CN219202126U - Photoresist forming apparatus - Google Patents
Photoresist forming apparatus Download PDFInfo
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- CN219202126U CN219202126U CN202320015887.6U CN202320015887U CN219202126U CN 219202126 U CN219202126 U CN 219202126U CN 202320015887 U CN202320015887 U CN 202320015887U CN 219202126 U CN219202126 U CN 219202126U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a photoresist forming apparatus, wherein the photoresist forming apparatus includes a rotating chuck and a heat regulating apparatus; the rotary sucker is used for bearing a wafer and spin-coating an initial film layer on the surface of the borne wafer; the heat adjusting device is arranged on at least one side of the wafer and is used for adjusting the heated state of the photoresist. The photoresist obtained by the method has a smooth surface, and the photoresist is adopted to carry out subsequent photoetching and other processes, so that relevant process control can be accurately carried out, and the quality of the corresponding process is improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to photoresist forming equipment.
Background
Photolithography is an important process in semiconductor processes that can transfer a pattern on a reticle to a substrate by means of a photoresist under the influence of light. The course of the lithographic process may include: firstly, ultraviolet light irradiates the surface of a substrate covered with a layer of photoresist film through a mask plate to cause the photoresist in an exposure area to generate chemical reaction; then the photoresist in the exposed area or the unexposed area is dissolved and removed by a developing technology, so that the pattern on the mask plate is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology. The inventor finds that the photoresist in some processes has uneven problems in the research process, and the subsequent process control process is easy to influence, so that the quality of the photoetching process is influenced.
Disclosure of Invention
In view of this, the present application provides a photoresist forming apparatus to solve the problem that some photoresist in the process has unevenness, and the subsequent process control process is easily affected, thereby affecting the technical problem of the photolithography process quality.
The application provides a photoresist forming apparatus comprising a rotating chuck and a heat regulating apparatus;
the rotary sucker is used for bearing a wafer and spin-coating an initial film layer on the surface of the borne wafer;
the heat adjusting device is arranged on at least one side of the wafer and is used for adjusting the heated state of the photoresist.
Optionally, the thermal conditioning device includes a first conditioning device located above the wafer edge and a second conditioning device located below the wafer edge.
Optionally, the first conditioning apparatus and the second conditioning apparatus are symmetrical about the wafer.
Optionally, the photoresist forming apparatus further comprises a first light barrier on at least one side of the heat regulating apparatus; the first light barrier is used for blocking heat generated by the heat regulating device from radiating to an area except the edge of the wafer.
Optionally, the photoresist forming apparatus further comprises a baking apparatus; the baking equipment is arranged right above the rotary sucker and is used for baking the photoresist right above the rotary sucker.
Optionally, the heat adjusting device provides a first temperature environment for an edge area of the wafer, the baking device provides a second temperature environment for a middle area of the wafer, and the photoresist is heated uniformly in the first temperature environment and the second temperature environment.
Optionally, the photoresist forming apparatus further comprises a second light barrier disposed between the baking apparatus and the rotating chuck; the second light barrier is used for blocking part of heat entering the photoresist middle area.
Optionally, the heat regulating device comprises a heat generating module or a light emitting module.
The photoresist forming equipment provided by the application carries the wafer through the rotary sucker, at least one side of the wafer is provided with the thermal regulating equipment, the heated state of the photoresist is regulated through the thermal regulating equipment, the photoresist can be uniformly heated in the related process, the initial film layer can be uniformly and stably solidified into the corresponding photoresist, the surface of the finally obtained photoresist is smooth, the photoresist is adopted to carry out the subsequent photoetching and other processes, the related process control can be accurately carried out, and the quality of the corresponding process is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic illustration of a photoresist during investigation;
FIG. 2 is a schematic view of a photoresist forming apparatus according to an embodiment of the present application;
FIG. 3 is a schematic view of a photoresist forming apparatus according to another embodiment of the present application;
FIG. 4 is a schematic view of a photoresist forming apparatus according to another embodiment of the present application;
FIG. 5 is a schematic view of a photoresist forming apparatus according to another embodiment of the present application;
FIG. 6 is a schematic view of a photoresist forming apparatus according to another embodiment of the present application;
FIG. 7 is a schematic view of a photoresist forming apparatus according to another embodiment of the present application;
FIGS. 8a, 8b and 8c are schematic views illustrating a photoresist forming apparatus according to another embodiment of the present application;
FIG. 9 is a flow chart of a photoresist forming method according to an embodiment of the present application.
Detailed Description
The inventors studied a photoresist forming process including: and forming an initial film layer such as a spin coating layer on the surface of the wafer, and curing the initial film layer by means of baking and/or gas blowing to obtain the photoresist on the surface of the wafer. The inventor researches have found that the photoresist edge formed in the above manner is uneven, and specific reasons include that if the temperature of the rotating chuck carrying the wafer is higher than the ambient temperature, then the photoresist right above the chuck and the photoresist other than the edge of the chuck are prone to uneven heating, and these uneven heating problems easily cause the photoresist edge to be uneven, for example, as shown in fig. 1, the edge portion of the photoresist is lower than the middle portion thereof, which easily causes poor control effect of the subsequent process, thereby affecting the quality of the photolithography process.
To above-mentioned problem, this application bears the weight of the wafer through rotatory sucking disc, sets up thermal regulation equipment in at least one side of wafer, adjusts the state of being heated of photoresist through thermal regulation equipment, makes the photoresist can evenly be heated at relevant technological process, and initial rete can evenly and stably solidify into corresponding photoresist like this, and finally the photoresist surface that obtains is level, adopts above-mentioned photoresist to carry out processes such as follow-up photoetching, can carry out relevant process control accurately, promotes the quality of corresponding process.
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. The various embodiments described below and their technical features can be combined with each other without conflict.
A first aspect of the present application provides a photoresist forming apparatus, as shown with reference to fig. 2 and 3, comprising a spin chuck 110 and a heat regulating apparatus 130.
The spin chuck 110 is used for carrying a wafer 120, and spin-coating an initial film layer on the surface of the carried wafer 120, where the initial film layer is used for forming photoresist.
The heat adjusting device 130 is disposed on at least one side of the wafer 120, the heat adjusting device 130 is used for adjusting a heated state of the photoresist, so that the photoresist can be heated uniformly in a related process, and thus, an initial film layer can be cured uniformly and stably into a corresponding photoresist, at this time, a photoresist 140 as shown in fig. 4 can be obtained, the surface of the photoresist 140 is flat, and a subsequent photolithography process is performed by using the photoresist 140, so that a related process control can be performed accurately, and the quality of the corresponding process is improved.
According to the photoresist forming equipment, the wafer 120 is borne by the rotary sucker 110, the thermal regulating equipment 130 is arranged on at least one side of the wafer 120, the heated state of the photoresist is regulated by the thermal regulating equipment 130, so that the photoresist can be uniformly heated in the related process, the initial film layer can be uniformly and stably solidified into the corresponding photoresist, the surface of the finally obtained photoresist is flat, the photoresist is adopted for carrying out subsequent photoetching and other processes, the related process control can be accurately carried out, and the quality of the corresponding process is improved.
In one embodiment, the setting characteristics of the thermal adjustment device 130 may be set according to factors such as the thermal state adjustment requirements of the photoresist. Alternatively, as shown in fig. 2, a heat regulating device 130 may be provided on the upper side of the wafer 120 to make the structure of the photoresist forming apparatus relatively simple. Alternatively, the heat adjusting devices 130 may be disposed on the upper and lower sides of the wafer 120, as shown in fig. 3, where the heat adjusting devices 130 include a first adjusting device 131 disposed above the edge of the wafer 120 and a second adjusting device 132 disposed below the edge of the wafer 120, and this arrangement feature can adjust the heated state of the photoresist from the upper and lower sides of the wafer 120, respectively, so as to enhance the heat adjusting capability of the heat adjusting devices 130.
Optionally, as shown in fig. 3, the first adjusting device 131 and the second adjusting device 132 are symmetrical with respect to the wafer 120, so that the heated state of the surface film layer of the wafer 120 can be adjusted more accurately, and the quality of the obtained photoresist is further improved.
In one example, referring to fig. 5, the photoresist forming apparatus further includes a first light barrier 160 on at least one side of the heat regulating apparatus 130; the first light barrier 160 is configured to block heat generated by the heat adjusting device 130 from being directed to an area other than the edge of the wafer 120, that is, to block heat generated by the heat adjusting device 130 from being directed to a middle area of the wafer 120, so as to prevent heat generated by the heat adjusting device 130 from interfering with other processes, so that each process performed simultaneously or sequentially is independent, and each process quality can be ensured.
In one embodiment, referring to fig. 6, the photoresist forming apparatus further comprises a baking apparatus 150; the baking device 150 is disposed directly above the rotary chuck 110, and is used for baking the photoresist 140 directly above the rotary chuck 110, so that the photoresist 140 can be correspondingly baked during the processes of forming, exposing and/or developing.
In one example, the heat adjusting device 130 provides a first temperature environment for the edge region of the wafer 120, the baking device 150 provides a second temperature environment for the middle region of the wafer 120, and the photoresist 140 is uniformly heated in the first temperature environment and the second temperature environment, so that the initial film layer can be cured more stably, and the photoresist 140 with a flat surface is obtained. The edge region of the wafer 120 includes a region in which the heating amount adjusting device 130 adjusts the heating state, and the middle region of the wafer 120 includes a region within the edge region thereof.
In one example, referring to fig. 7, the photoresist forming apparatus further includes a second light barrier 170 provided between the baking apparatus 150 and the spin chuck 110; the second light barrier 170 is configured to block part of heat entering the middle region of the photoresist 140, so that the middle region and the edge region of the photoresist 140 are heated uniformly, and the capability of adjusting the heated state of each region of the photoresist 140 is further improved.
In one embodiment, the type of thermal conditioning device 130 may be determined based on the thermal requirements of the wafer 120 and its surface film layers. In one example, the heat adjustment device 130 may include a heat generating module that may emit heat toward an edge region of the wafer 120 to adjust a heated state of the edge region of the wafer 120. In another example, the heat adjusting apparatus 130 may include a light emitting module that emits light toward an edge region of the wafer 120, and the light may be used to adjust a heated state of the edge region of the wafer 120.
In one example, the light emitting module may be disposed on at least one of the upper and lower sides of the wafer. Alternatively, referring to fig. 8a, a light emitting module 130a may be disposed on the upper side of the wafer 120 to emit light toward an edge region of the upper surface of the wafer 120. Alternatively, as shown in fig. 8b, the upper and lower sides of the wafer 120 may be respectively provided with light emitting modules, such as the light emitting module 131a disposed on the upper side of the wafer 120 to emit light to the edge region of the upper surface of the wafer 120, and the light emitting module 132a disposed on the lower side of the wafer 120 to emit light to the edge region of the bottom surface of the wafer 120.
Optionally, first light barriers may be disposed on both sides of the light emitting module, so as to block light generated by the light emitting module from being emitted to an area other than the edge of the wafer 120. For example, referring to fig. 8c, the first light barrier 161 may be disposed at both sides of the light emitting module 131a, and the first light barrier 162 may be disposed at both sides of the light emitting module 132 a.
The photoresist forming equipment carries the wafer 120 through the rotary sucker 110, the thermal regulating equipment 130 is arranged on at least one side of the wafer 120, the heated state of the photoresist is regulated through the thermal regulating equipment 130, so that the photoresist can be uniformly heated in the related process, the initial film layer can be uniformly and stably solidified into the corresponding photoresist, the surface of the finally obtained photoresist is flat, the photoresist is adopted for carrying out the subsequent photoetching and other processes, the related process control can be accurately carried out, and the quality of the corresponding process is improved.
A second aspect of the present application provides a photoresist forming method, which can be applied to the photoresist forming apparatus described in any one of the above embodiments. Referring to fig. 9, the photoresist forming method includes steps S210 and S220.
S210, the wafer 20 is adsorbed on the surface of the rotary chuck 10.
S210, spin-coating an initial film layer on the surface of the adsorbed wafer 120, and adjusting the heated state of at least the edge area of the surface of the wafer 20 to form photoresist.
Specifically, in the step S210, the heated state of at least the edge area of the surface of the photoresist may be adjusted by the heat adjusting device 130, so that the photoresist may be heated uniformly during the related process, and thus the initial film layer may be cured uniformly and stably into the corresponding photoresist, at this time, the photoresist 140 as shown in fig. 4 may be obtained, the surface of the photoresist 140 is flat, and the subsequent photolithography and other processes are performed by using the photoresist 140, so that the related process control may be performed accurately, and the quality of the corresponding process may be improved
In one embodiment, the adjusting the heated state of at least an edge region of the wafer surface includes: the heated states of the upper surface edge region and the lower surface edge region of the wafer 120 are respectively adjusted so that the edge region and the middle region of the wafer 120 are uniformly heated. Specifically, in this embodiment, a first adjusting device 131 may be disposed above the edge of the wafer 120, a second adjusting device 132 may be disposed below the edge of the wafer 120, the heated state of the edge region of the upper surface of the wafer 120 may be adjusted by the first adjusting device 131, and the heated state of the edge region of the lower surface of the wafer 120 may be adjusted by the second adjusting device 132, so that the edge regions and the middle region of each surface of the wafer 120 may be heated uniformly, so that the surface of the finally formed photoresist may be flat.
In one embodiment, the thermal conditioning apparatus provides a first temperature environment for an edge region of the wafer.
The photoresist forming method further comprises the steps of: and starting the baking equipment 150 right above the wafer 120, so that the baking equipment 150 provides a second temperature environment for the middle area of the wafer 120, the photoresist 140 on the surface of the wafer 120 is uniformly heated in the first temperature environment and the second temperature environment, the process quality corresponding to the photoresist 140 and related film layers is improved, for example, the initial film layer can be cured more stably in the uniformly heated state, and the surface of the obtained photoresist 140 is smoother.
In one embodiment, the photoresist forming method further comprises: before spin coating the initial film layer, baking the wafer 120, and at least adjusting a heated state of an edge area of the wafer 120, so that the whole wafer 120 is heated uniformly, and after the initial film layer is coated on the surface of the wafer 120, the initial film layer can be in a uniformly heated state, so that the curing effect of the initial film layer can be improved, and the quality of the formed photoresist is improved.
In one embodiment, the photoresist forming method further comprises: before the photoresist is exposed, at least the heated state of the edge area of the wafer is regulated so as to uniformly heat the photoresist on the surface of the wafer, so that the temperature environment in the photoresist exposure process is relatively stable, and the quality of exposure treatment can be improved.
In one embodiment, the photoresist forming method further comprises: after the photoresist is exposed, at least the heated state of the edge area of the wafer is regulated so as to uniformly heat the photoresist on the surface of the wafer, so that the temperature environments of various processes after the photoresist is exposed are relatively stable, and the corresponding process quality can be improved.
The photoresist forming method can be applied to the photoresist forming apparatus according to any of the above embodiments, and has all the advantages of the photoresist forming apparatus according to any of the above embodiments, which are not described herein.
Although the application has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. This application is intended to cover all such modifications and variations, and is limited only by the scope of the appended claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification.
That is, the foregoing embodiments are merely examples of the present application, and are not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application, such as the combination of technical features of the embodiments, or direct or indirect application to other related technical fields, are included in the scope of the patent protection of the present application.
In addition, the terms "first," "second," are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The previous description is provided to enable any person skilled in the art to make or use the present application. In the above description, various details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known processes have not been described in detail in order to avoid unnecessarily obscuring the description of the present application. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
Claims (8)
1. A photoresist forming apparatus, characterized in that the photoresist forming apparatus comprises a rotating chuck and a heat regulating apparatus;
the rotary sucker is used for bearing a wafer and spin-coating an initial film layer on the surface of the borne wafer;
the heat adjusting device is arranged on at least one side of the wafer and is used for adjusting the heated state of the photoresist.
2. The photoresist forming apparatus of claim 1, wherein the thermal conditioning apparatus comprises a first conditioning apparatus located above the wafer edge and a second conditioning apparatus located below the wafer edge.
3. The photoresist forming apparatus of claim 2, wherein the first and second conditioning apparatuses are symmetrical about the wafer.
4. The photoresist forming apparatus according to claim 2, further comprising a first light barrier on at least one side of the heat regulating apparatus;
the first light barrier is used for blocking heat generated by the heat regulating device from radiating to an area except the edge of the wafer.
5. The photoresist forming apparatus according to claim 2, wherein the photoresist forming apparatus further comprises a baking apparatus;
the baking equipment is arranged right above the rotary sucker and is used for baking the photoresist right above the rotary sucker.
6. The photoresist forming apparatus according to claim 5, wherein the heat adjusting apparatus provides a first temperature environment for an edge region of the wafer, the baking apparatus provides a second temperature environment for a middle region of the wafer, and the photoresist is brought into a uniformly heated state in the first temperature environment and the second temperature environment.
7. The photoresist forming apparatus of claim 5, further comprising a second light barrier disposed between the bake apparatus and the spin chuck;
the second light barrier is used for blocking part of heat entering the photoresist middle area.
8. The photoresist forming apparatus according to claim 1, wherein the heat adjusting apparatus comprises a heat generating module or a light emitting module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320015887.6U CN219202126U (en) | 2023-01-04 | 2023-01-04 | Photoresist forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320015887.6U CN219202126U (en) | 2023-01-04 | 2023-01-04 | Photoresist forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219202126U true CN219202126U (en) | 2023-06-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320015887.6U Active CN219202126U (en) | 2023-01-04 | 2023-01-04 | Photoresist forming apparatus |
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| CN (1) | CN219202126U (en) |
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- 2023-01-04 CN CN202320015887.6U patent/CN219202126U/en active Active
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