WO2014082348A1 - Miniature laser tube of semiconductor laser pump - Google Patents

Miniature laser tube of semiconductor laser pump Download PDF

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Publication number
WO2014082348A1
WO2014082348A1 PCT/CN2012/086464 CN2012086464W WO2014082348A1 WO 2014082348 A1 WO2014082348 A1 WO 2014082348A1 CN 2012086464 W CN2012086464 W CN 2012086464W WO 2014082348 A1 WO2014082348 A1 WO 2014082348A1
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WIPO (PCT)
Prior art keywords
laser
body base
main body
rectangular cylinder
ppln
Prior art date
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PCT/CN2012/086464
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French (fr)
Chinese (zh)
Inventor
吴彦林
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西安精英光电技术有限公司
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Publication of WO2014082348A1 publication Critical patent/WO2014082348A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109Frequency multiplication, e.g. harmonic generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/025Constructional details of solid state lasers, e.g. housings or mountings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1671Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673YVO4 [YVO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02257Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches

Definitions

  • the invention belongs to the field of optoelectronic technology, and in particular relates to a semiconductor pump micro laser tube integrated with miniaturization of a green light pump laser with a wavelength of 532 nm.
  • the technology conversion process is complicated.
  • the existing 532 nm laser implementation technology is realized by a combination of multiple lenses and components. Assembly and debugging between components requires high precision and complicated assembly process. It is difficult to assemble and limits productivity in high-volume production.
  • a laser tube with an output wavelength of 808 nm is first required, and the 808 nm laser tube beam is shaped by an optical lens to be coupled to the pump end face of the frequency doubling crystal. After output, a green light beam of 532 nm is output.
  • the entire system requires multiple component assembly combinations, not only for high material costs, but also due to the complexity of the assembly process. Sexuality also makes its process costly.
  • a semiconductor pumped micro laser tube comprises a main body base and a rectangular cylinder disposed on the base of the main body, and a binding post connected under the main body base, wherein the main body base and the rectangular cylinder are integrally mechanically connected; the inner side of the rectangular cylinder A 808 nm laser pumping light source and a YV04+PPLN laser crystal are arranged in this order, and a PD light receiver is disposed on the main body base; and a metal protective casing connected to the main body base is further included.
  • the body base is vertically distributed with the rectangular cylinder.
  • the 808 nm laser pumping light source and the YV04+PPLN laser crystal disposed inside the rectangular cylinder are respectively distributed from bottom to top, and the light emitting point of the 808 nm laser pumping light source is opposite to the pumped upper end surface of the YV04+PPLN laser crystal. .
  • the 808 nm laser pumping light source is disposed on a surface of the rectangular cylinder and the body base, and the 808 nm laser pumping light source is disposed opposite to the PD light receiver disposed on the body base.
  • the terminals are respectively connected to a 808 nm laser pumping source, a YV04+PPLN laser crystal, and a PD photoreceiver.
  • the metal protective casing is sleeved on the upper surface of the main body base, and components including the rectangular cylinder, the 808 nm laser pumping light source, the YV04+PPLN laser crystal, and the PD optical receiver are placed therein.
  • the metal protective casing has a cylindrical cavity structure, and a light-emitting hole for emitting light is disposed at an upper portion of the cavity body, and an upper end surface of the light-emitting hole is an inclined surface, and the inclined glass surface is covered on the inclined surface.
  • the invention has the advantages of compact structure, reasonable design, simple assembly and convenient implementation.
  • the invention integrates all the implementation processes of the 532 nanometer (green light) laser, directly realizes the micro laser tube with a wavelength of 532 nm, and greatly reduces the complex and large shape structure of the 532 nm laser. Miniaturization of 532nm pump lasers is achieved.
  • the invention directly uses the YV04+PPLN laser crystal to couple with the near source point of the 808 nm laser pumping source, omitting the shaping of the light source by the lens, thereby simplifying the process and saving cost.
  • the implementation cost of the invention is low, the power consumption of the green laser is reduced, the service life is long, the utility is strong, and the utility model is convenient for popularization and use.
  • the invention integrates the 808 nm laser pumping light source and the YV04+PPLN laser crystal on the inner surface of the rectangular cylinder, and the light-emitting point of the 808 nm laser pumping light source is opposite to the pumping end surface of the YV04+PPLN laser crystal and is on the same line.
  • the PD optical receiver on the base receives a 532 nm laser from a portion of the YV04+PPLN laser crystal. All devices are integrated in a small space to miniaturize the 532nm pump laser.
  • the main features of the present invention are: a laser pumped YV04+PPLN laser crystal emitted by 808nm LD emits a 532nm laser, and a mirror reflects a part of the 532nm laser to the PD receiver.
  • the PD receiver gives a signal adjustment according to the strength of the feedback 532nm laser.
  • the size of the pump laser is maintained to maintain the stability of the 532nm laser power.
  • the YV04+PPLN laser crystal can be used to greatly reduce the operating current of the 532nm laser.
  • the invention is a low-power miniature green laser with very practical value and has great market value.
  • Figure 1 is an exploded view of the structure of the present invention.
  • Figure 2 is a schematic view showing the structure of the main body of the present invention.
  • Figure 3 is a front view of Figure 2.
  • Figure 4 is a plan view of Figure 2.
  • Figure 5 is a schematic cross-sectional view showing the assembly of the invention.
  • the present invention includes a casing portion and a body portion.
  • the main body portion includes a circular body base 1 and a rectangular cylinder 2 placed on the main body base 1, and a terminal 8 (pin) is connected below the main body base 1, wherein: the main body base 1 and the rectangular column
  • the body 2 is an integral mechanical connection, and the main body base 1 is vertically distributed with the rectangular cylinder 2; as shown in FIG. 3, the inner side of the rectangular cylinder 2 is respectively provided with 808 nm laser pumping light source 3 and YV04+ from bottom to top.
  • the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the upper end surface of the YV04+PPLN laser crystal 4;
  • the main body base 1 is provided with a PD light receiver 5 (detection tube);
  • the 808 nm laser pumping light source 3 is set On the rectangular cylinder 2 where the rectangular cylinder 2 is in contact with the main body base 1, the 808 nm laser pumping light source 3 is disposed opposite to the PD light receiver 5 provided on the main body base 1.
  • the three terminals 8 are in electrical connection with the main body base 1, and the two are connected to the upper part of the main body base 1 through the insulating holes.
  • the binding posts 8 are respectively connected with the 808 nm laser pumping light source 3, YV04+PPLN.
  • the laser crystal 4 is connected to the PD optical receiver 5.
  • the rectangular column 2 provided on the upper side of the main body base 1 is connected to the main body base 1 at 90 degrees, and the two are mechanically integrally formed; the inner side of the rectangular cylinder 2 is a flat surface.
  • the other side of the main body base 1 corresponding to the rectangular cylinder 2 is mounted with the PD light receiving tube 5.
  • the 808 nm laser pumping light source 3 is mounted below the inner side of the rectangular cylinder 2, and the YV04+PPLN laser crystal 4 is oppositely mounted on the 808 nm laser pumping light source 3.
  • the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the end receiving surface of the YV04+PPLN laser crystal 4.
  • one electrode of the 808 nm laser pumping light source 3 is connected to the main body base 1, and the other electrode is connected to a terminal block above the main body base 1, which are in the same straight line;
  • the other side corresponding to the main body houses the PD light receiving tube 5 and is connected to another terminal that leads to the upper surface of the main body base 1.
  • the outer casing portion includes a metal protective casing 6 attached to the main body base 1.
  • the metal protective casing 6 is sleeved on the upper surface of the main body base 1, and the components including the rectangular cylinder 2, the 808 nm laser pumping light source 3, the YV04+PPLN laser crystal 4, and the PD optical receiver 5 are placed therein.
  • the metal protective casing 6 is a cylindrical cavity structure.
  • the upper part of the cavity body is provided with an opening with an inclined surface, the opening is a light exiting hole for emitting light, and the feedback glass lens 7 is placed at the optical hole, the metal protective casing
  • the lower end of the 6 is fitted on the upper surface of the main body base 1.
  • the feedback glass lens 7 is loaded from the front end of the outer casing into the light exit hole of the inclined groove, protects the light exit hole and is sealed, and then covers the upper half of the main body base 1 with the metal protective cover 6, so that the laser beam is from the metal protective casing. 6
  • the light exit hole of the front stage is emitted, and the reflected laser beam as a sample falls onto the PD light receiving tube 5; the lower end surface of the metal protective case 6 is connected to the upper surface of the main body base 1 and sealed to prevent the main body portion from being damaged.

Abstract

A miniature laser tube of a semiconductor laser pump comprises a main body base (1), a rectangular column body (2) disposed on the main body base (1), and a binding post (8) connected below the main body base (1). The main body base (1) and the rectangular column body (2) are in integrated mechanical connection. An 808-nm laser pump light source (3) and a YVO4+PPLN laser crystal (4) are successively disposed at the upper portion and the lower portion of the inner side of the rectangular column body (2). A PD light receiver (5) is disposed on the main body base (1). In addition, the miniature laser tube of the semiconductor laser pump comprises a metal protection case (6) sleeved on the main body base (1). According to the miniature laser tube of the semiconductor laser pump, by reducing outline dimensions of a 532-nm laser in the prior art, the miniature laser tube of the semiconductor laser pump has a compact structure and reasonable design, the 532-nm pump laser microminiaturization is successfully implemented, and the reliability and stability of the performance of the laser tube are improved, thereby meeting current demands for this kind of the laser tube on the market.

Description

半导体激光器泵浦的微型激光管 技术领域  Semiconductor laser pumped micro laser tube
本发明型属于光电技术领域, 尤其是涉及一种波长为 532nm 的绿光泵浦激 光器集成微型化的半导体泵浦微型激光管。  The invention belongs to the field of optoelectronic technology, and in particular relates to a semiconductor pump micro laser tube integrated with miniaturization of a green light pump laser with a wavelength of 532 nm.
背景技术 Background technique
半导体激光管由于其结构紧奏, 体积小, 技术转换工艺相对简单, 价格便 宜的特点, 在激光领域正被广泛的应用, 按波长分类, 现在市场上技术成熟的 激光管有紫光(405纳米); 蓝光 (450纳米); 红光及红外 (635纳米至 1310纳 米), 然而绿光 (532纳米) 在市场需求中依然是一个很大的需求但技术瓶颈未 能攻破的领域。现在市场上较为普遍的技术方法是应用 808纳米的激光管和 532 纳米的倍频晶体组合来实现的泵浦式激光器, 现有实现绿光的技术中存在以下 缺点和不足:  Due to its compact structure, small size, relatively simple technology conversion process, and low price, semiconductor laser tubes are widely used in the laser field. They are classified by wavelength, and now the mature laser tubes on the market have purple light (405 nm). Blue light (450 nm); red light and infrared (635 nm to 1310 nm), however, green light (532 nm) is still a large demand in the market demand but the technical bottleneck has not been broken. The more common technical method on the market today is a pump laser that uses a combination of a 808 nm laser tube and a 532 nm multiplier crystal. The existing shortcomings and deficiencies in the implementation of green light are:
1、 技术转换工艺复杂。 现有的 532纳米的激光实现技术要通过多个透镜和 零部件的组合实现, 零部件之间的装配调试要求精度较高, 装配过程复杂。 装 配难度大, 在大批量生产中, 限制了生产效率的提高。  1. The technology conversion process is complicated. The existing 532 nm laser implementation technology is realized by a combination of multiple lenses and components. Assembly and debugging between components requires high precision and complicated assembly process. It is difficult to assemble and limits productivity in high-volume production.
2、外形尺寸较大。半导体激光器的一个显著特点就是其体积小, 应用方便, 然而现在普遍采用的实现方法, 由于需要的零部件多, 由此带来的整个系统尺 寸的增加使得其在较小空间的应用受到了限制。  2. Large size. A remarkable feature of semiconductor lasers is their small size and convenient application. However, the commonly used implementation methods, due to the large number of components required, have led to an increase in the size of the entire system, which limits its application in smaller spaces. .
3、 实现成本较高。 实现输出波长为 532纳米的激光, 首先需要一个输出波 长为 808纳米激光管, 再通过光学透镜对 808纳米的激光管光束进行整形, 使 其耦合到倍频晶体的泵浦端面, 经过晶体倍频后输出 532 纳米的绿光光束。 整 个系统需要多个零部件装配组合, 不仅材料成本高, 而且由于装配过程的复杂 性, 也使其过程成本较高。 3. The realization cost is higher. To achieve a laser with an output wavelength of 532 nm, a laser tube with an output wavelength of 808 nm is first required, and the 808 nm laser tube beam is shaped by an optical lens to be coupled to the pump end face of the frequency doubling crystal. After output, a green light beam of 532 nm is output. The entire system requires multiple component assembly combinations, not only for high material costs, but also due to the complexity of the assembly process. Sexuality also makes its process costly.
4、 可靠性不高。 中间环节越多越容易影响最终的性能, 由于工艺需要, 系 统中大部分采用胶固来实现零件之间的连接, 透镜及晶体一旦出现松动, 整个 系统见陷入瘫痪或报废状态。  4. Reliability is not high. The more intermediate links, the more likely it is to affect the final performance. Due to the process requirements, most of the system is glued to achieve the connection between the parts. Once the lens and crystal are loose, the whole system is in a state of paralysis or scrap.
发明内容 Summary of the invention
本发明的目的是提供一种半导体泵浦微型激光管, 该激光管通过减小现 有技术实现的 532纳米激光器的外形尺寸, 其结构紧凑, 应用更为广泛; 其 解决了现有工艺的复杂性, 提高了该激光管性能的可靠性和稳定性; 满足了 目前市场对此类激光管的需求。  It is an object of the present invention to provide a semiconductor pumped micro laser tube which is compact and more widely used by reducing the external dimensions of a 532 nm laser realized in the prior art; Sexuality improves the reliability and stability of the performance of the laser tube; it satisfies the current market demand for such laser tubes.
本发明的目的是通过下述技术方案来实现的。  The object of the present invention is achieved by the following technical solutions.
一种半导体泵浦微型激光管, 包括主体底座和置于主体底座上的矩形柱体, 连接在主体底座下方的接线柱, 所述主体底座和矩形柱体为一体式机械连接; 矩形柱体内侧上下依次设置有 808nm激光泵浦光源和 YV04+PPLN激光晶体, 主 体底座上设置有 PD光接收器;还包括一套接于所述主体底座上的金属保护外壳。  A semiconductor pumped micro laser tube comprises a main body base and a rectangular cylinder disposed on the base of the main body, and a binding post connected under the main body base, wherein the main body base and the rectangular cylinder are integrally mechanically connected; the inner side of the rectangular cylinder A 808 nm laser pumping light source and a YV04+PPLN laser crystal are arranged in this order, and a PD light receiver is disposed on the main body base; and a metal protective casing connected to the main body base is further included.
进一步地, 所述激光管中:  Further, in the laser tube:
所述主体底座与所述矩形柱体呈垂直分布。  The body base is vertically distributed with the rectangular cylinder.
所述设置于矩形柱体内侧的 808nm激光泵浦光源和 YV04+PPLN激光晶体分 别自下而上依次分布, 808nm激光泵浦光源的发光点与 YV04+PPLN激光晶体的泵 浦的上端面正对。  The 808 nm laser pumping light source and the YV04+PPLN laser crystal disposed inside the rectangular cylinder are respectively distributed from bottom to top, and the light emitting point of the 808 nm laser pumping light source is opposite to the pumped upper end surface of the YV04+PPLN laser crystal. .
所述 808nm激光泵浦光源设置在矩形柱体与主体底座相接面上, 808nm激光 泵浦光源与设置在主体底座上的 PD光接收器相对设置。  The 808 nm laser pumping light source is disposed on a surface of the rectangular cylinder and the body base, and the 808 nm laser pumping light source is disposed opposite to the PD light receiver disposed on the body base.
所述接线柱分别与 808nm激光泵浦光源、 YV04+PPLN激光晶体和 PD光接收 器相接。 所述金属保护外壳套接于主体底座上表面, 将包括所述矩形柱体、 808nm激 光泵浦光源、 YV04+PPLN激光晶体和 PD光接收器在内的部件置于其内。 The terminals are respectively connected to a 808 nm laser pumping source, a YV04+PPLN laser crystal, and a PD photoreceiver. The metal protective casing is sleeved on the upper surface of the main body base, and components including the rectangular cylinder, the 808 nm laser pumping light source, the YV04+PPLN laser crystal, and the PD optical receiver are placed therein.
所述金属保护外壳为圆柱体空腔结构, 在该空腔体的上部设有用于出光的 出光孔, 出光孔的上端面为倾斜面, 在倾斜面上覆盖有反馈玻璃镜片。  The metal protective casing has a cylindrical cavity structure, and a light-emitting hole for emitting light is disposed at an upper portion of the cavity body, and an upper end surface of the light-emitting hole is an inclined surface, and the inclined glass surface is covered on the inclined surface.
本发明与现有技术相比具有以下优点:  The present invention has the following advantages over the prior art:
1、 本发明的结构紧凑, 设计合理, 装配简单, 实现方便。  1. The invention has the advantages of compact structure, reasonable design, simple assembly and convenient implementation.
2、 本发明将 532纳米 (绿光) 激光的所有实现过程都集成封装到一起, 直 接实现了波长 532纳米的微型激光管, 大大的缩小了实现 532纳米的激光器复 杂而庞大的外形结构, 成功地实现了 532nm泵浦激光器微型化。  2. The invention integrates all the implementation processes of the 532 nanometer (green light) laser, directly realizes the micro laser tube with a wavelength of 532 nm, and greatly reduces the complex and large shape structure of the 532 nm laser. Miniaturization of 532nm pump lasers is achieved.
3、本发明直接用 YV04+PPLN激光晶体与 808nm激光泵浦光源的近源点耦合, 省略了用透镜对光源的整形环节, 由此简化了工艺, 节约了成本。  3. The invention directly uses the YV04+PPLN laser crystal to couple with the near source point of the 808 nm laser pumping source, omitting the shaping of the light source by the lens, thereby simplifying the process and saving cost.
4、 本发明的实现成本低, 降低了绿光激光器的功耗, 使用寿命长, 实用 性强, 便于推广使用。  4. The implementation cost of the invention is low, the power consumption of the green laser is reduced, the service life is long, the utility is strong, and the utility model is convenient for popularization and use.
本发明将 808nm激光泵浦光源和 YV04+PPLN激光晶体都集成安装在矩形柱 体的内表面, 808nm激光泵浦光源的发光点正对 YV04+PPLN激光晶体的泵浦端面 并在同一直线上,底座上 PD光接收器接收部分 YV04+PPLN激光晶体发出的 532nm 激光。 所有器件集成在一个很小的空间内, 以实现 532nm泵浦激光器的微型化。  The invention integrates the 808 nm laser pumping light source and the YV04+PPLN laser crystal on the inner surface of the rectangular cylinder, and the light-emitting point of the 808 nm laser pumping light source is opposite to the pumping end surface of the YV04+PPLN laser crystal and is on the same line. The PD optical receiver on the base receives a 532 nm laser from a portion of the YV04+PPLN laser crystal. All devices are integrated in a small space to miniaturize the 532nm pump laser.
本发明主要特点是: 808nm LD 发出的激光泵浦 YV04+PPLN激光晶体发出 532nm激光, 并经过反射镜反射一部分 532nm激光到 PD接收器, PD接收器根据 反馈 532nm激光的强弱给出信号调整 808nm泵浦激光的的大小, 以保持 532nm 激光功率的稳定性。 并选用 YV04+PPLN激光晶体可以大大降低 532nm激光器的 工作电流。 该发明是一种实用价值非常大的低功耗微型绿光激光器, 有巨大的 市场价值。 附图说明 The main features of the present invention are: a laser pumped YV04+PPLN laser crystal emitted by 808nm LD emits a 532nm laser, and a mirror reflects a part of the 532nm laser to the PD receiver. The PD receiver gives a signal adjustment according to the strength of the feedback 532nm laser. The size of the pump laser is maintained to maintain the stability of the 532nm laser power. The YV04+PPLN laser crystal can be used to greatly reduce the operating current of the 532nm laser. The invention is a low-power miniature green laser with very practical value and has great market value. DRAWINGS
图 1为本发明的结构分解图。  Figure 1 is an exploded view of the structure of the present invention.
图 2为本发明的主体部分结构示意图。  Figure 2 is a schematic view showing the structure of the main body of the present invention.
图 3为图 2的主视图。  Figure 3 is a front view of Figure 2.
图 4为图 2的俯视图。  Figure 4 is a plan view of Figure 2.
图 5为发明的装配剖视结构示意图。  Figure 5 is a schematic cross-sectional view showing the assembly of the invention.
附图标记说明: Description of the reference signs:
1一主体底座; 2—矩形柱体; 3— 808nm激光泵浦光源; 1 - main body base; 2 - rectangular cylinder; 3 - 808nm laser pumping light source;
4— YV04+PPLN激光晶体; 5— PD光接收管; 6—金属保护外壳; 4—YV04+PPLN laser crystal; 5—PD light receiving tube; 6—metal protective casing;
7—反馈玻璃镜片 8—接线柱 (管脚) 7—Feedback glass lens 8—Terminal post (pin)
具体实施方式 detailed description
下面通过附图和实施例, 对本发明的技术方案做进一步的详细描述。  The technical solution of the present invention will be further described in detail below through the accompanying drawings and embodiments.
如图 1所示, 本实发明包括外壳部分和主体部分。  As shown in Fig. 1, the present invention includes a casing portion and a body portion.
如图 2所示, 主体部分包括圆形主体底座 1和置于主体底座 1上的矩形柱 体 2, 在主体底座 1下方连接有接线柱 8 (管脚), 其中: 主体底座 1和矩形柱 体 2为一体式机械连接, 主体底座 1与所述矩形柱体 2呈垂直分布; 见图 3所 示,矩形柱体 2内侧分别自下而上依次设置有 808nm激光泵浦光源 3和 YV04+PPLN 激光晶体 4, 808nm激光泵浦光源 3的发光点与 YV04+PPLN激光晶体 4的上端面 正对; 主体底座 1上设置有 PD光接收器 5 (检测管); 808nm激光泵浦光源 3设 置在矩形柱体 2与主体底座 1相接的矩形柱体 2上, 808nm激光泵浦光源 3与设 置在主体底座 1上的 PD光接收器 5相对设置。  As shown in FIG. 2, the main body portion includes a circular body base 1 and a rectangular cylinder 2 placed on the main body base 1, and a terminal 8 (pin) is connected below the main body base 1, wherein: the main body base 1 and the rectangular column The body 2 is an integral mechanical connection, and the main body base 1 is vertically distributed with the rectangular cylinder 2; as shown in FIG. 3, the inner side of the rectangular cylinder 2 is respectively provided with 808 nm laser pumping light source 3 and YV04+ from bottom to top. PPLN laser crystal 4, the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the upper end surface of the YV04+PPLN laser crystal 4; the main body base 1 is provided with a PD light receiver 5 (detection tube); the 808 nm laser pumping light source 3 is set On the rectangular cylinder 2 where the rectangular cylinder 2 is in contact with the main body base 1, the 808 nm laser pumping light source 3 is disposed opposite to the PD light receiver 5 provided on the main body base 1.
三根接线柱 8—根与主体底座 1处于电性能导通连接状态, 两根通过绝缘 孔通往主体底座 1的上方, 接线柱 8分别与 808nm激光泵浦光源 3、 YV04+PPLN 激光晶体 4和 PD光接收器 5相接。 The three terminals 8 are in electrical connection with the main body base 1, and the two are connected to the upper part of the main body base 1 through the insulating holes. The binding posts 8 are respectively connected with the 808 nm laser pumping light source 3, YV04+PPLN. The laser crystal 4 is connected to the PD optical receiver 5.
如图 3所示,在本实施例中,主体底座 1上面一侧所设矩形柱体 2与主体底 座 1呈 90度连接, 两者为机械一体成型; 矩形柱体 2的内侧为一平面, 以方便 808nm激光泵浦光源 3和 YV04+PPLN激光晶体 4的安放; 主体底座 1上表面与 矩形柱体 2对应的另一侧安装 PD光接收管 5。  As shown in FIG. 3, in the present embodiment, the rectangular column 2 provided on the upper side of the main body base 1 is connected to the main body base 1 at 90 degrees, and the two are mechanically integrally formed; the inner side of the rectangular cylinder 2 is a flat surface. In order to facilitate the placement of the 808 nm laser pumping light source 3 and the YV04+PPLN laser crystal 4; the other side of the main body base 1 corresponding to the rectangular cylinder 2 is mounted with the PD light receiving tube 5.
如图 3所示,在本发明的实施例中,将 808nm激光泵浦光源 3安装在矩形柱 体 2内侧的下方, YV04+PPLN激光晶体 4相对的安装在所述 808nm激光泵浦光 源 3的上方, 使 808nm激光泵浦光源 3的发光点正对 YV04+PPLN激光晶体 4的 端受光面。 如图 4所示, 808nm激光泵浦光源 3的一个电极与主体底座 1连接, 另一个电极与通往主体底座 1上方的一根接线柱连接,两者并处于同一直线上; 主体底座 1上与主体对应的另一侧安置 PD光接收管 5, 并与通往主体底座 1上 面的另一个接线柱连接。  As shown in FIG. 3, in the embodiment of the present invention, the 808 nm laser pumping light source 3 is mounted below the inner side of the rectangular cylinder 2, and the YV04+PPLN laser crystal 4 is oppositely mounted on the 808 nm laser pumping light source 3. Above, the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the end receiving surface of the YV04+PPLN laser crystal 4. As shown in FIG. 4, one electrode of the 808 nm laser pumping light source 3 is connected to the main body base 1, and the other electrode is connected to a terminal block above the main body base 1, which are in the same straight line; The other side corresponding to the main body houses the PD light receiving tube 5 and is connected to another terminal that leads to the upper surface of the main body base 1.
如图 5所示,外壳部分包括一套接于所述主体底座 1上的金属保护外壳 6。 金属保护外壳 6套接于主体底座 1上表面,将包括所述矩形柱体 2、 808nm激光 泵浦光源 3、 YV04+PPLN激光晶体 4和 PD光接收器 5在内的部件置于其内。  As shown in Fig. 5, the outer casing portion includes a metal protective casing 6 attached to the main body base 1. The metal protective casing 6 is sleeved on the upper surface of the main body base 1, and the components including the rectangular cylinder 2, the 808 nm laser pumping light source 3, the YV04+PPLN laser crystal 4, and the PD optical receiver 5 are placed therein.
金属保护外壳 6 为圆柱体空腔结构, 在该空腔体的上部设有一表面呈倾斜 面的开口, 开口为用于出光的出光孔, 反馈玻璃镜片 7被置于光孔处, 金属保 护外壳 6下端套装在主体底座 1的上表面。  The metal protective casing 6 is a cylindrical cavity structure. The upper part of the cavity body is provided with an opening with an inclined surface, the opening is a light exiting hole for emitting light, and the feedback glass lens 7 is placed at the optical hole, the metal protective casing The lower end of the 6 is fitted on the upper surface of the main body base 1.
将反馈玻璃镜片 7从外壳的前端端装入斜面凹槽的出光孔处,护住出光孔并 密封, 再用金属保护外壳 6盖住主体底座 1的上半部分, 使激光光束从金属保 护外壳 6前段的出光孔射出, 作为采样的反射激光光束落到 PD光接收管 5上; 金属保护外壳 6的下端面与主体底座 1上表面连接并密封, 以避免主体部分受 到损坏。 以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明, 不 能认定本发明的具体实施方式仅限于此, 对于本发明所属技术领域的普通技术 人员来说, 在不脱离本发明构思的前提下, 还可以做出若干简单的推演或替换, 都应当视为属于本发明由所提交的权利要求书确定专利保护范围。 The feedback glass lens 7 is loaded from the front end of the outer casing into the light exit hole of the inclined groove, protects the light exit hole and is sealed, and then covers the upper half of the main body base 1 with the metal protective cover 6, so that the laser beam is from the metal protective casing. 6 The light exit hole of the front stage is emitted, and the reflected laser beam as a sample falls onto the PD light receiving tube 5; the lower end surface of the metal protective case 6 is connected to the upper surface of the main body base 1 and sealed to prevent the main body portion from being damaged. The above is a detailed description of the present invention in conjunction with the specific preferred embodiments. It is not to be understood that the specific embodiments of the present invention are limited thereto, and those skilled in the art to which the present invention pertains, without departing from the scope of the present invention. In the following, a number of simple derivations or substitutions may be made, which should be considered as belonging to the invention as defined by the appended claims.

Claims

权 利 要 求 书 Claim
1.一种半导体泵浦微型激光管, 包括主体底座 (1) 和置于主体底座 (1) 上的矩形柱体 (2), 连接在主体底座 (1) 下方的接线柱 (8), 其特征在于: 所 述主体底座 (1) 和矩形柱体 (2) 为一体式机械连接; 矩形柱体 (2) 内侧上下 依次设置有 808nm激光泵浦光源(3)和 YV04+PPLN激光晶体(4),主体底座(1) 上设置有 PD光接收器 (5); 还包括一套接于所述主体底座 (1) 上的金属保护 外壳 (6)。  A semiconductor pumped micro laser tube comprising a body base (1) and a rectangular cylinder (2) placed on the body base (1), a terminal (8) connected below the body base (1), The utility model is characterized in that: the main body base (1) and the rectangular cylinder body (2) are an integral mechanical connection; the inner side of the rectangular cylinder body (2) is provided with a 808 nm laser pumping light source (3) and a YV04+PPLN laser crystal (4). The main body base (1) is provided with a PD light receiver (5); and further comprises a metal protective casing (6) attached to the main body base (1).
2.按照权利要求 1 所述的半导体泵浦微型激光管, 其特征在于: 所述主体 底座 (1) 与所述矩形柱体 (2) 呈垂直分布。  A semiconductor pumped micro laser tube according to claim 1, wherein: said main body base (1) is vertically distributed with said rectangular cylinder (2).
3.按照权利要求 1 所述的半导体泵浦微型激光管, 其特征在于: 所述设置 于矩形柱体 (2) 内侧的 808nm激光泵浦光源 (3) 和 YV04+PPLN激光晶体 (4) 分别自下而上依次分布, 808nm激光泵浦光源 (3) 的发光点与 YV04+PPLN激光 晶体 (4) 的上端面正对。  The semiconductor pumping micro laser tube according to claim 1, wherein: 808 nm laser pumping source (3) and YV04+PPLN laser crystal (4) disposed inside the rectangular cylinder (2) are respectively From bottom to top, the 808nm laser pumping source (3) has a light-emitting point that is opposite to the upper end of the YV04+PPLN laser crystal (4).
4.按照权利要求 3所述的半导体泵浦微型激光管, 其特征在于: 所述 808nm 激光泵浦光源 (3) 设置在矩形柱体 (2) 与主体底座 (1) 相接面上, 808nm激 光泵浦光源 (3) 与设置在主体底座 (1) 上的 PD光接收器 (5) 相对设置。  The semiconductor pumping micro laser tube according to claim 3, wherein: the 808 nm laser pumping light source (3) is disposed on a surface of the rectangular cylinder (2) and the body base (1), 808 nm The laser pumping light source (3) is placed opposite the PD light receiver (5) provided on the main body base (1).
5.按照权利要求 1 所述的半导体泵浦微型激光管, 其特征在于: 所述接线 柱 (8) 分别与 808nm激光泵浦光源 (3)、 YV04+PPLN激光晶体 (4) 和 PD光接 收器 (5) 相接。  The semiconductor pumped micro laser tube according to claim 1, wherein: said terminal (8) is respectively coupled with a 808 nm laser pumping source (3), a YV04+PPLN laser crystal (4), and a PD light receiving unit. The device (5) is connected.
6.按照权利要求 1 所述的半导体泵浦微型激光管, 其特征在于: 所述金属 保护外壳 (6) 套接于主体底座 (1) 上表面, 将包括所述矩形柱体 (2)、 808nm 激光泵浦光源 (3)、 YV04+PPLN激光晶体 (4) 和 PD光接收器 (5) 在内的部件 置于其内。  The semiconductor pumped micro laser tube according to claim 1, wherein: the metal protective casing (6) is sleeved on an upper surface of the main body base (1), and includes the rectangular cylinder (2), The components inside the 808nm laser pumping source (3), YV04+PPLN laser crystal (4) and PD light receiver (5) are placed inside.
7.按照权利要求 1 所述的半导体泵浦微型激光管, 其特征在于: 所述金属 The semiconductor pumped micro laser tube according to claim 1, wherein: said metal
权 利 要 求 书 Claims
保护外壳 (6 ) 为圆柱体空腔结构, 在该空腔体的上部设有用于出光的出光孔, 出光孔的上端面为倾斜面, 在倾斜面上覆盖有反馈玻璃镜片 (7)。 The protective casing (6) is a cylindrical cavity structure, and an exit hole for emitting light is provided at an upper portion of the cavity body, and an upper end surface of the light exit hole is an inclined surface, and a feedback glass lens (7) is covered on the inclined surface.
PCT/CN2012/086464 2012-11-28 2012-12-12 Miniature laser tube of semiconductor laser pump WO2014082348A1 (en)

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