CN207016850U - A kind of microwave plasma CVD device - Google Patents
A kind of microwave plasma CVD device Download PDFInfo
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- CN207016850U CN207016850U CN201720910386.9U CN201720910386U CN207016850U CN 207016850 U CN207016850 U CN 207016850U CN 201720910386 U CN201720910386 U CN 201720910386U CN 207016850 U CN207016850 U CN 207016850U
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Abstract
It the utility model is related to a kind of microwave plasma CVD device, including housing, the upper surface of housing is provided with microwave input port, substrate is provided with below microwave input port, the bottom surface of substrate is provided with loop aerial, the tubulose microwave window made of microwave dielectric material is provided between substrate and housing, the bottom of housing is provided with deposition table, deposition table is located at the lower section of loop aerial, and deposition table can move up and down under the driving of the first lowering or hoisting gear, the lateral surface of deposition table is provided with the plasma stability ring of tubular structure, deposition table, plasma stability ring, housing, tubulose microwave window and substrate surround the resonator to form closing.Microwave plasma CVD device of the present utility model is simple in construction, processing cost is low, production efficiency is high and finished product quality is high.
Description
Technical field
It the utility model is related to a kind of diamond production apparatus, more particularly to a kind of microwave plasma CVD
Device, in addition the utility model further relate to the production method of the microwave plasma CVD device.
Background technology
Diamond is commonly called as diamond, it be nature have found there is maximum hardness and intensity and the high mineral of wearability
Material.The method of artificially synthesizing diamond includes high temperature and high pressure method (HTHP), Direct Current Arc Plasma Jet at present
(DCAPJ), hot filament CVD (HFCVD), MPCVD method (MPCVD), wherein MPCVD
It is the prefered method for preparing high quality diamond.Because compared with producing the other method of plasma, microwave-excitation
Plasma has the series of advantages such as electrodeless Substances Pollution, controllability are good, plasma density is high.Diamond MPCVD is filled
The core component put is the resonator for producing microwave plasma, and its design directly affects plasma in MPCVD devices
The distribution of body excites degree with it, and the quality of sedimentation rate and diamond film on diamond film has conclusive influence.
The cavity resonator structure of existing MPCVD devices mainly includes multimode non-cylindrical resonator, and its microwave that is mainly characterized by passes through a ring
Shape antenna inputs from the lower section of cavity, and the quartz window of ring-type has then been positioned in the lower section of loop aerial, the benefit so done
It is the lower section that quartz window has been hidden in deposition table.The power of MPCVD diamond film deposition devices is set to reach more than 10kw's
High level, while evaded plasma and the etching of microwave window is polluted.But multimode non-cylindrical resonant cavity type MPCVD devices
Profile very irregular, thus its design difficulty is larger, high processing costs.In addition, this multimode non-cylindrical resonator MPCVD dresses
Put, because microwave is that the sample stage for growing diamond is fixed from the input of the lower section of resonant cavity, and grow it is thicker (>
3mm) during monocrystalline or polycrystalline diamond, with the increase of thickness, the distance between diamond surface and plasma are more
Come closer to causing growth temperature more and more higher, this just needs to reduce microwave input power or chamber pressure to maintain to grow
Temperature, the reduction of microwave power can cause the reduction of growth rate, and this is unfavorable to production.The unstability of growth conditions is not
Beneficial to the raising of diamond production efficiency and quality.The conventional method solved at present is to grow repeatedly, that is to say, that diamond exists
Interruption of growth after growth certain thickness, is put into deeper growing die after being processed to and reaches conjunction at high power in the hope of reaching
Suitable growth temperature.Growth so repeatedly, had both added the contamination probability of diamond surface, and had reduced production efficiency again.
In view of it is above-mentioned the defects of, the design people, be actively subject to research and innovation, to found a kind of microwave of new structure
Plasma CVD device.
Utility model content
In order to solve the above technical problems, the purpose of this utility model is to provide, one kind is simple in construction, processing cost is low, production
Efficiency high and the high microwave plasma CVD device of finished product quality.
Microwave plasma CVD device of the present utility model includes housing, and the upper surface of the housing is provided with
Microwave input port, substrate is provided with below the microwave input port, the bottom surface of the substrate is provided with loop aerial, the base
Be provided with the tubulose microwave window made of microwave dielectric material between plate and housing, the inner chamber of the tubulose microwave window with it is described micro-
Ripple input port is connected, and the top of tubulose microwave window is connected with housing, and the bottom of tubulose microwave window is arranged at the top surface of the substrate,
The bottom of the housing is provided with deposition table, and the deposition table is located at the lower section of loop aerial, and deposition table can be first
Moved up and down under the driving of lowering or hoisting gear, the lateral surface of the deposition table is provided with the plasma stability ring of tubular structure, institute
State deposition table, plasma stability ring, housing, tubulose microwave window and substrate and surround the resonator to form closing.
Further, microwave plasma CVD device of the present utility model includes housing, the deposition table
It is interior to be provided with recyclable cooling medium.
Further, microwave plasma CVD device of the present utility model includes housing, the plasma
Recyclable cooling medium is provided with body stabilizing ring.
Further, microwave plasma CVD device of the present utility model includes housing, the plasma
Body stabilizing ring can move up and down under the driving of the second lowering or hoisting gear along the surface of deposition table.
Further, microwave plasma CVD device of the present utility model includes housing, the plasma
Body stabilizing ring is fabricated from iron.
By such scheme, the utility model at least has advantages below：Microwave plasma chemical of the present utility model
Vapor phase growing apparatus, by the way that tubulose microwave window to be arranged to the back side of loop aerial, the maximum microwave power that can input
It is greatly enhanced, maximum can input 20kw microwave power, can effectively avoid under high power plasma to by microwave
The etching problem of tubulose microwave window made of medium window.The lift design of deposition table, can realize the continuous life of diamond
The problem of length, avoids the increase with thickness of diamond, and the growth temperature of diamond surface increases therewith, can realize Buddha's warrior attendant
The stability and high efficiency growth of stone.In summary, microwave plasma CVD device of the present utility model is simple in construction, adds
Work cost is low, production efficiency is high and finished product quality is high.
Described above is only the general introduction of technical solutions of the utility model, in order to better understand skill of the present utility model
Art means, and being practiced according to the content of specification, with preferred embodiment of the present utility model and coordinate accompanying drawing detailed below
Describe in detail bright as after.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model microwave plasma CVD device；
Wherein, 1：Housing；2：Microwave input port；3：Substrate；4：Loop aerial；5：Tubulose microwave window； 6：Deposition table；7：
Plasma stability ring；8：Shake chamber chamber；9：Plasma ball.
Embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is used to illustrate the utility model, but is not limited to the scope of the utility model.
Referring to Fig. 1, a kind of microwave plasma CVD device of the preferred embodiment of the utility model one, including
Housing 1, the upper surface of housing are provided with microwave input port 2, and substrate 3 is provided with below microwave input port, and the bottom surface of substrate is set
There is loop aerial 4, the tubulose microwave window 5 made of microwave dielectric material is provided between substrate and housing, preferably, tubulose
Microwave window is made up of quartz.The inner chamber of tubulose microwave window connects with microwave input port, during practical application, the top of tubulose microwave window
It is connected positioned at the edge of microwave input port and with housing, the bottom of tubulose microwave window is arranged at the top surface of substrate, the bottom of housing
Deposition table 6 is provided with, deposition table is located at the lower section of loop aerial, and deposition table (can not shown in the first lowering or hoisting gear in figure
Go out) driving under move up and down, the lateral surface of deposition table is provided with the plasma stability ring 7 of tubular structure, deposition table, etc.
Gas ions stabilizing ring, housing, tubulose microwave window and substrate surround the resonator 8 to form closing.Preferably, it is provided with deposition table
Recyclable cooling medium.Recyclable cooling medium also is provided with plasma stability ring.Water etc. can be selected as recyclable
Cooling medium, and its circulating cooling is realized by the pump housing.Preferably, plasma stability ring can be in the second lowering or hoisting gear
Moved up and down under the driving of (not shown) along the surface of deposition table, plasma stability ring is fabricated from iron.
Wherein, the setting of plasma cooling ring, diamond is avoided in growth course, the decline of deposition table causes chamber
The variation issue of bulk electric field, so as to avoid the change of plasmasphere form.In order to avoid at high power, plasma is to pipe
Tubulose microwave window is placed in the back side of loop aerial by the etching pollution problem of shape microwave window, the utility model, i.e., away from plasma
The side of body.Microwave reaches resonator, and excite hydrogen to produce by the surface feed-in cavity of resonator after tubulose microwave window
Raw plasma ball 9, the position of plasmasphere is placed exactly in the top of deposition table.The cooling medium being connected with deposition table, ensure
The temperature of the deposition table of growth diamond is unlikely to too high.Plasma stability ring can be adjusted up and down, coordinate waveguide transmission
Three pins and short-circuit plunger on line make the resonance of resonator be transferred to optimum state.Deposition table can be controlled by the first lowering or hoisting gear
It is lifted, and the temperature of growth diamond is adjusted with this.Deposition table is adjusted by the first lowering or hoisting gear continuously to decline, it is possible to achieve gold
Growth conditions (microwave power, chamber pressure, gas component etc.) in the continuous growth course of hard rock is invariable.It is big so as to realize
The disposable continuous growth of monocrystalline and thick film diamond.
Microwave plasma CVD device of the present utility model can solve the problem that in High-Power Microwave input condition
Under, plasma to tubulose microwave window etching pollution problem and thickness more than 3mm diamond single crystal and thick film it is continuous
Growth question, and its simple in construction, stable cavity easy care.
The microwave plasma CVD device of diamond synthesizing of the present utility model is produced by following steps
Diamond：
S1：Resonator is vacuumized；
S2：Hydrogen is filled with into resonator；
S3：Launch microwave to microwave input port using microwave generating apparatus；
S4：Methane gas is passed through into resonator and carries out diamond film；
S5：Deposition table is driven to decline by the first lowering or hoisting gear, to match the speed of growth of diamond.
It the above is only preferred embodiment of the present utility model, be not limited to the utility model, it is noted that for
For those skilled in the art, on the premise of the utility model technical principle is not departed from, if can also make
Dry improvement and modification, these improvement and modification also should be regarded as the scope of protection of the utility model.
Claims (5)
1. a kind of microwave plasma CVD device, including housing, it is characterised in that：The upper surface of the housing is set
There is microwave input port, substrate is provided with below the microwave input port, the bottom surface of the substrate is provided with loop aerial, described
Be provided with the tubulose microwave window made of microwave dielectric material between substrate and housing, the inner chamber of the tubulose microwave window with it is described
Microwave input port is connected, and the top of tubulose microwave window is connected with housing, and the bottom of tubulose microwave window is arranged at the top of the substrate
Face, the bottom of the housing are provided with deposition table, and the deposition table is located at the lower section of loop aerial, and deposition table can be
Being moved up and down under the driving of one lowering or hoisting gear, the lateral surface of the deposition table is provided with the plasma stability ring of tubular structure,
The deposition table, plasma stability ring, housing, tubulose microwave window and substrate surround the resonator to form closing.
2. microwave plasma CVD device according to claim 1, it is characterised in that：In the deposition table
Provided with recyclable cooling medium.
3. microwave plasma CVD device according to claim 1, it is characterised in that：The plasma
Recyclable cooling medium is provided with stabilizing ring.
4. microwave plasma CVD device according to claim 3, it is characterised in that：The plasma
Stabilizing ring can move up and down under the driving of the second lowering or hoisting gear along the surface of deposition table.
5. microwave plasma CVD device according to claim 4, it is characterised in that：The plasma
Stabilizing ring is fabricated from iron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720910386.9U CN207016850U (en) | 2017-07-25 | 2017-07-25 | A kind of microwave plasma CVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720910386.9U CN207016850U (en) | 2017-07-25 | 2017-07-25 | A kind of microwave plasma CVD device |
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| Publication Number | Publication Date |
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| CN207016850U true CN207016850U (en) | 2018-02-16 |
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| CN201720910386.9U Active CN207016850U (en) | 2017-07-25 | 2017-07-25 | A kind of microwave plasma CVD device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107227450A (en) * | 2017-07-25 | 2017-10-03 | 无锡远稳烯科技有限公司 | A kind of microwave plasma CVD device and its production method |
| WO2020082844A1 (en) * | 2018-10-25 | 2020-04-30 | 六晶科技有限公司 | Microwave plasma cvd device and method for synthesizing diamond using same |
-
2017
- 2017-07-25 CN CN201720910386.9U patent/CN207016850U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107227450A (en) * | 2017-07-25 | 2017-10-03 | 无锡远稳烯科技有限公司 | A kind of microwave plasma CVD device and its production method |
| WO2020082844A1 (en) * | 2018-10-25 | 2020-04-30 | 六晶科技有限公司 | Microwave plasma cvd device and method for synthesizing diamond using same |
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