CN216849933U - Packaging structure of direct current single phase motor drive power device - Google Patents
Packaging structure of direct current single phase motor drive power device Download PDFInfo
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- CN216849933U CN216849933U CN202220371189.5U CN202220371189U CN216849933U CN 216849933 U CN216849933 U CN 216849933U CN 202220371189 U CN202220371189 U CN 202220371189U CN 216849933 U CN216849933 U CN 216849933U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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Abstract
The utility model discloses a packaging structure of single phase motor drive power device of direct current. The structure comprises a lead frame, wherein the lead frame comprises a first base island and a second base island which are sequentially arranged along a first direction; the first transistor group is positioned on the front side of the first base island and comprises a first P-type transistor and a first N-type transistor; the second transistor group is positioned on the front side of the second base island and comprises a second P-type transistor and a second N-type transistor; the drains of the first P-type transistor and the second P-type transistor are electrically connected in series; the source electrodes of the first P-type transistor and the second P-type transistor are electrically connected with the drain electrodes of the first N-type transistor and the second N-type transistor in a one-to-one correspondence mode; and the drains of the first N-type transistor and the second N-type transistor are used as signal output ends. The utility model discloses reduce the PCB board area occupied and the winding displacement design degree of difficulty, improve radiating effect and device uniformity.
Description
Technical Field
The embodiment of the utility model provides a relate to the semiconductor technology field, especially relate to a packaging structure of single phase motor drive power device of direct current.
Background
In the current market, a plurality of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) devices or 2 half-bridge MOSFET devices are required to form a driving control circuit for direct-current single-phase pumps and motor control boards to generate phase voltage for the operation of the pumps and the motors; the prior art has the problems of large occupied area of a printed circuit board, poor heat dissipation, poor consistency of devices, complex arrangement design of flat cables and the like.
SUMMERY OF THE UTILITY MODEL
The utility model provides a packaging structure of direct current single phase motor drive power device to reduce printed circuit board area occupied, improve the radiating effect, improve the device uniformity, reduce the printed circuit board winding displacement layout design degree of difficulty.
The embodiment of the utility model provides a packaging structure of direct current single phase motor drive power device, this packaging structure includes:
the lead frame comprises a first base island and a second base island, and the first base island and the second base island are sequentially arranged along a first direction;
a first transistor group located on the front side of the first base island, wherein the first transistor group comprises a first P-type transistor and a first N-type transistor; the first P-type transistor and the first N-type transistor are sequentially arranged along a second direction;
a second transistor group located on a front side of the second base island, wherein the second transistor group includes a second P-type transistor and a second N-type transistor; the second P-type transistor and the second N-type transistor are sequentially arranged along a second direction;
wherein the second direction is perpendicular to the first direction;
the drains of the first and second P-type transistors are electrically connected in series;
the source electrodes of the first P-type transistor and the second P-type transistor are electrically connected with the drain electrodes of the first N-type transistor and the second N-type transistor in a one-to-one correspondence mode;
and the drains of the first N-type transistor and the second N-type transistor are used as signal output ends.
Optionally, the package structure of the dc single-phase motor driving power device further includes 4 gate connection electrodes arranged in an insulating manner, where the gate connection electrodes include a first gate connection electrode, a second gate connection electrode, a third gate connection electrode, and a fourth gate connection electrode;
the first gate connection electrode and the second gate connection electrode are disposed in a first region of the lead frame; the third gate connection electrode and the fourth gate connection electrode are disposed in a second region of the lead frame; the first region and the second region are parallel to each other, and the first region and the second region are located on two sides of the first base island and the second base island along a second direction;
the first grid electrode connecting electrode and the second grid electrode connecting electrode are respectively and correspondingly electrically connected with the grid electrode of the first P-type transistor and the grid electrode of the second P-type transistor one by one;
the third gate connecting electrode and the fourth gate connecting electrode are respectively and correspondingly electrically connected with the gate of the first N-type transistor and the gate of the second N-type transistor one by one.
Optionally, the package structure of the dc single-phase motor driving power device further includes:
the first source electrode connecting electrode and the second source electrode connecting electrode are respectively and correspondingly electrically connected with the source electrode of the first N-type transistor and the source electrode of the second N-type transistor one by one;
the first source connection electrode and the second source connection electrode are disposed in a second region of the lead frame.
Optionally, the package structure of the dc single-phase motor driving power device further includes:
the first drain electrode connecting electrode and the second drain electrode connecting electrode are respectively and correspondingly electrically connected with the drain electrode of the first P-type transistor and the drain electrode of the second P-type transistor one by one;
the first drain connection electrode and the second drain connection electrode are disposed in a first region of the lead frame.
Optionally, the package structure of the dc single-phase motor driving power device further includes:
a first output electrode and a second output electrode electrically connected to a drain of the first N-type transistor and a drain of the second N-type transistor, respectively;
the first output electrode and the second output electrode are disposed on the back surfaces of the first base island and the second base island, wherein the back surfaces are surfaces on which the transistors are not disposed on the first base island and the second base island.
Optionally, the package structure of the dc single-phase motor driving power device further includes: the grid electrode of the first P-type transistor and the grid electrode of the second P-type transistor are respectively and electrically connected with the first grid electrode connecting electrode and the second grid electrode connecting electrode through the connecting sheets; the grid electrode of the first N-type transistor and the grid electrode of the second N-type transistor are respectively and electrically connected with the third grid electrode connecting electrode and the fourth grid electrode connecting electrode through connecting pieces;
the source electrode of the first N-type transistor and the source electrode of the second N-type transistor are respectively and electrically connected with the first source electrode connecting electrode and the second source electrode connecting electrode through connecting sheets;
and the drain electrode of the first P-type transistor and the drain electrode of the second P-type transistor are respectively and electrically connected with the first drain electrode connecting electrode and the second drain electrode connecting electrode through connecting sheets.
Optionally, the connecting piece comprises at least one of: welding gold wires, welding copper wires, welding aluminum strips and welding copper sheets.
Optionally, the package structure of the dc single-phase motor driving power device further includes an epoxy plastic package layer, where the epoxy plastic package layer is used for plastic packaging the lead frame, the first transistor group and the second transistor group.
The technical scheme of this embodiment is through integrated on a lead frame with 2P type transistors and 2N type transistors, realized with the circuit integration of single phase motor drive power device of direct current on a lead frame, when using single phase motor drive power device of direct current, need not to weld a plurality of transistors on printed circuit board again, only need with the packaging structure welding of full-bridge power device on printed circuit board can, the volume of printed circuit board has been reduced, and it is more convenient to make the line of walking of the printed circuit board of single phase motor drive power device of direct current more. 2P-type transistors and 2N-type transistors are integrated in the same lead frame unit, so that the rapid heat dissipation is facilitated, and the junction temperature of a direct-current single-phase motor driving power device is reduced. 2P type transistors and 2N type transistors are integrated together, and the product consistency is good. The DFN package has a direct heat dissipation channel for releasing heat in the package, which is beneficial to improving the heat dissipation effect of the package structure, thereby improving the heat dissipation effect of the printed circuit board. The technical scheme of the embodiment solves the problems that in the prior art, a plurality of transistors are welded on a printed circuit board, so that the printed circuit board occupies a large area and has poor heat dissipation; the printed circuit board has the advantages of reducing the occupied area of the printed circuit board using the direct-current single-phase motor driving power device, improving the heat dissipation effect, reducing the complexity of the flat cable layout design and improving the consistency of the device.
Drawings
Fig. 1 is a schematic diagram of a packaging structure of a dc single-phase motor driving power device according to an embodiment of the present invention;
fig. 2 is a schematic circuit structure diagram of a packaging structure of the dc single-phase motor driving power device corresponding to fig. 1 according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a packaging structure of another dc single-phase motor driving power device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic diagram of an encapsulation structure of a dc single-phase motor driving power device provided by an embodiment of the present invention, referring to fig. 1, the encapsulation structure of the dc single-phase motor driving power device includes: the lead frame 100, the lead frame 100 includes a first base island 101 and a second base island 102, the first base island 101 and the second base island 102 are arranged in sequence along a first direction 1; a first transistor group 200, wherein the first transistor group 200 is located on the front surface of the first base island 101, and the first transistor group 200 comprises a first P-type transistor 201 and a first N-type transistor 202; the first P-type transistor 201 and the first N-type transistor 202 are sequentially arranged along the second direction 2; a second transistor group 300, the second transistor group 300 being located on the front surface of the second base island 102, wherein the second transistor group 300 includes a second P-type transistor 301 and a second N-type transistor 302; the second P-type transistor 301 and the second N-type transistor 302 are sequentially arranged along the second direction 2; wherein the second direction 2 is perpendicular to the first direction 1; the drains of the first P-type transistor 201 and the second P-type transistor 301 are electrically connected in series; the sources of the first P-type transistor 201 and the second P-type transistor 301 are electrically connected with the drains of the first N-type transistor 202 and the second N-type transistor 302 in a one-to-one correspondence manner; the drains of the first N-type transistor 202 and the second N-type transistor 302 serve as signal output terminals.
Specifically, the drains of the first P-type transistor 201 and the second P-type transistor 301 are electrically connected in series, so that the drains of the first P-type transistor 201 and the second P-type transistor 301 are connected to the outside, for example, may be connected to an ac power signal input terminal or a dc power signal input terminal.
The source of the first P-type transistor 201 and the drain of the first N-type transistor 202 are located on the surface of the transistor adjacent to the first base island 101, and the gate 2011 and the drain 2012 of the first P-type transistor 201 and the gate 2021 and the source 2023 of the first N-type transistor 202 are located on the surface of the transistor away from the first base island 101.
The source of the second P-type transistor 301 and the drain of the second N-type transistor 302 are located on the surface of the transistor adjacent to the second base island 102, and the gate 3011 and drain 3012 of the second P-type transistor 301 and the gate 3021 and source 3023 of the second N-type transistor 302 are located on the surface of the transistor remote from the second base island 102.
When the drain of the first N-type transistor 202 is in contact with the surface of the first base island 101, the drain of the second N-type transistor 302 is in contact with the surface of the second base island 102, and the first base island 101 and the second base island 102 can be conductive, the source of the first P-type transistor 201 and the source of the second P-type transistor 301 can be electrically connected with the drain of the first N-type transistor 202 and the drain of the second N-type transistor 302 in a one-to-one correspondence manner.
The drains of the first N-type transistor 202 and the second N-type transistor 302 are used as signal output terminals, which may be, for example, signal output terminals of a dc single-phase motor driving power device or dc power signal output terminals; that is, the first P-type transistor 201 and the second P-type transistor 301 convert the drain ac power signal of the first N-type transistor 202 and the second N-type transistor 302 into a dc power signal for output or convert the dc power signal into an ac power signal for output, thereby implementing the conversion of the power signal.
Fig. 2 is a schematic circuit structure diagram of a packaging structure of a single-phase direct current motor driving power device corresponding to fig. 1, referring to fig. 2, the single-phase direct current motor driving power device includes an upper bridge arm circuit and a lower bridge arm circuit, the upper bridge arm circuit includes a first P-type transistor 201 and a second P-type transistor 301, and the lower bridge arm circuit includes a first N-type transistor 202 and a second N-type transistor 302. The gate 2011 of the first P-type transistor 201, the gate 3011 of the second P-type transistor 301, the gate 2021 of the first N-type transistor 202, and the gate 3021 of the second N-type transistor 302 are connected to control signals. The drain 2012 of the first P-type transistor 201 and the drain 3012 of the second P-type transistor 301 are electrically connected in series and connected to a power source VCC as an ac signal input terminal. The source 2013 of the first P-type transistor 201 and the source 3013 of the second P-type transistor 301 are electrically connected to the drain 2022 of the first N-type transistor 202 and the drain 3022 of the second N-type transistor 302, respectively, in a one-to-one correspondence, and the drain 2022 of the first N-type transistor 202 and the drain 3022 of the second N-type transistor 302 serve as two signal output terminals, where a and B denote two signal output terminals. Fig. 2 shows only one circuit configuration of the dc single-phase motor drive power device, and is not limited.
In addition, the packaging form of the driving power device of the direct current single-phase motor is Double Flat No-lead (DFN), and DFN packaging is a latest electronic packaging process and adopts advanced Double-side or square Flat lead-free packaging. The DFN package has versatility to allow one or more semiconductor devices to be connected within a lead-free package.
The technical scheme of this embodiment is through integrated on a lead frame with 2P type transistors and 2N type transistors, realized with the circuit integration of single phase motor drive power device of direct current on a lead frame, when using single phase motor drive power device of direct current, need not to weld a plurality of transistors on printed circuit board again, only need with the packaging structure welding of full-bridge power device on printed circuit board can, the volume of printed circuit board has been reduced, and it is more convenient to make the line of walking of the printed circuit board of single phase motor drive power device of direct current more. 2P-type transistors and 2N-type transistors are integrated in the same lead frame unit, so that the rapid heat dissipation is facilitated, and the junction temperature of a direct-current single-phase motor driving power device is reduced. 2P type transistors and 2N type transistors are integrated together, and the product consistency is good. The DFN package has a direct heat dissipation channel for releasing heat in the package, which is beneficial to improving the heat dissipation effect of the package structure, thereby improving the heat dissipation effect of the printed circuit board. The technical scheme of the embodiment solves the problems that in the prior art, a plurality of transistors are welded on a printed circuit board, so that the printed circuit board occupies a large area and has poor heat dissipation; the printed circuit board has the advantages of reducing the occupied area of the printed circuit board using the direct-current single-phase motor driving power device, improving the heat dissipation effect, reducing the complexity of the flat cable layout design and improving the consistency of the device.
With continued reference to fig. 1, optionally, the package structure of the dc single-phase motor driving power device further includes 4 gate connection electrodes arranged in an insulating manner, where the gate connection electrodes include a first gate connection electrode 401, a second gate connection electrode 402, a third gate connection electrode 403, and a fourth gate connection electrode 404;
the first gate connection electrode 401 and the second gate connection electrode 402 are disposed in a first region of the lead frame 100; the third gate connection electrode 403 and the fourth gate connection electrode 404 are disposed in the second region of the lead frame 100; the first region and the second region are parallel to each other, and the first region and the second region are located on two sides of the first base island 101 and the second base island 102 along the second direction 2;
the first gate connection electrode 401 and the second gate connection electrode 402 are electrically connected to the gate 2011 of the first P-type transistor 201 and the gate 3011 of the second P-type transistor 301 in a one-to-one correspondence manner;
the third gate connection electrode 403 and the fourth gate connection electrode 404 are electrically connected to the gate 2021 of the first N-type transistor 202 and the gate 3021 of the second N-type transistor 302, respectively, in a one-to-one correspondence.
Specifically, the first gate connection electrode 401, the second gate connection electrode 402, the third gate connection electrode 403, and the fourth gate connection electrode 404 are electrically connected to the gate 2011 of the first P-type transistor 201, the gate 3011 of the second P-type transistor 301, the gate 2021 of the first N-type transistor 202, and the gate 3021 of the second N-type transistor 302, respectively, in a one-to-one correspondence, so that the gate 2011 of the first P-type transistor 201, the gate 3011 of the second P-type transistor 301, the gate 2021 of the first N-type transistor 202, and the gate 3021 of the second N-type transistor 302 can be led out to facilitate electrical connection with other devices.
With continued reference to fig. 1, optionally, the package structure of the dc single-phase motor driving power device further includes:
a first source connection electrode 501 and a second source connection electrode 502, the first source connection electrode 501 and the second source connection electrode 502 being electrically connected to the source 2023 of the first N-type transistor 202 and the source 3023 of the second N-type transistor 302, respectively, in a one-to-one correspondence;
the first source connection electrode 501 and the second source connection electrode 502 are provided in the second region of the lead frame 100.
Specifically, the first source connection electrode 501 and the second source connection electrode 502 are electrically connected to the source 2023 of the first N-type transistor 202 and the source 3023 of the second N-type transistor 302, respectively, in a one-to-one correspondence, so that the source 2023 of the first N-type transistor 202 and the source 3023 of the second N-type transistor 302 can be led out for connection with other devices or grounding.
It should be noted that each source connection electrode includes two source connection electrode pins gathered together.
With continued reference to fig. 1, optionally, the package structure of the dc single-phase motor driving power device further includes:
a first drain connection electrode 601 and a second drain connection electrode 602, wherein the first drain connection electrode 601 and the second drain connection electrode 602 are respectively and correspondingly electrically connected with the drain 2012 of the first P-type transistor 201 and the drain 3012 of the second P-type transistor 301;
the first and second drain connection electrodes are disposed in the first region of the lead frame 100.
Specifically, the first drain connection electrode 601 and the second drain connection electrode 602 are electrically connected to the drain 2012 of the first P-type transistor 201 and the drain 3012 of the second P-type transistor 301 in a one-to-one correspondence manner, so that the drain 2012 of the first P-type transistor 201 and the drain 3012 of the second P-type transistor 301 can be led out, and the connection with an external power supply is facilitated.
It should be noted that each drain connection electrode includes two drain connection electrode leads that are gathered together.
With continued reference to fig. 1, optionally, the package structure of the dc single-phase motor driving power device further includes: a connecting piece 800, through which the gate 2011 of the first P-type transistor 201 and the gate 3011 of the second P-type transistor 301 are electrically connected to the first gate connection electrode 401 and the second gate connection electrode 402, respectively; the gate 2021 of the first N-type transistor 202 and the gate 3021 of the second N-type transistor 302 are electrically connected to the third gate connection electrode 403 and the fourth gate connection electrode 404, respectively, through a connection pad 800;
the source 2023 of the first N-type transistor 202 and the source 3023 of the second N-type transistor 302 are electrically connected to the first source connection electrode 501 and the second source connection electrode 502, respectively, via the connection pad 800;
the drain 2012 of the first P-type transistor 201 and the drain 3012 of the second P-type transistor 301 are electrically connected to the first drain connection electrode 601 and the second drain connection electrode 602, respectively, via the connection pad 800.
The connecting sheet 800 has a heat conduction function, and can enhance the heat dissipation effect of the packaging structure of the direct-current single-phase motor driving power device. The arrangement of the connecting sheet 800 can also reduce the difficulty of the wiring design of the printed circuit board.
Optionally, the connecting piece comprises at least one of: welding gold wires, welding copper wires, welding aluminum strips and welding copper sheets.
Fig. 3 is a schematic diagram of another encapsulation structure of a dc single-phase motor driving power device provided in an embodiment of the present invention, referring to fig. 3, optionally, the encapsulation structure of the dc single-phase motor driving power device further includes: a first output electrode 701 and a second output electrode 702, the first output electrode 701 and the second output electrode 702 being electrically connected to a drain of the first N-type transistor and a drain of the second N-type transistor, respectively;
the first output electrode 701 and the second output electrode 702 are disposed on the back surfaces of the first base island and the second base island, where the back surfaces are the surfaces of the first base island and the second base island where no transistor is disposed.
Specifically, the first output electrode 701 and the second output electrode 702 are electrically connected to the drain of the first N-type transistor and the drain of the second N-type transistor, respectively, so that signals output from the drains of the first N-type transistor and the second N-type transistor can be output to other devices through the first output electrode 701 and the second output electrode 702.
With continued reference to fig. 3, optionally, the package structure of the dc single-phase motor driving power device further includes an epoxy molding layer 900, and the epoxy molding layer 900 is used to mold the lead frame 100, the first transistor group, and the second transistor group.
Specifically, the epoxy molding layer 900 is formed by epoxy resin, and the epoxy molding layer 900 can protect the packaging structure of the dc single-phase motor driving power device from being damaged during transportation. After the epoxy plastic package layer 900 is formed by using epoxy resin, the excess epoxy plastic package layer 900 can be removed in a cutting manner, so that the first gate connecting electrode 401, the second gate connecting electrode 402, the third gate connecting electrode 403, the fourth gate connecting electrode 404, the first source connecting electrode 501, the second source connecting electrode 502, the first drain connecting electrode 601, the second drain connecting electrode 602, the first output electrode 701 and the second output electrode 702 can be exposed, connection with other devices is facilitated, rapid heat dissipation is facilitated, and reduction of the temperature of a packaging structure of a direct-current single-phase motor driving power device is facilitated.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (8)
1. The utility model provides a packaging structure of single phase motor drive power device of direct current which characterized in that includes:
the lead frame comprises a first base island and a second base island, wherein the first base island and the second base island are sequentially arranged along a first direction;
a first transistor group located on the front side of the first base island, wherein the first transistor group comprises a first P-type transistor and a first N-type transistor; the first P-type transistor and the first N-type transistor are sequentially arranged along a second direction;
a second transistor group located on a front side of the second base island, wherein the second transistor group includes a second P-type transistor and a second N-type transistor; the second P-type transistor and the second N-type transistor are sequentially arranged along a second direction;
wherein the second direction is perpendicular to the first direction;
the drains of the first and second P-type transistors are electrically connected in series;
the source electrodes of the first P-type transistor and the second P-type transistor are electrically connected with the drain electrodes of the first N-type transistor and the second N-type transistor in a one-to-one correspondence mode;
and the drains of the first N-type transistor and the second N-type transistor are used as signal output ends.
2. The package structure of the single-phase direct current motor driving power device according to claim 1, further comprising 4 gate connection electrodes arranged in an insulating manner, wherein the gate connection electrodes comprise a first gate connection electrode, a second gate connection electrode, a third gate connection electrode and a fourth gate connection electrode;
the first gate connection electrode and the second gate connection electrode are disposed in a first region of the lead frame; the third gate connection electrode and the fourth gate connection electrode are disposed in a second region of the lead frame; the first region and the second region are parallel to each other, and the first region and the second region are located on two sides of the first base island and the second base island along a second direction;
the first grid electrode connecting electrode and the second grid electrode connecting electrode are respectively and correspondingly electrically connected with the grid electrode of the first P-type transistor and the grid electrode of the second P-type transistor one by one;
the third gate connecting electrode and the fourth gate connecting electrode are respectively and correspondingly electrically connected with the gate of the first N-type transistor and the gate of the second N-type transistor one by one.
3. The package structure of the dc single-phase motor driving power device according to claim 2, further comprising:
the first source electrode connecting electrode and the second source electrode connecting electrode are respectively and correspondingly electrically connected with the source electrode of the first N-type transistor and the source electrode of the second N-type transistor one by one;
the first source connection electrode and the second source connection electrode are disposed in a second region of the lead frame.
4. The package structure of the single-phase direct current motor driving power device according to claim 3, further comprising:
the first drain electrode connecting electrode and the second drain electrode connecting electrode are respectively and correspondingly electrically connected with the drain electrode of the first P-type transistor and the drain electrode of the second P-type transistor one by one;
the first drain connection electrode and the second drain connection electrode are disposed in a first region of the lead frame.
5. The package structure of the single-phase direct current motor driving power device according to claim 4, further comprising:
a first output electrode and a second output electrode electrically connected to a drain of the first N-type transistor and a drain of the second N-type transistor, respectively;
the first output electrode and the second output electrode are disposed on the back surfaces of the first base island and the second base island, wherein the back surfaces are surfaces on which the transistors are not disposed on the first base island and the second base island.
6. The package structure of the single-phase direct current motor driving power device according to claim 5, further comprising: the grid electrode of the first P-type transistor and the grid electrode of the second P-type transistor are respectively and electrically connected with the first grid electrode connecting electrode and the second grid electrode connecting electrode through the connecting sheets; the grid electrode of the first N-type transistor and the grid electrode of the second N-type transistor are respectively and electrically connected with the third grid electrode connecting electrode and the fourth grid electrode connecting electrode through connecting pieces;
the source electrode of the first N-type transistor and the source electrode of the second N-type transistor are respectively and electrically connected with the first source electrode connecting electrode and the second source electrode connecting electrode through connecting sheets;
and the drain electrode of the first P-type transistor and the drain electrode of the second P-type transistor are respectively and electrically connected with the first drain electrode connecting electrode and the second drain electrode connecting electrode through connecting sheets.
7. The package structure of the single-phase direct current motor driving power device according to claim 6, wherein the connecting sheet comprises at least one of: welding gold wires, welding copper wires, welding aluminum strips and welding copper sheets.
8. The package structure of the dc single-phase motor driving power device according to claim 1, further comprising an epoxy molding layer, wherein the epoxy molding layer is used for molding the lead frame, the first transistor group, and the second transistor group in a plastic manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220371189.5U CN216849933U (en) | 2022-02-23 | 2022-02-23 | Packaging structure of direct current single phase motor drive power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220371189.5U CN216849933U (en) | 2022-02-23 | 2022-02-23 | Packaging structure of direct current single phase motor drive power device |
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Address after: Room 608, 6th Floor, No. 39 Yonghe Road, Yuzui Town, Jiangbei District, Chongqing 400020 Patentee after: Chongqing Yuntong Technology Co.,Ltd. Address before: 518000 Room 401, building 1, xiehechang District B, No. 5, Baodong Road, xiuxin community, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Yuntong Technology Co.,Ltd. |