CN100527321C - Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique - Google Patents
Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique Download PDFInfo
- Publication number
- CN100527321C CN100527321C CNB2006100485031A CN200610048503A CN100527321C CN 100527321 C CN100527321 C CN 100527321C CN B2006100485031 A CNB2006100485031 A CN B2006100485031A CN 200610048503 A CN200610048503 A CN 200610048503A CN 100527321 C CN100527321 C CN 100527321C
- Authority
- CN
- China
- Prior art keywords
- layer
- negative electrode
- grid
- cathode
- increases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The flat panel display includes anodic glass faceplate, cathodal glass faceplate, and sealed vacuum cavity composed of glassed-in frame. On the anodic glass faceplate, there are anodic conductive layer, and phosphor powder prepared on the anodic conductive layer. Structure of back wall and affiliated component of getter are positioned between anodic glass faceplate and cathodal glass faceplate. On the cathodal glass faceplate, there is control grid, cathode of Nano carbon tube, and grid controlled emitter junction in circular ring tip shaped cathode type. The said emitter junction possesses advantages: increasing electron-emitting area of cathode effectively, making the best of edge location to emit mass of electron in order to improve quality of image displayed, stable, reliable and simple manufacturing procedure and technique, and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to a kind of element manufacturing and manufacture craft thereof of flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure.
Background technology
Carbon nano-tube has little tip curvature radius, and high stability physicochemical characteristics and high mechanical strength are very suitable for as Field Emission Cathode Materials.The field emission characteristics of carbon nano-tube is stable, and preparation technology is relatively simple, is easy to produce in enormous quantities in industry.And the flat-panel display device that utilizes carbon nano-tube to make as cathode material is a kind of novel planar device, it is with the high-definition image quality of cathode ray tube, the ultra-thin degree of LCDs and the advantages such as large tracts of land of plasma scope roll into one, it is little to have volume, the brightness height, characteristics such as the big and suitable warm area in visual angle is wide, under the present continuous condition of enlarged of flat panel display market scale, with respect to other display device, carbon nano-tube field emission display device will attract bigger investment, in price, aspect such as performance and manufacturability all has great superior part.
The preparation technology of carbon nano-tube is broadly divided into two kinds, i.e. direct growth preparation and transplanting preparation.The density height of the carbon nano-tube of direct growth preparation, autoelectronic current is big, and the stickup ability is strong, difficult drop-off, and its field emission characteristics is very good, and its shortcoming is exactly that substrate is had strict requirement, and its growth temperature is also than higher.In the middle of the field emission display device of three-stage structure, grid structure plays very necessary control effect for the electronics emission of carbon nano-tube, the control structure type that has all adopted grid to be positioned at the carbon nanotube cathod top in the middle of the most devices is at present, its manufacture craft is fairly simple, but formed grid current is bigger.When after applying appropriate voltage on the grid, carbon nano-tube will be launched a large amount of electronics, but the emitting electrons that not all carbon nanotube cathod can both be uniform and stable, but the marginal position electrons emitted that is positioned at carbon nanotube cathod is maximum, the middle position electrons emitted that is positioned at carbon nanotube cathod is more less, perhaps emitting electrons not.This just unique marginal position is launched a large amount of electronics phenomenons.These phenomenons and the advantage mentioned above so how making full use of are carried out better element manufacturing, simplify device making technics, reduce device cost, and this is a realistic problem that needs solution.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of whole flat-panel display device; When can carrying out the making of large area display spare, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel monitor that has the grid-control circular ring, tip shaped cathode type emission structure and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component.Control grid, carbon nanotube cathod and grid-control circular ring, tip shaped cathode type emission structure are arranged on cathode glass faceplate.
Described grid-control circular ring, tip shaped cathode type emission structure backing material is a glass, as soda-lime glass, Pyrex, cathode glass faceplate just, metal level after the etching on the cathode glass faceplate forms the cathode leg layer, doped polycrystalline silicon one deck after the etching on the cathode glass faceplate forms outside negative electrode and increases layer, the longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, bottom and cathode leg layer contact, the top, both sides is sharp triangular shape, laterally plan view shape is the annulus taper, its annulus is positioned at the periphery of grid layer, " U " type outside negative electrode increases silicon dioxide layer after the etching of the inside of layer and forms grid and increase layer, grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, present a circular ring, level is identical with the apical side height that outside negative electrode increases layer on its annulus, the inside that grid increases layer is hollow, the cathode leg layer and the outside negative electrode that expose the bottom increase layer, the metal level that grid increases after the etching at layer top forms grid layer, silicon dioxide layer after the etching above the grid layer forms the grid cover layer, grid increases doped polycrystalline silicon after the etching at inner hollow position of layer and forms inboard negative electrodes for two layers and increase layer, the shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, be inboard negative electrode increase the layer circle diameter than outside negative electrode increase the layer circle diameter little, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer, inboard negative electrode increases the bottom and the cathode leg layer of layer, outside negative electrode increases layer and is communicated with, the height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer, inboard negative electrode increases the metal level formation catalyst layer after the etching at pointed top that layer and outside negative electrode increase layer, can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described grid-control circular ring, tip shaped cathode type emission structure is for being fixed on the cathode glass faceplate, and grid and negative electrode be integrated together, and grid is being controlled the electronics emission of carbon nanotube cathod.The cathode leg layer can be metallic gold, silver, aluminium, tin, chromium, molybdenum.The doping type that outside negative electrode increases layer can be the n type, also can be the p type.Grid layer can be metallic gold, silver, aluminium, molybdenum, chromium, tin, indium, copper.The doping type that inboard negative electrode increases layer can be the n type, also can be the p type, but its doping type will to increase the doping type of layer consistent with outside negative electrode.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare a metal level, form the cathode leg layer after the etching;
3) negative electrode increases the making of layer outside: produce a n type doped polycrystalline silicon one deck on cathode glass faceplate, form outside negative electrode after the etching and increase layer;
4) grid increases the making of layer: a silicon dioxide layer is prepared in the inside of increasing layer at " U " type outside negative electrode, forms grid after the etching and increases layer;
5) making of grid layer: increase a layer top at grid and make a metal level, form grid layer after the etching;
6) the tectal making of grid: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
7) inboard negative electrode increases the making of layer: two layers of n type doped polycrystalline silicon are prepared at the inner hollow position of increasing layer at grid, form inboard negative electrode after the etching and increase layer;
8) making of catalyst layer: increase the pointed top that layer and outside negative electrode increase layer at inboard negative electrode and prepare a nickel dam, form catalyst layer after the etching;
9) cleaning surfaces of grid-control circular ring, tip shaped cathode type emission structure is handled: clean is carried out on the surface to the grid-control circular ring, tip shaped cathode type emission structure, removes impurity and dust;
10) preparation of carbon nano-tube: utilize catalyst layer to go out carbon nanotube cathod as Preparation of Catalyst;
11) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
13) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially and produces a n type doped polycrystalline silicon one deck on cathode glass faceplate, form outside negative electrode after the etching and increase layer, the longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, bottom and cathode leg layer contact, the top, both sides is sharp triangular shape, laterally plan view shape is the annulus taper, and its annulus is positioned at the periphery of grid layer;
Described step 4 is specially in the inside that " U " type outside negative electrode increases layer and prepares a silicon dioxide layer, can carry out etching in conjunction with the photoetching process of routine, forms grid and increases layer; Grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, presents a circular ring, and level is identical with the apical side height that outside negative electrode increases layer on its annulus; The inside that grid increases layer is hollow, and the cathode leg layer and the outside negative electrode that expose the bottom increase layer;
Described step 7 be specially grid increase the layer the inner hollow position prepare two layers of n type doped polycrystalline silicon, can carry out etching in conjunction with the photoetching process of routine, form inboard negative electrode and increase layer; The shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, and it is littler than the circle diameter that outside negative electrode increases layer to be that inboard negative electrode increases the circle diameter of layer, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer; Inboard negative electrode increases the bottom of layer and cathode leg layer, outside negative electrode and increases layer and be communicated with; The height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer;
Described step 13 is specially in conjunction with silk-screen printing technique, and the non-display area printing insulation paste layer at anode conductive layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 14 is specially in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 16 is specially having assembled carries out following packaging technology: the sample device is put in people's baking oven toasted; Put into sintering furnace and carry out high temperature sintering; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in the described grid-control circular ring, tip shaped cathode type emission structure, utilize n type doped polysilicon layer to make negative electrode and increase layer, when applied voltage is applied to the cathode leg layer, increase layer by negative electrode and also just voltage is delivered on the carbon nanotube cathod, simultaneously, because the characteristic of semiconductor place of n type doped polysilicon layer, can carry out self-control to the emission current of the carbon nanotube cathod of flowing through, play the effect of ballast;
Secondly, in described grid-control circular ring, tip shaped cathode type emission structure, made the grid cover layer on the surface of grid layer, so both avoided of the influence of other impurity to grid layer, the appearance of grid and carbon nanotube cathod short circuit phenomenon between the two is avoided in also favourable gate protection is got up simultaneously;
The 3rd, in described grid-control circular ring, tip shaped cathode type emission structure, grid can be simultaneously to the strong control of electronics emission carrying out of the carbon nanotube cathod of inside and outside both sides.Carbon nanotube cathod lays respectively at inboard negative electrode and increases the pointed top that layer and outside negative electrode increase layer, in the electric field strength that can further strengthen the carbon nano-tube top, when effectively reducing the device operating voltage, also further increased the field emission area of carbon nanotube cathod, made full use of the phenomenon that marginal position is launched a large amount of electronics, on basis in conjunction with the good field emission characteristics of carbon nano-tube, strengthen the control action of grid, helped further improving the image quality of integral device.
In addition, in described grid-control circular ring, tip shaped cathode type emission structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of grid-control circular ring, tip shaped cathode type emission structure;
Fig. 2 has provided the transversary schematic diagram of grid-control circular ring, tip shaped cathode type emission structure;
Fig. 3 has provided and has had the structural representation grid-control circular ring, tip shaped cathode type emission structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
The described flat-panel monitor that has the grid-control circular ring, tip shaped cathode type emission structure, comprise by anode glass panel [10], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; Control grid [5], carbon nano-tube [9] negative electrode and grid-control circular ring, tip shaped cathode type emission structure are arranged on cathode glass faceplate; Anode conductive layer [11] and the phosphor powder layer [13] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure [14] and getter [16] subsidiary component.
Described grid-control circular ring, tip shaped cathode type emission structure comprises that cathode glass faceplate [1], cathode leg layer [2], outside negative electrode increase that layer [3], grid increase layer [4], a grid layer [5], grid cover layer [6], inboard negative electrode increases layer [7], catalyst layer [8] and carbon nano-tube [9] part.
Described grid-control circular ring, tip shaped cathode type emission structure backing material is a glass, as soda-lime glass, Pyrex, cathode glass faceplate just, metal level after the etching on the cathode glass faceplate forms the cathode leg layer, doped polycrystalline silicon one deck after the etching on the cathode glass faceplate forms outside negative electrode and increases layer, the longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, bottom and cathode leg layer contact, the top, both sides is sharp triangular shape, laterally plan view shape is the annulus taper, its annulus is positioned at the periphery of grid layer, " U " type outside negative electrode increases silicon dioxide layer after the etching of the inside of layer and forms grid and increase layer, grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, present a circular ring, level is identical with the apical side height that outside negative electrode increases layer on the annulus, it is hollow that grid increases layer inside, the cathode leg layer and the outside negative electrode that expose the bottom increase layer, the metal level that grid increases after layer top etching forms grid layer, silicon dioxide layer above the grid layer after the etching forms the grid cover layer, grid increases doped polycrystalline silicon after the etching at inner hollow position of layer and forms inboard negative electrodes for two layers and increase layer, the shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, be inboard negative electrode increase the layer circle diameter than outside negative electrode increase the layer circle diameter little, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer, inboard negative electrode increases the bottom and the cathode leg layer of layer, outside negative electrode increases layer and is communicated with, the height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer, inboard negative electrode increases the metal level formation catalyst layer after the etching at pointed top that layer and outside negative electrode increase layer, can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described grid-control circular ring, tip shaped cathode type emission structure is for being fixed on the cathode glass faceplate, and grid and negative electrode be integrated together, and grid is being controlled the electronics emission of carbon nanotube cathod.The cathode leg layer can be metallic gold, silver, aluminium, tin, chromium, molybdenum.The doping type that outside negative electrode increases layer can be the n type, also can be the p type.Grid layer can be metallic gold, silver, aluminium, molybdenum, chromium, tin, indium, copper.The doping type that inboard negative electrode increases layer can be the n type, also can be the p type, but its doping type will to increase the doping type of layer consistent with outside negative electrode.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare a metal level,, form the cathode leg layer after the etching as the chromium layer;
3) negative electrode increases the making of layer outside: produce a n type doped polycrystalline silicon one deck on cathode glass faceplate, form outside negative electrode after the etching and increase layer;
4) grid increases the making of layer: a silicon dioxide layer is prepared in the inside of increasing layer at " U " type outside negative electrode, forms grid after the etching and increases layer;
5) making of grid layer: a metal level is prepared at the top of increasing layer at grid, as the metal molybdenum layer, forms grid layer after the etching;
6) the tectal making of grid: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
7) inboard negative electrode increases the making of layer: two layers of n type doped polycrystalline silicon are prepared at the inner hollow position of increasing layer at grid, form inboard negative electrode after the etching and increase layer;
8) making of catalyst layer: increase the pointed top that layer and outside negative electrode increase layer at inboard negative electrode and prepare a nickel dam, form catalyst layer after the etching;
9) cleaning surfaces of grid-control circular ring, tip shaped cathode type emission structure is handled: clean is carried out on the surface to the grid-control circular ring, tip shaped cathode type emission structure, removes impurity and dust;
10) preparation of carbon nano-tube: utilize catalyst layer to go out carbon nanotube cathod as Preparation of Catalyst;
11) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
13) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [14] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially and produces a n type doped polycrystalline silicon one deck on cathode glass faceplate, form outside negative electrode after the etching and increase layer, the longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, bottom and cathode leg layer contact, the top, both sides is sharp triangular shape, laterally plan view shape is the annulus taper, and its annulus is positioned at the periphery of grid layer;
Described step 4 is specially in the inside that " U " type outside negative electrode increases layer and prepares a silicon dioxide layer, can carry out etching in conjunction with the photoetching process of routine, forms grid and increases layer; Grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, presents a circular ring, and level is identical with the apical side height that outside negative electrode increases layer on its annulus; The inside that grid increases layer is hollow, and the cathode leg layer and the outside negative electrode that expose the bottom increase layer;
Described step 7 be specially grid increase the layer the inner hollow position prepare two layers of n type doped polycrystalline silicon, can carry out etching in conjunction with the photoetching process of routine, form inboard negative electrode and increase layer; The shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, and it is littler than the circle diameter that outside negative electrode increases layer to be that inboard negative electrode increases the circle diameter of layer, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer; Inboard negative electrode increases the bottom of layer and cathode leg layer, outside negative electrode and increases layer and be communicated with; The height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer;
Described step 14 is specially in conjunction with silk-screen printing technique, and the non-display area printing insulation paste layer at anode conductive layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 15 is specially in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure and getter subsidiary component is characterized in that: control grid, carbon nanotube cathod and grid-control circular ring, tip shaped cathode type emission structure are arranged on cathode glass faceplate; Described grid-control circular ring, tip shaped cathode type emission structure backing material is a glass, cathode glass faceplate just, metal level after the etching on the cathode glass faceplate forms the cathode leg layer, first doped polysilicon layer after the etching on the cathode glass faceplate forms outside negative electrode and increases layer, the longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, bottom and cathode leg layer contact, the top, both sides is sharp triangular shape, laterally plan view shape is the annulus taper, its annulus is positioned at the periphery of control grid, " U " type outside negative electrode increases silicon dioxide layer after the etching of the inside of layer and forms grid and increase layer, grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, present a circular ring, level is identical with the apical side height that outside negative electrode increases layer on its annulus, the inside that grid increases layer is hollow, the cathode leg layer and the outside negative electrode that expose the bottom increase layer, the metal level that grid increases after the etching at layer top forms the control grid, silicon dioxide layer after the etching above the control grid forms the grid cover layer, grid increases second doped polysilicon layer after the etching at inner hollow position of layer and forms inboard negative electrode and increase layer, the shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, the circle diameter that inboard negative electrode increases layer is littler than the circle diameter that outside negative electrode increases layer, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer, inboard negative electrode increases the bottom and the cathode leg layer of layer, outside negative electrode increases layer and is communicated with, the height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer, the metal level that inboard negative electrode increases after the etching at pointed top that layer and outside negative electrode increase layer forms catalyst layer, and preparing on catalyst layer has carbon nanotube cathod.
2, the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure according to claim 1, it is characterized in that: the fixed position of described grid-control circular ring, tip shaped cathode type emission structure is for being fixed on the cathode glass faceplate, and control grid and carbon nanotube cathod are integrated together, the control grid is being controlled the electronics emission of carbon nanotube cathod, the cathode leg layer is a metallic gold, silver, aluminium, tin, chromium, one of molybdenum, the doping type that outside negative electrode increases layer is the n type or is the p type, control gate is metallic gold very, silver, aluminium, molybdenum, chromium, tin, indium, one of copper, the doping type that inboard negative electrode increases layer is the n type or is the p type, but its doping type will with outside negative electrode increase the layer doping type consistent, catalyst layer is a metallic iron, cobalt, one of nickel.
3, a kind of manufacture craft of the flat-panel monitor with the grid-control circular ring, tip shaped cathode type emission structure, it is characterized in that: its manufacture craft is as follows:
1) making of cathode glass faceplate: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare a chromium layer, form the cathode leg layer after the etching;
3) negative electrode increases the making of layer outside: produce one the one n type doped polysilicon layer on cathode glass faceplate, form outside negative electrode after the etching and increase layer; The longitudinal sectional drawing that outside negative electrode increases layer is shaped as " U " type, and bottom and cathode leg layer contact, and the top, both sides is sharp triangular shape, and laterally plan view shape is the annulus taper, and its annulus is positioned at the periphery of control grid;
4) grid increases the making of layer: a silicon dioxide layer is prepared in the inside of increasing layer at " U " type outside negative electrode, forms grid after the etching and increases layer; Grid increases layer and is positioned at the inside that " U " type outside negative electrode increases layer, presents a circular ring, and level is identical with the apical side height that outside negative electrode increases layer on its annulus; The inside that grid increases layer is hollow, and the cathode leg layer and the outside negative electrode that expose the bottom increase layer;
5) making of control grid: a metal molybdenum layer is prepared at the top of increasing layer at grid, forms the control grid after the etching;
6) the tectal making of grid: on the control grid, prepare a silicon dioxide layer, form the grid cover layer after the etching;
7) inboard negative electrode increases the making of layer: one the 2nd n type doped polysilicon layer is prepared at the inner hollow position of increasing layer at grid, forms inboard negative electrode after the etching and increases layer; The shape that inboard negative electrode increases layer is identical with the shape that outside negative electrode increases layer, and it is littler than the circle diameter that outside negative electrode increases layer to be that inboard negative electrode increases the circle diameter of layer, and inboard negative electrode increases layer and is positioned at the inner hollow position that grid increases layer; Inboard negative electrode increases the bottom of layer and cathode leg layer, outside negative electrode and increases layer and be communicated with; The height that inboard negative electrode increases the pointed top of layer will be lower than the last apical side height that grid increases layer;
8) making of catalyst layer: increase the pointed top that layer and outside negative electrode increase layer at inboard negative electrode and prepare a nickel dam, form catalyst layer after the etching;
9) cleaning surfaces of grid-control circular ring, tip shaped cathode type emission structure is handled: clean is carried out on the surface to the grid-control circular ring, tip shaped cathode type emission structure, removes impurity and dust;
10) preparation of carbon nanotube cathod: utilize catalyst layer to go out carbon nanotube cathod as Preparation of Catalyst;
11) reprocessing of carbon nanotube cathod: carbon nanotube cathod is carried out reprocessing, improve field emission characteristics;
12) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
14) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure according to claim 3, it is characterized in that: described step 14 is specially in conjunction with silk-screen printing technique, non-display area printing insulation paste layer at anode conductive layer is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure according to claim 3 is characterized in that: described step 15 is specially in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of grid-control circular ring, tip shaped cathode type emission structure according to claim 3 is characterized in that: the device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485031A CN100527321C (en) | 2006-08-02 | 2006-08-02 | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485031A CN100527321C (en) | 2006-08-02 | 2006-08-02 | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917133A CN1917133A (en) | 2007-02-21 |
| CN100527321C true CN100527321C (en) | 2009-08-12 |
Family
ID=37738088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100485031A Expired - Fee Related CN100527321C (en) | 2006-08-02 | 2006-08-02 | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100527321C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071741B (en) * | 2007-06-20 | 2011-01-05 | 中原工学院 | Flat-panel display device with ring-gate modulated valley cathode structure and its preparing process |
-
2006
- 2006-08-02 CN CNB2006100485031A patent/CN100527321C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1917133A (en) | 2007-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1956129B (en) | Flat display of circular table cone structure cathode array emission structure and manufacturing process | |
| CN1956132B (en) | Flat display of side wall cathode emission array structure and its manufacturing process | |
| CN100555540C (en) | The flat-panel monitor of bent grid case acuate type array emitting structural and manufacture craft thereof | |
| CN100527321C (en) | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique | |
| CN101071725B (en) | Flat-panel display device with multi-column cathode emitting structure and its preparing process | |
| CN100555536C (en) | The flat-panel monitor of globular cactus type tip cathode array structural and manufacture craft thereof | |
| CN100561648C (en) | The flat-panel monitor of flexural probe type grid control cathode structural and manufacture craft thereof | |
| CN100487849C (en) | Transversing cathode emitting structural panel display device and its production technique | |
| CN100527325C (en) | Flat-board display of curved surface grid-controlled type structure and producing process | |
| CN1937153A (en) | Flat-board display of arc-shape grid controlled array structure and mfg. process | |
| CN1909152B (en) | Honeycomb type grid control cathode emitting structural panel display device and its production technique | |
| CN100487848C (en) | Multiple round annular cathode array emitting structural panel display device and its production technique | |
| CN1971829B (en) | Cogwheel shape lateral emission cathode array structure panel display and its manufacturing technics | |
| CN1953130B (en) | Flat active display with goniometric ballast structure and manufacturing technique thereof | |
| CN100527333C (en) | Coaxial multi-loop column type cathode array structural panel display device and its production technique | |
| CN100595866C (en) | Flat-board display of flat-convex type cathode array structure and manufacturing process | |
| CN1971830B (en) | Rhombus grid-controlled cathode emission array structure panel display and its manufacturing technics | |
| CN1937160B (en) | Flat board display of bar-type cathode side-grid controlled structure and manufacture process | |
| CN100527324C (en) | Flat-board display of internal concave type grid-controlled array structure and producing process | |
| CN1971831B (en) | Hackle sidegrid-controlled structure panel display and its manufacturing method | |
| CN100555541C (en) | The flat-panel monitor of coplanar type current adjusting structural and manufacture craft thereof | |
| CN100580859C (en) | Flat-board display of shallow-pit type cathode curved grid control structure and manufacture process thereof | |
| CN100527326C (en) | Flatboard display of rhombus wire-like high-grid array structure and producing process | |
| CN101071734B (en) | Flat-panel display device with tooth type highgate-modulation structure and its preparing process | |
| CN100527322C (en) | Panel display device for elliptical star-type cathode array emitting structure and its production process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090812 Termination date: 20100802 |