CN2667747Y - Enclosed micro green light laser - Google Patents
Enclosed micro green light laser Download PDFInfo
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- CN2667747Y CN2667747Y CN 200320108376 CN200320108376U CN2667747Y CN 2667747 Y CN2667747 Y CN 2667747Y CN 200320108376 CN200320108376 CN 200320108376 CN 200320108376 U CN200320108376 U CN 200320108376U CN 2667747 Y CN2667747 Y CN 2667747Y
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Abstract
The utility model discloses a compactly packed mini green light laser generator which has a semiconductor shinning chip, a green light laser generator microchip which is made by combination of laser gain medium and an optical frequency multiplying crystal, an outputting filter foil, a power checking device and a thermal sink. Characteristically, all parts above are supported by and fixed on a tubular shell of the semiconductor laser generator, and all parts are encapsulated in the tubular shell of the mini semiconductor laser generator. The thermal sink is installed on one end of the tubular shell, and the semiconductor shinning chip is fixed on the thermal sink. The green light laser generator microchip and membrane plating of the microchip form an optical resonance cavity which is fixed on inner wall of the tubular shell. Light emitted from the shinning chip illuminates the microchip of the green light laser generator. The outputting filter foil is installed on the other end of the tubular shell with an oblique angle. The power checking device is fixed on the thermal sink and allocated on route of reflected light from the outputting filter foil. The utility model with low cost, small cubage and simple structure can largely improve production efficiency, which is suitable for mass production and automated production.
Description
Technical field
The utility model relates to the green (light) laser of semiconductor laser pumping, especially design a kind of microencapsulated green (light) laser (Green Diode Laser, GDL).
Background technology
The structure of the green (light) laser of general semiconductor laser pumping as shown in Figure 1, Fig. 1 (a) illustrates several basic elements of character of the green (light) laser of semiconductor laser pumping, comprise: semiconductor laser thermal sediment 101, semiconductor laser 102, coupling focusing system 103, gain medium 104 and optical frequency-doubling crystal 105, they are accepted with an inner core, again this inner core is encapsulated into 109 li in an overcoat, shown in Fig. 1 (b).In order to make such laser realize permanent power output, then need outside inner core, to add beam splitting chip, photodiode and related circuit (these do not illustrate) in Fig. 1, promptly adopt external APC structure to realize, and then encapsulate with overcoat.The laser structure more complicated of this packaged type, it is microminiaturized to have determined that its encapsulation cannot realize, and the cost height, has limited the range of application of this device, is not suitable in enormous quantities, automated production.
Summary of the invention
The purpose of this utility model provides a kind of green (light) laser (GDL) of semiconductor laser pumping of microencapsulated, makes its structure more compact, and volume is littler, realizes microminiaturized.
In order to achieve the above object, the utility model adopts following technical scheme:
A kind of green (light) laser of microencapsulated, comprise the semiconductor laser luminescence chip, by the synthetic green (light) laser microplate of gain medium and optical frequency-doubling crystal, output filter plate, power monitoring device and heat sink, it is characterized in that, said elements all with the semiconductor laser shell as accepting and being fixed thereon, and all component all is encapsulated in the miniature semiconductor laser shell
A described heat sink end that is installed in described semiconductor laser shell;
Described semiconductor laser luminescence chip be fixed on described heat sink on;
Described gain medium, described optical frequency-doubling crystal and the plated film on it form optical resonator jointly, are fixed on the inwall of described semiconductor laser shell; The illumination that described semiconductor laser luminescence chip sends is mapped on the described green (light) laser microplate;
Described output filter plate is installed in the other end of described semiconductor laser shell, is the angle of inclination and places;
Described power monitoring device be fixed on described heat sink on, its position is on the reverberation light path of described output filter plate.
In one embodiment, described gain medium and described optical frequency-doubling crystal lump together, and form the green (light) laser microplate; The incident end of described green (light) laser microplate is coated with 808nm anti-reflection film, 1064nm high-reflecting film and 532nm high-reflecting film, and output is coated with 532nm anti-reflection film and 1064nm high-reflecting film; Described green (light) laser microplate and the plated film on it form optical resonator jointly; The light that described semiconductor laser luminescence chip sends is the described green (light) laser microplate of end pumping closely directly; Described power monitoring device is the photodiode that photosurface is coated with 532nm anti-reflection film, 808nm high-reflecting film and 1064nm high-reflecting film; Perhaps, described power monitoring device is that photodiode top adds the light high permeability of a slice to 532nm, the filter plate that the light intensity of 808nm and 1064nm is absorbed.
In one embodiment, also comprise the coupling focusing system, be fixed on the inwall of described semiconductor laser shell, be positioned at the centre of described semiconductor laser luminescence chip and described green (light) laser microplate; The light that described semiconductor laser luminescence chip sends shines on the described green (light) laser microplate after described coupling focusing system focuses on.
In one embodiment, described gain medium and described optical frequency-doubling crystal are placed apart; The incident end of described gain medium is coated with 808nm anti-reflection film and 1064nm high-reflecting film, and output is coated with the 1064nm anti-reflection film; The incident end of described optical frequency-doubling crystal is coated with 532nm anti-reflection film and 1064nm anti-reflection film, and output is coated with 532nm anti-reflection film 1064nm high-reflecting film; Described gain medium, described optical frequency-doubling crystal and the plated film on it form optical resonator jointly, and the light that described semiconductor laser luminescence chip sends is the described gain medium of end pumping closely directly; Described power monitoring device is the photodiode that photosurface is coated with 532nm anti-reflection film, 808nm high-reflecting film and 1064nm high-reflecting film; Perhaps, described power monitoring device is that photodiode top adds the light high permeability of a slice to 532nm, the filter plate that the light intensity of 808nm and 1064nm is absorbed.
The green (light) laser of microencapsulated of the present utility model can also comprise adjusting Q crystal, is placed between described green (light) laser microplate and the described output filter plate, lumps together with described green (light) laser microplate or placed apart.And the modeling element is placed between described green (light) laser microplate and the described output filter plate, lumps together with described green (light) laser microplate or placed apart.
Also above-mentioned technology can be applied to a kind of infrared laser of microencapsulated, comprise semiconductor laser luminescence chip, gain medium, output filter plate, power monitoring device and heat sink, it is characterized in that, said elements all with the semiconductor laser shell as accepting and being fixed thereon, and all component all is encapsulated in the miniature semiconductor laser shell
A described heat sink end that is installed in described semiconductor laser shell;
Described semiconductor laser luminescence chip be fixed on described heat sink on;
Described gain medium and the plated film on it form optical resonator jointly, are fixed on the inwall of described semiconductor laser shell; The illumination that described semiconductor laser luminescence chip sends is mapped on the described gain medium;
Described output filter plate is installed in the other end of described semiconductor laser shell, is the angle of inclination and places;
Described power monitoring device be fixed on described heat sink on, its position is on the reverberation light path of described output filter plate.
In one embodiment, the incident end of described gain medium is coated with 808nm anti-reflection film and 1064nm high-reflecting film, and output is coated with the 1064nm high-reflecting film; The light that described semiconductor laser luminescence chip sends is the described gain medium of end pumping closely directly; Described power monitoring device is the photodiode that photosurface is coated with 1064nm anti-reflection film and 808nm high-reflecting film; Described power monitoring device also can add the light high permeability of a slice to 1064nm by photodiode top, and the filter plate that the light intensity of 808nm absorbs is realized.
The infrared laser of microencapsulated of the present utility model also comprises adjusting Q crystal, is placed between described gain medium and the described output filter plate, lumps together with described gain medium or placed apart; And the modeling element, be placed between described gain medium and the described output filter plate, lump together with described gain medium or placed apart.
Adopt green (light) laser (GDL) cost of microencapsulated of the technical solution of the utility model low, volume is small and exquisite, simple in structure, can enhance productivity, be suitable for automated production in enormous quantities greatly.
Description of drawings
Fig. 1 (a) and (b) be the structured flowchart of the laser of prior art;
Fig. 2 (a) and (b) be the structured flowchart of an embodiment of the green (light) laser of microencapsulated of the present utility model;
Fig. 3 (a) and (b) be the structured flowchart of another embodiment of the green (light) laser of microencapsulated of the present utility model;
Fig. 4 is the structured flowchart of the 3rd embodiment of the green (light) laser of microencapsulated of the present utility model;
Fig. 5 is the structured flowchart of the 4th embodiment of the green (light) laser of microencapsulated of the present utility model;
Fig. 6 is the structured flowchart of the 5th embodiment of green (light) laser of microencapsulated of the present utility model;
Fig. 7 is the structured flowchart of an embodiment of the infrared laser of microencapsulated of the present utility model.
Embodiment
Further specify the technical solution of the utility model below in conjunction with drawings and Examples.
Fig. 2 (a) and (b) be the structure chart of an embodiment of the green (light) laser of microencapsulated of the present utility model, focusing system is not coupled in this structure.This embodiment comprises: heat sink 201, be installed in an end of semiconductor laser shell 208.Semiconductor laser luminescence chip 202 is fixed on heat sink 201.Gain medium 203 links to each other with optical frequency-doubling crystal 2 04, and their gummeds, optical cement or in-depth optical cement form green (light) laser microplate (GLC) together.Gain medium 203 can be Nd: YAG, Nd: YVO
4Or the similar laser gain media, optical frequency-doubling crystal 2 04 can be KTP, KDP, LBO, BBO, ADP, LiIO
3Or similar nonlinear material.Be coated with 808nm anti-reflection film, 532nm and 1064nm high-reflecting film by link to each other with the optical frequency-doubling crystal 2 04 incident end (being the incident end of gain medium 203) of the green (light) laser microplate that forms of gain medium 203, output (being the output of optical frequency-doubling crystal 2 04) is coated with 1064nm high-reflecting film and 532nm anti-reflection film, the green (light) laser microplate and on plated film together constitute optical resonator.Output filter plate 205 is the angle of inclination and places at the other end of semiconductor laser shell 208.The power monitoring device is fixed on heat sink 201, and its position is on the reverberation light path of output filter plate 205.The power monitoring device is a photodiode 206 among this embodiment, its photosurface is coated with 532nm anti-reflection film, 808nm and 1064nm high-reflecting film, perhaps above photosurface, add the light high permeability of a slice, the filter plate that the light intensity of 808nm and 1064nm is absorbed to 532nm.The operation principle of this embodiment is as follows: the closely direct incident green (light) laser microplate of the light of semiconductor laser luminescence chip 202 outgoing, the green glow of output 532nm, green glow is got on the output filter plate of placing with small angle inclination 205, output filter plate 205 will export that sub-fraction light reflexes on the photosurface of the photodiode 206 that is encapsulated on heat sink 201 in the green glow, photodiode 206 is converted into photoelectric current with the light signal that samples, by external comparison circuit, realize of the permanent power control of built-in APC structure to the 532nm green glow.All these laser assemblies are all accepted by semiconductor laser shell 208, and are encapsulated in the semiconductor laser shell 208, realize the green (light) laser (GDL) of microencapsulated.
Be illustrated in figure 3 as the structure chart of another embodiment of GDL of the present utility model, also comprise coupling focusing system 303 in the structure of this embodiment, be fixed on the inwall of semiconductor laser shell 309, be positioned at the centre of semiconductor laser luminescence chip 302 and gain medium 304.Among this embodiment, gain medium 303 and optical frequency-doubling crystal 3 04 gummed, optical cement or in-depth optical cement form GLC together.Semiconductor laser luminescence chip 302 emergent lights are after coupling focusing system 303, focus on the GLC, the green glow of output 532nm, after green glow is got on the output filter plate of placing with small angle inclination 306, the sub-fraction green glow is reflected on the photosurface of the photodiode 307 that is encapsulated on heat sink 301, by external comparison circuit, realize of the permanent power control of built-in APC structure to the 532nm green glow, all these laser assemblies are all accepted by semiconductor laser shell 309, and be encapsulated in the semiconductor laser shell 309, realize the green (light) laser (GDL) of microencapsulated.Plated film situation among this embodiment is identical with a last embodiment.
Be illustrated in figure 4 as the structure chart of the 3rd embodiment of GDL of the present utility model, among this embodiment, gain medium 403 and optical frequency-doubling crystal 4 04 are placed apart, gain medium 403 is coated with 808nm anti-reflection film and 1064nm high-reflecting film near the surface (incident end) of semiconductor laser luminescence chip 402, another side (output) is coated with the 1064nm anti-reflection film, optical frequency-doubling crystal 4 04 is coated with 1064nm anti-reflection film and 532nm anti-reflection film near the surface (incident end) of gain medium 403, and another side (output) is coated with 1064nm high-reflecting film and 532nm anti-reflection film.Semiconductor laser luminescence chip 402 emergent lights are incident laser gain media 403 closely directly, the 1064nm infrared light that produces is behind optical frequency-doubling crystal 4 04, obtain the green glow output of 532nm, after green glow is got to the output filter plate of placing with small angle inclination 405, the sub-fraction green glow is reflected on the photodiode 406 that is encapsulated on heat sink 401, by external comparison circuit, realize of the permanent power control of built-in APC structure to the 532nm green glow.All these laser assemblies are all accepted by the semiconductor laser shell, and are encapsulated in the semiconductor laser shell, realize the green (light) laser (GDL) of microencapsulated.
Be illustrated in figure 5 as the structure chart of the 4th embodiment of GDL of the present utility model, similar and first, second embodiment of this GLC, gain medium 503 and optical frequency-doubling crystal 5 04 form GLC, also place an adjusting Q crystal 505 (being between GLC and the output filter plate) behind the GLC, adjusting Q crystal 505 and GLC can gummeds, optical cement or in-depth optical cement together, also can be placed apart, by adjusting Q crystal 505, this laser can be realized the pulse green (light) laser of microencapsulated.Other parts, heat sink 501, semiconductor laser luminescence chip 502, output filter plate 506, photodiode 507 all with previous embodiment in the same.
Be illustrated in figure 6 as the structure chart of the 5th embodiment of GDL of the present utility model, similar and first, second embodiment of this GLC, gain medium 603 and optical frequency-doubling crystal 6 04 form GLC, place a modeling element 605 (being between GLC and the output filter plate) behind the GLC, modeling element 605 and GLC can gummeds, optical cement or in-depth optical cement together, also can be placed apart, by modeling element 605, this laser can be realized the single longitudinal mode green (light) laser of microencapsulated.Other parts, heat sink 601, semiconductor laser luminescence chip 602, output filter plate 606, photodiode 607 all with previous embodiment in the same.
Microencapsulated structure of the present utility model can also be applied on the infrared laser.Figure 7 shows that the structure chart of an embodiment of the infrared laser of microencapsulated of the present utility model, this embodiment comprises: heat sink 701, be installed in an end of semiconductor laser shell (not drawing among Fig. 7).Semiconductor laser luminescence chip 702 is fixed on heat sink 701.Gain medium 703 and the plated film on it form optical resonator jointly, are fixed on the inwall of semiconductor laser shell; The illumination that semiconductor laser luminescence chip 702 sends is mapped on the described gain medium.Among this embodiment, the incident end of gain medium 703 is coated with 808nm anti-reflection film and 1064nm high-reflecting film, and output is coated with 1064nm high-reflecting film (R:92% ~ 98%).Output filter plate 704 is installed in the other end of semiconductor laser shell, is the angle of inclination and places.The power monitoring device is fixed on heat sink 701, and its position is on the reverberation light path of output filter plate 704.Among this embodiment, the power monitoring device is a photodiode 705, and its photosurface is coated with 1064nm anti-reflection film and 808nm high-reflecting film, perhaps adds the light high permeability of a slice to 1064nm above photosurface, the filter plate that the light intensity of 808nm is absorbed.The operation principle of this embodiment is as follows: the pump light of semiconductor laser luminescence chip 702 outgoing closely is directly incident on the gain medium 703, the infrared light of output 1064nm, after infrared light is got on the output filter plate of placing with small angle inclination 704, the sub-fraction infrared light is reflected on the photodiode 705 that is encapsulated on heat sink 701, by external comparison circuit, realize the permanent power control of built-in APC to the 1064nm infrared light, all these laser assemblies all are encapsulated in the semiconductor laser shell, realize the infrared laser of microencapsulated.
Also can add adjusting Q crystal or modeling element in the structure of embodiment shown in Figure 7, realize the infrared Q-switched laser or the infrared single longitudinal mode laser of microencapsulated.
Compared with prior art, the utlity model has following outstanding effect: the utility model all is encapsulated in all component of the green (light) laser of semiconductor laser pumping in the miniature semiconductor laser shell, simple in structure, volume is small and exquisite and greatly reduce production cost, is suitable for automated production in enormous quantities.
The foregoing description provides to being familiar with the person in the art and realizes or use of the present utility model; those skilled in the art can be under the situation that does not break away from invention thought of the present utility model; the foregoing description is made various modifications or variation; thereby protection range of the present utility model do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (6)
1. the green (light) laser of a microencapsulated, comprise the semiconductor laser luminescence chip, by the synthetic green (light) laser microplate of gain medium and optical frequency-doubling crystal, output filter plate, power monitoring device and heat sink, it is characterized in that, said elements all with the semiconductor laser shell as accepting and being fixed thereon, and all component all is encapsulated in the miniature semiconductor laser shell
A described heat sink end that is installed in described semiconductor laser shell;
Described semiconductor laser luminescence chip be fixed on described heat sink on;
Green (light) laser microplate that described gain medium and described optical frequency-doubling crystal are synthetic and the plated film on it form optical resonator jointly, are fixed on the inwall of described semiconductor laser shell; The illumination that described semiconductor laser luminescence chip sends is mapped on the described green (light) laser microplate;
Described output filter plate is installed in the other end of described semiconductor laser shell, is the angle of inclination and places;
Described power monitoring device be fixed on described heat sink on, its position is on the reverberation light path of described output filter plate.
2. the green (light) laser of microencapsulated as claimed in claim 1 is characterized in that,
The incident end of described green (light) laser microplate is coated with 808nm anti-reflection film, 1064nm high-reflecting film and 532nm high-reflecting film, and output is coated with 532nm anti-reflection film and 1064nm high-reflecting film; Described green (light) laser microplate and the plated film on it form optical resonator jointly; The light that described semiconductor laser luminescence chip sends is the described green (light) laser microplate of end pumping closely directly;
Described power monitoring device is the photodiode that photosurface is coated with 532nm anti-reflection film, 808nm high-reflecting film and 1064nm high-reflecting film; Perhaps
Described power monitoring device is that photodiode top adds the light high permeability of a slice to 532nm, the filter plate that the light intensity of 808nm and 1064nm is absorbed.
3. the green (light) laser of microencapsulated as claimed in claim 2 is characterized in that, also comprises
The coupling focusing system is fixed on the inwall of described semiconductor laser shell, is positioned at the centre of described semiconductor laser luminescence chip and described green (light) laser microplate; The light that described semiconductor laser luminescence chip sends shines on the described green (light) laser microplate after described coupling focusing system focuses on.
4. the green (light) laser of microencapsulated as claimed in claim 1 is characterized in that,
Be provided with described green (light) laser microplate, described gain medium and described optical frequency-doubling crystal are placed apart; The incident end of described gain medium is coated with 808nm anti-reflection film and 1064nm high-reflecting film, and output is coated with the 1064nm anti-reflection film; The incident end of described optical frequency-doubling crystal is coated with 532nm anti-reflection film and 1064nm anti-reflection film, and output is coated with 532nm anti-reflection film 1064nm high-reflecting film; Described gain medium, described optical frequency-doubling crystal and the plated film on it form optical resonator jointly, and the light that described semiconductor laser luminescence chip sends is the described gain medium of end pumping closely directly;
Described power monitoring device is the photodiode that photosurface is coated with 532nm anti-reflection film, 808nm high-reflecting film and 1064nm high-reflecting film; Perhaps
Described power monitoring device is that photodiode top adds the light high permeability of a slice to 532nm, the filter plate that the light intensity of 808nm and 1064nm is absorbed.
5. as the green (light) laser of each described microencapsulated in the claim 1 to 4, it is characterized in that, also comprise adjusting Q crystal, be placed between described green (light) laser microplate and the described output filter plate, lump together with described green (light) laser microplate or placed apart.
6. as the green light semiconductor of each described encapsulation in the claim 1 to 4, it is characterized in that, also comprise the modeling element, be placed between described green (light) laser microplate and the described output filter plate, lump together with described green (light) laser microplate or placed apart.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320108376 CN2667747Y (en) | 2003-11-26 | 2003-11-26 | Enclosed micro green light laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320108376 CN2667747Y (en) | 2003-11-26 | 2003-11-26 | Enclosed micro green light laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2667747Y true CN2667747Y (en) | 2004-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200320108376 Expired - Lifetime CN2667747Y (en) | 2003-11-26 | 2003-11-26 | Enclosed micro green light laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051730B (en) * | 2006-04-05 | 2011-11-02 | 福州高意通迅有限公司 | Intracavity frequency multiplier laser |
| CN102324690A (en) * | 2011-09-29 | 2012-01-18 | 马英俊 | Semiconductor solid laser |
| CN102457013A (en) * | 2010-10-29 | 2012-05-16 | 北京中视中科光电技术有限公司 | Surface-mounted solid laser as well as adjusting device and manufacturing method of surface-mounted solid laser |
| CN102938533A (en) * | 2012-11-28 | 2013-02-20 | 西安精英光电技术有限公司 | Semiconductor pump micro laser tube |
| CN106356701A (en) * | 2016-11-24 | 2017-01-25 | 上海宜山光电科技有限公司 | Passive Q-regulating laser device packaged in butterfly form |
| CN110687034A (en) * | 2018-07-05 | 2020-01-14 | 深圳迈瑞生物医疗电子股份有限公司 | Laser irradiation system of flow cytometer and flow cytometer |
-
2003
- 2003-11-26 CN CN 200320108376 patent/CN2667747Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051730B (en) * | 2006-04-05 | 2011-11-02 | 福州高意通迅有限公司 | Intracavity frequency multiplier laser |
| CN102457013A (en) * | 2010-10-29 | 2012-05-16 | 北京中视中科光电技术有限公司 | Surface-mounted solid laser as well as adjusting device and manufacturing method of surface-mounted solid laser |
| CN102324690A (en) * | 2011-09-29 | 2012-01-18 | 马英俊 | Semiconductor solid laser |
| CN102324690B (en) * | 2011-09-29 | 2014-08-27 | 马英俊 | Semiconductor solid laser |
| CN102938533A (en) * | 2012-11-28 | 2013-02-20 | 西安精英光电技术有限公司 | Semiconductor pump micro laser tube |
| WO2014082348A1 (en) * | 2012-11-28 | 2014-06-05 | 西安精英光电技术有限公司 | Miniature laser tube of semiconductor laser pump |
| CN106356701A (en) * | 2016-11-24 | 2017-01-25 | 上海宜山光电科技有限公司 | Passive Q-regulating laser device packaged in butterfly form |
| CN110687034A (en) * | 2018-07-05 | 2020-01-14 | 深圳迈瑞生物医疗电子股份有限公司 | Laser irradiation system of flow cytometer and flow cytometer |
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| C14 | Grant of patent or utility model | ||
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| CX01 | Expiry of patent term |
Expiration termination date: 20131126 Granted publication date: 20041229 |