CN112647126A - Embedded water cooling table for large-particle MPCVD single crystal diamond temperature-control continuous growth and application thereof - Google Patents
Embedded water cooling table for large-particle MPCVD single crystal diamond temperature-control continuous growth and application thereof Download PDFInfo
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- CN112647126A CN112647126A CN202011393749.9A CN202011393749A CN112647126A CN 112647126 A CN112647126 A CN 112647126A CN 202011393749 A CN202011393749 A CN 202011393749A CN 112647126 A CN112647126 A CN 112647126A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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Abstract
An embedded water cooling platform for temperature-controlled continuous growth of large-particle MPCVD single-crystal diamond and application thereof are provided, which aims to continuously and controllably adjust the distance between the surface of a diamond sample and a plasma core under the condition of not changing the plasma distribution in a growth cabin body and realize long-term continuous and stable growth of the large-particle CVD single-crystal diamond. The embedded water cooling table comprises an outer water cooling table, an inner water cooling table, a sample holder and two lifting motors, wherein the outer water cooling table is of an integrated structure consisting of an outer table body and a connecting body, a cavity is formed in the outer table body, and a through hole is formed along the central axis of the connecting body; the inside water-cooling platform constitute an organic whole structure by the water-cooling stage body and connecting rod, open inside of inside water-cooling platform has the water-cooling chamber, the water-cooling stage body is located the cavity, the connecting rod cover is established in the through-hole. The invention realizes the constant temperature control in the long-time continuous growth process of the diamond sample by the lifting of the internal water cooling table, thereby realizing the growth of the large-particle MPCVD single crystal diamond.
Description
Technical Field
The invention relates to an embedded lifting water cooling table in a Microwave Plasma Chemical Vapor Deposition (MPCVD) diamond growth device and application thereof.
Background
In the field of artificial synthesis of diamond, the Microwave Plasma Chemical Vapor Deposition (MPCVD) diamond growth technology has the advantages of large growth area, high crystal quality, capability of realizing high-purity large-size growth and the like, thereby having wide development prospect. The MPCVD single crystal diamond can meet the requirements of different application fields of jewelry, precision processing, chip heat dissipation and the like. The principle of the equipment required by the growth of the MPCVD single crystal diamond, namely the MPCVD diamond deposition system, is that a high-density carbon-containing plasma precursor is formed above a sample table by coupling microwaves through a resonant cavity, and then the diamond is deposited and grown on the surface of a substrate cooled to a certain temperature. In the growth process of the single crystal diamond, along with the increase of the growth thickness, a sample gradually enters a plasma core, and the temperature is continuously increased, so that the growth process cannot be continued after a period of time. However, the water-cooled sample stage inside the resonant cavity is also a boundary for microwave reflection, and the whole height of the sample stage is reduced, and the state of the plasma is changed at the same time, so that the effect of controlling the temperature of the sample to be constant cannot be achieved.
Disclosure of Invention
The invention aims to provide an embedded water cooling table for temperature-controlled continuous growth of large-particle MPCVD single-crystal diamond and application thereof, wherein the embedded water cooling table is used for continuously and controllably adjusting the distance between the surface of a diamond sample and a plasma core under the condition of not changing the distribution of plasma in a growth cabin body, so that the temperature of the surface of the diamond sample is adjusted in the growth process, and the long-term continuous and stable growth of the large-particle CVD single-crystal diamond is realized.
The embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single crystal diamond comprises an outer water cooling table, an inner water cooling table, a sample holder and two lifting motors, wherein the outer water cooling table is of an integrated structure consisting of an outer table body and a connecting body;
the inner water-cooling table is of an integrated structure consisting of a water-cooling table body and a connecting rod, a sample holder is arranged on the water-cooling table body, a water-cooling cavity is formed in the inner part of the inner water-cooling table body, the water-cooling table body is positioned in the concave cavity, and the connecting rod is sleeved in the through hole;
the first lifting motor drives the outer water cooling table to move up and down, and the second lifting motor drives the inner water cooling table to move up and down.
The method for growing the diamond by using the embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single-crystal diamond is realized according to the following steps:
placing diamond seed crystals on a sample support of an inner water cooling table, and driving the inner water cooling table to lift through a second lifting motor, so that the growth surface of the diamond seed crystals is flush with the upper surface of an outer water cooling table;
secondly, closing a cabin door of the MPCVD equipment, and pumping the pressure in the cabin to be lower than 5 x 10 by using a vacuum pump-5mbar, introducing 200-sccm high-purity hydrogen with the flow rate of 500sccm, inputting 800W microwave for starting when the air pressure reaches 10-15mbar, driving the outer-layer water cooling table to lift through the first lifting motor, and adjusting the state of the plasma until the microwave reflection power is less than 100W;
thirdly, continuing to increase the air pressure and the microwave power until the temperature of the diamond sample reaches T ℃, and introducing methane to start to grow diamond crystals;
and fourthly, when the actual temperature reaches 1.01T-1.02T ℃ in the growth process of the diamond crystal, adjusting the movement of the internal water cooling table through a second lifting motor to enable the diamond to be far away from the plasma core, reducing the temperature to T ℃ for temperature adjustment, continuing to grow and repeating the temperature adjustment process until the growth of the single crystal diamond is finished.
The embedded water cooling table is matched with the microwave resonance of the whole cabin body through the outer water cooling table, the temperature of a diamond sample is controlled through the inner water cooling table, the constant temperature control in the long-time continuous growth process of the diamond sample is realized through the lifting of the inner water cooling table, the growth of large-particle MPCVD single crystal diamond is further realized, and the growth quality of the single crystal diamond is improved.
The invention provides an embedded lifting water-cooling sample table which can adjust the distance between the upper surface of a diamond sample and the core of a plasma under the condition of not changing the state of the plasma, thereby controlling the constant temperature of the sample in the growth process and realizing the long-term continuous growth of large-thickness monocrystalline diamond.
Drawings
FIG. 1 is a schematic structural diagram of an embedded water cooling table for large-particle MPCVD single crystal diamond temperature-controlled continuous growth according to the present invention.
Detailed Description
The first embodiment is as follows: the embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single crystal diamond comprises an outer water cooling table 1, an inner water cooling table 2, a sample holder 4 and two lifting motors, wherein the outer water cooling table 1 is an integrated structure consisting of an outer table body 1-1 and a connector 1-2, a water cooling cavity is formed in the outer water cooling table 1, a concave cavity 1-3 is formed in the outer table body 1-1, and a through hole 1-4 is formed along the central axis of the connector 1-2;
the inner water cooling table 2 is of an integrated structure consisting of a water cooling table body 2-1 and a connecting rod 2-2, a sample holder 4 is arranged on the water cooling table body 2-1, a water cooling cavity is formed in the inner part of the inner water cooling table 2, the water cooling table body 2-1 is positioned in the concave cavity 1-3, and the connecting rod 2-2 is sleeved in the through hole 1-4;
the first lifting motor 5 drives the outer water cooling table 1 to move up and down, and the second lifting motor 6 drives the inner water cooling table 2 to move up and down.
In the embodiment, the first lifting motor 5 and the second lifting motor 6 are screw lifting motors, and the screw pushes the connecting piece to lift and control.
The second embodiment is as follows: the difference between the present embodiment and the first embodiment is that a positioning groove 3 is formed on the water-cooling table body 2-1.
The third concrete implementation mode: the second difference between this embodiment and the second embodiment is that the sample holder 4 is placed in the positioning groove 3.
The fourth concrete implementation mode: the difference between the first embodiment and the third embodiment is that the water cooling cavity of the inner water cooling platform 2 and the water cooling cavity of the outer water cooling platform 1 are connected with a water cooling system.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is that the first lifting motor 5 and the second lifting motor 6 are both screw rod lifting motors.
The sixth specific implementation mode: the method for growing the diamond by using the embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single-crystal diamond is realized according to the following steps:
firstly, placing diamond seed crystals on a sample holder 4 of an inner water-cooling table 2, and driving the inner water-cooling table 2 to lift through a second lifting motor 6, so that the growth surface of the diamond seed crystals is flush with the upper surface of an outer water-cooling table 1;
secondly, closing a cabin door of the MPCVD equipment, and pumping the pressure in the cabin to be lower than 5 x 10 by using a vacuum pump-5Introducing 200-dose high-purity hydrogen with the flow rate of 500sccm, inputting 800W microwave for starting when the air pressure reaches 10-15mbar, driving the outer-layer water cooling table 1 to lift through the first lifting motor 5, and adjusting the state of the plasma until the microwave reflection power is less than 100W;
thirdly, continuing to increase the air pressure and the microwave power until the temperature of the diamond sample reaches T ℃, and introducing methane to start to grow diamond crystals;
fourthly, when the actual temperature reaches 1.01T-1.02T ℃ in the growth process of the diamond crystal, the second lifting motor 6 is used for adjusting the movement of the internal water cooling table 2, so that the diamond is far away from the plasma core, the temperature is reduced to T ℃ for temperature adjustment, the growth is continued, and the temperature adjustment process is repeated until the growth of the single crystal diamond is finished.
The seventh embodiment: the sixth embodiment is different from the sixth embodiment in that the purity of the hydrogen gas in the second step is more than 99.99%.
The specific implementation mode is eight: the difference between the sixth embodiment and the seventh embodiment is that the plasma state is adjusted in the second step until the microwave reflected power is 70-80W.
The specific implementation method nine: this embodiment differs from one of the sixth to eighth embodiments in that the diamond sample temperature T described in step three is in the range 900 ℃ < T < 950 ℃.
The detailed implementation mode is ten: the difference between the sixth embodiment and the ninth embodiment is that in the fourth step, when the actual temperature reaches 1.01T ℃ in the process of growing the diamond crystal, the movement of the internal water cooling table 2 is adjusted through the second lifting motor 6.
Example (b): the embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single crystal diamond comprises an outer-layer water cooling table 1, an inner water cooling table 2, a sample holder 4 and two lifting motors, wherein the outer-layer water cooling table 1 is of an integrated structure consisting of an outer table body 1-1 and a connector 1-2, a water cooling cavity is formed in the outer-layer water cooling table 1, a concave cavity 1-3 is formed in the outer table body 1-1, and a through hole 1-4 is formed along the central axis of the connector 1-2;
the inner water cooling table 2 is of an integrated structure consisting of a water cooling table body 2-1 and a connecting rod 2-2, a sample holder 4 is arranged on the water cooling table body 2-1, a water cooling cavity is formed in the inner part of the inner water cooling table 2, the water cooling table body 2-1 is positioned in the concave cavity 1-3, and the connecting rod 2-2 is sleeved in the through hole 1-4;
the first lifting motor 5 drives the outer water cooling table 1 to move up and down, and the second lifting motor 6 drives the inner water cooling table 2 to move up and down.
The application example is as follows: the method for growing the diamond by using the embedded water cooling table for the temperature-controlled continuous growth of the large-particle MPCVD single-crystal diamond is implemented according to the following steps:
firstly, placing diamond seed crystals on a sample holder 4 of an inner water-cooling table 2, and driving the inner water-cooling table 2 to lift through a second lifting motor 6, so that the growth surface of the diamond seed crystals is flush with the upper surface of an outer water-cooling table 1;
secondly, closing a cabin door of the MPCVD equipment, and pumping the pressure in the cabin to be lower than 5 x 10 by using a vacuum pump-5mbar, introducing high-purity hydrogen with the flow of 350sccm, inputting 800W microwave for starting when the air pressure reaches 12mbar, driving the outer-layer water cooling table 1 to lift through the first lifting motor 5, and adjusting the plasma state until the microwave reflection power is 80W;
thirdly, continuously increasing the air pressure and the microwave power until the temperature of the diamond sample reaches 920 ℃, and introducing methane to start to grow diamond crystals;
fourthly, when the actual temperature reaches 1.01T ℃ in the growth process of the diamond crystal, the second lifting motor 6 is used for adjusting the movement of the internal water cooling table 2, so that the diamond is far away from the plasma core, the temperature is reduced to T ℃ for temperature adjustment, the growth is continued, and the temperature adjustment process is repeated until the growth of the single crystal diamond is finished.
In the embodiment, the outer water-cooling table is matched with the whole MPCVD resonance cabin body, the distribution, the intensity and the reflected power of the plasma in the cabin body are adjusted by adjusting the height of the outer water-cooling table, and when the position is adjusted to the optimal position, the outer water-cooling table does not move any more in the growth process; the internal water cooling table is used for adjusting the relative height of the diamond sample, and the distance between the surface of the diamond and the plasma core can be increased or shortened by increasing or decreasing the internal water cooling table in the growth process, so that the temperature of the diamond sample is increased or decreased, and the required growth temperature is accurately controlled; the sample support is arranged in a positioning groove on the internal water-cooling table and used for bearing the diamond sample and protecting the water-cooling table from being etched by the plasma.
The embedded water cooling table provided by the invention is used for regulating and controlling the surface temperature of a sample in the diamond growth process, so that the problem that the quality of diamond is reduced due to the fact that the growth temperature exceeds the upper limit of the process temperature range because the sample temperature is continuously increased along with the growth process can be avoided; real-time temperature regulation and control are carried out, the distribution state of the plasma is not influenced, growth interruption caused by shutdown for replacing a sample holder is avoided, and continuous growth capacity is improved; meanwhile, the growth temperature of the diamond is always kept in the optimal process interval, and the growth quality and the surface appearance of the diamond are improved.
Claims (10)
1. The embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single-crystal diamonds is characterized by comprising an outer water cooling table (1), an inner water cooling table (2), a sample holder (4) and two lifting motors, wherein the outer water cooling table (1) is of an integrated structure consisting of an outer table body (1-1) and a connector (1-2), a water cooling cavity is formed in the outer water cooling table (1), a concave cavity (1-3) is formed in the outer table body (1-1), and a through hole (1-4) is formed in the central axis of the connector (1-2);
the internal water cooling table (2) is of an integrated structure consisting of a water cooling table body (2-1) and a connecting rod (2-2), a sample support (4) is arranged on the water cooling table body (2-1), a water cooling cavity is formed inside the internal water cooling table (2), the water cooling table body (2-1) is located in the concave cavity (1-3), and the connecting rod (2-2) is sleeved in the through hole (1-4);
the first lifting motor (5) drives the outer water cooling table (1) to move up and down, and the second lifting motor (6) drives the inner water cooling table (2) to move up and down.
2. The embedded water-cooling table for the temperature-controlled continuous growth of large-particle MPCVD single-crystal diamond according to claim 1, is characterized in that a positioning groove (3) is arranged on the water-cooling table body (2-1).
3. The embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 2, is characterized in that the sample holder (4) is placed in the positioning groove (3).
4. The embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 1, is characterized in that the water cooling cavity of the inner water cooling table (2) and the water cooling cavity of the outer water cooling table (1) are both connected with a water cooling system.
5. The embedded water cooling table for temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 1, wherein the first lifting motor (5) and the second lifting motor (6) are both screw rod lifting motors.
6. The method for growing diamond by using the embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 1 is characterized in that the method is realized according to the following steps:
firstly, placing diamond seed crystals on a sample holder (4) of an inner water cooling table (2), and driving the inner water cooling table (2) to lift through a second lifting motor (6) so that the growth surface of the diamond seed crystals is flush with the upper surface of an outer water cooling table (1);
secondly, closing a hatch door of the MPCVD equipment by vacuumThe pump pumps the air pressure in the cabin to be lower than 5 x 10-5mbar, introducing 200-dose high-purity hydrogen with the flow rate of 500sccm, inputting 800W microwave for starting when the air pressure reaches 10-15mbar, driving the outer-layer water cooling platform (1) to lift through the first lifting motor (5), and adjusting the plasma state until the microwave reflection power is less than 100W;
thirdly, continuing to increase the air pressure and the microwave power until the temperature of the diamond sample reaches T ℃, and introducing methane to start to grow diamond crystals;
fourthly, when the actual temperature reaches 1.01T-1.02T ℃ in the growth process of the diamond crystal, the second lifting motor (6) is used for adjusting the internal water cooling table (2) to move, so that the diamond is far away from the plasma core, the temperature is reduced to T ℃ for temperature adjustment, the growth is continued, and the temperature adjustment process is repeated until the growth of the single crystal diamond is finished.
7. The method for growing diamond by using the embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 6, wherein the purity of the hydrogen in the second step is more than 99.99%.
8. The method for growing diamond by using the embedded water-cooling table for the temperature-controlled continuous growth of large-particle MPCVD single-crystal diamond according to claim 6, wherein the plasma state is adjusted in the second step until the microwave reflection power is 70-80W.
9. The method for growing diamond by using the embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single crystal diamond according to claim 6, wherein the temperature T of the diamond sample in the third step is in the range of 900 ℃ < T < 950 ℃.
10. The method for growing diamond by using the embedded water cooling table for the temperature-controlled continuous growth of large-particle MPCVD single-crystal diamond according to claim 6, wherein in the fourth step, when the actual temperature reaches 1.01T ℃ during the growth of diamond crystals, the movement of the internal water cooling table (2) is regulated by the second lifting motor (6).
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| CN202011393749.9A CN112647126A (en) | 2020-12-02 | 2020-12-02 | Embedded water cooling table for large-particle MPCVD single crystal diamond temperature-control continuous growth and application thereof |
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| CN202011393749.9A CN112647126A (en) | 2020-12-02 | 2020-12-02 | Embedded water cooling table for large-particle MPCVD single crystal diamond temperature-control continuous growth and application thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355746A (en) * | 2021-06-15 | 2021-09-07 | 上海昌润极锐超硬材料有限公司 | Deposition part and method for enlarging diamond seed crystal area |
| CN114032526A (en) * | 2021-11-10 | 2022-02-11 | 哈尔滨工业大学 | Integrated high-quality diamond MPCVD growth equipment without external raw material gas and growth method |
| CN114976559A (en) * | 2022-06-20 | 2022-08-30 | 深圳市恒运昌真空技术有限公司 | Microwave resonant cavity |
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| US20170114476A1 (en) * | 2008-03-13 | 2017-04-27 | Board Of Trustees Of Michigan State University | Process and Apparatus for Diamond Synthesis |
| CN106929828A (en) * | 2017-05-12 | 2017-07-07 | 中国工程物理研究院应用电子学研究所 | A kind of chip bench that diamond film is prepared for MPCVD method |
| CN108588819A (en) * | 2018-04-24 | 2018-09-28 | Fd3M公司 | The method of microwave plasma CVD device and diamond synthesis |
| CN111663119A (en) * | 2020-06-30 | 2020-09-15 | 四川三三零半导体有限公司 | TM022 mode microwave plasma reactor suitable for MPCVD |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20170114476A1 (en) * | 2008-03-13 | 2017-04-27 | Board Of Trustees Of Michigan State University | Process and Apparatus for Diamond Synthesis |
| CN106929828A (en) * | 2017-05-12 | 2017-07-07 | 中国工程物理研究院应用电子学研究所 | A kind of chip bench that diamond film is prepared for MPCVD method |
| CN108588819A (en) * | 2018-04-24 | 2018-09-28 | Fd3M公司 | The method of microwave plasma CVD device and diamond synthesis |
| CN111663119A (en) * | 2020-06-30 | 2020-09-15 | 四川三三零半导体有限公司 | TM022 mode microwave plasma reactor suitable for MPCVD |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355746A (en) * | 2021-06-15 | 2021-09-07 | 上海昌润极锐超硬材料有限公司 | Deposition part and method for enlarging diamond seed crystal area |
| CN114032526A (en) * | 2021-11-10 | 2022-02-11 | 哈尔滨工业大学 | Integrated high-quality diamond MPCVD growth equipment without external raw material gas and growth method |
| CN114976559A (en) * | 2022-06-20 | 2022-08-30 | 深圳市恒运昌真空技术有限公司 | Microwave resonant cavity |
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