CN218182212U - Novel SMD IGBT module - Google Patents

Novel SMD IGBT module Download PDF

Info

Publication number
CN218182212U
CN218182212U CN202221268941.XU CN202221268941U CN218182212U CN 218182212 U CN218182212 U CN 218182212U CN 202221268941 U CN202221268941 U CN 202221268941U CN 218182212 U CN218182212 U CN 218182212U
Authority
CN
China
Prior art keywords
igbt module
pin
igbt
shell
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202221268941.XU
Other languages
Chinese (zh)
Inventor
郝文煊
张鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Sli Microelectronics Co ltd
Original Assignee
Shandong Sli Microelectronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Sli Microelectronics Co ltd filed Critical Shandong Sli Microelectronics Co ltd
Priority to CN202221268941.XU priority Critical patent/CN218182212U/en
Application granted granted Critical
Publication of CN218182212U publication Critical patent/CN218182212U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

The utility model relates to a novel SMD IGBT module, including the IGBT module that sets up in the shell and be used for welding with PCB circuit board and set up the pin in IGBT module both sides, be equipped with two chips in the IGBT module, be equipped with the bonding wire between the chip, the pin extends to the outer end of IGBT module from the chip; the IGBT module that this application set up draws the pin of stretching out from the side, has at first reduced the thickness of module, makes the module more frivolous, and also need not to stay the hole on the circuit board, can not damage pin and PCB circuit board, and is equipped with the copper at the bottom mounting of shell, can dispel the heat with the external world, so this equipment adopts the SMD IGBT volume that sets up littleer, easily preserves, and is not fragile.

Description

Novel SMD IGBT module
Technical Field
The utility model relates to a IGBT module technical field specifically is a novel SMD IGBT module.
Background
In the field of IGBT module packaging, belonging to the microelectronic industry, an IGBT is a device formed by matching an MOSFET and a bipolar transistor, the input electrode of the IGBT is the MOSFET, and the output electrode of the IGBT is a PNP transistor, the IGBT integrates the advantages of the two devices, not only has the advantages of small driving power and high switching speed of the MOSFET device, but also has the advantages of reduced saturation voltage and large capacity of the bipolar device, the frequency characteristic of the IGBT is between the MOSFET and the power transistor, the IGBT can normally work in a frequency range of dozens of KHZ, and the IGBT can be widely applied to modern industrial electronic technologies, such as the industries of frequency converters, air conditioners, welding machines, photovoltaics, automobiles and the like;
as shown in fig. 1, for the IGBT module 1 in the prior art, it can be seen that the existing IGBT module 1 is of a pin type, the PCB 2 is provided with the opening 3, and the IGBT pin 4 is inserted into the opening 3 in the PCB 2 for soldering during soldering, so that the IGBT pin 4 and the PCB 2 are easily damaged.
In summary, the present application provides a novel patch IGBT module to solve the above-mentioned problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a novel SMD IGBT module is in order to solve among the prior art problem that IGBT module 1 damaged IGBT stitch 4 and PCB circuit board 2 and proposed easily, the utility model discloses convenient to use, easy operation, systematic height, the practicality is strong.
In order to achieve the above purpose, the utility model provides a following technical scheme: the utility model provides a novel SMD IGBT module, including setting up the IGBT module in the shell and be used for with PCB circuit board welding and set up the pin in IGBT module both sides, be equipped with two chips in the IGBT module, be equipped with the bonding wire between the chip, the pin extends to the outer end of IGBT module from the chip.
Preferably, the bottom end of the chip is connected with a DBC substrate, and the DBC substrate is connected to the inner bottom end of the shell.
Preferably, the bottom end of the shell is fixedly connected with a copper plate.
Preferably, the position of the pin corresponding to the PCB circuit board is connected with an electrode copper sheet used for being welded with the pin.
Preferably, the interior of the housing is filled with silicone gel.
Preferably, the pins are formed by bending metal copper sheets.
Compared with the prior art, the beneficial effects of the utility model are that: the IGBT module that this application set up draws the pin of stretching out from the side, has at first reduced the thickness of module, makes the module more frivolous, and also need not to stay the hole on the circuit board, can not damage pin and PCB circuit board, and is equipped with the copper at the bottom mounting of shell, can dispel the heat with the external world, so this equipment adopts the SMD IGBT volume that sets up littleer, easily preserves.
Drawings
Fig. 1 is a schematic front view of an IGBT module in the prior art;
fig. 2 is a schematic view of a front view structure of an IGBT module according to the present invention;
fig. 3 is a schematic front view of the middle case of the present invention;
reference numerals are as follows: 1. an IGBT module; 2. a PCB circuit board; 3. a pin; 4. an electrode copper sheet; 5. a chip; 6. a bonding wire; 7. a DBC substrate; 8. a copper plate; 9. a housing.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention;
fig. 1 shows an installation manner of an IGBT module in the prior art, in which an opening 3 is provided on a PCB 2, and an IGBT pin 4 is inserted into the opening 3 in the PCB 2 for soldering during soldering.
Referring to fig. 1-2, the present invention provides a technical solution: the utility model provides a novel SMD IGBT module, including setting up IGBT module 1 in shell 9 and be used for with PCB circuit board 2 welding and set up pin 3 in IGBT module 1 both sides, pin 3 is used for the welding on PCB circuit board 2, the bottom fixedly connected with copper 8 of shell 9 can dispel the heat with the external world.
Referring to fig. 1-2, two chips 5 are disposed in the IGBT module 1, bonding wires 6 are disposed between the chips 5 and are connected by bonding wires 6, the leads 3 extend from the chips 5 to the outer end of the IGBT module 1, and the leads 3 are formed by bending a metal copper sheet, so that the leads 3 can be directly soldered to the soldering surface of the circuit board.
Referring to fig. 1-2, an electrode copper sheet 4 for welding with a pin 3 is connected to a position of the pin 3 corresponding to the PCB 2, the electrode copper sheet 4 is welded with the pin 3, the welding is a prior art, a DBC substrate 7 is connected to a bottom end of the chip 5, the DBC substrate 7 plays a supporting and mounting role, the DBC substrate 7 is connected to an inner bottom end of the housing 9, the DBC substrate 7 is made of three layers, an upper layer and a lower layer are metal layers, and an intermediate layer is an insulating ceramic layer. Compared with a ceramic substrate, the DBC substrate 7 has better performance, lighter weight, better heat conductivity, and better reliability.
The work flow of the application is briefly described as follows: according to the IGBT module 1, the pins 3 extending out from the side face are firstly reduced in thickness, so that the module is lighter and thinner; the pins 3 are formed by bending metal copper sheets, so that the pins 3 can be directly in contact welding with the welding surface of the circuit board, holes do not need to be reserved on the circuit board, the pins 3 and the PCB 2 cannot be damaged, the copper plate 8 is fixedly arranged at the bottom end of the shell 9, the copper plate can be in bonding connection with the outside, the inside of the shell 9 is in bonding connection with the bonding wire 6, and silica gel can be filled in the shell 9 to play roles in protection and heat conduction;
therefore, the beneficial effects of the application are as follows: the patch type IGBT adopting the setting mode is smaller in size and easy to store, and the PCB circuit board 2 is not required to be provided with holes, so that the pins 3 and the PCB circuit board 2 are not easy to damage.
The utility model discloses the standard part that uses all can purchase from the market, dysmorphism piece all can be customized according to the description with the record of attached drawing, the concrete connected mode of each part all adopts conventional means such as ripe bolt, rivet, welding among the prior art, machinery, part and equipment all adopt among the prior art, conventional model, including circuit connection adopts conventional connected mode among the prior art, and the details are not repeated here, and the content that does not make detailed description in this description belongs to the prior art that expert technical personnel know in this field.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. The utility model provides a novel SMD IGBT module which characterized in that: including setting up IGBT module (1) in shell (9) and being used for with PCB circuit board (2) welding and setting up pin (3) in IGBT module (1) both sides, be equipped with two chips (5) in IGBT module (1), be equipped with bonding wire (6) between chip (5), pin (3) extend to the outer end of IGBT module (1) from chip (5).
2. The novel patch type IGBT module according to claim 1, characterized in that: the bottom end of the chip (5) is connected with a DBC substrate (7), and the DBC substrate (7) is connected to the inner bottom end of the shell (9).
3. The novel patch type IGBT module according to claim 2, characterized in that: the bottom end of the shell (9) is fixedly connected with a copper plate (8).
4. The novel patch type IGBT module according to claim 3, characterized in that: the position of the pin (3) corresponding to the PCB (2) is connected with an electrode copper sheet (4) used for being welded with the pin (3).
5. The novel patch type IGBT module according to claim 4, characterized in that: the shell (9) is filled with silicone gel.
6. The novel patch type IGBT module according to claim 5, characterized in that: the pins (3) are formed by bending metal copper sheets.
CN202221268941.XU 2022-05-25 2022-05-25 Novel SMD IGBT module Active CN218182212U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221268941.XU CN218182212U (en) 2022-05-25 2022-05-25 Novel SMD IGBT module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221268941.XU CN218182212U (en) 2022-05-25 2022-05-25 Novel SMD IGBT module

Publications (1)

Publication Number Publication Date
CN218182212U true CN218182212U (en) 2022-12-30

Family

ID=84608708

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202221268941.XU Active CN218182212U (en) 2022-05-25 2022-05-25 Novel SMD IGBT module

Country Status (1)

Country Link
CN (1) CN218182212U (en)

Similar Documents

Publication Publication Date Title
US20050127494A1 (en) Semiconductor package
CN216563091U (en) Double-sided heat dissipation power module
CN218182212U (en) Novel SMD IGBT module
CN112736040A (en) Double-side welded power module and welding process
CN112701094A (en) Power device packaging structure and power electronic equipment
CN219066818U (en) Power module lead frame capable of controlling thickness of solder and power module structure
CN110416200B (en) Power module packaging structure and manufacturing method
CN110060991B (en) Intelligent power module and air conditioner
CN217719583U (en) Half-bridge diode integrated device, power module and frequency converter
CN211428165U (en) High-heat-dissipation and high-reliability IGBT power module structure
CN217641304U (en) Novel IGBT packaging structure
CN216213393U (en) Heat dissipation sheet and semiconductor circuit
CN211125648U (en) High-power integrated device applied to inverter welding machine
CN115579346B (en) Connection structure, packaging structure and manufacturing process of power module
CN214848606U (en) High heat dissipation intelligent power module
CN214901880U (en) Power device heat radiation structure for electric heater
CN220400580U (en) High-efficiency radiating unit type discrete device
CN214043633U (en) Power module
CN217881485U (en) QFN (quad Flat No lead) packaging module of IC (Integrated Circuit) chip
CN213958939U (en) Field effect transistor suitable for high-density layout
CN219017643U (en) Power module and electronic equipment with same
CN220400582U (en) Substrate of intelligent power module, intelligent power module and electronic equipment
CN214313181U (en) High-current field effect transistor
CN214672582U (en) Novel packaging structure of integrated IGBT module
CN219575622U (en) Packaging structure, circuit board structure and electronic equipment

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant