CN218548442U - Large-area high-position-resolution ultra-pure high-resistance silicon pixel detector - Google Patents

Large-area high-position-resolution ultra-pure high-resistance silicon pixel detector Download PDF

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CN218548442U
CN218548442U CN202221912280.XU CN202221912280U CN218548442U CN 218548442 U CN218548442 U CN 218548442U CN 202221912280 U CN202221912280 U CN 202221912280U CN 218548442 U CN218548442 U CN 218548442U
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silicon
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路顺茂
赵珍阳
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Shandong Dongyi Photoelectric Instruments Co ltd
Yantai Dongyi Optoelectronic Industrial Technology Research Institute Co ltd
Shandong Optical Detector Semiconductor Technology Co ltd
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Shandong Dongyi Photoelectric Instruments Co ltd
Yantai Dongyi Optoelectronic Industrial Technology Research Institute Co ltd
Shandong Optical Detector Semiconductor Technology Co ltd
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Abstract

The utility model discloses a large-area high-position-resolution ultra-pure high-resistance silicon pixel detector, which comprises a regular quadrangular prism-shaped silicon substrate, wherein a square central anode is etched on the upper bottom surface of the silicon substrate, a square central cathode is etched in the middle of the lower bottom surface of the silicon substrate, the central anode is overlapped with the center of the central cathode, and a silicon dioxide substrate is arranged outside the central cathode; the upper and lower collecting cathodes and the anodes of the silicon pixel detector are similar to a parallel plate capacitor, the optimal wafer thickness can be obtained by using a calculation method of the parallel plate capacitor, the fully-depleted voltage of the structure is lower, the probability that a chip is broken down by bias voltage is reduced, the electrode process difficulty is reduced, the chip yield is high, the workload of an external circuit is reduced, the packaging difficulty is reduced, the structure is simple, and the chip process manufacturing and external packaging are facilitated.

Description

Large-area high-position-resolution ultra-pure high-resistance silicon pixel detector
Technical Field
The utility model belongs to the technical field of medical science is surveyed, a ultrapure high resistant silicon pixel detector of large tracts of land high position resolution ratio is related to.
Background
The conventional detector is widely applied to the fields of high-energy physics, celestial body physics, aerospace, military, medicine and the like, and medical conditions in the medical field have strict requirements on the detector, namely higher position resolution, and have different requirements on the splicing area of a detector array; traditional silicon drift detector has a lot of weak points, and the position resolution ratio of at first traditional silicon drift detector unit can not reach the precision that the medical field required, and the regional definition of detector formation is not high, and traditional silicon drift detector is because the design problem, and the concatenation area is not big enough, and the position resolution ratio that causes whole detector is lower, needs to improve the detector structure in proper order urgently to satisfy medical user demand.
At present silicon pixel detector is in the design process, calculates the size that reachs wanting through simulation software, and it is single to go out to take a place, needs the test performance after making the detector device, if the charge collection rate, probably has the deviation with analog computation, later need readjust simulation parameter, makes the detector device again, and the design process is loaded down with trivial details, and is consuming time longer, and can't make accurate judgement to its charge collection rate before the detector is made, and it is less only to judge its charge collection rate in the aspect of the structure, the utility model discloses a design method can verify analog computation, discovers the problem in advance, reduces repeated preparation to simplify the design process.
SUMMERY OF THE UTILITY MODEL
In order to realize the purpose, the utility model provides a large tracts of land high position resolution ratio ultrapure high resistance silicon pixel detector has solved current detector position resolution ratio not high, the not big problem of array concatenation.
The utility model discloses the technical scheme who adopts is, a ultrapure high resistant silicon pixel detector of large tracts of land high position resolution, a serial communication port, including the silicon matrix of regular quadrangular prism form, the bottom surface sculpture has the central anode of square on the silicon matrix, and the central cathode of sculpture square in the middle of the bottom surface under the silicon matrix, central anode overlaps with the center of central cathode, and the central cathode outside is equipped with the silica base member.
Furthermore, the length and width of the central anode is 150 μm × 150 μm × 20 μm, the length and width of the central cathode is 80 μm × 80 μm × 20 μm, and the vertical distance between the central anode and the central cathode is 260 μm.
Furthermore, the silicon substrate is N-type lightly doped silicon, the central anode is N-type heavily doped silicon, and the central cathode is P-type heavily doped silicon.
Further, the doping concentration of the silicon substrate is 8 multiplied by 10 11 cm -3 ～1×10 12 cm -3 The doping concentration of the central anode and the central cathode are both 8 multiplied by 10 18 cm -3 ～1×10 19 cm -3 。
The beneficial effects of the utility model are that, the utility model provides a detector structure collects the negative pole positive pole from top to bottom and is similar to the parallel plate condenser, and characteristics are external encapsulation workable. Its full exhaust voltage is lower, has reduced the probability that the chip was punctured by the bias voltage, and chip yield is high, has reduced external circuit work load, has reduced the encapsulation degree of difficulty, the utility model discloses detector simple structure, easily chip technology makes and external encapsulation.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is an array diagram of a detector.
Fig. 2 is a perspective view of the detection unit.
Fig. 3 is a front view of the detection unit.
Fig. 4 is a diagram of the detector unit versus the gravity field.
Fig. 5 is a graph of the variation of the sectional potential of fig. 4.
Fig. 6 is a detector potential distribution diagram.
Figure 7 is a graph of detector full depletion voltage.
In the figure, 1 is a central anode, 2 is a silicon substrate, 3 is a central cathode, and 4 is a silicon dioxide substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
A large-area high-position-resolution ultra-pure high-resistance silicon pixel detector is structurally shown in figure 1 and formed by splicing a plurality of detection unit arrays, the detection unit structures are shown in figures 2 and 3 and comprise a silicon substrate 2 in a regular quadrangular prism shape, a square central anode 1 is etched on the upper bottom surface of the silicon substrate 2, a square central cathode 3 is etched in the middle of the lower bottom surface of the silicon substrate 2, the central anode 1 is overlapped with the center of the central cathode 3, and a silicon dioxide substrate 4 is arranged on the outer side of the central cathode 3.
The upper and lower collecting cathodes and anodes of the structure are similar to a parallel plate capacitor, and the optimal wafer thickness can be obtained by using a calculation method of the parallel plate capacitor. If fig. 7 is the detector voltage graph that exhausts entirely, its lines are 4V, 6V, 8V, 10V, 12V respectively from the upper right corner to the lower left corner voltage in the picture, the utility model discloses the detector voltage that exhausts entirely is 8.5V, and the voltage that this structure exhausts entirely is lower, has reduced the probability that the chip was punctured by the bias voltage, has reduced the electrode technology degree of difficulty, and chip yield is high, has reduced external circuit work load, has reduced the encapsulation degree of difficulty, and its simple structure easily chip technology makes and external encapsulation.
The utility model is used for the medical field need not to consider that N type material produces the transition effect of space charge type easily under strong radiation, chooses N type lightly doped silicon for use as silicon substrate 2, and its doping concentration is 8X 10 11 cm -3 ～1×10 12 cm -3 The central anode 1 is N-type heavily doped silicon, the central cathode 3 is P-type heavily doped silicon, and the doping concentrations of the central anode 1 and the central cathode 3 are both 8 multiplied by 10 18 cm -3 ～1×10 19 cm -3 In the detection process, the central anode 1 is used for providing electron carriers, the central cathode 3 is used for providing hole carriers, the length, width and height of the detection unit are respectively 150 μm × 150 μm × 300 μm, the smaller the surface area of the top electrode is, the smaller the capacitance is, the utility model discloses reduce the anode electrode area, wherein the length, width and height of the central anode 1 is 150 μm × 150 μm × 20 μm, the length, width and height of the central cathode 3 is 80 μm × 80 μm × 20 μm, the central anode 1 and the central cathode 3 are used as carrier collecting electrodes, the oversize or undersize of the central anode 1 and the central cathode 3 can increase the process difficulty in the production process, if the collecting surface is adopted, the carrier collecting efficiency is influenced, namely, all excited carriers cannot be collected, and the chip sensitivity is influenced if the carrier collecting efficiency is reduced; the vertical distance between the central anode 1 and the central cathode 3 is 260 μm, and the vertical distance is too large to reduce the charge collection rate, thereby reducing the induced current; fig. 6 is a potential distribution diagram of the detector unit, and it can be known from the diagram that the potential distribution of the detector is uniform, no obvious dead zone exists, that is, the detector structure has no obvious defects and has high manufacturing feasibility.
When the utility model is used for detecting the radiation ions, after the central anode 1 and the central cathode 3 apply voltage, the radiation ions pass through the central anode 1, the central cathode 3 and the silicon substrate 2, the central anode 1 and the silicon substrate 2 provide electron carriers, electrons drift to the central anode 1, holes drift to the central cathode 3, current signals are generated at the central cathode 3 and the central anode 1, and the signals are displayed through an external circuit; the utility model discloses the surface is the cuboid of square about setting the detecting element to, can make the surface shape after the concatenation more regular, can splice into the array of different shapes according to the demand, and the area increase of array after the concatenation can improve the position resolution of detector.
At present, the charge collection efficiency is made the entity detector, and test data obtains, the utility model discloses in silicon pixel detector design process, can calculate the charge collection efficiency of silicon pixel detector in real time, break away from the simulation software and calculate, can verify the accuracy of software calculation, for the test of entity detector is as a theoretical basis to carry out the design process simplification of detector, shorten consuming time to the structural dimension of silicon pixel detector according to the user demand.
The charge collection efficiency is calculated as follows:
the induced current i and the charge drift velocity V are known dr The calculation formula of (a) is as follows:
Figure BDA0003756183260000041
Figure BDA0003756183260000042
wherein q is the number of drift charges and μ is a constant,
Figure BDA0003756183260000043
is a function of the electrical potential, is a vector,
Figure BDA0003756183260000044
is a gravity field, is a vector, V dr For charge drift velocity, the drift time of the incident carriers, E (x (t)) is the potential at x (t) and is a scalar quantity, and x (t) is the incident carrier drift tDrift distance after the moment;
the central anode 1 and the central cathode 3 of the silicon pixel detector are respectively used as two flat plates of a parallel plate capacitor, the detector unit specific gravity field diagram is shown in figure 4, figure 4 is the detector unit specific gravity field diagram calculated by simulation software under the special potential that the external bias voltage is 1V and silicon dioxide is used as a matrix, the numerical value is intercepted on the central line of figure 4 to obtain the black dotted line of figure 5, figure 5 is the sectional line potential change diagram of figure 4, the physical meaning is the numerical value change line of figure 4, the specific gravity field is a special potential, therefore, the relation between the potential and the thickness is shown in figure 5,
Figure BDA0003756183260000045
e (x (t)) is the potential at x (t) and is a scalar quantity, d is the distance between the central anode and the central cathode, x (t) is the drift distance after the incident carrier drifts by t, E (x (t)) is the drift distance after the incident carrier drifts by t min Is the minimum potential, i.e. the potential at the central cathode, is a scalar quantity, E max Is the maximum potential, i.e. the potential at the central anode, is a scalar;
substituting E (x (t)) into the induced current i and the charge drift velocity V respectively dr The calculation of (a) can be:
Figure BDA0003756183260000046
Figure BDA0003756183260000047
Figure BDA0003756183260000048
is the potential at x (t), is a vector,
Figure BDA0003756183260000049
is a gravity field, is a vector;
the formula (2) can be converted into
Figure BDA00037561832600000410
t is a time node, c is an unknown constant;
order to
Figure BDA0003756183260000051
Y is a symbol representing the following formula;
then
Figure BDA0003756183260000052
Substituting Y and dx (t) into equation (3) yields:
Figure BDA0003756183260000053
order to
Figure BDA0003756183260000054
D is a symbol representing the following formula;
from equation (4):
Figure BDA0003756183260000055
then Y = μ (Dx (t) + E) max ) (5), equation (5) can be converted to:
Figure BDA0003756183260000056
e is a natural constant e;
when t is the time t for the carriers to drift from the central cathode to the central anode dr Or time t of drift from central anode to central cathode dr When the above formula is converted into
Figure BDA0003756183260000057
Obtained by converting the formula (6)
Figure BDA0003756183260000058
The time integral of the charge collection of the induced current can be obtained
Figure BDA0003756183260000059
i (t) is the drift current at time t, Q represents the time from 0 to t dr The charge collected at a time. The formula shows that the collected charges are inversely proportional to the electrode spacing, so that the smaller the electrode spacing, the more the charges are collected, and the higher the charge collection rate is.
The wafer is a high-purity monocrystalline silicon slice which is not doped, has no oxide layer and has a certain thickness and is a raw material of a detector chip. The wafer thickness can determine the maximum value of the electrode spacing, the electrodes are embedded into the wafer, namely, the electrode spacing can be smaller than but infinitely close to the wafer thickness in an ideal state, and generally, the thinner the silicon wafer is, the greater the process difficulty is, for example, ion implantation may break down the silicon wafer, and the implantation effect cannot be achieved; in the present invention, we select the wafer with a thickness of 300 μm as the substrate of the detector chip, so that the charge collection efficiency is higher.
The embodiment of the utility model provides a can confirm the relation of charge collection efficiency and detector thickness in silicon pixel detector design process through above-mentioned method to select wafer thickness.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on differences from other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (2)

1. The large-area high-position-resolution ultra-pure high-resistance silicon pixel detector is characterized by comprising a silicon substrate (2) in a regular quadrangular prism shape, wherein a square central anode (1) is etched on the upper bottom surface of the silicon substrate (2), a square central cathode (3) is etched in the middle of the lower bottom surface of the silicon substrate (2), the central anode (1) is overlapped with the center of the central cathode (3), and a silicon dioxide substrate (4) is arranged on the outer side of the central cathode (3); the length and width of the central anode (1) are 150 mu m multiplied by 20 mu m, the length and width of the central cathode (3) are 80 mu m multiplied by 20 mu m, and the vertical distance between the central anode (1) and the central cathode (3) is 260 mu m.
2. The large area high position resolution ultra-pure high resistance silicon pixel detector according to claim 1, wherein the silicon substrate (2) is N-type lightly doped silicon, the central anode (1) is N-type heavily doped silicon, and the central cathode (3) is P-type heavily doped silicon.
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