CN213124486U - Diamond film heat radiation structure for heat radiation of silicon wafer - Google Patents
Diamond film heat radiation structure for heat radiation of silicon wafer Download PDFInfo
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- CN213124486U CN213124486U CN202022082889.6U CN202022082889U CN213124486U CN 213124486 U CN213124486 U CN 213124486U CN 202022082889 U CN202022082889 U CN 202022082889U CN 213124486 U CN213124486 U CN 213124486U
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- diamond film
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- monocrystalline silicon
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- conducting layer
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Abstract
The utility model relates to a heat radiation structure technical field specifically is a be used for radiating diamond film heat radiation structure of silicon chip, including the PCB board, the middle part on PCB board surface is equipped with monocrystalline silicon piece, and monocrystalline silicon piece's surface bonds and has the insulating layer, and the surface of insulating layer bonds and has the metal conducting layer, and the surperficial electric connection of metal conducting layer has a plurality of LED chips that are the matrix and arrange, and the outside of metal conducting layer is equipped with diamond film assembly, and diamond film assembly includes diamond film board and frame shape diamond film. This a diamond film heat radiation structure for silicon chip radiating constitutes the silicon substrate through monocrystalline silicon piece, insulating layer and metal conducting layer for install the LED chip, improves the heat derivation efficiency of LED chip part through diamond film board, derives the heat of monocrystalline silicon piece, insulating layer and metal conducting layer transmission through frame shape diamond film, improves the heat derivation rate of monocrystalline silicon piece.
Description
Technical Field
The utility model relates to a heat radiation structure technical field specifically is a be used for radiating diamond film heat radiation structure of silicon chip.
Background
The LED lamp has the advantages of small volume and compact structure, can be embedded into various lamps to form application systems meeting different requirements, wherein a high-power white light LED is a novel semiconductor solid light source, the lighting effect is good, but the heat emitted by an LED chip can be increased along with the increase of the power of the LED, the existing LED chip mainly grows an LED on a sapphire substrate and is connected with the silicon substrate, the LED chip is radiated by a monocrystalline silicon wafer in the silicon substrate, but the heat conductivity of the monocrystalline silicon wafer in the high-power LED is not ideal, and when the high-power LED chip works for a long time, the temperature of the LED chip is easily increased, so that the performance of the LED is reduced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a be used for radiating diamond film heat radiation structure of silicon chip to propose in solving above-mentioned background art because monocrystalline silicon piece heat conductivility itself is not too good, high-power LED chip rises at long-time work back temperature, leads to the problem that the LED performance reduces easily.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a be used for radiating diamond film heat radiation structure of silicon chip, includes the PCB board, the middle part on PCB board surface is equipped with monocrystalline silicon piece, monocrystalline silicon piece's surface bonds and has the insulating layer, the surface bonding of insulating layer has the metallic conduction layer, the surperficial electric connection of metallic conduction layer has a plurality of LED chips that are the matrix and arrange, and control the P type wiring end and the N type wiring end of LED chip electric current are installed on the both sides of insulating layer and through the electrode line and the PCB board electric connection that correspond, the outside of metallic conduction layer is equipped with diamond membrane module, diamond membrane module includes diamond film board and frame shape diamond film, the surface of PCB board and the position electric connection who is close to a side reason have temperature sensor.
Preferably, the detection portion of the temperature sensor is bonded to a side surface of the frame-shaped diamond film.
Preferably, the inner wall of the frame-shaped diamond film is respectively attached to the outer sides of the monocrystalline silicon wafer, the insulating layer and the metal conductive layer.
Preferably, the surface of the diamond film plate is provided with rectangular mounting holes corresponding to the positions of the plurality of LED chips, and the thickness of the diamond film plate is smaller than that of the LED chips.
Preferably, the two sides of the frame-shaped diamond film and the positions close to the front side are provided with symmetrically distributed mounting through holes, and the inner diameters of the two mounting through holes are respectively matched with the outer diameters of the P-type wiring end and the N-type wiring end.
Preferably, the bottom surface of the diamond film plate is completely attached to the surface of the metal conductive layer.
Compared with the prior art, the beneficial effects of the utility model are that:
this a diamond film heat radiation structure for silicon chip radiating, through monocrystalline silicon piece, insulating layer and metal conducting layer constitute the silicon substrate, be used for installing the LED chip, improve the heat derivation efficiency of LED chip part through diamond film board, through the heat derivation of frame shape diamond film with monocrystalline silicon piece, insulating layer and metal conducting layer transmission, improve monocrystalline silicon piece's heat derivation rate, and carry out real-time detection through temperature sensor, when the temperature of frame shape diamond film is higher, it has been shown that the heat that the LED chip produced can not in time be dispelled by diamond film board and monocrystalline silicon piece, thereby control the input current of LED chip through the PCB board and reduce LED's power, play the guard action to the LED chip.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is a schematic view of the present invention in an exploded view of the whole part of fig. 1;
fig. 3 is a schematic structural diagram of a diamond film assembly according to the present invention.
In the figure: the LED module comprises a PCB (printed Circuit Board) 1, a monocrystalline silicon wafer 2, an insulating layer 3, a metal conducting layer 4, an LED chip 5, a temperature sensor 6, a diamond film component 7, a diamond film plate 70, a rectangular mounting hole 700, a frame-shaped diamond film 71, a mounting through hole 710, a P-type terminal 8, an N-type terminal 9 and an electrode wire 10.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Referring to fig. 1-3, the present invention provides a technical solution:
a diamond film heat radiation structure for silicon chip heat radiation comprises a PCB (printed circuit board) 1, wherein a monocrystalline silicon chip 2 is arranged in the middle of the surface of the PCB 1, the monocrystalline silicon chip 2 plays a role in heat conduction on LED chips 5, an insulating layer 3 is adhered to the surface of the monocrystalline silicon chip 2, the insulating layer 3 needs to be made of insulating heat-conducting materials, the metal conducting layer 4 can be prevented from influencing the PCB 1 while heat conduction is achieved, a metal conducting layer 4 is adhered to the surface of the insulating layer 3, a plurality of LED chips 5 arranged in a matrix form are electrically connected to the surface of the metal conducting layer 4, a P-type wiring terminal 8 and an N-type wiring terminal 9 for controlling the current of the LED chips 5 are arranged on two sides of the insulating layer 3 and are electrically connected with the PCB 1 through corresponding electrode wires 10, the input current of the LED lamp bank is controlled through the PCB 1, so that the total power of the LED lamp bank is reduced, the LED chips 5 are protected, the heat dissipation efficiency of the LED chip 5 and the monocrystalline silicon piece 2 is improved through the diamond film assembly 7, the diamond film assembly 7 comprises a diamond film plate 70 and a frame-shaped diamond film 71, the position on the surface of the PCB 1, which is close to one side edge, is electrically connected with a temperature sensor 6, and the temperature of the frame-shaped diamond film 71 is detected.
In this embodiment, the detecting portion of the temperature sensor 6 is attached to the side surface of the frame-shaped diamond film 71, so as to ensure real-time detection of the temperature of the frame-shaped diamond film 71, and facilitate the PCB board 1 to reduce the total power of the LED lamp set in time.
Specifically, the inner wall of the frame-shaped diamond film 71 is respectively attached to the outer sides of the monocrystalline silicon wafer 2, the insulating layer 3 and the metal conductive layer 4, so that heat conducted from the bottom of the LED chip 5 can be quickly conducted out from the monocrystalline silicon wafer 2.
Further, the surface of the diamond film plate 70 is provided with rectangular mounting holes 700 corresponding to the positions of the plurality of LED chips 5, and the thickness of the diamond film plate 70 is smaller than that of the LED chips 5, so as to avoid affecting the light source of the LED.
Furthermore, the two sides of the frame-shaped diamond film 71 and the positions close to the front side are provided with symmetrically distributed mounting through holes 710, and the inner diameters of the two mounting through holes 710 are respectively matched with the outer diameters of the P-type terminal 8 and the N-type terminal 9, so that the positions of the terminals are fixed.
In addition, the bottom surface of the diamond film plate 70 completely adheres to the surface of the metal conductive layer 4, so that the diamond film plate 70 can rapidly conduct heat emitted from the LED chip 5.
When the diamond film heat dissipation structure for silicon wafer heat dissipation of the embodiment is used, when the high-power LED lamp group works, most of heat generated by the LED chip 5 is LED out under the action of the diamond film plate 70, the rest heat enters the monocrystalline silicon wafer 2 through the insulating layer 3, and finally the heat of the monocrystalline silicon wafer 2 is LED out quickly through the frame-shaped diamond film 71, so that the heat dissipation efficiency of the monocrystalline silicon wafer 2 is improved; when the high-power LED lamp group works for a long time, because the heat dissipation speed of the diamond film plate 70 and the frame-shaped diamond film 71 is not timely caused by external factors, the temperature sensor 6 can timely detect the temperature change of the frame-shaped diamond film 71, when the temperature of the frame-shaped diamond film 71 is overhigh, the temperature sensor 6 inputs a signal into the PCB 1 and controls the input current of the LED lamp group through the PCB 1, so that the total power of the LED lamp group is reduced, and the LED chip 5 is protected.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A diamond film heat radiation structure for radiating silicon chips is characterized in that: comprises a PCB (1), a monocrystalline silicon wafer (2) is arranged in the middle of the surface of the PCB (1), an insulating layer (3) is bonded on the surface of the monocrystalline silicon piece (2), a metal conducting layer (4) is bonded on the surface of the insulating layer (3), the surface of the metal conducting layer (4) is electrically connected with a plurality of LED chips (5) which are arranged in a matrix form, and a P-type terminal (8) and an N-type terminal (9) for controlling the current of the LED chip (5) are installed on both sides of the insulation layer (3) and electrically connected with the PCB (1) through corresponding electrode wires (10), a diamond membrane component (7) is arranged on the outer side of the metal conducting layer (4), the diamond membrane component (7) comprises a diamond film plate (70) and a frame-shaped diamond membrane (71), the surface of the PCB (1) and the position close to one side edge are electrically connected with a temperature sensor (6).
2. The diamond film heat dissipation structure for silicon chip heat dissipation of claim 1, wherein: the detection portion of the temperature sensor (6) is bonded to the side surface of the frame-shaped diamond film (71).
3. The diamond film heat dissipation structure for silicon chip heat dissipation of claim 1, wherein: the inner wall of the frame-shaped diamond film (71) is respectively attached to the outer sides of the monocrystalline silicon wafer (2), the insulating layer (3) and the metal conducting layer (4).
4. The diamond film heat dissipation structure for silicon chip heat dissipation of claim 1, wherein: the surface of the diamond film plate (70) is provided with rectangular mounting holes (700) corresponding to the positions of the LED chips (5), and the thickness of the diamond film plate (70) is smaller than that of the LED chips (5).
5. The diamond film heat dissipation structure for silicon chip heat dissipation of claim 1, wherein: and symmetrically distributed mounting through holes (710) are formed in positions, close to the front side, of two sides of the frame-shaped diamond film (71), and the inner diameters of the two mounting through holes (710) are matched with the outer diameters of the P-type wiring terminal (8) and the N-type wiring terminal (9) respectively.
6. The diamond film heat dissipation structure for silicon chip heat dissipation of claim 1, wherein: the bottom surface of the diamond film plate (70) is completely attached to the surface of the metal conductive layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022082889.6U CN213124486U (en) | 2020-09-22 | 2020-09-22 | Diamond film heat radiation structure for heat radiation of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022082889.6U CN213124486U (en) | 2020-09-22 | 2020-09-22 | Diamond film heat radiation structure for heat radiation of silicon wafer |
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| Publication Number | Publication Date |
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| CN213124486U true CN213124486U (en) | 2021-05-04 |
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| CN202022082889.6U Active CN213124486U (en) | 2020-09-22 | 2020-09-22 | Diamond film heat radiation structure for heat radiation of silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114977374A (en) * | 2022-04-12 | 2022-08-30 | 安徽奥源电子科技有限公司 | Bridgeless PFC switching power supply circuit |
-
2020
- 2020-09-22 CN CN202022082889.6U patent/CN213124486U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114977374A (en) * | 2022-04-12 | 2022-08-30 | 安徽奥源电子科技有限公司 | Bridgeless PFC switching power supply circuit |
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Address after: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee after: Zhejiang Haina Semiconductor Co.,Ltd. Patentee after: JIANG University OF TECHNOLOGY Address before: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee before: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. Patentee before: JIANG University OF TECHNOLOGY |
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| CP01 | Change in the name or title of a patent holder |