CN219907824U

CN219907824U - Evaporation equipment

Info

Publication number: CN219907824U
Application number: CN202320953859.9U
Authority: CN
Inventors: 邱开富; 牛闯; 吴涛; 王宏涛; 宗贝贝; 王皓正; 王永谦; 贺良琴; 陈刚
Original assignee: Zhejiang Aiko Solar Energy Technology Co Ltd; Guangdong Aiko Technology Co Ltd; Tianjin Aiko Solar Energy Technology Co Ltd; Zhuhai Fushan Aixu Solar Energy Technology Co Ltd
Current assignee: Zhejiang Aiko Solar Energy Technology Co Ltd; Guangdong Aiko Technology Co Ltd; Tianjin Aiko Solar Energy Technology Co Ltd; Zhuhai Fushan Aixu Solar Energy Technology Co Ltd
Priority date: 2023-04-21
Filing date: 2023-04-21
Publication date: 2023-10-27
Anticipated expiration: 2033-04-21

Abstract

The utility model is suitable for the technical field of solar cells and provides evaporation equipment. The evaporation device is arranged in the evaporation cavity and used for evaporating the perovskite precursor layer on the substrate; the evaporation device comprises a base, a crucible and a heating source, wherein the base is used for fixing a substrate, the crucible is used for accommodating the evaporation source of the perovskite precursor layer, and the heating source is used for evaporating the evaporation source; the heating device is arranged in the evaporation cavity and used for heating the substrate, and crystallizing the perovskite precursor layer to form a perovskite layer. Therefore, the vapor deposition device and the heating device are arranged in the vapor deposition cavity, so that the perovskite precursor layer can be quickly dried and induced to crystallize in the vapor deposition process or after vapor deposition, the time of exposing the perovskite precursor layer in the atmosphere in the process and the process can be greatly reduced, the erosion of water vapor is reduced, the stability of the perovskite layer is improved, and meanwhile, the productivity can be improved.

Description

Evaporation equipment

Technical Field

The utility model belongs to the technical field of solar cells, and particularly relates to evaporation equipment.

Background

Solar cell power generation is a sustainable clean energy source that uses the photovoltaic effect of semiconductor p-n junctions to convert sunlight into electrical energy.

In the related art, a perovskite layer is often used as a light absorption layer of a solar cell, a perovskite wet film is generally deposited on a substrate by adopting evaporation equipment, and then crystallization and drying are carried out on the perovskite wet film in a single mode such as annealing. However, this is time consuming, and the perovskite layer is exposed to the atmosphere and eroded by water vapor for a long period of time, resulting in poor stability of the perovskite layer and low production efficiency.

Based on this, how to manufacture the perovskite layer more efficiently becomes a problem to be solved urgently.

Disclosure of Invention

The utility model provides evaporation equipment, which aims to solve the problem of how to manufacture a perovskite layer more efficiently.

In a first aspect, the present utility model provides an evaporation apparatus, including:

an evaporation cavity;

the evaporation device is arranged in the evaporation cavity and used for evaporating the perovskite precursor layer on the substrate; the evaporation device comprises a base, a crucible and a heating source, wherein the base is used for fixing the substrate, the crucible is used for accommodating the evaporation source of the perovskite precursor layer, and the heating source is used for evaporating the evaporation source;

and the heating device is arranged in the evaporation cavity and used for heating the substrate, and crystallizing the perovskite precursor layer to form a perovskite layer.

Optionally, the heating device is disposed on a side of the susceptor facing the crucible, and heats the substrate by contact.

Optionally, a space is formed between the heating device and the susceptor, and the substrate is heated by radiation.

Optionally, the heating means comprises heating wires and/or heating plates.

Optionally, the heating device comprises an infrared heater.

Optionally, the distance between the infrared heater and the base is 1.5cm to 4.5cm.

Optionally, the evaporation device comprises a laser arranged in the evaporation cavity, and the laser is used for scanning the perovskite precursor layer and performing crystallization treatment on the perovskite precursor layer.

Optionally, the laser comprises a point scanning laser and/or a line scanning laser.

Optionally, the evaporation device comprises a plasma generator arranged in the evaporation cavity, and the plasma generator is used for generating plasma and crystallizing the perovskite precursor layer.

Optionally, the plasma generator includes a power source, a first electrode and a second electrode, the power source is electrically connected with the first electrode and the second electrode, the first electrode and the second electrode are respectively located at two sides of the base, a plasma reaction area is formed between the first electrode and the second electrode, and the plasma reaction area at least partially covers the base.

According to the evaporation equipment provided by the embodiment of the utility model, the evaporation device and the heating device are arranged in the evaporation cavity, so that the perovskite precursor layer can be quickly dried and induced to crystallize in the evaporation process or after evaporation, the process and the exposure time of the perovskite precursor layer in the atmosphere can be greatly reduced, the erosion of water vapor is reduced, the stability of the perovskite layer is improved, and the productivity is improved.

Drawings

Fig. 1 is a schematic structural view of an evaporation apparatus according to an embodiment of the present utility model;

fig. 2 is a schematic structural view of an evaporation apparatus according to an embodiment of the present utility model;

fig. 3 is a schematic structural view of an evaporation apparatus according to an embodiment of the present utility model;

fig. 4 is a schematic structural view of an evaporation apparatus according to an embodiment of the present utility model;

description of main reference numerals:

the vapor deposition apparatus 100, the vapor deposition chamber 101, the susceptor 11, the crucible 12, the heating source 13, the heating device 20, the infrared heater 21, the laser 30, the plasma generator 40, the first electrode 41, the second electrode 42, and the holder 43.

Detailed Description

The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. Examples of the embodiments are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements throughout or elements having like or similar functionality. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the utility model. Furthermore, it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the present utility model.

In the description of the present utility model, it should be understood that the terms "length," "width," "upper," "lower," "left," "right," "horizontal," "top," "bottom," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present utility model, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

The following disclosure provides many different embodiments, or examples, for implementing different structures of the utility model. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the utility model. Furthermore, the present utility model may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present utility model provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize applications of other processes and/or usage scenarios for other materials.

In the utility model, the vapor deposition device and the heating device are arranged in the vapor deposition cavity, so that the perovskite precursor layer can be quickly dried and induced to crystallize in the vapor deposition process or after vapor deposition, thereby greatly reducing the process and the exposure time of the perovskite precursor layer in the atmosphere, reducing the erosion of water vapor, improving the stability of the perovskite layer and simultaneously improving the productivity.

Example 1

Referring to fig. 1, an evaporation apparatus 100 according to an embodiment of the present utility model includes an evaporation chamber 101, an evaporation device and a heating device 20, where the evaporation device is disposed in the evaporation chamber 101 and is used for evaporating a perovskite precursor layer on a substrate 200; the evaporation device comprises a base 11, a crucible 12 and a heating source 13, wherein the base 11 is used for fixing a substrate 200, the crucible 12 is used for accommodating an evaporation source of a perovskite precursor layer, and the heating source 13 is used for evaporating the evaporation source; the heating device 20 is disposed in the evaporation cavity 101, and is used for heating the substrate 200, and crystallizing the perovskite precursor layer to form a perovskite layer.

According to the vapor deposition equipment 100 provided by the embodiment of the utility model, the vapor deposition device and the heating device 20 are arranged in the vapor deposition cavity 101, so that the perovskite precursor layer can be quickly dried and induced to crystallize in the vapor deposition process or after vapor deposition, the process and the exposure time of the perovskite precursor layer in the atmosphere can be greatly reduced, the erosion of water vapor is reduced, the stability of the perovskite layer is improved, and the productivity is improved.

It can be appreciated that heating the substrate 200 may enable the perovskite precursor layer to be deposited and adsorbed on the substrate 200 to obtain energy, increase the kinetic energy of atoms in the perovskite precursor layer, and increase the migration capacity thereof, thereby improving the crystallization quality, increasing the grain size of the perovskite thin film, reducing the grain boundary, reducing the defect density, and improving the performance of the perovskite battery.

Specifically, the base 11 may be disposed at the top of the evaporation chamber 101, the crucible 12 may be disposed at the bottom of the evaporation chamber 101, and the base 11 and the crucible 12 are disposed in correspondence with each other in the vertical direction of the evaporation chamber 101. In this way, the material evaporated from the crucible 12 is allowed to adhere to the substrate 200 fixed by the susceptor 11. Further, the center of the susceptor 11 is aligned with the center of the crucible 12 in the vertical direction of the evaporation chamber 101. In this way, it is ensured that the material evaporated from the crucible 12 adheres as much as possible to the substrate 200 fixed by the susceptor 11, reducing the probability of being deviated to the rest position.

Specifically, the susceptor 11 may be formed with vacuum adsorption holes, and the substrate 200 may be fixed on the susceptor 11 by vacuum adsorption. In this manner, damage to the substrate 200 may be reduced.

In the present embodiment, one substrate 200 is fixed to one susceptor 11, one crucible 12 is fixed to one substrate 200, and vapor deposition is performed. It will be appreciated that in other embodiments, the number of bases 11 may be one, and a plurality of bases 200 may be fixed; in other embodiments, the number of the bases 11 may be plural, and plural substrates 200 may be fixed; in other embodiments, the number of crucibles 12 may be plural. The number and correspondence relationship of the susceptor 11 and the crucible 12 are not limited here.

Specifically, the crucible 12 may have an arcuate bottom concave shape. Thus, the vapor deposition sources placed therein are easily collected, and the heating source 13 is also easily heated. It will be appreciated that in other embodiments, the crucible 12 may be flat bottom concave.

Specifically, the crucible 12 may also include a baffle. Thus, the opening of the crucible 12 can be shielded by the shutter when not in use, and dirt is prevented from entering.

Specifically, the heating source 13 may include an electron beam heater, and the vapor deposition source in the crucible 12 is bombarded by an electron beam emitted from the electron beam heater to evaporate the vapor deposition source. The heating source 13 may also include a resistive heater, an inductive heater, or the like. The specific form of the heating source 13 is not limited herein.

Specifically, the heating device 20 may be disposed on an inner wall of the evaporation chamber 101, may be disposed on the base 11, and may be suspended in the evaporation chamber 101 by a bracket. The specific arrangement position of the heating device 20 is not limited here.

Specifically, the number of the heating devices 20 may be one or more, and the kind may be one or more.

Specifically, the evaporation apparatus 100 may further include a temperature measuring instrument for measuring the temperature of the substrate 200. The processor controls the heating device 20 according to the measured temperature of the substrate 200 such that the temperature of the substrate 200 is within a preset temperature range.

Further, the preset temperature range is 100-180 ℃. For example, 100 ℃, 110 ℃, 150 ℃, 170 ℃, 180 ℃. In this manner, the substrate 200 is heated to a temperature in a suitable range for better crystallization of the perovskite precursor layer.

Example two

Referring to fig. 1, in some alternative embodiments, a heating device 20 is provided on a side of the susceptor 11 facing the crucible 12 to heat the substrate 200 by contact.

In this manner, the heating device 20 may directly heat-transfer with the substrate 200, and may rapidly heat the substrate 200.

Specifically, the susceptor 11 may be formed with vacuum adsorption holes through which the susceptor 11 fixes the substrate 200, and the heating device 20 is prevented from escaping from the vacuum adsorption holes. In this way, the heating device 20 is prevented from interfering with the vacuum suction holes.

Example III

Referring to fig. 2, in some alternative embodiments, a space is formed between the heating device 20 and the susceptor 11, and the substrate 200 is heated by radiation.

In this manner, the heating device 20 does not directly contact the substrate 200, but radiation-heats, and damage to the substrate 200 caused by direct contact can be reduced.

Specifically, the heating device 20 includes an infrared heater 21 in the drawing.

Specifically, the distance between the heating device 20 and the susceptor 11 may be fixed, or the position of the heating device 20 may be adjusted by a moving mechanism, thereby adjusting the distance between the heating device 20 and the susceptor 11. In this way, the heating of the substrate 200 by the heating device 20 is made more flexible.

Further, the moving mechanism is, for example, a telescopic rod, a rocker arm, or the like. The specific form of the moving mechanism is not limited herein.

Example IV

Referring to fig. 1 and 2, in some alternative embodiments, the heating device 20 includes heating wires and/or plates.

Thus, the heating device 20 is easy to obtain and low in cost, and is beneficial to reducing the cost of coating equipment.

For example, the heating device 20 includes heating wires and electric heating plates; as another example, the heating device 20 includes heating wires, excluding electric heating plates; for another example, the heating device 20 does not include heating wires, including electric heating plates. The specific form of the heating device 20 is not limited herein.

Specifically, the heating wire can be wound around the periphery of the vacuum adsorption hole, so that the vacuum adsorption hole is avoided.

Specifically, the electric heating plate may be formed with a through hole corresponding to the vacuum adsorption hole, thereby avoiding the vacuum adsorption hole.

Example five

Referring to fig. 2, in some alternative embodiments, the heating device 20 includes an infrared heater 21.

Thus, the substrate 200 can be heated by infrared rays, the heat penetrating power is strong, and the heating effect is better.

Specifically, the infrared heater 21 may be disposed on the inner wall of the vapor deposition chamber 101, and the power line of the infrared heater 21 may be led out from the through hole of the inner wall of the vapor deposition chamber 101. Thus, the circuit can be prevented from being exposed in the evaporation cavity 101, the circuit in the evaporation cavity 101 is reduced, the power line is prevented from being interfered to evaporation and heating, and adverse effects of evaporation and heating on the power line can be avoided.

Specifically, the infrared heater 21 may be provided on the outer wall of the heating source 13, and the power line of the infrared heater 21 may be led out together with the power line of the heating source 13. In this way, routing, installation and maintenance of the infrared heater 21 is facilitated.

Specifically, the infrared heater 21 has a power of 12W to 18W. For example, 12W, 15W, 17W, 18W.

In this way, the infrared power of the infrared heater 21 is in a suitable range, and imbalance of the precursor layer and the halogen organic substance caused by too low or too high infrared power can be avoided, thereby avoiding poor performance of the perovskite precursor layer.

Further, the power of the infrared heater 21 is 13W to 16W. For example, 13W, 13.5W, 14.2W, 15.5W, 16W. Thus, the precursor layer and the halogen organic matter are more balanced, and the perovskite precursor layer has better performance.

Example six

Referring to FIG. 2, in some alternative embodiments, the distance between the infrared heater 21 and the base 11 is 1.5cm to 4.5cm. For example, 1.5cm, 2cm, 2.5cm, 3cm, 3.5cm, 4cm, 4.5cm.

In this way, the infrared heater 21 is located at a suitable distance from the perovskite precursor layer, and thus, poor crystallization effect due to too large or too small distance can be avoided, which is advantageous in ensuring crystallization effect.

Specifically, the distance between the infrared heater 21 and the susceptor 11 means a line connecting the center of the infrared heater 21 and the center of the surface of the susceptor 11 to which the substrate 200 is fixed.

Example seven

Referring to fig. 3, in some alternative embodiments, the vapor deposition apparatus 100 includes a laser 30 disposed in the vapor deposition chamber 101, where the laser 30 is configured to scan the perovskite precursor layer and perform a crystallization process on the perovskite precursor layer.

In this way, crystallization of the perovskite precursor layer may be induced using a laser.

Specifically, the laser 30 includes one or more of a picosecond laser, a femtosecond laser, and a nanosecond laser.

Thus, the laser has very short action time, and the efficiency can be improved while the crystallization effect of the perovskite precursor layer is ensured.

Specifically, the power of the laser 30 is 1W-2W. For example, 1W, 1.2W, 1.5W, 1.7W, 2W. In this way, the power of the laser 30 is in a suitable range, and the perovskite precursor layer is crystallized with good effect.

Further, the power of the laser 30 is 1.7W-2W. For example, 1.7W, 1.8W, 1.9W, 2W. In this way, the power of the laser 30 is in a more appropriate range, and the perovskite precursor layer is crystallized more effectively.

Specifically, the scanning speed of the laser 30 is 0.2mm/s to 200mm/s. For example 0.2mm/s, 0.5mm/s, 1mm/s, 50mm/s, 120mm/s, 180mm/s, 200mm/s.

In this way, the scanning speed of the laser 30 is in a proper range, and the perovskite precursor layer is crystallized with good effect.

Further, the scanning speed of the laser 30 is 10mm/s to 50mm/s. For example 10mm/s, 17mm/s, 20mm/s, 45mm/s, 50mm/s. In this way, the scanning speed of the laser 30 is in a more appropriate range, and the perovskite precursor layer is crystallized more effectively.

Example eight

In some alternative embodiments, laser 30 comprises a point scanning laser.

In this manner, the laser 30 may perform a spot scan of the perovskite precursor layer. Thus, the perovskite precursor layer can be precisely induced to crystallize in units of dots. Specifically, the crystals are in the form of granules.

In some alternative embodiments, laser 30 comprises a line scanning laser.

As such, the laser 30 may line scan the perovskite precursor layer. In this way, the perovskite precursor layer can be precisely induced to crystallize in units of lines. Specifically, the crystals are in the form of a bar.

Example nine

Referring to fig. 4, in some alternative embodiments, the vapor deposition apparatus 100 includes a plasma generator 40 disposed in the vapor deposition chamber 101, where the plasma generator 40 is configured to generate plasma for crystallizing the perovskite precursor layer.

In this manner, plasma may be utilized to promote crystallization of the perovskite precursor layer.

Specifically, the plasma generator 40 may be provided on the inner wall of the vapor deposition chamber 101, on the susceptor 11, or on the heating source 13. The specific location of the plasma generator 40 is not limited herein.

Examples ten

Referring to fig. 4, in some alternative embodiments, the plasma generator 40 includes a power source, a first electrode 41 and a second electrode 42, the power source is electrically connected to the first electrode 41 and the second electrode 42, the first electrode 41 and the second electrode 42 are respectively located at two sides of the base 11, and a plasma reaction area is formed between the first electrode 41 and the second electrode 42, and at least partially covers the base 11.

In this manner, the plasma reaction zone at least partially covers the substrate 200 when the substrate 200 is fixed to the susceptor 11, so that the perovskite precursor layer on the substrate 200 can be promoted to crystallize by using the plasma of the plasma reaction zone.

Specifically, the plasma generator 40 may further include a support 43 disposed on an inner wall of the evaporation cavity 101, the second electrode 42 is disposed on the support 43, the support 43 is capable of moving between a first position and a second position, the second electrode 42 is opposite to the susceptor 11 when the support 43 is disposed at the first position, and is disposed between the susceptor 11 and the crucible 12, and the crucible 12 is opposite to the susceptor 11 when the support 43 is disposed at the second position.

In this way, the bracket 43 can be set at the second position during vapor deposition, so that the second electrode 42 and the bracket 43 are prevented from shielding vapor deposition, and the bracket 43 is set at the first position after vapor deposition, so that plasma is generated between the second electrode 42 and the first electrode 41, and crystallization is promoted.

Further, the plasma generator 40 may further comprise a driving member for driving the support 43 between the first position and the second position. The driving member is, for example, a motor, a cylinder, or the like.

Specifically, the first electrode 41 may be routed within the base 11 to connect with a power source, and the second electrode 42 may be routed within the bracket 43 to connect with a power source. Thus, the circuit can be prevented from being exposed in the evaporation cavity 101, the circuit in the evaporation cavity 101 is reduced, the power line is prevented from being interfered to evaporation and heating, and adverse effects of evaporation and heating on the power line can be avoided.

In particular, the plasma generator 40 may also include a venting device. The venting means may vent one or more of oxygen, water vapor, air, carbon dioxide, nitrogen, helium, neon, argon, krypton, xenon, and radon into the evaporation chamber 101.

Specifically, the power of the plasma generator 40 is 120W-180W. For example 120W, 125W, 130W, 150W, 170W, 180W. In this manner, the power of the plasma generator 40 is in a suitable range, and the perovskite precursor layer is crystallized more effectively.

In the description of the present specification, reference to the terms "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiments or examples is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Furthermore, the foregoing description of the preferred embodiment of the utility model is provided for the purpose of illustration only, and is not intended to limit the utility model to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the utility model.

Claims

1. An evaporation apparatus, comprising:

an evaporation cavity;

2. The vapor deposition apparatus according to claim 1, wherein the heating device is provided on a side of the susceptor facing the crucible, and heats the substrate by contact.

3. The vapor deposition apparatus according to claim 1, wherein a space is formed between the heating device and the susceptor, and the substrate is heated by radiation.

4. A vapor deposition apparatus as claimed in claim 2 or 3, characterized in that the heating means comprises heating wires and/or electric heating plates.

5. The vapor deposition apparatus according to claim 3, wherein the heating device comprises an infrared heater.

6. The vapor deposition apparatus according to claim 5, wherein a distance between the infrared heater and the susceptor is 1.5cm to 4.5cm.

7. The vapor deposition apparatus according to claim 1, characterized in that the vapor deposition apparatus comprises a laser provided in the vapor deposition chamber, the laser being configured to scan the perovskite precursor layer and perform crystallization treatment on the perovskite precursor layer.

8. The evaporation apparatus according to claim 7, wherein the laser comprises a point scanning laser and/or a line scanning laser.

9. The vapor deposition apparatus according to claim 1, characterized in that the vapor deposition apparatus comprises a plasma generator provided in the vapor deposition chamber, the plasma generator being configured to generate plasma for crystallizing the perovskite precursor layer.

10. The vapor deposition apparatus according to claim 9, wherein the plasma generator comprises a power supply, a first electrode, and a second electrode, the power supply electrically connecting the first electrode and the second electrode, the first electrode and the second electrode being located on both sides of the susceptor, respectively, a plasma reaction region being formed between the first electrode and the second electrode, the plasma reaction region at least partially covering the susceptor.