CN2796291Y - Flat plate field emission display of double grid structure - Google Patents
Flat plate field emission display of double grid structure Download PDFInfo
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- CN2796291Y CN2796291Y CN200520030743.XU CN200520030743U CN2796291Y CN 2796291 Y CN2796291 Y CN 2796291Y CN 200520030743 U CN200520030743 U CN 200520030743U CN 2796291 Y CN2796291 Y CN 2796291Y
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Abstract
The utility model relates to a flat plate field emission display with a double grid structure. A flat display comprises a cathode panel, an anode panel and a vacuum chamber composed of a glass frame at the circumference of the vacuum chamber. The anodic panel is provided with a stannum indium oxide film layer and a fluorescent powder layer prepared on the stannum indium oxide film layer, the cathode panel is provided with a carbon nanotube cathode to control the electrical transmission of the carbon nanotube cathode and an insulation isolation supporting wall is positioned in the vacuum chamber. The utility model is characterized in that a bigrid structure is made for controlling the electrical transmission of the carbon nanotube cathode. The utility model has the advantages of simple structure, low cost, simple manufacture technology and stable and reliable manufacture process.
Description
Technical field
The utility model belongs to the mutual interleaving techniques field of plane Display Technique, vacuum science and technology and nanometer science and technology, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the flat-panel monitor of carbon nanotube cathod, particularly a kind of panel field emission display that has the double-grid structure of double-grid structure, carbon nanotube cathod.
Background technology
Carbon nano-tube has unique geometrical property and physical property, has little tip curvature radius, and high mechanical strength can be launched a large amount of electronics under the voltage effect.And for the field-emission plane display that utilizes carbon nano-tube as cold-cathode material, need farthest reduce production costs, reduce the operating voltage of device, so that combine with conventional integrated circuit.
In the middle of dull and stereotyped carbon nano-tube film display screen, grid structure is an indispensable part in the device fabrication processes, and its control characteristic also is one of important performance indexes of weighing flat device.Aspect the grid that utilizes the special isolation material, not only comprise quite complicated manufacture craft, and containing the development and use that new technology is arranged, cause the cost of manufacture of total device very high; For the carbon nano-tube display screen, realize technology element manufacturing simple, reliable and stable, with low cost, also be the precondition that actual product is used.The main selection principle of grid material is: must be applied in the middle of the vacuum environment, and gas output is little under vacuum environment; Must have certain electrical insulation grade, so that control grid part and carbon nanotube cathod part electrical insulation fully mutually under high voltage; Require the base material of control grid and the thermal coefficient of expansion of cathode substrate material to be close, avoid in the process of high temperature sintering encapsulation, bursting phenomenon, or the like.Although each control grid manufacturing materials of making enterprise or research institution's use has nothing in common with each other, but all used special-purpose special facture material mostly, also used simultaneously special manufacture craft, for the material requirements of device than higher, make easily that in the manufacturing process of device carbon nanotube cathod is subjected to certain damage and pollution, this is its disadvantage.In addition,, need reduce the total device cost as much as possible, carry out element manufacturing reliable and stable, with low cost guaranteeing that grid structure has the carbon nanometer tube negative electrode under the prerequisite of good control action.
Summary of the invention
The purpose of this utility model be to overcome the deficiencies in the prior art and provide a kind of have double-grid structure, simple in structure, manufacturing process is reliable and stable, with low cost, the panel field emission display that is made into the high double-grid structure of power.
The purpose of this utility model is achieved in that
The panel field emission display of double-grid structure of the present utility model, comprise by negative electrode panel, anode plate and all around glass enclose sealed vacuum chamber that frame constitutes, at phosphor powder layer, the carbon nanotube cathod that on the negative electrode panel, is provided with on tin indium oxide thin layer of the tin indium oxide thin layer that photoetching is arranged on the anode plate and preparation, be positioned at the inner passive insulation of vacuum chamber and isolate knee wall, above carbon nanotube cathod, be provided with the double-grid structure of the electronics emission of controlling carbon nanotube negative electrode.
Described double-grid structure comprise with glass be backing material the negative electrode panel, be arranged on negative electrode bus and insulating barrier on the negative electrode panel, be provided with grid bus down at insulating barrier, the grid bus is provided with insulating barrier, insulating barrier is provided with the grid bus, and last grid bus is provided with the grid cover layer.Described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, and the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.Bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.Electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
The utlity model has following good effect:
Control grid in the double-grid structure in the utility model is positioned at the top of carbon nanotube cathod, is used for the electronics emission of controlling carbon nanotube negative electrode.When applying appropriate voltage on the control grid when, carbon nanotube cathod will be launched a large amount of electronics.In double-grid structure of the present utility model, can adopt the mutual square crossing mode of grid and following grid to carry out the mode of the matrix addressing of display device pixel, so just greatly reduced requirement to carbon nanotube cathod preparation technology, bigger selection has been arranged on the preparation method of carbon nanotube cathod, both can adopt carbon nano-tube that silk screen print method transplants as cathode material, and also can adopt directly on the large tracts of land substrate carbon nanotubes grown as cathode material; Certainly, also can adopt down the mutual square crossing mode of grid and carbon nanotube cathod to carry out the mode of the matrix addressing of display device pixel, last grid further reduces working voltage of device as the slave part of device.From device demonstration aspect bigger choice has been arranged.In the manufacturing process of double-grid structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplified the manufacturing process of integral display spare, can carry out large-area element manufacturing, help carrying out business-like big production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of double-grid structure.
Fig. 2 has provided the schematic top plan view of the following grid in the double-grid structure.
Fig. 3 has provided the schematic top plan view of the last grid in the double-grid structure.
Fig. 4 has provided the overall schematic top plan view in the double-grid structure.
Fig. 5 has provided the structural representation of the embodiment of a field emission flat-panel screens that has a double-grid structure.
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified, but the utility model is not limited to these embodiment.
As Fig. 1,2,3,4, shown in 5, the panel field emission display of double-grid structure of the present utility model comprises by negative electrode panel 1, anode plate 9 and all around glass enclose the sealed vacuum chamber that frame 14 constitutes, the phosphor powder layer 12 on tin indium oxide thin layer at tin indium oxide thin layer 10 that photoetching is arranged on the anode plate 9 and preparation, the carbon nanotube cathod 8 that on negative electrode panel 1, is provided with, be positioned at the inner passive insulation of vacuum chamber and isolate knee wall 13, above carbon nanotube cathod 8, be provided with the double-grid structure of the electronics emission of controlling carbon nanotube negative electrode.Make double-grid structure, be used for the electronics emission of controlling carbon nanotube negative electrode, greatly reduced requirement, reduced the production cost of integral device, simplify integral device manufacture craft and manufacturing process dielectric isolation layer material between the two.
Described double-grid structure comprise with glass be backing material negative electrode panel 1, be arranged on negative electrode bus 2 and insulating barrier 3 on the negative electrode panel 1, insulating barrier 3 is provided with down grid bus 4, grid bus 4 is provided with insulating barrier 5, insulating barrier 5 is provided with grid bus 6, and last grid bus 6 is provided with grid cover layer 7.
Described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, and the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.Bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.Electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
Claims (5)
1, a kind of panel field emission display of double-grid structure, comprise by negative electrode panel (1), anode plate (9) and all around glass enclose the sealed vacuum chamber that frame (14) constitutes, the phosphor powder layer (12) on tin indium oxide thin layer at tin indium oxide thin layer (10) that photoetching is arranged on the anode plate (9) and preparation, go up the carbon nanotube cathod (8) that is provided with at negative electrode panel (1), be positioned at the inner passive insulation of vacuum chamber and isolate knee wall (13), it is characterized in that: the double-grid structure that is provided with the electronics emission of controlling carbon nanotube negative electrode in carbon nanotube cathod (8) top.
2, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: described double-grid structure comprise with glass be backing material negative electrode panel (1), be arranged on negative electrode bus (2) and insulating barrier (3) on the negative electrode panel (1), insulating barrier (3) is provided with down grid bus (4), grid bus (4) is provided with insulating barrier (5), insulating barrier (5) is provided with grid bus (6), and last grid bus (6) is provided with grid cover layer (7).
3, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.
4, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: the bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.
5, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: the electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200520030743.XU CN2796291Y (en) | 2005-05-24 | 2005-05-24 | Flat plate field emission display of double grid structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200520030743.XU CN2796291Y (en) | 2005-05-24 | 2005-05-24 | Flat plate field emission display of double grid structure |
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| Publication Number | Publication Date |
|---|---|
| CN2796291Y true CN2796291Y (en) | 2006-07-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200520030743.XU Expired - Fee Related CN2796291Y (en) | 2005-05-24 | 2005-05-24 | Flat plate field emission display of double grid structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493080A (en) * | 2018-03-26 | 2018-09-04 | 东南大学 | The Flied emission high-precision double-gate structure and its processing method intercepted and captured for reducing electronics |
-
2005
- 2005-05-24 CN CN200520030743.XU patent/CN2796291Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493080A (en) * | 2018-03-26 | 2018-09-04 | 东南大学 | The Flied emission high-precision double-gate structure and its processing method intercepted and captured for reducing electronics |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |