KR100646155B1 - a LED module - Google Patents

a LED module Download PDF

Info

Publication number
KR100646155B1
KR100646155B1 KR1020050030975A KR20050030975A KR100646155B1 KR 100646155 B1 KR100646155 B1 KR 100646155B1 KR 1020050030975 A KR1020050030975 A KR 1020050030975A KR 20050030975 A KR20050030975 A KR 20050030975A KR 100646155 B1 KR100646155 B1 KR 100646155B1
Authority
KR
South Korea
Prior art keywords
reflectors
divided
light emitting
reflector
emitting diode
Prior art date
Application number
KR1020050030975A
Other languages
Korean (ko)
Other versions
KR20060108808A (en
Inventor
한규진
Original Assignee
주식회사 코스텍시스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코스텍시스 filed Critical 주식회사 코스텍시스
Priority to KR1020050030975A priority Critical patent/KR100646155B1/en
Publication of KR20060108808A publication Critical patent/KR20060108808A/en
Application granted granted Critical
Publication of KR100646155B1 publication Critical patent/KR100646155B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 발광다이오드 모듈에 관한 것으로서, 더욱 상세하게는 모듈을 구성하는 반사기가 절연체에 의하여 분할 형성되어 양측 반사기들이 기판에 형성된 접점에 각각 용접되어 별도의 전극단자들을 사용하지 않더라도 반사기들이 전극 역할을 대신하여 전체적인 발광다이오드 모듈의 구조를 간소화시킬 수 있도록 한 발명에 관한 것이다.The present invention relates to a light emitting diode module, and more particularly, a reflector constituting the module is divided by an insulator so that both reflectors are welded to contacts formed on the substrate, so that the reflectors serve as electrodes. Instead, the present invention relates to an invention to simplify the structure of the entire light emitting diode module.

전술한 본 발명은, 반사홈(11)이 형성된 절연체 케이스(10)의 바닥에는 구획편(12)들에 의하여 분할된 구멍(13)들이 각각 형성되고, 반사홈(11)의 내부에는 분할된 반사기(20)들이 각각 결합되어 구획편(12)에 의하여 서로 절연되며, 일측 반사기(20)에 고정된 LED(30)가 타측 반사기(20)와 와이어(31)로 연결되고, 반사기(20)들의 저면이 구멍(13)들을 통해 각각 노출되어 분할된 반사기(20)들이 각각 전극 역할을 할 수 있도록 한 것을 특징으로 하는 발광다이오드 모듈에 의하여 달성될 수 있는 것이다.In the above-described present invention, holes 13 divided by the partition pieces 12 are formed in the bottom of the insulator case 10 in which the reflection grooves 11 are formed, and the reflection grooves 11 are divided. The reflectors 20 are coupled to each other and insulated from each other by the partition piece 12, and the LED 30 fixed to the one reflector 20 is connected to the other reflector 20 and the wire 31, and the reflector 20 This is achieved by the light emitting diode module, characterized in that the bottom of the field is exposed through the holes 13 so that the divided reflectors 20 can each serve as electrodes.

Description

발광다이오드 모듈{a LED module}Light emitting diode module {a LED module}

도 1은 본 발명의 일실시예를 예시한 사시도,1 is a perspective view illustrating an embodiment of the present invention,

도 2는 본 발명의 일실시예를 예시한 분해 사시도,2 is an exploded perspective view illustrating an embodiment of the present invention;

도 3은 본 발명의 일실시예를 예시한 단면도,3 is a cross-sectional view illustrating an embodiment of the present invention;

도 4는 본 발명의 다른 실시예를 예시한 단면도.4 is a cross-sectional view illustrating another embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 모듈 10 : 케이스1: Module 10: Case

11 : 반사홈 12 : 구획편11: reflection groove 12: compartment

13 : 구멍 20 : 반사기13: hole 20: reflector

20a : 도금막 30 : LED20a: plating film 30: LED

31 : 와이어 32 : 용접소재31: wire 32: welding material

40 : 기판 41 : 접점40: substrate 41: contact

본 발명은 발광다이오드 모듈에 관한 것으로서, 더욱 상세하게는 모듈을 구성하는 반사기가 절연체에 의하여 분할 형성되어 양측 반사기들이 기판에 형성된 접점에 각각 용접되어 별도의 전극단자들을 사용하지 않더라도 반사기들이 전극 역할을 대신하여 전체적인 발광다이오드 모듈의 구조를 간소화시킬 수 있도록 한 발명에 관한 것이다.The present invention relates to a light emitting diode module, and more particularly, a reflector constituting the module is divided by an insulator so that both reflectors are welded to contacts formed on the substrate, so that the reflectors serve as electrodes. Instead, the present invention relates to an invention to simplify the structure of the entire light emitting diode module.

일반적으로 발광다이오드(LED : light emitting diode)는 반도체에 전압을 가할 때 생기는 전기 루미네선스(전기장발광)를 이용하여 발광효과를 얻도록 구성한 것으로서 현대에는 각종 조명장치, 표시소자, 전자기기의 표시용 램프, 숫자표시 장치 및 전광판 등에 널리 사용되고 있다.In general, a light emitting diode (LED) is configured to obtain a light emitting effect by using an electric luminescence (electric field emission) generated when a voltage is applied to a semiconductor. In modern times, a display of various lighting devices, display elements, and electronic devices It is widely used for lamps, numeric display devices and electronic displays.

상기 발광다이오드는 주로 세라믹 절연체에 고정된 반사기의 내부에 고정된 LED가 세라믹 절연체를 관통하는 음극 전극단자(-)에 용접된 상태에서 양극 전극단자(+)와 와이어로 연결되고, 절연체의 하부로 돌출되는 전극단자들은 기판의 접점에 용접되는 구성으로 되어 있다.The light emitting diode is mainly connected to the positive electrode terminal (+) and the wire while the LED fixed inside the reflector fixed to the ceramic insulator is welded to the negative electrode terminal (-) passing through the ceramic insulator, and to the lower part of the insulator. The protruding electrode terminals are constructed to be welded to the contacts of the substrate.

그러나, 전술한 바와 같이 전극단자들이 절연체를 관통하여 고정되는 경우에는 전체적인 모듈의 제작이 복잡하고 상당한 시간이 소요됨에 따라 제조원가가 상승되는 등의 폐단이 발생되었다.However, as described above, when the electrode terminals are fixed through the insulator, manufacturing of the entire module is complicated and a considerable time is required, resulting in an increase in manufacturing cost.

더욱이, 최근의 모듈들은 갈수록 소형화되는 추세이므로 2∼3mm의 크기를 갖는 모듈에 가는 전극단자들을 관통하여 결합시키는 작업이 매우 까다로울 뿐 아니라 많은 시간이 소요되어 결국 전극단자들의 사용이 모듈을 소형화에 결정적인 장애요인으로 작용되었다.Moreover, recent modules are becoming smaller and smaller, so it is not only difficult to connect the electrode terminals to the modules having a size of 2 to 3 mm, but also it takes a lot of time, so that the use of the electrode terminals is crucial to miniaturizing the module. It acted as a barrier.

본 발명은 상기한 문제점을 감안하여 창안한 것으로서, 그 목적은 모듈을 구성하는 반사기가 절연체에 의하여 분할 형성되어 양측 반사기들이 기판에 형성된 접점에 각각 용접되어 별도의 전극단자들을 사용하지 않더라도 반사기들이 전극 역할을 대신하여 전체적인 발광다이오드 모듈의 구조를 간소화시킬 수 있는 발광다이오드 모듈을 제공함에 있는 것이다.SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is that the reflectors constituting the module are divided by an insulator so that both reflectors are welded to the contacts formed on the substrate, so that the reflectors are electrodes without using separate electrode terminals. It is to provide a light emitting diode module that can simplify the structure of the overall light emitting diode module in place of the role.

상기한 목적을 달성하기 위한 본 발명의 특징은, 반사홈(11)이 형성된 절연체 케이스(10)의 바닥에는 구획편(12)들에 의하여 분할된 구멍(13)들이 각각 형성되고, 반사홈(11)의 내부에는 분할된 반사기(20)들이 각각 결합되어 구획편(12)에 의하여 서로 절연되며, 반사기(20)들의 저면이 구멍(13)들을 통해 각각 노출되어 분할된 반사기(20)들이 각각 전극 역할을 할 수 있도록 한 발광다이오드 모듈에 있어서, 상기 반사기(20)는 4조각으로 분할 형성되어 구획편(12)들에 의하여 각각 절연되고, 3개의 반사기(20)에 각각 고정된 LED(30)들이 나머지 한 개의 반사기(20)에 각각 와이어(31)로 연결되어 삼색(三色) 발광다이오드 모듈을 구성할 수 있도록 한 것을 특징으로 하는 발광다이오드 모듈에 의하여 달성될 수 있는 것이다.A feature of the present invention for achieving the above object is, the bottom of the insulator case 10 in which the reflection groove 11 is formed, the holes 13 divided by the partition pieces 12 are formed, respectively, the reflection groove ( 11, the divided reflectors 20 are coupled to each other and insulated from each other by the partition pieces 12, and the bottoms of the reflectors 20 are exposed through the holes 13, respectively, so that the divided reflectors 20 are respectively. In the light emitting diode module which can serve as an electrode, the reflector 20 is divided into four pieces and insulated by the partition pieces 12, respectively, and the LEDs 30 fixed to the three reflectors 20, respectively. ) Can be achieved by the light emitting diode module, characterized in that each of the other reflector 20 is connected to the wire 31 to form a tricolor light emitting diode module.

이하, 상기한 목적을 달성하기 위한 바람직한 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, described in detail by the accompanying drawings a preferred embodiment for achieving the above object is as follows.

도 1 내지는 도 3에서 도시한 바와 같이, 본 발명에 의한 모듈(1)은 절연체 케이스(10)와 분할 형성된 반사기(20)들로 구성되어 있다.As shown in Figures 1 to 3, the module 1 according to the present invention is composed of an insulator case 10 and a split reflector 20.

상기 케이스(10)는 내열성 플라스틱수지를 사출 성형하여 형성되며, 절연체 케이스(10)의 내부에는 위가 넓고 아래가 좁은 반사홈(11)이 형성되어 있다.The case 10 is formed by injection-molding a heat-resistant plastic resin, the inside of the insulator case 10 is formed with a reflective groove 11 having a wide top and a narrow bottom.

상기 반사홈(11)의 바닥에는 절연체 케이스(10)와 일체로 형성된 구획편(12)들에 의하여 양측으로 분할된 구멍(13)들이 각각 형성되어 있다.In the bottom of the reflecting groove 11, holes 13 divided in both sides by partition pieces 12 formed integrally with the insulator case 10 are formed.

상기 반사홈(11)의 내부에는 분할된 반사기(20)들이 각각 결합되어 있고, 반사기(20)들의 사이에는 반사홈(11)의 내부에서 돌출된 구획편(12)이 위치되어 양측 반사기(20)들이 서로 절연되어 있다.The reflectors 20 are respectively coupled to the inside of the reflecting groove 11, and the partition pieces 12 protruding from the inside of the reflecting groove 11 are positioned between the reflectors 20 so that both reflectors 20 are located. ) Are insulated from each other.

상기 반사기(20)는 열전도성이 양호한 동(銅) 재질의 금속으로 이루어지고 표면에는 은(銀) 도금막(20a)이 형성되어 효과적으로 LED(30)의 빛을 밝게 확산하여 반사시킬 수 있을 뿐 아니라 LED(30)에서 발산되는 열을 신속하게 전도하여 방출시킬 수 있도록 되어 있다.The reflector 20 is made of a copper metal having good thermal conductivity, and a silver plating film 20a is formed on the surface thereof, so that the light of the LED 30 can be effectively diffused and reflected. Rather, the heat emitted from the LED 30 can be quickly conducted and released.

상기 일측 반사기(20)의 바닥에는 LED(30)가 고정되어 있고, LED(30)는 타측 반사기(20)와 와이어(31)로 연결되어 전원을 인가 받을 수 있도록 구성되어 있다. LED 30 is fixed to the bottom of the one reflector 20, the LED 30 is configured to be connected to the other reflector 20 and the wire 31 to receive power.

상기 LED(30)는 합금으로 이루어진 도전성 용접소재(32)를 사용하여 용접하여 반사기(20)의 바닥에 고정시키거나, 에폭시수지와 같은 접착제에 의하여 접착되는 것이나 별도의 와이어 연결작업을 생략하기 위해서는 도전성 용접소재(32)를 사 용하는 것이 바람직하다.The LED 30 is welded using a conductive welding material 32 made of an alloy to be fixed to the bottom of the reflector 20, or to be bonded by an adhesive such as epoxy resin or to omit a separate wire connection work. It is preferable to use the conductive welding material 32.

상기 도전성 용접소재(32)는 저온의 열(200∼350℃)에 의하여 용융되는 금(Au) 75∼85％와 주석(Sn) 15∼25중량％를 주성분으로 하는 금속합금이거나, 760℃∼800℃의 온도에서 용융되는 은(Ag) 65∼75중량％와 동(Cu) 25∼35중량％를 주성분으로 하는 합금으로 구성되어 있다.The conductive welding material 32 is a metal alloy mainly composed of 75 to 85% of gold (Au) and 15 to 25% by weight of tin (Sn) melted by low temperature heat (200 to 350 ° C), or 760 ° C to It is comprised from the alloy which has 65-75 weight% of silver (Ag) and 25-35 weight% of copper (Cu) melt | dissolved at the temperature of 800 degreeC.

상기 반사기(20)들의 저면은 구멍(13)들을 통해 각각 노출되어 분할된 반사기(20)들이 각각 전극 역할을 할 수 있도록 구성되어 있다.The bottoms of the reflectors 20 are configured to be exposed through the holes 13 so that the divided reflectors 20 may serve as electrodes.

전술한 구성으로 이루어진 본 발명은 모듈(1)을 기판(40)위에 올려놓고 열을 가하면 절연체 케이스(10)의 하부로 노출된 양측 반사기(20)들의 저면이 기판(40)의 양측 접점(41)에 고정되어 접점(41)들을 통해 음극(-) 및 양극(+)의 전원이 각각 인가되어 LED(30)가 점등되는 것이므로 별도의 전극단자들을 사용하지 않더라도 반사기(20)들이 전극 역할을 대신하여 전체적인 발광다이오드 모듈(1)의 구조를 간소화시켜 생산성을 높여줄 수 있을 뿐 아니라 반사기(20)들이 전극과 일체화되어 전체적인 모듈(1)의 가격을 저렴하게 유지하면서도 소형화시킬 수 있는 등의 이점이 있는 것이다.According to the present invention having the above-described configuration, when the module 1 is placed on the substrate 40 and heated, the bottom surfaces of the both reflectors 20 exposed to the lower side of the insulator case 10 are exposed at both sides of the substrate 40. ) Is fixed to the power supply of the negative electrode (-) and the positive electrode (+) through the contacts 41 so that the LED 30 is turned on, so that the reflectors 20 take the role of electrodes even without using separate electrode terminals. By simplifying the overall structure of the light emitting diode module 1 to increase the productivity, the reflector 20 is integrated with the electrode and can be miniaturized while maintaining the price of the overall module 1 at low cost. It is.

또한, 반사기(20)들이 열전도성이 양호한 동(銅) 재질의 금속으로 구성되어 히트싱크 역할을 수행하는 것이므로 LED(30)의 점등에 의하여 발생되는 열을 신속하게 방출시켜 전기적 특성이 양호한 고효율의 발광다이오드 모듈을 구현할 수 있을 뿐 아니라 반사기(20)들은 은(銀) 도금되어 상당한 광택을 발산함에 따라 효과적으로 LED(30)의 빛을 밝게 확산하여 반사시킬 수 있는 것이다.In addition, since the reflectors 20 are made of a copper metal having good thermal conductivity to serve as a heat sink, the reflectors 20 quickly discharge heat generated by the lighting of the LED 30, thereby providing high efficiency with good electrical characteristics. In addition to implementing a light emitting diode module, the reflectors 20 may be silver plated to emit a significant luster, thereby effectively diffusing and reflecting the light of the LED 30.

한편, 상기 반사기(20)는 도 4에서 도시한 바와 같이, 4조각으로 분할 형성되어 구획편(12)들에 의하여 각각 절연되고, 3개의 반사기(20)에 각각 고정된 LED(30)들이 나머지 한 개의 반사기(20)에 각각 와이어(31)로 연결되어 삼색(三色) 발광다이오드 모듈을 구성할 수도 있는 것으로서 본 발명에서는 분할된 반사기(20)들의 수에 국한되는 것은 아니다.Meanwhile, as shown in FIG. 4, the reflector 20 is divided into four pieces and insulated by the partition pieces 12, respectively, and the LEDs 30 fixed to the three reflectors 20 remain. Each of the one reflector 20 may be connected to the wire 31 to form a tricolor light emitting diode module, and the present invention is not limited to the number of divided reflectors 20.

이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 또한 설명하였으나, 본 발명은 상기한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 기재된 청구범위 내에 있게 된다.Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and the present invention is not limited to the above-described embodiments without departing from the spirit of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such modifications are intended to fall within the scope of the appended claims.

이상에서 상술한 바와 같은 본 발명은, 모듈(1)을 기판(40)위에 올려놓고 열을 가하면 절연체 케이스(10)의 하부로 노출된 양측 반사기(20)들의 저면이 기판(40)의 양측 접점(41)에 고정되어 접점(41)들을 통해 음극(-) 및 양극(+)의 전원이 인가되어 LED(30)가 점등되는 것이므로 별도의 전극단자들을 사용하지 않더라도 반사기(20)들이 전극 역할을 대신하여 전체적인 발광다이오드 모듈(1)의 구조를 간소화시켜 생산성을 높여줄 수 있을 뿐 아니라 반사기(20)들이 전극과 일체화되어 전체적인 모듈(1)의 가격을 저렴하게 유지할 수 있으면서도 소형화시킬 수 있는 것으로서 모듈의 대외 경쟁력을 최대한 높여줄 수 있는 등의 이점이 있는 것이다.According to the present invention as described above, when the module 1 is placed on the substrate 40 and heated, the bottom surfaces of the two reflectors 20 exposed to the lower part of the insulator case 10 may be contacted at both sides of the substrate 40. It is fixed to the (41) and the power of the negative (-) and the positive (+) is applied through the contacts 41, so that the LED 30 is turned on, so that the reflectors 20 serve as electrodes even without using separate electrode terminals. Instead, the structure of the overall light emitting diode module 1 can be simplified to increase productivity, and the reflectors 20 can be integrated with the electrodes, thereby minimizing the size of the module 1 while maintaining the price of the overall module 1 at low cost. There is an advantage such as to maximize the external competitiveness of the company.

Claims (2)

삭제delete 반사홈(11)이 형성된 절연체 케이스(10)의 바닥에는 구획편(12)들에 의하여 분할된 구멍(13)들이 각각 형성되고, 반사홈(11)의 내부에는 분할된 반사기(20)들이 각각 결합되어 구획편(12)에 의하여 서로 절연되며, 반사기(20)들의 저면이 구멍(13)들을 통해 각각 노출되어 분할된 반사기(20)들이 각각 전극 역할을 할 수 있도록 한 발광다이오드 모듈에 있어서,Holes 13 divided by the partition pieces 12 are formed in the bottom of the insulator case 10 in which the reflecting grooves 11 are formed, and the reflectors 20 divided in the reflecting grooves 11 are respectively formed. In the light emitting diode module coupled and insulated from each other by the partition piece 12, the bottom surface of the reflectors 20 are exposed through the holes 13 so that the divided reflectors 20 can each serve as an electrode, 상기 반사기(20)는 4조각으로 분할 형성되어 구획편(12)들에 의하여 각각 절연되고, 3개의 반사기(20)에 각각 고정된 LED(30)들이 나머지 한 개의 반사기(20)에 각각 와이어(31)로 연결되어 삼색(三色) 발광다이오드 모듈을 구성할 수 있도록 한 것을 특징으로 하는 발광다이오드 모듈.The reflector 20 is divided into four pieces and insulated by the partition pieces 12, and the LEDs 30 fixed to the three reflectors 20 are respectively wired to the other reflector 20. 31) is a light emitting diode module characterized in that to configure the tri-color (LED) light emitting diode module.
KR1020050030975A 2005-04-14 2005-04-14 a LED module KR100646155B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020050030975A KR100646155B1 (en) 2005-04-14 2005-04-14 a LED module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050030975A KR100646155B1 (en) 2005-04-14 2005-04-14 a LED module

Publications (2)

Publication Number Publication Date
KR20060108808A KR20060108808A (en) 2006-10-18
KR100646155B1 true KR100646155B1 (en) 2006-11-14

Family

ID=37628368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050030975A KR100646155B1 (en) 2005-04-14 2005-04-14 a LED module

Country Status (1)

Country Link
KR (1) KR100646155B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4930548B2 (en) * 2009-06-08 2012-05-16 サンケン電気株式会社 Light emitting device and manufacturing method thereof
KR101541035B1 (en) * 2013-08-16 2015-08-03 (주)포인트엔지니어링 Chip substrate for preventing burr generating and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163381A (en) 2001-11-26 2003-06-06 Citizen Electronics Co Ltd Surface mount light emitting diode and its manufacturing method
JP2004031708A (en) 2002-06-26 2004-01-29 Citizen Electronics Co Ltd Semiconductor laser package
JP2004335740A (en) 2003-05-07 2004-11-25 Citizen Electronics Co Ltd Light emitting diode and its package structure
KR20050029384A (en) * 2003-09-22 2005-03-28 엘지이노텍 주식회사 Light emitting diode package and method for manufacturing light emitting diode package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163381A (en) 2001-11-26 2003-06-06 Citizen Electronics Co Ltd Surface mount light emitting diode and its manufacturing method
JP2004031708A (en) 2002-06-26 2004-01-29 Citizen Electronics Co Ltd Semiconductor laser package
JP2004335740A (en) 2003-05-07 2004-11-25 Citizen Electronics Co Ltd Light emitting diode and its package structure
KR20050029384A (en) * 2003-09-22 2005-03-28 엘지이노텍 주식회사 Light emitting diode package and method for manufacturing light emitting diode package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
16031708

Also Published As

Publication number Publication date
KR20060108808A (en) 2006-10-18

Similar Documents

Publication Publication Date Title
US5119174A (en) Light emitting diode display with PCB base
JP5846408B2 (en) Light emitting device and lighting device
US7642704B2 (en) Light-emitting diode with a base
TWI414095B (en) Led unit and led illuminating lamp using such led unit
US8598601B2 (en) Light emitting package
JP2004356506A (en) Glass sealed type light emitting diode
EP3343098B1 (en) Led lamp with heat dissipation effect
CN109237319B (en) Bonding LED die to leadframe strip
US8476656B2 (en) Light-emitting diode
KR100646155B1 (en) a LED module
KR100615404B1 (en) a LED module
KR100592333B1 (en) A led module
KR101099494B1 (en) Light emitting diode package
JP2006013237A (en) Light emitting device
US20120267645A1 (en) Light emitting diode module package structure
KR20060053468A (en) Led package having multitude led
KR100592328B1 (en) Method of manufacturing light emitting diode module and light emitting diode module
CN106369366B (en) LED filament assembly and LED filament lamp
KR100582017B1 (en) a LED module for electric news tape
CN219873531U (en) 800W high-power high-density bicolor light source
TWI523271B (en) Plug-in light-emitting unit and light-emitting device
KR101159781B1 (en) Led module and lighting apparatus having the same
CN210467831U (en) Laser LED light source SMD packaging structure
CN220934114U (en) High-power high-density color mixing light source
TWI753673B (en) High-power light source package structure and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121210

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20131108

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20150205

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee