CN219670640U - Microwave plasma chemical vapor deposition device - Google Patents
Microwave plasma chemical vapor deposition device Download PDFInfo
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- CN219670640U CN219670640U CN202320297165.4U CN202320297165U CN219670640U CN 219670640 U CN219670640 U CN 219670640U CN 202320297165 U CN202320297165 U CN 202320297165U CN 219670640 U CN219670640 U CN 219670640U
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- box body
- reaction
- vapor deposition
- chemical vapor
- microwave
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 32
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 66
- 238000003860 storage Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 4
- 239000010432 diamond Substances 0.000 abstract description 46
- 229910003460 diamond Inorganic materials 0.000 abstract description 46
- 238000000034 method Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000498 cooling water Substances 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Abstract
The utility model discloses a microwave plasma chemical vapor deposition device, which comprises a lower box body and a chemical vapor deposition mechanism, wherein the lower box body is provided with: the upper end of the upper box body is provided with an upper box body, the front end of the upper box body is provided with a single chip microcomputer, the front end of the upper box body is uniformly provided with control buttons, the input end of the single chip microcomputer is electrically connected with an external power supply, and the output ends of the control buttons are electrically connected with the output end of the single chip microcomputer; chemical vapor deposition mechanism: the microwave plasma chemical vapor deposition device comprises a reaction cover, a microwave generator, a waveguide and a microwave quartz window, wherein the reaction cover is arranged at the left end of an upper box body through a hoop, the microwave generator is arranged in the upper box body, and the microwave plasma chemical vapor deposition device is convenient to adjust the height of a base in the growth process of a diamond film, so that a growth mould does not need to be replaced in the growth process of the diamond film, the quality of the diamond film is improved, the production efficiency is improved, the use is convenient, and the application range is wider.
Description
Technical Field
The utility model relates to the technical field of chemical vapor deposition, in particular to a microwave plasma chemical vapor deposition device.
Background
Microwave Plasma Chemical Vapor Deposition (MPCVD) is currently accepted as the optimal method for preparing diamond materials, and the diamond synthesized by the method has the characteristics of large granularity, large size, high purity and the like. The conventional diamond growth sample stage is fixed, and in the process of growing thicker monocrystal or polycrystal diamond, as the thickness increases, the distance between the surface of the diamond and plasma is closer and closer, so that the growth temperature is higher and higher, the microwave input power or cavity pressure is required to be reduced to maintain the growth temperature, the reduction of the microwave power can cause the reduction of the growth rate, which is disadvantageous to the production, so that the diamond growth needs to be interrupted after growing to a certain thickness, the diamond is processed and then placed into a deeper growth mould, so that the proper growth temperature under high power is achieved, and the repeated growth greatly increases the pollution probability of the surface of the diamond and reduces the production efficiency.
Disclosure of Invention
The utility model aims to overcome the existing defects, and provides the microwave plasma chemical vapor deposition device which is convenient for adjusting the height of the base in the growth process of the diamond film, so that a growth mould does not need to be replaced in the growth process of the diamond film, the quality of the diamond film is improved, the production efficiency is improved, and the problems in the background technology can be effectively solved.
In order to achieve the above purpose, the present utility model provides the following technical solutions: a microwave plasma chemical vapor deposition device comprises a lower box body and a chemical vapor deposition mechanism;
lower box: the upper end of the upper box body is provided with an upper box body, the front end of the upper box body is provided with a single chip microcomputer, the front end of the upper box body is uniformly provided with control buttons, the input end of the single chip microcomputer is electrically connected with an external power supply, and the output ends of the control buttons are electrically connected with the output end of the single chip microcomputer;
chemical vapor deposition mechanism: the novel diamond film growth device comprises a reaction cover, a microwave generator, a waveguide and a microwave quartz window, wherein the reaction cover is arranged at the left end of an upper box body through a hoop, the microwave generator is arranged in the upper box body, a microwave output port of the microwave generator is communicated with the reaction cover through the waveguide, the microwave quartz window is arranged on the upper side of the interior of the reaction cover, the input end of the microwave generator is electrically connected with the output end of a singlechip, an air inlet pipeline is arranged on the outer cambered surface of the reaction cover, the height of a base in the growth process of a diamond film is convenient to adjust, a growth die does not need to be replaced in the growth process of the diamond film, the quality of the diamond film is improved, the production efficiency is improved, the use is convenient, and the application range is wider.
Further, it is characterized in that: the chemical vapor deposition mechanism further comprises a bottom plate, guide posts, reaction seats, a substrate table and plasma balls, wherein the bottom plate is arranged at the left end of the lower box body, the guide posts are symmetrically arranged at the upper end of the bottom plate, the reaction seats are connected between the two guide posts in a sliding mode, the reaction seats are installed in a matched mode with the reaction cover, the substrate table is arranged on the bottom wall of the reaction seat, the plasma balls are arranged in the reaction cover through connecting rods, and diamond films can be generated.
Further, the upper end of bottom plate is connected with the lead screw through the bearing rotation, and the extrados upside and the inside screw hole threaded connection of reaction seat of lead screw, the lower extreme of bottom plate is provided with the motor, and the output shaft upper end and the lower extreme fixed connection of lead screw of motor, the output of singlechip is connected to the input electricity of motor, can adjust the height of diamond film growth in-process substrate platform.
Furthermore, the water cooling channel is arranged in the reaction seat, and the lower end of the reaction seat is respectively provided with a water inlet pipe and a water outlet pipe which are communicated with the water cooling channel, so that the reaction seat can be cooled by water.
Further, the inside of lower box is provided with the storage water tank, and the inside of storage water tank is provided with the water pump, and the play water end of water pump is linked together with the inlet tube through communicating pipe one, and the outlet pipe is linked together with the storage water tank through communicating pipe two, and the output of singlechip can be cyclic utilization to the cooling water is connected to the input electricity of water pump.
Further, the extrados of reaction cover is provided with the observation pipeline, and the one end that the observation pipeline kept away from the reaction cover center is provided with glass observation window, is convenient for observe the growth rate of diamond film.
Further, the lower extreme of lower box evenly is provided with the landing leg, can support this device.
Compared with the prior art, the utility model has the beneficial effects that: the microwave plasma chemical vapor deposition device has the following advantages:
1. the thickness of the diamond film is observed through the glass observation window, the motor starts to operate through the singlechip, the output shaft of the motor drives the screw rod to start to operate, and the screw rod can drive the reaction seat to move up and down under the limiting action of the guide post, so that the height of the reaction seat is adjusted according to the growth thickness of the diamond film, the inner space of the reaction cover is matched with the growth speed of the diamond film, the growth mould does not need to be replaced in the growth process of the diamond film, the pollution probability of the diamond film is reduced, and the quality of the diamond film is improved.
2. In the preparation process, the water pump starts to operate through the singlechip, the water pump conveys cooling water in the water storage tank to the inside of the water cooling channel through the first communicating pipe, then the cooling water takes heat in the substrate table and then flows back to the water storage tank through the second communicating pipe, water cooling and heat dissipation can be carried out on the substrate table, the growth quality of the diamond film is ensured, the cooling water can be recycled, energy sources are saved, and the use is convenient.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a schematic view of the internal cross-sectional structure of the present utility model;
fig. 3 is an enlarged schematic view of the structure of the present utility model at a.
In the figure: the device comprises a lower box body 1, an upper box body 2, a single chip microcomputer 3, a control button 4, a chemical vapor deposition mechanism 5, a reaction cover 51, a microwave generator 52, a waveguide 53, a microwave quartz window 54, a bottom plate 55, a guide column 56, a reaction seat 57, a substrate table 58, a plasma ball 59, a screw rod 6, a motor 7, a water cooling channel 8, a water inlet pipe 9, a water outlet pipe 10, a water storage tank 11, a water pump 12, a first communicating pipe 13, a second communicating pipe 14, an observation pipeline 15, a glass observation window 16 and a supporting leg 17.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-3, the present embodiment provides a technical solution: a microwave plasma chemical vapor deposition device comprises a lower box body 1 and a chemical vapor deposition mechanism 5;
lower box 1: the upper end of the upper box body is provided with an upper box body 2, the front end of the upper box body 2 is provided with a single chip microcomputer 3, the front end of the upper box body 2 is uniformly provided with a control button 4, the input end of the single chip microcomputer 3 is electrically connected with an external power supply, the output ends of the control button 4 are electrically connected with the output end of the single chip microcomputer 3, and the lower end of the lower box body 1 is uniformly provided with supporting legs 17;
chemical vapor deposition mechanism 5: the chemical vapor deposition mechanism 5 further comprises a bottom plate 55, guide posts 56, a reaction seat 57, a substrate table 58 and a plasma ball 59, wherein the reaction cover 51 is arranged at the left end of the upper box body 2 through a hoop, the microwave generator 52 is arranged in the upper box body 2, a microwave output port of the microwave generator 52 is communicated with the reaction cover 51 through the waveguide 53, the microwave quartz window 54 is arranged on the upper side of the inside of the reaction cover 51, the input end of the microwave generator 52 is electrically connected with the output end of the singlechip 3, the outer cambered surface of the reaction cover 51 is provided with an air inlet pipeline, the bottom plate 55 is symmetrically provided with the guide posts 56, the reaction seat 57 is connected between the two guide posts 56 in a sliding way, the reaction seat 57 is matched with the reaction cover 51, the bottom wall of the reaction seat 57 is provided with the substrate table 58, the inside of the reaction cover 51 is provided with a plasma ball 59 through a connecting rod, the upper end of the bottom plate 55 is rotationally connected with a screw rod 6 through a bearing, the upper side of the outer cambered surface of the screw rod 6 is in threaded connection with a threaded hole in the reaction seat 57, the lower end of the bottom plate 55 is provided with a motor 7, the upper end of an output shaft of the motor 7 is fixedly connected with the lower end of the screw rod 6, the input end of the motor 7 is electrically connected with the output end of the singlechip 3, the outer cambered surface of the reaction cover 51 is provided with an observation pipeline 15, one end of the observation pipeline 15 far away from the center of the reaction cover 51 is provided with a glass observation window 16, when a diamond film needs to be prepared, the singlechip 3 is controlled by a control button 4 to start running a microwave generator 52, microwaves generated by the microwave generator 52 are transmitted into the reaction cover 51 through a waveguide 53, hydrogen and methane are introduced into the reaction cover 51 through an air inlet pipeline, the reaction speed of the hydrogen, methane and the plasma ball 59 is accelerated, the diamond film can be deposited at the upper end of the substrate table 58, so that the preparation work of the diamond film is carried out, in the production process, the generation thickness of the diamond film is observed through the glass observation window 16, the motor 7 starts to operate through the singlechip 3, the output shaft of the motor 7 drives the screw rod 6 to start to operate, the screw rod 6 can drive the reaction seat 57 to move up and down under the limit action of the guide post 56, the height of the reaction seat 57 is adjusted according to the growth thickness of the diamond film, the inner space of the reaction cover 51 is matched with the growth speed of the diamond film, the growth mould does not need to be replaced in the growth process of the diamond film, and the quality of the diamond film is improved;
wherein: the water cooling channel 8 is arranged in the reaction seat 57, the water inlet pipe 9 and the water outlet pipe 10 which are communicated with the water cooling channel 8 are respectively arranged at the lower end of the reaction seat 57, the water storage tank 11 is arranged in the lower box body 1, the water pump 12 is arranged in the water storage tank 11, the water outlet end of the water pump 12 is communicated with the water inlet pipe 9 through the first communicating pipe 13, the water outlet pipe 10 is communicated with the water storage tank 11 through the second communicating pipe 14, the input end of the water pump 12 is electrically connected with the output end of the singlechip 3, the water pump 12 starts to operate through the singlechip 3 in the preparation process, the water pump 12 conveys cooling water in the water storage tank 11 to the water cooling channel 8 through the first communicating pipe 13, then the cooling water flows back to the water storage tank 11 through the second communicating pipe 14 after taking away heat in the substrate table 58, the water cooling heat dissipation can be performed on the substrate table 58, the growth quality of diamond films is ensured, the cooling water can be recycled, the energy is saved, and the use is convenient.
The working principle of the microwave plasma chemical vapor deposition device provided by the utility model is as follows: when the diamond film needs to be prepared, the control button 4 controls the singlechip 3 to start to operate, microwaves generated by the microwave generator 52 are transmitted to the inside of the reaction cover 51 through the waveguide 53, hydrogen and methane are introduced into the inside of the reaction cover 51 through the air inlet pipeline, the reaction speed of the hydrogen, the methane and the plasma ball 59 is accelerated under the irradiation of the microwaves, the diamond film can be deposited at the upper end of the substrate table 58, thereby the preparation work of the diamond film is carried out, in the process of generating, the generation thickness of the diamond film is observed through the glass observation window 16, the motor 7 starts to operate through the singlechip 3, the output shaft of the motor 7 drives the lead screw 6 to start to operate, the lead screw 6 can drive the reaction seat 57 to move up and down under the limiting action of the guide post 56, thereby the height of the reaction seat 57 is adjusted according to the growth thickness of the diamond film, the inner space of the reaction cover 51 is matched with the growth speed of the diamond film, the quality of the diamond film is not required to be changed in the growth process of the diamond film, the quality of the diamond film is improved, the singlechip 3 starts to operate the water pump 12, the water pump 12 conveys cooling water inside 11 to the water inside the water storage tank 13 through the first water cooling channel 8 and then the water cooling water channel 58 is cooled down through the water cooling water channel, the water storage tank 58 can be cooled down, the water storage tank is cooled by the water, and the water can be cooled by the water storage tank and the water storage tank is cooled by the water after the water is cooled by the water channel and the water storage tank is cooled by the water.
It should be noted that the singlechip 3 disclosed in the above embodiment may be S7-1200, the microwave generator 52 may be SMF-B22, the motor 7 may be 6IK200RGU-CF, and the singlechip 3 controls the operation of the microwave generator 52 and the motor 7 by methods commonly used in the prior art.
The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.
Claims (7)
1. A microwave plasma chemical vapor deposition device, characterized in that: comprises a lower box body (1) and a chemical vapor deposition mechanism (5);
lower box (1): the upper end of the box body is provided with an upper box body (2), the front end of the upper box body (2) is provided with a single chip microcomputer (3), the front end of the upper box body (2) is uniformly provided with control buttons (4), the input end of the single chip microcomputer (3) is electrically connected with an external power supply, and the output ends of the control buttons (4) are electrically connected with the output end of the single chip microcomputer (3);
chemical vapor deposition mechanism (5): the microwave oven comprises a reaction cover (51), a microwave generator (52), a waveguide (53) and a microwave quartz window (54), wherein the reaction cover (51) is arranged at the left end of an upper box body (2) through a hoop, the microwave generator (52) is arranged in the upper box body (2), a microwave output port of the microwave generator (52) is communicated with the reaction cover (51) through the waveguide (53), the microwave quartz window (54) is arranged at the upper side of the interior of the reaction cover (51), the input end of the microwave generator (52) is electrically connected with the output end of a single chip microcomputer (3), and an extrados surface of the reaction cover (51) is provided with an air inlet pipeline.
2. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein: the chemical vapor deposition mechanism (5) further comprises a bottom plate (55), guide posts (56), reaction seats (57), a substrate table (58) and plasma balls (59), the bottom plate (55) is arranged at the left end of the lower box body (1), the guide posts (56) are symmetrically arranged at the upper end of the bottom plate (55), the reaction seats (57) are connected between the two guide posts (56) in a sliding mode, the reaction seats (57) are installed in a matched mode with the reaction covers (51), the substrate table (58) is arranged on the bottom wall of the reaction seats (57), and the plasma balls (59) are arranged in the reaction covers (51) through connecting rods.
3. A microwave plasma chemical vapor deposition apparatus according to claim 2, wherein: the upper end of bottom plate (55) is connected with lead screw (6) through the bearing rotation, and the intrados upside of lead screw (6) and the screw hole threaded connection of reaction seat (57) are inside, and the lower extreme of bottom plate (55) is provided with motor (7), and the output of motor (7) upper end and the lower extreme fixed connection of lead screw (6), the output of singlechip (3) is connected to the input electricity of motor (7).
4. A microwave plasma chemical vapor deposition apparatus according to claim 2, wherein: the inside of reaction seat (57) has seted up water-cooling passageway (8), and the lower extreme of reaction seat (57) is provided with inlet tube (9) and outlet pipe (10) with water-cooling passageway (8) intercommunication respectively.
5. A microwave plasma chemical vapor deposition apparatus according to claim 4, wherein: the inside of lower box (1) is provided with storage water tank (11), and the inside of storage water tank (11) is provided with water pump (12), and the play water end of water pump (12) is linked together with inlet tube (9) through communicating pipe one (13), and outlet pipe (10) are linked together with storage water tank (11) through communicating pipe two (14), and the output of singlechip (3) is connected to the input electricity of water pump (12).
6. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein: the outer cambered surface of reaction cover (51) is provided with observation pipeline (15), and the one end that keeps away from reaction cover (51) center of observation pipeline (15) is provided with glass observation window (16).
7. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein: the lower end of the lower box body (1) is uniformly provided with supporting legs (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320297165.4U CN219670640U (en) | 2023-02-23 | 2023-02-23 | Microwave plasma chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320297165.4U CN219670640U (en) | 2023-02-23 | 2023-02-23 | Microwave plasma chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219670640U true CN219670640U (en) | 2023-09-12 |
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ID=87896045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320297165.4U Active CN219670640U (en) | 2023-02-23 | 2023-02-23 | Microwave plasma chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219670640U (en) |
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- 2023-02-23 CN CN202320297165.4U patent/CN219670640U/en active Active
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