CN102938533A - Semiconductor pump micro laser tube - Google Patents
Semiconductor pump micro laser tube Download PDFInfo
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- CN102938533A CN102938533A CN2012104974441A CN201210497444A CN102938533A CN 102938533 A CN102938533 A CN 102938533A CN 2012104974441 A CN2012104974441 A CN 2012104974441A CN 201210497444 A CN201210497444 A CN 201210497444A CN 102938533 A CN102938533 A CN 102938533A
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- laser
- main body
- body base
- rectangular cylinder
- light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The invention discloses a semiconductor pump micro laser tube, which comprises a main body base, a rectangular cylinder arranged on the main body base, and a binding post connected below the main body base, wherein the main body base and the rectangular cylinder are in integrated mechanical connection; the inner side of the rectangular cylinder is sequentially provided with a 808-nm laser pump light source and a YVO4+PPLN laser crystal from top to bottom; a PD optical receiver is arranged on the main body base; and the semiconductor pump micro laser tube also comprises a metal protection shell sleeve on the main body base. According to the laser tube, the overall dimension of a 532 nano laser in the prior art is reduced, the laser tube is compact in structure and reasonable in design, the 532-nm pump laser miniaturization is successfully realized, the reliability and stability of the performance of the laser tube are improved, and the requirements on the laser tubes in the conventional market are met.
Description
Technical field
Type of the present invention belongs to field of photoelectric technology, and especially relating to a kind of wavelength is the semiconductor pumped miniature laser pipe of the green glow pump laser integrated micro of 532nm.
Background technology
Semiconductor laser tube is pressed the wavelength classification because its structure is tightly played, and volume is little, and the technology conversion process is relatively simple, and low-cost characteristics just are widely used at laser field, and the laser tube of technology maturation has purple light (405 nanometer) on the market now; Blue light (450 nanometer); Ruddiness and infrared (635 nanometer to 1310 nanometer), however green glow (532 nanometer) still is a very large demand but field that technical bottleneck fails to break through in the market demand.Now comparatively general technical method is to use the pumping formula laser that the frequency-doubling crystal of the laser tube of 808 nanometers and 532 nanometers makes up to realize on the market, has following shortcoming and defect in the existing technology that realizes green glow:
1, the technology conversion process is complicated.The laser of existing 532 nanometers realizes that technology will realize that the assembling and setting precision prescribed between the parts is higher by the combination of a plurality of lens and parts, and assembling process is complicated.Assembly difficulty is large, in production in enormous quantities, has limited the raising of production efficiency.
2, overall dimension is larger.A distinguishing feature of semiconductor laser is exactly that its volume is little, and it is convenient to use, however the implementation method that generally adopts now because the parts that need are many, the increase of the whole system size of bringing thus so that its application in less space be restricted.
3, realize that cost is higher.Realize that output wavelength is the laser of 532 nanometers, at first needing an output wavelength is 808 nanometer laser pipes, by optical lens the laser tube light beam of 808 nanometers is carried out shaping again, make its pumping end surface that is coupled to frequency-doubling crystal, through the green beam of output 532 nanometers behind the crystal double frequency.Whole system needs a plurality of parts assemblies, and not only material cost is high, and because the complexity of assembling process also makes its process cost higher.
4, reliability is not high.The final performance of the more much easier impacts of intermediate link, because arts demand, most of glue that adopts is realized connection between the part admittedly in the system, and lens and crystal are in case occur looseningly, and whole system is seen and is paralysed or scrap state.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor pumped miniature laser pipe, the overall dimension of 532 nano lasers of this laser tube by reducing existing techniques in realizing, its compact conformation is used more extensive; The complexity that it has solved existing technique has improved the reliability and stability of this laser tube performance; Satisfied the demand of existing market to this type of laser tube.
The objective of the invention is to realize by following technical proposals.
A kind of semiconductor pumped miniature laser pipe comprises main body base and the rectangular cylinder that places on the main body base, is connected to the binding post of main body base below, and described main body base and rectangular cylinder are the integral type mechanical connection; The rectangular cylinder inboard is disposed with up and down 808nm laser pumping light source and YVO4+PPLN laser crystal, is provided with the PD optical receiver on the main body base; Comprise that also one is socketed on the metal coating shell on the described main body base.
Further, in the described laser tube:
Described main body base and described rectangular cylinder are in vertical distribution.
The described 808nm laser pumping light source that is arranged at the rectangular cylinder inboard and YVO4+PPLN laser crystal distribute respectively from bottom to top successively, the upper surface of the pumping of the luminous point of 808nm laser pumping light source and YVO4+PPLN laser crystal over against.
Described 808nm laser pumping light source is arranged on rectangular cylinder and the main body base abutted surface, and the 808nm laser pumping light source is oppositely arranged with the PD optical receiver that is arranged on the main body base.
Described binding post joins with 808nm laser pumping light source, YVO4+PPLN laser crystal and PD optical receiver respectively.
Described metal coating casing is connected to the main body base upper surface, will comprise that the parts of described rectangular cylinder, 808nm laser pumping light source, YVO4+PPLN laser crystal and PD optical receiver are put in the inner.
Described metal coating shell is the cylindrical cavity structure, is provided with the light hole for bright dipping on the top of this cavity body, and the upper surface of light hole is the inclined plane, is coated with the feedback glass lens on the inclined plane.
The present invention compared with prior art has the following advantages:
1, compact conformation of the present invention is reasonable in design, and assembling is simple, and it is convenient to realize.
2, the present invention with all implementation procedures of 532 nanometers (green glow) laser all integration packaging to together, directly realized the miniature laser pipe of wavelength 532 nanometers, it is complicated and huge contour structures has realized that successfully the 532nm pump laser is microminiaturized to have dwindled greatly the laser of realizing 532 nanometers.
3, the present invention directly with the nearly source point coupling of YVO4+PPLN laser crystal and 808nm laser pumping light source, has omitted the shaping link with the lens on light source, has simplified thus technique, has saved cost.
4, realization cost of the present invention is low, has reduced the power consumption of green (light) laser, and long service life is practical, is convenient to promote the use of.
The present invention with 808nm laser pumping light source and YVO4+PPLN laser crystal all integrated installation at the inner surface of rectangular cylinder, the luminous point of 808nm laser pumping light source is over against the pumping end surface of YVO4+PPLN laser crystal and on same straight line, the 532nm laser that PD optical receiver receiving unit YVO4+PPLN laser crystal sends on the base.All devices are integrated in the very little space, to realize the microminiaturization of 532nm pump laser.
Main feature of the present invention is: the laser pumping YVO4+PPLN laser crystal that 808nm LD sends sends 532nm laser, and process mirror reflects part 532nm laser is to the PD receiver, the PD receiver according to the power of feedback 532nm laser provide signal adjust the 808nm pumping laser size, to keep the stability of 532nm laser power.And select the YVO4+PPLN laser crystal can greatly reduce the operating current of 532nm laser.This invention is the very large low-power consumption micro green (light) laser of a kind of practical value, and huge market value is arranged.
Description of drawings
Fig. 1 is STRUCTURE DECOMPOSITION figure of the present invention.
Fig. 2 is main part structural representation of the present invention.
Fig. 3 is the front view of Fig. 2.
Fig. 4 is the vertical view of Fig. 2.
Fig. 5 is the assembling sectional structure schematic diagram of invention.
Description of reference numerals:
1-main body base; 2-rectangular cylinder; 3-808nm laser pumping light source;
4-YVO4+PPLN laser crystal; 5-PD light receiving tube; 6-metal coating shell;
7-feedback glass lens 8-binding post (pin)
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
As shown in Figure 1, the invention of this reality comprises housing parts and main part.
As shown in Figure 2, main part comprises circular body base 1 and the rectangular cylinder 2 that places on the main body base 1, below main body base 1, be connected with binding post 8(pin), wherein: main body base 1 and rectangular cylinder 2 are the integral type mechanical connection, and main body base 1 is in vertical distribution with described rectangular cylinder 2; As shown in Figure 3, rectangular cylinder 2 inboards are disposed with respectively 808nm laser pumping light source 3 and YVO4+PPLN laser crystal 4 from bottom to top, the upper surface of the luminous point of 808nm laser pumping light source 3 and YVO4+PPLN laser crystal 4 over against; Be provided with PD optical receiver 5(detector tube on the main body base 1); 808nm laser pumping light source 3 is arranged on the rectangular cylinder 2 that rectangular cylinder 2 and main body base 1 join, and 808nm laser pumping light source 3 is oppositely arranged with the PD optical receiver 5 that is arranged on the main body base 1.
8 one of three binding posts are in the electric performance conducting connection status with main body base 1, and two lead to the top of main body base 1 by insulated hole, and binding post 8 joins with 808nm laser pumping light source 3, YVO4+PPLN laser crystal 4 and PD optical receiver 5 respectively.
As shown in Figure 3, in the present embodiment, the main body base 1 top set rectangular cylinder 2 of a side is 90 degree with main body base 1 and is connected, and both are that machinery is one-body molded; The inboard of rectangular cylinder 2 is a plane, to make things convenient for laying of 808nm laser pumping light source 3 and YVO4+PPLN laser crystal 4; Main body base 1 upper surface and rectangular cylinder 2 corresponding opposite sides are installed PD light receiving tube 5.
As shown in Figure 3, in an embodiment of the present invention, 808nm laser pumping light source 3 is installed in the below of rectangular cylinder 2 inboards, the top that is installed in described 808nm laser pumping light source 3 that YVO4+PPLN laser crystal 4 is relative makes the luminous point of 808nm laser pumping light source 3 over against the end sensitive surface of YVO4+PPLN laser crystal 4.As shown in Figure 4, an electrode of 808nm laser pumping light source 3 is connected with main body base 1, and another electrode is connected with a binding post that leads to main body base 1 top, and both also are on the same straight line; The opposite side corresponding with main body settled PD light receiving tube 5 on the main body base 1, and is connected with another binding post above leading to main body base 1.
As shown in Figure 5, housing parts comprises that one is socketed on the metal coating shell 6 on the described main body base 1.Metal coating shell 6 is socketed on main body base 1 upper surface, will comprise that the parts of described rectangular cylinder 2,808nm laser pumping light source 3, YVO4+PPLN laser crystal 4 and PD optical receiver 5 are put in the inner.
With feedback glass lens 7 from pack into the light hole of inclined plane groove of the front end end of shell, protect light hole and sealing, cover again the first half of main body base 1 with metal coating shell 6, laser beam is penetrated from the light hole of metal coating shell 6 leading portions, fall on the PD light receiving tube 5 as the reflect beams of laser light of sampling; The lower surface of metal coating shell 6 is connected with main body base 1 upper surface and seals, and is damaged to avoid main part.
Above content is the further description of the present invention being done in conjunction with concrete preferred implementation; can not assert that the specific embodiment of the present invention only limits to this; for the general technical staff of the technical field of the invention; without departing from the inventive concept of the premise; can also make some simple deduction or replace, all should be considered as belonging to the present invention and determine scope of patent protection by claims of submitting to.
Claims (7)
1. semiconductor pumped miniature laser pipe, comprise main body base (1) and place rectangular cylinder (2) on the main body base (1), be connected to the binding post (8) of main body base (1) below, it is characterized in that: described main body base (1) and rectangular cylinder (2) are the integral type mechanical connection; Rectangular cylinder (2) inboard is disposed with up and down 808nm laser pumping light source (3) and YVO4+PPLN laser crystal (4), is provided with PD optical receiver (5) on the main body base (1); Comprise that also one is socketed on the metal coating shell (6) on the described main body base (1).
2. according to semiconductor pumped microlaser claimed in claim 1, it is characterized in that: described main body base (1) is in vertical distribution with described rectangular cylinder (2).
3. according to semiconductor pumped microlaser claimed in claim 1, it is characterized in that: describedly be arranged at the inboard 808nm laser pumping light source (3) of rectangular cylinder (2) and respectively successively distribution from bottom to top of YVO4+PPLN laser crystal (4), the upper surface of the luminous point of 808nm laser pumping light source (3) and YVO4+PPLN laser crystal (4) over against.
4. according to semiconductor pumped microlaser claimed in claim 3, it is characterized in that: described 808nm laser pumping light source (3) is arranged on rectangular cylinder (2) and main body base (1) abutted surface, and 808nm laser pumping light source (3) is oppositely arranged with the PD optical receiver (5) that is arranged on the main body base (1).
5. according to semiconductor pumped microlaser claimed in claim 1, it is characterized in that: described binding post (8) joins with 808nm laser pumping light source (3), YVO4+PPLN laser crystal (4) and PD optical receiver (5) respectively.
6. according to semiconductor pumped microlaser claimed in claim 1; it is characterized in that: described metal coating shell (6) is socketed on main body base (1) upper surface, will comprise that the parts of described rectangular cylinder (2), 808nm laser pumping light source (3), YVO4+PPLN laser crystal (4) and PD optical receiver (5) are put in the inner.
7. according to semiconductor pumped microlaser claimed in claim 1; it is characterized in that: described metal coating shell (6) is the cylindrical cavity structure; be provided with the light hole for bright dipping on the top of this cavity body; the upper surface of light hole is the inclined plane, is coated with feedback glass lens (7) on the inclined plane.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104974441A CN102938533A (en) | 2012-11-28 | 2012-11-28 | Semiconductor pump micro laser tube |
| PCT/CN2012/086464 WO2014082348A1 (en) | 2012-11-28 | 2012-12-12 | Miniature laser tube of semiconductor laser pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104974441A CN102938533A (en) | 2012-11-28 | 2012-11-28 | Semiconductor pump micro laser tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102938533A true CN102938533A (en) | 2013-02-20 |
Family
ID=47697413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104974441A Pending CN102938533A (en) | 2012-11-28 | 2012-11-28 | Semiconductor pump micro laser tube |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102938533A (en) |
| WO (1) | WO2014082348A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019195086A (en) * | 2019-07-02 | 2019-11-07 | 日亜化学工業株式会社 | Optical component, manufacturing method of the same, light emitting device, and method of manufacturing the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173057A (en) * | 1996-04-26 | 1998-02-11 | 三井石油化学工业株式会社 | Laser dioder pumped solid-state laser apparatus |
| US20040182929A1 (en) * | 2003-03-18 | 2004-09-23 | Sony Corporation | Laser emitting module, window cap, laser pointer, and light emitting module |
| CN2667747Y (en) * | 2003-11-26 | 2004-12-29 | 上海冠威光电有限公司 | Enclosed micro green light laser |
| US20050063441A1 (en) * | 2003-09-22 | 2005-03-24 | Brown David C. | High density methods for producing diode-pumped micro lasers |
| US20050163176A1 (en) * | 2004-01-26 | 2005-07-28 | Li-Ning You | Green diode laser |
| US20080304526A1 (en) * | 2007-06-07 | 2008-12-11 | Park Sung-Soo | Green laser optical package |
-
2012
- 2012-11-28 CN CN2012104974441A patent/CN102938533A/en active Pending
- 2012-12-12 WO PCT/CN2012/086464 patent/WO2014082348A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173057A (en) * | 1996-04-26 | 1998-02-11 | 三井石油化学工业株式会社 | Laser dioder pumped solid-state laser apparatus |
| US20040182929A1 (en) * | 2003-03-18 | 2004-09-23 | Sony Corporation | Laser emitting module, window cap, laser pointer, and light emitting module |
| US20050063441A1 (en) * | 2003-09-22 | 2005-03-24 | Brown David C. | High density methods for producing diode-pumped micro lasers |
| CN2667747Y (en) * | 2003-11-26 | 2004-12-29 | 上海冠威光电有限公司 | Enclosed micro green light laser |
| US20050163176A1 (en) * | 2004-01-26 | 2005-07-28 | Li-Ning You | Green diode laser |
| US20080304526A1 (en) * | 2007-06-07 | 2008-12-11 | Park Sung-Soo | Green laser optical package |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019195086A (en) * | 2019-07-02 | 2019-11-07 | 日亜化学工業株式会社 | Optical component, manufacturing method of the same, light emitting device, and method of manufacturing the same |
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| Publication number | Publication date |
|---|---|
| WO2014082348A1 (en) | 2014-06-05 |
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Application publication date: 20130220 |