KR20120022197A - Apparatus and method for manufacturing of thin film type solar cell - Google Patents

Abstract

PURPOSE: A method and apparatus for manufacturing a thin film solar cell are provided to improve productivity by forming a cell separating unit and a light transmitting unit with a wet etching process. CONSTITUTION: A first electrode forming unit forms a first electrode on a substrate. An electrode separating unit(220) forms a first separation unit by removing a preset area of the first electrode. A photoelectric conversion layer forming unit(230) forms a photoelectric conversion layer on the substrate including the first electrode and the first separating unit. A contact line forming unit forms a contact line by removing a preset area of the photoelectric conversion layer formed on the first electrode. A printing unit forms a second electrode by printing an electrode pattern on the photoelectric conversion layer. A wet etching unit(270) exposes the first electrode in the second separating unit by removing the photoelectric conversion layer exposed by the second separating unit.

Description

Manufacturing apparatus and manufacturing method of thin film solar cell {APPARATUS AND METHOD FOR MANUFACTURING OF THIN FILM TYPE SOLAR CELL}

The present invention relates to a thin-film solar cell (Solar Cell), and more particularly to a manufacturing apparatus and a manufacturing method of a thin-film solar cell to improve the productivity.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

Briefly describing the structure and principle of the solar cell, the solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (Negative) type semiconductor are bonded to each other. Holes and electrons are generated in the semiconductor by the energy of the incident solar light.In this case, holes (+) move toward the P-type semiconductor and electrons (-) by the electric field generated in the PN junction. Is a principle that can move to the N-type semiconductor to generate power by generating a potential.

Such a solar cell can be classified into a substrate type solar cell and a thin film solar cell.

The substrate type solar cell is a solar cell manufactured using a semiconductor material such as silicon as a substrate, and the thin film type solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass.

Although the substrate type solar cell has a slightly higher efficiency than the thin film type solar cell, there is a limitation in minimizing the thickness in the process and the manufacturing cost increases due to the use of expensive semiconductor substrates. It is hard and is hard to use as glass substitute of building.

Although thin-film solar cells are somewhat less efficient than substrate-type solar cells, they can be manufactured in thin thicknesses and can be manufactured at low cost, which makes them suitable for mass production. It is relatively easy to use as a substitute for building windows.

1A to 1F are cross-sectional views illustrating a method of manufacturing a general thin film solar cell in steps.

Referring to FIGS. 1A to 1F, a method of manufacturing a general thin film solar cell is described as follows.

First, as shown in FIG. 1A, after forming the first electrode 20 on the front surface of the substrate 10, the first electrode 20 is exposed to expose a predetermined region of the substrate 10 through a laser scribing process. ) Is removed at predetermined intervals to form the electrode separator 30.

Next, as shown in FIG. 1B, the photoelectric conversion layer 40 is formed on the entire surface of the substrate 10 on which the first electrode 20 is formed.

Next, as illustrated in FIG. 1C, the transparent conductive layer 50 is formed on the photoelectric conversion layer 40.

Next, as shown in FIG. 1D, the photoelectric conversion layer 40 and the transparent conductive layer 50 are simultaneously removed so that a predetermined region of the first electrode 20 is exposed through a laser scribing process. ).

Next, as shown in FIG. 1E, the second electrode 70 is formed on the contact line 60 and the transparent conductive layer 50. At this time, the second electrode 70 is electrically connected to the first electrode 20 through the contact line 60.

Next, as shown in FIG. 1F, the second electrode 70, the photoelectric conversion layer 40, and the predetermined region of the first electrode 20 adjacent to the contact line 60 are exposed through a laser scribing process. At the same time, the transparent conductive layer 50 is removed to form a cell separator 80.

In the manufacturing method of such a general thin film solar cell has the following problems.

First, the cell separator 80 is formed by simultaneously removing the second electrode 70, the transparent conductive layer 50, and the photoelectric conversion layer 40 through a laser scribing process using a laser irradiation device. The larger the size (10), the longer the laser scribing process takes, and there is a problem in that the cost increases when a plurality of laser irradiation apparatuses are used to shorten the laser scribing process time.

Second, since the visibility of the glass window of the building must be guaranteed, in order to use the thin-film solar cell as a substitute for the glass window of the building, a certain amount of light transmitting area must be secured. However, since the light transmitting area is limited to the cell separation unit 80, which is an area between the second electrodes 70, the visibility is not guaranteed, so that the laser scribing process is performed when the light transmitting area is formed to ensure the visibility. Since there is a problem in that the productivity is lowered several times, the molten conductive material is left by multiple high-energy lasers, or the microstructure of the photoelectric conversion layer 40 is deteriorated to increase leakage current, thereby increasing the efficiency of the solar cell. There is a problem of falling.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a manufacturing apparatus and a manufacturing method of a thin-film solar cell capable of improving productivity.

Another object of the present invention is to provide an apparatus and a method for manufacturing a thin film solar cell, which can improve the mass productivity of a thin film solar cell capable of securing sufficient visibility for application as a glass window.

An apparatus for manufacturing a thin film solar cell according to the present invention for achieving the above technical problem is a first electrode forming unit for forming a first electrode on the front surface of the substrate; An electrode separator to form a first separator by removing a predetermined region of the first electrode; A photoelectric conversion layer forming unit forming a photoelectric conversion layer on an entire surface of the substrate including the first electrode and the first separation unit; A contact line forming unit forming a contact line by removing a predetermined region of the photoelectric conversion layer formed on the first electrode; A printing part connected to the first electrode through the contact line and printed on the photoelectric conversion layer by printing an electrode pattern spaced at a predetermined interval with a second separation part interposed therebetween to form a second electrode; A firing unit for solidifying the second electrode using hot air circulated; And a wet etching unit exposing the first electrode in the second separation unit by removing the photoelectric conversion layer exposed by the second separation unit through a wet etching process.

The second separator may include a cell separation pattern that separates the electrode pattern at predetermined intervals; And a light transmission pattern formed by removing the electrode pattern into a predetermined pattern.

The printing unit may form the electrode pattern by printing an electrode material made of a paste including at least one of silver (Ag), aluminum (Al), and copper (Cu) on the photoelectric conversion layer.

The apparatus for manufacturing a thin film solar cell further includes a transparent conductive layer forming unit for forming a transparent conductive layer on the photoelectric conversion layer, wherein the contact line forming unit combines the transparent conductive layer and a predetermined region of the photoelectric conversion layer together. And forming the contact line, wherein the wet etching unit removes the transparent conductive layer and the photoelectric conversion layer in the second separation unit to expose the first electrode.

In the apparatus for manufacturing a thin film solar cell, the substrate is dried to a predetermined temperature by using hot air circulated while transferring the substrate on which the wet etching process is completed by the wet etching unit to a conveyor, and the dried substrate is heated to a temperature of 30 ° C. or lower. It is characterized in that it further comprises a drying unit for cooling.

According to an aspect of the present invention, there is provided an apparatus for manufacturing a thin film solar cell, including: a printing unit configured to form electrode patterns spaced at predetermined intervals on a substrate by printing an electrode material on the substrate; And a firing unit for solidifying the electrode pattern formed on the substrate using hot air circulated while transferring the substrate on which the electrode pattern is formed.

The baking unit conveys a substrate on which the electrode pattern is formed; And a circulating hot air firing furnace for firing the electrode pattern formed on the substrate conveyed by the conveyor using the circulated hot air.

The circulating hot air firing furnace is a heating unit for raising the substrate to a first temperature; A temperature holding unit for maintaining a first temperature of the substrate heated by the temperature increasing unit; And a slow cooling unit configured to slowly cool the first temperature of the substrate to a second temperature.

Each of the temperature increasing part, the temperature maintaining part, and the slow cooling part includes a chamber installed to cover the conveyor; An air supply blower installed in the chamber to supply gas into the chamber; A gas circulation fan installed at an upper side of the chamber to circulate the gas supplied by the air supply blower in the chamber; A guide plate installed on the conveyor to guide circulation of the gas; Heating means for heating the gas circulated by the gas circulation fan under the control of a temperature regulating device to generate hot air at a constant temperature; And an exhaust fan installed at a bottom surface of the chamber to exhaust a portion of the circulating hot air.

Each of the temperature increasing part, the temperature maintaining part, and the slow cooling part includes a chamber installed to cover the conveyor; An air supply blower installed on the chamber wall to supply gas into the chamber and to circulate the gas in the chamber; A guide plate installed on the conveyor to guide circulation of the gas; Heating means for heating a gas circulated by the air supply blower to generate hot air at a constant temperature according to a control of a temperature regulating device; And an exhaust fan installed at a bottom surface of the chamber to exhaust a portion of the circulating hot air.

The firing unit is characterized in that it further comprises a cooling unit for cooling the temperature of the substrate discharged from the circulating hot air firing furnace according to the drive of the conveyor below 30 ℃.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, including: forming a first electrode on a front surface of a substrate; Removing a predetermined region of the first electrode to form a first separator; Forming a photoelectric conversion layer on the entire surface of the substrate including the first electrode and the first separator; Forming a contact line by removing a predetermined region of the photoelectric conversion layer formed on the first electrode; Forming a second electrode on the photoelectric conversion layer by printing an electrode pattern connected to the first electrode through the contact line and spaced at a predetermined interval with a second separation part interposed therebetween; Solidifying the electrode pattern using hot air circulated; And removing the photoelectric conversion layer in the second separation part through a wet etching process to expose the first electrode in the second separation part.

The second separator may include a cell separation pattern that separates the electrode pattern at predetermined intervals; And a light transmission pattern formed by removing the electrode pattern into a predetermined pattern.

The method of manufacturing the thin film solar cell further includes a step of forming a transparent conductive layer on the photoelectric conversion layer, and removing the predetermined region of the transparent conductive layer and the photoelectric conversion layer together when forming the contact line, In the wet etching process, the transparent conductive layer and the photoelectric conversion layer in the second separation part may be removed together.

The manufacturing method of the thin film solar cell further includes the step of drying the substrate to a predetermined temperature by using hot air circulated while transferring the substrate on which the wet etching process is completed to a conveyor, and cooling the dried substrate to a temperature of 30 ° C. or lower. It is characterized by comprising.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, the method including: printing an electrode material on a substrate to form electrode patterns spaced at predetermined intervals on the substrate; And a step of solidifying the electrode pattern formed on the substrate by using hot air circulated while transferring the substrate on which the electrode pattern is formed.

The solid solution treatment process may include transferring a substrate on which the electrode pattern is formed according to driving of a conveyor; And firing the electrode pattern formed on the substrate transferred by the conveyor using hot air circulated.

The firing of the electrode pattern may include a first step of heating the substrate to a first temperature; A second step of maintaining a first temperature of the elevated substrate; And a third step of slowly cooling the first temperature of the substrate to a second temperature.

Each of the first to third steps may include supplying gas into a chamber provided to cover the conveyor and circulating the gas in the chamber; Maintaining a constant temperature inside the chamber under the control of a temperature control device, and heating the circulated gas through a heating means to generate hot air at a constant temperature; And exhausting a part of the circulating hot air.

The solid solution treatment process may further include cooling the substrate at a temperature of 30 ° C. or lower at the same time as transferring the substrate on which the electrode pattern is fired through the conveyor.

As described above, in the apparatus and method for manufacturing the thin film solar cell according to the present invention, after forming the second electrode by using a printing method, the second electrode is solidified by hot air circulating by using a circulating hot air kiln. By forming a cell separator that separates the photoelectric conversion unit through a wet etching process using the second electrode as a mask, or forming a light transmitting unit in the cell separator and the second electrode, the following effects are obtained.

First, the second electrode / cell separation or the second electrode / cell separation unit / light transmission unit by forming the second electrode / cell separation or the second electrode / cell separation unit / light transmitting unit through the printing process, the firing process, and the wet etching process. Productivity can be improved by shortening the process time of the process.

Second, instead of the conventional laser scribing process, by forming a cell separation part and a light transmission part through a wet etching process, it is possible to obtain sufficient visibility to be applied as a substitute for a glass window, improve mass productivity and reduce costs. Can be.

1A to 1F are cross-sectional views illustrating a method of manufacturing a general thin film solar cell in steps.
2A to 2G are cross-sectional views for explaining step-by-step a method of manufacturing a thin film solar cell according to a first embodiment of the present invention.
3A to 3G are cross-sectional views for explaining step-by-step a method of manufacturing a thin film solar cell according to a second embodiment of the present invention.
4A and 4B are diagrams for describing various embodiments of the light transmission pattern illustrated in FIG. 3E.
5 is a block diagram schematically illustrating an apparatus for manufacturing a thin film solar cell according to an exemplary embodiment of the present invention.
FIG. 6 is a view schematically illustrating the baking unit illustrated in FIG. 5.
FIG. 7 is a view schematically illustrating the conveyor illustrated in FIG. 6.
FIG. 8 is a diagram schematically illustrating a first embodiment of the circulating hot air kiln shown in FIG. 6.
9 is a view for schematically explaining a second embodiment of the circulating hot air kiln shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A to 2G are cross-sectional views for explaining step-by-step a method of manufacturing a thin film solar cell according to a first embodiment of the present invention.

Referring to FIGS. 2A to 2G, a method of manufacturing a thin film solar cell according to a first embodiment of the present invention will be described below.

First, as shown in FIG. 2A, after forming the first electrode 120 on the front surface of the substrate 110, the first electrode 120 is exposed to expose a predetermined region of the substrate 110 through a laser scribing process. ) Is removed at predetermined intervals to form the first separator 130.

The substrate 110 may be a glass substrate, a metal substrate, a plastic substrate, or a flexible substrate. When using a glass substrate as the substrate 110 can reduce the production terminal of the solar cell. On the other hand, when a metal substrate, a plastic substrate, or a flexible substrate is used as the substrate 110, the solar cell can be thinner and lighter, and a flexible solar cell can be manufactured. For example, the metal substrate may be made of aluminum or stainless steel, and the flexible substrate may be made of thin (50 to 200 μm thick) glass, metal foil, or plastic material. The plastic material may be made of thermoplastic semicrystalline polymer (PC) materials such as polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), polyimide (PE), polyethylene naphthalate (PEN), and polyetheretherketone (PEEK). have.

The first electrode 120 may be formed of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, ZnO: H, etc. on the entire surface of the substrate 110 by MOCVD (Metal Organic Chemical Vapor Deposition). At this time, the first electrode 120 may be formed to a thickness of approximately 1㎛.

On the other hand, since the first electrode 120 is a surface into which sunlight is incident, the first electrode 120 may be formed to have an uneven structure through a texturing process so that the incident sunlight may be absorbed to the inside of the solar cell. . The texturing process is a process of forming the surface of a material into an irregular concave-convex structure and processing it into a shape similar to the surface of a fabric, which is an etching process using photolithography, an anisotropic etching process using a chemical solution, Alternatively, the method may be performed through a groove forming process using mechanical scribing.

Next, as shown in FIG. 2B, the photoelectric conversion layer 140 is formed on the entire surface of the substrate 100 on which the first separator 130 and the first electrode 120 are formed.

The photoelectric conversion layer 140 according to the first embodiment may be formed of a silicon-based semiconductor material, and may have a PIN structure in which a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer are sequentially stacked. Here, instead of the I-type semiconductor layer, an N-type or P-type semiconductor layer having a thickness thinner than that of the N-type or P-type semiconductor layer may be formed, and instead of the I-type semiconductor layer, the doping concentration is lower than that of the N-type or P-type semiconductor layer. An N-type or P-type semiconductor layer can be formed.

When the photoelectric conversion layer 140 is formed in the PIN structure as described above, the I-type semiconductor layer is depleted by the P-type semiconductor layer and the N-type semiconductor layer to generate an electric field therein, and is generated by sunlight. The holes and electrons are drift by the electric field and are collected in the P-type semiconductor layer and the N-type semiconductor layer, respectively.

When the photoelectric conversion layer 140 has a PIN structure, it is preferable to form a P-type semiconductor layer on the first electrode 120 and to form a next I-type semiconductor layer and an N-type semiconductor layer. In general, since the drift mobility of the holes is low due to the drift mobility of the electrons, the P-type semiconductor layer is formed close to the light receiving surface in order to maximize the collection efficiency due to incident light.

On the other hand, the photoelectric conversion layer 140 according to the second embodiment is a first photoelectric conversion layer 141, a buffer layer 143, and a second photoelectric conversion layer ( 145 may be formed to have a tandem structure stacked in order.

Each of the first photoelectric conversion layer 141 and the second photoelectric conversion layer 145 is formed to have a PIN structure in which a P-type semiconductor material layer, an I-type semiconductor material layer, and an N-type semiconductor material layer are sequentially stacked.

The buffer layer 143 serves to facilitate the movement of holes and electrons through tunnel junctions between the first and second photoelectric conversion layers 141 and 145, and may be easily removed by a wet etching process. It can be formed as.

On the other hand, the photoelectric conversion layer 140 according to the third embodiment is the first photoelectric conversion layer 141, the first buffer layer 143, the second photoelectric conversion, as shown in the enlarged view "B" of FIG. The layer 145, the second buffer layer 147, and the second photoelectric conversion layer 149 may be formed to have a stacked triple structure stacked in order.

Each of the first to third photoelectric conversion layers 141, 145, and 149 is formed to have a PIN structure in which a P-type semiconductor material layer, an I-type semiconductor material layer, and an N-type semiconductor material layer are sequentially stacked.

Each of the first and second buffer layers 143 and 147 serves to facilitate the movement of holes and electrons through tunnel junctions between the first to third photoelectric conversion layers 141, 145, and 149. It can be formed of a transparent conductive material that can be easily removed by.

Next, as illustrated in FIG. 2C, a transparent conductive layer 150 is formed on the photoelectric conversion layer 140.

The transparent conductive layer 150 scatters the sunlight transmitted through the photoelectric conversion layer 140 and proceeds at various angles, and reflects the light reflected from the second electrode 170 to be described later and re-entered into the photoelectric conversion layer 140. Increasing the ratio improves the efficiency of the solar cell. In this case, the transparent conductive layer 150 may be formed of a transparent conductive material that can be easily removed by a wet etching process. The transparent conductive layer 150 may be omitted.

Next, as shown in FIG. 2D, the contact line 160 is removed by removing a predetermined region of the transparent conductive layer 150 and the photoelectric conversion layer 140 formed on the first electrode 120 through a laser scribing process. To form. In this case, the contact line 160 is formed to be parallel to the first separator 130 to expose a predetermined region of the first electrode 120 adjacent to the first separator 130.

Next, as shown in FIG. 2E, the electrode pattern 170 is connected to the first electrode 120 through the contact line 160 and spaced at predetermined intervals with the second separation unit 180 interposed therebetween. The second electrode is formed on the photoelectric conversion layer 140. In this case, the second separator 180 is formed on the transparent conductive layer 150 on the first electrode 120 to be parallel to the contact line 160 to separate the electrode pattern 170 at predetermined intervals.

The electrode pattern 170 may be formed by one printing process using a hybrid metal paste including Ag, Al, Cu, Ag + Mo, Ag + Ni, Ag + Cu, or the like. At this time, the hybrid metal paste is formed to have a thickness of 11 to 14㎛.

The printing process can be screen printing, inkjet printing, gravure printing, gravure offset printing, reverse printing, flexo printing, or micro It may be a micro-contact printing method. Here, the screen printing method is a method of transferring the ink through the mesh of the screen by raising the ink on the screen, moving while pressing a squeegee (Squeegee) at a predetermined pressure. An inkjet printing method is a method in which very small ink droplets collide with a substrate for printing. The gravure printing method is a method of removing ink on a flat non-wire portion with a doctor blade and transferring only ink on an etched concave wire portion to a substrate by printing. The gravure offset printing method is a method of transferring ink from a printing plate to a blanket and transferring the ink of the blanket back to a substrate. Reverse printing method is a method of printing using a solvent as an ink. Flexo printing is a method of printing ink by embossing the embossed portion. The micro contact printing method is a method of printing a desired material on a stamp by stamping it like a stamp.

Next, as shown in FIG. 2F, the electrode pattern 170 formed on the substrate 110 may be solidified by using hot air circulated while transferring the substrate 110 on which the electrode pattern 170 is formed. 170) to improve the film quality.

In the firing process, the substrate 110 is heated at a first temperature of 200 ° C. to 250 ° C. for a few minutes to maintain for several minutes to several tens of minutes, and then the substrate 110 having the first temperature is removed through a few minutes. By slowly cooling to 2 temperatures, the solvent pattern of the hybrid paste is volatilized, and only the metal material and the binder component are left, and the electrode pattern 170 is fired. Accordingly, the second electrode 170 on which the electrode pattern 170 is fired is formed to have a thickness of 1 to 3 μm.

Specifically, the predetermined process includes a first step of raising the temperature of the substrate 110 to a first temperature, a second step of maintaining the first temperature of the heated substrate 110, and a first temperature of the substrate 110. And a third step of slow cooling to temperature.

Each of the first to third stages supplies gas into a chamber (not shown) installed to cover a conveyor (not shown), and heats the gas to circulate hot air of a constant temperature corresponding to the step temperature. By firing the substrate 110 to be conveyed by the conveyor. In this case, the gas may be air or clean dry air.

In the firing process, the inside of the chamber maintains a constant temperature at a constant temperature and a certain amount of hot air is continuously circulated, so that part of the hot air is exhausted by the amount of gas supplied.

On the other hand, when the substrate 110 is subjected to the slow cooling step of the above-described firing process, since the temperature of the substrate 110 is about 120 ° C., it will adversely affect subsequent processes, and equipment must also use a material that can withstand the temperature. Only problem arises.

Accordingly, the above-described firing process further includes cooling the substrate at a temperature of 30 ° C. or lower while transferring the substrate on which the electrode pattern is baked through the conveyor.

In the step of cooling the substrate 110, the substrate 110 is cooled to a temperature of 30 ° C. or lower by a coolant blown from at least one fan filter unit (not shown) installed at the top and / or bottom of the conveyor. Cools quickly

Next, as illustrated in FIG. 2G, the transparent conductive layer in the second separation unit 180 may be formed by a wet etching process, a wet etching process using the second electrode 170 as a mask, or a wet etching process using a separate mask. The cell separation part 182 separating the photoelectric conversion part 140 is formed by exposing the first electrode by collectively removing the 150 and the photoelectric conversion layer 140.

In the wet etching process, the transparent conductive layer 150 and the photoelectric conversion layer 140 in the second separation unit 180 are collectively removed by using a dipping method or a spray method using an etching solution. Specifically, the optimum etching solution composition was found, and the etching solution temperature and the etching time were optimized in performing the etching process using the etching solution. That is, the optimal etching solution is at least one selected from alkaline solutions such as NaOH, KOH or acidic solutions such as HCl, HNO ₃ , H ₂ SO ₄ , H ₃ PO ₃ , H ₂ O ₂ , and C ₂ H ₂ O ₄ It is preferable to use a solution of. In addition, the etching solution may be diluted with water, and in this case, the concentration of the etching solution is preferably in the range of 5% to 50%. The temperature of the optimum etching solution is preferably maintained at 25 ° C to 80 ° C, and the optimum etching time is preferably in the range of 3 seconds to 2 minutes.

As described above, in the method of manufacturing the thin film solar cell according to the first embodiment of the present invention, after forming the second electrode 170 using a printing method, the second electrode 170 is fired by using hot air circulation. Forming the cell separator 182 by forming a cell separator 182 that separates the photoelectric converter 140 through a wet etching process (using the second electrode 170 as a mask). The process time for this can be reduced, and the cost can be reduced because the laser scribing process is not used.

3A to 3G are cross-sectional views for explaining step-by-step a method of manufacturing a thin film solar cell according to a second embodiment of the present invention.

Referring to FIGS. 3A to 3G, a method of manufacturing a thin film solar cell according to a second exemplary embodiment of the present invention will be described below.

First, a method of manufacturing a thin film solar cell according to a second embodiment of the present invention relates to a method of manufacturing a thin film solar cell used as a substitute for a glass window of a building. Detailed description of the same configuration as the above-described embodiment will be omitted, and the same reference numerals will be given.

First, as shown in FIG. 3A, after forming the first electrode 120 on the front surface of the substrate 110, the first electrode 120 is exposed to expose a predetermined region of the substrate 110 through a laser scribing process. ) Is removed at predetermined intervals to form the first separator 130.

Next, as shown in FIG. 3B, the photoelectric conversion layer 140 is formed on the entire surface of the substrate 100 on which the first separator 130 and the first electrode 120 are formed.

Next, as illustrated in FIG. 3C, a transparent conductive layer 150 is formed on the photoelectric conversion layer 140.

Next, as shown in FIG. 3D, the contact line 160 is removed by removing a predetermined region of the transparent conductive layer 150 and the photoelectric conversion layer 140 formed on the first electrode 120 through a laser scribing process. To form. In this case, the contact line 160 is formed to be parallel to the first separator 130 to expose a predetermined region of the first electrode 120 adjacent to the first separator 130.

Next, as shown in FIG. 3E, the electrode pattern 170 is connected to the first electrode 120 through the contact line 160 and spaced at predetermined intervals with the second separation unit 180 interposed therebetween. The second electrode 170 is formed on the photoelectric conversion layer 140. In this case, the second separator 180 is formed on the transparent conductive layer 150 on the first electrode 120 to be parallel to the contact line 160 to separate the electrode pattern 170 at predetermined intervals. 182a and the light transmission pattern 184a formed by removing the electrode pattern 170 in a predetermined pattern.

Next, as shown in FIG. 3F, the electrode pattern formed on the substrate 110 using hot air circulated while transferring the substrate 110 on which the electrode pattern 170 is formed (in the same manner as in the first embodiment described above) After firing and solidifying 170, the substrate 110 is cooled to a temperature of 30 ° C. or lower while transferring the substrate 110 on which the second electrode 170 is formed through a conveyor.

Next, as shown in FIG. 3G, the transparent conductive layer in the cell isolation pattern 182a and the light transmission pattern 184a through a wet etching process (using the second electrode 170 as a mask or using a separate mask). The cell separation unit 182 separating the photoelectric conversion unit 140 by forming the cell separation unit 182 separating the photoelectric conversion layer 140 by exposing the first electrode by collectively removing the 150 and the photoelectric conversion layer 140 is performed. The light transmitting part 184 exposing the 120 is formed. Here, the wet etching process may use a dipping method or a spray method using an etching solution.

Meanwhile, the light transmission pattern 184a of the second separation unit 180 described above may be formed in a stripe shape crossing the cell separation pattern 182a as illustrated in FIG. 3F, but is not limited thereto. It can be formed in various forms. For example, the light transmission pattern 184a may be formed in a curved shape as shown in FIG. 4A, or may be provided in a letter shape as shown in FIG. 4B. In addition, although not shown, the light transmission pattern 184a may be formed in at least one of a figure, a symbol, and a number, and may be formed in various shapes as necessary.

As described above, in the method of manufacturing the thin film solar cell according to the second embodiment of the present invention, after forming the second electrode 170 by using a printing method, the second electrode 170 is fired by using hot air circulation. Next, a cell separation unit 182 separating the photoelectric conversion unit 140 through a wet etching process (using the second electrode 170 as a mask) is formed, and at the same time, the light transmitting unit 184 is formed on the second electrode 170. By reducing the cost, the laser scribing process is not used, thereby reducing costs, and the cell separation unit 182 and the light transmitting unit 184 without taking a longer process time than the conventional laser scribing process. Sufficient visibility can be obtained for application as a glass window replacement, which is advantageous for mass production.

5 is a block diagram schematically illustrating an apparatus for manufacturing a thin film solar cell according to an exemplary embodiment of the present invention.

Referring to FIG. 5, the apparatus for manufacturing a thin film solar cell according to an exemplary embodiment of the present invention may include a loader unit 200, a first electrode forming unit 210, an electrode separating unit 220, and a photoelectric conversion layer forming unit 230. And a contact line forming unit 240, a printing unit 250, a firing unit 260, a wet etching unit 270, and an unloader unit 280.

The loader part 200 supplies a substrate (not shown) to the first electrode forming part 210. In this case, the substrate may be a glass substrate, a metal substrate, a plastic substrate, or a flexible substrate.

As illustrated in FIG. 2A or 3A, the first electrode forming unit 210 forms the first electrode 120 on the front surface of the substrate supplied by the loader 200. To this end, the first electrode forming unit 210 forms the first electrode 120 on the substrate using a MOCVD process or a PECVD process. The first electrode forming unit 210 may be configured in a cluster form or in an inline form.

As shown in FIG. 2A or FIG. 3A, the electrode separator 220 removes a predetermined region of the first electrode 120 formed on the front surface of the substrate by the first electrode forming unit 210, thereby removing the first electrode ( A first separation unit 130 is formed to separate the 120 at predetermined intervals. In this case, the electrode separator 220 may form the first separator 130 using a laser scribing process.

On the other hand, since the first electrode 120 is a surface to which sunlight is incident, it is important to allow the incident sunlight to be absorbed to the inside of the solar cell as much as possible. For this purpose, the first electrode forming unit 210 and the electrode are separated. It is preferable that a texturing part (not shown) is formed between the parts 220 to form texturing on the surface of the first electrode 120.

As shown in FIG. 2B or 3B, the photoelectric conversion layer forming unit 230 forms the photoelectric conversion layer 140 on the entire surface of the substrate on which the first electrode 120 and the first separation unit 130 are formed. . The photoelectric conversion layer forming unit 230 is arranged in a cluster form, and the P-type semiconductor material, the I-type semiconductor material, and the N-type semiconductor material are sequentially disposed on the front surface of the substrate using a plurality of process chambers for performing chemical vapor deposition processes. At least one photoelectric conversion layer 140 is formed in a stacked PIN structure. In this case, as shown in the enlarged view "A" or "B" of FIG. 2B or 3B, when the photoelectric conversion layer 140 is formed to have a plurality of stacked structures, that is, a tandem or triple structure, the photoelectric conversion layers ( Buffer layers 143 and 147 are formed between 141, 145 and 149.

Meanwhile, in the apparatus for manufacturing a thin film solar cell according to an exemplary embodiment of the present invention, as illustrated in FIG. 2C or 3C, a transparent conductive layer for forming the transparent conductive layer 150 on the photoelectric conversion layer 140 is formed. It may be configured to further include a portion 235.

The transparent conductive layer forming unit 235 forms the transparent conductive layer 150 on the photoelectric conversion layer 140 using a MOCVD process or a PECVD process. The transparent conductive layer 150 may be omitted according to the structure of the solar cell, in which case the transparent conductive layer forming unit 245 is also omitted.

As illustrated in FIG. 2D or 3D, the contact line forming unit 240 may include the transparent conductive layer 150 and the photoelectric conversion layer 140 formed on the first electrode 120 adjacent to the first separation unit 130. The contact line 160 is formed by removing a predetermined region of the cross-section. Accordingly, the photoelectric conversion layer 140 is spaced at a predetermined interval with the contact line 160 interposed therebetween. The contact line forming unit 240 may form the contact line 160 using a laser scribing process.

As illustrated in FIG. 2E, the printing unit 250 according to the first exemplary embodiment may be connected to the first electrode 120 through the contact line 160 and may be predetermined with the second separation unit 180 interposed therebetween. An electrode pattern 170 spaced apart from each other is printed on the transparent conductive layer 150 to form a second electrode 170 on the transparent conductive layer 150. In this case, the second separator 180 is formed on the transparent conductive layer 150 on the first electrode 120 to be parallel to the contact line 160 to separate the electrode pattern 170 at predetermined intervals.

The printing unit 250 forms the electrode pattern 170 by a single printing process using a hybrid metal paste including Ag, Al, Cu, Ag + Mo, Ag + Ni, Ag + Cu, or the like. . At this time, the hybrid metal paste is formed to have a thickness of 11 to 14㎛.

The printing unit 250 may include screen printing, inkjet printing, gravure printing, gravure offset printing, reverse printing, and flexo printing. A printing process may be performed by using a Flexo Printing or Micro Contact Printing method.

As illustrated in FIG. 3E, the printing unit 250 according to the second exemplary embodiment may be connected to the first electrode 120 through the contact line 160 and may be predetermined with the second separation unit 180 interposed therebetween. The electrode patterns 170 spaced apart from each other are printed on the transparent conductive layer 150. In this case, the second separator 180 is formed on the transparent conductive layer 150 on the first electrode 120 to be parallel to the contact line 160 to separate the electrode pattern 170 at predetermined intervals. 182a and the light transmission pattern 184a from which the electrode pattern 170 separated by the cell separation pattern 182a is removed in a predetermined pattern.

The printing unit 250 is the electrode pattern 170 by a single printing process described above using a hybrid metal paste including a Ag, Al, Cu, Ag + Mo, Ag + Ni, Ag + Cu or the like. To form. At this time, the hybrid metal paste is formed to have a thickness of 11 to 14㎛.

The firing unit 260 improves the film quality of the second electrode 170 by firing and solidifying the electrode pattern 170 as illustrated in FIG. 2F or 3F. That is, the firing unit 260 calcinates the electrode pattern 170 formed on the substrate by using hot air circulated while transferring the substrate on which the electrode pattern 170 is formed. To this end, the firing unit 260 is configured to include a conveyor 300, and a circulating hot air firing furnace 310, as shown in FIG.

The conveyor 300 is installed to penetrate the circulating hot air firing furnace 310 to transfer the substrate 110 on which the electrode pattern 170 is formed. To this end, the conveyor 300, as shown in Figure 7, the first and second conveyor frame (301a, 301b), a plurality of drive shaft 303, a plurality of rollers 305, a drive motor 307, And a plurality of guide rollers 309.

The first and second conveyor frames 301a and 301b are installed side by side to be spaced at predetermined intervals.

Each of the plurality of drive shafts 303 is rotatably installed to have a predetermined distance between the first and second conveyor frames 301a and 301b.

The plurality of rollers 305 are installed at each of the plurality of drive shafts 303 at predetermined intervals to transfer the substrate 110 according to the rotation of the drive shaft 303.

The drive motor 307 is installed on the outer surface of the first conveyor frame 301a to simultaneously rotate the plurality of drive shafts 303. At this time, the rotational force of the drive motor 307 is transmitted to each of the plurality of drive shafts 303 through a rotation transmission member (not shown) installed inside the first conveyor frame 301a. The rotation transmission member is connected to each of the rotation shaft of the drive motor 307 and the plurality of drive shafts 303, and may be configured as a chain module, a gear module, or a belt module.

Each of the plurality of guide rollers 309 is rotatably installed on the upper surface of each of the first and second conveyor frames 301a and 301b at predetermined intervals so as to provide both side surfaces of the substrate 110 transported by the plurality of rollers 305. The guide prevents the substrate 110 from being separated from the conveyor 300.

In FIG. 6, the circulating hot air firing furnace 310 includes a temperature raising part 312, a temperature maintaining part 314, and a slow cooling part 316.

The temperature raising part 312 heats the substrate 110 transferred by the conveyor 300 for a few minutes using the hot air circulated for a few minutes to heat the substrate 110 at a temperature of 200 ° C to 250 ° C, preferably 230 ° C. Increase the temperature.

As shown in FIG. 8, the temperature increasing part 312 according to the first embodiment includes a chamber 410, an air supply blower 420, a gas circulation fan 430, and a guide plate 440. , A heating means 450, and an exhaust fan 460.

The chamber 410 is installed to cover the conveyor 300. At this time, the conveyor 300 is installed to penetrate one side wall and the other side wall of the chamber 410 to transfer the substrate 110 in the horizontal direction.

The air supply blower 420 is installed above the inside of the chamber 410 to supply the gas 422 to the inside of the chamber 410. In this case, the gas 422 may be air or clean dry air.

The gas circulation fan 430 is installed at one inner corner of the chamber 110 to circulate the gas 422 supplied by the air supply blower 420 in the chamber 420.

The guide plate 440 is installed on the conveyor 300 to guide the circulation of the gas 422.

The heating means 450 heats the gas 422 circulated by the gas circulation fan 430 to generate hot air 452 of a constant temperature. The heating means 450 may be configured as a heater using a resistance heating element, or a heater using infrared rays, but preferably, a heater using a resistance heating element.

On the other hand, the heating means 450 heats the gas 422 under the control of the temperature control device 454 installed in the chamber 410 to be adjacent to the heating means 450 to generate a hot air 452 of a constant temperature. At this time, the temperature control device 454 controls the heating means 450 so that the temperature inside the chamber 410 is constantly maintained at a temperature of 200 ℃ ~ 250 ℃, that is, a temperature of 250 ℃.

The exhaust fan 460 is installed at one bottom surface of the chamber 410 opposite to the gas circulation fan 420 to exhaust a portion of the hot air 452 circulating to the outside. On the other hand, the air supply blower 420 supplies new gas 422 into the chamber 410 by the amount exhausted through the exhaust fan 460 so that the clean gas 422 is always introduced into the chamber 410.

The temperature increasing unit 312 according to the first embodiment uses a supply air blower 420, a gas circulation fan 430, and a heating unit 450 to maintain a constant temperature and a predetermined amount of hot air 452 inside the chamber 410. ) While continuously circulating the exhaust gas to the outside of the solvent volatilized from the paste of the electrode pattern 170 to the temperature of the substrate 110 transferred to the conveyor 300, 200 ℃ ~ 250 ℃ temperature, 230 ℃ Increase the temperature.

As shown in FIG. 9, the temperature increasing part 312 according to the second embodiment includes a chamber 410, an air supply blower 520, a guide plate 440, a heating means 450, and an exhaust fan 460. It is configured to include.

The chamber 410 is installed to cover the conveyor 300. At this time, the conveyor 300 is installed to penetrate one side wall and the other side wall of the chamber 410 to transfer the substrate 110 in the horizontal direction.

The air supply blower 520 is installed at one inner corner of the chamber 410 to supply the gas 422 into the chamber 410, and circulate the gas 422 inside the chamber 410. In this case, the gas 422 may be air or clean dry air. To this end, the air supply blower 520 includes an air supply fan 522, a discharge port 524, and a hot air intake port 526.

The air supply fan 522 is installed inside the fan housing installed at one outer wall of the chamber 410 to discharge the gas 422 to the discharge port 524.

The discharge port 524 is installed through one inner corner portion of the chamber 410 to communicate with the fan housing. The discharge port 524 discharges the gas 422 supplied into the chamber 410 as the air supply fan 522 is driven.

The hot air suction port 526 is formed to communicate with one side of the discharge port 524. A part of the hot air 452 circulated in accordance with the flow of the gas 422 discharged to the discharge port 524 is sucked into the hot air suction port 526. Accordingly, the new gas 422 and the gas 452 circulating in the chamber 410 are discharged together with the rotation of the air supply fan 522.

The guide plate 440 is installed on the conveyor 300 to guide the circulation of the gas 422.

The heating means 450 heats the gas 422 circulated by the air supply blower 520 to generate hot air 452 of a constant temperature. The heating means 450 may be configured as a heater using a resistance heating element, or a heater using infrared rays, but preferably, a heater using a resistance heating element.

On the other hand, the heating means 450 heats the gas 422 under the control of the temperature control device 454 installed in the chamber 410 to be adjacent to the heating means 450 to generate a hot air 452 of a constant temperature. At this time, the temperature control device 454 controls the heating means 450 so that the temperature inside the chamber 410 is constantly maintained at a temperature of 200 ℃ ~ 250 ℃, that is, a temperature of 250 ℃.

The exhaust fan 460 is installed at one bottom surface of the chamber 410 opposite to the gas circulation fan 420 to exhaust a portion of the hot air 452 circulating to the outside. On the other hand, the air supply blower 520 supplies the fresh gas 422 into the chamber 410 by the amount exhausted through the exhaust fan 460 so that the clean gas 422 is always introduced into the chamber 410.

The temperature raising part 312 according to the second embodiment continuously circulates a constant temperature and a predetermined amount of hot air 452 inside the chamber 410 using one air supply blower 520 and the heating means 450. While exhausting the solvent volatilized in the paste of the electrode pattern 170 to the outside to increase the temperature of the substrate 110 transferred by the conveyor 300 to a temperature of 200 ℃ to 250 ℃, that is, 230 ℃.

In FIG. 6, the temperature maintaining part 314 maintains the temperature of the substrate 110 transferred through the temperature raising part 312 by the conveyor 300 for several minutes to several tens of minutes. To this end, since the temperature maintaining part 314 is configured in the same manner as the temperature rising part 312 shown in FIG. 8 or 9, a detailed description thereof will be replaced with the description of the temperature rising part 312 described above. Meanwhile, the inside of the chamber 410 of the temperature maintaining part 314 is constantly maintained at a temperature of 200 ° C to 250 ° C, that is, 230 ° C, thereby keeping the temperature of the substrate 110 heated to 230 ° C as it is. Hold for from several tens of minutes.

The slow cooling unit 316 gradually cools the temperature of the substrate 110 transferred through the temperature maintaining unit 314 by the conveyor 300 for several minutes. To this end, since the slow cooling unit 316 is configured in the same manner as the heating unit 312 shown in FIG. 8 or 9, a detailed description thereof will be replaced with the description of the heating unit 312 described above. Meanwhile, the inside of the chamber 410 of the slow cooling unit 316 is constantly maintained at a temperature of 100 ° C. to 130 ° C., that is, a temperature of 120 ° C., thereby gradually cooling the temperature of the substrate 110 to about 120 ° C. for several minutes.

As described above, the circulating hot air firing furnace 310 may include an electrode pattern formed on the substrate 110 transferred by the conveyor 300 using the temperature increasing part 312, the temperature maintaining part 314, and the slow cooling part 316. After heating the temperature of 170 and maintaining it for a predetermined period of time, a solvent (Solvent) of the electrode pattern 170 is volatilized by slow cooling to a predetermined temperature, so that only the metal material and the binder component remain, and the electrode pattern 170 is fired to be solidified. .

On the other hand, since the substrate 110 discharged from the circulating hot air kiln 310 is about 120 ° C., it may adversely affect subsequent processes. Accordingly, the firing unit 260, as shown in Figure 6, the cooling unit 320a for cooling the temperature of the substrate 110 discharged from the circulating hot air firing furnace in accordance with the drive of the conveyor 300, 30 ° C or less, 320b) is further included.

The cooling units 320a and 320b include at least one fan filter unit 322.

Each of the fan filter units 322 is installed at the upper and / or lower portion of the conveyor 300 to have a height difference of about 100 mm to 500 mm from the substrate 110 transferred by the conveyor 300. Each of the fan filter units 322 cools the temperature of the substrate 110 to 30 ° C. or lower by blowing a refrigerant to the front and / or rear surfaces of the substrate 110 transferred by the conveyor 300. Here, the refrigerant may be clean air or clean dry air.

Referring back to FIG. 5, the wet etching unit 270 may use the dipping or spray wet etching process to form the transparent conductive layer 150 and the photoelectric conversion layer 140 in the second separation unit 180. ) In a batch. Specifically, the optimum etching solution composition was found, and the etching solution temperature and the etching time were optimized in performing the etching process using the etching solution. That is, the optimal etching solution is at least one selected from alkaline solutions such as NaOH, KOH or acidic solutions such as HCl, HNO ₃ , H ₂ SO ₄ , H ₃ PO ₃ , H ₂ O ₂ , and C ₂ H ₂ O ₄ It is preferable to use a solution of. In addition, the etching solution may be diluted with water, and in this case, the concentration of the etching solution is preferably in the range of 5% to 50%. The temperature of the optimum etching solution is preferably maintained at 25 ° C to 80 ° C, and the optimum etching time is preferably in the range of 3 seconds to 2 minutes.

As shown in FIG. 2G, the wet etching unit 270 according to the first embodiment masks the wet etching process (the second electrode 170) using the second electrode 170 formed by the firing unit 260. Or a separate mask) to remove the transparent conductive layer 150 and the photoelectric conversion layer 140 in the second separation unit 180 together to expose the first electrode 120 ( 182 is formed. As a result, the photoelectric conversion layer 140 is separated by the cell separation unit 182 at predetermined intervals, thereby forming a plurality of solar cells electrically connected in series on the substrate 110.

As shown in FIG. 3G, the wet etching unit 270 according to the second embodiment masks the wet etching process (the second electrode 170) using the second electrode 170 formed by the firing unit 260. Or a separate mask) to remove the cell separation pattern 182a of the second separator 180 and the transparent conductive layer 150 and the photoelectric conversion layer 140 in the light transmission pattern 184a together. As a result, the cell separator 182 and the light transmitting part 184 exposing the first electrode 120 are formed. As a result, the photoelectric conversion layer 140 is separated by the cell separation unit 182 at predetermined intervals, thereby forming a plurality of solar cells electrically connected in series on the substrate 110. The first electrode 120 is exposed to enhance the light transmission region of the sunlight, thereby securing sufficient visibility for application as a glass window substitute.

The unloader 280 unloads the substrate on which the etching process is completed by the wet etching unit 270 to the outside.

Meanwhile, a drying unit (not shown) may be installed between the wet etching unit 270 and the unloader unit 280.

The drying unit dries the substrate to a temperature of 100 ° C. to 150 ° C. by using hot air circulated while transferring the substrate on which the etching process is completed in the wet etching unit 270 to the conveyor, and cools the dried substrate to a temperature of 30 ° C. or less. . To this end, since the drying unit is configured in the same way as the firing unit 260 shown in FIGS. 6 to 9, a detailed description thereof will be replaced with the description of the firing unit 260 described above.

As described above, in the apparatus for manufacturing a thin film solar cell according to an exemplary embodiment of the present invention, the second electrode 170 is formed by using a printing method, and then the second electrode is formed by hot air circulating using the circulating hot air firing furnace 310. 170 is fired, and then dissolved in a solution to form a cell separator 182 that separates the photoelectric converter 140 through a wet etching process, or the cell separator 182 and the second electrode 170. By forming the light transmitting portion 184 in the laser scribing process, the cost is reduced, and the cell separation unit 182 and the light are not required to take longer than the conventional laser scribing process. Through the permeable portion 184, it is possible to secure sufficient visibility for application as a glass window substitute, which is advantageous for mass production.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

110 substrate 120 first electrode
130: first separation unit 140: photoelectric conversion layer
150: transparent conductive layer 160: contact line
170: second electrode 180: second separator
182: cell separator 184: light transmitting portion
200: loader portion 210: first electrode forming portion
220: electrode separation unit 230: photoelectric conversion layer forming unit
235: transparent conductive layer forming portion 240: contact line forming portion
250: printing unit 260: baking unit
270: wet etching portion 280: unloader portion

Claims (24)

A first electrode forming unit forming a first electrode on the front surface of the substrate;
An electrode separator to form a first separator by removing a predetermined region of the first electrode;
A photoelectric conversion layer forming unit forming a photoelectric conversion layer on an entire surface of the substrate including the first electrode and the first separation unit;
A contact line forming unit forming a contact line by removing a predetermined region of the photoelectric conversion layer formed on the first electrode;
A printing part connected to the first electrode through the contact line and printed on the photoelectric conversion layer by printing an electrode pattern spaced at a predetermined interval with a second separation part interposed therebetween to form a second electrode;
A firing unit for solidifying the second electrode using hot air circulated; And
Fabrication of a thin film type solar cell, comprising a wet etching unit exposing the first electrode in the second separation unit by removing the photoelectric conversion layer exposed by the second separation unit through a wet etching process. Device. The method of claim 1,
The second separation unit,
A cell separation pattern for separating the second electrode at predetermined intervals; And
The thin film solar cell manufacturing apparatus, characterized in that it comprises a light transmission pattern formed in a predetermined pattern on the second electrode. The method of claim 1,
The printing unit may form the electrode pattern by printing an electrode material made of a paste including at least one of silver (Ag), aluminum (Al), and copper (Cu) on the photoelectric conversion layer. Battery manufacturing apparatus. The method according to claim 1 or 2,
It further comprises a transparent conductive layer forming unit for forming a transparent conductive layer on the photoelectric conversion layer,
The contact line forming unit may remove the predetermined region of the transparent conductive layer and the photoelectric conversion layer together to form the contact line.
The wet etching unit may remove the transparent conductive layer and the photoelectric conversion layer in the second separation unit together to expose the first electrode. The method of claim 1,
The wet etching unit further comprises a drying unit for drying the substrate to a predetermined temperature by using hot air circulated while transferring the substrate on which the wet etching process is completed to the conveyor, and cooling the dried substrate to a temperature of 30 ° C. or lower. Apparatus for producing a thin-film solar cell, characterized in that. A printing unit printing an electrode material on the substrate to form an electrode pattern spaced at a predetermined interval on the substrate; And
And a firing unit for solidifying the electrode pattern formed on the substrate by using hot air circulated while transporting the substrate on which the electrode pattern is formed. 7. The method according to claim 1 or 6,
The firing unit,
A conveyor for transporting the substrate on which the electrode pattern is formed; And
And a circulating hot air firing furnace for firing the electrode pattern formed on the substrate conveyed by the conveyor using the circulated hot air. The method of claim 7, wherein
The circulating hot air firing furnace,
A temperature increasing unit for raising the substrate to a first temperature;
A temperature holding unit for maintaining a first temperature of the substrate heated by the temperature increasing unit; And
And a slow cooling unit configured to slowly cool the first temperature of the substrate to a second temperature. The method of claim 8,
Each of the temperature increasing part, the temperature holding part, and the slow cooling part,
A chamber installed to cover the conveyor;
An air supply blower installed in the chamber to supply gas into the chamber;
A gas circulation fan installed at an upper side of the chamber to circulate the gas supplied by the air supply blower in the chamber;
A guide plate installed on the conveyor to guide circulation of the gas;
Heating means for heating the gas circulated by the gas circulation fan under the control of a temperature regulating device to generate hot air at a constant temperature; And
And an exhaust fan installed at a bottom surface of the chamber and configured to exhaust a portion of the circulating hot air. The method of claim 9,
The heating means is a device for manufacturing a thin-film solar cell, characterized in that consisting of a resistance heating element heater. The method of claim 8,
Each of the temperature increasing part, the temperature holding part, and the slow cooling part,
A chamber installed to cover the conveyor;
An air supply blower installed on the chamber wall to supply gas into the chamber and to circulate the gas in the chamber;
A guide plate installed on the conveyor to guide circulation of the gas;
Heating means for heating a gas circulated by the air supply blower to generate hot air at a constant temperature according to a control of a temperature regulating device; And
And an exhaust fan installed at a bottom surface of the chamber and configured to exhaust a portion of the circulating hot air. The method of claim 10,
The air supply blower,
An air supply fan for supplying the gas;
A discharge port through which the gas is discharged by driving the air supply fan; And
And a hot air suction port formed to communicate with the discharge port and into which a part of the circulating hot air is sucked in accordance with the flow of the gas discharged to the discharge port. The method of claim 7, wherein
The firing unit further comprises a cooling unit for cooling the temperature of the substrate discharged from the circulating hot air firing furnace according to the drive of the conveyor 30 ℃ or less, characterized in that the thin film type solar cell manufacturing apparatus. The method of claim 13,
The cooling unit may include at least one fan filter unit installed at an upper portion and / or a lower portion of the conveyor to blow a refrigerant to the substrate to cool the temperature of the substrate. Battery manufacturing apparatus. Forming a first electrode on the front surface of the substrate;
Removing a predetermined region of the first electrode to form a first separator;
Forming a photoelectric conversion layer on the entire surface of the substrate including the first electrode and the first separator;
Forming a contact line by removing a predetermined region of the photoelectric conversion layer formed on the first electrode;
Forming a second electrode on the photoelectric conversion layer by printing an electrode pattern connected to the first electrode through the contact line and spaced at a predetermined interval with a second separation part interposed therebetween;
Solidifying the electrode pattern using hot air circulated; And
And removing the photoelectric conversion layer exposed by the second separation part through a wet etching process to expose the first electrode in the second separation part. The method of claim 15,
The second separation unit,
A cell separation pattern for separating the second electrode at predetermined intervals; And
The method of manufacturing a thin film solar cell comprising a light transmitting pattern formed in a predetermined pattern on the second electrode. The method of claim 15,
The printing process is a thin film type, characterized in that for forming the electrode pattern by printing an electrode material consisting of a paste containing at least one of silver (Ag), aluminum (Al), and copper (Cu) on the photoelectric conversion layer. Method of manufacturing a solar cell. The method according to claim 15 or 16,
It further comprises a step of forming a transparent conductive layer on the photoelectric conversion layer,
When the contact line is formed, predetermined regions of the transparent conductive layer and the photoelectric conversion layer are removed together,
And removing the transparent conductive layer and the photoelectric conversion layer in the second separation part together during the wet etching process. The method of claim 15,
And drying the substrate to a predetermined temperature by using hot air circulated while transferring the substrate on which the wet etching process is completed, to a conveyor, and cooling the dried substrate to a temperature of 30 ° C. or lower. Method of manufacturing a solar cell. Printing an electrode material on the substrate to form an electrode pattern spaced at a predetermined interval on the substrate; And
And a step of solidifying the electrode pattern formed on the substrate using hot air circulated while transferring the substrate on which the electrode pattern is formed. The method of claim 15 or 20,
The solubilization treatment step,
Transferring a substrate on which the electrode pattern is formed according to driving of a conveyor; And
And firing the electrode pattern formed on the substrate transferred by the conveyor using circulated hot air. The method of claim 21,
Firing the electrode pattern,
A first step of raising the substrate to a first temperature;
A second step of maintaining a first temperature of the elevated substrate; And
And a third step of slowly cooling the first temperature of the substrate to a second temperature. The method of claim 22,
Each of the first to third steps,
Supplying gas into a chamber provided to cover the conveyor and circulating the gas in the chamber;
Maintaining a constant temperature inside the chamber under the control of a temperature control device, and heating the circulated gas through a heating means to generate hot air at a constant temperature; And
And exhausting part of the circulating hot air. The method of claim 21,
The solidification process may further include cooling the temperature of the substrate to be transferred at a temperature of 30 ° C. or lower at the same time as transferring the substrate on which the electrode pattern is fired through the conveyor. Way.

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