CN218830779U - Micro blind buried hole interconnection conduction structure - Google Patents

Micro blind buried hole interconnection conduction structure Download PDF

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Publication number
CN218830779U
CN218830779U CN202222933441.XU CN202222933441U CN218830779U CN 218830779 U CN218830779 U CN 218830779U CN 202222933441 U CN202222933441 U CN 202222933441U CN 218830779 U CN218830779 U CN 218830779U
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layer
buried
blind
micro
hole
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陈业跃
金义聪
陈志宇
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Tongyuan Technology Huizhou Co ltd
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Tongyuan Technology Huizhou Co ltd
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Abstract

The utility model discloses a micro blind buried hole interconnection conduction structure, which relates to the technical field of printed circuit board processing, and comprises a multilayer board structure, a through hole and a micro blind buried hole; multilayer board structure: the laminated core board is formed by laminating vertical laminated boards, wherein each laminated board comprises a first layer, a second layer, a core board, a fifth layer and a sixth layer, and adjacent laminated boards are connected through a bonding layer in a hot-pressing mode; the core plate comprises a base material plate, a third layer and a fourth layer which are formed on two surfaces of the base material plate; through holes: six metal layers of the first layer, the second layer, the third layer, the fourth layer, the fifth layer and the sixth layer are communicated in a penetrating manner; wherein: two adjacent metal layers are connected and conducted through the micro blind and buried holes, each micro blind and buried hole is arranged in a staggered mode, and an interconnected metal conduction layer is arranged in the wall of each micro blind and buried hole. The miniature blind buried hole interconnection switches on the structure, realizes between the panel connection and switches on the basis on, and the harmomegathus management and control is accurate, and the production degree of difficulty is low.

Description

Micro blind buried hole interconnection conduction structure
Technical Field
The utility model relates to a printed circuit board processing technology field specifically is a miniature blind buried via interconnection conduction structure.
Background
With the smaller and smaller electronic products and more functions, the existing circuit control board is designed by stacking mechanical blind drills and micro through holes (less than or equal to 0.1 mm), the difficulty of the manufacturing process of stacking and micro holes (less than or equal to 0.1 mm) of the products is very high, and the existing method is difficult to meet the requirements of customers. The main reason lies in if the unable accurate management and control of harmomegathus in the many core plate manufacturing process, it is specific, the through-hole of miniature hole (be less than or equal to 0.1 mm) bores the board thickness of 0.8mm, prior art adopts the mode of positive and negative deep drilling to realize the processing of this kind of high thickness-diameter ratio micropore, nevertheless because the rotational speed and the precision of existing equipment can't satisfy, the offset of two times drilling coincidence department is difficult to control within 25 mu m, lead to high thickness-diameter ratio micropore reliability problems such as uneven on the metallization process copper, hole copper resistance value is unusual easily, seriously influence signal transmission's integrality, for this reason, we provide a miniature blind buried hole interconnection conducting structure.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to overcome current defect, provide a miniature blind buried hole interconnection conduction structure, realize the connection between the panel and on switching on the basis, the harmomegathus management and control is accurate, and the production degree of difficulty is low, can effectively solve the problem in the background art.
In order to achieve the above object, the utility model provides a following technical scheme: a micro blind buried via interconnection structure comprises a multilayer plate structure and a through hole;
multilayer board structure: the laminated core board is formed by laminating vertical laminated boards, wherein each laminated board comprises a first layer, a second layer, a core board, a fifth layer and a sixth layer, and adjacent laminated boards are connected through a bonding layer in a hot-pressing mode;
the core plate comprises a base material plate, a third layer and a fourth layer which are formed on two surfaces of the base material plate;
through holes: six metal layers of the first layer, the second layer, the third layer, the fourth layer, the fifth layer and the sixth layer are communicated in a penetrating manner;
wherein: two adjacent metal layers are connected and conducted through the miniature blind and buried holes, each miniature blind and buried hole is arranged in a staggered mode, and the wall of each miniature blind and buried hole is internally provided with an interconnected metal conduction layer.
Furthermore, THE first layer, THE second layer, THE fifth layer and THE sixth layer are respectively formed by pressing four copper foils, and THE copper foils are high-temperature high-ductility THE copper foils with THE thickness of 1.0 oz.
Furthermore, the miniature blind buried hole comprises at least 1 miniature blind hole respectively connected with a layer one and a layer two, a layer five and a layer six, miniature buried holes respectively connected with a layer two and a layer three, a layer four and a layer five, and central miniature buried holes arranged on a layer three and a layer four and corresponding to circuit pads of a layer three and a layer four circuit.
Further, the thickness of the base material plate is 0.1-0.25 mm, and the thicknesses of the third layer and the fourth layer on the two surfaces of the base material plate are 17 micrometers.
Further, the bonding layer is 1080 prepreg.
Further, the thickness of the metal conduction layer is 15 μm.
Furthermore, the micro blind buried holes are laser holes, and insulators are filled in the laser holes respectively.
Compared with the prior art, the beneficial effects of the utility model are that: this miniature blind buried via interconnection conducting structure has following benefit:
according to the micro blind buried hole interconnection conduction structure, the requirement of multiple core plates is met by adopting a mode of laminating multiple copper foils, the coefficient only needs to control the expansion and contraction of one core plate, and the production and manufacturing difficulty is effectively reduced; meanwhile, the traditional mechanical micro through holes are replaced by a laser blind buried hole layer-by-layer interconnection and conduction mode, the metallization process is simple, the thickness controllability is strong, and the reliability problems of uneven copper, abnormal hole copper resistance value and the like in the metallization process are solved; the scheme has simple production and manufacturing process, can effectively ensure the product quality, reduces the production cost, and is suitable for processing various circuit boards with high thickness-diameter ratio and needing to be conducted through mechanical micropores.
Drawings
Fig. 1 is an exploded view of the present invention.
In the figure: 1 layer I, 2 layers II, 3 layers III, 4 layers IV, 5 layers V, 6 layers VI, 7 bonding layers, 8 base material plates, 9 through holes, 10 micro blind holes, 11 micro buried holes, 12 central micro buried holes, 13 metal conduction layers and 14 insulators.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, the present embodiment provides a technical solution: a micro blind buried via interconnection structure comprises a multilayer plate structure and a through hole 9;
multilayer board structure: the laminated core board is formed by laminating vertical laminated boards, wherein the laminated layers comprise a first layer 1, a second layer 2, a core board, a fifth layer 5 and a sixth layer 6, and adjacent laminated layers are connected through a bonding layer 7 in a hot-pressing mode;
splitting a stack of a plurality of core plates and mechanical blind holes and micro holes (less than or equal to 0.1 mm) which are designed in the prior art, specifically, obtaining the expansion and contraction coefficient of each core plate by a plurality of tests of a plurality of originally designed core plates, changing the plurality of core plates into one core plate, meeting the requirement of the plurality of core plates in a pressing mode, and controlling the coefficient by one core plate;
the bonding layer 7 is a 1080 prepreg;
the core plate comprises a base material plate 8, and a layer three 3 and a layer four 4 which are formed on two surfaces of the base material plate 8;
the thickness of the base material plate 8 is 0.1-0.25 mm, and the thicknesses of the layer three 3 and the layer four 4 on the two surfaces of the base material plate 8 are 17 micrometers;
through hole 9: six metal layers which penetrate through the first connecting layer 1, the second connecting layer 2, the third connecting layer 3, the fourth connecting layer 4, the fifth connecting layer 5 and the sixth connecting layer 6;
THE first layer 1, THE second layer 2, THE fifth layer 5 and THE sixth layer 6 are respectively formed by pressing four copper foils, and THE copper foils are high-temperature high-ductility THE copper foils with THE thickness of 1.0 oz;
wherein: two adjacent metal layers are connected and conducted through the micro blind and buried holes, each micro blind and buried hole is arranged in a staggered mode, and an interconnected metal conducting layer 13 is arranged in the wall of each micro blind and buried hole;
the method comprises the following steps of splitting a micro hole (less than or equal to 0.1 mm) of a through hole into a micro buried hole 11 and a micro blind hole 10 which are in staggered butt joint, wherein the micro buried hole 11 is connected by laser butt joint from top to bottom, so that the problem that a core plate is too thick and cannot be directly subjected to laser drilling is solved, the positions of the micro buried hole 11 and the central micro buried hole 12 are adjusted under the condition of ensuring the function, and the sufficient safety distance between the micro buried hole 11 and the micro blind hole 10 to be in butt joint is ensured;
the micro blind buried hole comprises at least 1 micro blind hole 10 respectively connected with a layer I1 and a layer II 2, a layer five 5 and a layer six 6, a micro buried hole 11 respectively connected with a layer II 2 and a layer III 3, a layer IV 4 and a layer V5, and a central micro buried hole 12 which is arranged on the layer III 3 and the layer IV 4 and corresponds to a circuit pad of the circuit layer III 3 and the layer IV 4;
specifically, micro holes (less than or equal to 0.1 mm) of all the metal layers are disassembled into holes of a layer one-layer two, a layer two-layer three, a layer three-layer four, a layer four-layer three, a layer five-layer four and a layer five-layer six, which are connected layer by layer. The three-layer four and the four-layer three are butted to form the central micro buried hole 12, the hole positions of other layers are staggered, the distance between holes is ensured, and poor connection and conduction are avoided. Meanwhile, circuit pads are added to the split layer three-layer four and layer four-layer three buried holes on the corresponding layer three and layer four circuit layers, and the connection of the pads and other layers is not influenced, and the overall function is consistent with the original design;
the thickness of the metal conduction layer 13 is 15 μm;
the micro blind buried holes are laser holes, and insulators 14 are filled in the laser holes respectively;
the originally designed mechanical blind holes of the layer one-layer two are changed into laser holes according to the hole size area proportion, for example, one 0.2mm Kong Gaicheng with two 0.1mm is produced, the connection area is consistent with the original requirement of a customer, the function is unchanged, the manufacturing simplified process flow can be achieved, and the cost is reduced.
The structure of current multilayer core, though only the pressfitting once, the big cost height of the complicated degree of difficulty of flow, the unable effective management and control of harmomegathus coefficient of three cores leads to the unable little hole (less than or equal to 0.1 mm) scheduling problem of boring of off normal and mechanical hole, like above-mentioned adjustment structure and after changing into laser drilling, harmomegathus coefficient can effective management and control, and laser drilling dislocation butt joint guarantees that customer's original design function is unchangeable, satisfies product batch production, and the quality can promote moreover.
The above is only the embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures or equivalent processes of the present invention can be used in other related technical fields, directly or indirectly, or in the same way as the present invention.

Claims (7)

1. A miniature blind buried via interconnection structure is characterized in that: comprises a multilayer plate structure and a through hole (9);
multilayer board structure: the laminated core is formed by laminating vertical laminated plates, wherein each laminated layer comprises a first layer (1), a second layer (2), a core plate, a fifth layer (5) and a sixth layer (6), and adjacent laminated layers are connected through a bonding layer (7) in a hot-pressing mode;
the core plate comprises a base material plate (8) and a layer three (3) and a layer four (4) which are formed on two surfaces of the base material plate (8);
through-hole (9): six metal layers which penetrate through the first communicating layer (1), the second communicating layer (2), the third communicating layer (3), the fourth communicating layer (4), the fifth communicating layer (5) and the sixth communicating layer (6);
wherein: two adjacent metal layers are connected and conducted through the micro blind and buried holes, each micro blind and buried hole is arranged in a staggered mode, and an interconnected metal conduction layer (13) is arranged in the wall of each micro blind and buried hole.
2. The micro blind buried via interconnect via structure of claim 1, wherein: THE first layer (1), THE second layer (2), THE fifth layer (5) and THE sixth layer (6) are respectively formed by pressing four copper foils, and THE copper foils are high-temperature high-ductility THE copper foils with THE thickness of 1.0 oz.
3. The micro blind and buried via interconnect structure of claim 1, wherein: the miniature blind buried hole comprises at least 1 miniature blind hole (10) which is respectively connected with a layer I (1), a layer II (2), a layer five (5) and a layer six (6), miniature buried holes (11) which are respectively connected with the layer II (2), the layer III (3), the layer IV (4) and the layer five (5), and central miniature buried holes (12) which are arranged on the layer III (3) and the layer IV (4) and correspond to circuit layer circuit pads of the layer III (3) and the layer IV (4).
4. The micro blind buried via interconnect via structure of claim 1, wherein: the thickness of the base material plate (8) is 0.1-0.25 mm, and the thicknesses of the third layer (3) and the fourth layer (4) on the two surfaces of the base material plate (8) are 17 micrometers.
5. The micro blind buried via interconnect via structure of claim 1, wherein: the bonding layer (7) is a 1080 prepreg.
6. The micro blind buried via interconnect via structure of claim 1, wherein: the thickness of the metal conduction layer (13) is 15 mu m.
7. The micro blind buried via interconnect via structure of claim 1, wherein: the micro blind buried holes are laser holes, and insulators (14) are filled in the laser holes respectively.
CN202222933441.XU 2022-11-04 2022-11-04 Micro blind buried hole interconnection conduction structure Active CN218830779U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222933441.XU CN218830779U (en) 2022-11-04 2022-11-04 Micro blind buried hole interconnection conduction structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222933441.XU CN218830779U (en) 2022-11-04 2022-11-04 Micro blind buried hole interconnection conduction structure

Publications (1)

Publication Number Publication Date
CN218830779U true CN218830779U (en) 2023-04-07

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ID=87040690

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222933441.XU Active CN218830779U (en) 2022-11-04 2022-11-04 Micro blind buried hole interconnection conduction structure

Country Status (1)

Country Link
CN (1) CN218830779U (en)

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