CN219873531U - 800W high-power high-density bicolor light source - Google Patents

Abstract

The utility model relates to the field of COB light sources, and discloses an 800W high-power high-density bicolor light source, which comprises a red copper substrate, an aluminum nitride ceramic support, sixty wafers and lenses, wherein copper foil circuits are arranged in the red copper substrate, a boss and a bonding pad are etched on the red copper substrate, a jumper wire for realizing thermoelectric separation is arranged on the red copper substrate, the front surface and the back surface of the aluminum nitride ceramic support are connected and communicated through a through hole copper column, a solid crystal area and an electric circuit are arranged on the aluminum nitride ceramic support, the wafers are enclosed into a square retaining wall structure through a wall glue, the wafers are adhered to the solid crystal area through high-heat-conductivity nanoscale silver paste sintering or high-heat-conductivity alloy, the wafers are welded on the ceramic support through gold wires, the aluminum nitride ceramic support is welded on the boss in a reflow manner, and the lenses are tightly covered on the surfaces of the wafers.

Description

800W high-power high-density bicolor light source

Technical Field

The utility model relates to the field of COB light sources, in particular to an 800W high-power high-density double-color light source.

Background

The COB light source is a high-light-efficiency integrated surface light source technology for directly attaching an LED chip to a mirror metal substrate with high reflectivity, and the technology eliminates the bracket concept, and has no electroplating, reflow soldering and surface mounting procedures, so that the procedures are reduced by nearly one third, and the cost is saved by one third.

Such as a COB surface light source of chinese patent CN 203099433U. The COB area light source comprises a substrate and a plurality of LED chips, wherein at least three circuit lines which are not conductive to each other are arranged on the substrate at intervals, the circuit line on one side of the circuit lines is connected with the positive electrode of a power supply, the circuit line on the other side of the circuit lines is connected with the negative electrode of the power supply, and the LED chips are connected between the circuit lines which are arranged at intervals in a conducting mode. According to the COB area light source provided by the utility model, after any LED chip is broken, a dark line is not formed on the light emitting surface of the COB area light source, but only a dark point exists at the broken LED chip, and the dark point does not influence the normal use of the COB area light source, and even can be ignored.

The existing COB light source can not realize thermoelectric separation, so that the overall heat dissipation effect is poor, and improvement is urgently needed, and therefore, an 800W high-power high-density double-color light source is provided.

Disclosure of Invention

(one) solving the technical problems

Aiming at the defects of the prior art, the utility model provides an 800W high-power high-density double-color light source, which solves the problems.

(II) technical scheme

In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides an 800W high-power high density bicolor light source, includes red copper base plate, aluminium nitride ceramic support, sixty wafers and lens, is equipped with copper foil circuit in the red copper base plate, and the etching has the boss on the red copper base plate to and the pad is equipped with the wire jumper that is used for realizing thermoelectric separation on the red copper base plate, and aluminium nitride ceramic support front and back are connected through the through-hole copper post and are linked, are equipped with solid brilliant district and electric wire on the aluminium nitride ceramic support, and the wafer encloses into square barricade structure through the enclosure glue, and the wafer is through high heat conduction nanoscale silver thick liquid sintering or high heat conduction alloy adhesion on the solid brilliant district, and the wafer is through gold thread welding on ceramic support, and aluminium nitride ceramic support reflow soldering is on the boss, and the lens is hugged closely and is covered on the wafer surface.

Preferably, sixty wafers are independently driven in two ways, wherein one way is thirty-six wafers, the other way is twenty-four wafers, and the two ways of wafers are respectively coated with fluorescent powder with different colors.

Preferably, the surfaces and the back surfaces of the lug boss, the bonding pad, the copper foil circuit and the aluminum nitride ceramic support are plated with nickel, palladium and gold.

Preferably, the ceramic support electric circuit adopts a circuit mode of 12 strings 5 and dividing the circuit into two paths of independent driving, wherein one path is 12 strings 3 and the other path is 12 strings 2 and the other path is 12 strings.

Preferably, the ceramic support electric circuit and the copper foil circuit on the red copper substrate form a circuit mode of 12 strings 5 and two paths of driving.

Preferably, the wafer is a wafer of a positive vertical structure.

(III) beneficial effects

Compared with the prior art, the utility model provides an 800W high-power high-density double-color light source, which has the following beneficial effects:

1. the 800W high-power high-density bicolor light source uses a red copper substrate, has high heat conductivity, uses an aluminum nitride ceramic bracket, has high pressure resistance and high heat conductivity, and has good heat dissipation effect; the red copper substrate adopts a jumper mode, so that double-color two-way single driving is realized, thermoelectric separation is realized, heat emitted by a wafer during working can be timely transmitted to the heat dissipation plate through the substrate, the structure is simple and compact, the performance is stable, the service life of the 800W high-power high-density double-color light source is correspondingly prolonged, and mass production is facilitated; the high-heat-conductivity nano silver paste sintering or high-heat-conductivity alloy welding die bonding is adopted, so that the conventional low-heat-conductivity micro-scale common silver paste or insulating glue die bonding in the prior art can be replaced, and the wafer cannot fall off due to environmental influence; and fluorescent powder with corresponding colors is coated on the wafer, so that the 800W high-power high-density bicolor light source can emit light with two different colors.

2. The 800W high-power high-density bicolor light source has the advantages that the wafer is a normal-mounted vertical-structure wafer, gold wires with the diameter of 38um are adopted for welding, 5-7 gold wires are welded on each wafer, and the problem that the broken wires die the lamp due to the connection of electric appliances is prevented.

3. The 800W high-power high-density bicolor light source has the advantages that the lens is a glass sheet with high light transmittance and low reflectivity, the light transmittance of the light source can be improved, the glue surface is protected from being polluted, the direct contact between the glue surface and the environment can be isolated, the ageing of the glue surface is slowed down, and the service life of a product is greatly prolonged.

Drawings

FIG. 1 is a schematic diagram of the structure of the present utility model;

FIG. 2 is a schematic view of a red copper substrate boss;

FIG. 3 is a copper foil circuit diagram of a red copper substrate;

FIG. 4 is a diagram of a red copper substrate pad;

FIG. 5 is a front view of a ceramic stent;

FIG. 6 is a rear view of a ceramic bracket;

FIG. 7 is a diagram of copper columns connected to the front and back sides of a ceramic bracket;

fig. 8 is a die bond wire dot powder diagram.

In the figure: 1. a red copper substrate; 2. an aluminum nitride ceramic support; 3. a wafer; 4. a lens; 5. a red copper substrate pad; 6. screw holes; 7. a boss; 8. copper foil lines; 9. a ceramic support bonding pad; 10. ceramic support electrical wiring; 11. a through-hole copper pillar; 12. a die bonding area; 13. gold wires; 14. fluorescent powder.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Referring to fig. 1-8, an 800W high-power high-density bicolor light source comprises a red copper substrate 1, an aluminum nitride ceramic support 2, sixty wafers 3 and a lens 4, wherein copper foil circuits 8 are arranged in the red copper substrate 1, a boss 7 and a bonding pad 5 are etched on the red copper substrate 1, a jumper wire for realizing thermoelectric separation is arranged on the red copper substrate 1, the front surface and the back surface of the aluminum nitride ceramic support 2 are connected and communicated through a through hole copper column 11, a die fixing area 12 and an electric circuit 10 are arranged on the aluminum nitride ceramic support 2, the wafers 3 are enclosed into a square retaining wall structure through enclosing glue, the wafers 3 are adhered on the die fixing area 12 through high-heat-conductivity nanoscale silver paste sintering or high-heat-conductivity alloy, the wafers 3 are welded on the ceramic support 2 through gold wires 13, the aluminum nitride ceramic support 2 is welded on the boss 7 in a reflow mode, and the lens 4 is tightly covered on the surfaces of the wafers 3. The red copper substrate 1 is used to have high thermal conductivity, the aluminum nitride ceramic bracket 2 is used to have high pressure resistance and high thermal conductivity, so that the 800W high-power high-density double-color light source has good heat dissipation effect, the high pressure resistance can reach more than 3000V, the maximum output current of a single wafer 3 can reach 4-5A, the highest power can reach 800W, in circuit design, the bottom of the copper substrate is used as an anode or a cathode in the past, thermoelectric cannot be separated, the light source performance is poor, the problem of cross wires exists at this time, a jumper mode is adopted, double-color two-way single driving is realized, thermoelectric separation is realized, heat emitted by the wafer 3 during operation can be timely transmitted to a heat dissipation plate through the substrate, the structure is simple and compact, the performance is stable, the service life of the 800W high-power high-density double-color light source is correspondingly prolonged, and mass production is facilitated; the high-heat-conductivity nano silver paste sintering or high-heat-conductivity alloy welding die bonding is adopted, so that the conventional low-heat-conductivity common silver paste or insulating glue die bonding in the prior art can be replaced, and the wafer 3 cannot fall off due to environmental influence; and by spot coating fluorescent powder with different colors on 2 paths of wafers on the wafer 3, the 800W high-power high-density bicolor light source can emit light with two different colors, and the light mixing effect is good.

Sixty wafers 3 are independently driven in two paths, wherein one path is thirty-six wafers 3, the other path is twenty-four wafers 3, and the two paths of wafers 3 are respectively coated with fluorescent powder with different colors.

The surface and the back of the boss 7, the bonding pad 5, the copper foil circuit 8 and the aluminum nitride ceramic bracket 2 are all processed with nickel plating palladium gold.

The ceramic support circuit 10 adopts a circuit mode of 12 strings 5 parallel and two paths of independent driving, wherein one path is 12 strings 3 parallel and the other path is 12 strings 2 parallel, and the ceramic support circuit can be connected with different red copper substrates 1 in series and parallel to realize that the 12 strings 5 parallel and 2 paths of driving or the 12 strings 5 parallel and 1 path of driving are realized, so that the types of products are more various, and the ceramic support circuit is shown in figures 2, 3, 4, 5 and 6.

The ceramic support circuit 10 and the copper foil circuit 8 on the red copper substrate 1 form a 12-string 5 and are driven in two paths.

The size specification of the red copper substrate 1 is 45 multiplied by 80mm multiplied by 3mm, the size specification of the boss 7 is 17.05 multiplied by 25mm, the screw hole specification of the red copper substrate 1 is phi 7.2mm, the size specification of the aluminum nitride ceramic support 2 is 26 multiplied by 26mm multiplied by 0.38mm, the product power is high, the structure of the wafer 3 is compact, the light emitting efficiency of a light source is improved, and the production cost is saved.

The wafers 3 are vertical structure wafers, the diameter of the gold wires 13 is phi 38um, and each wafer 3 is welded with 5-7 gold wires 13, so that the problem of broken wires and dead lamps caused by electrical connection is prevented.

The lens 4 is a glass sheet with high light transmittance and low reflectivity, so that the light transmittance of a light source can be improved, a gold thread is protected from being broken by external extrusion, the gold thread is not polluted by a rubber surface, the rubber surface can be isolated from being in direct contact with the environment, the ageing of the rubber surface is slowed down, and the service life of a product is greatly prolonged. And the two sides of the lens are respectively provided with the air holes with the thickness of 0.5-1mm, so that the surface of the 800W high-power high-density bicolor light source can dissipate heat better.

The working principle of the utility model is approximately as follows: a red copper substrate with good heat dissipation performance is adopted as a heat dissipation substrate, a boss 7, a plurality of bonding pads 5 and a copper foil circuit 8 are etched on the heat dissipation substrate, a bracket made of aluminum nitride ceramics is matched, the surface of the aluminum nitride ceramics bracket 2 is subjected to gold plating treatment and is provided with an electric circuit 10, and then a die bonding area is surrounded by using enclosure glue to form a square retaining wall structure; the normal vertical structure wafer is adhered to the die bonding area of the bracket through high heat conduction nano silver paste or high heat conduction alloy die bonding, and a 12-string 5-parallel two-way independently driven circuit connection mode is used, wherein one of the two ways is 12-string 3-parallel, and the other way is 12-string 3-parallel, and die bonding is carried out. Then baking by a high-temperature oven or fixing the aluminum nitride ceramic support 2 to a die bonding area 12 under the protection of nitrogen atmosphere of a eutectic furnace; and then soldered from the surface of the wafer 3 to the ceramic support 2 by gold wires 13. Then, according to different customer demands, 2 wafers of 60 wafers 3, one of which is 36 and the other of which is 24 are respectively coated with fluorescent powder with corresponding colors, and the fluorescent powder is baked in an oven, then the aluminum nitride ceramic support 2 is welded on the boss 7 through high heat conduction solder paste in a reflow manner, and finally the lens 4 is covered, so that the 800W high-power high-density bicolor light source with complete design is formed.

Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims (4)

1. The utility model provides a 800W high-power high-density bicolor light source, a serial communication port, including red copper base plate (1), aluminium nitride ceramic support (2), sixty wafers (3) and lens (4), be equipped with copper foil circuit (8) in red copper base plate (1), the etching has boss (7) on red copper base plate (1), and pad (5), be equipped with the wire jumper that is used for realizing thermoelectric separation on red copper base plate (1), aluminium nitride ceramic support (2) openly and the back are connected through-hole copper post (11) and are switched on, be equipped with solid brilliant district (12) and electric circuit (10) on aluminium nitride ceramic support (2), wafer (3) enclose into square barricade structure through the enclosure glue, wafer (3) are through high heat conduction nanoscale silver thick liquid sintering or high heat conduction alloy adhesion on solid brilliant district (12), wafer (3) are welded on ceramic support (2) through gold wire (13), aluminium nitride ceramic support (2) reflow soldering is on boss (7), lens (4) are hugged closely and are covered in wafer (3) surface.

2. An 800W high power high density bi-color light source according to claim 1, wherein: sixty wafers (3) are independently driven in two paths, wherein one path is thirty-six wafers (3), the other path is twenty-four wafers (3), and the two paths of wafers (3) are respectively coated with fluorescent powder with different colors.

3. An 800W high power high density bi-color light source according to claim 1, wherein: the surfaces and the back surfaces of the boss (7), the bonding pad (5), the copper foil circuit (8) and the aluminum nitride ceramic support (2) are plated with nickel, palladium and gold.

4. An 800W high power high density bi-color light source according to claim 1, wherein: the wafer (3) is a wafer with a normal vertical structure.