CN111326403A - Wafer pretreatment method and semiconductor device - Google Patents
Wafer pretreatment method and semiconductor device Download PDFInfo
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- CN111326403A CN111326403A CN201911212050.5A CN201911212050A CN111326403A CN 111326403 A CN111326403 A CN 111326403A CN 201911212050 A CN201911212050 A CN 201911212050A CN 111326403 A CN111326403 A CN 111326403A
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- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A wafer pretreatment method comprises the following steps: positioning a wafer cassette carrying wafers to a load port of a semiconductor apparatus; heating clean gas to be higher than normal temperature, and blowing the clean gas to be higher than the normal temperature into the wafer box so as to heat the wafer to be in a preset temperature range; and sequentially transferring the wafer to a buffer chamber and a processing chamber of the semiconductor device. The invention pre-heats the wafer while it is positioned to the load port for cleaning, thereby saving the heating time of the wafer in the processing chamber and improving the throughput of the semiconductor equipment. The invention also provides a semiconductor device.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a wafer pretreatment method and semiconductor equipment.
Background
Semiconductor equipment having at least one process chamber 1 for photoresist removal or cleaning as shown in fig. 1 is common in the art for processing wafers 3. The process chamber 1 includes a rotatable chuck 2, a photoresist stripper nozzle 4, a rinse solution nozzle 5, a chemical liquid nozzle 6, and a drain outlet 7. The chuck 2 is used to position and heat the wafer 3. The photoresist stripper nozzle 4, the rinse solution nozzle 5, and the chemical solution nozzle 6 are disposed toward the chuck 2, respectively. The photoresist remover nozzle 4 is used for supplying photoresist remover; the rinse liquid nozzle 5 is used to supply rinse liquid; the chemical liquid nozzle 6 is used to supply other chemical liquid such as hydrofluoric acid Diluent (DHF). The drain outlet 7 is provided at the bottom of the treatment chamber 1 for discharging waste liquid and/or waste gas. In the process of removing the photoresist using the processing chamber 1, a photoresist remover having a temperature of 50 degrees celsius or higher is used. After the wafer 3 is transferred and positioned on the chuck 2 at room temperature, the chuck 2 in the chamber 1 is first required to heat the wafer 3 to 50 degrees celsius.
An important aspect of wafer processing in semiconductor devices is the number of wafers that pass through the system in a given time, which is referred to as the throughput of the device. It is understood that improving throughput requires improving the processing efficiency of semiconductor devices. In the above-described photoresist removing process, it takes a long time to heat the wafer in the process chamber 1 using the chuck 2, which is disadvantageous to improve the throughput of the semiconductor device.
Disclosure of Invention
Accordingly, the present invention provides a wafer pretreatment method and a semiconductor apparatus that solve the above problems.
A wafer pretreatment method comprises the following steps:
positioning a wafer cassette carrying wafers to a load port of a semiconductor apparatus;
heating clean gas to be higher than normal temperature, and blowing the clean gas to be higher than the normal temperature into the wafer box so as to heat the wafer to be in a preset temperature range; and
and sequentially transferring the wafer to a buffer chamber and a processing chamber of the semiconductor equipment.
The utility model provides a semiconductor equipment for do semiconductor processing to the wafer, semiconductor equipment includes at least one load port, main part, at least one processing chamber, manipulator and surge chamber, the load port the surge chamber respectively with the bulk phase is connected, the load port is used for the location to bear the wafer box of wafer, the load port be equipped with to blow clean gaseous clean mechanism in the wafer box, the processing chamber with the surge chamber is adjacent to be set up, the manipulator be used for the load port buffer chamber reaches transmit in proper order between the processing chamber the wafer, the load port still includes a heating mechanism, a heating mechanism with clean mechanism is connected and is heated clean gaseous to being greater than the normal atmospheric temperature, in order to heat the wafer.
According to the wafer pretreatment method provided by the invention, the wafer is preheated while being positioned to the loading port for cleaning, so that the heating time of the wafer in the processing chamber is saved, and the throughput of the semiconductor equipment is improved.
Drawings
Fig. 1 is a schematic sectional view of a process chamber of a conventional semiconductor apparatus.
FIG. 2 is a flow chart of a wafer pretreatment method of the present invention.
Fig. 3 is a schematic top view of the semiconductor apparatus of the present invention.
Fig. 4 is a schematic cross-sectional view of the load port and the wafer cassette of the semiconductor apparatus shown in fig. 3.
Fig. 5 is a schematic cross-sectional view of one embodiment of a buffer chamber of the semiconductor apparatus shown in fig. 3.
Fig. 6 is a schematic cross-sectional view of another embodiment of a buffer chamber of the semiconductor apparatus shown in fig. 3.
Description of the main elements
Wafers 100,3
Wafer positioning table 252
Wafer cassette 300
Bearing part 330
Device front-end and back-end modules 440
Chuck 2
Photoresist remover nozzle 4
Flushing liquid nozzle 5
Chemical liquid nozzle 6
Drain outlet 7
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element or component is referred to as being "connected" to another element or component, it can be directly connected to the other element or component or intervening elements or components may also be present. When an element or component is referred to as being "disposed on" another element or component, it can be directly on the other element or component or intervening elements or components may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 2 to 3, an embodiment of the invention provides a wafer pretreatment method applied to a semiconductor apparatus 200. The semiconductor apparatus 200 includes a main body 210, at least one load port 220, at least one process chamber 230, a robot 240, and a buffer chamber 250. The load port 220 and the buffer chamber 250 are respectively connected to the main body 210. The load port 220 is used to position a cassette 300 carrying the wafer 100. The load port 220 is provided with a cleaning mechanism for blowing a cleaning gas into the wafer cassette 300. The process chamber 230 is disposed adjacent to the buffer chamber 250. The robot 240 is used to transfer the wafer 100 between the load port 220, the buffer chamber 250, and the process chamber 230 in sequence. The processing chamber 230 is used to perform a photoresist removal process or a cleaning process. The wafer pre-processing method pre-heats the wafer 100 before the wafer 100 is transferred to the processing chamber 230 to save the heating time of the wafer 100 in the processing chamber 230.
Before describing the wafer preprocessing method of the present invention, a typical transmission path of the wafer 100 in the semiconductor apparatus 200 is defined as follows: the wafer 100 is positioned in the pod 300 and is positioned to the load port 220, a cleaning gas is introduced into the pod 300 through the load port 220 to clean the wafer 100, and the wafer is transferred from the load port 220 to the buffer chamber 250 through the body 210 for environmental conversion, and then transferred from the buffer chamber 250 to the processing chamber 230.
The wafer pretreatment method comprises the following steps:
step S1: the wafer cassette 300 carrying the wafer 100 is positioned to the load port 220 of the semiconductor apparatus 200.
Step S2: after heating the cleaning gas to a temperature higher than the normal temperature, the cleaning gas higher than the normal temperature is blown into the wafer cassette 300 to heat the wafer 100 to a predetermined temperature range.
The predetermined temperature range may be determined according to a temperature required for processing the wafer 100 in the processing chamber 230 and a heat loss on the way of the wafer 100 to the processing chamber 230 after being carried away from the load port 220. For example, in one embodiment, the processing chamber 230 is used to remove photoresist, the temperature required for processing is above 50 degrees celsius, preferably 80 to 100 degrees celsius, and the wafer 100 needs to be heated to at least 50 degrees celsius. If the heat lost from the wafer 100 during its transit from the load port 220 to the processing chamber 230 is further considered (assuming a 10 degree cool down time during the transit), the wafer 100 is heated to at least 60 degrees celsius, but is not so limited. In this embodiment, the temperature of the cleaning gas is greater than 40 ℃.
The cleaning gas is a gas that does not react with the wafer 100, such as an inert gas.
This step is actually a combination of heating the wafer 100 and cleaning the wafer 100, thereby reducing the heating time of the wafer 100 in the processing chamber 230 and improving the throughput of the semiconductor device 200.
Step S3: the wafer 100 is transferred to the buffer chamber 250 of the semiconductor apparatus 200.
Step S4: the wafer 100 is heated again in the buffer chamber 250.
In this step, the wafer 100 is heated again as shown in fig. 5 and 6, including but not limited to transferring thermal radiation to the wafer 100 after the wafer 100 is placed on the wafer positioning stage, and heating the wafer 100 by a heating plate after the wafer 100 is placed on the wafer positioning stage.
In some embodiments, this step may be omitted. However, heating the wafer 100 again in this step is a preferred solution because the wafer 100 enters the buffer chamber 250 for environmental change, thereby further saving the time required to heat the wafer 100 in the processing chamber 230.
Step S5: the wafer is transferred to a process chamber 230 of the semiconductor device.
The wafer pre-processing method according to the present invention pre-heats the wafer 100 while the wafer 100 is positioned to the load port 220 for cleaning, thereby saving the heating time of the wafer 100 in the processing chamber 230 and improving the throughput of the semiconductor apparatus 200.
Referring to fig. 3, another embodiment of the invention provides a semiconductor device 200. The semiconductor apparatus 200 includes a main body 210, at least one load port 220, at least one process chamber 230, a robot 240, and a buffer chamber 250. The load port 220 and the buffer chamber 250 are respectively connected to the main body 210. The load port 220 is used to position a cassette 300 carrying the wafer 100. The process chamber 230 is disposed adjacent to the buffer chamber 250. The robot 240 is used to transfer the wafer 100 between the load port 220, the buffer chamber 250, and the process chamber 230 in sequence. In the present embodiment, the processing chamber 230 is used for performing a photoresist removal process or a cleaning process.
Referring to fig. 4, the wafer cassette 300 includes a cassette body 310, an inlet 320, and a plurality of carrying portions 330. A plurality of carrying portions 330 are fixed in the box 310 to carry the wafer 100. The air inlet 320 is provided on the box body 310 for introducing clean air.
The loading port 220 is provided with a first heating mechanism 221 and a cleaning mechanism 222. The cleaning mechanism 222 is connected to the gas inlet 320 and blows a cleaning gas into the wafer cassette 300. The first heating mechanism 221 is connected to the cleaning mechanism 222 and heats the cleaning gas to a temperature higher than normal temperature, so that the wafer 100 is heated to a predetermined temperature range at the load port 220. The predetermined temperature range may be determined according to a temperature required for processing the wafer 100 in the processing chamber 230 and a heat loss on the way of the wafer 100 to the processing chamber 230 after being carried away from the load port 220. Specifically, the processing chamber 230 of an embodiment is used for removing photoresist, and the temperature required for processing is 50 degrees celsius or more, preferably 80 to 100 degrees celsius, so that the wafer 100 needs to be heated to at least 50 degrees celsius. In further consideration of the heat lost from the wafer 100 on its way to the processing chamber 230 after being transported away from the load port 220, the wafer 100 is heated to at least 80 degrees celsius. In another embodiment, the chamber 230 is used to perform a cleaning process at a temperature of 75 to 85 degrees celsius and the wafer is soaked for 100 to twenty minutes in a standard cleaning solution of NH4OH: H2O2: H2O at 1:1:5 to 1:2: 7. The cleaning process is widely applied to cleaning the wafer 100 after various processes, such as etching or chemical mechanical polishing, wherein an etching product or chemical mechanical polishing slurry remains on the surface of the wafer 100, and all contaminants, such as micro dust (Particle), Organic matter (Organic), inorganic matter, Metal-Ions (Metal-Ions), and the like, of the wafer 100 can be removed by soaking. The wafer 100 needs to be heated to at least 80 degrees celsius when the chamber 230 is processing the cleaning process.
In this embodiment, the temperature of the cleaning gas is heated to more than 40 ℃.
The cleaning gas is a gas that does not react with the wafer 100, such as an inert gas.
The buffer chamber 250 is provided with a second heating mechanism 251 and a wafer positioning table 252. In one embodiment, as shown in fig. 4, the second heating mechanism 251 includes a heating lamp 2511. The heating lamp 2511 is disposed opposite to the wafer positioning stage 252, and transfers heat radiation to the wafer 100. In another embodiment, as shown in fig. 5, the second heating mechanism includes a heating plate 2512. The heating plate 2512 is located on the wafer positioning table 252 and is used for heating the wafer 100.
Further, the semiconductor device 200 further includes a control mechanism (not shown). The control mechanism controls the first heating mechanism 221 to heat the cleaning gas and blow the cleaning gas heated to a temperature higher than a normal temperature to the gas inlet 320 of the wafer cassette 300 when the wafer cassette 300 is positioned to the load port 220. The control mechanism controls the second heating mechanism 251 to be turned on when the wafer 100 is transferred to the buffer chamber 250 to reheat the wafer 100.
The semiconductor apparatus 200 of the present invention is provided with the first heating mechanism 221 to pre-heat the wafer 100 positioned at the load port 220 while cleaning the wafer, thereby saving the heating time of the wafer 100 in the processing chamber 230, reducing the time required for processing a single wafer 100 by the semiconductor apparatus 200, and improving the throughput of the semiconductor apparatus 200.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the present invention.
Claims (10)
1. A wafer pretreatment method is characterized by comprising the following steps: positioning a wafer cassette carrying wafers to a load port of a semiconductor apparatus;
heating clean gas to be higher than normal temperature, and blowing the clean gas to be higher than the normal temperature into the wafer box so as to heat the wafer to be in a preset temperature range; and
and sequentially transferring the wafer to a buffer chamber and a processing chamber of the semiconductor equipment.
2. The wafer pretreatment method of claim 1, wherein the temperature of the cleaning gas is greater than 40 ℃.
3. The method of claim 2, wherein the predetermined temperature range is determined based on a temperature required for processing the wafer in the processing chamber and a heat loss of the wafer on the way to the processing chamber after the wafer is transported from the load port.
4. The method of claim 1, wherein the wafer is transferred into the buffer chamber further comprising the step of reheating the wafer.
5. The method of claim 4, wherein the step of reheating the wafer comprises:
and placing the wafer on a wafer positioning table, and transferring thermal radiation to the wafer.
6. The method of claim 4, wherein the step of reheating the wafer comprises:
and placing the wafer on a wafer positioning table, and heating the wafer through a heating plate.
7. The utility model provides a semiconductor equipment for do semiconductor processing to the wafer, semiconductor equipment includes at least one load port, main part, at least one processing chamber, manipulator and surge chamber, the load port the surge chamber respectively with the main part is connected, the load port is used for the location to bear the wafer box of wafer, the load port be equipped with to blow clean gaseous clean mechanism in the wafer box, the processing chamber with the surge chamber is adjacent to be set up, the manipulator be used for the load port the surge chamber reaches transmit in proper order between the processing chamber the wafer, its characterized in that, the load port still includes first heating mechanism, first heating mechanism with clean mechanism is connected and heats clean gaseous to being greater than the normal atmospheric temperature, in order to heat the wafer.
8. The semiconductor apparatus of claim 7, wherein a second heating mechanism and a wafer positioning stage are disposed within the buffer chamber.
9. The semiconductor apparatus of claim 8, wherein the second heating mechanism comprises a heat lamp or a heat plate, the heat lamp being disposed opposite the wafer positioning stage, the heat plate being located on the wafer positioning stage.
10. The semiconductor apparatus of claim 8, further comprising a control mechanism that controls the first heating mechanism to heat the cleaning gas and blow the cleaning gas heated to a temperature greater than normal toward the pod when the pod is positioned at the load port, the control mechanism controlling the second heating mechanism to be turned on to reheat the wafer when the wafer is transferred to the buffer chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862778914P | 2018-12-13 | 2018-12-13 | |
| US62/778914 | 2018-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111326403A true CN111326403A (en) | 2020-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911212050.5A Pending CN111326403A (en) | 2018-12-13 | 2019-12-02 | Wafer pretreatment method and semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114623862A (en) * | 2020-12-11 | 2022-06-14 | 中国科学院微电子研究所 | Semiconductor measuring equipment and cleaning method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07166353A (en) * | 1994-11-28 | 1995-06-27 | Hitachi Ltd | Continuous sputtering method |
| US6578589B1 (en) * | 1999-03-31 | 2003-06-17 | Super Silicon Crystal Research Institute Corp. | Apparatus for manufacturing semiconductor wafer |
| US20030113188A1 (en) * | 2001-12-17 | 2003-06-19 | Applied Materials, Inc. | Mechanism for providing a continuous supply of wafers and cassettes to semiconductor fabrication tool |
| CN104903992A (en) * | 2013-01-08 | 2015-09-09 | 系统科技公司 | Method for continuous processing of semiconductor wafer |
| US20180211833A1 (en) * | 2017-01-24 | 2018-07-26 | Applied Materials, Inc. | Method And Apparatus For Selective Deposition Of Dielectric Films |
-
2019
- 2019-12-02 CN CN201911212050.5A patent/CN111326403A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07166353A (en) * | 1994-11-28 | 1995-06-27 | Hitachi Ltd | Continuous sputtering method |
| US6578589B1 (en) * | 1999-03-31 | 2003-06-17 | Super Silicon Crystal Research Institute Corp. | Apparatus for manufacturing semiconductor wafer |
| US20030113188A1 (en) * | 2001-12-17 | 2003-06-19 | Applied Materials, Inc. | Mechanism for providing a continuous supply of wafers and cassettes to semiconductor fabrication tool |
| CN104903992A (en) * | 2013-01-08 | 2015-09-09 | 系统科技公司 | Method for continuous processing of semiconductor wafer |
| US20180211833A1 (en) * | 2017-01-24 | 2018-07-26 | Applied Materials, Inc. | Method And Apparatus For Selective Deposition Of Dielectric Films |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114623862A (en) * | 2020-12-11 | 2022-06-14 | 中国科学院微电子研究所 | Semiconductor measuring equipment and cleaning method |
| CN114623862B (en) * | 2020-12-11 | 2024-04-16 | 中国科学院微电子研究所 | Semiconductor measuring equipment and cleaning method |
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Application publication date: 20200623 |