CN220627826U - Linear half silicon wafer transmission line - Google Patents
Linear half silicon wafer transmission line Download PDFInfo
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- CN220627826U CN220627826U CN202322148494.5U CN202322148494U CN220627826U CN 220627826 U CN220627826 U CN 220627826U CN 202322148494 U CN202322148494 U CN 202322148494U CN 220627826 U CN220627826 U CN 220627826U
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 168
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 100
- 239000010703 silicon Substances 0.000 title claims abstract description 100
- 235000012431 wafers Nutrition 0.000 claims abstract description 97
- 230000007246 mechanism Effects 0.000 claims abstract description 92
- 238000007599 discharging Methods 0.000 claims abstract description 63
- 238000012545 processing Methods 0.000 claims abstract description 57
- 238000001179 sorption measurement Methods 0.000 claims abstract description 53
- 238000012546 transfer Methods 0.000 claims abstract description 28
- 238000012937 correction Methods 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 11
- 230000006872 improvement Effects 0.000 description 9
- 230000002950 deficient Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model discloses a linear half silicon wafer transmission line, which comprises a processing transmission platform, a transfer mechanism, a feeding transmission line and a discharging transmission line which are arranged side by side, wherein the feeding transmission line and the discharging transmission line both comprise a plurality of transmission lines; the processing and conveying platform comprises an adsorption platform and a first sliding module, and the first sliding module is used for driving the adsorption platform to move; the transfer mechanism comprises a grabbing component and a second sliding module, the second sliding module is used for driving the grabbing component to move, and the grabbing component is used for transferring the silicon wafer on the feeding transmission line to the adsorption platform or transferring the silicon wafer on the adsorption platform to the discharging transmission line; the grabbing assembly comprises a plurality of vacuum chucks which are used for simultaneously sucking silicon wafers on a plurality of conveying lines. According to the utility model, through the arrangement of the feeding transmission line, the discharging transmission line and the transfer mechanism, the feeding and discharging of a plurality of half silicon wafers can be simultaneously carried out, and the production efficiency is improved.
Description
Technical Field
The utility model relates to the technical field of battery manufacturing, in particular to a linear half-piece silicon wafer transmission line.
Background
In the prior art, there is a laser grooving process in the production process of solar cells (such as Topcon cells). In this step, a laser is used to perforate or slit the surface of the silicon wafer to form a part of the thin film layer (e.g., AL 2 O 3 Layer, siNx layer) is perforated to expose the silicon substrate so that the back electric field contacts the silicon substrate through holes or grooves in the film.
Since the tact time of laser processing is slow, it is generally necessary to configure a plurality of production lines to perform a laser grooving process of a silicon wafer in order to improve productivity. However, this increases the cost of the device and increases the footprint. In order to solve the above problems, a plurality of lasers are added at the laser processing stations of a production line, so that a plurality of silicon wafers can be processed simultaneously, and the productivity can be improved, but the efficiency is lower in the prior art by adopting a transmission belt structure to transfer the silicon wafers one by one to the rotating jig table of the processing stations. And because the production line needs to carry out the simultaneous transportation of two half-piece silicon wafers according to the needs of customers, the transportation of the two half-piece silicon wafers cannot be completed by the existing production line.
Disclosure of Invention
In order to overcome the defects in the prior art, the utility model provides the linear half-piece silicon wafer transmission line, and the production efficiency is improved by conveying a plurality of half-piece silicon wafers at the same time.
The technical scheme adopted for solving the technical problems is as follows:
the linear half-piece silicon wafer transmission line comprises a feeding transmission line and a discharging transmission line which are arranged side by side, wherein the feeding transmission line and the discharging transmission line both comprise a plurality of transmission lines; further comprises:
the processing and conveying platform comprises an adsorption platform and a first sliding module, and the first sliding module is used for driving the adsorption platform to move;
the transfer mechanism comprises a grabbing component and a second sliding module, the second sliding module is used for driving the grabbing component to move, and the grabbing component is used for transferring the silicon wafer on the feeding transmission line to the adsorption platform or transferring the silicon wafer on the adsorption platform to the discharging transmission line; the grabbing assembly comprises a plurality of vacuum chucks which are used for simultaneously sucking silicon wafers on a plurality of conveying lines.
As a further improvement of the technical scheme, the feeding transmission lines and the discharging transmission lines are correspondingly provided with a plurality of groups, and the processing transmission platform and the transfer mechanism are correspondingly provided with a plurality of groups.
As a further improvement of the technical scheme, a plurality of groups of adsorption platforms on the processing and conveying platform are correspondingly arranged.
As a further improvement of the technical scheme, the grabbing component comprises a feeding grabbing component and a discharging grabbing component, the feeding grabbing component is used for transferring the silicon wafers on the feeding transmission line to the adsorption platform, and the discharging grabbing component is used for transferring the silicon wafers of the adsorption platform to the discharging transmission line.
As the further improvement of above-mentioned technical scheme, the material loading snatchs the subassembly and the unloading snatchs the subassembly structure the same, all includes a fixed bolster and installs a plurality of vacuum chuck on the fixed bolster, and a plurality of vacuum chuck is rectangular array setting, and the interval of two rows of adjacent vacuum chuck equals the interval of two rows of adjacent transfer chain.
As a further improvement of the technical scheme, the adsorption platform comprises a sliding support and a vacuum adsorption plate arranged on the sliding support, and the sliding support is connected with the first sliding module.
As a further improvement of the technical scheme, the linear half-wafer processing transmission line further comprises a butt clamp correction mechanism, wherein the butt clamp correction mechanism at least comprises two butt clamp correction mechanisms, and at least one butt clamp correction mechanism is arranged on one side of the feeding transmission line and used for correcting the position of the wafer on the feeding transmission line; and at least one butt clamp correcting mechanism is arranged on one side of the blanking transmission line and used for correcting the position of the silicon chip on the blanking transmission line.
As a further improvement of the technical scheme, the linear half-wafer processing transmission line also comprises a buffer mechanism, and the buffer mechanism at least comprises two buffer mechanisms; at least one buffer mechanism is arranged on one side of the feeding transmission line to buffer the silicon wafers to be transferred from the feeding transmission line to the laser processing station; and at least one buffer mechanism is arranged on one side of the blanking transmission line to buffer the silicon wafers to be transferred from the blanking transmission line to the subsequent stations.
As a further improvement of the technical scheme, the linear half-wafer silicon wafer processing transmission line further comprises a hidden crack detection mechanism and an AOI detection mechanism, wherein the hidden crack detection mechanism is arranged on one side of the feeding transmission line and is used for detecting the silicon wafer; the AOI detection mechanism is arranged on one side of the blanking transmission line and is used for detecting the surface of the silicon wafer.
As a further improvement of the technical scheme, the linear half silicon wafer processing transmission line further comprises an NG discharging mechanism, wherein the NG discharging mechanism is arranged on one side of the blanking transmission line and used for taking off the unqualified silicon wafers detected by the AOI detection mechanism from the blanking transmission line.
The beneficial effects of the utility model are as follows: the transfer mechanism and the processing and conveying platform are used for carrying the half silicon wafers in a straight line manner, and carrying of a plurality of half silicon wafers can be carried out simultaneously, so that the production efficiency is improved.
Drawings
The utility model will be further described with reference to the drawings and examples.
FIG. 1 is a top view of a linear half-wafer processing transmission line of the present utility model;
FIG. 2 is a layout of a linear half-wafer processing transmission line of the present utility model;
FIG. 3 is a schematic perspective view of a processing and conveying platform of the linear half-wafer processing and conveying line;
FIG. 4 is a top view of a transfer mechanism of the linear half-wafer processing and transporting line of the present utility model;
FIG. 5 is a schematic perspective view of a transfer mechanism of the linear half silicon wafer processing transmission line of the utility model;
FIG. 6 is an enlarged view of a portion of FIG. 5 at A;
FIG. 7 is a schematic structural view of a butt-clamp correction mechanism of the linear half silicon wafer processing transmission line of the utility model;
FIG. 8 is a schematic diagram of a buffer mechanism of a linear half-wafer processing transmission line according to the present utility model;
fig. 9 is a schematic structural diagram of an NG discharge mechanism of the linear half silicon wafer processing transmission line of the present utility model.
Reference numerals: 1. a blanking transmission line; 2. a feeding transmission line; 3. processing a transmission platform; 4. a transfer mechanism; 5. a butt clamp correcting mechanism; 6. a buffer mechanism; 7. NG a discharging mechanism; 8. an AOI detection mechanism; 9. a hidden crack detection mechanism;
1a, a first blanking transmission line; 1b, a second blanking transmission line; 2a, a first feeding transmission line; 2b, a second feeding transmission line; 3a, a first processing and conveying platform; 3b, a second processing and conveying platform; 32a, a first adsorption platform; 32b, a second adsorption platform; 32c, a third adsorption platform; 32d, a fourth adsorption platform; 4a, a first transfer mechanism; 4b, a second transfer mechanism; 42a, a first feeding grabbing component; 42b, a second feeding grabbing component; 43a, a first blanking grabbing component; 43b, a second blanking grabbing component;
31. a first sliding module; 32. an adsorption platform; 321. a sliding support; 322. a vacuum adsorption plate;
41. a gantry bracket; 42. a feeding grabbing component; 421. a fixed bracket; 422. a mounting plate; 423. a first vacuum chuck; 43. a blanking grabbing component; 44. a second sliding module;
51. a bottom plate; 52. a guide rail slide block assembly; 53. a first U-shaped bracket; 54. a second U-shaped bracket; 55. a first restriction assembly; 56. a second restriction assembly; 57. a third limiting assembly; 58. a fourth limiting assembly; 59. a correction drive assembly;
61. a lifting driving assembly; 62. a connecting frame; 63. a connecting plate; 64. a ceramic rod;
71. a support frame; 72. a cross beam; 73. a sliding assembly; 74. a lifting assembly; 75. a support plate; 76. a second vacuum chuck; 77. and a material box.
Detailed Description
The conception, specific structure, and technical effects produced by the present utility model will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, features, and effects of the present utility model. It is apparent that the described embodiments are only some embodiments of the present utility model, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present utility model based on the embodiments of the present utility model. In addition, all the coupling/connection relationships referred to in the patent are not direct connection of the single-finger members, but rather, it means that a better coupling structure can be formed by adding or subtracting coupling aids depending on the specific implementation. The technical features in the utility model can be interactively combined on the premise of no contradiction and conflict.
Referring to fig. 1, the layout is performed again on a silicon wafer processing transmission line in this embodiment, and the silicon wafer processing transmission line includes a loading transmission line 2, a discharging transmission line 1, a processing transmission platform 3, a transfer mechanism 4, a butt clamp correction mechanism 5, a buffer mechanism 6, a hidden crack detection mechanism 9, an AOI detection mechanism 8, and an NG discharge mechanism 7. The feeding transmission line 2 is sequentially provided with a pair of clamp correction mechanisms 5, a buffer mechanism 6 and a hidden crack detection mechanism 9 along the transmission direction; the blanking transmission line 1 is sequentially provided with an AOI detection mechanism 8, an NG discharging mechanism 7, a buffer mechanism 6 and a pair of clamp correction mechanisms 5 along the transmission direction; the transfer mechanism 4 is arranged among the feeding transmission line 2, the discharging transmission line 1 and the processing transmission platform 3.
The transmission process of the silicon wafer processing is as follows: firstly, the silicon wafer is fed from the feeding end of the feeding transmission line 2 and then is conveyed to the discharging end of the feeding transmission line 2, wherein the butt clamp correcting mechanism 5 corrects the position of the silicon wafer on the feeding transmission line 2, then the hidden crack detecting mechanism 9 detects the silicon wafer to avoid laser processing of the silicon wafer with cracks, when the silicon wafer is conveyed to the discharging end, the transferring mechanism 4 transfers the good silicon wafer to the adsorption platform 32 of the processing transmission platform 3, the processing transmission platform 3 translates the silicon wafer to the processing station (below the laser) to perform laser processing, and in addition, the transferring mechanism 4 directly transfers the defective silicon wafer to the feeding end of the discharging transmission line 1 and then conveys the defective silicon wafer to the discharging end of the discharging transmission line 1. The silicon wafer after laser processing is moved away from the lower part of the laser by the processing and conveying platform 3, and is transferred to the feeding end of the blanking conveying line 1 by the transfer mechanism 4. And finally, conveying the silicon wafer from the feeding end to the discharging end of the blanking transmission line 1, wherein the AOI detection mechanism 8 detects the silicon wafer, if the silicon wafer is defective, the silicon wafer is moved out of the blanking transmission line 1 through the NG discharging mechanism 7, and if the silicon wafer is defective, the silicon wafer is continuously conveyed to the discharging end of the blanking transmission line 1 and is subjected to position correction through the butt clamp correction mechanism 5.
In this embodiment, the feeding transmission line 2 and the discharging transmission line 1 each include a plurality of transmission lines, preferably two, so that two half silicon wafers can be conveniently and simultaneously transported.
The feeding transmission lines 2 and the discharging transmission lines 1 are correspondingly provided with a plurality of groups (i.e. the number of the feeding transmission lines 2 is the same as that of the discharging transmission lines 1), referring to fig. 2, two groups are preferred in this embodiment, namely, two feeding transmission lines 2 (marked as a first feeding transmission line 2a and a second feeding transmission line 2 b) and two discharging transmission lines 1 (marked as a first discharging transmission line 1a and a second discharging transmission line 1 b), the two feeding transmission lines 2 are arranged side by side, and the two discharging transmission lines 1 are located outside the two feeding transmission lines 2 (i.e. arranged in sequence according to the first discharging transmission line 1a, the first feeding transmission line 2a, the second feeding transmission line 2b and the second discharging transmission line 1 b). In addition, the number of the processing and transporting platforms 3 and the transporting mechanism 4 corresponding to the feeding and discharging transmission lines 2 and 1 is two (respectively labeled as a first processing and light transmission platform, a second processing and transporting platform 3b, a first transporting mechanism 4a and a second transporting mechanism 4 b), and the number of the adsorbing platforms 32 on each processing and transporting platform 3 corresponding to the feeding and discharging transmission lines 2 and 1 is also two (the adsorbing platforms 32 on the first processing and transporting platform 3a are labeled as a first adsorbing platform 32a and a second adsorbing platform 32b, the adsorbing platforms 32 on the second processing and transporting platform 3b are labeled as a third adsorbing platform 32c and a fourth adsorbing platform 32 d), and the two adsorbing platforms 32 on each processing and transporting platform 3 can be alternately moved to the lower part of the laser. The grabbing components in the transferring mechanism 4 comprise a feeding grabbing component 42 and a discharging grabbing component 43 (the grabbing components in the first transferring mechanism 4a are marked as a first feeding grabbing component 42a and a first discharging grabbing component 43a, the grabbing components in the second transferring mechanism 4b are marked as a third feeding grabbing component 42 and a fourth discharging grabbing component 43), the two transferring mechanisms 4 can transfer the silicon wafers on the two feeding transmission lines 2 to the four adsorption platforms 32 on the two processing transmission platforms 3, and the two transferring mechanisms 4 can also transfer the silicon wafers of the adsorption platforms 32 to the two discharging transmission lines 1.
The specific transportation working process is as follows: the first feeding grabbing component 42a transfers the silicon wafer on the first feeding transmission line 2a to the first adsorption platform 32a, meanwhile, the second feeding grabbing component 42b transfers the silicon wafer on the second feeding transmission line 2b to the fourth adsorption platform 32d, and the first adsorption platform 32a and the fourth adsorption platform 32d move to the lower part of the laser to perform laser processing on the silicon wafer; at this time, the first material loading grabbing component 42a transfers the silicon wafer on the first material loading transmission line 2a to the third adsorption platform 32c, and the second material loading grabbing component 42b transfers the silicon wafer on the second material loading transmission line 2b to the second adsorption platform 32 b; after the processing of the previous group of silicon wafers is completed, the first adsorption platform 32a and the fourth adsorption platform 32d move to a blanking station (the position on the first sliding module 31 and the blanking transmission line 1 are positioned on the same straight line), the silicon wafers are respectively transferred to the first blanking transmission line 1a and the second blanking transmission line 1b by the first blanking grabbing component 43a and the second blanking grabbing component 43b, then the first adsorption platform 32a and the fourth adsorption platform 32d move to a feeding station (the position on the first sliding module 31 and the feeding transmission line 2 are positioned on the same straight line), the silicon wafers on the first feeding transmission line 2a are transferred to the first adsorption platform 32a by the first feeding grabbing component 42a, and the silicon wafers on the second feeding transmission line 2b are transferred to the fourth adsorption platform 32d by the second feeding grabbing component 42 b; at the same time, the second adsorption stage 32b and the third adsorption stage 32c move to below the laser for processing; the two groups of silicon wafers can be sequentially processed by repeating the operation, so that the processing efficiency is improved.
In this embodiment, referring to fig. 3, the processing and conveying platform 3 includes an adsorption platform 32 and a first sliding module 31, the first sliding module 31 is configured to drive the adsorption platform 32 to move, the first sliding module 31 may adopt a linear movement module such as a linear motor, a ball screw, an air cylinder, a motor sliding table, etc., the adsorption platform 32 includes a sliding bracket 321 and a vacuum adsorption plate 322 mounted on the sliding bracket 321, the sliding bracket 321 is fixedly connected with a movable portion of the first sliding module 31, and the first sliding module 31 may drive the sliding bracket 321 and the vacuum adsorption plate 322 to move to a feeding station, a discharging station and a processing station.
In this embodiment, referring to fig. 4 to fig. 6, the transferring mechanism 4 includes a gantry 41, a grabbing component and a second sliding module 44, where the second sliding module 44 is used to drive the grabbing component to move, and the grabbing component is used to transfer the silicon wafer on the feeding transmission line 2 to the adsorption platform 32 or transfer the silicon wafer on the adsorption platform 32 to the discharging transmission line 1. Specifically, the grabbing component includes a feeding grabbing component 42 and a discharging grabbing component 43, the feeding grabbing component 42 and the discharging grabbing component 43 are respectively connected to two sides of the gantry 41 in a sliding manner through a second sliding module 44, and the second sliding module 44 can also adopt linear moving modules such as a linear motor, a ball screw, an air cylinder, a motor sliding table and the like. More specifically, the feeding grabbing component 42 and the discharging grabbing component 43 have the same structure and comprise a fixed support 421, two horizontally placed mounting plates 422 are arranged side by side at the bottom of the fixed support 421, two first vacuum chucks 423 (the first vacuum chucks 423 are connected with external vacuum equipment to realize vacuum negative pressure adsorption or positive pressure vacuum breaking desorption), and four first vacuum chucks 423 are arranged in a rectangular array, and the distance between two adjacent rows of first vacuum chucks 423 is equal to the distance between two adjacent rows of conveying lines, so that silicon wafers with the feeding conveying lines 2 of the two conveying lines can be simultaneously grabbed, and four half silicon wafers can be grabbed at one time, thereby improving efficiency.
In this embodiment, referring to fig. 7, the butt clamp correction mechanism 5 includes a base plate 51, a guide rail slider assembly 52, a first U-shaped bracket 53, a second U-shaped bracket 54, and a correction driving assembly 59, where the first U-shaped bracket and the second U-shaped bracket 54 are slidably connected with the base plate 51 through the guide rail slider assembly 52, the correction driving assembly 59 is used to drive the first U-shaped bracket and the second U-shaped bracket 54 to move in opposite directions or move in opposite directions, two ends of the first U-shaped bracket 53 are respectively provided with a first limiting assembly 55 and a second limiting assembly 56, and two ends of the second U-shaped bracket 54 are respectively provided with a third limiting assembly 57 and a fourth limiting assembly 58.
When the first U-shaped bracket moves in opposite directions with the second U-shaped bracket 54, the first limiting assembly 55 and the third limiting assembly 57 move in opposite directions to correct the position of one half silicon wafer, and the second limiting assembly 56 and the fourth limiting assembly 58 move in opposite directions to correct the position of the other half silicon wafer.
In addition, in this embodiment, only one correction driving assembly 59 is needed to drive the first U-shaped bracket and the second U-shaped bracket 54 to move in opposite directions, so that the cost is saved, the correction driving assembly 59 can adopt a motor combined with a belt transmission mode, and the upper and lower sides of the belt are respectively connected with the first U-shaped bracket and the second U-shaped bracket 54, so that the first U-shaped bracket and the second U-shaped bracket 54 are driven to move in opposite directions or move in opposite directions when the motor drives the belt.
In this embodiment, referring to fig. 8, the buffer mechanism 6 includes a buffer frame and a lifting driving assembly 61 for driving the buffer frame to lift, the buffer frame includes a connection frame 62 and three parallel connection plates 63 disposed at the bottom of the connection frame 62, the connection lines of the three connection plates 63 are parallel to the width direction of the feeding transmission line 2 or the discharging transmission line 1, two opposite sides of two adjacent connection plates 63 in the three connection plates 63 are respectively provided with a plurality of ceramic rods 64, i.e. two sides of the connection plate 63 located in the middle are respectively provided with a ceramic rod 64, the inner sides of two connection plates 63 located at the outer sides are respectively provided with a ceramic rod 64, a plurality of ceramic rods 64 are arranged in a rectangular array (two rows of N columns, N is a natural number greater than 2), two adjacent rows of ceramic rods 64 located at the same horizontal plane on adjacent connection plates 63 form a buffer tank (the buffer frame has 2 x (N-1) in total), two half silicon wafers on two transmission lines in the feeding transmission line 2 or the discharging transmission line 1 can enter into the buffer tank of the same height at the same time, the buffer tank is controlled to rise, and the silicon wafers enter the buffer tank from the feeding transmission line 1 or the discharging transmission line 1 in turn, and the silicon wafers enter the buffer tank from the feeding transmission line 1 or the buffer tank 2. The buffer mechanism 6 can prevent the silicon wafer from being bumped when the silicon wafer feeding speed is higher than the processing speed.
In this embodiment, referring to fig. 9, the NG discharging mechanism 7 includes a supporting frame 71, a sliding component 73, a material taking component and a material box 77, where the supporting frame 71 has a cross beam 72 located above the discharging transmission line 1, the sliding component 73 is disposed on the cross beam 72, the sliding component 73 may use a guide rail sliding block structure in combination with a cylinder, a linear motor and other power sources to drive the material taking component to move in the width direction of the discharging transmission line 1, the material taking component includes a lifting component 74, a supporting board 75 and a second vacuum chuck 76 connected to the bottom of the supporting board 75, the lifting component 74 may use a cylinder, a fixed end of the cylinder is fixedly connected with a sliding block in the sliding component 73, the supporting board 75 is fixed on a telescopic end of the cylinder, when a defective product is detected, the sliding component 73 drives the second vacuum chuck 76 to move directly above the transmission line, the cylinder drives the second vacuum chuck 76 to move downward, the second vacuum chuck 76 generates negative pressure to suck the defective silicon wafer, and then moves upward, the sliding component 73 drives the second vacuum chuck 76 to move to the second vacuum chuck 76 located above the material box 77 on one side of the discharging transmission line 1, and the defective product is removed from the silicon wafer.
Further, the number of the second vacuum chucks 76 is two, and the two second vacuum chucks 76 can simultaneously suck silicon wafers on two conveying lines in the blanking conveying line 1.
In addition, the hidden crack detection mechanism 9 and the AOI detection mechanism 8 in this embodiment are conventional apparatuses existing in the art, and therefore, a detailed description is omitted in this embodiment.
While the preferred embodiment of the present utility model has been described in detail, the present utility model is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present utility model, and these equivalent modifications or substitutions are included in the scope of the present utility model as defined in the appended claims.
Claims (10)
1. The linear half-piece silicon wafer transmission line comprises a feeding transmission line and a discharging transmission line which are arranged side by side, wherein the feeding transmission line and the discharging transmission line both comprise a plurality of transmission lines; characterized by further comprising:
the processing and conveying platform comprises an adsorption platform and a first sliding module, and the first sliding module is used for driving the adsorption platform to move;
the transfer mechanism comprises a grabbing component and a second sliding module, the second sliding module is used for driving the grabbing component to move, and the grabbing component is used for transferring the silicon wafer on the feeding transmission line to the adsorption platform or transferring the silicon wafer on the adsorption platform to the discharging transmission line; the grabbing assembly comprises a plurality of vacuum chucks which are used for simultaneously sucking silicon wafers on a plurality of conveying lines.
2. The linear half-wafer transmission line according to claim 1, wherein a plurality of groups of the feeding transmission lines and the discharging transmission lines are arranged correspondingly, and a plurality of groups of the processing transmission platforms and the transfer mechanisms are arranged correspondingly.
3. The linear half-wafer transmission line according to claim 2, wherein a plurality of groups of adsorption platforms are correspondingly arranged on the processing and transmission platform.
4. A linear half silicon wafer transmission line according to claim 3, wherein the grabbing component comprises a feeding grabbing component and a discharging grabbing component, the feeding grabbing component is used for transferring the silicon wafer on the feeding transmission line to the adsorption platform, and the discharging grabbing component is used for transferring the silicon wafer on the adsorption platform to the discharging transmission line.
5. The linear half silicon wafer transmission line according to claim 4, wherein the feeding grabbing component and the discharging grabbing component each comprise a fixing support and a plurality of vacuum chucks arranged on the fixing support, the vacuum chucks are arranged in a rectangular array, and the distance between two adjacent rows of vacuum chucks is equal to the distance between two adjacent rows of transmission lines.
6. The linear half silicon wafer transmission line according to claim 5, wherein the adsorption platform comprises a sliding bracket and a vacuum adsorption plate mounted on the sliding bracket, and the sliding bracket is connected with the first sliding module.
7. The linear half-wafer transmission line according to claim 1, further comprising a butt-clamp correction mechanism, wherein the butt-clamp correction mechanism at least comprises two butt-clamp correction mechanisms, and at least one butt-clamp correction mechanism is arranged on one side of the feeding transmission line and used for correcting the position of the wafer on the feeding transmission line; and at least one butt clamp correcting mechanism is arranged on one side of the blanking transmission line and used for correcting the position of the silicon chip on the blanking transmission line.
8. The linear half-wafer transmission line according to claim 1, further comprising a buffer mechanism, wherein the buffer mechanism comprises at least two buffer mechanisms; at least one buffer mechanism is arranged on one side of the feeding transmission line to buffer the silicon wafers to be transferred from the feeding transmission line to the laser processing station; and at least one buffer mechanism is arranged on one side of the blanking transmission line to buffer the silicon wafers to be transferred from the blanking transmission line to the subsequent stations.
9. The linear half-wafer silicon wafer transmission line according to claim 1, further comprising a hidden crack detection mechanism and an AOI detection mechanism, wherein the hidden crack detection mechanism is arranged on one side of the feeding transmission line and is used for detecting a silicon wafer; the AOI detection mechanism is arranged on one side of the blanking transmission line and is used for detecting the surface of the silicon wafer.
10. The linear half silicon wafer transmission line according to claim 9, further comprising an NG discharging mechanism, wherein the NG discharging mechanism is disposed on one side of the blanking transmission line, and is configured to remove the unqualified silicon wafer detected by the AOI detecting mechanism from the blanking transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322148494.5U CN220627826U (en) | 2023-08-10 | 2023-08-10 | Linear half silicon wafer transmission line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322148494.5U CN220627826U (en) | 2023-08-10 | 2023-08-10 | Linear half silicon wafer transmission line |
Publications (1)
| Publication Number | Publication Date |
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| CN220627826U true CN220627826U (en) | 2024-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322148494.5U Active CN220627826U (en) | 2023-08-10 | 2023-08-10 | Linear half silicon wafer transmission line |
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|---|---|
| CN (1) | CN220627826U (en) |
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2023
- 2023-08-10 CN CN202322148494.5U patent/CN220627826U/en active Active
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