WO2014082348A1 - Tube laser miniature de pompe laser à semi-conducteur - Google Patents

Tube laser miniature de pompe laser à semi-conducteur Download PDF

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Publication number
WO2014082348A1
WO2014082348A1 PCT/CN2012/086464 CN2012086464W WO2014082348A1 WO 2014082348 A1 WO2014082348 A1 WO 2014082348A1 CN 2012086464 W CN2012086464 W CN 2012086464W WO 2014082348 A1 WO2014082348 A1 WO 2014082348A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
body base
main body
rectangular cylinder
ppln
Prior art date
Application number
PCT/CN2012/086464
Other languages
English (en)
Chinese (zh)
Inventor
吴彦林
Original Assignee
西安精英光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 西安精英光电技术有限公司 filed Critical 西安精英光电技术有限公司
Publication of WO2014082348A1 publication Critical patent/WO2014082348A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Definitions

  • the invention belongs to the field of optoelectronic technology, and in particular relates to a semiconductor pump micro laser tube integrated with miniaturization of a green light pump laser with a wavelength of 532 nm.
  • the technology conversion process is complicated.
  • the existing 532 nm laser implementation technology is realized by a combination of multiple lenses and components. Assembly and debugging between components requires high precision and complicated assembly process. It is difficult to assemble and limits productivity in high-volume production.
  • a laser tube with an output wavelength of 808 nm is first required, and the 808 nm laser tube beam is shaped by an optical lens to be coupled to the pump end face of the frequency doubling crystal. After output, a green light beam of 532 nm is output.
  • the entire system requires multiple component assembly combinations, not only for high material costs, but also due to the complexity of the assembly process. Sexuality also makes its process costly.
  • a semiconductor pumped micro laser tube comprises a main body base and a rectangular cylinder disposed on the base of the main body, and a binding post connected under the main body base, wherein the main body base and the rectangular cylinder are integrally mechanically connected; the inner side of the rectangular cylinder A 808 nm laser pumping light source and a YV04+PPLN laser crystal are arranged in this order, and a PD light receiver is disposed on the main body base; and a metal protective casing connected to the main body base is further included.
  • the body base is vertically distributed with the rectangular cylinder.
  • the 808 nm laser pumping light source and the YV04+PPLN laser crystal disposed inside the rectangular cylinder are respectively distributed from bottom to top, and the light emitting point of the 808 nm laser pumping light source is opposite to the pumped upper end surface of the YV04+PPLN laser crystal. .
  • the 808 nm laser pumping light source is disposed on a surface of the rectangular cylinder and the body base, and the 808 nm laser pumping light source is disposed opposite to the PD light receiver disposed on the body base.
  • the terminals are respectively connected to a 808 nm laser pumping source, a YV04+PPLN laser crystal, and a PD photoreceiver.
  • the metal protective casing is sleeved on the upper surface of the main body base, and components including the rectangular cylinder, the 808 nm laser pumping light source, the YV04+PPLN laser crystal, and the PD optical receiver are placed therein.
  • the metal protective casing has a cylindrical cavity structure, and a light-emitting hole for emitting light is disposed at an upper portion of the cavity body, and an upper end surface of the light-emitting hole is an inclined surface, and the inclined glass surface is covered on the inclined surface.
  • the invention has the advantages of compact structure, reasonable design, simple assembly and convenient implementation.
  • the invention integrates all the implementation processes of the 532 nanometer (green light) laser, directly realizes the micro laser tube with a wavelength of 532 nm, and greatly reduces the complex and large shape structure of the 532 nm laser. Miniaturization of 532nm pump lasers is achieved.
  • the invention directly uses the YV04+PPLN laser crystal to couple with the near source point of the 808 nm laser pumping source, omitting the shaping of the light source by the lens, thereby simplifying the process and saving cost.
  • the implementation cost of the invention is low, the power consumption of the green laser is reduced, the service life is long, the utility is strong, and the utility model is convenient for popularization and use.
  • the invention integrates the 808 nm laser pumping light source and the YV04+PPLN laser crystal on the inner surface of the rectangular cylinder, and the light-emitting point of the 808 nm laser pumping light source is opposite to the pumping end surface of the YV04+PPLN laser crystal and is on the same line.
  • the PD optical receiver on the base receives a 532 nm laser from a portion of the YV04+PPLN laser crystal. All devices are integrated in a small space to miniaturize the 532nm pump laser.
  • the main features of the present invention are: a laser pumped YV04+PPLN laser crystal emitted by 808nm LD emits a 532nm laser, and a mirror reflects a part of the 532nm laser to the PD receiver.
  • the PD receiver gives a signal adjustment according to the strength of the feedback 532nm laser.
  • the size of the pump laser is maintained to maintain the stability of the 532nm laser power.
  • the YV04+PPLN laser crystal can be used to greatly reduce the operating current of the 532nm laser.
  • the invention is a low-power miniature green laser with very practical value and has great market value.
  • Figure 1 is an exploded view of the structure of the present invention.
  • Figure 2 is a schematic view showing the structure of the main body of the present invention.
  • Figure 3 is a front view of Figure 2.
  • Figure 4 is a plan view of Figure 2.
  • Figure 5 is a schematic cross-sectional view showing the assembly of the invention.
  • the present invention includes a casing portion and a body portion.
  • the main body portion includes a circular body base 1 and a rectangular cylinder 2 placed on the main body base 1, and a terminal 8 (pin) is connected below the main body base 1, wherein: the main body base 1 and the rectangular column
  • the body 2 is an integral mechanical connection, and the main body base 1 is vertically distributed with the rectangular cylinder 2; as shown in FIG. 3, the inner side of the rectangular cylinder 2 is respectively provided with 808 nm laser pumping light source 3 and YV04+ from bottom to top.
  • the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the upper end surface of the YV04+PPLN laser crystal 4;
  • the main body base 1 is provided with a PD light receiver 5 (detection tube);
  • the 808 nm laser pumping light source 3 is set On the rectangular cylinder 2 where the rectangular cylinder 2 is in contact with the main body base 1, the 808 nm laser pumping light source 3 is disposed opposite to the PD light receiver 5 provided on the main body base 1.
  • the three terminals 8 are in electrical connection with the main body base 1, and the two are connected to the upper part of the main body base 1 through the insulating holes.
  • the binding posts 8 are respectively connected with the 808 nm laser pumping light source 3, YV04+PPLN.
  • the laser crystal 4 is connected to the PD optical receiver 5.
  • the rectangular column 2 provided on the upper side of the main body base 1 is connected to the main body base 1 at 90 degrees, and the two are mechanically integrally formed; the inner side of the rectangular cylinder 2 is a flat surface.
  • the other side of the main body base 1 corresponding to the rectangular cylinder 2 is mounted with the PD light receiving tube 5.
  • the 808 nm laser pumping light source 3 is mounted below the inner side of the rectangular cylinder 2, and the YV04+PPLN laser crystal 4 is oppositely mounted on the 808 nm laser pumping light source 3.
  • the light-emitting point of the 808 nm laser pumping light source 3 is opposite to the end receiving surface of the YV04+PPLN laser crystal 4.
  • one electrode of the 808 nm laser pumping light source 3 is connected to the main body base 1, and the other electrode is connected to a terminal block above the main body base 1, which are in the same straight line;
  • the other side corresponding to the main body houses the PD light receiving tube 5 and is connected to another terminal that leads to the upper surface of the main body base 1.
  • the outer casing portion includes a metal protective casing 6 attached to the main body base 1.
  • the metal protective casing 6 is sleeved on the upper surface of the main body base 1, and the components including the rectangular cylinder 2, the 808 nm laser pumping light source 3, the YV04+PPLN laser crystal 4, and the PD optical receiver 5 are placed therein.
  • the metal protective casing 6 is a cylindrical cavity structure.
  • the upper part of the cavity body is provided with an opening with an inclined surface, the opening is a light exiting hole for emitting light, and the feedback glass lens 7 is placed at the optical hole, the metal protective casing
  • the lower end of the 6 is fitted on the upper surface of the main body base 1.
  • the feedback glass lens 7 is loaded from the front end of the outer casing into the light exit hole of the inclined groove, protects the light exit hole and is sealed, and then covers the upper half of the main body base 1 with the metal protective cover 6, so that the laser beam is from the metal protective casing. 6
  • the light exit hole of the front stage is emitted, and the reflected laser beam as a sample falls onto the PD light receiving tube 5; the lower end surface of the metal protective case 6 is connected to the upper surface of the main body base 1 and sealed to prevent the main body portion from being damaged.

Abstract

La présente invention concerne un tube laser miniature d'une pompe laser à semi-conducteur. Ledit tube laser miniature comprend une base de corps principale (1), un corps en colonne rectangulaire (2) disposé sur la base de corps principale (1), et un montant de liaison (8) raccordé sous la base de corps principale (1). La base de corps principale (1) et le corps en colonne rectangulaire (2) sont en raccordement mécanique intégré. Une source lumineuse à pompe laser de 808 nm (3) et un cristal laser YVO4+PPLN (4) sont disposés successivement dans la partie supérieure et la partie inférieure du côté intérieur du corps en colonne rectangulaire (2). Un récepteur de lumière PD (5) est disposé sur la base de corps principale (1). En outre, le tube laser miniature de la pompe laser à semi-conducteur comprend un boîtier de protection métallique (6) emmanché sur la base de corps principale (1). Selon le tube laser miniature de la pompe laser à semi-conducteur, en réduisant des dimensions de contour d'un laser de 532 nm dans l'état de la technique, le tube laser miniature de la pompe laser à semi-conducteur présente une structure compacte et une conception raisonnable, la microminiaturisation de pompe laser à 532 nm est réalisée avec succès, et la fiabilité et la stabilité des performances du tube laser sont améliorées, satisfaisant ainsi aux exigences actuelles pour ce type de tube laser sur le marché.
PCT/CN2012/086464 2012-11-28 2012-12-12 Tube laser miniature de pompe laser à semi-conducteur WO2014082348A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2012104974441A CN102938533A (zh) 2012-11-28 2012-11-28 半导体泵浦微型激光管
CN201210497444.1 2012-11-28

Publications (1)

Publication Number Publication Date
WO2014082348A1 true WO2014082348A1 (fr) 2014-06-05

Family

ID=47697413

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/086464 WO2014082348A1 (fr) 2012-11-28 2012-12-12 Tube laser miniature de pompe laser à semi-conducteur

Country Status (2)

Country Link
CN (1) CN102938533A (fr)
WO (1) WO2014082348A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6784312B2 (ja) * 2019-07-02 2020-11-11 日亜化学工業株式会社 光部品及びその製造方法ならびに発光装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173057A (zh) * 1996-04-26 1998-02-11 三井石油化学工业株式会社 激光二极管激励的固态激光装置
US20040182929A1 (en) * 2003-03-18 2004-09-23 Sony Corporation Laser emitting module, window cap, laser pointer, and light emitting module
CN2667747Y (zh) * 2003-11-26 2004-12-29 上海冠威光电有限公司 微型封装的绿光激光器
US20050063441A1 (en) * 2003-09-22 2005-03-24 Brown David C. High density methods for producing diode-pumped micro lasers
US20050163176A1 (en) * 2004-01-26 2005-07-28 Li-Ning You Green diode laser
US20080304526A1 (en) * 2007-06-07 2008-12-11 Park Sung-Soo Green laser optical package

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173057A (zh) * 1996-04-26 1998-02-11 三井石油化学工业株式会社 激光二极管激励的固态激光装置
US20040182929A1 (en) * 2003-03-18 2004-09-23 Sony Corporation Laser emitting module, window cap, laser pointer, and light emitting module
US20050063441A1 (en) * 2003-09-22 2005-03-24 Brown David C. High density methods for producing diode-pumped micro lasers
CN2667747Y (zh) * 2003-11-26 2004-12-29 上海冠威光电有限公司 微型封装的绿光激光器
US20050163176A1 (en) * 2004-01-26 2005-07-28 Li-Ning You Green diode laser
US20080304526A1 (en) * 2007-06-07 2008-12-11 Park Sung-Soo Green laser optical package

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Publication number Publication date
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