CN217879499U

CN217879499U - Be suitable for experimental board of smelting always of FCX458 triode

Info

Publication number: CN217879499U
Application number: CN202121115035.1U
Authority: CN
Inventors: 张凡; 左洪涛; 贾民杰; 宁凯
Original assignee: CASIC Defense Technology Research and Test Center
Current assignee: CASIC Defense Technology Research and Test Center
Priority date: 2021-05-24
Filing date: 2021-05-24
Publication date: 2022-11-22
Anticipated expiration: 2031-05-24

Abstract

The utility model discloses a be suitable for experimental board of smelting always of FCX458 triode, include: the base plate, the base plate divides into power interface district and workspace, the power interface district includes drain electrode power positive terminal, base power positive terminal and emitter power negative terminal, the workspace includes that m arranges n and is used for the test unit of FCX458 triode test, the test unit through the copper sheet circuit of base plate top layer and/or bottom with collector power positive terminal, base power positive terminal and emitter power negative terminal are connected. The utility model discloses an ageing board structure reasonable in design can carry out the reliable high temperature of arbitrary quantity device between 1 to 20 devices and smelts the experiment always, has realized the experiment always of smelting of big batch FCX458 triode under the identity test condition.

Description

Be suitable for experimental board of smelting always of FCX458 triode

Technical Field

The utility model relates to an electronic components reliability test technical field especially relates to a be suitable for experimental board of smelting always of FCX458 triode.

Background

The aging test is a method for eliminating early failure products and improving the system reliability in common use in engineering. Certain electric stress is continuously applied to the electronic components in a longer time, various physical and chemical reaction processes in the components are accelerated through the comprehensive action of the electric stress and the thermal stress, various potential defects in the components are promoted to be exposed early, and the aim of removing early failure products is fulfilled.

Burn-in is a non-destructive test that only induces a potentially defective circuit without causing new failure mechanisms or changing its failure distribution after the circuit has been screened as a whole. Only the use reliability of the circuit can be changed through aging tests, but the inherent reliability of the whole circuit cannot be changed, and the test conditions are mainly selected according to the reliability requirement degree of the circuit and the characteristics of a failure mechanism of the circuit. When the aging test is carried out, the electronic components are placed on the aging plate and placed in the aging box to apply thermal stress and electric stress, so that the early failure of the circuit is stimulated.

The reliability of each component in the same batch of products is different due to various uncertain factors of electronic components produced in batches. The burn-in test has good screening effect on a series of defects possibly existing in the process manufacturing process, such as surface contamination, poor lead welding, channel leakage, silicon wafer cracks, oxide layer defects, local heating pads, secondary breakdown and the like, and can promote the electrical parameters of a defect-free component to be stable, so that the product quality is ensured.

Because the FCX458 triode is packaged by SOT-89, the output current is large, the power dissipation is high, and the packaging form is special, the power aging difficulty of the FCX458 triode is large, so that the FCX458 triode is always in a defect test state, and the use reliability of the device cannot meet the actual requirement. As shown in fig. 1, a schematic diagram of the structure of the FCX458 transistor is shown. The FCX458 triode has four pins, specifically: and the two pins of the C end, the B end and the E end are respectively led out from the base and the emitter of the FCX458 triode.

The traditional burn-in board design method can only solve the problem of small-batch device tests, is complex in installation mode and operation method and poor in reliability, and is not suitable for the requirements of reliability screening and testing of large-batch FCX458 triode devices, so that the existing burn-in test carrier does not have the capability of performing high-temperature reverse-biased burn-in tests on the FCX458 triode devices.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a be suitable for experimental burn-in board of FCX458 triode burn-in for solve and can't realize carrying out the experimental problem of high temperature anti-inclined to one side burn-in to FCX458 triode device in batches.

In order to achieve the above object, the present invention provides the following technical solutions:

the utility model provides a be suitable for experimental board of smelting always of FCX458 triode, include: the testing device comprises a substrate, wherein the substrate is divided into a power interface area and a working area, the power interface area comprises a drain power positive terminal, a base power positive terminal and an emitter power negative terminal, the working area comprises m rows and n columns of testing units for testing the FCX458 triodes, and the testing units are connected with a collector power positive terminal, a base power positive terminal and an emitter power negative terminal through copper sheet circuits on the top layer and/or the bottom layer of the substrate;

the testing unit comprises a protective tube, a detection resistor, a collector power resistor, an emitter power resistor and a device station matched with a pin of an FCX458 triode, wherein the device station comprises a base contact, an emitter contact, a first collector contact and a second collector contact which are positioned on the same side, and the first collector contact is in short-circuit connection with the second collector contact;

the positive end of the collector power supply is connected to the first collector contact and the second collector contact through a protective tube, a detection resistor and a collector power resistor in sequence; the positive end of the base power supply is used as the negative end of the collector power supply and is in short-circuit connection with the base contact; the emitter power supply negative terminal serves as a base power supply negative terminal and is connected to the emitter contact through an emitter power resistor.

Further, the power interface area further comprises a plurality of second collector power positive terminals configured for each test unit, and the second collector power positive terminals are connected between the detection resistor and the collector power resistor.

Preferably, the collector power resistor and the emitter power resistor are respectively arranged on two sides of the device station.

Preferably, the copper sheet circuit led out from the positive terminal of the collector power supply is arranged in the middle of the bottom layer of the substrate and is connected with one end of the detection resistor through a conductive through hole.

Preferably, the copper patch circuit led out from the positive terminal of the emitter power supply is arranged on the top layer of the substrate in a concave manner along the edge of the working area and is connected with one end of the emitter power resistor.

Preferably, the copper clad lines led out from the positive terminal of the base power supply are arranged on two sides of the bottom layer of the substrate and are arranged into two copper clad lines positioned on the inner sides of the copper clad lines led out from the positive terminal of the emitter power supply, and the two copper clad lines are communicated through a copper clad connecting line.

Preferably, the copper sheet circuit led out from the positive terminal of the collector power supply is arranged in the middle of the bottom layer of the substrate and is connected with one end of the detection resistor through a conductive perforation; the copper sheet circuit led out from the positive terminal of the emitter power supply is arranged on the top layer of the substrate in a concave mode along the edge of the working area and is connected with one end of the emitter power resistor; the copper sheet circuits led out from the positive terminal of the base power supply are arranged on two sides of the bottom layer of the substrate and are arranged into two copper sheet circuits which are positioned on the inner sides of the copper sheet circuits led out from the positive terminal of the emitter power supply, and the two copper sheet circuits are communicated through copper sheet connecting wires.

Preferably, the range of the row number m of the test unit array in the working area is 1 to 4, the range of the column number is 4 to 20, and the range of the number of the test units is 4 to 80. Preferably, the number of rows m =2 and the number of columns n =10.

Preferably, the temperature resistance of the board of the aging board substrate is more than or equal to 170 ℃; the thickness of the copper sheet circuit is greater than or equal to 70 micrometers, and the value range of the line width is in the range of 10mil to 20 mil; the number of the wiring through holes of each network copper sheet circuit on the substrate is less than or equal to 3, and the wiring distance between adjacent copper sheet circuits is greater than or equal to 0.3mm.

Compared with the prior art, the utility model provides an in the ageing board design scheme that is suitable for FCX458 triode ageing test, adopt m to arrange the test unit array overall arrangement that n was listed as, can test in batches a plurality of testing device simultaneously, improved the ageing test ability, satisfy the requirement that big batch FCX458 triode carries out the experiment simultaneously under the same experimental condition, have big batch test ability and satisfy the identity test requirement. The high-temperature aging test can be realized by the substrate plate of the aging plate being resistant to temperature of more than or equal to 170 ℃. By reasonably designing the wiring line width and the number of the through holes, the electrical performance of the aging board can be ensured to meet the test requirement. The emitter power resistor and the collector power resistor with high heat productivity are arranged on two sides of the device station, so that the heat productivity of the test unit can be dispersed.

The utility model discloses an ageing plate structure reasonable in design, actual operation is simple, and the operation is reliable, can realize simultaneously that 4 to 20 reliable high temperature of arbitrary quantity device between the device smelts the experiment always, has improved the product greatly and has criticized production in-process test efficiency, especially can realize that small batch, big batch, high reliability, easy operation's FCX458 triode high temperature smelts the experiment always.

Drawings

The accompanying drawings, which are described herein, serve to provide a further understanding of the invention and constitute a part of this specification, and the exemplary embodiments and descriptions thereof are provided for explaining the invention without unduly limiting it. In the drawings:

FIG. 1 is a schematic diagram of the structure of an FCX458 transistor;

fig. 2 is a schematic diagram of the aging test principle of the FCX458 triode in the embodiment of the present invention;

fig. 3 is a schematic diagram of a top layer design of a burn-in board suitable for an FCX458 transistor burn-in test according to an embodiment of the present invention;

fig. 4 is a schematic diagram of the design of the aging board bottom layer suitable for the FCX458 triode aging test in the embodiment of the present invention.

Detailed Description

For the convenience of clearly describing the technical solution of the embodiment of the present invention, in the embodiment of the present invention, the words "first", "second", etc. are adopted to distinguish the same items or similar items with basically the same functions and actions. For example, the first threshold and the second threshold are only used for distinguishing different thresholds, and the sequence order of the thresholds is not limited. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance.

It is to be understood that the terms "exemplary" or "such as" are used herein to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "such as" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.

As shown in fig. 2, a schematic diagram of the FCX458 transistor burn-in test principle is shown. In fig. 2, a power supply Vc and a power supply Vb are test power supplies configured for devices corresponding to the burn-in board, and are used to provide test biases for the FCX458 triode power burn-in test, where the power supply Vc provides a Vcb bias for the FCX458 triode device burn-in test, and the power supply Vb provides a Vbe bias for the FCX458 triode device burn-in test. When the specific circuit is realized, the positive end of a power supply Vc is simultaneously applied to a collector (end C) of an FCX458 triode through a protective tube, a detection resistor R0 and a power resistor Rc, and the negative end of the power supply Vc is in short-circuit connection with the positive end of a power supply Vb; the positive terminal of the power supply Vb is short-circuited with the negative terminal of the power supply Vc and is applied to the base (terminal B) of the FCX458 triode, and the negative terminal of the power supply Vb is applied to the emitter (terminal E) of the FCX458 triode through a power resistor Re.

FIG. 3 shows a schematic diagram of a burn-in board top layer design suitable for the FCX458 transistor burn-in test. As shown in fig. 4, a schematic diagram of a burn-in board bottom layer design suitable for the FCX458 transistor burn-in test is shown. It can be seen that the aging board shown in fig. 3 and 4 includes: the base plate, the base plate divides into power interface district and workspace, the power interface district includes drain electrode power positive terminal, base power positive terminal and emitter power negative terminal, the workspace includes that m arranges n and is used for the test unit of FCX458 triode test, the test unit through the copper sheet circuit of base plate top layer and/or bottom with collector power positive terminal, base power positive terminal and emitter power negative terminal are connected.

Preferably, the range of the row number m of the test unit array in the working area is 1 to 4, the range of the column number is 4 to 20, and the range of the number of the test units is 4 to 80. Preferably, the number of rows m =2 and the number of columns n =10, i.e. the burn-in board shown in fig. 3 and 4 has 2 rows and 10 columns for 20 test units, which can satisfy the batch test of 1 to 20 devices.

In connection with the test circuit shown in fig. 2, it can be seen that the test unit includes a fuse, a sense resistor, a collector power resistor, an emitter power resistor, a device station matching the FCX458 transistor pin, the device station including a base contact, an emitter contact, a first collector contact on one side and a second collector contact on the other side, the first collector contact being short-circuited to the second collector contact;

The collector power resistor and the emitter power resistor are respectively distributed and configured at two sides of the station of the device, the power resistors Rc and Re shown in figure 2 are dispersedly installed on the aging board, the distance between the stations is increased, the smoothness of an air channel can be ensured, and the heat dissipation capability of the whole board is enhanced.

The power interface area is connected with the working area through a copper sheet circuit, and the copper sheet circuit led out from the positive electrode end of the collector power supply is arranged in the middle of the bottom layer of the substrate and is connected with one end of the detection resistor through a conductive perforation; the copper sheet circuit led out from the positive terminal of the emitter power supply is arranged on the top layer of the substrate in a concave mode along the edge of the working area and is connected with one end of the emitter power resistor; the copper-clad circuits led out from the positive terminal of the base power supply are arranged on two sides of the bottom layer of the substrate and are arranged into two copper-clad circuits which are positioned on the inner side of the copper-clad circuit led out from the positive terminal of the emitter power supply, and the two copper-clad circuits are communicated through a copper-clad connecting wire.

In order to improve the temperature tolerance of the aging board, the temperature tolerance of the board of the aging board substrate is more than or equal to 170 ℃; in order to ensure the quality of electric connection and bear larger current, the thickness of the copper sheet circuit is more than or equal to 70 micrometers, and the value range of the line width is in the interval of 10-20 mils; in order to ensure the electrical isolation quality of the copper foil circuits, the number of the wiring through holes of each network copper foil circuit on the substrate is less than or equal to 3, and the wiring distance between adjacent copper foil circuits is greater than or equal to 0.3mm.

Based on the design scheme of the burn-in board, when power burn-in test is carried out on the FCX458 triode, the high-temperature burn-in test on the FCX458 triode can be realized only by putting a device into a test fixture according to the polarity direction shown by the burn-in board and applying conditions through test equipment.

The utility model discloses a burn-in board design scheme adopts the test unit array overall arrangement that m was arranged n and is listed as, can test 1 to 20 test devices simultaneously, has improved the burn-in test ability, satisfies the requirement that big batch FCX458 triode was tested simultaneously under the same experimental condition circumstances, has big batch test ability and satisfies the identity test requirement. The temperature resistance of the base plate of the aging plate is more than or equal to 170 ℃, and the aging test of high-temperature reverse deflection can be realized. Through rational design wiring line width and via hole figure, can ensure that the electrical property of ageing board satisfies the test requirement, for example the minimum line width of electric wiring signal line is 10 mils, and the electric current bears 0.9A (copper sheet thickness 70 um), and power VCC, the minimum line width of GND bear 2.0A (copper sheet thickness 70 um) for 20 mils electric current. No more than 3 per net routing via. The adjacent wiring pitch (edge) is not less than 0.3mm.

The utility model discloses an ageing plate structure reasonable in design, actual operation is simple, and the operation is reliable, can realize simultaneously that the reliable high temperature of arbitrary quantity device smelts the experiment always between 1 to 20 devices, has improved the product greatly and has criticized production in-process test efficiency, especially can realize small batch volume, big batch, high reliability, easy operation's FCX458 triode high temperature anti-inclined to one side experiment.

While the invention has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.

While the invention has been described in conjunction with specific features and embodiments thereof, it will be apparent that various modifications and combinations can be made thereto without departing from the spirit and scope of the invention. Accordingly, the specification and figures are merely exemplary of the invention as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims

1. A burn-in board suitable for an FCX458 transistor burn-in test, comprising: the testing device comprises a substrate, wherein the substrate is divided into a power interface area and a working area, the power interface area comprises a drain power positive terminal, a base power positive terminal and an emitter power negative terminal, the working area comprises m rows and n columns of testing units for testing the FCX458 triodes, and the testing units are connected with a collector power positive terminal, a base power positive terminal and an emitter power negative terminal through copper sheet circuits on the top layer and/or the bottom layer of the substrate;

the testing unit comprises a protective tube, a detection resistor, a collector power resistor, an emitter power resistor and a device station matched with an FCX458 triode pin, wherein the device station comprises a base contact, an emitter contact, a first collector contact and a second collector contact, the base contact, the emitter contact, the first collector contact and the second collector contact are positioned on the same side, and the first collector contact and the second collector contact are in short circuit connection;

2. The burn-in board of claim 1 wherein the power interface section further comprises a plurality of positive second collector power terminals configured for each test cell, the positive second collector power terminals connected between the sense resistor and the collector power resistor.

3. The burn board of claim 2 wherein said collector power resistor and said emitter power resistor are respectively disposed on opposite sides of said device station.

4. The aging board of claim 2, wherein the copper sheet circuit led out from the positive terminal of the collector power supply is disposed at a middle position of the bottom layer of the substrate and connected to one terminal of the detection resistor through a conductive via.

5. The aging board of claim 2, wherein the copper strap from the emitter power positive terminal is recessed along the edge of the active area and is disposed on the top of the substrate and connected to one terminal of the emitter power resistor.

6. The aging board according to claim 2, wherein the copper tracks from the positive base power supply terminal are disposed on both sides of the bottom substrate layer, and two copper tracks are disposed inside the copper tracks from the positive emitter power supply terminal, and the two copper tracks are connected by a copper track connecting line.

7. The aging board according to claim 2 or 3, wherein the copper sheet circuit led out from the positive electrode terminal of the collector power supply is arranged in the middle of the bottom layer of the substrate and is connected with one end of the detection resistor through a conductive through hole;

the copper sheet circuit led out from the positive end of the emitter power supply is arranged on the top layer of the substrate in a concave mode along the edge of the working area and is connected with one end of the emitter power resistor;

the copper sheet circuits led out from the positive terminal of the base power supply are arranged on two sides of the bottom layer of the substrate and are arranged into two copper sheet circuits which are positioned on the inner sides of the copper sheet circuits led out from the positive terminal of the emitter power supply, and the two copper sheet circuits are communicated through copper sheet connecting wires.

8. The burn-in board of claim 7, wherein the number of rows m of the array of test cells in the workspace ranges from 1 to 4, the number of columns ranges from 4 to 20, and the number of test cells ranges from 4 to 80.

9. The aging board of any one of claims 1 to 6, wherein the number of rows m of the array of test elements in the working area ranges from 1 to 4, the number of columns ranges from 4 to 20, and the number of test elements ranges from 4 to 80.

10. The refining board of claim 9,

the temperature resistance of the board of the aging board substrate is more than or equal to 170 ℃;

the thickness of the copper sheet circuit is greater than or equal to 70 micrometers, and the value range of the line width is in the range of 10mil to 20 mil;

the number of wiring through holes of each network copper-clad circuit on the substrate is less than or equal to 3, and the wiring distance between adjacent copper-clad circuits is greater than or equal to 0.3mm.