CN2904284Y - Plane display with VMOS cathode structure - Google Patents
Plane display with VMOS cathode structure Download PDFInfo
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- CN2904284Y CN2904284Y CN 200520142405 CN200520142405U CN2904284Y CN 2904284 Y CN2904284 Y CN 2904284Y CN 200520142405 CN200520142405 CN 200520142405 CN 200520142405 U CN200520142405 U CN 200520142405U CN 2904284 Y CN2904284 Y CN 2904284Y
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Abstract
The utility model relates to a preparation of flat-panel field-emission displays (FED) with a carbon nanotube (CNT) cathode, in particular VMOS cathode structured one., which comprises a air-proof vacuum chamber (comprising a piece of cathode cover glass, a piece of anode cover glass, and a peripheral glass frame), an anode's electrode layer positioned on the anode cover glass, a phosphor powder layer printed on the anode's electrode layer, a control grid used to control electron emission from a CNT, a CNT cathode printed the cathode cover glass, a supporting wall structure and a getter as the auxiliary element. Positioned on the cathode cover glass is a VMOS cathode structure used to adjust the current within the cathode's electrode layer and then the voltage on the CNT cathode in order to guarantee the uniform and stable electron emission from the CNT. The utility model has such advantages as stable and reliable preparation, a simple manufacturing process, a low production cost, a simple structure, etc.
Description
Technical field
The utility model belongs to the mutual crossing domain in Display Technique field, plane, microelectronics science and technology field, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to and have the field emission flat panel display device VMOS cathode construction, carbon nanotube cathod.
Background technology
Carbon nano-tube has unique geometric shape, little tip curvature radius, and high mechanical strength under the effect of extra electric field, can be launched a large amount of electronics, is a kind of comparatively desirable cold cathode manufacturing materials.For the field emission flat-panel display that utilizes carbon nano-tube as cathode material, picture quality is to weigh device to be made into one of merit whether key technical index.And realize a large amount of electronics of emission that carbon nano-tube can be even, stable, this is the prerequisite that shows good image.In the preparation process of carbon nanotube cathod, be subjected to the influence of many factors.From preparation method's angle, what great majority adopted all is grafting, in the process of transplanting, is subjected to influence of various factors such as manufacture craft, baking process, making slurry like this, and the ability of its field emitted electron has descended many; Angle from cathode resistor, owing to need additionally making negative electrode layer below carbon nanotube cathod, can successfully be applied on the carbon nanotube cathod so that guarantee external voltage, yet, the variation of resistance in the negative electrode layer also just greatly affects the voltage swing that is applied on the carbon nano-tube; Angle from carbon nanotube cathod adhesive force, this also is the problem of a significant, if the adhesive force between carbon nanotube cathod and the base substrate is not too good, when adding highfield so outside, carbon nano-tube splits away off from substrate extremely easily, causes the permanent damage of display device; Or the like, so how to take practicable effective measures, can allow large-area carbon nanotube cathod realize even, the stable a large amount of electronics of emission, this is the realistic problem that the researcher ponders deeply.
The influencing factor that the resistance of carbon nanotube cathod electrode layer changes is more outstanding.Size of current in the middle of negative electrode layer is inequality on the one hand, if the electric current on the so at a time a certain direction increases suddenly, will cause the puncture of resistive layer on direction, form components from being damaged, guarantee that so how cathode current can flow in the middle of resistive layer uniformly, this also is a urgent problem; On the other hand, the field emission ability of different carbon nanotube cathods is not quite similar, the carbon nanotube cathod that has is subjected to the smaller of extraneous factor interference, its field emission ability strengthens to some extent, the brightness of its pairing pixel will increase so, if and the carbon nano-tube factor is subjected to the bigger of extraneous factor interference, its field emission ability weakens to some extent, the brightness of its pairing pixel will weaken so, so how can guarantee voltage on the carbon nanotube cathod by the adjusting of cathodic electricity resistance layer, that is to say, regulate voltage swing on the different carbon nanotube cathods by the cathodic electricity resistance layer, guarantee that carbon nanotube cathod has enough field emission abilities, this is the realistic problem that needs solve.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of flat device; When can carrying out large-area element manufacturing, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The purpose of this utility model be to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel display device that has the VMOS cathode construction simple in structure.
The purpose of this utility model is achieved in that and comprises by cathode glass faceplate, the anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes, be arranged on the anode electrode layer on the anode glass panel and be printed on phosphor powder layer on the anode electrode layer, the control grid that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod that printing is arranged on cathode glass faceplate, supporting wall structure and getter subsidiary component thereof, cathode glass faceplate is provided with the current value that is used for regulating negative electrode layer, and then the voltage on the adjusting carbon nanotube cathod, so that guarantee the VMOS cathode construction of the electronics that emission that carbon nano-tube can be uniform and stable is a large amount of.
Described VMOS cathode construction comprises cathode glass faceplate, is arranged on the metal level on the cathode glass faceplate, and metal level presents down " V " font structure, point upward; On metal level, be covered with an insulating barrier, on insulating barrier, exist a n type heavy doping silicon layer; N type heavy doping silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; Exist a p type doped silicon layer above the n type heavy doping silicon layer; P type doped silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height; Exist a n type doped silicon layer above the p type doped silicon layer, it is positioned at down the both sides and the top of " V " font structure, and height will be higher than down " V " font structure; Have negative electrode layer [7] above the n type doped silicon layer, made of carbon nanotubes is on negative electrode layer.
Negative electrode layer can be nickel, molybdenum, chromium, aluminum metal.The fixed position of described VMOS cathode construction is for being fixed on the cathode glass faceplate, and base material is a glass, as soda-lime glass, and Pyrex.The metal level of described VMOS cathode construction [2] can be nickel, chromium, molybdenum, aluminium, gold, silver metal.The insulating barrier of described VMOS cathode construction can be silicon dioxide layer, insulation paste layer, polyimide layer.
The utlity model has following good effect:
Main characteristics in the utility model are to have made the VMOS cathode construction, and have made and have the field emission flat light-emitting display device VMOS cathode construction, carbon nanotube cathod.It is characterized in that having made the VMOS cathode construction, be used for regulating the current value of negative electrode layer, and then regulate the voltage on the carbon nanotube cathod, so that guarantee a large amount of electronics of emission that carbon nano-tube can be uniform and stable.
One, in the VMOS cathode construction in the utility model, metal level wherein [2] serves as the gate pole in the VMOS structure, n type heavy doping silicon layer [4] serves as the source electrode in the VMOS structure, p type doped silicon layer [5] serves as the channel region place layer in the VMOS structure, n type doped silicon layer [6] serves as the drain electrode in the VMOS structure, and carbon nano-tube is with regard to above the negative electrode layer of preparation on be positioned at drain electrode.When applying on source electrode and the gate pole under the voltage condition, in p type doped silicon layer, will form raceway groove, the voltage that is applied to like this on the source electrode just is delivered in the drain electrode by raceway groove, that is to say to be applied on the carbon nanotube cathod.Utilize this VMOS cathode construction, just can regulate current of cathode, thus the voltage swing of change carbon nanotube cathod, so that guarantee a large amount of electronics of emission that carbon nano-tube can be uniform and stable; In VMOS cathode construction of the present invention, because metal level [2] has been made into " V " font structure, formed raceway groove almost is vertical conducting channel in p type doped silicon layer like this, not only can solve the heat dissipation problem of VMOS structure so effectively, avoid the damage of cathode construction, flow through but also can allow bigger electric current, thereby guarantee the high-power realization of display device, also guaranteed the anti-current ability of carbon nanotube cathod;
Its two, in the VMOS cathode construction in the utility model, utilize at the formed raceway groove of p type doped silicon layer, external voltage can be delivered on the carbon nanotube cathod, also just can regulate the voltage on the carbon nanotube cathod.Excessive when the electric current on a certain pixel, when pixel brightness is too high, just can weaken the voltage that is applied on the carbon nanotube cathod, reached the effect that reduces the carbon nano-tube emission current; Too small when the electric current of a certain pixel, when pixel brightness is low excessively, similar with the previous case, also can allow be applied on the carbon nanotube cathod voltage all increase, thereby can improve the quantity of carbon nano-tube emitting electrons, the brightness of corresponding pixel also will strengthen.Like this, by regulating the different pixels point field emission ability of carbon nanotube cathod down, reaching the whole carbon nanotube cathod of realization can be evenly, stablize the target of emitting electrons, thereby realizes high-quality image quality.
They are three years old, in the VMOS cathode construction in the utility model, on n type doped silicon layer, also made negative electrode layer, promptly prepared the chromium metal level, its purpose utilizes the chromium metal electrode as transition zone exactly, make and the good electricity contact of formation between carbon nanotube cathod and the doped silicon layer make applied voltage successfully to be applied on the carbon nanotube cathod.
In addition, in the manufacturing process of the VMOS cathode construction in the utility model, do not adopt special structure fabrication material, do not adopt special device making technics yet, the cost of manufacture that this has just further reduced whole flat-panel display device to a great extent helps carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of VMOS cathode construction.
Fig. 2 has provided the transversary schematic diagram of VMOS cathode construction.
Provided the structural representation of the embodiment of a carbon nanotube cathod field emission flat-panel screens that has a VMOS cathode construction among Fig. 3.
Embodiment
As Fig. 1,2, shown in 3, the utility model comprises by cathode glass faceplate 1, anode glass panel 11 and all around glass enclose the sealed vacuum chamber that frame 17 constitutes, be arranged on the anode electrode layer 12 on the anode glass panel 11 and be printed on phosphor powder layer 14 on the anode electrode layer, the control grid 9 that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod 10 that printing is arranged on cathode glass faceplate 1, insulation paste layer 13 in the printing of the non-display area of anode electrode layer 12, supporting wall structure 16 and getter subsidiary component 15 thereof, cathode glass faceplate 1 is provided with the current value that is used for regulating negative electrode layer, and then the voltage on the adjusting carbon nanotube cathod, so that guarantee the VMOS cathode construction of the electronics that emission that carbon nano-tube can be uniform and stable is a large amount of.
Described VMOS cathode construction comprises cathode glass faceplate 1, is arranged on the metal level 2 on the cathode glass faceplate 1, and metal level presents down " V " font structure, point upward; On metal level, be covered with an insulating barrier 3, on insulating barrier, exist a n type heavy doping silicon layer 4; N type heavy doping silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; Exist a p type doped silicon layer 5 above the n type heavy doping silicon layer; P type doped silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height; Exist a n type doped silicon layer 6 above the p type doped silicon layer, it is positioned at down the both sides and the top of " V " font structure, and height will be higher than down " V " font structure; Have negative electrode layer 7 above the n type doped silicon layer, made of carbon nanotubes is on negative electrode layer.
Preparation layer of silicon dioxide layer on cathode glass faceplate; In conjunction with conventional photoetching process, silicon dioxide layer is carried out etching, remove unnecessary part, form dielectric isolation layer 8; In conjunction with coating machine, evaporation one deck chromium metal on dielectric isolation layer 8; In conjunction with conventional photoetching process, the chromium metal level of evaporation is carried out etching, remove unnecessary part, be formed for the control grid 9 of controlling carbon nanotube electronics emission.
Negative electrode layer can be nickel, molybdenum, chromium, aluminum metal.The fixed position of described VMOS cathode construction is for being fixed on the cathode glass faceplate, and base material is a glass, as soda-lime glass, and Pyrex.The metal level 2 of described VMOS cathode construction can be nickel, chromium, molybdenum, aluminium, gold, silver metal.The insulating barrier of described VMOS cathode construction can be silicon dioxide layer, insulation paste layer, polyimide layer.
Claims (6)
1, a kind of flat-plate luminous display that has the VMOS cathode construction, comprise by cathode glass faceplate [1], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [17] constitutes, be arranged on the anode electrode layer [12] on the anode glass panel [11] and be printed on phosphor powder layer [14] on the anode electrode layer, the control grid [9] that is used for the emission of controlling carbon nanotube electronics, the carbon nanotube cathod [10] that printing is arranged on cathode glass faceplate [1], supporting wall structure [16] and getter subsidiary component [15] thereof, it is characterized in that: cathode glass faceplate [1] is provided with the current value that is used for regulating negative electrode layer, and then the voltage on the adjusting carbon nanotube cathod, so that guarantee the VMOS cathode construction of the electronics that emission that carbon nano-tube can be uniform and stable is a large amount of.
2, a kind of plane field emission display that has the VMOS cathode construction as claimed in claim 1, it is characterized in that: described VMOS cathode construction comprises cathode glass faceplate [1], is arranged on the metal level [2] on the cathode glass faceplate [1], metal level presents down " V " font structure, point upward; On metal level, be covered with an insulating barrier [3], on insulating barrier, exist a n type heavy doping silicon layer [4]; N type heavy doping silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; Exist a p type doped silicon layer [5] above the n type heavy doping silicon layer; P type doped silicon layer is positioned at down the both sides of " V " font structure, and its height must not be higher than down " V " font; The height sum of n type heavy doping silicon layer and p type doped silicon layer also must not be higher than down " V " font height; Exist a n type doped silicon layer [6] above the p type doped silicon layer, it is positioned at down the both sides and the top of " V " font structure, and height will be higher than down " V " font structure; Have negative electrode layer [7] above the n type doped silicon layer, made of carbon nanotubes is on negative electrode layer.
3, a kind of plane field emission display that has the VMOS cathode construction as claimed in claim 2, it is characterized in that: negative electrode layer can be nickel, molybdenum, chromium, aluminum metal.
4, a kind of plane field emission display that has the VMOS cathode construction as claimed in claim 1, it is characterized in that: the fixed position of described VMOS cathode construction is for being fixed on the cathode glass faceplate, base material is a glass, as soda-lime glass, and Pyrex.
5, a kind of plane field emission display that has the VMOS cathode construction as claimed in claim 2 is characterized in that: the metal level of described VMOS cathode construction [2] can be nickel, chromium, molybdenum, aluminium, gold, silver metal.
6, a kind of plane field emission display that has the VMOS cathode construction as claimed in claim 2, it is characterized in that: the insulating barrier of described VMOS cathode construction can be silicon dioxide layer, insulation paste layer, polyimide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520142405 CN2904284Y (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520142405 CN2904284Y (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure |
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| Publication Number | Publication Date |
|---|---|
| CN2904284Y true CN2904284Y (en) | 2007-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520142405 Expired - Lifetime CN2904284Y (en) | 2005-12-02 | 2005-12-02 | Plane display with VMOS cathode structure |
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| Country | Link |
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| CN (1) | CN2904284Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100429738C (en) * | 2005-12-02 | 2008-10-29 | 中原工学院 | Plane display with VMOS cathode structure and manufacturing technology |
-
2005
- 2005-12-02 CN CN 200520142405 patent/CN2904284Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100429738C (en) * | 2005-12-02 | 2008-10-29 | 中原工学院 | Plane display with VMOS cathode structure and manufacturing technology |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20081029 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |