CN217641304U - Novel IGBT packaging structure - Google Patents

Novel IGBT packaging structure Download PDF

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Publication number
CN217641304U
CN217641304U CN202221257412.XU CN202221257412U CN217641304U CN 217641304 U CN217641304 U CN 217641304U CN 202221257412 U CN202221257412 U CN 202221257412U CN 217641304 U CN217641304 U CN 217641304U
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China
Prior art keywords
chip
bottom plate
packaging structure
signal terminal
bonding
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CN202221257412.XU
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Chinese (zh)
Inventor
郝文煊
张鹏
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Shandong Sli Microelectronics Co ltd
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Shandong Sli Microelectronics Co ltd
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Abstract

The utility model relates to a IGBT packaging structure technical field, the utility model discloses a novel IGBT packaging structure, including the bottom plate with set up in the shell on bottom plate top, the bottom plate top is provided with chip and DBC board, the shell top is fixed with power electrode and signal terminal, power electrode and signal terminal one end are provided with the bonding lead wire; the utility model discloses on being fixed to the shell with power electrode and signal terminal, the mode of reuse bonding carries out the electricity to the inside DBC of module and power electrode with signal terminal and is connected, then replaces the welding through the mode of bonding, has avoided because the inefficacy that the welding problem leads to the bonding is more high-efficient than welded efficiency, has improved production efficiency.

Description

Novel IGBT packaging structure
Technical Field
The utility model relates to a IGBT packaging structure technical field specifically is a novel IGBT packaging structure.
Background
The IGBT is a device formed by matching an MOSFET and a bipolar transistor, the input electrode of the IGBT is the MOSFET, the output electrode of the IGBT is a PNP transistor, the IGBT integrates the advantages of the MOSFET and the bipolar transistor, has the advantages of small driving power and high switching speed of the MOSFET, has the advantages of reduced saturation voltage and large capacity of the bipolar transistor, has the frequency characteristic between the MOSFET and the power transistor, can normally work in a frequency range of dozens of KHZ, and is widely applied to modern industrial electronic technologies, such as frequency converters, air conditioners, welding machines, photovoltaics, automobiles and the like.
However, in the existing IGBT packaging structure, an electrode and a signal terminal are welded to a DBC by welding, and the structure has a risk of infirm welding, may cause a falling-off phenomenon after long-term use, and needs to be welded twice in production, which complicates the process and affects the production efficiency.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a novel IGBT packaging structure to solve current IGBT packaging structure and weld DBC to electrode and signal terminal through the welded mode on, this structure has the not firm risk of welding, long-term use may lead to the obscission, and need the secondary to weld in production, and the process is comparatively complicated, influences production efficiency's problem.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a novel IGBT packaging structure, including the bottom plate with set up in the shell on bottom plate top, the bottom plate top is provided with chip and DBC board, shell top fixed mounting has power electrode and signal terminal, power electrode and signal terminal one end are provided with the bonding lead wire.
Preferably, the access hole has been seted up to shell outer wall one side, access hole inner wall both sides fixed mounting has the inserted block, the inside pull board that is provided with of access hole, the slot with inserted block looks adaptation is seted up at pull board both ends.
Preferably, the chips include a BT chip and a FWD chip.
Preferably, a solder layer is soldered between the chip and the bottom plate.
Preferably, a bonding wire is arranged between one end of the power electrode and the BT chip, a bonding wire is arranged between the BT chip and the FWD chip, a bonding wire is arranged between the FWD chip and the DBC board, and a bonding wire is arranged between one end of the signal terminal and the DBC board.
Preferably, the bottom plate is made of copper materials.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses on fixing the shell with power electrode and signal terminal, the mode of reuse bonding carries out the electricity to the inside DBC of module and power electrode and signal terminal and is connected, then replaces the welding through the mode of bonding, has avoided because the inefficacy that the welding problem leads to the bonding is more high-efficient than welded efficiency, has improved production efficiency.
Drawings
Fig. 1 is a schematic view of the whole structure of the IGBT package structure of the present invention;
fig. 2 is a schematic drawing showing the drawing state of the drawing plate of the IGBT package structure of the present invention;
fig. 3 is a schematic perspective view of the IGBT package structure of the present invention;
fig. 4 is a schematic diagram of the internal structure of the IGBT package structure of the present invention;
fig. 5 is an enlarged structural diagram of a in fig. 3.
In the figure: 10-a base plate; 11-a solder layer; 12-DBC plate; 20-a housing; 21-access hole; 22-an insert block; 30-a power electrode; 40-signal terminals; 50-a chip; 60-bonding wires; 70-a drawing plate; 71-slot.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-5, the present invention provides a technical solution: the utility model provides a novel IGBT packaging structure, including bottom plate 10 and through screw fixed mounting in the shell 20 on bottom plate 10 top, bottom plate 10 top welding has chip 50 and DBC board 12, welding has solder layer 11 between chip 50 and the bottom plate 10, can improve the welding connection intensity between chip 50 and the bottom plate 10, DBC board 12 is the ceramic substrate that covers copper, it has one deck copper foil respectively at ceramic substrate's upper and lower surface, it can be formed by copper foil direct bonding to aluminium oxide or aluminium nitride ceramic substrate at high temperature on the surface, and have good electrical insulation performance, high heat conduction characteristic, excellent soft solderability and higher adhesion strength, and great current-carrying capacity, shell 20 top fixed mounting has power electrode 30 and signal terminal 40, power electrode 30 and signal terminal 40 one end bonding have bonding lead 60. The power electrode 30 and the signal terminal 40 are made of bent metal, and the welding surface is plated with aluminum, so that the power electrode and the signal terminal can be bonded with aluminum wires.
In the preferred embodiment, the chip 50 includes a BT chip and a FWD chip, where the FWD is a freewheeling diode, and the FWD is generally used to protect the device from being broken down or burned out by an induced voltage, is connected in parallel to two ends of the device generating an induced electromotive force, and forms a loop with the device, so that the generated high electromotive force is consumed in the loop in a continuous current manner, thereby protecting the device in the circuit from being damaged.
In the preferred technical scheme of this embodiment, access hole 21 has been seted up to shell 20 outer wall one side, and access hole 21 inner wall both sides fixed mounting has inserted block 22, and the inside pull of access hole 21 has pull board 70, and the slot 71 with inserted block 22 looks adaptation is seted up at pull board 70 both ends.
Furthermore, the drawing structure of the drawing plate 70 can be directly drawn out to observe the internal condition of the shell 20, the analysis is convenient for internal inspection and failure, and the drawing plate 70 can be drawn out for wire bonding.
In the preferred technical solution of the present embodiment, a bonding wire 60 is bonded between one end of the power electrode 30 and the BT chip, a bonding wire 60 is bonded between the BT chip and the FWD chip, a bonding wire 60 is bonded between the FWD chip and the DBC board 12, and a bonding wire 60 is bonded between one end of the signal terminal 40 and the DBC board 12, and the bonding mode replaces the welding mode, thereby avoiding the failure caused by the welding problem.
In the preferred embodiment, the bottom plate 10 is made of copper, which can improve the heat conduction efficiency of the bottom plate 10, thereby improving the heat dissipation effect of the bottom plate 10.
The working principle is as follows: the power electrode 30 and the signal terminal 40 are fixed on the shell 20, and the module inner DBC board 12 and the power electrode 30 are electrically connected with the signal terminal 10 by bonding, so that welding is replaced by bonding, and failure caused by welding problems is avoided.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. The utility model provides a novel IGBT packaging structure, including bottom plate (10) with set up in shell (20) on bottom plate (10) top, bottom plate (10) top is provided with chip (50) and DBC board (12), its characterized in that: the top end of the shell (20) is fixedly provided with a power electrode (30) and a signal terminal (40), and one ends of the power electrode (30) and the signal terminal (40) are provided with bonding leads (60).
2. The novel IGBT packaging structure of claim 1, characterized in that: the maintenance mouth (21) has been seted up to shell (20) outer wall one side, maintenance mouth (21) inner wall both sides fixed mounting has inserted block (22), maintenance mouth (21) inside is provided with pull board (70), slot (71) with inserted block (22) looks adaptation are seted up at pull board (70) both ends.
3. The novel IGBT packaging structure of claim 1, characterized in that: the chips (50) include a BT chip and a FWD chip.
4. The novel IGBT packaging structure of claim 1, characterized in that: a solder layer (11) is welded between the chip (50) and the bottom plate (10).
5. The novel IGBT packaging structure of claim 1, characterized in that: be provided with bonding wire (60) between power electrode (30) one end and the BT chip, be provided with bonding wire (60) between BT chip and the FWD chip, be provided with bonding wire (60) between FWD chip and DBC board (12), be provided with bonding wire (60) between signal terminal (40) one end and DBC board (12).
6. The novel IGBT packaging structure of claim 1, characterized in that: the bottom plate (10) is made of copper materials.
CN202221257412.XU 2022-05-24 2022-05-24 Novel IGBT packaging structure Active CN217641304U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221257412.XU CN217641304U (en) 2022-05-24 2022-05-24 Novel IGBT packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221257412.XU CN217641304U (en) 2022-05-24 2022-05-24 Novel IGBT packaging structure

Publications (1)

Publication Number Publication Date
CN217641304U true CN217641304U (en) 2022-10-21

Family

ID=83655650

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202221257412.XU Active CN217641304U (en) 2022-05-24 2022-05-24 Novel IGBT packaging structure

Country Status (1)

Country Link
CN (1) CN217641304U (en)

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