CN220092386U - Degumming system for cut silicon single crystal rod - Google Patents
Degumming system for cut silicon single crystal rod Download PDFInfo
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- CN220092386U CN220092386U CN202321565308.1U CN202321565308U CN220092386U CN 220092386 U CN220092386 U CN 220092386U CN 202321565308 U CN202321565308 U CN 202321565308U CN 220092386 U CN220092386 U CN 220092386U
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- crystal rod
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 100
- 239000010703 silicon Substances 0.000 title claims abstract description 100
- 239000013078 crystal Substances 0.000 title claims abstract description 94
- 238000010438 heat treatment Methods 0.000 claims abstract description 143
- 238000005520 cutting process Methods 0.000 claims abstract description 32
- 238000005265 energy consumption Methods 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 132
- 235000012431 wafers Nutrition 0.000 description 28
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 239000003292 glue Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of silicon single crystal rod processing, in particular to a degumming system for cut silicon single crystal rods, which comprises the following components: the heating degumming module comprises a heating container and a gas heating unit, and the gas heating unit is arranged in the heating container; the air supply module comprises an air source and an air inlet pipe, the air inlet end of the air inlet pipe is communicated with the air source, and the air outlet end of the air inlet pipe is communicated with the heating container; and the silicon single crystal rod fixing module is arranged in the heating container and is suitable for fixing a silicon single crystal rod. The degumming system for the silicon single crystal rod after cutting can improve the degumming efficiency and reduce the degumming energy consumption.
Description
Technical Field
The utility model relates to the technical field of silicon single crystal rod processing, in particular to a degumming system for cut silicon single crystal rods.
Background
Before cutting, the silicon single crystal rod needs to be adhered to a fixing plate (such as a resin plate) for fixing by using special glue, and after cutting, the silicon single crystal rod needs to be separated from the fixing plate.
Because the glue for adhering and fixing the silicon single crystal rod can be softened in hot water, the separation of the fixing plate and the silicon wafer can be realized by utilizing different thermal expansion ratios of the glue and the silicon wafer. In the prior art, the above object is generally achieved by using a manual hot bath process, however, the conventional manual hot bath process has the following drawbacks: 1. the degumming time is longer; 2. the degelling agent is difficult to permeate into the central position of the silicon wafer, and PEG solution (polyethylene glycol solution) for cutting is combined with an oxide film on the surface of the silicon wafer in hot water, so that the silicon wafer is difficult to be adsorbed on the surface of the silicon wafer for subsequent cleaning; 3. the tank body adopted by the hot bath is communicated with the outside environment, so that the heat loss is high and the energy consumption is high; 4. the hands of operators are contacted with hot water, so that certain potential safety hazards exist. Therefore, the manual hot bath process degumming mode in the prior art is difficult to adapt to mass production of large-size silicon wafers.
In view of the foregoing, there is a need for improvements in the degumming process and apparatus of the prior art to solve the above-mentioned problems.
Disclosure of Invention
The first aspect of the utility model provides a degumming system for silicon single crystal rods after cutting, which can improve the degumming efficiency and reduce the degumming energy consumption.
The utility model provides a degumming system for cut silicon single crystal rods, which comprises:
the heating degumming module comprises a heating container and a gas heating unit, and the gas heating unit is arranged in the heating container;
the air supply module comprises an air source and an air inlet pipe, the air inlet end of the air inlet pipe is communicated with the air source, and the air outlet end of the air inlet pipe is communicated with the heating container;
and the silicon single crystal rod fixing module is arranged in the heating container and is suitable for fixing a silicon single crystal rod.
According to the degumming system for the silicon single crystal rod after cutting, the gas heating unit comprises a plurality of gas heating covers, each gas heating cover is internally provided with a gas heating device, all the gas heating covers are communicated with the gas outlet end of the gas inlet pipe, and the gas heating covers are provided with gas outlet holes.
According to the degumming system for the cut silicon single crystal rod, the gas heating unit comprises a first gas heating cover and a second gas heating cover, the first gas heating cover and the second gas heating cover are respectively arranged on two sides of the silicon single crystal rod fixing module, and the gas outlet hole is arranged on one side, facing the silicon single crystal rod fixing module, of the gas heating cover.
According to the degumming system for the silicon single crystal rod after cutting, the gas supply module further comprises a gas circulation pipe, the gas circulation pipe is provided with a one-way valve, the gas inlet end of the gas circulation pipe is communicated with the heating container, and the gas outlet end of the gas circulation pipe is communicated with the gas inlet pipe.
According to the degumming system for the silicon single crystal rod after cutting, the air inlet pipe is provided with the gas preheating device, and the gas preheating device is arranged at the downstream of the joint of the gas circulating pipe and the air inlet pipe.
According to the degumming system for the silicon single crystal rod after cutting, the heating container is internally provided with the temperature sensor and/or the air pressure sensor.
According to the degumming system after cutting the silicon single crystal rod, the silicon single crystal rod fixing module comprises a bottom plate, two sides of the bottom plate are respectively provided with a side fixing bracket, and a fixing groove suitable for fixing the silicon single crystal rod is formed between the two side fixing brackets.
According to the degumming system for the silicon single crystal rod after cutting, the wafer pressure sensor which is suitable for detecting the wafer pressure is arranged on the side fixing support.
According to the degumming system for the silicon single crystal rod after cutting, the gas heating unit is used for heating the gas which is fed into the heating container through the gas source, and the heated working gas is used for degumming the silicon single crystal rod arranged in the heating container, so that water is not required to be consumed in the process, and the heating efficiency is high and the energy consumption is low because the specific heat capacity of the working gas is far smaller than that of the water. Compared with the manual hot bath process in the prior art, the degumming system for the silicon single crystal rod after cutting can remarkably improve the degumming efficiency, reduce the degumming energy consumption, avoid operators from contacting with high-temperature mixed solution, and reduce the occurrence of safety accidents.
Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.
Drawings
In order to more clearly illustrate the utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a degumping system after cutting a silicon single crystal rod according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a heating degum module in a degum system for silicon single crystal rods after cutting according to an embodiment of the present utility model;
FIG. 3 is a schematic view of a heating vessel in a degumming system for a silicon single crystal rod cut according to an embodiment of the present utility model;
FIG. 4 is a schematic view of a silicon single crystal rod fixing module in a silicon single crystal rod cutting and degumming system according to an embodiment of the present utility model;
FIG. 5 is a schematic view showing a silicon single crystal rod fixing module for fixing a crystal rod in a degumming system after cutting a silicon single crystal rod according to an embodiment of the present utility model;
FIG. 6 is a flow chart of a degumping and stripping process based on a degumping system after cutting a silicon single crystal rod according to an embodiment of the present utility model;
FIG. 7 is a schematic loading of a silicon single crystal rod;
FIG. 8 is a flow chart of the process gas in the system at degumming.
Reference numerals:
1. heating the container; 2. a gas source; 3. an air inlet pipe; 4. a first movable door; 5. a second movable door; 6. a gas heating device; 7. a first gas heating mantle; 8. a second gas heating mantle; 9. a gas circulation pipe; 10. a one-way valve; 11. a gas preheating device; 12. a temperature sensor; 13. an air pressure sensor; 14. a bottom plate; 15. a side fixing bracket; 16. a wafer pressure sensor; 17. a silicon single crystal rod; 18. a fixing plate; 19. and a crystal support.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The degumming system after cutting the silicon single crystal rod provided by the utility model is described below with reference to fig. 1 to 8.
As shown in fig. 1, the present utility model provides a degumming system for a silicon single crystal rod after cutting, comprising a heating degumming module, a gas supply module and a silicon single crystal rod fixing module.
The heating degumming module comprises a heating container 1 and a gas heating unit, wherein the gas heating unit is arranged in the heating container 1; the air supply module comprises an air source 2 and an air inlet pipe 3, the air inlet end of the air inlet pipe 3 is communicated with the air source 2, and the air outlet end of the air inlet pipe 3 is communicated with the heating container 1; a silicon single crystal rod fixing module is provided in the heating container 1, the silicon single crystal rod fixing module being adapted to fix the silicon single crystal rod 17.
In the embodiment of the present utility model, as shown in fig. 3, the heating vessel 1 has a hollow rectangular parallelepiped structure, which facilitates the installation and arrangement of the gas heating unit and the silicon single crystal rod 17, and has a top wall provided with a first movable door 4, and one side wall provided with a second movable door 5, and both the first movable door 4 and the second movable door 5 can be opened or closed, so as to facilitate the transfer of the silicon single crystal rod 17.
In the specific embodiment of the utility model, the working gas can be inert gas, the inert gas has stable property, and the silicon wafer can be isolated from air in the degumming process to prevent the silicon wafer from oxidation.
According to the degumming system for the silicon single crystal rod after cutting, the gas heating unit is used for heating the gas which is fed into the heating container 1 through the gas source 2, and the heated working gas is used for degumming the silicon single crystal rod 17 arranged in the heating container 1, so that water is not required to be consumed in the process, and the heating efficiency is high and the energy consumption is low because the specific heat capacity of the working gas is far smaller than that of water. Compared with the manual hot bath process in the prior art, the degumming system for the silicon single crystal rod after cutting can remarkably improve the degumming efficiency, reduce the degumming energy consumption, avoid operators from contacting with high-temperature mixed solution, and reduce the occurrence of safety accidents.
In the embodiment of the utility model, the gas heating unit comprises a plurality of gas heating covers, each gas heating cover is internally provided with a gas heating device 6, all the gas heating covers are communicated with the gas outlet end of the gas inlet pipe 3, and the gas heating covers are provided with gas outlet holes. Specifically, the gas heating cover is buckled on the inner wall of the heating container 1 to form a heating space for heating gas, the gas heating device 6 adopts an electric heating wire, after the gas is introduced into the gas heating cover through the gas inlet pipe 3, the gas is heated to a set temperature under the action of the electric heating wire arranged in the gas heating cover and enters the heating container 1 through the gas outlet hole to degum the silicon single crystal rod 17, and a plurality of gas heating covers can be arranged on different wall surfaces of the heating container 1 to introduce high-temperature working gas in different directions of the silicon single crystal rod 17, so that the degumping efficiency can be effectively improved.
As shown in fig. 1 to 3, in a further embodiment of the present utility model, the gas heating unit includes a first gas heating mantle 7 and a second gas heating mantle 8, the first gas heating mantle 7 and the second gas heating mantle 8 are respectively disposed at both sides of the silicon single crystal rod fixing module, and the gas outlet holes are disposed at a side of the gas heating mantle facing the silicon single crystal rod fixing module. By the arrangement, high-temperature working gas can be simultaneously introduced to the two sides of the silicon single crystal rod 17, so that the degumming efficiency of the silicon single crystal rod 17 can be effectively improved on the premise of arranging a small number of gas heating hoods.
As shown in fig. 1, in some embodiments of the present utility model, the gas supply module further includes a gas circulation pipe 9, a check valve 10 is provided on the gas circulation pipe 9, an inlet end of the gas circulation pipe 9 is communicated with the heating container 1, and an outlet end of the gas circulation pipe 9 is communicated with the gas inlet pipe 3. Through setting up gas circulation pipe 9, can carry out the pressure release processing to the heating melter through the check valve 10 that sets up on it, make the atmospheric pressure in the heating container 1 keep stable to the working gas that has the waste heat of gas circulation pipe 9 discharge gets into the working container again through intake pipe 3 in the middle of the recycling. Namely, by arranging the gas circulation pipe 9, the pressure relief and pressure stabilization effects on the heating container 1 can be achieved, and the waste heat in the working gas discharged by pressure relief can be utilized, so that the energy consumption of the system is reduced.
As shown in fig. 1, in some embodiments of the present utility model, a gas preheating device 11 is disposed on the gas inlet pipe 3, and the gas preheating device 11 is disposed downstream of the connection between the gas circulation pipe 9 and the gas inlet pipe 3. The gas heating device 6 can preheat the working gas, and the working gas can be quickly heated to the set temperature after entering the gas heating device 6, so that the defect that the working gas enters the heating container 1 without being heated to the set temperature in the gas heating device 6 due to the too fast flow rate of the working gas can be overcome. In addition, since the gas preheating device 11 is disposed at the downstream of the connection between the gas circulation pipe 9 and the gas inlet pipe 3, the gas preheating device 11 can reheat the circulating working gas (with the temperature close to the set temperature), and under some working conditions, the gas heating device 6 can be turned off, and the circulating working gas is heated only by the gas preheating device 11, so that the degumming effect on the silicon single crystal rod 17 can be achieved, and the energy consumption of the system can be further reduced.
It is envisioned that in some embodiments, insulation layers may be provided on the outer walls of the heating vessel 1, the air inlet pipe 3 and the gas circulation pipe 9, so as to reduce the heat exchange amount between the system and the external environment and reduce the heat loss of the system. In some embodiments, the heating container 1, the air inlet pipe 3 and the gas circulation pipe 9 can be made of heat insulation materials, and heat loss of the system can be reduced.
As shown in fig. 1 and 2, in some embodiments of the present utility model, a temperature sensor 12 and an air pressure sensor 13 are provided in the heating container 1. The temperature sensor 12 and the air pressure sensor 13 can respectively detect the temperature and the air pressure in the heating container 1, and can display the temperature and the air pressure in the heating container 1 through the terminal so as to monitor the working condition of the heating container 1. Of course, in some embodiments, only the temperature sensor 12 or only the air pressure sensor 13 may be provided according to actual requirements.
As shown in fig. 4 and 5, in the specific embodiment of the present utility model, the silicon single crystal rod fixing module includes a base plate 14, side fixing brackets 15 are provided on both sides of the base plate 14, respectively, and a fixing groove adapted to fix the silicon single crystal rod 17 is formed between the two side fixing brackets 15. The fixed slot can effectively limit and fix the silicon single crystal rod 17, has a simple structure, is convenient to set in the heating container 1, has good fixing effect, and can prevent the wafer from being broken and cracked due to the falling of the wafer in the degumming process. In some embodiments, the bottom plate 14 may be fixedly provided to the bottom wall of the heating vessel 1 by welding or bolting, preventing displacement thereof during operation.
In a further embodiment of the utility model, as shown in fig. 4, a wafer pressure sensor 16 adapted to detect wafer pressure is provided on the side mounting bracket 15. After the wafer is peeled off and fallen off from the mounting plate, the wafer can topple over to the side, and the pressure action is exerted on the wafer pressure sensor 16 arranged on the side fixing support 15, when the wafer pressure sensor 16 detects that the pressure reaches a set value, the wafer is completely fallen off from the fixing plate 18, and the wafer can be used as a signal for ending the system operation, so that the system can realize automatic and intelligent degumming treatment.
The degumming and stripping process based on the degumming system after cutting a silicon single crystal rod according to the present utility model will be described below, and the degumming and stripping process may correspond to the degumming system after cutting a silicon single crystal rod according to the above embodiment with reference to each other.
As shown in fig. 6, the present utility model also provides a degumping and peeling process based on the degumping system after cutting a silicon single crystal rod according to any one of the above embodiments, comprising:
s1, fixedly arranging a silicon single crystal rod 17 adhered and fixed on a fixing plate 18 on a silicon single crystal rod fixing module;
s2, introducing working gas into the heating container 1 through the gas source 2, and heating the working gas through the heating unit;
s3, degumming the silicon single crystal rod 17 by the heated working gas, and ending the degumming when the pressure of the wafer pressure sensor 16 reaches a set value.
Specifically, the process of finishing the degumming treatment includes turning off the gas heating device 6, turning off the gas source 2, and transferring the degummed wafer together with the fixing plate 18 and the wafer support 19 to the wafer disassembling device for post-treatment.
As shown in fig. 8, in the degumming stripping process based on the degumming system after cutting the silicon single crystal rod, the gas heating unit is used for heating the gas which is fed into the heating container 1 through the gas source 2, and the heated working gas is used for degumming the silicon single crystal rod 17 arranged in the heating container 1, so that water is not required to be consumed in the process, and the specific heat capacity of the working gas is far smaller than that of water, so that the heating efficiency is high, and the energy consumption is low. Moreover, by collecting the pressure value of the wafer pressure sensor 16, the pressure value can be used as a signal for ending the system operation, so that the system can realize automation and intelligent degumming treatment.
As shown in fig. 7, before the silicon single crystal rod 17 is wire-cut, glue is generally used to adhere and fix the silicon single crystal rod to the fixing plate 18, and the fixing plate 18 is disposed on the susceptor 19, and both the fixing plate 18 and the susceptor 19 form a crystal rod fixing fixture. After the linear cutting of the silicon single crystal rod 17 is completed, the silicon single crystal rod 17 after rough washing is required to be transferred into the heating container 1 together with the crystal support 19 through the fixing plate 18, and is fixed through the silicon single crystal rod fixing module.
In a specific embodiment of the present utility model, a robot arm may be used to transfer the silicon single crystal rod 17 (together with the fixing plate 18 and the susceptor 19), so that the transfer efficiency can be improved.
In some embodiments of the present utility model, between the step S1 and the step S2, further includes:
heating the heating container 1 by a heating unit to raise the temperature in the heating container 1 to a first set temperature; starting a preheating device on the air inlet pipe 3, and increasing the temperature in the container 1 to be heated to a second set temperature; and opening the gas source 2 to introduce working gas into the heating container 1.
As an example, first, the heating container 1 is subjected to a heating treatment by the gas heating device 6, and the temperature inside the heating container 1 is raised to 75 ℃; secondly, starting a preheating device on the air inlet pipe 3, and increasing the temperature in the container 1 to be heated to 95 ℃; finally, the gas source 2 introduces working gas into the heating container 1. In this way, a working environment suitable for degumming treatment can be created in the heating container 1, the temperature of the silicon single crystal rod 17 arranged in the heating container 1 is raised, and then, the working gas is introduced into the heating container 1 through the gas source 2, the temperature difference between the working gas and the silicon single crystal rod 17 is relatively small, and the silicon wafer on the silicon single crystal rod 17 can be prevented from being broken.
In some embodiments of the present utility model, step S3 further includes:
when the air pressure in the heating container 1 exceeds a set air pressure (1 Mpa as an example), the air pressure in the heating container 1 is detected, and the air pressure in the heating container 1 is maintained at the set air pressure by venting and depressurizing the heating container 1.
Thus, the air pressure in the heating container 1 can be ensured to be stable, and the degumming working condition is ensured to be stable.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.
Claims (8)
1. A degumming system for a silicon single crystal rod after cutting, comprising:
the heating degumming module comprises a heating container and a gas heating unit, and the gas heating unit is arranged in the heating container;
the air supply module comprises an air source and an air inlet pipe, the air inlet end of the air inlet pipe is communicated with the air source, and the air outlet end of the air inlet pipe is communicated with the heating container;
and the silicon single crystal rod fixing module is arranged in the heating container and is suitable for fixing a silicon single crystal rod.
2. The degumming system after cutting a silicon single crystal rod according to claim 1, wherein the gas heating unit comprises a plurality of gas heating covers, each gas heating cover is internally provided with a gas heating device, all the gas heating covers are communicated with the gas outlet end of the gas inlet pipe, and the gas heating covers are provided with gas outlet holes.
3. The system according to claim 2, wherein the gas heating unit comprises a first gas heating mantle and a second gas heating mantle, the first gas heating mantle and the second gas heating mantle are respectively disposed on two sides of the silicon single crystal rod fixing module, and the gas outlet hole is disposed on a side of the gas heating mantle facing the silicon single crystal rod fixing module.
4. The degumming system after cutting a silicon single crystal rod according to claim 1, wherein the gas supply module further comprises a gas circulation pipe, a one-way valve is arranged on the gas circulation pipe, the gas inlet end of the gas circulation pipe is communicated with the heating container, and the gas outlet end of the gas circulation pipe is communicated with the gas inlet pipe.
5. The degumming system after cutting a silicon single crystal rod according to claim 4, wherein a gas preheating device is arranged on the gas inlet pipe, and the gas preheating device is arranged at the downstream of the joint of the gas circulation pipe and the gas inlet pipe.
6. The degumming system after cutting a silicon single crystal rod according to claim 1, wherein a temperature sensor and/or an air pressure sensor are provided in the heating container.
7. The system according to any one of claims 1 to 6, wherein the silicon single crystal rod fixing module comprises a bottom plate, two sides of the bottom plate are respectively provided with side fixing brackets, and a fixing groove suitable for fixing the silicon single crystal rod is formed between the two side fixing brackets.
8. The system for degumming a silicon single crystal rod as defined in claim 7, wherein the side fixing support is provided with a wafer pressure sensor adapted to detect a wafer pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321565308.1U CN220092386U (en) | 2023-06-19 | 2023-06-19 | Degumming system for cut silicon single crystal rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321565308.1U CN220092386U (en) | 2023-06-19 | 2023-06-19 | Degumming system for cut silicon single crystal rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220092386U true CN220092386U (en) | 2023-11-28 |
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ID=88867243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321565308.1U Active CN220092386U (en) | 2023-06-19 | 2023-06-19 | Degumming system for cut silicon single crystal rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220092386U (en) |
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2023
- 2023-06-19 CN CN202321565308.1U patent/CN220092386U/en active Active
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