CN2879415Y - Flat plate display with cathode regulating resistance structure - Google Patents
Flat plate display with cathode regulating resistance structure Download PDFInfo
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- CN2879415Y CN2879415Y CN 200520032295 CN200520032295U CN2879415Y CN 2879415 Y CN2879415 Y CN 2879415Y CN 200520032295 CN200520032295 CN 200520032295 CN 200520032295 U CN200520032295 U CN 200520032295U CN 2879415 Y CN2879415 Y CN 2879415Y
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Abstract
The utility model relates to a flat plate display comprising a sealing vacuum chamber composed of a cathode panel, an anode panel and ambient glass frame, the anode panel is provided with a photolithography stannum-indium oxide film layer, a phosphor layer prepared on the stannum-indium oxide film layer and a control gate for controlling electron emitting of a carbon nanometer tube, the cathode panel is provided with a printed carbon nanometer tube cathode, a supporting wall structure and a getter material attaching member, further provided with a cathode adjusting resistor structure for adjusting a value of a current flowed through a conductive layer of the carbon nanometer tube, the utility model has advantages of low cost, stable and reliable manufacturing process, high manufacturing success rate and simple structure.
Description
Technical field
The utility model belongs to the mutual crossing domain in Display Technique field, plane, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to and have field emission flat-panel screens anode regulating resistance structure, carbon nanotube cathod.
Background technology
Carbon nano-tube has little tip curvature radius, and high mechanical strength and good electrology characteristic under the effect of extra electric field, can be launched a large amount of electronics, is a kind of comparatively desirable cold cathode manufacturing materials.For the actual displayed device, image displaying quality is one of important technology index of whole carbon nanotube cathod field emission flat-panel screens making success or not.And realize a large amount of electronics of emission that carbon nanotube cathod can be even, stable, this is the precondition that shows good image.In the middle of present large area display spare was made, its negative electrode manufacture method all was to adopt grafting, promptly in conjunction with silk-screen printing technique, carbon nano-tube material is transplanted on the cathode conductive layer.In the process of transplanting, be subjected to concrete manufacture craft, roasting procedure, making slurry, press the influence of various factorss such as grinder preface, it is many that the ability of its field emitted electron has descended, but this is again the essential technical process that experience of its institute.So, how taking effective measures, can allow large-area carbon nanotube cathod realize even, stable emitting electrons, is the realistic problem that researchers face.
After carbon nano-tube material is transplanted on the cathode conductive layer, the ability of its field emitted electron also will be subjected to influence of various factors, for example: the influence of carbon nanotube cathod resistance conductive layer resistance, the influence of carbon nanotube cathode material state, the variation of same carbon nanotube cathod emissivities under different external conditions, the influence of the adhesive force of carbon nanotube cathod, or the like.Wherein the influencing factor of carbon nanotube cathod resistance conductive layer change in resistance is particularly outstanding, increase along with the device display area, the length of cathode conductive layer and width also increase thereupon, the quantity that is positioned at the carbon nanotube cathod on the same conductive layer accordingly is also in continuous increase, so just cause a kind of appearance of unfavorable condition easily: although promptly applied voltage has applied identical electromotive force on same cathode conductive layer, but be subjected to the influence of cathode conductive layer resistance, the actual electromotive force that imposes on different carbon nanotube cathods is inequality.Guarantee that so how all carbon nano-tube can obtain applying electrical potential much at one, this is the realistic problem that needs solve.On the other hand, in the conductive layer of carbon nanotube cathod, be subjected to the influence of resistance, cathode current size in different directions is inequality, this will cause a certain direction cathode current excessive, and the appearance of the too small phenomenon of other direction cathode current has formed extra burden for the cathodic electricity resistance layer, guarantee that so how cathode current can flow in the middle of resistive layer uniformly, this also is a urgent problem.
For the close carbon nanotube cathod of distance, owing to be subjected to the influence of extraneous factor, its field emission ability is difference to some extent, thereby causes the luminous degree of its corresponding fluorescent material also may distinguish to some extent.In this case, need carry out extra circuit and carry out the electricity adjusting, expectation allows the more weak carbon nanotube cathod of luminosity apply higher a little voltage, launch more electronics, improve the luminosity of this pixel, and allow the voltage on the more intense carbon nanotube cathod of luminosity reduce a little, reduce the brightness of this pixel.And also do not obtain more perfect solution for problem like that.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of flat device; When can carrying out large-area element manufacturing, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The purpose of this utility model be to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, that manufacturing process is reliable and stable, be made into the flat-panel display device that power is high, simple in structure, have anode regulating resistance structure.
The utility model comprise by negative electrode panel, anode plate and all around glass enclose the sealed vacuum chamber that frame constitutes; At the insulation paste layer and the phosphor powder layer of preparation on tin indium oxide rete that have on the anode plate between the tin indium oxide rete of photoetching; The control grid that is used for the emission of controlling carbon nanotube electronics; Carbon nanotube cathod and anode regulating resistance structure that printing is arranged on the negative electrode panel; Supporting wall structure and getter subsidiary component thereof, made anode regulating resistance structure, be used for regulating the conductive layer current value of carbon nanotube cathod of flowing through, so that guarantee the emitting electrons that carbon nano-tube can be uniform and stable, further improve the picture quality of flat panel display device, simplify the manufacture craft of device, improve the success rate of element manufacturing.
The fixed position of the anode regulating resistance structure in the utility model is for being fixed on the negative electrode panel; The base material of the anode regulating resistance structure in this utility model be large-scale, have quite good thermal endurance and an operability, that can independently make, with low cost High Performance Insulation material; The base material of the anode regulating resistance structure in the utility model is a glass, as soda-lime glass, and Pyrex; Conductive layer of the base material of the anode regulating resistance structure in the utility model existence on glass; The conductive layer of the anode regulating resistance structure in the utility model can be tin indium oxide rete, also can be gold, silver, nickel, chromium metal level; The tin indium oxide rete in the anode regulating resistance structure in the utility model and the making of metal level can be finished etching in conjunction with the photoetching process of routine; Conductive layer in the anode regulating resistance structure in the utility model is divided into two parts, wherein a part be positioned at negative electrode under the position, be referred to as vertically to regulate resistance electrode, be used for regulating the longitudinal electrical resistance resistance of cathode conductive layer, another part is positioned at the both sides of vertical adjusting resistance electrode, and be symmetrically distributed the lateral resistance resistance that is used for regulating cathode conductive layer; The top existence doping low-temperature polycrystalline silicon layer of the conductive layer in the anode regulating resistance structure in the utility model; Doping low-temperature polycrystalline silicon layer in the anode regulating resistance structure in the utility model can be one deck, also can be multilayer; Doping low-temperature polycrystalline silicon layer in the anode regulating resistance structure in the utility model can be the p type, also can be the n type; There is the layer of silicon dioxide insulating barrier above the doping low-temperature polycrystalline silicon layer in the anode regulating resistance structure in the utility model; The making of the silicon dioxide insulating layer in the anode regulating resistance structure in the utility model and etching can be finished in conjunction with the photoetching process of routine; Leave cathode aperture on the silicon dioxide insulating layer in the anode regulating resistance structure in the utility model; Preparation has cathode electrode in the cathode aperture in the anode regulating resistance structure in the utility model, and this cathode electrode forms good electricity with the doping low-temperature polycrystalline silicon layer and contacts; Cathode electrode in the anode regulating resistance structure in the utility model can be gold, silver, nickel, chromium metal level; In the anode regulating resistance structure in the utility model with made of carbon nanotubes on cathode electrode.
The utlity model has following good effect:
Anode regulating resistance structure in the utility model has many superior parts.One, the negative electrode in the utility model are regulated in the electrode structure, have prepared p type doping low-temperature polycrystalline silicon layer between cathode electrode and adjusting electrode, are used to regulate current of cathode.Utilize the electric conductivity of doping low temperature polycrystalline silicon, can successfully applied voltage be delivered to above the carbon nanotube cathod, utilize the characteristic of semiconductor of doped polycrystalline silicon simultaneously again, regulate for the electromotive force that is applied on the different carbon nanotube cathods.Excessive when the electric current on a certain pixel, when pixel brightness is too high, electric current through the overdoping low temperature polycrystalline silicon also can increase accordingly so, will bear more voltage on the doping low temperature polycrystalline silicon like this, weaken the voltage that is applied on the carbon nanotube cathod, reached the effect that reduces the carbon nano-tube emission current; Too small when the electric current of a certain pixel, when pixel brightness is low excessively, similar with the previous case, the voltage of being born on the doping low temperature polycrystalline silicon also can reduce accordingly, the voltage that is applied to so on the carbon nanotube cathod can all increases, thereby can improve the quantity of carbon nano-tube emitting electrons, the brightness of corresponding pixel also will strengthen.Like this, by regulating the different pixels point field emission ability of carbon nanotube cathod down, reaching the whole carbon nanotube cathod of realization can be evenly, stablize the target of emitting electrons, thereby realizes high-quality image quality.Its two, in anode regulating resistance structure, made vertical adjusting resistance electrode and lateral adjustments resistance electrode respectively, be used for respectively the cathode current of p type doping low temperature polycrystalline silicon being regulated.When vertically applying respectively under the situation of appropriate voltage on adjusting electrode and the lateral adjustments electrode, in p type doping low-temperature polycrystalline silicon layer, will form the electric field strength of different directions so, be used to guide the current direction and the size of current of different directions, prevent that current of cathode is too concentrated in a certain direction, cause components from being damaged.They are three years old, in the anode regulating resistance structure in the utility model, in cathode aperture, also made cathode electrode, promptly prepared the nickel metal electrode, its purpose utilizes the nickel metal electrode as transition zone exactly, make carbon nanotube cathod and p type doping low-temperature polycrystalline silicon layer can form good electricity basis, make applied voltage successfully to be applied on the carbon nanotube cathod.
In addition, in the manufacturing process of anode regulating resistance structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, the cost of manufacture that this has just further reduced whole flat-panel display device to a great extent helps carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of anode regulating resistance structure.
Fig. 2 has provided the transversary schematic diagram of anode regulating resistance structure.
Provided the structural representation of the embodiment of a carbon nanotube cathod field emission flat-panel screens that has an anode regulating resistance structure among Fig. 3.
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified, but the utility model is not limited to these embodiment.
The utility model comprises by negative electrode panel 1, anode plate 10 and all around glass enclose the sealed vacuum chamber that frame 14 constitutes, at the insulation paste layer 12 and the phosphor powder layer 13 of preparation on tin indium oxide rete 11 that have on the anode plate 10 between the tin indium oxide rete 11 of photoetching, the control grid 8 that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod 9 that printing is arranged on negative electrode panel 1, knee wall 16 structures and getter 15 subsidiary components thereof, negative electrode panel 1 are provided with and are used for regulating the anode regulating resistance structure of conductive layer current value of carbon nanotube cathod of flowing through.
Described anode regulating resistance structure comprises base material glass 1 successively, vertically regulates resistance electrode 2, lateral adjustments resistance electrode 3, doping low-temperature polycrystalline silicon layer 4, silicon dioxide insulating layer 5, cathode aperture 6, cathode electrode 7.The fixed position of described anode regulating resistance structure is for being fixed on the negative electrode panel, and the base material of anode regulating resistance structure is a glass, is one of soda-lime glass, Pyrex.There is a conductive layer on the base material of described anode regulating resistance structure, conductive layer can be one of tin indium oxide rete, gold, silver, nickel, chromium metal level, conductive layer in the anode regulating resistance structure is divided into two parts, wherein a part be positioned at negative electrode under vertical adjusting resistance electrode at position, be used for regulating the longitudinal electrical resistance resistance of cathode conductive layer, another part is positioned at the both sides of vertical adjusting resistance electrode, and be symmetrically distributed the lateral resistance resistance that is used for regulating cathode conductive layer.The top existence doping low-temperature polycrystalline silicon layer of the conductive layer of described anode regulating resistance structure, the doping low-temperature polycrystalline silicon layer can be one deck, also can be multilayer, the doping low-temperature polycrystalline silicon layer can be one of p type, n type, there is the layer of silicon dioxide insulating barrier above the doping low-temperature polycrystalline silicon layer, leave cathode aperture on the silicon dioxide insulating layer, preparation has cathode electrode in cathode aperture, this cathode electrode forms good electricity with the doping low-temperature polycrystalline silicon layer and contacts, cathode electrode can be one of gold, silver, nickel, chromium metal level, and made of carbon nanotubes is on cathode electrode.
Claims (5)
1, a kind of flat-panel monitor that has anode regulating resistance structure, comprise by negative electrode panel [1], anode plate [10] and all around glass enclose the sealed vacuum chamber that frame [14] constitutes, insulation paste layer [12] between the tin indium oxide rete [11] that photoetching is arranged on the anode plate [10] and the phosphor powder layer [13] of preparation on tin indium oxide rete [11], the control grid [8] that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod [9] that printing is arranged on negative electrode panel [1], knee wall [16] structure and getter [15] subsidiary component thereof is characterized in that: negative electrode panel [1] is provided with and is used for regulating the anode regulating resistance structure of conductive layer current value of carbon nanotube cathod of flowing through.
2, a kind of flat-panel monitor that has anode regulating resistance structure as claimed in claim 1 is characterized in that: described anode regulating resistance structure comprises base material glass [1] successively, vertically regulates resistance electrode [2], lateral adjustments resistance electrode [3], doping low-temperature polycrystalline silicon layer [4], silicon dioxide insulating layer [5], cathode aperture [6], cathode electrode [7].
3, a kind of flat-panel monitor that has anode regulating resistance structure as claimed in claim 2, it is characterized in that: the fixed position of described anode regulating resistance structure is for being fixed on the negative electrode panel, the base material of anode regulating resistance structure is a glass, is one of soda-lime glass, Pyrex.
4, a kind of flat-panel monitor that has anode regulating resistance structure as claimed in claim 2, it is characterized in that: have a conductive layer on the base material of described anode regulating resistance structure, conductive layer can be tin indium oxide rete, gold, silver, nickel, one of chromium metal level, conductive layer in the anode regulating resistance structure is divided into two parts, wherein a part be positioned at negative electrode under vertical adjusting resistance electrode at position, be used for regulating the longitudinal electrical resistance resistance of cathode conductive layer, another part is positioned at the both sides of vertical adjusting resistance electrode, and be symmetrically distributed the lateral resistance resistance that is used for regulating cathode conductive layer.
5, a kind of flat-panel monitor that has anode regulating resistance structure as claimed in claim 2, it is characterized in that: the top existence doping low-temperature polycrystalline silicon layer of the conductive layer of described anode regulating resistance structure, the doping low-temperature polycrystalline silicon layer can be one deck, also can be multilayer, the doping low-temperature polycrystalline silicon layer can be the p type, one of n type, there is the layer of silicon dioxide insulating barrier above the doping low-temperature polycrystalline silicon layer, leave cathode aperture on the silicon dioxide insulating layer, preparation has cathode electrode in cathode aperture, this cathode electrode forms good electricity with the doping low-temperature polycrystalline silicon layer and contacts, cathode electrode can be gold, silver, nickel, one of chromium metal level, made of carbon nanotubes is on cathode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520032295 CN2879415Y (en) | 2005-10-18 | 2005-10-18 | Flat plate display with cathode regulating resistance structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520032295 CN2879415Y (en) | 2005-10-18 | 2005-10-18 | Flat plate display with cathode regulating resistance structure |
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| Publication Number | Publication Date |
|---|---|
| CN2879415Y true CN2879415Y (en) | 2007-03-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520032295 Expired - Lifetime CN2879415Y (en) | 2005-10-18 | 2005-10-18 | Flat plate display with cathode regulating resistance structure |
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| CN (1) | CN2879415Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786056A (en) * | 2018-12-14 | 2019-05-21 | 西安交通大学 | A kind of low inductance large capacity adjustable resistor unit and device |
-
2005
- 2005-10-18 CN CN 200520032295 patent/CN2879415Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786056A (en) * | 2018-12-14 | 2019-05-21 | 西安交通大学 | A kind of low inductance large capacity adjustable resistor unit and device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20090513 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |