CN100429738C - Plane display with VMOS cathode structure and manufacturing technology - Google Patents
Plane display with VMOS cathode structure and manufacturing technology Download PDFInfo
- Publication number
- CN100429738C CN100429738C CNB2005101256321A CN200510125632A CN100429738C CN 100429738 C CN100429738 C CN 100429738C CN B2005101256321 A CNB2005101256321 A CN B2005101256321A CN 200510125632 A CN200510125632 A CN 200510125632A CN 100429738 C CN100429738 C CN 100429738C
- Authority
- CN
- China
- Prior art keywords
- cathode
- layer
- silicon layer
- vmos
- type doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to the device manufacture of a plane field emission display of a carbon nanotube cathode, particularly to the plane field emission display with a VMOS cathode structure and manufacture technology thereof. A flat plate light emitting display with a VMOS cathode structure comprises a sealed vacuum cavity which is composed of a cathode glass panel, an anode glass panel and a surrounding glass enclosure frame, an anode electrode layer arranged on the anode glass panel, a fluorescent powder layer printed on the anode electrode layer, a control grid used for controlling electron emission of carbon nanotubes, a printed carbon nanotube cathode arranged on the cathode glass panel, a VMOS cathode structure, a supporting wall structure and a getter accessory component. The VMOS cathode structure is manufactured to be used for adjusting current value in the cathode electrode layer, and thereby, the voltage of the carbon nanotube cathode is adjusted to be convenient to ensure that the carbon nanotube can uniformly and stably to emit a great amount of electrons. The present invention has the advantages of stable and reliable manufacture process, simple manufacture technology, low manufacture cost and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, microelectronics science and technology field, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to the manufacture craft that has the field emission flat panel display device VMOS cathode construction, carbon nanotube cathod.
Background technology
Carbon nano-tube has unique geometric shape, little tip curvature radius, and high mechanical strength under the effect of extra electric field, can be launched a large amount of electronics, is a kind of comparatively desirable cold cathode manufacturing materials.For the field emission flat-panel display that utilizes carbon nano-tube as cathode material, picture quality is to weigh device to be made into one of merit whether key technical index.And realize a large amount of electronics of emission that carbon nano-tube can be even, stable, this is the prerequisite that shows good image.In the preparation process of carbon nanotube cathod, be subjected to the influence of many factors.From preparation method's angle, what great majority adopted all is grafting, in the process of transplanting, is subjected to influence of various factors such as manufacture craft, baking process, making slurry like this, and the ability of its field emitted electron has descended many; Angle from cathode resistor, owing to need additionally making negative electrode layer below carbon nanotube cathod, can successfully be applied on the carbon nanotube cathod so that guarantee external voltage, yet, the variation of resistance in the negative electrode layer also just greatly affects the voltage swing that is applied on the carbon nano-tube; Angle from carbon nanotube cathod adhesive force, this also is the problem of a significant, if the adhesive force between carbon nanotube cathod and the base substrate is not too good, when adding highfield so outside, carbon nano-tube splits away off from substrate extremely easily, causes the permanent damage of display device; Or the like, so how to take practicable effective measures, can allow large-area carbon nanotube cathod realize even, the stable a large amount of electronics of emission, this is the realistic problem that the researcher ponders deeply.
The influencing factor that the resistance of carbon nanotube cathod electrode layer changes is more outstanding.Size of current in the middle of negative electrode layer is inequality on the one hand, if the electric current on the so at a time a certain direction increases suddenly, will cause the puncture of resistive layer on direction, form components from being damaged, guarantee that so how cathode current can flow in the middle of resistive layer uniformly, this also is a urgent problem; On the other hand, the field emission ability of different carbon nanotube cathods is not quite similar, the carbon nanotube cathod that has is subjected to the smaller of extraneous factor interference, its field emission ability strengthens to some extent, the brightness of its pairing pixel will increase so, if and the carbon nano-tube factor is subjected to the bigger of extraneous factor interference, its field emission ability weakens to some extent, the brightness of its pairing pixel will weaken so, so how can guarantee voltage on the carbon nanotube cathod by the adjusting of cathodic electricity resistance layer, that is to say, regulate voltage swing on the different carbon nanotube cathods by the cathodic electricity resistance layer, guarantee that carbon nanotube cathod has enough field emission abilities, this is the realistic problem that needs solve.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of flat device; When can carrying out large-area element manufacturing, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel display device that has the VMOS cathode construction and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: the flat-plate luminous display that has the VMOS cathode construction among the present invention mainly includes following part: by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode electrode layer is arranged on the anode glass panel and be printed on phosphor powder layer on the anode electrode layer; The control grid that is used for the emission of controlling carbon nanotube electronics; Carbon nanotube cathod and VMOS cathode construction that printing is arranged on cathode glass faceplate; Supporting wall structure and getter subsidiary component thereof.It is characterized in that having made the VMOS cathode construction, be used for regulating the current value of negative electrode layer, and then regulate the voltage on the carbon nanotube cathod, so that guarantee a large amount of electronics of emission that carbon nano-tube can be uniform and stable.
The fixed position of the VMOS cathode construction among the present invention is for being fixed on the cathode glass faceplate; The base material of VMOS cathode construction be large-scale, have quite good thermal endurance and an operability, that can independently make, with low cost High Performance Insulation material; The base material of the VMOS cathode construction among the present invention is a glass, as soda-lime glass, and Pyrex; Have a metal level on the cathode glass faceplate of the VMOS cathode construction among the present invention, metal level presents down " V " font structure, point upward; The metal level of VMOS cathode construction can be nickel, chromium, molybdenum, aluminium, gold, silver metal; Be covered with an insulating barrier above the metal level of the VMOS cathode construction among the present invention; The insulating barrier of VMOS cathode construction structure can be silicon dioxide layer, insulation paste layer, polyimide layer; Exist a n type heavy doping silicon layer above the insulating barrier of VMOS cathode construction; N type heavy doping silicon layer above the insulating barrier of VMOS cathode construction is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; Exist a p type doped silicon layer above the n type heavy doping silicon layer of VMOS cathode construction; P type doped silicon layer in the VMOS cathode construction is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; The n type heavy doping silicon layer in the VMOS cathode construction among the present invention and the height sum of p type doped silicon layer also must not be higher than down " V " font height; Exist a n type doped silicon layer above the p type doped silicon layer in the VMOS cathode construction among the present invention, it is positioned at down the both sides and the top of " V " font structure, and height will be higher than down " V " font structure; There is the metallic cathode electrode layer above the n type doped silicon layer of VMOS cathode construction; Metallic cathode electrode layer in the VMOS cathode construction can be nickel, molybdenum, chromium, aluminum metal; Carbon nano-tube in the VMOS cathode construction just prepares on the metallic cathode electrode layer.
VMOS cathode construction among the present invention comprises cathode glass faceplate, metal level, insulating barrier, n type heavy doping silicon layer, p type doped silicon layer, n type doped silicon layer, cathode electrode layer segment, and adopts following technology to make:
1, the making of cathode glass faceplate
The dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2, the making of metal level
Preparation one deck chromium layer on cathode glass faceplate; In conjunction with conventional photoetching process, the chromium layer is carried out etching, form metal level; Chromium layer mid portion after the requirement etching will form " V " font structure, and the tip is cathode glass faceplate dorsad; This chromium layer connects by the chromium metal lead wire;
3, the making of insulating barrier
Covering layer of silicon dioxide on metal level; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove redundance, form insulating barrier; Require insulating barrier will cover metal level fully;
4, the making of n type heavy doping silicon layer
Preparation one deck n type heavy doping silicon layer on insulating barrier; Require n type heavy doping silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font;
5, the making of p type doped silicon layer
Preparation one deck p type doped silicon layer on n type heavy doping silicon layer; Require p type doped silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height;
6, the making of n type doped silicon layer
Preparation one deck n type doped silicon layer on p type doped silicon layer; Require n type doped silicon layer to be positioned at down the both sides and the top of " V " font structure, height will be higher than down " V " font structure; Cover down the remainder of " V " font structure;
7, the making of negative electrode layer
On n type doped silicon layer, produce one deck chromium metal; In conjunction with conventional photoetching process, the chromium metal level is carried out etching, form negative electrode layer;
8, the clean on VMOS cathode construction surface
Need carry out clean to the surface of VMOS cathode construction, remove dust and impurity.
The manufacture craft of flat-plate luminous display that has the VMOS cathode construction among the present invention is as follows:
1, the making of dielectric isolation layer
Preparation layer of silicon dioxide layer on cathode glass faceplate; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove unnecessary part, form dielectric isolation layer;
2, the making of control gate bar
In conjunction with coating machine, evaporation one deck chromium metal on dielectric isolation layer; In conjunction with conventional photoetching process, the chromium metal level of evaporation is carried out etching, remove unnecessary part, form the control gate bar;
3, the printing of carbon nanotube cathod
In conjunction with silk-screen printing technique, carbon nano-tube is printed on the negative electrode layer above the cathode glass faceplate, be formed for the carbon nanotube cathod of emitting electrons;
4, the reprocessing of carbon nanotube cathod
Carbon nanotube cathod after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nano-tube.
5, the making of anode glass panel
Whole sodium calcium plate glass is carried out cutting, produce the anode glass panel;
6, the making of anode electrode layer
Evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
7, the making of insulation paste layer
In conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
8, the making of phosphor powder layer
In conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
9, device assembling
Cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
4, finished product is made
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Main characteristics among the present invention are to have made the VMOS cathode construction, and have made and have the field emission flat light-emitting display device VMOS cathode construction, carbon nanotube cathod.It is characterized in that having made the VMOS cathode construction, be used for regulating the current value of negative electrode layer, and then regulate the voltage on the carbon nanotube cathod, so that guarantee a large amount of electronics of emission that carbon nano-tube can be uniform and stable.
One, in the VMOS cathode construction in the present invention, metal level wherein [2] serves as the gate pole in the VMOS structure, n type heavy doping silicon layer [4] serves as the source electrode in the VMOS structure, p type doped silicon layer [5] serves as the channel region place layer in the VMOS structure, n type doped silicon layer [6] serves as the drain electrode in the VMOS structure, and carbon nano-tube is with regard to above the negative electrode layer of preparation on be positioned at drain electrode.When applying on source electrode and the gate pole under the voltage condition, in p type doped silicon layer, will form raceway groove, the voltage that is applied to like this on the source electrode just is delivered in the drain electrode by raceway groove, that is to say to be applied on the carbon nanotube cathod.Utilize this VMOS cathode construction, just can regulate current of cathode, thus the voltage swing of change carbon nanotube cathod, so that guarantee a large amount of electronics of emission that carbon nano-tube can be uniform and stable; In VMOS cathode construction of the present invention, because metal level [2] has been made into " V " font structure, formed raceway groove almost is vertical conducting channel in p type doped silicon layer like this, not only can solve the heat dissipation problem of VMOS structure so effectively, avoid the damage of cathode construction, flow through but also can allow bigger electric current, thereby guarantee the high-power realization of display device, also guaranteed the anti-current ability of carbon nanotube cathod;
Its two, in the VMOS cathode construction in the present invention, utilize at the formed raceway groove of p type doped silicon layer, external voltage can be delivered on the carbon nanotube cathod, also just can regulate the voltage on the carbon nanotube cathod.Excessive when the electric current on a certain pixel, when pixel brightness is too high, just can weaken the voltage that is applied on the carbon nanotube cathod, reached the effect that reduces the carbon nano-tube emission current; Too small when the electric current of a certain pixel, when pixel brightness is low excessively, similar with the previous case, also can allow be applied on the carbon nanotube cathod voltage all increase, thereby can improve the quantity of carbon nano-tube emitting electrons, the brightness of corresponding pixel also will strengthen.Like this, by regulating the different pixels point field emission ability of carbon nanotube cathod down, reaching the whole carbon nanotube cathod of realization can be evenly, stablize the target of emitting electrons, thereby realizes high-quality image quality.
They are three years old, in the VMOS cathode construction in the present invention, on n type doped silicon layer, also made negative electrode layer, promptly prepared the chromium metal level, its purpose utilizes the chromium metal electrode as transition zone exactly, make and the good electricity contact of formation between carbon nanotube cathod and the doped silicon layer make applied voltage successfully to be applied on the carbon nanotube cathod.
In addition, in the manufacturing process of VMOS cathode construction in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, the cost of manufacture that this has just further reduced whole flat-panel display device to a great extent helps carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of VMOS cathode construction.
Fig. 2 has provided the transversary schematic diagram of VMOS cathode construction.
Provided the structural representation of the embodiment of a carbon nanotube cathod field emission flat-panel screens that has a VMOS cathode construction among Fig. 3.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
VMOS cathode construction among the present invention comprises cathode glass faceplate 1, metal level 2, insulating barrier 3, n type heavy doping silicon layer [4], p type doped silicon layer [5], n type doped silicon layer [6], negative electrode layer [7] part, and adopts following technology to make:
1, the making of cathode glass faceplate [1]
The dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate [1];
2, the making of metal level [2]
Preparation one deck chromium layer on cathode glass faceplate; In conjunction with conventional photoetching process, the chromium layer is carried out etching, form metal level [2]; Chromium layer mid portion after the requirement etching will form " V " font structure, and the tip is cathode glass faceplate dorsad; This chromium layer connects by the chromium metal lead wire;
3, the making of insulating barrier [3]
Covering layer of silicon dioxide on metal level [2]; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove redundance, form insulating barrier [3]; Require insulating barrier will cover metal level [2] fully;
4, the making of n type heavy doping silicon layer [4]
Preparation one deck n type heavy doping silicon layer [4] on insulating barrier [3]; Require n type heavy doping silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font;
5, the making of p type doped silicon layer [5]
Preparation one deck p type doped silicon layer [5] on n type heavy doping silicon layer [4]; Require p type doped silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height;
6, the making of n type doped silicon layer [6]
Preparation one deck n type doped silicon layer [6] on p type doped silicon layer [5]; Require n type doped silicon layer to be positioned at down the both sides and the top of " V " font structure, height will be higher than down " V " font structure; Cover down the remainder of " V " font structure;
7, the making of negative electrode layer [7]
On n type doped silicon layer [6], produce one deck chromium metal; In conjunction with conventional photoetching process, the chromium metal level is carried out etching, form negative electrode layer [7];
8, the clean on VMOS cathode construction surface
Need carry out clean to the surface of VMOS cathode construction, remove dust and impurity.
The manufacture craft of flat-plate luminous display that has the VMOS cathode construction among the present invention is as follows:
1, the making of dielectric isolation layer [8]
Preparation layer of silicon dioxide layer on cathode glass faceplate; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove unnecessary part, form dielectric isolation layer [8];
2, the making of control gate bar [9]
In conjunction with coating machine, evaporation one deck chromium metal on dielectric isolation layer [8]; In conjunction with conventional photoetching process, the chromium metal level of evaporation is carried out etching, remove unnecessary part, form control gate bar [9];
3, the printing of carbon nanotube cathod [10]
In conjunction with silk-screen printing technique, carbon nano-tube [10] is printed on the top negative electrode layer [7] of cathode glass faceplate [1], be formed for carbon nano-tube [10] negative electrode of emitting electrons;
4, the reprocessing of carbon nano-tube [10] negative electrode
Carbon nano-tube [10] negative electrode after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nano-tube.
5, the making of anode glass panel [11]
Whole sodium calcium plate glass is carried out cutting, produce the anode glass panel;
6, the making of anode electrode layer [12]
Evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer [12];
7, the making of insulation paste layer [13]
In conjunction with silk-screen printing technique, non-display area printing insulation paste [13] layer at anode electrode layer [12] is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
8, the making of fluorescent material [14] layer
In conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer [14] on anode electrode layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
9, device assembling
Cathode glass faceplate [1], anode glass panel [11], knee wall [16] structural glass are enclosed frame [17] be assembled together, and getter [15] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
4, finished product is made
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (7)
1, a kind of flat-plate luminous display that has the VMOS cathode construction, comprise by cathode glass faceplate [1], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [17] constitutes, be arranged on the anode electrode layer [12] on the anode glass panel [11] and be printed on phosphor powder layer [14] on the anode electrode layer, the control grid [9] that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod [10] that printing is arranged on cathode glass faceplate [1], supporting wall structure [16] and getter [15] subsidiary component thereof, it is characterized in that: cathode glass faceplate [1] is provided with the current value that is used for regulating negative electrode layer, and then the voltage on the adjusting carbon nanotube cathod, so that guarantee the VMOS cathode construction of the electronics that emission that carbon nano-tube can be uniform and stable is a large amount of.
2, the flat-plate luminous display that has the VMOS cathode construction as claimed in claim 1, it is characterized in that: described VMOS cathode construction comprises cathode glass faceplate [1], is arranged on the metal level [2] on the cathode glass faceplate [1], metal level presents down " V " font structure, point upward; On metal level, be covered with an insulating barrier [3], on insulating barrier, exist a n type heavy doping silicon layer [4]; N type heavy doping silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; Exist a p type doped silicon layer [5] above the n type heavy doping silicon layer; P type doped silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height; Exist a n type doped silicon layer [6] above the p type doped silicon layer, it is positioned at down the both sides and the top of " V " font structure, and height will be higher than down " V " font structure; Have negative electrode layer [7] above the n type doped silicon layer, made of carbon nanotubes is on negative electrode layer.
3, the flat-plate luminous display that has the VMOS cathode construction as claimed in claim 2, it is characterized in that: negative electrode layer is one of nickel, molybdenum, chromium, aluminum metal.
4, the flat-plate luminous display that has the VMOS cathode construction as claimed in claim 1, it is characterized in that: the fixed position of described VMOS cathode construction is for being fixed on the cathode glass faceplate, and the base material of cathode glass faceplate is soda-lime glass or Pyrex.
5, the flat-plate luminous display that has the VMOS cathode construction as claimed in claim 2 is characterized in that: described VMOS cathode construction metal level [2] is one of nickel, chromium, molybdenum, aluminium, gold, silver metal.
6, the flat-plate luminous display that has the VMOS cathode construction as claimed in claim 2 is characterized in that: the insulating barrier of described VMOS cathode construction is silicon dioxide layer, insulation paste layer or polyimide layer.
7, a kind of manufacture craft that has the flat-plate luminous display of VMOS cathode construction, comprise making and the assembling of each device and the finished product making of dielectric isolation layer, control gate bar, carbon nanotube cathod, anode glass panel, anode electrode layer, insulation paste layer, it is characterized in that:
The VMOS cathode construction comprises cathode glass faceplate [1], metal level [2], insulating barrier [3], n type heavy doping silicon layer [4], p type doped silicon layer [5], n type doped silicon layer [6], negative electrode layer [7] part, and adopts following technology to make:
1), the making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate [1];
2), the making of metal level [2]: preparation one deck chromium layer on cathode glass faceplate; In conjunction with conventional photoetching process, the chromium layer is carried out etching, form metal level [2]; Chromium layer mid portion after the requirement etching will form " V " font structure, and the tip is cathode glass faceplate dorsad; This chromium layer connects by the chromium metal lead wire;
3), the making of insulating barrier [3]: covering layer of silicon dioxide on metal level [2]; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove redundance, form insulating barrier [3]; Require insulating barrier will cover metal level [2] fully;
4), the making of n type heavy doping silicon layer [4]: preparation one deck n type heavy doping silicon layer [4] on insulating barrier [3]; Require n type heavy doping silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font;
5), the making of p type doped silicon layer [5]: preparation one deck p type doped silicon layer [5] on n type heavy doping silicon layer [4]; Require p type doped silicon layer to be positioned at down the both sides of " V " font structure, its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height;
6), the making of n type doped silicon layer [6]: preparation one deck n type doped silicon layer [6] on p type doped silicon layer [5]; Require n type doped silicon layer to be positioned at down the both sides and the top of " V " font structure, height will be higher than down " V " font structure; Cover down the remainder of " V " font structure;
7), the making of negative electrode layer [7]: on n type doped silicon layer [6], produce one deck chromium metal; In conjunction with conventional photoetching process, the chromium metal level is carried out etching, form negative electrode layer [7];
8), the clean on VMOS cathode construction surface: need carry out clean to the surface of VMOS cathode construction, remove dust and impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101256321A CN100429738C (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure and manufacturing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101256321A CN100429738C (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure and manufacturing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1776881A CN1776881A (en) | 2006-05-24 |
| CN100429738C true CN100429738C (en) | 2008-10-29 |
Family
ID=36766298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101256321A Expired - Fee Related CN100429738C (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure and manufacturing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100429738C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4503449A (en) * | 1981-09-14 | 1985-03-05 | U.S. Philips Corporation | V-Mos field effect transistor |
| CN1547236A (en) * | 2003-12-17 | 2004-11-17 | 中国科学院上海微系统与信息技术研究 | Transistor controlled nanometer tube field emission display array and method for implementing same |
| US20050067938A1 (en) * | 2003-09-30 | 2005-03-31 | Industrial Technology Research Institute | Carbon nano-tube field emission display having strip shaped gate |
| CN2904284Y (en) * | 2005-12-02 | 2007-05-23 | 中原工学院 | Plane display with VMOS cathode structure |
-
2005
- 2005-12-02 CN CNB2005101256321A patent/CN100429738C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4503449A (en) * | 1981-09-14 | 1985-03-05 | U.S. Philips Corporation | V-Mos field effect transistor |
| US20050067938A1 (en) * | 2003-09-30 | 2005-03-31 | Industrial Technology Research Institute | Carbon nano-tube field emission display having strip shaped gate |
| CN1547236A (en) * | 2003-12-17 | 2004-11-17 | 中国科学院上海微系统与信息技术研究 | Transistor controlled nanometer tube field emission display array and method for implementing same |
| CN2904284Y (en) * | 2005-12-02 | 2007-05-23 | 中原工学院 | Plane display with VMOS cathode structure |
Non-Patent Citations (2)
| Title |
|---|
| 碳纳米管场发射显示屏栅极工艺的研究. 李玉魁，朱长纯.西安科技大学学报，第24卷第3期. 2004 |
| 碳纳米管场发射显示屏栅极工艺的研究. 李玉魁，朱长纯. 西安科技大学学报，第24卷第3期. 2004 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1776881A (en) | 2006-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100580861C (en) | Flat panel display with bevelled grid controlled cathode structure in truncated cone form, and fabricating technique thereof | |
| CN100446165C (en) | Panel display with integrated triangle tapered grid cathode structure and its making process | |
| CN1956129B (en) | Flat display of circular table cone structure cathode array emission structure and manufacturing process | |
| CN100555540C (en) | The flat-panel monitor of bent grid case acuate type array emitting structural and manufacture craft thereof | |
| CN100527336C (en) | Flat-panel display device with igh gate-modulated multi-arris cathode structure and its preparing process | |
| CN100429738C (en) | Plane display with VMOS cathode structure and manufacturing technology | |
| CN100487849C (en) | Transversing cathode emitting structural panel display device and its production technique | |
| CN100555536C (en) | The flat-panel monitor of globular cactus type tip cathode array structural and manufacture craft thereof | |
| CN2904284Y (en) | Plane display with VMOS cathode structure | |
| CN100527319C (en) | Flat panel display with integrated double flat grid array structure and its producing process | |
| CN100527331C (en) | Intersection type cathode adjusting structural panel display device and its production technique | |
| CN100555535C (en) | The flat-panel monitor and the manufacture craft thereof that have knot type field effect tube cathodic control array structure | |
| CN100527339C (en) | Planar display device with capped bottom-grid controlled cathode structure and its production | |
| CN1956125B (en) | Flat display of triangular cone shape cathode array structure and its manufacturing technology | |
| CN1956126B (en) | Flat display of multi-cathode side grid control structure and its manufacturing process | |
| CN100487845C (en) | Plate display having anode regulating resistance structure and its manufacturing technology | |
| CN1953130B (en) | Flat active display with goniometric ballast structure and manufacturing technique thereof | |
| CN100595866C (en) | Flat-board display of flat-convex type cathode array structure and manufacturing process | |
| CN100561642C (en) | The flat-panel monitor and the manufacture craft thereof that have double-grid emitter cathode controlling structure | |
| CN100555528C (en) | The flat-panel monitor and the manufacture craft thereof of umbrella shape grid array structure | |
| CN101071742A (en) | Flat-panel display device with branched side-bottom gate modulation structure and its preparing process | |
| CN1971831B (en) | Hackle sidegrid-controlled structure panel display and its manufacturing method | |
| CN100580860C (en) | Planar display device with positioning dimple cathode array structure and producing technology thereof | |
| CN100555538C (en) | The flat-panel monitor of annular blade type cathode emitting structural and manufacture craft thereof | |
| CN2904281Y (en) | Plane display with grid emitting body cathode control structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081029 Termination date: 20100104 |