CN117051471B - Device and method for growing silicon carbide crystal by liquid phase method - Google Patents
Device and method for growing silicon carbide crystal by liquid phase method Download PDFInfo
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- CN117051471B CN117051471B CN202311028451.1A CN202311028451A CN117051471B CN 117051471 B CN117051471 B CN 117051471B CN 202311028451 A CN202311028451 A CN 202311028451A CN 117051471 B CN117051471 B CN 117051471B
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- 239000013078 crystal Substances 0.000 title claims abstract description 99
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000007791 liquid phase Substances 0.000 title claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 238000004321 preservation Methods 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims description 74
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000005429 filling process Methods 0.000 claims description 2
- 239000007770 graphite material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
The invention provides a device and a method for growing silicon carbide crystals by a liquid phase method, and relates to the field of silicon carbide production. The crucible is arranged in the heat preservation cavity and is used for containing the silicon-containing melt. The seed rod penetrates through the lifting driving piece, and a seed crystal for growing silicon carbide crystals is arranged at the bottom of the seed rod and can be contacted with or separated from the silicon-containing melt under the driving of the seed rod. The device and the matched method can simply and conveniently adjust the heating effect on the crucible by arranging the heat preservation cavity with adjustable volume, thereby adjusting the growth rate of the crystal according to actual needs.
Description
Technical Field
The invention relates to the field of silicon carbide production, in particular to a device and a method for growing silicon carbide crystals by a liquid phase method.
Background
As a representative of the third generation semiconductor material, silicon carbide (SiC) has the characteristics of wide forbidden band, high breakdown electric field, high thermal conductivity, high saturated electron mobility and the like, so that the semiconductor device prepared by adopting the silicon carbide material is suitable for high voltage, high current, high temperature, high frequency and other scenes, and has very broad prospects.
Current processes for growing silicon carbide crystals mainly include Physical Vapor Transport (PVT), liquid Phase (LPE), chemical Vapor Deposition (CVD), etc., wherein the liquid phase process can produce large-sized crystals at relatively low cost. However, the conventional device for growing silicon carbide crystals by the liquid phase method generally has the problem that the heating effect of a crucible is inconvenient to adjust, so that the crystal growth rate cannot be adjusted according to the requirement.
Disclosure of Invention
The object of the present invention includes, for example, providing an apparatus and a method for growing silicon carbide crystals by a liquid phase method, which can simply and conveniently adjust the heating effect of a crucible, thereby allowing the crystal growth rate to be adjusted as desired.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides an apparatus for growing silicon carbide crystals by liquid phase method, comprising:
the heat insulation structure comprises a fixed heat insulation part, a lifting heat insulation part and a lifting driving part, wherein the lifting heat insulation part is arranged in the fixed heat insulation part in a lifting manner and forms a heat insulation cavity together with the inner wall of the fixed heat insulation part, and the lifting driving part is connected with the lifting heat insulation part and is used for driving the lifting heat insulation part to lift so as to adjust the volume of the heat insulation cavity;
the crucible is arranged in the heat preservation cavity and is used for containing silicon-containing melt;
the seed rod penetrates through the lifting driving piece, and a seed crystal for growing silicon carbide crystals is arranged at the bottom of the seed rod and can be contacted with or separated from the silicon-containing melt under the driving of the seed rod.
In an alternative embodiment, the lifting driving part comprises a lifting rod and a power source, the lower part of the lifting rod is connected with the lifting heat-preserving part, the lifting rod is provided with a position avoiding hole for the seed rod to penetrate through, and the power source is in transmission connection with the lifting rod and is used for driving the lifting rod to drive the lifting heat-preserving part to lift.
In an alternative embodiment, the clearance hole is in sliding engagement with the lifter.
In an alternative embodiment, the lifter bar and the seed rod are both graphite.
In an alternative embodiment, a boss is provided at the outer edge of the bottom end of the lifting rod, and the boss supports the bottom wall of the lifting heat-insulating member.
In an alternative embodiment, the lifting thermal insulation member is formed by stacking graphite paper or graphite felt.
In an alternative embodiment, the device further comprises a control device, wherein the control device is electrically connected with the lifting driving piece and used for controlling the lifting driving piece to drive the lifting heat preservation piece to lift.
In an alternative embodiment, the control device has a manual control mode in which the control device is configured to control the lifting drive according to a real-time command, and an automatic control mode in which the control device is configured to control the lifting drive according to a preset command.
In an alternative embodiment, the preset instructions include:
controlling the lifting driving piece to drive the lifting heat-preserving piece to rise at a first speed in a first time period after the silicon carbide crystal starts to grow;
and controlling the lifting driving piece to drive the lifting heat-preserving piece to descend at a second speed in a second time period before the silicon carbide crystal is grown.
In a second aspect, the present invention provides a method for growing silicon carbide crystals by liquid phase method, the apparatus for growing silicon carbide crystals by liquid phase method according to any one of the preceding embodiments, comprising:
vacuumizing the heat preservation cavity and then filling process gas;
controlling the seed rod to drive the seed crystal to descend so as to contact the silicon-containing melt;
heating the crucible to initiate growth of a silicon carbide crystal on the seed crystal;
controlling the seed rod to drive the seed crystal to gradually rise until the silicon carbide crystal is grown;
and controlling the lifting driving piece to drive the lifting heat preservation piece to lift in the process from the beginning to the ending of the growth of the silicon carbide crystal.
The beneficial effects of the embodiment of the invention include, for example:
the device for growing silicon carbide crystals by the liquid phase method comprises a heat insulation structure, a crucible and a seed rod, wherein the heat insulation structure comprises a fixed heat insulation part, a lifting heat insulation part and a lifting driving part, the lifting heat insulation part is arranged in the fixed heat insulation part in a lifting manner and forms a heat insulation cavity together with the inner wall of the fixed heat insulation part, and the lifting driving part is connected with the lifting heat insulation part and is used for driving the lifting heat insulation part to lift so as to adjust the volume of the heat insulation cavity. The crucible is arranged in the heat preservation cavity and is used for containing the silicon-containing melt. The seed rod penetrates through the lifting driving piece, and a seed crystal for growing silicon carbide crystals is arranged at the bottom of the seed rod and can be contacted with or separated from the silicon-containing melt under the driving of the seed rod. The device and the matched method can simply and conveniently adjust the heating effect on the crucible by arranging the heat preservation cavity with adjustable volume, thereby adjusting the growth rate of the crystal according to actual needs.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an apparatus for growing silicon carbide crystals by liquid phase method according to an embodiment of the present invention;
fig. 2 is a control block diagram of an apparatus for growing silicon carbide crystals by a liquid phase method according to an embodiment of the present invention.
Icon: 100-an insulation structure; 110-fixing the heat preservation piece; 120-lifting a heat preservation piece; 130-lifting drive; 132-lifting rod; 134-boss; 140-a heat preservation cavity; 200-crucible; 210-a silicon-containing melt; 300-seed crystal rod; 400-seed crystal; 500-control means; 600-input means; 700-heating structure.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
At present, an apparatus for growing silicon carbide crystals by a liquid phase method generally adopts inductive heating or resistive heating for heating a crucible. In either heating structure, once the heating current is constant, the heating effect on the crucible is also constant. However, the growth rate of silicon carbide crystals is related to the supply of raw materials (carbon source and silicon source) in addition to the heating effect. Generally, after the heating structure is started, the growth rate of the crystal is fast due to sufficient raw materials, and then gradually decreases, and the growth rate of the crystal is slow due to a large consumption of raw materials and the like in a period of time before the crystal growth is completed. It follows that a constant heating effect necessarily results in a crystal whose growth rate cannot be adjusted as desired, and thus in a crystal whose growth rate cannot be adjusted as desired.
In order to improve the situation, the invention provides a novel device and a novel method for growing silicon carbide crystals by a liquid phase method, and the device and the method for growing the silicon carbide crystals by the liquid phase method can simply and conveniently adjust the pressure in the heat preservation cavity by arranging the heat preservation cavity with adjustable volume so as to adjust the heating effect on a crucible and a silicon-containing melt in the crucible, thereby adjusting the growth rate of the crystals according to actual needs.
The overall structure, the working principle and the obtained technical effects of the device for growing silicon carbide crystals by the liquid phase method are described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and 2, the apparatus for growing silicon carbide crystals by the liquid phase method comprises a heat insulation structure 100, a crucible 200, a seed rod 300 and a heating structure 700.
The insulation structure 100 comprises a fixed insulation part 110, a lifting insulation part 120 and a lifting driving part 130, wherein the lifting insulation part 120 is arranged in the fixed insulation part 110 in a lifting manner and forms an insulation cavity 140 together with the inner wall of the fixed insulation part 110, and the lifting driving part 130 is connected with the lifting insulation part 120 and is used for driving the lifting insulation part 120 to lift so as to adjust the volume of the insulation cavity 140. Crucible 200 is disposed within holding chamber 140 for holding silicon-containing melt 210. The seed rod 300 is threaded through the lift drive 130 and a seed crystal 400 for growing silicon carbide crystals is provided at the bottom, the seed crystal 400 being capable of contacting or separating from the silicon-containing melt 210 under the drive of the seed rod 300. The heating structure 700 is provided at an outer side of the crucible 200 for heating the crucible 200. In detail, in the present embodiment, the heating structure 700 is an induction coil and is enclosed on the outer side of the heat insulation structure 100.
Wherein, the fixed thermal insulation member 110 is in a cylindrical shape with an opening at the top, the lifting thermal insulation member 120 is in a circular ring shape, the outer peripheral wall thereof is in sliding contact with the inner peripheral wall of the fixed thermal insulation member 110, and the inner peripheral wall is fixedly connected with the lifting driving member 130. The specific structures of the lifting thermal insulation member 120 and the fixing thermal insulation member 110 can be set according to needs, and in this embodiment, the lifting thermal insulation member and the fixing thermal insulation member are formed by stacking graphite paper or graphite felt.
The lifting driving member 130 may have various structures according to need, and in this embodiment, the lifting driving member 130 includes a lifting rod 132 and a power source (not shown). The lower portion of the elevating rod 132 is connected to the elevating heat-retaining member 120, and in detail, the elevating rod 132 has a cylindrical shape, and the outer peripheral wall of the lower portion thereof is fixedly connected, e.g., adhered, to the inner peripheral wall of the elevating heat-retaining member 120. In order to improve the connection stability of the lifting driving member 130 and ensure the normal operation of the lifting driving member 130, in this embodiment, a boss 134 is disposed at the outer edge (i.e., the outer peripheral wall) of the bottom end of the lifting rod 132, and the boss 134 is annular and supports the bottom wall of the lifting thermal insulation member 120. In other embodiments, the lifting rod 132 may be fixedly connected to the lifting thermal insulation member 120 through a connecting member without the boss 134.
Further, the lifting rod 132 is provided with a clearance hole through which the seed rod 300 passes, and the clearance hole is a cylindrical hole and extends from the top end to the bottom end of the lifting rod 132. In this embodiment, the avoidance hole is in sliding fit with the seed rod 300 (i.e. the aperture of the avoidance hole is slightly larger than that of the seed rod 300), so that the heat insulation effect of the heat insulation cavity 140 can be improved, heat leakage from a gap between the lifting rod 132 and the seed rod 300 can be avoided, and mutual interference between the lifting rod 132 and the seed rod 300 can be avoided, so that the lifting rod 132 and the seed rod 300 can move smoothly relatively independently. In addition, in order to facilitate the processing of the lifting rod 132 and the seed rod 300 to achieve sliding fit, the lifting rod and the seed rod are both made of graphite.
The power source is disposed above the thermal insulation structure 100 and is in transmission connection with the lifting rod 132, for driving the lifting rod 132 to drive the lifting thermal insulation member 120 to lift. Specific structures of the power source include, but are not limited to, oil cylinders, linear motors, winches and other power structures capable of providing lifting power. These power structures may be directly or indirectly coupled to the lifting bar 132 through a transmission structure to power the lifting of the lifting bar 132.
Further, in order to realize automatic control of growing silicon carbide crystals by the liquid phase method, in this embodiment, the apparatus for growing silicon carbide crystals by the liquid phase method further includes a control device 500 (a single-chip microcomputer, a PLC, etc.) and an input device 600 (a touch screen, etc.), where the control device 500 is electrically connected with the lifting driving member 130, the heating structure 700 and the input device 600 at the same time, and is used for controlling the lifting driving member 130 to drive the lifting heat preservation member 120 to lift and controlling the working condition of the heating structure 700 according to a real-time instruction input by a user through the input device 600 or a preset instruction prestored in the control device 500.
That is, the control device 500 has a manual control mode in which the control device 500 is used to control the elevation driving member 130 according to a real-time command, and an automatic control mode in which the control device 500 is used to control the elevation driving member 130 according to a preset command. The real-time command is input by the user through the input device 600 during the growth of the silicon carbide crystal, and the preset command is input and stored by the user through the input device 600 before the growth of the silicon carbide crystal.
The preset instructions may be set as required, and in this embodiment, the preset instructions include: controlling the lifting driving member 130 to drive the lifting heat insulating member 120 to rise at a first speed in a first time period after the silicon carbide crystal starts to grow; during a second time period before the silicon carbide crystal growth is completed, the lifting drive member 130 is controlled to drive the lifting heat insulating member 120 to descend at a second rate. The specific duration of the first time period and the second time period and the specific speed of the first speed and the second speed are set according to actual production experience and conditions.
As described above, in general, the growth rate of the silicon carbide crystal is faster in the early stage and slower in the later stage, and the lifting driving member 130 is controlled to drive the lifting insulating member 120 to gradually rise in the early stage of crystal growth to increase the volume of the insulating chamber 140, thereby reducing the pressure of the insulating chamber 140, further reducing the heating effect on the crucible 200 and reducing the growth rate of the silicon carbide crystal. And the lifting driving part 130 is controlled to drive the lifting heat preservation part 120 to gradually descend at the later stage of crystal growth so as to reduce the volume of the heat preservation cavity 140, thereby increasing the pressure of the heat preservation cavity 140, further improving the heating effect on the crucible 200 and improving the growth rate of the silicon carbide crystal, so that the growth rate in the growth process of the silicon carbide crystal is always stabilized in the most proper range, and further improving the growth quality of the silicon carbide crystal.
The device for growing silicon carbide crystals by the liquid phase method comprises a heat insulation structure 100, a crucible 200 and a seed rod 300, wherein the heat insulation structure 100 comprises a fixed heat insulation part 110, a lifting heat insulation part 120 and a lifting driving part 130, the lifting heat insulation part 120 is arranged in the fixed heat insulation part 110 in a lifting manner and forms a heat insulation cavity 140 together with the inner wall of the fixed heat insulation part 110, and the lifting driving part 130 is connected with the lifting heat insulation part 120 and is used for driving the lifting heat insulation part 120 to lift so as to adjust the volume of the heat insulation cavity 140. Crucible 200 is disposed within holding chamber 140 for holding silicon-containing melt 210. The seed rod 300 is threaded through the lift drive 130 and a seed crystal 400 for growing silicon carbide crystals is provided at the bottom, the seed crystal 400 being capable of contacting or separating from the silicon-containing melt 210 under the drive of the seed rod 300. By setting the thermal insulation cavity 140 with adjustable volume, the pressure intensity of the thermal insulation cavity 140 can be simply and conveniently adjusted, thereby adjusting the heating effect on the crucible 200, and further adjusting the growth rate of crystals according to actual needs.
The embodiment of the invention also provides a method for growing the silicon carbide crystal by the liquid phase method, which is based on the device for growing the silicon carbide crystal by the liquid phase method and specifically comprises the following steps:
step S100: the process gas is introduced after the evacuation of the soak chamber 140. The pressure in the holding chamber 140 is reduced to 5 x 10 after evacuation 6 Below mpar, the pressure in the holding chamber 140 is raised back to 1-800 mbar after filling with process gas. The process gas may be one or more of argon, nitrogen, hydrogen, helium, and the like.
Step S200: the seed rod 300 is controlled to drive the seed crystal 400 downward into contact with the liquid surface of the silicon-containing melt 210.
Step S300: crucible 200 is heated to initiate growth of a silicon carbide crystal on seed 400. The heating temperature is preferably 1500-2300 ℃, and after the crucible 200 is heated, the carbon source and the silicon source form silicon carbide crystals on the seed crystal 400, wherein the carbon source is generally the crucible 200 itself, and may also include graphite pieces (graphite rods, graphite blocks, etc.) additionally arranged in the crucible 200, and the silicon source is derived from the silicon-containing melt 210.
Step S400: the seed rod 300 is controlled to drive the seed crystal 400 to gradually rise until the silicon carbide crystal is grown. After the growth is completed, the seed rod 300 pulls out the silicon carbide crystal grown with the seed crystal 400, thereby obtaining the silicon carbide crystal.
In the process from the start of growth to the end of growth of the silicon carbide crystal, the lifting driving member 130 is controlled to drive the lifting heat preservation member 120 to lift so as to adjust the heating effect on the crucible 200 according to the requirement, thereby adjusting the growth rate of the silicon carbide crystal and realizing the control of the working condition in the growth process of the silicon carbide crystal. The specific control mode may refer to the foregoing, and will not be described herein.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. The device for growing the silicon carbide crystal by the liquid phase method comprises a heat insulation structure (100), a crucible (200), a seed rod (300) and a control device (500), wherein the heat insulation structure (100) comprises a fixed heat insulation part (110), a lifting heat insulation part (120) and a lifting driving part (130), the lifting heat insulation part (120) is arranged in the fixed heat insulation part (110) in a lifting manner and is surrounded with the inner wall of the fixed heat insulation part (110) to form a heat insulation cavity (140), and the lifting driving part (130) is connected with the lifting heat insulation part (120) and is used for driving the lifting heat insulation part (120) to lift so as to adjust the volume of the heat insulation cavity (140); the crucible (200) is arranged in the heat preservation cavity (140) and is used for containing a silicon-containing melt (210); the seed rod (300) penetrates through the lifting driving piece (130) and a seed crystal (400) for growing silicon carbide crystals is arranged at the bottom of the seed rod, and the seed crystal (400) can be contacted with or separated from the silicon-containing melt (210) under the driving of the seed rod (300); the control device (500) is electrically connected with the lifting driving piece (130) and is used for controlling the lifting driving piece (130) to drive the lifting heat-preserving piece (120) to lift; the control device (500) has a manual control mode and an automatic control mode, and is characterized by comprising:
vacuumizing the heat preservation cavity (140) and then filling process gas;
controlling the seed rod (300) to drive the seed crystal (400) to descend so as to be in contact with the silicon-containing melt (210);
heating the crucible (200) to initiate growth of a silicon carbide crystal on the seed crystal (400);
controlling the seed rod (300) to drive the seed crystal (400) to gradually rise until the silicon carbide crystal is grown;
in the process of starting growth to finishing growth of the silicon carbide crystal, controlling the lifting driving member (130) to drive the lifting heat-preserving member (120) to lift, in the manual control mode, the control device (500) is used for controlling the lifting driving member (130) according to a real-time instruction, and in the automatic control mode, the control device (500) is used for controlling the lifting driving member (130) according to a preset instruction, wherein the preset instruction comprises:
controlling the lifting driving piece (130) to drive the lifting heat-preserving piece (120) to lift at a first speed in a first time period after the silicon carbide crystal starts to grow;
and controlling the lifting driving piece (130) to drive the lifting heat-preserving piece (120) to descend at a second speed in a second time period before the silicon carbide crystal is grown.
2. The method for growing silicon carbide crystals by a liquid phase method according to claim 1, wherein the lifting driving member (130) comprises a lifting rod (132) and a power source, the lower part of the lifting rod (132) is connected with the lifting heat-insulating member (120), the lifting rod (132) is provided with a clearance hole for the seed crystal rod (300) to penetrate through, and the power source is in transmission connection with the lifting rod (132) and is used for driving the lifting rod (132) to drive the lifting heat-insulating member (120) to lift.
3. The method of growing silicon carbide crystals as set forth in claim 2 wherein the clearance hole is a sliding fit with the lifter bar (132).
4. The method of growing silicon carbide crystals as set forth in claim 2, characterized in that the lifting rod (132) and the seed rod (300) are both graphite materials.
5. The method for growing silicon carbide crystals by liquid phase method according to claim 2, wherein a boss (134) is provided at the bottom end outer edge of the lifting rod (132), and the boss (134) supports the bottom wall of the lifting thermal insulation member (120).
6. The method for growing silicon carbide crystals by liquid phase method according to claim 1, wherein the lifting thermal insulation member (120) is formed by stacking graphite paper or graphite felt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202311028451.1A CN117051471B (en) | 2023-08-15 | 2023-08-15 | Device and method for growing silicon carbide crystal by liquid phase method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311028451.1A CN117051471B (en) | 2023-08-15 | 2023-08-15 | Device and method for growing silicon carbide crystal by liquid phase method |
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| CN117051471A CN117051471A (en) | 2023-11-14 |
| CN117051471B true CN117051471B (en) | 2024-03-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113005511A (en) * | 2021-02-23 | 2021-06-22 | 山东天岳先进科技股份有限公司 | Method and device for growing high-quality silicon carbide crystals |
| CN113718337A (en) * | 2021-09-03 | 2021-11-30 | 北京晶格领域半导体有限公司 | Device and method for growing silicon carbide crystals by liquid phase method |
| CN114481293A (en) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | Silicon carbide crystal growth device and silicon carbide crystal growth method |
| CN116163004A (en) * | 2022-12-20 | 2023-05-26 | 中国科学院物理研究所 | Device and method for growing silicon carbide crystal by liquid phase method |
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| CN113718337A (en) * | 2021-09-03 | 2021-11-30 | 北京晶格领域半导体有限公司 | Device and method for growing silicon carbide crystals by liquid phase method |
| CN114481293A (en) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | Silicon carbide crystal growth device and silicon carbide crystal growth method |
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