CN100527324C - Flat-board display of internal concave type grid-controlled array structure and producing process - Google Patents
Flat-board display of internal concave type grid-controlled array structure and producing process Download PDFInfo
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- CN100527324C CN100527324C CNB2006101072820A CN200610107282A CN100527324C CN 100527324 C CN100527324 C CN 100527324C CN B2006101072820 A CNB2006101072820 A CN B2006101072820A CN 200610107282 A CN200610107282 A CN 200610107282A CN 100527324 C CN100527324 C CN 100527324C
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Abstract
The flat panel display includes cathode glass faceplate, anode glass faceplate, and sealed vacuum cavity surrounded by glass frame. There are cathode conductive layer, Nano carbon tubes, and inner concave formed structures of grid control array on the cathode glass faceplate. There are anode conductive layer and phosphor layers prepared on the conductive layer on anode glass faceplate. Structure of supporting wall and attached elements of getter are located between anode glass faceplate and cathode glass faceplate. The invention reduces working voltage of grid electrode further, enhances control function and control efficiency of grid electrode so as to be in favor of raising brightness and image quality displayed by the whole apparatus. Advantages are: stable and reliable manufacturing procedure, simple technique and structure, and low cost.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing that flat field causes field-emitter display, be specifically related to the content of element manufacturing mill face of the panel field emission display of carbon nanotube cathod, specially refer to a kind of flat-panel monitor and manufacture craft thereof of internal concave type grid-controlled array structure.
Background technology
Display Technique is the complex art of a multidisciplinary intersection, has been penetrated into every field, and field-emission plane display has won extensive concern with its distinctive advantage at present.Field-emitter display has the advantages that volume is little, brightness is high, the visual angle is big, resolution is high, operation temperature area is big, and it is used more and more widely, has become the hot issue in flat panel display field.Wherein, carbon nano-tube has unique geometric shape, good field emission characteristics, be very suitable for cathode material as flat device, the field emission device that utilizes carbon nano-tube to make then is the hot issue in flat panel display field, is expected in the future occupy bigger share on demonstration market.
In the field emission display device of three-stage structure, grid structure is one of control element of comparison key, and it is controlling the electronics emission of carbon nanotube cathod, and the control ability of grid also is one of important performance indexes of estimating field-emitter display.In present flat device, generally all be to adopt grid to be positioned at the version of carbon nanotube cathod top, its manufacture craft is fairly simple, the control action of grid is more remarkable, but formed grid current is bigger, requires than higher for manufacturing materials, and this is its disadvantage.So, how grid structure is effectively improved on the one hand, how to promote the integrated development of integral device, this is the problem that merits attention; How to strengthen and to improve the control ability of grid structure on the other hand effectively, further reduce the control voltage of grid structure, reduce the leakage current of grid structure, this also is the problem that is worth pondering deeply.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of internal concave type grid-controlled array structure simple in structure.
The object of the present invention is achieved like this, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Insulation paste layer in the printing of the non-display area of anode conductive layer; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have cathode conductive layer, carbon nano-tube and internal concave type grid-controlled array structure on cathode glass faceplate.
The backing material of described internal concave type grid-controlled array structure is glass, just cathode glass faceplate; Electrode layer after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching on the cathode glass faceplate forms negative electrode and promotes layer; Negative electrode promote layer be positioned at the cathode leg layer above, and closely contact with the cathode leg layer; Being positioned at negative electrode above the same cathode leg layer, to promote layer be that cathode leg layer by the bottom is interconnected; It is wedge angle rib vertebra type shape that negative electrode promotes layer, and the bottom contacts with the cathode leg layer, and highest point pools a cusp, but its height will be lower than the height of grid conducting layer; Metal level after the etching on the negative electrode lifting laminar surface forms cathode conductive layer; Cathode conductive layer is covered with the surface on the whole that negative electrode promotes layer; Silicon dioxide layer after the etching above the cathode glass faceplate forms separator; Separator will cover the cathode leg layer fully; Have the electron channel hole in the separator, be round shape, the negative electrode that exposes the bottom promotes layer and cathode conductive layer; The upper and lower surface of separator is the plane, lower surface covers cathode leg layer and vacant cathode glass faceplate, upper surface closely contacts with grid conducting layer, the separator side that is arranged in the electron channel hole also is the face of cylinder perpendicular to cathode glass faceplate, and promptly the electron channel hole is a column type shape; Metal level after the etching above the separator forms grid conducting layer; The major part of grid conducting layer all be positioned at separator above, but its fore-end will stretch to the centre in electron channel hole, presents a kind of vacant state; The front end overhanging portion of grid conducting layer and the height that is positioned at the part above the separator are identical; The side of grid conducting layer front end overhanging portion presents a dome-type shape that caves inward, and the side of whole grid conducting layer front end overhanging portion forms an inner concave shape circular ring structure in the electron channel hole; Silicon dioxide layer after the etching above the grid conducting layer forms the grid cover layer; The grid cover layer is wanted the upper surface of complete cover grid conductive layer, comprises the front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described internal concave type grid-controlled array structure is for being fixed on the cathode glass faceplate; The cathode leg layer is a tin indium oxide rete, or is metal level, as gold, silver, molybdenum, chromium, aluminium; The doping type that negative electrode promotes layer is p type, n type; Cathode conductive layer is metallic iron, cobalt, nickel; Grid conducting layer is metal gold, silver, aluminium, molybdenum, chromium.
A kind of manufacture craft that has the flat-panel monitor of internal concave type grid-controlled array structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare layer of metal, form the cathode leg layer after the etching;
3) negative electrode promotes the making of layer: prepare a doped polysilicon layer on cathode glass faceplate, form negative electrode after the etching and promote layer;
4) making of cathode conductive layer: the surface preparation that promotes layer at negative electrode goes out layer of metal, forms cathode conductive layer after the etching;
5) making of separator: on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching; There is the electron channel hole in the separator;
6) making of grid conducting layer: on separator, prepare a metal level, form grid conducting layer after the etching;
7) the tectal making of grid: on grid conducting layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
8) cleaning surfaces of internal concave type grid-controlled array structure is handled: clean is carried out on the surface to internal concave type grid-controlled array structure, removes impurity and dust;
9) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
10) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
11) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
12) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
13) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
14) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
15) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 12 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 13 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 15 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described internal concave type grid-controlled array structure, the front end side that will be in the grid conducting layer of vacant state has been made into the dome-type shape that caves inward, and the side of whole grid conducting layer front end overhanging portion forms an inner concave shape circular ring structure in the electron channel hole.Like this, on the one hand, help reducing the probability that grid conducting layer and electron beam are in contact with one another, reduce grid current as much as possible, help further strengthening the display brightness of integral device; On the other hand, also be beneficial to realization the electronics by the electron channel hole is carried out the part focusing function, strengthen the display brightness and the image quality of integral device;
Secondly, in described internal concave type grid-controlled array structure, carbon nanotube cathod is made into wedge angle rib vertebra shape structure, can have increased the emission area of carbon nanotube cathod on the one hand effectively, helped further increasing the operating current of device anode; Also improve the shape of carbon nanotube cathod on the other hand, helped further strengthening the electric field strength on top, carbon nanotube cathod surface, forced carbon nanotube cathod under lower grid operating voltage, just can launch more electronics; In addition, also help distance between further reduction of gate structure and the carbon nanotube cathod structure.
In addition, in described internal concave type grid-controlled array structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of internal concave type grid-controlled array structure;
Fig. 2 has provided the oblique view of negative electrode lifting layer in the internal concave type grid-controlled array structure;
Fig. 3 has provided the transversary schematic diagram of internal concave type grid-controlled array structure;
Fig. 4 has provided and has had structural representation internal concave type grid-controlled array structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has internal concave type grid-controlled array structure, comprise by cathode glass faceplate 1, anode glass panel 9 and all around glass enclose the sealed vacuum chamber that frame 14 is constituted; Anode conductive layer 10 and the phosphor powder layer 12 of preparation on anode conductive layer are arranged on the anode glass panel; Insulation paste layer 11 in the printing of the non-display area of anode conductive layer; Supporting wall structure 13 between anode glass panel and cathode glass faceplate and getter subsidiary component 15 have cathode conductive layer 4, carbon nano-tube 8 and internal concave type grid-controlled array structure on cathode glass faceplate.
Described internal concave type grid-controlled array structure comprises that cathode glass faceplate 1, cathode leg layer 2, negative electrode promote layer 3, cathode conductive layer 4, separator 5, grid conducting layer 6, grid cover layer 7 and carbon nano-tube 8 parts.
The backing material of described internal concave type grid-controlled array structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; Electrode layer after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching on the cathode glass faceplate forms negative electrode and promotes layer; Negative electrode promote layer be positioned at the cathode leg layer above, and closely contact with the cathode leg layer; Being positioned at negative electrode above the same cathode leg layer, to promote layer be that cathode leg layer by the bottom is interconnected; It is wedge angle rib vertebra type shape that negative electrode promotes layer, and the bottom contacts with the cathode leg layer, and highest point pools a cusp, but its height will be lower than the height of grid conducting layer; Metal level after the etching on the negative electrode lifting laminar surface forms cathode conductive layer; Cathode conductive layer is covered with the surface on the whole that negative electrode promotes layer; Silicon dioxide layer after the etching above the cathode glass faceplate forms separator; Separator will cover the cathode leg layer fully; Have the electron channel hole in the separator, be round shape, the negative electrode that exposes the bottom promotes layer and cathode conductive layer; The upper and lower surface of separator is the plane, lower surface covers cathode leg layer and vacant cathode glass faceplate, upper surface closely contacts with grid conducting layer, the separator side that is arranged in the electron channel hole also is the face of cylinder perpendicular to cathode glass faceplate, and promptly the electron channel hole is a column type shape; Metal level after the etching above the separator forms grid conducting layer; The major part of grid conducting layer all be positioned at separator above, but its fore-end will stretch to the centre in electron channel hole, presents a kind of vacant state; The front end overhanging portion of grid conducting layer and the height that is positioned at the part above the separator are identical; The side of grid conducting layer front end overhanging portion presents a dome-type shape that caves inward, and the side of whole grid conducting layer front end overhanging portion forms an inner concave shape circular ring structure in the electron channel hole; Silicon dioxide layer after the etching above the grid conducting layer forms the grid cover layer; The grid cover layer is wanted the upper surface of complete cover grid conductive layer, comprises the front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described internal concave type grid-controlled array structure is for being fixed on the cathode glass faceplate; The cathode leg layer can be tin indium oxide rete, also can be metal level, as gold, silver, molybdenum, chromium, aluminium; The doping type that negative electrode promotes layer can be the p type, also can be the n type; Cathode conductive layer can be metallic iron, cobalt, nickel; Grid conducting layer can be metallic gold, silver, aluminium, molybdenum, chromium.
A kind of manufacture craft that has the flat-panel monitor of internal concave type grid-controlled array structure, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer 2: on cathode glass faceplate, prepare the layer of metal molybdenum, form the cathode leg layer after the etching;
3) negative electrode promotes the making of layer 3: prepare a n type doped polysilicon layer on cathode glass faceplate, form negative electrode after the etching and promote layer;
4) making of cathode conductive layer 4: the surface preparation that promotes layer at negative electrode goes out layer of metal nickel, forms cathode conductive layer after the etching;
5) making of separator 5: on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching; There is the electron channel hole in the separator;
6) making of grid conducting layer 6: on separator, prepare a metallic chromium layer, form grid conducting layer after the etching;
7) making of grid cover layer 7: on grid conducting layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
8) cleaning surfaces of internal concave type grid-controlled array structure is handled: clean is carried out on the surface to internal concave type grid-controlled array structure, removes impurity and dust;
9) preparation of carbon nano-tube 8: with made of carbon nanotubes on cathode conductive layer;
10) making of anode glass panel 9: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
11) making of anode conductive layer 10: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
12) making of insulation paste layer 11: at the non-display area printing insulation paste layer of anode conductive layer;
13) making of phosphor powder layer 12: the viewing area printing phosphor powder layer on anode conductive layer;
14) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure 13 and all around glass enclose frame 14 and be assembled together, and getter 15 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
15) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially doped polysilicon layer after the etching on the cathode glass faceplate and forms negative electrode and promote layer; Negative electrode promote layer be positioned at the cathode leg layer above, and closely contact with the cathode leg layer; Being positioned at negative electrode above the same cathode leg layer, to promote layer be that cathode leg layer by the bottom is interconnected; It is wedge angle rib vertebra type shape that negative electrode promotes layer, and the bottom contacts with the cathode leg layer, and highest point pools a cusp, but its height will be lower than the height of grid conducting layer.
Described step 4 is specially the metal level that negative electrode promotes after the etching on the laminar surface and forms cathode conductive layer; Cathode conductive layer is covered with the surface on the whole that negative electrode promotes layer;
The silicon dioxide layer that described step 5 is specially after the etching above the cathode glass faceplate forms separator; Separator will cover the cathode leg layer fully; Have the electron channel hole in the separator, be round shape, the negative electrode that exposes the bottom promotes layer and cathode conductive layer; The upper and lower surface of separator is the plane, lower surface covers cathode leg layer and vacant cathode glass faceplate, upper surface closely contacts with grid conducting layer, the separator side that is arranged in the electron channel hole also is the face of cylinder perpendicular to cathode glass faceplate, and promptly the electron channel hole is a column type shape;
The metal level that described step 6 is specially after the etching above the separator forms grid conducting layer; The major part of grid conducting layer all be positioned at separator above, but its fore-end will stretch to the centre in electron channel hole, presents a kind of vacant state; The front end overhanging portion of grid conducting layer and the height that is positioned at the part above the separator are identical; The side of grid conducting layer front end overhanging portion presents a dome-type shape that caves inward, and the side of whole grid conducting layer front end overhanging portion forms an inner concave shape circular ring structure in the electron channel hole;
Described step 12 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 13 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 15 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of internal concave type grid-controlled array structure, comprise by cathode glass faceplate (1), anode glass panel (9) and all around glass enclose the sealed vacuum chamber that frame (14) is constituted; Anode conductive layer (10) and the phosphor powder layer (12) of preparation on anode conductive layer are arranged on the anode glass panel; Insulation paste layer (11) in the printing of the non-display area of anode conductive layer; Supporting wall structure between anode glass panel and cathode glass faceplate (13) and getter subsidiary component (15) is characterized in that: cathode conductive layer (4), carbon nano-tube (8) and internal concave type grid-controlled array structure are arranged on cathode glass faceplate; The backing material of described internal concave type grid-controlled array structure is glass, just cathode glass faceplate; Electrode layer after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching on the cathode glass faceplate forms negative electrode and promotes layer; Negative electrode promote layer be positioned at the cathode leg layer above, and closely contact with the cathode leg layer; Being positioned at negative electrode above the same cathode leg layer, to promote layer be that cathode leg layer by the bottom is interconnected; It is wedge angle rib vertebra type shape that negative electrode promotes layer, and the bottom contacts with the cathode leg layer, and highest point pools a cusp, but its height will be lower than the height of grid conducting layer; Metal level after the etching on the negative electrode lifting laminar surface forms cathode conductive layer; Cathode conductive layer is covered with the surface on the whole that negative electrode promotes layer; Silicon dioxide layer after the etching above the cathode glass faceplate forms separator; Separator will cover the cathode leg layer fully; Have the electron channel hole in the separator, be round shape, the negative electrode that exposes the bottom promotes layer and cathode conductive layer; The upper and lower surface of separator is the plane, lower surface covers cathode leg layer and vacant cathode glass faceplate, upper surface closely contacts with grid conducting layer, the separator side that is arranged in the electron channel hole also is the face of cylinder perpendicular to cathode glass faceplate, and promptly the electron channel hole is a column type shape; Metal level after the etching above the separator forms grid conducting layer; The major part of grid conducting layer all be positioned at separator above, but its fore-end will stretch to the centre in electron channel hole, presents a kind of vacant state; The front end overhanging portion of grid conducting layer and the height that is positioned at the part above the separator are identical; The side of grid conducting layer front end overhanging portion presents a dome-type shape that caves inward, and the side of whole grid conducting layer front end overhanging portion forms an inner concave shape circular ring structure in the electron channel hole; Silicon dioxide layer after the etching above the grid conducting layer forms the grid cover layer; The grid cover layer is wanted the upper surface of complete cover grid conductive layer, comprises the front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
2, the flat-panel monitor of internal concave type grid-controlled array structure according to claim 1 is characterized in that: the fixed position of described internal concave type grid-controlled array structure is for being fixed on the cathode glass faceplate; The cathode leg layer is one of tin indium oxide rete, gold metal layer, silver metal layer, molybdenum layer, chromium metal level, aluminum metal layer; The doping type that negative electrode promotes layer is p type or n type; Cathode conductive layer is one of metallic iron, cobalt, nickel; Grid conducting layer is one of metal gold, silver, aluminium, molybdenum, chromium.
3, a kind of manufacture craft of flat-panel monitor of internal concave type grid-controlled array structure as claimed in claim 1 is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate (1): whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer (2): on cathode glass faceplate, prepare layer of metal, form the cathode leg layer after the etching;
3) negative electrode promotes the making of layer (3): prepare a doped polysilicon layer on cathode glass faceplate, form negative electrode after the etching and promote layer;
4) making of cathode conductive layer (4): the surface preparation that promotes layer at negative electrode goes out layer of metal, forms cathode conductive layer after the etching;
5) making of separator (5): on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching; There is the electron channel hole in the separator;
6) making of grid conducting layer (6): on separator, prepare a metal level, form grid conducting layer after the etching;
7) making of grid cover layer (7): on grid conducting layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
8) cleaning surfaces of internal concave type grid-controlled array structure is handled: clean is carried out on the surface to internal concave type grid-controlled array structure, removes impurity and dust;
9) preparation of carbon nano-tube (8): with made of carbon nanotubes on cathode conductive layer;
10) making of anode glass panel (9): whole plate glass is carried out scribing, produce the anode glass panel;
11) making of anode conductive layer (10): evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
12) making of insulation paste layer (11): at the non-display area printing insulation paste layer of anode conductive layer;
13) making of phosphor powder layer (12): the viewing area printing phosphor powder layer on anode conductive layer;
14) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure (13) and all around glass enclose frame (14) and be assembled together, and getter (15) is put in the middle of the cavity, fix with glass powder with low melting point;
15) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of internal concave type grid-controlled array structure according to claim 3 is characterized in that: described step 12 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of internal concave type grid-controlled array structure according to claim 3 is characterized in that: described step 13 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of internal concave type grid-controlled array structure according to claim 3 is characterized in that: the device that described step 15 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CNB2006101072820A CN100527324C (en) | 2006-10-17 | 2006-10-17 | Flat-board display of internal concave type grid-controlled array structure and producing process |
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| CNB2006101072820A CN100527324C (en) | 2006-10-17 | 2006-10-17 | Flat-board display of internal concave type grid-controlled array structure and producing process |
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| CN100527324C true CN100527324C (en) | 2009-08-12 |
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