CN213142184U - Microwave plasma chemical vapor deposition device - Google Patents
Microwave plasma chemical vapor deposition device Download PDFInfo
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- CN213142184U CN213142184U CN202021593741.2U CN202021593741U CN213142184U CN 213142184 U CN213142184 U CN 213142184U CN 202021593741 U CN202021593741 U CN 202021593741U CN 213142184 U CN213142184 U CN 213142184U
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Abstract
The utility model relates to a microwave plasma chemical vapor deposition device, include: the water-cooled rotary lifting mechanism comprises a main shaft, a lifting mechanism, a rotating mechanism and a cooling mechanism, wherein the main shaft is connected with the growth platform; the lifting mechanism is connected with the main shaft so as to drive the main shaft to drive the growth platform to move up and down in the reaction cavity; the rotating mechanism is connected with the main shaft to drive the growth platform to rotate in the reaction cavity; the cooling mechanism is connected with the main shaft and used for carrying out water-cooling heat dissipation on the growth platform. The utility model discloses a microwave plasma chemical vapor deposition device is provided with the water-cooled rotary lifting mechanism of taking of being connected with growth platform, when preparing diamond film, can provide stable growth platform for chemical vapor deposition technology, has avoided the diamond film phenomenon that growth is inhomogeneous to appear, adopts the water-cooling heat dissipation, has avoided producing the perturbation to the electromagnetic wave owing to adopt the cooling air heat dissipation.
Description
Technical Field
The utility model belongs to the technical field of the diamond film preparation, concretely relates to microwave plasma chemical vapor deposition device.
Background
The diamond film has a series of excellent performances such as high hardness, low friction coefficient, high thermal conductivity, high light transmission, wide forbidden bandwidth, high resistivity, high breakdown field strength, high carrier mobility and the like, and is a multifunctional material with extremely excellent performances. Because of the excellent performance in such many aspects, diamond film is one of the most attractive hot materials in the field of new materials in the 21 st century.
The current methods for artificially synthesizing diamond include high temperature and high pressure process (HTHP), direct current arc plasma jet process (DCAPJ), Hot Filament Chemical Vapor Deposition (HFCVD), and Microwave Plasma Chemical Vapor Deposition (MPCVD), wherein MPCVD is the preferred method for preparing high quality diamond film. The microwave excited plasma has the advantages of high controllability, high plasma density, no electrode pollution, etc.
The microwave plasma chemical vapor deposition device is a process device for realizing chemical vapor deposition by utilizing microwave energy, and the existing microwave plasma chemical vapor deposition device has some problems when preparing a diamond film: in the diamond film synthesis process, the reaction cavity is easy to generate heat, in the prior art, the reaction cavity is usually filled with cooled air fluid for cooling, and the flow of the cooled air fluid can generate perturbation action on electromagnetic waves and has great influence on the stability of plasma. In addition, the height of the diamond film can be changed in the synthesis process of the diamond film, and the phenomenon of uneven growth of the diamond film can be caused.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems existing in the prior art, the utility model provides a microwave plasma chemical vapor deposition device. The to-be-solved technical problem of the utility model is realized through following technical scheme:
the utility model provides a microwave plasma chemical vapor deposition device, include: a rotary lifting mechanism with water cooling connected with the growth platform, the rotary lifting mechanism with water cooling comprises a main shaft, a lifting mechanism, a rotating mechanism and a cooling mechanism, wherein,
the top end of the main shaft is connected with the growth platform;
the lifting mechanism is connected with the main shaft so as to drive the main shaft to drive the growth platform to move up and down in the reaction cavity;
the rotating mechanism is connected with the main shaft so as to drive the main shaft to drive the growth platform to rotate in the reaction cavity;
and the cooling mechanism is connected with the main shaft and used for carrying out water-cooling heat dissipation on the growth platform.
In one embodiment of the present invention, the lifting mechanism comprises a first servo motor, a first transmission member and a first controller, wherein,
the first transmission piece is connected with the first servo motor and the main shaft;
the first controller is connected with the first servo motor and used for controlling the first servo motor to drive the first transmission piece to move so that the main shaft drives the growth platform to move up and down in the reaction cavity.
In one embodiment of the present invention, the rotating mechanism comprises a second servo motor, a second transmission member, and a second controller, wherein,
the second transmission piece is connected with the second servo motor and the main shaft;
the second controller is connected with the second servo motor and used for controlling the second servo motor to drive the second transmission part to move so that the main shaft drives the growth platform to rotate in the reaction cavity.
In one embodiment of the present invention, the cooling mechanism comprises a water jacket shaft sleeved outside the main shaft, wherein,
a cooling water inlet and a cooling water outlet are formed in the side surface of the water sleeve shaft;
the main shaft is internally provided with a water inlet channel and a water outlet channel, the water inlet channel is formed by an inlet groove formed in the main shaft and connected with the cooling water inlet, and the water outlet channel is formed by an outlet groove formed in the main shaft and connected with the cooling water outlet.
In one embodiment of the present invention, the lifting mechanism further comprises a guide sleeve and a telescopic bellows, the guide sleeve and the telescopic bellows are both sleeved outside the main shaft, wherein,
the guide sleeve is close to the top of the main shaft and used for providing a guide support for the main shaft to move up and down;
the telescopic corrugated pipe is located below the guide sleeve, and a sealing substrate is arranged between the telescopic corrugated pipe and the guide sleeve.
In an embodiment of the present invention, the rotating mechanism further includes a magnetic fluid device, the magnetic fluid device is sleeved outside the main shaft and located below the telescopic bellows.
In an embodiment of the present invention, a plurality of grooves are formed on the main shaft, a sealing ring is embedded in the groove, and the water jacket shaft passes through the sealing ring and is connected with the main shaft in a sealing manner.
Compared with the prior art, the beneficial effects of the utility model reside in that:
1. the utility model discloses a microwave plasma chemical vapor deposition device is provided with the water-cooled rotary lifting mechanism of taking that is connected with growth platform, and when the preparation diamond membrane, take water-cooled rotary lifting mechanism drive growth platform to reciprocate and rotary motion in the reaction chamber, can provide stable growth platform for chemical vapor deposition technology, avoided the diamond membrane phenomenon that growth is inhomogeneous to appear.
2. The utility model discloses a microwave plasma chemical vapor deposition device, the water-cooled rotatory elevating system in area of setting through the water-cooling heat dissipation, has avoided producing the perturbation to the electromagnetic wave owing to adopt the cooling air heat dissipation, has further improved diamond film growth environment's stability.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic perspective view of a rotary lifting mechanism with water cooling according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a rotary lifting mechanism with water cooling according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a cooling mechanism according to an embodiment of the present invention.
Description of the reference numerals
100-a main shaft; 101-a sealing ring; 200-a lifting mechanism; 201-a first servomotor; 202-a guide sleeve; 203-expansion bellows; 204-sealing substrate; 205-a coupling; 206-a lead screw; 207-linear bearings; 208-linear guide rail; 300-a rotation mechanism; 301-a second servo motor; 302-a magnetic fluid device; 303-a gear assembly; 400-a cooling mechanism; 401-water jacket shaft; 4011-cooling water inlet; 4012-cooling water outlet; 402-a water inlet channel; 403-water outlet channel; 404-a water inlet tank; 405-outlet channel.
Detailed Description
In order to further illustrate the technical means and effects of the present invention adopted to achieve the objects of the present invention, a microwave plasma chemical vapor deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings and the following detailed description.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention to achieve the predetermined objects can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are only for reference and description and are not intended to limit the technical solution of the present invention.
The principle of preparing diamond film by microwave plasma chemical vapor deposition device is that the microwave generated by microwave generator is transmitted to reaction cavity by waveguide tube, and CH is introduced into the reaction cavity4And H2The high-intensity microwave energy excites and decomposes the carbon-containing gas above the substrate to form active carbon-containing groups and atomic hydrogen, and plasma is formed, thereby depositing the diamond film on the substrate.
The microwave plasma chemical vapor deposition device generally comprises a microwave source, a waveguide tube, a microwave antenna and a reaction cavity, wherein the microwave source, the waveguide tube and the microwave antenna form a microwave feed-in device. The microwave feed-in device leads microwaves from a microwave source into the reaction cavity to excite the reaction gas to form spherical plasma, a growth platform is arranged in the reaction cavity and located below the spherical plasma, a substrate is arranged on the growth platform, and finally the diamond film is obtained by deposition on the substrate. The thickness of the diamond film can be changed in the process of forming the diamond film on the substrate, so that the growth environment of the diamond film can be changed, and the problem of uneven growth of the diamond film is caused. In addition, the MPCVD process generates high temperature problem, and the high temperature will also have a certain influence on the crystal quality of the diamond film. To solve the above problems. The embodiment provides a microwave plasma chemical vapor deposition device.
Example one
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a schematic perspective view of a rotary lifting mechanism with water cooling according to an embodiment of the present invention; fig. 2 is a schematic structural diagram of a rotary lifting mechanism with water cooling according to an embodiment of the present invention. The microwave plasma chemical vapor deposition device of the embodiment comprises a rotary lifting mechanism with water cooling, which is connected with a growth platform, wherein the rotary lifting mechanism with water cooling comprises a main shaft 100, a lifting mechanism 200, a rotating mechanism 300 and a cooling mechanism 400, wherein the top end of the main shaft 100 is connected with the growth platform; the lifting mechanism 200 is connected with the main shaft 100 to drive the growth platform to move up and down in the reaction chamber; the rotating mechanism 300 is connected with the main shaft 100 to drive the growth platform to rotate in the reaction chamber; the cooling mechanism 400 is connected to the main shaft 100 and is used for performing water cooling on the growth platform.
The microwave plasma chemical vapor deposition device is provided with a rotary lifting mechanism with water cooling, which is connected with the growth platform, and when a diamond film is prepared, the rotary lifting mechanism with water cooling drives the growth platform to move up and down and rotate in the reaction cavity. In the continuous growth process of the diamond film, the growth platform is correspondingly adjusted to automatically descend along with the increase of the thickness of the diamond film, so that the position of the upper surface of the diamond relative to the plasma can be kept unchanged, the growth of the diamond film in a stable environment is ensured, and the quality of the diamond film is improved. In the continuous growth process of the diamond film, the water-cooled rotary lifting mechanism drives the growth platform to rotate in the reaction chamber, so that the phenomenon of uneven growth of the diamond film can be avoided. In addition, through water cooling heat dissipation, the phenomenon that cooling air is adopted for heat dissipation to generate perturbation on electromagnetic waves is avoided, and the stability of the growth environment of the diamond film is further improved.
Specifically, the lifting mechanism 200 of the present embodiment includes a first servo motor 201, a first transmission member, and a first controller (not shown in the figure). Wherein, the first servo motor 201 provides power for the linear motion of the main shaft 100. The first transmission member is respectively connected with the first servo motor 201 and the main shaft 100, and converts the rotary motion of the first servo motor 201 into the linear motion of the main shaft 100, so that the main shaft 100 drives the growth platform to move up and down in the reaction chamber. In this embodiment, the first transmission member includes a coupler 205, a lead screw 206, a linear bearing 207, and a linear guide 208, the first servo motor 201 drives the lead screw 206 to rotate through the coupler 205, and under the guidance of the linear bearing 207 and the linear guide 208, the rotational motion is converted into a linear motion, so as to drive the main shaft 100 to move up and down. The first controller is connected to the first servo motor 201 and is configured to control the first servo motor 201 to drive the first transmission member to move, so that the main shaft 100 drives the growth platform to move up and down in the reaction chamber.
The first transmission member may be any other mechanical mechanism capable of converting the rotational motion of the first servo motor 201 into the linear motion of the spindle 100, and is not limited thereto.
Further, the lifting mechanism 200 further comprises a guide sleeve 202 and a telescopic bellows 203, the guide sleeve 202 and the telescopic bellows 203 are both sleeved outside the main shaft 100, wherein the guide sleeve 202 is close to the top of the main shaft 100 and used for providing a guide support for the main shaft 100 to move up and down; the bellows 203 is located below the guide sleeve 202, and a seal substrate 204 is provided between the bellows 203 and the guide sleeve 202. The bellows 203 and the sealing substrate 204 form a telescopic vacuum chamber to ensure that a high vacuum degree is maintained above the sealing substrate 204.
In the present embodiment, the rotating mechanism 300 includes a second servo motor 301, a second transmission member, and a second controller (not shown), wherein the second servo motor 301 provides power for the rotation of the spindle 100. The second transmission member is respectively connected with the second servo motor 301 and the spindle 100, and converts the rotary motion of the second servo motor 301 into the rotary motion of the spindle 100, so that the spindle 100 drives the growth platform to make rotary motion in the reaction chamber. In this embodiment, the second transmission member includes a gear assembly 303, and the second servo motor 301 transmits the rotational power to the spindle 100 through the gear assembly 303 to drive the spindle 100 to rotate. The second controller is connected to the second servo motor 301, and is configured to control the second servo motor 301 to drive the second transmission member to move, so that the main shaft 100 drives the growth platform to rotate in the reaction chamber.
It should be noted that the second transmission member may be another mechanical mechanism capable of converting the rotational motion of the second servo motor 301 into the rotational motion of the spindle 100, which is not limited in this regard.
Further, the rotating mechanism 300 further includes a magnetic fluid device 302, and the magnetic fluid device 302 is sleeved outside the main shaft 100 and is located below the bellows 203. Magnetic fluid device 302 has built-in bearings that cooperate with guide sleeve 202 to provide a guided support for rotational movement of spindle 100. The magnetic fluid device 302 is a vacuum sealing device that can transfer rotational motion into a sealed container, and when magnetic fluid is injected into the gap of the magnetic field, it can fill the entire gap to form a "liquid O-ring" to achieve the sealing effect. The magnetic fluid is also called magnetic liquid, ferromagnetic fluid or magnetic liquid, is a novel functional material, and has the liquidity of liquid and the magnetism of solid magnetic material.
In the continuous growth process of the diamond film, the rotating mechanism 300 drives the main shaft 100 to drive the growth platform to rotate in the reaction chamber, and the growth platform is adjusted to automatically descend by using the lifting mechanism 200 correspondingly along with the increase of the thickness of the diamond film so as to keep the position of the upper surface of the diamond relative to the plasma unchanged, ensure the growth of the diamond film in a stable environment and improve the quality of the diamond film.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a cooling mechanism according to an embodiment of the present invention. As shown in the figure, the cooling mechanism 400 of the present embodiment includes a water jacket shaft 401 sleeved outside the main shaft 100, wherein a cooling water inlet 4011 and a cooling water outlet 4012 are opened on a side surface of the water jacket shaft 401; the main shaft 100 is provided with a water inlet channel 402 and a water outlet channel 403 inside, the water inlet channel 402 is connected with a cooling water inlet 4011 through a water inlet groove 404 arranged on the main shaft 100, and the water outlet channel 403 is connected with a cooling water outlet 4012 through a water outlet groove 405 arranged on the main shaft 100. In this embodiment, the top end of the water inlet channel 402 is communicated with the top end of the water outlet channel 403, the cooling water inlet 4011 and the cooling water outlet 4012 are communicated with external cooling water, a circulating water cooling loop is formed between the cooling water and the growth platform, and the cooling water and the growth platform exchange heat and then are output to the outside of the reaction cavity. The water inlet tank 404 and the water outlet tank 405 are arranged around the side surface of the main shaft 100, the rotating mechanism 300 drives the main shaft 100 to drive the growth platform to rotate in the reaction cavity, the water jacket shaft 401 is fixed, and after external cooling water enters through the water inlet tank 404 connected with the water inlet channel 402, the external cooling water exchanges heat with the growth platform and is then sequentially discharged from the water outlet channel 403, the water outlet tank 405 and the cooling water outlet 4012. Furthermore, a plurality of grooves are formed in the main shaft 100, sealing rings 101 are embedded in the grooves, and the water jacket shaft 401 is connected with the main shaft 100 in a sealing mode through the sealing rings 101.
The cooling mechanism 400 of the embodiment adopts water cooling to dissipate heat, and carries out circulating water cooling on the growth platform, thereby avoiding the generation of perturbation on electromagnetic waves due to cooling air heat dissipation, and further improving the stability of the growth environment of the diamond film.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc. are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (7)
1. A microwave plasma chemical vapor deposition apparatus, comprising: the water-cooled rotary lifting mechanism is connected with the growth platform and comprises a main shaft (100), a lifting mechanism (200), a rotating mechanism (300) and a cooling mechanism (400), wherein,
the top end of the main shaft (100) is connected with the growth platform;
the lifting mechanism (200) is connected with the main shaft (100) so as to drive the main shaft (100) to drive the growth platform to move up and down in the reaction cavity;
the rotating mechanism (300) is connected with the main shaft (100) so as to drive the main shaft (100) to drive the growth platform to rotate in the reaction cavity;
and the cooling mechanism (400) is connected with the main shaft (100) and is used for carrying out water-cooling heat dissipation on the growth platform.
2. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein the lifting mechanism (200) comprises a first servo motor (201), a first transmission member, and a first controller, wherein,
the first transmission piece is respectively connected with the first servo motor (201) and the main shaft (100);
the first controller is connected with the first servo motor (201) and used for controlling the first servo motor (201) to drive the first transmission piece to move so that the main shaft (100) drives the growth platform to move up and down in the reaction cavity.
3. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein the rotation mechanism (300) comprises a second servo motor (301), a second transmission, and a second controller, wherein,
the second transmission piece is respectively connected with the second servo motor (301) and the main shaft (100);
the second controller is connected with the second servo motor (301) and used for controlling the second servo motor (301) to drive the second transmission piece to move so that the main shaft (100) drives the growth platform to rotate in the reaction cavity.
4. A microwave plasma chemical vapor deposition apparatus according to claim 1, wherein the cooling mechanism (400) comprises a water jacket shaft (401) sleeved outside the main shaft (100), wherein,
a cooling water inlet (4011) and a cooling water outlet (4012) are formed in the side surface of the water sleeve shaft (401);
the water inlet channel (402) and the water outlet channel (403) are arranged inside the main shaft (100), the water inlet channel (402) is connected with the cooling water inlet (4011) through a water inlet groove (404) formed in the main shaft (100), and the water outlet channel (403) is connected with the cooling water outlet (4012) through a water outlet groove (405) formed in the main shaft (100).
5. A microwave plasma chemical vapor deposition apparatus according to claim 2, wherein the lifting mechanism (200) further comprises a guide sleeve (202) and a bellows (203), the guide sleeve (202) and the bellows (203) are both sleeved outside the main shaft (100), wherein,
the guide sleeve (202) is close to the top of the main shaft (100) and used for providing guide support for the main shaft (100) to move up and down;
the telescopic corrugated pipe (203) is located below the guide sleeve (202), and a sealing substrate (204) is arranged between the telescopic corrugated pipe (203) and the guide sleeve (202).
6. A microwave plasma chemical vapor deposition apparatus according to claim 5, wherein the rotating mechanism (300) further comprises a magnetic fluid device (302), the magnetic fluid device (302) is sleeved outside the main shaft (100) and is located below the bellows (203).
7. A microwave plasma chemical vapor deposition apparatus according to claim 4, wherein the main shaft (100) is provided with a plurality of grooves, the grooves are embedded with sealing rings (101), and the water jacket shaft (401) is hermetically connected with the main shaft (100) through the sealing rings (101).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021593741.2U CN213142184U (en) | 2020-08-04 | 2020-08-04 | Microwave plasma chemical vapor deposition device |
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| CN202021593741.2U CN213142184U (en) | 2020-08-04 | 2020-08-04 | Microwave plasma chemical vapor deposition device |
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| CN213142184U true CN213142184U (en) | 2021-05-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774360A (en) * | 2021-11-11 | 2021-12-10 | 陛通半导体设备(苏州)有限公司 | Chemical vapor deposition equipment capable of reciprocating, rotating and lifting |
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- 2020-08-04 CN CN202021593741.2U patent/CN213142184U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774360A (en) * | 2021-11-11 | 2021-12-10 | 陛通半导体设备(苏州)有限公司 | Chemical vapor deposition equipment capable of reciprocating, rotating and lifting |
| CN113774360B (en) * | 2021-11-11 | 2022-02-11 | 陛通半导体设备(苏州)有限公司 | Chemical vapor deposition equipment capable of reciprocating, rotating and lifting |
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