CN220627824U - Half silicon chip processing transmission line - Google Patents
Half silicon chip processing transmission line Download PDFInfo
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- CN220627824U CN220627824U CN202322148474.8U CN202322148474U CN220627824U CN 220627824 U CN220627824 U CN 220627824U CN 202322148474 U CN202322148474 U CN 202322148474U CN 220627824 U CN220627824 U CN 220627824U
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 118
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000012545 processing Methods 0.000 title claims abstract description 62
- 230000007246 mechanism Effects 0.000 claims abstract description 84
- 235000012431 wafers Nutrition 0.000 claims abstract description 69
- 238000007599 discharging Methods 0.000 claims abstract description 38
- 238000012937 correction Methods 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000006872 improvement Effects 0.000 description 9
- 230000002950 deficient Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a half silicon wafer processing transmission line which comprises a feeding transmission line, a discharging transmission line, a laser processing rotary platform and a transfer mechanism which are arranged side by side, wherein the feeding transmission line and the discharging transmission line comprise a plurality of conveying lines, the transfer mechanism comprises a vacuum chuck, a bracket and a rotary driving assembly, the rotary driving assembly is used for driving the bracket to rotate, two mounting plates are arranged on the bracket, when one mounting plate is positioned at a station to be processed of the laser processing rotary platform, the other mounting plate is positioned right above a discharge end of the feeding transmission line or a feed end of the discharging transmission line, a plurality of vacuum chucks are fixedly arranged at the bottom of each mounting plate, the vacuum chucks are arranged in a rectangular array, and two adjacent rows of vacuum chucks are positioned right above discharge ends of two adjacent rows of conveying lines. According to the utility model, through the arrangement of the feeding transmission line, the discharging transmission line and the transfer mechanism, the feeding and discharging of a plurality of half silicon wafers can be simultaneously carried out, and the production efficiency is improved.
Description
Technical Field
The utility model relates to the technical field of battery manufacturing, in particular to a half silicon wafer processing transmission line.
Background
In the prior art, there is a laser grooving process in the production process of solar cells (such as Topcon cells). In this step, a laser is used to perforate or slit the surface of the silicon wafer to form a part of the thin film layer (e.g., AL 2 O 3 Layer, siNx layer) is perforated to expose the silicon substrate so that the back electric field contacts the silicon substrate through holes or grooves in the film.
Since the tact time of laser processing is slow, it is generally necessary to configure a plurality of production lines to perform a laser grooving process of a silicon wafer in order to improve productivity. However, this increases the cost of the device and increases the footprint. In order to solve the above problems, a plurality of lasers are added at the laser processing stations of a production line, so that a plurality of silicon wafers can be processed simultaneously, and the productivity can be improved, but the efficiency is lower in the prior art by adopting a transmission belt structure to transfer the silicon wafers one by one to the rotating jig table of the processing stations. And because the production line needs to carry out the simultaneous transportation of two half-piece silicon wafers according to the needs of customers, the transportation of the two half-piece silicon wafers cannot be completed by the existing production line.
Disclosure of Invention
In order to overcome the defects in the prior art, the utility model provides a half silicon wafer processing transmission line, which improves the production efficiency by conveying a plurality of half silicon wafers at the same time.
The technical scheme adopted for solving the technical problems is as follows:
the utility model provides a half silicon chip processing transmission line, includes material loading transmission line, unloading transmission line, laser processing rotary platform and the transport mechanism that set up side by side, material loading transmission line, unloading transmission line all include many transfer lines, transport mechanism includes vacuum chuck, support and rotary drive subassembly, rotary drive subassembly is used for driving the support and rotates, be provided with two mounting panels on the support, when one of them mounting panel is located the waiting processing station of laser processing rotary platform, another mounting panel is located the discharge end of material loading transmission line or the feed end of unloading transmission line directly over, every the equal fixed mounting of bottom of mounting panel has a plurality of vacuum chuck, and a plurality of vacuum chuck are rectangular array setting, and adjacent two rows of vacuum chuck are located the discharge end of two rows of adjacent transfer lines directly over.
As a further improvement of the technical scheme, the support comprises a support plate and two support arms extending from the support plate, wherein the included angle of the two support arms is 90 degrees, and the two mounting plates are respectively fixed at the tail ends of the two support arms.
As a further improvement of the technical scheme, the rotary driving assembly comprises a control box and a rotary servo motor arranged in the control box, the supporting plate is rotatably connected to the top of the control box, and a main shaft of the rotary servo motor is connected with the supporting plate through a coupler.
As a further improvement of the technical scheme, the half silicon wafer processing transmission line further comprises a butt clamp correction mechanism, wherein the butt clamp correction mechanism at least comprises two butt clamp correction mechanisms, and at least one butt clamp correction mechanism is arranged on one side of the feeding transmission line and used for correcting the position of the silicon wafer on the feeding transmission line; and at least one butt clamp correcting mechanism is arranged on one side of the blanking transmission line and used for correcting the position of the silicon chip on the blanking transmission line.
As a further improvement of the technical scheme, the butt clamp correcting mechanism comprises a bottom plate, a plurality of limiting pieces which are connected to the bottom plate in a sliding manner and a rotary driving assembly which drives the limiting pieces to be close to or far away from each other, and the silicon wafers on a plurality of conveying lines of the feeding conveying line or the discharging conveying line are subjected to position correction when the limiting pieces are close to each other.
As a further improvement of the technical scheme, the half silicon wafer processing transmission line also comprises a buffer mechanism, wherein the buffer mechanism at least comprises two buffer mechanisms; at least one buffer mechanism is arranged on one side of the feeding transmission line to buffer the silicon wafers to be transferred from the feeding transmission line to the laser processing station; and at least one buffer mechanism is arranged on one side of the blanking transmission line to buffer the silicon wafers to be transferred from the blanking transmission line to the subsequent stations.
As a further improvement of the technical scheme, the buffer mechanism comprises a buffer frame and a lifting driving assembly for driving the buffer frame to lift, the buffer frame comprises a plurality of parallel connection plates, a plurality of ceramic rods are arranged on one sides of two adjacent connection plates facing each other, two ceramic rods located on the same horizontal line form a bearing part, when the buffer frame ascends, a silicon wafer enters the bearing part from a feeding transmission line or a discharging transmission line, and when the buffer frame descends, the silicon wafer enters the feeding transmission line or the discharging transmission line from the bearing part.
As a further improvement of the technical scheme, the half silicon wafer processing transmission line further comprises a hidden crack detection mechanism, and the hidden crack detection mechanism is arranged on one side of the feeding transmission line and used for detecting the silicon wafer.
As a further improvement of the technical scheme, the half silicon wafer processing transmission line further comprises an AOI detection mechanism, wherein the AOI detection mechanism is arranged on one side of the blanking transmission line and used for detecting the surface of the silicon wafer.
As a further improvement of the technical scheme, the half silicon wafer processing transmission line further comprises an NG discharging mechanism, wherein the NG discharging mechanism is arranged on one side of the blanking transmission line and used for taking off the unqualified silicon wafers detected by the AOI detection mechanism from the blanking transmission line.
The beneficial effects of the utility model are as follows: through the setting of material loading transmission line, unloading transmission line and transport mechanism, can carry out the last unloading of half piece silicon chip of many simultaneously, improved production efficiency.
Drawings
The utility model will be further described with reference to the drawings and examples.
FIG. 1 is an assembly drawing of a whole wafer processing transmission line of the present utility model;
FIG. 2 is a top view of a whole wafer processing transmission line according to the present utility model;
FIG. 3 is a schematic view of the transfer mechanism of the present utility model;
FIG. 4 is a top view of the transfer mechanism of the present utility model;
FIG. 5 is a schematic view of a butt clamp correction mechanism according to the present utility model;
FIG. 6 is a schematic diagram of a buffer mechanism according to the present utility model;
fig. 7 is a schematic structural diagram of an NG discharge mechanism in the present utility model.
Reference numerals: 1. a feeding transmission line; 2. a blanking transmission line; 3. a laser processing rotary platform; 4. a transfer mechanism; 5. a butt clamp correcting mechanism; 6. a buffer mechanism; 7. a hidden crack detection mechanism; 8. an AOI detection mechanism; 9. NG a discharging mechanism;
41. a control box; 42. rotating the servo motor; 43. a bracket; 44. a first mounting plate; 45. a first vacuum chuck; 46. a second mounting plate; 47. a second vacuum chuck;
51. a bottom plate; 52. a guide rail slide block assembly; 53. a first U-shaped bracket; 54. a second U-shaped bracket; 55. a first restriction assembly; 56. a second restriction assembly; 57. a third limiting assembly; 58. a fourth limiting assembly; 59. a correction drive assembly;
61. a lifting driving assembly; 62. a connecting frame; 63. a connecting plate; 64. a ceramic rod;
91. a support frame; 92. a cross beam; 93. a sliding assembly; 94. a lifting assembly; 95. a support plate; 96. a third vacuum chuck; 97. and a material box.
Detailed Description
The conception, specific structure, and technical effects produced by the present utility model will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, features, and effects of the present utility model. It is apparent that the described embodiments are only some embodiments of the present utility model, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present utility model based on the embodiments of the present utility model. In addition, all the coupling/connection relationships referred to in the patent are not direct connection of the single-finger members, but rather, it means that a better coupling structure can be formed by adding or subtracting coupling aids depending on the specific implementation. The technical features in the utility model can be interactively combined on the premise of no contradiction and conflict.
Referring to fig. 1 and 2, the layout of the silicon wafer processing transmission line is rearranged in this embodiment, and the silicon wafer processing transmission line includes a feeding transmission line 1, a discharging transmission line 2, a laser processing rotating platform 3, a transfer mechanism 4, a butt clamp correcting mechanism 5, a buffer mechanism 6, a hidden crack detecting mechanism 7, an AOI detecting mechanism 8 and an NG discharging mechanism 9. The feeding transmission line 1 is sequentially provided with a pair of clamp correction mechanisms 5, a buffer mechanism 6 and a hidden crack detection mechanism 7 along the transmission direction; the blanking transmission line 2 is sequentially provided with an AOI detection mechanism 8, an NG discharging mechanism 9, a buffer mechanism 6 and a pair of clamp correction mechanisms 5 along the transmission direction; the transfer mechanism 4 is arranged among the feeding transmission line 1, the discharging transmission line 2 and the laser processing rotary platform 3.
The transmission process of the silicon wafer processing is as follows: firstly, the silicon chip is fed from the feeding end of the feeding transmission line 1 and then is conveyed to the discharging end of the feeding transmission line 1, wherein the butt clamp correcting mechanism 5 corrects the position of the silicon chip on the feeding transmission line 1, then the hidden crack detecting mechanism 7 detects the silicon chip to avoid laser processing of the silicon chip with cracks, when the silicon chip is conveyed to the discharging end, the transferring mechanism 4 transfers good silicon chips to a station to be processed of the laser processing rotating platform 3, the laser processing rotating platform 3 rotates the silicon chips to the lower side of the laser for laser processing, and in addition, the transferring mechanism 4 directly transfers defective silicon chips to the feeding end of the discharging transmission line 2. Then, the silicon wafer after laser processing is rotated to a station to be processed along with the laser processing rotating platform 3, and the silicon wafer is transferred to the feeding end of the blanking transmission line 2 by the transfer mechanism 4. And finally, conveying the silicon wafer from the feeding end to the discharging end of the blanking transmission line 2, wherein the AOI detection mechanism 8 detects the silicon wafer, if defective products are removed from the blanking transmission line 2 through the NG discharging mechanism 9, the defective products are continuously conveyed to the discharging end of the blanking transmission line 2 and are subjected to position correction through the butt clamp correction mechanism 5.
In this embodiment, the feeding transmission line 1 and the discharging transmission line 2 each include a plurality of conveying lines, preferably two conveying lines, so that two half silicon wafers can be conveyed at the same time.
In this embodiment, referring to fig. 3 and 4, the transfer mechanism 4 includes a vacuum chuck, a support 43, and a rotation driving assembly, where the rotation driving assembly is used to drive the support 43 to rotate, the support 43 includes two support arms, an included angle of the two support arms is 90 °, end portions of the two support arms are respectively provided with a first mounting plate 44 and a second mounting plate 46, four first vacuum chucks 45 are fixedly installed at the bottom of the first mounting plate 44, the four first vacuum chucks 45 are arranged in a rectangular array, and the four first vacuum chucks 45 are located right above discharge ends of the two conveyor lines, that is, a distance between two rows of first vacuum chucks 45 is the same as a distance between two conveyor lines of the feeding conveyor line 1, and a distance between two rows of first vacuum chucks 45 is the same as a feeding distance between two silicon wafers on the upper half of the feeding conveyor line 1, so that the transfer mechanism 4 can simultaneously grasp four silicon wafers on the discharge end of the feeding conveyor line 1 and then transfer the silicon wafers to the laser processing rotary platform 3 for feeding; similarly, the bottom of the second mounting plate 46 is fixedly provided with four second vacuum chucks 47 with rectangular arrays, and the transfer mechanism 4 can simultaneously grasp four silicon wafers on the laser processing rotary platform 3 and transfer the silicon wafers to four receiving positions at the feeding end of the blanking transmission line 2 for blanking; the first vacuum chuck 45 and the second vacuum chuck 47 are connected with external vacuum equipment to realize vacuum negative pressure adsorption or positive pressure vacuum breaking desorption.
In the embodiment, four first vacuum chucks 45 and four second vacuum chucks 47 are adopted to simultaneously process four half silicon wafers, and compared with a belt conveying mode, the silicon wafers are conveyed to the laser processing rotary platform 3 one by one, so that the production efficiency of laser processing of the silicon wafers is improved.
As shown in fig. 3 and 4, initially, the first vacuum chuck 45 is located above the station to be processed of the laser processing rotary platform 3, the second vacuum chuck 47 is located above the feeding end of the feeding transmission line 1, the second vacuum chuck 47 generates negative pressure to suck the silicon wafer on the feeding transmission line 1, the rotary driving assembly drives the bracket 43 to rotate 90 ° clockwise, the second vacuum chuck 47 rotates above the laser processing rotary platform 3, and the vacuum is broken to place the silicon wafer on the station to be processed. Then, the rotary driving assembly drives the bracket 43 to reversely rotate 90 degrees to return to the original position, at the same time, the laser processing rotary platform 3 rotates 180 degrees, the station to be processed rotates to the position of the processing station, the laser processing of the silicon wafer is carried out, the laser processing rotary platform 3 rotates 180 degrees again to return to the original position after the silicon wafer is processed, at the moment, the second vacuum sucking disc 47 generates negative pressure to suck the silicon wafer on the feeding transmission line 1, and the first vacuum sucking disc 45 generates negative pressure to suck the silicon wafer on the laser processing rotary platform 3. Then the bracket 43 rotates 90 degrees clockwise, the second vacuum chuck 47 rotates to the upper side of the laser processing rotary platform 3, the silicon wafer is placed on the station to be processed of the laser processing rotary platform 3, meanwhile, the first vacuum chuck 45 rotates to the upper side of the blanking transmission line 2, the silicon wafer is placed on the blanking transmission line 2, and the above actions are repeated, so that the loading and unloading work of the half silicon wafer during the laser processing is completed.
In the above embodiment, the rotary driving assembly includes a control box 41 and a rotary servo motor 42 installed in the control box 41, the bracket 43 is rotatably connected to the top of the control box 41, specifically may be provided with a mounting hole on the bracket 43, a rotating shaft is fixed in the mounting hole, the rotating shaft penetrates through a top plate of the control box 41 and extends to the inside of the control box 41, a bearing may be disposed between the rotating shaft and the control box 41 to increase the stability of rotation, and a spindle of the rotary servo motor 42 is connected with the rotating shaft through a coupling. In this way, the bracket 43 is driven to rotate clockwise or anticlockwise by the forward and reverse rotation of the rotary servo motor 42, and the rotary servo motor 42 adopts a stepping motor to ensure that the angle of the clockwise or anticlockwise rotation of the bracket 43 is 90 degrees.
In this embodiment, referring to fig. 5, the butt clamp correction mechanism 5 includes a base plate 51, a guide rail slider assembly 52, a first U-shaped bracket 53, a second U-shaped bracket 54, and a correction driving assembly 59, where the first U-shaped bracket 43 and the second U-shaped bracket 54 are slidably connected with the base plate 51 through the guide rail slider assembly 52, the correction driving assembly 59 is used to drive the first U-shaped bracket 43 and the second U-shaped bracket 54 to move in opposite directions or move in opposite directions, two ends of the first U-shaped bracket 53 are respectively provided with a first limiting assembly 55 and a second limiting assembly 56, and two ends of the second U-shaped bracket 54 are respectively provided with a third limiting assembly 57 and a fourth limiting assembly 58.
When the first U-shaped bracket 43 and the second U-shaped bracket 54 move in opposite directions, the first limiting assembly 55 and the third limiting assembly 57 move in opposite directions to correct the position of one half silicon wafer, and the second limiting assembly 56 and the fourth limiting assembly 58 move in opposite directions to correct the position of the other half silicon wafer, in this embodiment, the first U-shaped bracket 43 and the second U-shaped bracket 54 move in opposite directions, and meanwhile, correction is performed on the two silicon wafers, so that the working efficiency is improved.
In addition, in this embodiment, only one correction driving assembly 59 is needed to drive the first U-shaped bracket 43 and the second U-shaped bracket 54 to move in opposite directions, so that the cost is saved, the correction driving assembly 59 can adopt a motor combined with a belt transmission mode, and the upper and lower sides of the belt are respectively connected with the first U-shaped bracket 43 and the second U-shaped bracket 54, so that the first U-shaped bracket 43 and the second U-shaped bracket 54 are driven to move in opposite directions or move in opposite directions when the motor drives the belt.
In this embodiment, referring to fig. 6, the buffer mechanism 6 includes a buffer frame and a lifting driving assembly 61 for driving the buffer frame to lift, the buffer frame includes a connection frame 62 and three parallel connection plates 63 disposed at the bottom of the connection frame 62, the connection lines of the three connection plates 63 are parallel to the width direction of the feeding transmission line 1 or the discharging transmission line 2, two sides of two adjacent connection plates 63 in the three connection plates 63 facing each other are respectively provided with a plurality of ceramic rods 64 (i.e. two sides of the middle connection plate 63 are respectively provided with a ceramic rod 64), the inner sides (the side close to the middle connection plate 63) of the two connection plates 63 located at the outer sides are respectively provided with a ceramic rod 64, the rectangular arrays of the plurality of ceramic rods 64 are arranged (two rows of N columns, N is a natural number greater than 2), the two adjacent rows of ceramic rods 64 on the adjacent connection plates 63 are disposed at the same horizontal plane to form a buffer tank (the buffer frame is provided with 2 x (N-1) buffer tanks in total), two half pieces on two transmission lines in the feeding transmission line 1 or the discharging transmission line 2 can enter into the buffer tank of the same height at the same time to be kept, and silicon wafers enter the buffer tank 1 or the buffer tank 2 from the feeding transmission line 1 or the discharging transmission line 2 in turn, and the silicon wafers enter the buffer line 2 from the buffer frame to the buffer tank 2 in turn. The buffer mechanism 6 can prevent the silicon wafer from being bumped when the silicon wafer feeding speed is higher than the processing speed.
In this embodiment, referring to fig. 7, the NG discharging mechanism 9 includes a supporting frame 91, a sliding component 93, a grabbing component and a material box 97, the supporting frame 91 has a beam 92 located above the discharging transmission line 2, the sliding component 93 is disposed on the beam 92, the sliding component 93 may adopt a guide rail sliding block structure to combine with a cylinder, a linear motor and other power sources to drive the grabbing component to move in the width direction of the discharging transmission line 2, the grabbing component includes a lifting component 94, a supporting board 95 and a third vacuum chuck 96 connected to the bottom of the supporting board 95, the lifting component 94 may adopt a cylinder, a fixed end of the cylinder is fixedly connected with a sliding block in the sliding component 93, the supporting board 95 is fixed on a telescopic end of the cylinder, when a defective product is detected, the sliding component 93 drives the third vacuum chuck 96 to move to a position right above the conveying line, the cylinder drives the third vacuum chuck 96 to move downward, the third vacuum chuck 96 generates negative pressure to suck the defective product silicon wafer, then moves upward, the sliding component 93 drives the third vacuum chuck 96 to move to a position above the material box 97 located at one side of the discharging transmission line 2, and the defective product is removed from the material box 97.
Further, the number of the third vacuum chucks 96 is two, and the two third vacuum chucks 96 can simultaneously suck silicon wafers on two conveying lines in the blanking conveying line 2.
In addition, the hidden crack detection mechanism 7 and the AOI detection mechanism 8 in this embodiment are conventional apparatuses existing in the art, and therefore, a detailed description is omitted in this embodiment.
While the preferred embodiment of the present utility model has been described in detail, the present utility model is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present utility model, and these equivalent modifications or substitutions are included in the scope of the present utility model as defined in the appended claims.
Claims (10)
1. The utility model provides a half silicon chip processing transmission line, includes material loading transmission line, unloading transmission line, laser processing rotary platform and the transport mechanism that sets up side by side, its characterized in that: the feeding transmission line and the discharging transmission line comprise a plurality of conveying lines, the transferring mechanism comprises vacuum chucks, a support and a rotary driving assembly, the rotary driving assembly is used for driving the support to rotate, two mounting plates are arranged on the support, when one mounting plate is located at a station to be processed of the laser processing rotary platform, the other mounting plate is located right above a discharge end of the feeding transmission line or a feed end of the discharging transmission line, a plurality of vacuum chucks are fixedly mounted at the bottoms of the mounting plates, the vacuum chucks are arranged in a rectangular array, and two adjacent rows of vacuum chucks are located right above discharge ends of the two adjacent rows of conveying lines.
2. The half-wafer processing transmission line according to claim 1, wherein: the support comprises a support plate and two support arms extending from the support plate, wherein the included angle of the two support arms is 90 degrees, and the two mounting plates are respectively fixed at the tail ends of the two support arms.
3. A half-wafer processing transmission line according to claim 2, wherein: the rotary driving assembly comprises a control box and a rotary servo motor arranged in the control box, the supporting plate is rotationally connected to the top of the control box, and a main shaft of the rotary servo motor is connected with the supporting plate through a coupler.
4. The half-wafer processing transmission line according to claim 1, wherein: the device also comprises a butt clamp correcting mechanism, wherein the butt clamp correcting mechanism at least comprises two butt clamp correcting mechanisms, at least one butt clamp correcting mechanism is arranged on one side of the feeding transmission line and used for correcting the position of the silicon wafer on the feeding transmission line; and at least one butt clamp correcting mechanism is arranged on one side of the blanking transmission line and used for correcting the position of the silicon chip on the blanking transmission line.
5. The half-wafer processing transmission line according to claim 4, wherein: the butt-clamping correction mechanism comprises a bottom plate, a plurality of limiting pieces which are connected onto the bottom plate in a sliding mode and a rotary driving assembly which drives the limiting pieces to be close to or far away from each other, and the silicon wafers on a plurality of conveying lines of the feeding conveying line or the discharging conveying line are subjected to position correction when the limiting pieces are close to each other.
6. The half-wafer processing transmission line according to claim 1, wherein: the device also comprises a buffer mechanism, wherein the buffer mechanism at least comprises two buffer mechanisms; at least one buffer mechanism is arranged on one side of the feeding transmission line to buffer the silicon wafers to be transferred from the feeding transmission line to the laser processing station; and at least one buffer mechanism is arranged on one side of the blanking transmission line to buffer the silicon wafers to be transferred from the blanking transmission line to the subsequent stations.
7. The half-wafer processing transmission line according to claim 6, wherein: the buffer mechanism comprises a buffer frame and a lifting driving assembly for driving the buffer frame to lift, the buffer frame comprises a plurality of parallel connection plates, a plurality of ceramic rods are arranged on one sides of two adjacent connection plates facing each other, two ceramic rods located on the same horizontal line form a bearing part, when the buffer frame rises, a silicon wafer enters the bearing part from a feeding transmission line or a discharging transmission line, and when the buffer frame descends, the silicon wafer enters the feeding transmission line or the discharging transmission line from the bearing part.
8. The half-wafer processing transmission line according to claim 1, wherein: the device further comprises a hidden crack detection mechanism, wherein the hidden crack detection mechanism is arranged on one side of the feeding transmission line and used for detecting the silicon wafer.
9. The half-wafer processing transmission line according to claim 1, wherein: the device further comprises an AOI detection mechanism, wherein the AOI detection mechanism is arranged on one side of the blanking transmission line and used for detecting the surface of the silicon wafer.
10. The half-wafer processing transmission line according to claim 9, wherein: the device also comprises an NG discharging mechanism, wherein the NG discharging mechanism is arranged on one side of the discharging transmission line and is used for taking off the unqualified silicon chips detected by the AOI detecting mechanism from the discharging transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322148474.8U CN220627824U (en) | 2023-08-10 | 2023-08-10 | Half silicon chip processing transmission line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322148474.8U CN220627824U (en) | 2023-08-10 | 2023-08-10 | Half silicon chip processing transmission line |
Publications (1)
| Publication Number | Publication Date |
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| CN220627824U true CN220627824U (en) | 2024-03-19 |
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| CN202322148474.8U Active CN220627824U (en) | 2023-08-10 | 2023-08-10 | Half silicon chip processing transmission line |
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| CN (1) | CN220627824U (en) |
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2023
- 2023-08-10 CN CN202322148474.8U patent/CN220627824U/en active Active
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