CN220586159U - High-voltage pre-modulation circuit - Google Patents

High-voltage pre-modulation circuit Download PDF

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CN220586159U
CN220586159U CN202320841451.2U CN202320841451U CN220586159U CN 220586159 U CN220586159 U CN 220586159U CN 202320841451 U CN202320841451 U CN 202320841451U CN 220586159 U CN220586159 U CN 220586159U
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field effect
effect transistor
pole
resistance
tube
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王志亮
孙力
徐佳斌
章一鸣
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Nantong University
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Nantong University
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Abstract

The utility model relates to the technical field of electronic circuits, in particular to a high-voltage pre-modulation circuit. The problems of narrow range of the voltage of the power supply capable of being input, poor linearity, large temperature drift and low power supply rejection ratio are solved. The technical proposal is as follows: from power supply VDD, field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Field effect tube HN 1 Field effect tube HN 2 Field effect tube HN 3 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 Resistance R 10 Field effect tube HP 1 Field effect tube HP 2 Field effect transistor N 1 Field effect transistor N 2 Field effect transistor N 3 Field effect transistor N 4 Field effect transistor N 5 Triode NPN 1 Triode NPN 2 Composition is prepared. The utility model has the advantages of higher power supply rejection ratio and small variation amplitude along with temperature.

Description

High-voltage pre-modulation circuit
Technical Field
The utility model relates to the technical field of electronic circuits, in particular to a high-voltage pre-modulation circuit.
Background
In the paper: liu Lei research and design of high-voltage LDO [ D ]]University of electronics, 2021, and paper: yangqin, huang Zhengwu, musca, yang Hanfei, luo Xiao vehicle electronic clock control system design and development based on LIN bus [ J ]]Time automobiles, 2022 (03): 116-118, record ： The power supply voltage of the vehicle-mounted LIN bus chip is often provided by an automobile lithium battery, the power supply is high in noise and voltage, and a stable power supply cannot be directly provided for modules such as a band gap reference, a low-dropout linear voltage regulator and the like in the LIN bus chip, so that the high-voltage pre-modulation circuit is designed to serve as a buffer stage between the automobile lithium battery and the LIN bus chip. The differential power supply generated by the lithium battery of the automobile can output a relatively good power supply voltage after being preprocessed by the high-voltage pre-adjusting circuit, and the voltage is often used as an internal power supply in a high-voltage scene to supply power for modules such as a band-gap reference. However, the problems of narrow range of voltage of the power supply capable of being input, poor linearity, large temperature drift and low power supply rejection ratio exist at present.
Disclosure of Invention
The utility model aims to provide a high-voltage pre-modulation circuit. The problems of narrow input power supply voltage range, poor linearity, large temperature drift and low power supply rejection ratio in the prior art are solved, and the power supply has the advantages of higher power supply rejection ratio and small variation amplitude along with temperature.
In order to achieve the aim of the utility model, the utility model adopts the technical scheme that:
a high-voltage pre-modulation circuit comprises a power supply VDD and a field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Field effect tube HN 1 Field effect tube HN 2 Field effect tube HN 3 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 Resistance R 10 Field effect tube HP 1 Field effect tube HP 2 Field effect transistor N 1 Field effect transistor N 2 Field effect transistor N 3 Field effect transistor N 4 Field effect transistor N 5 Triode NPN 1 Triode NPN 2 The composition comprises: the bias circuit provides current and voltage bias for the high-voltage operational amplifier, the high-voltage operational amplifier outputs and controls the end G of the adjusting tube, and then the end S of the adjusting tube and the resistor R are adjusted 6 And the output end is connected with the input end of the high-voltage operational amplifier, and finally, negative feedback is formed, and the pre-reduced voltage is output at the S end of the adjusting tube and is provided for the inside of the chip.
Bias circuit is formed by field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Resistance R 4 Field effect tube HN 3 Field effect transistor N 4 Field effect transistor N 5 The composition is as follows:
field effect transistor P 1 The S electrode of (C) is connected with the power supply VDD, the G electrode is connected with the D electrode and is connected with the field effect transistor P 2 S pole of field effect transistor P 2 G pole and D pole of the transistor are connected to and connected to the field effect transistor P 3 S pole of field effect transistor P 3 G pole and D pole of the transistor are connected to the field effect tube HN 3 S pole of field effect tube HN 3 G pole of (2) is connected to field effect transistor N 4 The G pole and the D pole of the transistor are connected to the field effect transistor N 5 S pole of field effect transistor N 5 G-pole and field effect transistor N of (2) 4 G pole of (C) is connected with resistor R 4 One end is connected to the power supply VDD, and the other end is connected to the field effect transistor N 4 D pole of (D), field effect transistor N 4 The S pole of (2) is grounded.
High-voltage operational amplifier circuit resistor R 1 Resistance R 2 Resistance R 3 Field effect tube HP 1 Field effect tube HP 2 Field effect tube HN 2 Field effect transistor N 1 Field effect transistor N 2 Triode NPN 1 Triode NPN 2 Field effect transistor N 3 Resistance R 10 The composition is as follows:
resistor R 1 One end is connected with VDD and the other end is connected with electricityR resistance 2 And resistance R 3 Resistance R 2 Is connected to a field effect tube HP 1 The S pole, the G pole and the D pole are connected and connected to a field effect tube HN 2 And is connected to the D pole of the resistor P 3 G pole of field effect transistor NH 2 S electrode of (C) is connected to field effect transistor N 1 The D pole and the S pole of the (B) are connected with the NPN pole of the triode 1 Collector of triode NPN 1 Is connected with V REF Emitter electrode is connected with field effect transistor N 3 D pole of (D) and resistor R 10 Resistance R 10 One end is grounded, and the field effect tube N 3 The S electrode of (2) is grounded, and the G electrode is connected with the field effect transistor N 4 D pole of (D), resistance R 3 Connected to field effect transistor HP 2 The S pole and the G pole of the transistor are connected to the field effect transistor HP 1 G pole of (C), field effect tube HP 2 Is connected to the field effect transistor N 2 D pole of (D), field effect transistor N 2 The S pole of (C) is connected with triode NPN 2 Collector electrode of field effect transistor N 2 G electrode of (C) is connected with field effect transistor N 1 G pole, triode NPN 2 Is connected with triode NPN by emitter 1 Is provided.
The adjusting tube is an N-type field effect tube HN 1 。
The resistor feedback network consists of a resistor R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 The composition is as follows:
resistor R 5 One end connected with VDD and the other end connected with field effect tube HN 1 The D pole and the G pole of (C) are connected with a field effect tube HP 2 D, S pole of (C) is connected with resistor R 6 Field effect tube HN 2 G pole, resistance R 6 Termination resistor R 7 Field effect transistor N 2 G pole, resistance R 7 Termination resistor R 9 Resistor R 8 Resistance R 9 An NPN terminal connected with the triode 2 Base of (d), resistance R 8 One end of the power supply is grounded.
The power supply VDD voltage is at least greater than 12V.
Compared with the prior art, the utility model has the beneficial effects that:
1. the vehicle-mounted lithium battery is used for providing power supply voltage for the vehicle-mounted chip, the voltage of the lithium battery is at least more than 12V, and a high-voltage process (High voltage process) is used, so that high withstand voltage can be realized, and the voltage of up to 55V can be born.
2. Compared with the traditional pre-step-down circuit, the voltage output by the pre-step-down circuit is more linear, smoother and more stable.
3. Compared with the traditional pre-step-down circuit, the pre-step-down circuit has wider range of selectable input power supply voltage.
4. Compared with the traditional pre-step-down circuit, the pre-step-down circuit has higher power supply rejection ratio.
5. Compared with the traditional pre-step-down circuit, the pre-step-down circuit has small amplitude along with temperature change.
6. Using N-type field effect tube HN 1 As an adjusting tube of the LDO, the buffer has the advantages that the buffer driving capability is stronger due to the equivalent of NMOS and feedback resistance. Advantage 2, the majority carrier of the nmos is electron PMOS and the majority carrier of the nmos is hole. The mobility of electrons is several times of that of holes, so that the conductivity of the NMOS as an adjusting tube is stronger. The advantage 3, the source electrode of PMOS connects the power and its working condition is easy to be changed by the change of the supply voltage, so NMOS is better than PMOS's power to inhibit than.
Drawings
The accompanying drawings are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate the utility model and together with the embodiments of the utility model, serve to explain the utility model.
FIG. 1 is a schematic diagram of a high voltage pre-modulation circuit according to the present utility model.
FIG. 2 is a graph of simulation output of the 0-55V high voltage pre-modulation circuit of the present utility model.
FIG. 3 is a graph of the output simulation of the high voltage pre-modulation circuit of the present utility model at-40 deg.C to 150 deg.C.
Fig. 4 is a simulation graph of the TT process corner fast power-up of the utility model.
FIG. 5 is a simulation graph of the TT process corner power supply rejection ratio of the utility model.
FIG. 6 is a graph of simulation of the TT process corner leakage voltage of the present utility model, (a) is shown in the following three formulasPolar tube NPN 1 When the base is not input, the amplitude-frequency characteristic simulation curve diagram in the negative feedback loop in the high-voltage pre-modulation is (b) that when the triode NPN is 1 When the base electrode has input, the amplitude-frequency characteristic simulation curve graph in the negative feedback loop in the high-voltage pre-modulation is provided.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. Of course, the specific embodiments described herein are for purposes of illustration only and are not intended to limit the utility model.
As shown in FIG. 1, a high voltage pre-modulation circuit comprises a power supply VDD, a field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Field effect tube HN 1 Field effect tube HN 2 Field effect tube HN 3 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 Resistance R 10 Field effect tube HP 1 Field effect tube HP 2 Field effect transistor N 1 Field effect transistor N 2 Field effect transistor N 3 Field effect transistor N 4 Field effect transistor N 5 Triode NPN 1 Triode NPN 2 The composition comprises: the bias circuit provides current and voltage bias for the high-voltage operational amplifier, the high-voltage operational amplifier outputs and controls the end G of the adjusting tube, and then the end S of the adjusting tube and the resistor R are adjusted 6 And the output end is connected with the input end of the high-voltage operational amplifier, and finally, negative feedback is formed, and the pre-reduced voltage is output at the S end of the adjusting tube and is provided for the inside of the chip.
Bias circuit is formed by field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Resistance R 4 Field effect tube HN 3 Field effect transistor N 4 Field effect transistor N 5 The composition is as follows:
field effect transistor P 1 The S electrode of (2) is connected with the power supply VDD, and the G electrode is connected with the D electrodeTo field effect transistor P 2 S pole of field effect transistor P 2 G pole and D pole of the transistor are connected to and connected to the field effect transistor P 3 S pole of field effect transistor P 3 G pole and D pole of the transistor are connected to the field effect tube HN 3 S pole of field effect tube HN 3 G pole of (2) is connected to field effect transistor N 4 The G pole and the D pole of the transistor are connected to the field effect transistor N 5 S pole of field effect transistor N 5 G-pole and field effect transistor N of (2) 4 G pole of (C) is connected with resistor R 4 One end is connected to the power supply VDD, and the other end is connected to the field effect transistor N 4 D pole of (D), field effect transistor N 4 The S pole of (2) is grounded.
High-voltage operational amplifier circuit resistor R 1 Resistance R 2 Resistance R 3 Field effect tube HP 1 Field effect tube HP 2 Field effect tube HN 2 Field effect transistor N 1 Field effect transistor N 2 Triode NPN 1 Triode NPN 2 Field effect transistor N 3 Resistance R 10 The composition is as follows:
resistor R 1 One end is connected with VDD and the other end is connected with resistor R 2 And resistance R 3 Resistance R 2 Is connected to a field effect tube HP 1 The S pole, the G pole and the D pole are connected and connected to a field effect tube HN 2 And is connected to the D pole of the resistor P 3 G pole of field effect tube HN 2 S electrode of (C) is connected to field effect transistor N 1 The D pole and the S pole of the (B) are connected with the NPN pole of the triode 1 Collector of triode NPN 1 Is connected with V REF Emitter electrode is connected with field effect transistor N 3 D pole of (D) and resistor R 10 Resistance R 10 One end is grounded, and the field effect tube N 3 The S electrode of (2) is grounded, and the G electrode is connected with the field effect transistor N 4 D pole of (D), resistance R 3 Connected to field effect transistor HP 2 The S pole and the G pole of the transistor are connected to the field effect transistor HP 1 G pole of (C), field effect tube HP 2 Is connected to the field effect transistor N 2 D pole of (D), field effect transistor N 2 The S pole of (C) is connected with triode NPN 2 Collector electrode of field effect transistor N 2 G electrode of (C) is connected with field effect transistor N 1 G pole, triode NPN 2 Is connected with triode NPN by emitter 1 Is provided.
The adjusting tube is an N-type field effect tube HN 1 。
The resistor feedback network consists of a resistor R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 The composition is as follows:
resistor R 5 One end connected with VDD, the other end connected with D pole of field effect tube HN1, and G pole connected with field effect tube HP 2 D, S pole of (C) is connected with resistor R 6 Field effect tube HN 2 G pole, resistance R 6 Termination resistor R 7 Field effect transistor N 2 G pole, resistance R 7 Termination resistor R 9 Resistor R 8 Resistance R 9 An NPN terminal connected with the triode 2 Base of (d), resistance R 8 One end of the power supply is grounded.
In the application scenario of the vehicle-mounted chip, the power supply voltage VDD provided by the vehicle-mounted lithium battery is at least greater than 12V.
The bias circuit is a field effect tube HP when the band gap reference does not work normally, and the non-inverting input end of the high-voltage operational amplifier does not input at the moment 1 Field effect tube HP 2 Providing a gate bias voltage, and the field effect transistor HP 2 Field effect transistor N 2 Triode NPN 2 Field effect transistor N 3 Field effect tube HN 1 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 Resistance R 10 Forms a simple LDO loop with negative feedback and a certain loop gain, so the field effect tube HN 1 Is used as power supply voltage for band-gap reference, and after the band-gap reference is normally operated, it is used for NPN transistor 1 Providing base voltage bias, normal operation of the high voltage operational amplifier, and field effect transistor HN 1 The feedback resistor forms a high voltage LDO. Finally, under the condition of 5.5V-55V of power supply voltage, the high voltage adjusting tube HN is arranged after the conduction time sequence 1 And outputting a stable 3.3V as an internal power supply of the MCU.
Using N-type field effect tube HN 1 As an adjusting tube of the LDO, the advantages of 1, NMOS and feedback resistance are equivalent to stronger buffer driving capability. Advantage 2, the majority carrier of the nmos is electron PMOS and the majority carrier of the nmos is hole. The mobility of electrons is several times of that of holes, so that the conductivity of the NMOS as an adjusting tube is stronger. The advantage 3, the source electrode of PMOS connects the power and its working condition is easy to be changed by the change of the supply voltage, so NMOS is better than PMOS's power to inhibit than.
High-voltage operational amplifier circuit adopting field effect transistor HP 1 Field effect tube HP 2 Field effect tube HN 1 Therefore, the common MOS transistor and the high-voltage power supply voltage can be isolated to play a role in protection, and meanwhile, the bipolar transistor is selected as a differential input tube of the high-voltage operational amplifier, so that the operational amplifier speed can be improved, and the influence on the band gap reference temperature coefficient is reduced. Non-high voltage device FET N 1 Field effect transistor N 2 Triode NPN 1 Triode NPN 2 Field effect transistor N 3 Can work normally without breakdown by high voltage power supply. Except for the equivalent LDO itself and the field effect transistor HN 1 The negative feedback is formed, two negative feedback loops are also provided,
negative feedback of the high-voltage preconditioning itself:
when the load changes, the field effect tube HN is induced 1 The source potential of (2) rises, the voltage divided across the resistor network V FB Will also rise, this V FB Reverse input end triode NPN as high-voltage operational amplifier 2 Base bias voltage of (2) and non-inverting input terminal triode NPN of high-voltage operational amplifier 1 V generated by the base bias voltage of (2) as the bandgap reference REF Therefore, the output voltage of the high-voltage operational amplifier is pulled down at this time, and the output voltage is used as the field effect transistor HN 1 Gate bias voltage of field effect transistor HN 1 And the feedback resistor is equivalent to a buffer, and finally. Field effect tube HN caused by load change 1 Is suppressed by negative feedback.
Negative feedback 2:
when the load changes, the field effect tube HN is induced 1 The source potential of (a) rises, which results in a field effect transistor N 2 By a field effect transistor N 2 For the field effect transistor N of the input tube 2 Field effect transistorHP 2 Triode NPN 2 The branch can be equivalently used as a common source amplifier with a MOS tube as a load, so that the field effect tube N 2 Is caused by the rise of the gate voltage of the field-effect transistor HP 2 The drain voltage of (1) is pulled down, and the output voltage is used as the field effect transistor HN 1 Gate bias voltage of field effect transistor HN 1 And the feedback resistor is equivalent to a buffer, and finally. Field effect tube HN caused by load change 1 Is suppressed by negative feedback.
Negative feedback 3:
when the load changes, the field effect tube HN is induced 1 The source potential of (a) rises, which results in a field effect transistor N 1 Field effect tube HN 1 By a field effect transistor N 1 Or field effect tube NH 1 As an input tube, a field effect tube HN 2 Field effect transistor N 1 Triode NPN 1 The branches can be equivalent to common source amplifiers with MOS tubes as loads, so the field effect tube HP 2 The drop in gate terminal voltage of (c) will result in a field effect transistor HP 2 The drain voltage of (1) is pulled down and then used as the field effect tube HN 1 Gate bias voltage of field effect transistor HN 1 And the feedback resistor is equivalent to a buffer, and finally. Field effect tube HN caused by load change 1 Is suppressed by negative feedback.
As shown in fig. 2, a process angle TT (Typical in a modeling simulation) is set in a simulation, the power supply voltage at 25 ℃ rises from 0 to 55V, and as shown in the drawing, the high-voltage pre-modulation module outputs pre-stabilized voltage of 3.06V when the input power supply voltage is 5.5V; the output pre-voltage was 3.27V when the input supply voltage was up to 55V. The high voltage pre-modulation module can provide an output pre-voltage of about 3.3V or so within 5.5V-55V.
As shown in FIG. 3, when the temperature range of the TT process corner power supply voltage 55V is set to be-40-150 ℃, the output end voltage of the high-voltage pre-modulation and high-voltage LDO is changed along with the temperature. As shown, the high pressure preconditioning outputs V at-40℃ OUT.3.3V =3.71V; at normal temperature of 25 ℃, output V OUT.3.3V =3.28v; at 150 ℃, output V OUT.3.3V ＝2.99V。
As shown in FIG. 4, when the power voltage is increased from 0V to 55V within 500nS at the TT process angle of 25 ℃ and is quickly powered on, the power-on speed is high-voltage pre-modulation and TRAN simulation of the high-voltage LDO, and when the power-on speed is 11 mu s, the output voltage V is high-voltage pre-modulation OUT.3.3V ＝3.27V。
As shown in FIG. 5, when the TT process angle is set to 55V of power supply voltage at 25 ℃, the power supply rejection ratio of high-voltage pre-modulation at 10Hz, 100Hz and 1KHz is 70dB.
As shown in FIG. 6, when the simulation setting TT process angle is 25 ℃ and the power supply voltage is 55V, 6 (a) is when the triode NPN 1 When the base is not input, the amplitude-frequency characteristic simulation graph in the negative feedback loop in the high-voltage pre-modulation is shown as the graph, the gain of the loop at the low frequency is 37.89dB, and when the gain is 0dB, the phase margin is 83 degrees, and the product of the unit gain bandwidth is 1.2MHz. When the TT process angle is set in a simulation way and the power supply voltage is 55V at 25 ℃,6 (b) is that when the triode NPN 1 When the base electrode is input, the amplitude-frequency characteristic simulation graph in the negative feedback loop in the high-voltage pre-modulation is shown as the graph, the gain of the loop at the low frequency is 45dB, and when the gain is 0dB, the phase margin is 93 degrees, and the product of the unit gain bandwidth is 886KHz. Compared with triode NPN 1 When the base is not input, the high-voltage operational amplifier enters the working point, so that the high-voltage operational amplifier has higher low-frequency gain, and the increase of the gain leads to the rise of the phase margin and the reduction of the unit gain bandwidth product.
The foregoing description of the preferred embodiments of the utility model is not intended to limit the utility model to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the utility model are intended to be included within the scope of the utility model.

Claims (6)

1. A high-voltage pre-modulation circuit is characterized by comprising a power supply VDD and a field effect transistor P 1 Field effect transistor P 2 Field effect transistor P 3 Field effect tube HN 1 Field effect tube HN 2 Field effect tube HN 3 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 Resistance R 10 Field effect tube HP 1 Field effect tube HP 2 Field effect transistor N 1 Field effect transistor N 2 Field effect transistor N 3 Field effect transistor N 4 Field effect transistor N 5 Triode NPN 1 Triode NPN 2 The composition comprises: the bias circuit provides current and voltage bias for the high-voltage operational amplifier, the high-voltage operational amplifier outputs and controls the end G of the adjusting tube, and then the end S of the adjusting tube and the resistor R are adjusted 6 And the output end is connected with the input end of the high-voltage operational amplifier, and finally, negative feedback is formed, and the pre-reduced voltage is output at the S end of the adjusting tube and is provided for the inside of the chip.
2. A high voltage pre-modulation circuit according to claim 1 wherein the biasing circuit is formed by a fet P 1 Field effect transistor P 2 Field effect transistor P 3 Resistance R 4 Field effect tube HN 3 Field effect transistor N 4 Field effect transistor N 5 The composition is as follows:
field effect transistor P 1 The S electrode of (C) is connected with the power supply VDD, the G electrode is connected with the D electrode and is connected with the field effect transistor P 2 S pole of field effect transistor P 2 G pole and D pole of the transistor are connected to and connected to the field effect transistor P 3 S pole of field effect transistor P 3 G pole and D pole of the transistor are connected to the field effect tube HN 3 S pole of field effect tube HN 3 G pole of (2) is connected to field effect transistor N 4 The G pole and the D pole of the transistor are connected to the field effect transistor N 5 S pole of field effect transistor N 5 G-pole and field effect transistor N of (2) 4 G pole of (C) is connected with resistor R 4 One end is connected to the power supply VDD, and the other end is connected to the field effect transistor N 4 D pole of (D), field effect transistor N 4 The S pole of (2) is grounded.
3. A high voltage pre-modulation circuit according to claim 1 wherein the high voltage operational discharge circuit is defined by a resistor R 1 Resistance R 2 Resistance R 3 Field effect tube HP 1 Field effectPipe HP 2 Field effect tube HN 2 Field effect transistor N 1 Field effect transistor N 2 Triode NPN 1 Triode NPN 2 Field effect transistor N 3 Resistance R 10 The composition is as follows:
resistor R 1 One end is connected with VDD and the other end is connected with resistor R 2 And resistance R 3 Resistance R 2 Is connected to a field effect tube HP 1 The S pole, the G pole and the D pole are connected and connected to a field effect tube HN 2 And is connected to the D pole of the resistor P 3 G pole of field effect transistor NH 2 S electrode of (C) is connected to field effect transistor N 1 The D pole and the S pole of the (B) are connected with the NPN pole of the triode 1 Collector of triode NPN 1 Is connected with V REF Emitter electrode is connected with field effect transistor N 3 D pole of (D) and resistor R 10 Resistance R 10 One end is grounded, and the field effect tube N 3 The S electrode of (2) is grounded, and the G electrode is connected with the field effect transistor N 4 D pole of (D), resistance R 3 Connected to field effect transistor HP 2 The S pole and the G pole of the transistor are connected to the field effect transistor HP 1 G pole of (C), field effect tube HP 2 Is connected to the field effect transistor N 2 D pole of (D), field effect transistor N 2 The S pole of (C) is connected with triode NPN 2 Collector electrode of field effect transistor N 2 G electrode of (C) is connected with field effect transistor N 1 G pole, triode NPN 2 Is connected with triode NPN by emitter 1 Is provided.
4. The high voltage pre-modulation circuit of claim 1, wherein the tuning tube is an N-type field effect tube HN 1 。
5. A high voltage pre-modulation circuit according to claim 1 wherein the resistive feedback network is formed by a resistor R 5 Resistance R 6 Resistance R 7 Resistance R 8 Resistance R 9 The composition is as follows:
resistor R 5 One end connected with VDD and the other end connected with field effect tube HN 1 The D pole and the G pole of (C) are connected with a field effect tube HP 2 D, S pole of (C) is connected with resistor R 6 Field effect tube HN 2 G pole, resistance R 6 Termination resistor R 7 Field effect transistor N 2 G pole, resistance R 7 Termination resistor R 9 Resistor R 8 Resistance R 9 An NPN terminal connected with the triode 2 Base of (d), resistance R 8 One end of the power supply is grounded.
6. A high voltage pre-modulation circuit according to claim 1 wherein the power supply VDD voltage is at least 12V.
CN202320841451.2U 2023-04-14 2023-04-14 High-voltage pre-modulation circuit Active CN220586159U (en)

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