drawing explanation
Accompanying drawing 1 is the utility model embodiment circuit diagram.
In above accompanying drawing: TR, transformer secondary output coil; Q1, positive-negative-positive triode; Q2, NPN type triode; Q3, N-type metal-oxide-semiconductor field effect transistor; R1, the first resistance; R2, the second resistance; R3, the 3rd resistance; R4, the 4th resistance; R5, the 5th resistance; R6, the 6th resistance; R7, the 7th resistance; C1, the first electric capacity; C2, the second electric capacity; C3, the 3rd electric capacity.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described:
Embodiment: a kind of circuit of synchronous rectification
Shown in accompanying drawing 1, be located at transformer secondary output coil TR mono-side, mainly comprise a N-type metal-oxide-semiconductor field effect transistor Q3, a positive-negative-positive triode Q1 and a NPN type triode Q2.
Side a and b is divided at the two ends of described transformer secondary output coil TR, the emitter of described positive-negative-positive triode Q1 is connected with described A end, the base stage of positive-negative-positive triode Q1 separates two-way, first resistance R 1 of leading up to is connected with the A end, the 3rd resistance R 3 is passed through on another road and the first capacitor C 1 series connection is rear and described B end is connected, the collector electrode of described positive-negative-positive triode Q1 is divided into two-way after by the 4th resistance R 4, one tunnel is connected with the grid of described N-type metal-oxide-semiconductor field effect transistor Q3, another road is connected with the collector electrode of described NPN type triode Q2, the source electrode of described N-type metal-oxide-semiconductor field effect transistor Q3 is connected with described B end, the drain electrode of N-type metal-oxide-semiconductor field effect transistor Q3 is connected with the emitter of described NPN type triode, the base stage of NPN type triode Q2 separates two-way, one second resistance R 2 of leading up to is connected with the emitter of positive-negative-positive triode, another road is connected with the drain electrode of N-type metal-oxide-semiconductor field effect transistor Q3 by one the 6th resistance R 6, the base stage of described NPN type triode Q2 is passed through with the source electrode of N-type metal-oxide-semiconductor field effect transistor Q3, to be connected after one the 7th resistance R 7 and the second capacitor C 2 series connection, between the collector electrode of the drain electrode of N-type metal-oxide-semiconductor field effect transistor Q3 and NPN type triode Q2, be provided with one the 5th resistance R 5.
The emitter of the emitter of described positive-negative-positive triode Q1 and NPN type triode Q2 is as two outputs, and the voltage between the emitter of the emitter of positive-negative-positive triode Q1 and NPN type triode Q2 is as output voltage.
Between the emitter of the emitter of described positive-negative-positive triode Q1 and NPN type triode Q2, be provided with the electric capacity for filtering.
The utility model is realized by resistance and the electric capacity method to a pair of triode switch of transformer secondary output coil TR controlling of sampling, wherein electric capacity and resistance play sampling and signal acceleration, triode is being controlled switch and the signal amplification of N-type metal-oxide-semiconductor field effect transistor Q3, the collector electrode of triode is connected its switch of control with the grid of N-type metal-oxide-semiconductor field effect transistor Q3, and enough electric currents are provided, the turn-on and turn-off that are combined in different time control N-type metal-oxide-semiconductor field effect transistor Q3 by a pair of triode and resistance capacitance just can reach the purpose of synchronous rectification like this; When the A of described transformer secondary output coil TR end is negative for current potential, the B terminal potential is timing, positive-negative-positive triode Q1 cut-off, NPN type triode Q2 conducting, the grid voltage that makes N-type metal-oxide-semiconductor field effect transistor Q3 is low, can't conducting, output completes by capacitor discharge, and output C end is for just, and the D end is for bearing; When the A terminal potential for just, the B terminal potential when negative, positive-negative-positive triode Q1 conducting, NPN type triode Q2 cut-off, make the grid of N-type metal-oxide-semiconductor field effect transistor Q3 that enough voltage be arranged, N-type metal-oxide-semiconductor field effect transistor Q3 conducting, output C end is for just, the D end is for bearing.
Due in the situation that the conducting resistance of large electric current metal-oxide-semiconductor field effect transistor Q3 is very little, generally only have tens even several milliohms of milliohm, the nearly 0.5 ~ 0.7V of the pressure drop of rectifying tube does not wait, in the situation that large electric current, the odds for effectiveness of synchronous rectification is very obvious.
Above-described embodiment only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the person skilled in the art can understand content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model Spirit Essence change or modify, within all should being encompassed in protection range of the present utility model.

Claims (2)

1. a circuit of synchronous rectification, is characterized in that: be located at transformer secondary output coil (TR) side, mainly comprise a N-type metal-oxide-semiconductor field effect transistor (Q3), a positive-negative-positive triode (Q1) and a NPN type triode (Q2);
Side a and b is divided at the two ends of described transformer secondary output coil (TR), the emitter of described positive-negative-positive triode (Q1) is connected with described A end, the base stage of positive-negative-positive triode (Q1) separates two-way, the first resistance (R1) of leading up to is connected with the A end, the 3rd resistance (R3) is passed through on another road and the first electric capacity (C1) series connection is rear and described B end is connected, the collector electrode of described positive-negative-positive triode (Q1) is divided into two-way after by the 4th resistance (R4), one tunnel is connected with the grid of described N-type metal-oxide-semiconductor field effect transistor (Q3), another road is connected with the collector electrode of described NPN type triode (Q2), the source electrode of described N-type metal-oxide-semiconductor field effect transistor (Q3) is connected with described B end, the drain electrode of N-type metal-oxide-semiconductor field effect transistor (Q3) is connected with the emitter of described NPN type triode, the base stage of NPN type triode (Q2) separates two-way, one second resistance (R2) of leading up to is connected with the emitter of positive-negative-positive triode, another road is connected with the drain electrode of N-type metal-oxide-semiconductor field effect transistor (Q3) by one the 6th resistance (R6), the base stage of described NPN type triode (Q2) is connected with the source electrode of N-type metal-oxide-semiconductor field effect transistor (Q3) with the second electric capacity (C2) series connection is rear by one the 7th resistance (R7), between the collector electrode of the drain electrode of N-type metal-oxide-semiconductor field effect transistor (Q3) and NPN type triode (Q2), be provided with one the 5th resistance (R5),
The emitter of the emitter of described positive-negative-positive triode (Q1) and NPN type triode (Q2) is as two outputs, and the voltage between the emitter of the emitter of positive-negative-positive triode (Q1) and NPN type triode (Q2) is as output voltage.
2. circuit of synchronous rectification according to claim 1, is characterized in that: be provided with the electric capacity for filtering between the emitter of the emitter of described positive-negative-positive triode (Q1) and NPN type triode (Q2).
CN2013202180758U 2013-04-25 2013-04-25 Synchronous rectification circuit Expired - Fee Related CN203313079U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013202180758U CN203313079U (en) 2013-04-25 2013-04-25 Synchronous rectification circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013202180758U CN203313079U (en) 2013-04-25 2013-04-25 Synchronous rectification circuit

Publications (1)

Publication Number Publication Date
CN203313079U true CN203313079U (en) 2013-11-27

Family

ID=49619251

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013202180758U Expired - Fee Related CN203313079U (en) 2013-04-25 2013-04-25 Synchronous rectification circuit

Country Status (1)

Country Link
CN (1) CN203313079U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104135147A (en) * 2014-07-30 2014-11-05 广州金升阳科技有限公司 Synchronous switch circuit for PFC
CN104242249A (en) * 2014-09-17 2014-12-24 广州金升阳科技有限公司 Protective circuit of switching power supply
CN104348351A (en) * 2014-07-11 2015-02-11 广州金升阳科技有限公司 Synchronous switch circuit for PFC (power factor correction)
CN105207479A (en) * 2015-10-26 2015-12-30 广州金升阳科技有限公司 Controllable boost circuit
CN114785167A (en) * 2022-03-23 2022-07-22 电子科技大学 Controllable rectifying circuit and voltage stabilization control method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104348351A (en) * 2014-07-11 2015-02-11 广州金升阳科技有限公司 Synchronous switch circuit for PFC (power factor correction)
CN104348351B (en) * 2014-07-11 2017-03-22 广州金升阳科技有限公司 Synchronous switch circuit for PFC (power factor correction)
CN104135147A (en) * 2014-07-30 2014-11-05 广州金升阳科技有限公司 Synchronous switch circuit for PFC
CN104242249A (en) * 2014-09-17 2014-12-24 广州金升阳科技有限公司 Protective circuit of switching power supply
CN104242249B (en) * 2014-09-17 2017-08-29 广州金升阳科技有限公司 A kind of protection circuit of Switching Power Supply
CN105207479A (en) * 2015-10-26 2015-12-30 广州金升阳科技有限公司 Controllable boost circuit
CN105207479B (en) * 2015-10-26 2017-08-25 广州金升阳科技有限公司 A kind of controllable booster circuit
CN114785167A (en) * 2022-03-23 2022-07-22 电子科技大学 Controllable rectifying circuit and voltage stabilization control method thereof
CN114785167B (en) * 2022-03-23 2023-04-07 电子科技大学 Controllable rectification circuit and voltage stabilization control method thereof

Similar Documents

Publication Publication Date Title
CN203313079U (en) Synchronous rectification circuit
CN203326653U (en) Solar energy storage battery charging circuit
CN201918971U (en) Novel bidirectional analog switching circuit
CN203313051U (en) Efficient release circuit structure
CN103414163A (en) Direct-current power supply output overcurrent protection device
CN202218012U (en) Power supply having reversal connection protection function
CN206099293U (en) High voltage input protection circuit
CN104467435A (en) Balance modulation type multiplex output stabilized voltage supply based on logic protection amplifying circuit
CN203522680U (en) Time-delay circuit
CN209046315U (en) A kind of lithium electricity charging anti-back flow circuit
CN203661026U (en) Light-operated touch circuit
CN103728889B (en) Card type wall power-saving switch
CN207884494U (en) A kind of positive-negative power generation circuit suitable for IGBT drivings
CN202888807U (en) Overcurrent protection circuit and switch power supply for half-bridge circuit
CN207530535U (en) A kind of voltage control circuit for automatic transfer switch controller
CN201733130U (en) Power supply management module circuit
CN205070961U (en) Time switch circuit of low -power consumption for electric light
CN202586291U (en) Overload protection circuit
CN204145449U (en) A kind of solid-state relay circuit
CN203574360U (en) Refrigerator with surge protection
CN204807617U (en) Peak value detection circuit
CN203800910U (en) Thyristor valve body
CN203027129U (en) RCD (Residual Current Device) circuit for reducing voltage stress of switching power supply MOS (Metal Oxide Semiconductor) tube
CN202737833U (en) Anti-misleading circuit of MOS tube
CN203406847U (en) Circuit switching double ends to single end

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131127

Termination date: 20160425