CN2812306Y - Large power LED package structure - Google Patents
Large power LED package structure Download PDFInfo
- Publication number
- CN2812306Y CN2812306Y CNU2005200621075U CN200520062107U CN2812306Y CN 2812306 Y CN2812306 Y CN 2812306Y CN U2005200621075 U CNU2005200621075 U CN U2005200621075U CN 200520062107 U CN200520062107 U CN 200520062107U CN 2812306 Y CN2812306 Y CN 2812306Y
- Authority
- CN
- China
- Prior art keywords
- radiating block
- chip
- power led
- lens
- eliminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
Abstract
The utility model discloses a large power LED package structure which comprises a main body, a chip, a lens, a bracket and a radiating block, wherein the main body is in a short sleeve shape, an upper hole is provided with the lens, a lower hole is provided with the radiating block, the bottom of the radiating block is exposed and the middle part of the main body is penetrated through the bracket along a radial direction. The upper part of the radiating block is provided with a concave portion, the chip is arranged in the concave portion of the radiating block and is connected with the bracket through a conducting wire. Because the bottom of the radiating block of the utility model is exposed, the heat radiation condition of the chip is improved, the heat of the chip can radiate easily, and the phenomenon of lamp death caused by high temperature in a continuous high-power work environment can be eliminated. Simultaneously, because an aluminium substrate is eliminated, the size of the lamp body can be reduced and the requirement of the size of the welding surface is eliminated. The high-power LED can be applied to products with different shapes and sizes following the requirements of clients, and requirements of the LED industry can be satisfied.
Description
Technical field
The utility model relates to field of semiconductor illumination, specifically is a kind of high-power LED encapsulation structure.
Background technology
Traditional great power LED is all made on an aluminium base A as shown in Figure 1 owing to whole lamp body, this structure does not expose because of the radiating block of its chip, the heat that is produced is difficult for distributing at work, and the fault of dead lamp is a big technical barrier that troubles the LED industry to high-powered LED lamp always because long-time use causes temperature to raise.Simultaneously, the installation of traditional high-powered LED lamp needs earlier to weld with the power supply input point behind two leads of weldering on the support shown in above the aluminium base again.Because the aluminium base area is bigger, this just requires the installing space must be also bigger than aluminium base, and these drawbacks are given and installed and use has brought many troubles.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of heat and is easy to distribute, the high-power LED encapsulation structure that physical dimension is little.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is that a kind of high-power LED encapsulation structure comprises body, chip, lens, support, radiating block.Described body is short shell-like, and lens are equipped with in last hole, and radiating block is equipped with in following hole, and expose the bottom of radiating block, and the body middle part radially penetrates support.One depressed part is arranged at described radiating block top, and described chip places in the depressed part on the described radiating block, and connects described support with lead.
Above-described high-power LED encapsulation structure, the part side of described radiating block can expose to outside the body.
Above-described high-power LED encapsulation structure, described radiating block outer surface preferably has one deck silvering.
The utility model has improved the radiating condition of chip because expose the bottom of radiating block, and the heat of chip is easy to distribute, and is unlikely because of producing the dead lamp of high temperature under the environment that continues high power work.Simultaneously, because cancelled aluminium base, can change lamp body for a short time, no longer the size to solder side has too much requirement, can great power LED need be applied to product different, that differ in size with the client and get on, and has satisfied the requirement of LED industry.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is the schematic diagram of traditional great power LED.
Fig. 2 is the structural representation of the utility model embodiment 1.
Fig. 3 is the structural representation of the utility model embodiment 2.
Embodiment
High-power LED encapsulation structure in the utility model embodiment 1 shown in Figure 2 comprises body 1, chip 5, lens 2, support 4, radiating block 3, gold thread 6 and thermal paste 7.Described body 1 is short shell-like, and last hole spiral-lock has lens 2, and radiating block 3 is equipped with in following hole, and the middle part of body 1 radially penetrates 2 supports 4.One depressed part is arranged at above-mentioned radiating block 3 tops, and chip 5 places the depressed part on the radiating block 3 interior bonding with radiating block 3 with thermal paste 7, the support 4 that chip 5 usefulness gold threads 6 connect.The radiating block 3 of present embodiment is the silver-plated structure of copper base, and outer surface has silvering 5a.And as shown in the figure, the bottom of radiating block 3 exposes to outside the body 1.These 2 heat radiations that all help improving chip 5, the gathering of heat when reducing work, also unlikely because of producing the dead lamp of high temperature under the environment that continues high power work.Simultaneously, present embodiment can be done great power LED less, to adapt to the requirement of different environments for use.
High-power LED encapsulation structure shown in Figure 3, the part side of radiating block 3 also exposes to outside the body 1, has further improved the radiating effect of great power LED.
Claims (3)
1. a high-power LED encapsulation structure comprises body, chip, lens, support, radiating block, it is characterized in that, described body is short shell-like, and lens are equipped with in last hole, and radiating block is equipped with in following hole, and expose the bottom of radiating block, and the body middle part radially penetrates support; There is a depressed part in described radiating block portion, and described chip places in the depressed part on the described radiating block, and connects described support with lead.
2. high-power LED encapsulation structure according to claim 1 is characterized in that, the part side open of described radiating block is outside body.
3. high-power LED encapsulation structure according to claim 1 and 2 is characterized in that, described radiating block outer surface has one deck silvering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005200621075U CN2812306Y (en) | 2005-08-02 | 2005-08-02 | Large power LED package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005200621075U CN2812306Y (en) | 2005-08-02 | 2005-08-02 | Large power LED package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2812306Y true CN2812306Y (en) | 2006-08-30 |
Family
ID=36938694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2005200621075U Expired - Fee Related CN2812306Y (en) | 2005-08-02 | 2005-08-02 | Large power LED package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2812306Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009049453A1 (en) * | 2007-10-15 | 2009-04-23 | Foshan Nationstar Optoelectronics Limited Liability Company | A power led encapsulation structure |
| WO2009082864A1 (en) * | 2007-12-27 | 2009-07-09 | Foshan Nationstar Optoelectronics Limited Liability Company | A led light source with the shape of a bar |
| CN101404265B (en) * | 2008-11-10 | 2010-04-21 | 福建福顺半导体制造有限公司 | Integrated circuit semiconductor device |
| CN101319772B (en) * | 2007-06-05 | 2011-07-27 | 亿光电子工业股份有限公司 | Bidirectional cooling LED apparatus |
| CN102185084A (en) * | 2011-04-26 | 2011-09-14 | 深圳市天电光电科技有限公司 | LED (Light-Emitting Diode) packaging bracket as well as uniset and LED packaging structure thereof |
| CN111867236A (en) * | 2020-08-20 | 2020-10-30 | 景旺电子科技(龙川)有限公司 | Circuit board and manufacturing method thereof |
-
2005
- 2005-08-02 CN CNU2005200621075U patent/CN2812306Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319772B (en) * | 2007-06-05 | 2011-07-27 | 亿光电子工业股份有限公司 | Bidirectional cooling LED apparatus |
| WO2009049453A1 (en) * | 2007-10-15 | 2009-04-23 | Foshan Nationstar Optoelectronics Limited Liability Company | A power led encapsulation structure |
| EP2202809A1 (en) * | 2007-10-15 | 2010-06-30 | Foshan Nationstar Optoelectronics Co., Ltd | A structure of heat dissipation substrate for power led and a device manufactured by it |
| EP2202809A4 (en) * | 2007-10-15 | 2013-03-20 | Foshan Nationstar Optoelectronics Co Ltd | A structure of heat dissipation substrate for power led and a device manufactured by it |
| WO2009082864A1 (en) * | 2007-12-27 | 2009-07-09 | Foshan Nationstar Optoelectronics Limited Liability Company | A led light source with the shape of a bar |
| CN101404265B (en) * | 2008-11-10 | 2010-04-21 | 福建福顺半导体制造有限公司 | Integrated circuit semiconductor device |
| CN102185084A (en) * | 2011-04-26 | 2011-09-14 | 深圳市天电光电科技有限公司 | LED (Light-Emitting Diode) packaging bracket as well as uniset and LED packaging structure thereof |
| CN111867236A (en) * | 2020-08-20 | 2020-10-30 | 景旺电子科技(龙川)有限公司 | Circuit board and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN KENA INDUSTRIAL CO., LTD. Free format text: FORMER OWNER: XU HONG Effective date: 20090605 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090605 Address after: Baoan District Gongming Town, Shenzhen City, Guangdong Province, heshuikou village under Lang Industrial Zone tenth, zip code: 518106 Patentee after: SHENZHEN KENA INDUSTRY CO., LTD. Address before: No. 119-10, power village, Wuchang District, Hubei, Wuhan: 430000 Patentee before: Xu Hong |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060830 Termination date: 20120802 |