CN2571773Y - Thermal field device for crystal growth - Google Patents
Thermal field device for crystal growth Download PDFInfo
- Publication number
- CN2571773Y CN2571773Y CN 02260743 CN02260743U CN2571773Y CN 2571773 Y CN2571773 Y CN 2571773Y CN 02260743 CN02260743 CN 02260743 CN 02260743 U CN02260743 U CN 02260743U CN 2571773 Y CN2571773 Y CN 2571773Y
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- thermal field
- field device
- crystal growth
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- thermal
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Abstract
The utility model discloses a thermal field device for a crystal growing furnace with a medium frequency induction heating pulling method, which is characterized in that a thermal insulation layer of the thermal field device uses the combined fixed structure. The outer layer (1) is made into a straight drum with thin wall by hard refractory materials, and an internal lining (3) is made into an inverted cone drum with thin wall by hard refractory materials. An upper opening of the inverted cone drum is large, and a lower bottom is small. The periphery between the outer layer (1) and the internal lining (3) is filled with anti-high temperature thermal insulating materials (2), and the shape of a platinum crucible can be made into an inverted cone drum shape matched with the internal lining (3). The platinum crucible is used as a heater. The thermal field device has the characteristics of convenient operation, low pollution possibility for raw materials, long service life, low power consumption, stable thermal field, and lightness, is good for weighing a lower controlled diameter, and is suitable for the growth of piezoelectricity or optical grade high temperature oxide.
Description
Technical field
The utility model relates to a kind of thermal field device that is used for Frequency Induction Heating, particularly a kind of crystal growth thermal field device.
Background technology
Crystal growth thermal field device is the important component part of crystal pulling method monocrystal growing furnace, and it provides the thermal field environment of crystal growth, is applicable to oxide crystals such as growth Lithium niobium trioxide, lithium tantalate, LGS.The thermal field device generally is made of three parts: inductor block (coil), well heater (platinum crucible), thermofin.At present the thermofin of thermal field great majority adopt land-fill methods to constitute, and are about to straight-cylindrical platinum crucible and are embedded in the thick and heavy corundum crucible with insulating powder (aluminum oxide or zirconium white) and form.This kind composition-formed is simple, cheap, has reached the required thermal field environment of crystal growth, and crystal can normal growth.But there are some problems in actual applications in this thermal field composition-formed: the one, when operation insulating powder pollute the raw material in the platinum crucible easily, cause clearly the material cycle short, and dress, workload is big when getting stove; The 2nd, effect of heat insulation is undesirable, and corundum crucible easily splits; The 3rd, because of insulating powder unit weight is bigger, weighing load is big, under the control diameter method of weighing unfavorable.
Summary of the invention
The utility model be for solve the defective of above-mentioned thermal field of single crystal furnace device, a kind of novel thermal field device be provided, reach avoid using insulating powder, easy to operate, heat-proof quality good, the load of weighing is little, the purpose of long service life.
Solution of the present utility model is: the thermofin of thermal field device adopts the combined type fixed sturcture, and its skin is made the straight tubular of thin-walled with the hard refractory materials, and liner with same material make suitable for reading big slightly, go to the bottom thin-walled back taper tubular slightly little.Filling high-temperature resistant thermal insulating material around between skin and liner is also made the back taper tubular that matches with liner as the shape of the platinum crucible of well heater.The thermal field device of Gou Chenging like this has easy to operate, low to the possibility of pollution of raw material, long service life, thermal field is stable, power consumption is little and lightweight characteristics, and the control diameter of weighing under helping is applicable to the growth of piezoelectricity or optical grade high-temp oxide crystal.
Description of drawings
Fig. 1 is cross-sectional view of the present utility model.
Embodiment
In conjunction with Fig. 1, the thermofin of whole thermal field device adopts the combined type fixed sturcture, and its skin 1 is with hard high alumina ceramic (AL
2O
3) make the thin-walled straight-tube shape, liner 3 then with same material make suitable for reading big slightly, go to the bottom thin-walled back taper tubular slightly little, outer 1 and liner 3 between around filling high-temperature refractory polycrystalline mullite fibre 2, its bottom is the common oxidation aluminum foam 5 of filling then.Shape as the platinum crucible 4 of well heater is also made the back taper tubular that matches with liner 3.For making the control diameter of weighing more accurate, an annular self-induction magnetic buoyancy loop expansion pipe 6 also is equipped with in the bottom between skin 1 and liner 3.7 is the cross section of inductor coil among the figure.
Claims (3)
1, a kind of crystal growth thermal field device, be to constitute by inductor block, well heater, thermofin, it is characterized in that: the thermofin of thermal field device adopts the combined type fixed sturcture, its skin (1) is made the straight tubular of thin-walled with the hard refractory materials, and liner (3) with same material make suitable for reading big slightly, go to the bottom thin-walled back taper tubular slightly little, filling high-temperature resistant thermal insulating material (2) all around between outer (1) and liner (3) is also made the back taper tubular that matches with liner (3) as the shape of the platinum crucible (4) of well heater.
2, a kind of crystal growth thermal field device according to claim 1 is characterized in that said high-temperature resistant thermal insulating material (2) is a kind of polycrystalline mullite fibre.
3, a kind of crystal growth thermal field device according to claim 1 and 2 is characterized in that a self-induction magnetic buoyancy loop expansion pipe (6) also is equipped with in the bottom of said thermofin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02260743 CN2571773Y (en) | 2002-10-14 | 2002-10-14 | Thermal field device for crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02260743 CN2571773Y (en) | 2002-10-14 | 2002-10-14 | Thermal field device for crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2571773Y true CN2571773Y (en) | 2003-09-10 |
Family
ID=33727721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02260743 Expired - Fee Related CN2571773Y (en) | 2002-10-14 | 2002-10-14 | Thermal field device for crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2571773Y (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100371506C (en) * | 2005-03-28 | 2008-02-27 | 荀建华 | heat preservation device of single crystal furnace |
| CN101701356A (en) * | 2009-11-17 | 2010-05-05 | 中山大学 | Lower weighing method used for equal-diameter growth of photoelectric crystal |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN111206282A (en) * | 2019-10-30 | 2020-05-29 | 德清晶辉光电科技股份有限公司 | Production method of 8-inch lithium niobate crystal |
| CN111575784A (en) * | 2019-08-21 | 2020-08-25 | 眉山博雅新材料有限公司 | Crystal preparation device |
| WO2021031140A1 (en) * | 2019-08-21 | 2021-02-25 | 眉山博雅新材料有限公司 | Open temperature field |
| US11155930B2 (en) | 2019-08-21 | 2021-10-26 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
-
2002
- 2002-10-14 CN CN 02260743 patent/CN2571773Y/en not_active Expired - Fee Related
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100371506C (en) * | 2005-03-28 | 2008-02-27 | 荀建华 | heat preservation device of single crystal furnace |
| CN101701356A (en) * | 2009-11-17 | 2010-05-05 | 中山大学 | Lower weighing method used for equal-diameter growth of photoelectric crystal |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN106480493B (en) * | 2015-08-27 | 2018-12-07 | 中国科学院上海硅酸盐研究所 | A kind of heating device for crystal growth |
| US11198947B2 (en) | 2019-08-21 | 2021-12-14 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11566341B2 (en) | 2019-08-21 | 2023-01-31 | Meishan Boya Advanced Materials Co., Ltd. | Open czochralski furnace for single crystal growth |
| WO2021031140A1 (en) * | 2019-08-21 | 2021-02-25 | 眉山博雅新材料有限公司 | Open temperature field |
| US10982349B2 (en) | 2019-08-21 | 2021-04-20 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
| US11155930B2 (en) | 2019-08-21 | 2021-10-26 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| CN113584572A (en) * | 2019-08-21 | 2021-11-02 | 眉山博雅新材料有限公司 | Crystal preparation device |
| US11982014B2 (en) | 2019-08-21 | 2024-05-14 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| CN113584572B (en) * | 2019-08-21 | 2022-05-10 | 眉山博雅新材料股份有限公司 | Crystal preparation device |
| US11441233B2 (en) | 2019-08-21 | 2022-09-13 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
| CN111575784A (en) * | 2019-08-21 | 2020-08-25 | 眉山博雅新材料有限公司 | Crystal preparation device |
| US11566343B2 (en) | 2019-08-21 | 2023-01-31 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11566342B2 (en) | 2019-08-21 | 2023-01-31 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11572634B2 (en) | 2019-08-21 | 2023-02-07 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11851783B2 (en) | 2019-08-21 | 2023-12-26 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11851782B2 (en) | 2019-08-21 | 2023-12-26 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| US11885037B2 (en) | 2019-08-21 | 2024-01-30 | Meishan Boya Advanced Materials Co., Ltd. | Open Czochralski furnace for single crystal growth |
| CN111206282A (en) * | 2019-10-30 | 2020-05-29 | 德清晶辉光电科技股份有限公司 | Production method of 8-inch lithium niobate crystal |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |