CN214848626U - Lower bridge connection structure of IPM module, IPM module and electronic equipment - Google Patents
Lower bridge connection structure of IPM module, IPM module and electronic equipment Download PDFInfo
- Publication number
- CN214848626U CN214848626U CN202121195951.0U CN202121195951U CN214848626U CN 214848626 U CN214848626 U CN 214848626U CN 202121195951 U CN202121195951 U CN 202121195951U CN 214848626 U CN214848626 U CN 214848626U
- Authority
- CN
- China
- Prior art keywords
- bridge
- chip
- under
- lower bridge
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Inverter Devices (AREA)
Abstract
The utility model provides a lower bridge connection structure of IPM module, IPM module and electronic equipment, the lower bridge connection structure of IPM module includes base plate, lower bridge chip, common terminal pad, lower bridge pin, first connecting wire and second connecting wire; a bridging conductor part is arranged on the substrate; each lower bridge pin is electrically connected with the lower bridge chip, an emitter of the lower bridge chip is electrically connected with one end of each first connecting wire, the other end of each first connecting wire is electrically connected with each bridging conductor part in a one-to-one correspondence mode, each bridging conductor part is electrically connected with one end of each second connecting wire in a one-to-one correspondence mode, and the other end of each second connecting wire is electrically connected with the common end bonding pad. The bridging conductor part which is not connected with other metal elements on the substrate is arranged on the substrate, so that the emitter of the lower bridge chip can be connected to the common terminal pad through the first connecting wire and the second connecting wire, the current induced by the emitter is avoided, the switching-on speed is prevented from being influenced, and the loss is prevented from being increased slowly due to switching-on.
Description
Technical Field
The utility model relates to a IPM module technical field, in particular to lower bridge connection structure, IPM module and electronic equipment of IPM module.
Background
At present, in the application test and use process of all IPM (Intelligent Power Module) modules in the market, the lower bridge switch loss is larger than that of the upper bridge, mainly because the emitter of the lower bridge IGBT (Insulated Gate Bipolar Transistor) lacks and is similar to the structure of the upper bridge, is not connected with the IC VS end, and is not grounded. As shown in fig. 1, a back-emf (VLE ═ LE ═ dID/dt) is generated during turn-on, which is a function of the emitter lead inductance (lemmitter) and the drain current slope (dID/dt). The VGE voltage drop is caused by the back-emf voltage, and after the VGE voltage drop acts on the IGBT chip, the switching speed, especially the turn-on speed, is reduced, and the loss is increased.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide a lower bridge connection structure of an IPM module, and an electronic apparatus.
A lower bridge connection structure of an IPM module, comprising: the circuit comprises a substrate, at least one lower bridge chip, a common terminal bonding pad, at least one lower bridge pin, at least one first connecting wire and at least one second connecting wire;
the lower bridge chip, the common end bonding pad and each lower bridge pin are arranged on the substrate;
the substrate is provided with at least one bridging conductor part, and each bridging conductor part is respectively arranged at intervals with the lower bridge chip, the common end and each lower bridge pin;
each lower bridge pin is electrically connected with the lower bridge chip, the lower bridge chip is provided with an emitting electrode, the emitting electrode of the lower bridge chip is electrically connected with one end of each first connecting wire, the other end of each first connecting wire is electrically connected with each bridging conductor part in a one-to-one correspondence manner, each bridging conductor part is electrically connected with one end of each second connecting wire in a one-to-one correspondence manner, and the other end of each second connecting wire is electrically connected with the common terminal bonding pad.
In one embodiment, the lower bridge chip includes a lower bridge IGBT chip and a lower bridge FRD chip, the lower bridge IGBT chip and the lower bridge FRD chip are both disposed on the substrate, each lower bridge pin is electrically connected to the lower bridge FRD chip, the lower bridge FRD chip is electrically connected to the lower bridge IGBT chip, the lower bridge IGBT chip has an emitter, and the emitter of the lower bridge IGBT chip is electrically connected to one end of each first connecting wire, the end being away from the bridging conductor portion.
In one embodiment, the number of the lower bridge chip, the lower bridge pins, the first connecting wires, the second connecting wires and the bridging conductor parts is three, each of the lower bridge pins is electrically connected to one of the lower bridge chips, and each of the lower bridge chips is electrically connected to the common terminal pad sequentially through one of the first connecting wires, one of the bridging conductor parts and one of the second connecting wires.
In one embodiment, the three lower bridge pins are the NU pin, NV pin, and NW pin.
In one embodiment, the three bridge conductor portions are all disposed between the lower bridge chip and the common terminal pad, and the three bridge conductor portions are disposed at intervals with the lower bridge chip and the common terminal respectively.
In one embodiment, three bridge conductor portions are arranged side by side between the lower bridge chip and the common terminal pad.
In one embodiment, each of the bridge conductor portions is disposed between the lower bridge chip and the common terminal pad, and each of the bridge conductor portions is disposed at an interval from the lower bridge chip and the common terminal pad.
In one embodiment, the chip module further includes a low-voltage chip and third connecting wires, the lower bridge chips are spaced from the low-voltage chip, each of the lower bridge chips is electrically connected to the low-voltage chip through one of the third connecting wires, and each of the bridging conductor portions is disposed between the lower bridge chip and the low-voltage chip.
An IPM module comprising the lower bridge connection structure of the IPM module described in any one of the above embodiments.
An electronic device comprising the IPM module described in any one of the above embodiments.
According to the lower bridge connecting structure of the IPM module, the IPM module and the electronic equipment, the bridging conductor part which is not connected with other metal elements on the substrate is arranged on the substrate, so that the emitter of the lower bridge chip can be connected to the common end bonding pad through the first connecting wire and the second connecting wire, and in the lower bridge opening process, the current induced by the emitter is avoided, the VGE voltage reduction is avoided, the opening speed is effectively avoided being influenced, and the loss increase caused by the slow opening is avoided.
Drawings
Fig. 1 is a schematic diagram illustrating connection and voltage variation of a lower bridge IGBT emitter of a lower bridge chip of a conventional IPM module;
FIG. 2 is a schematic structural diagram of a lower bridge connection structure of an IPM module in one embodiment;
fig. 3 is a schematic diagram of connection and voltage variation of an emitter of a lower bridge IGBT chip of a lower bridge connection structure of an IPM module in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Example one
In this embodiment, as shown in fig. 2, a lower bridge connection structure of an IPM module is provided, including: a substrate 100, at least one under bridge chip 200, a common terminal pad 300, at least one under bridge pin 250, at least one first connection wire 310, and at least one second connection wire 320; the lower bridge chip 200, the common terminal pad 300 and each of the lower bridge pins 250 are disposed on the substrate 100; at least one bridging conductor portion 330 is disposed on the substrate 100, and each bridging conductor portion 330 is disposed at an interval with the lower bridge chip 200, the common terminal, and each lower bridge pin 250; each of the lower bridge leads 250 is electrically connected to the lower bridge chip 200, the lower bridge chip 200 has an emitter, the emitter of the lower bridge chip 200 is electrically connected to one end of each of the first connecting wires 310, the other end of each of the first connecting wires 310 is electrically connected to each of the bridging conductor portions 330 in a one-to-one correspondence, each of the bridging conductor portions 330 is electrically connected to one end of each of the second connecting wires 320 in a one-to-one correspondence, and the other end of each of the second connecting wires 320 is electrically connected to the common terminal pad 300.
Specifically, the substrate 100 is a DBC (Direct Bonding Copper clad laminate), and the lower bridge chip 200, the upper bridge chip, the Low Voltage chip 410, the High Voltage chip 420, the pads, the pins, and other electrical elements are disposed on the substrate 100, for example, the Low Voltage chip 410 is a LVIC (Low Voltage Integrated Circuit), and the High Voltage chip 420 is an HVIC (High Voltage Integrated Circuit).
The substrate 100 is an insulating substrate 100, and the bridging conductor portion 330 disposed on the substrate 100 is made of a metal material, so that the bridging conductor portion 330 can conduct electricity, and the bridging conductor portion 330 may also be referred to as a pad. The bridging conductor portion 330 is spaced apart from the electrical components on the substrate 100, so that the bridging conductor portion 330 is not connected to the electrical components on the substrate 100, thereby preventing short circuit caused by the bridging conductor portion 330. The common terminal pad 300 may also be referred to as a com pad, and the common terminal pad 300 is the common terminal pad 300 corresponding to the lower bridge chip 200.
In this embodiment, the emitter of the bottom bridge die 200 is connected to the bridge conductor portion 330 through the first connection wire 310, and the bridge conductor portion 330 is connected to the common terminal pad 300 through the second connection wire 320, so that the emitter of the bottom bridge die 200 is connected to the common terminal pad 300.
In this embodiment, the bridging conductor portion 330 that is not connected to other metal elements on the substrate 100 is disposed on the substrate 100, so that the emitter of the lower bridge chip 200 can be connected to the common pad 300 through the first connecting wire 310 and the second connecting wire 320, and in the process of opening the lower bridge, the emitter induced current is avoided, thereby avoiding influencing the voltage drop of VGE, effectively avoiding influencing the opening speed, and avoiding increasing the loss due to slow opening.
In one embodiment, the under-bridge chip 200 includes an under-bridge IGBT (Insulated Gate Bipolar Transistor) chip 210 and a under-bridge FRD (Fast Recovery Diode) chip 220, the under-bridge IGBT chip and the under-bridge FRD chip 220 are both disposed on the substrate 100, each of the under-bridge leads 250 is electrically connected to the under-bridge FRD chip 220, the under-bridge FRD chip 220 is electrically connected to the under-bridge IGBT chip 210, the under-bridge IGBT chip 210 has an emitter, and the emitter of the under-bridge IGBT chip 210 is electrically connected to one end of each of the first connecting wires 310, which is far away from the bridge conductor portion.
In one embodiment, the number of the lower bridge chip 200, the lower bridge lead 250, the first connecting wire 310, the second connecting wire 320 and the bridging conductor portion 330 is three, each of the lower bridge leads 250 is electrically connected to one of the lower bridge chips 200, and each of the lower bridge chips 200 is electrically connected to the common terminal pad 300 sequentially through one of the first connecting wire 310, one of the bridging conductor portions 330 and one of the second connecting wires 320.
In this embodiment, the lower bridge chip 200 includes three lower bridge IGBT chips 210 and three lower bridge FRD chips 220, each of the lower bridge pins 250 is connected to the lower bridge FRD chip 220, each of the lower bridge FRD chips 220 is connected to an IGBT chip, an emitter of each of the IGBT chips is connected to a first connecting wire 310, each of the first connecting wires 310 is connected to a bridging conductor portion 330, each of the bridging conductor portions 330 is connected to a second connecting wire 320, and each of the second connecting wires 320 is connected to a common terminal pad 300. In this embodiment, the three lower bridge pins 250 are respectively an NW pin, an NV pin, and an NU pin.
In one embodiment, three bridge conductor portions 330 are disposed between the bottom bridge chip 200 and the common terminal pad 300, and the three bridge conductor portions 330 are disposed at intervals with the bottom bridge chip 200 and the common terminal, respectively. In this embodiment, the lower bridge IGBT chip 210 and the common terminal pad 300 are spaced apart from each other, and three of the bridging conductor portions 330 are located between the lower bridge IGBT chip 210 and the common terminal pad 300, so that the bridging conductor portions 330 can be close to the lower bridge IGBT chip 210 and the common terminal pad 300, the lengths of the first connecting wire 310 and the second connecting wire 320 can be effectively shortened, and the signal transmission efficiency can be effectively improved.
In one embodiment, three bridge conductor portions 330 are disposed side by side between the bottom bridge chip 200 and the common terminal pad 300. In this embodiment, the three bridging conductor parts 330 are arranged at intervals, and the three bridging conductor parts 330 are arranged side by side, so that the three lower bridge IGBT chips 210 and the three bridging conductor parts 330 are conveniently connected through the first connecting wires 310.
In one embodiment, each of the bridge conductor portions 330 is disposed between the bottom bridge chip 200 and the common terminal pad 300, and each of the bridge conductor portions 330 is disposed at a distance from the bottom bridge chip 200 and the common terminal pad 300. In this embodiment, the bridging conductor portion 330 may be two, four or five or six,
in one embodiment, the lower bridge connection structure of the IPM module further includes a low-voltage chip 410 and a third connection wire, the lower bridge chip 200 and the low-voltage chip 410 are disposed at an interval, each of the lower bridge chips 200 is electrically connected to the low-voltage chip 410 through the third connection wire, and each of the bridge conductor portions 330 is disposed between the lower bridge chip 200 and the low-voltage chip 410.
In this embodiment, the low voltage chip 410 is an LVIC, and in addition, the lower bridge connection structure of the IPM module further includes a high voltage chip 420, the lower bridge IGBT chip 210 and the low voltage chip 410 are disposed at an interval, the low voltage chip 410 and the lower bridge FRD chip 220 are respectively located on two sides of the lower bridge IGBT chip 210, and the common terminal pad 300 is located on one side of the low voltage chip 410 away from the lower bridge IGBT chip 210. In this embodiment, the under bridge pin 250 and the common terminal pad 300 are respectively disposed at two sides of the under bridge chip 200, that is, the under bridge IGBT chip 210 and the under bridge FRD chip 220 are located between the under bridge pin 250 and the common terminal pad 300. By disposing the bridge conductor portion 330 between the lower bridge IGBT chip 210 and the low voltage chip 410, the distance between the bridge conductor portion 330 and the lower bridge IGBT chip 210 and the common terminal pad 300 can be effectively shortened.
In one embodiment, an IPM module is provided, comprising the lower bridge connection structure of the IPM module described in any one of the above embodiments.
In one embodiment, an electronic device is provided, comprising an IPM module as described in any one of the above embodiments.
In the above embodiments, the bridge conductor portion that is not connected to other metal elements on the substrate 100 is disposed on the substrate 100, so that the emitter of the lower bridge chip 200 can be connected to the common pad 300 through the first connection wire 310 and the second connection wire 320, and in the lower bridge turning-on process, the emitter induced current is avoided, thereby avoiding influencing the voltage drop of VGE, effectively avoiding influencing the turning-on speed, and avoiding increasing the loss due to slow turning-on.
In one embodiment, referring to fig. 2, a small-diameter bonding wire is added to the emitters of the three IGBT chips of the lower bridge, and a bridging pad is disposed on the DBC and internally connected to the COM terminal pad of the lower bridge chip. At this time, the pins of the NU, the NV and the NW originally led out by the module are pins connected with the COM end, and external leads are not needed to be connected.
1) Designing:
chip design: according to the product performance and functions, functional chips with proper specifications are designed, wherein the functional chips comprise an upper bridge drive HVIC chip, a lower bridge drive LVIC chip, a power side chip IGBT, an FRD chip and a bootstrap diode which are connected with the power side chip IGBT in an anti-parallel mode;
designing a substrate: the design method has the main change that three bridging pads are added on the basis of the original DBC substrate, the three pads are not connected with other metals of the substrate to keep electric insulation, and the purpose is to lead out the lower bridge IGBT emitter to be connected to com, as shown in figure 3, in the lower bridge opening process, the induced current of the emitter cannot influence the voltage drop of VGE, the opening speed cannot be influenced, and the loss increase caused by slow opening is avoided.
Product appearance design: and determining the length, width and height of the product and the design of the conductive bonding pads according to the shape and size of the substrate and the layout design of the substrate chip, and finally determining the appearance of the output product.
Designing a lead frame: according to the functions and the internal structure of the product, a lead frame of the product is designed, and a bonding pad and a lead frame of a corresponding lead-out pin are designed according to the bonding wire.
Designing a mold: and designing a mold required by product plastic package according to the product plastic package mode and the product appearance.
2) Assembling: firstly, assembling the power side chip and the substrate, carrying out die bonding on the chip, then carrying out die bonding on the drive side chip and the drive side pin pad, and carrying out lead welding on the drive IC chip and the power side pin pad.
3) Packaging: and (3) carrying out embedding plastic package by using an injection molding press, a mold and a plastic package material to finish embedding package of the assembled substrate, carrying out curing molding to finish packaging after the injection molding is finished, and finally carrying out rib cutting and bending molding on the pins to form the product required by the design.
The above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit the scope of the present invention, and although the present invention is described in detail with reference to the preferred examples, those skilled in the art should understand that the technical solutions of the present invention can be extended.
In the above embodiment, the transmitting terminal of the lower bridge power chip is separated from the transmitting line on the load side from the position close to the field IGBT chip, and is directly connected to the lower bridge driver IC chip and the COM terminal inside the module, so that the effect of being not easily affected by the driving voltage is achieved. The position near the emitter terminal IGBT chip is externally combined and separated from the emitter wire at the load end, so that the connection inductance of the internal emitter is reduced, the IGBT chip realizes high switching speed, and the efficiency of the high-efficiency medium-sized to large-sized switching power supply is further improved. Namely: three bonding wires are led out from the emitting electrodes of the three IGBT chips of the lower bridge independently and are connected to the COM end of the drive IC chip of the lower bridge to be grounded, the bonding wires are separated from the source line on the load side, the bonding wires with smaller wire diameters are adopted, so that the passing of small current is achieved, and the stray inductance of the loop is reduced. The module is connected from the inside, so that the connection of an external circuit can be avoided, the stray inductance generated by an external circuit is reduced, the module is connected from the inside, pins do not need to be additionally arranged, a die does not need to be changed, the increase of the process cost can be avoided, and the operability is high.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the utility model. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A lower bridge connecting structure of an IPM module, comprising: the circuit comprises a substrate, at least one lower bridge chip, a common terminal bonding pad, at least one lower bridge pin, at least one first connecting wire and at least one second connecting wire;
the lower bridge chip, the common end bonding pad and each lower bridge pin are arranged on the substrate;
the substrate is provided with at least one bridging conductor part, and each bridging conductor part is respectively arranged at intervals with the lower bridge chip, the common end and each lower bridge pin;
each lower bridge pin is electrically connected with the lower bridge chip, the lower bridge chip is provided with an emitting electrode, the emitting electrode of the lower bridge chip is electrically connected with one end of each first connecting wire, the other end of each first connecting wire is electrically connected with each bridging conductor part in a one-to-one correspondence manner, each bridging conductor part is electrically connected with one end of each second connecting wire in a one-to-one correspondence manner, and the other end of each second connecting wire is electrically connected with the common terminal bonding pad.
2. The under-bridge connection structure of an IPM module of claim 1, wherein said under-bridge chip includes an under-bridge IGBT chip and an under-bridge FRD chip, said under-bridge IGBT chip and said under-bridge FRD chip are both disposed on said substrate, each of said under-bridge pins is electrically connected to said under-bridge FRD chip, said under-bridge FRD chip is electrically connected to said under-bridge IGBT chip, said under-bridge IGBT chip has an emitter, and said emitter of said under-bridge IGBT chip is electrically connected to an end of each of said first connecting wires, said end being away from said bridging conductor portion.
3. The under-bridge connection structure of an IPM module according to claim 1, wherein the number of said under-bridge chip, said under-bridge pin, said first connecting wire, said second connecting wire and said bridging conductor portion is three, respectively, each of said under-bridge pin is electrically connected to one of said under-bridge chips, and each of said under-bridge chips is electrically connected to said common terminal pad sequentially through one of said first connecting wire, one of said bridging conductor portion and one of said second connecting wire.
4. The under-bridge connection structure of an IPM module as claimed in claim 3, wherein three said under-bridge pins are NU pin, NV pin and NW pin.
5. The under-bridge connection structure of an IPM module of claim 3, wherein three of said bridge conductor portions are disposed between said under-bridge chip and said common terminal pad, and three of said bridge conductor portions are disposed at intervals from said under-bridge chip and said common terminal, respectively.
6. The under-bridge connection structure of an IPM module according to claim 5, wherein three of said bridge conductor portions are arranged side by side between said under-bridge chip and said common terminal pad.
7. The under-bridge connection structure of an IPM module according to any one of claims 1 to 6, wherein each of said bridge conductor portions is disposed between said under-bridge chip and said common terminal pad, and each of said bridge conductor portions is disposed at a distance from said under-bridge chip and said common terminal pad, respectively.
8. The under-bridge connection structure of an IPM module according to any one of claims 1 to 6, further comprising a low voltage chip and a third connection wire, said under-bridge chip being disposed apart from said low voltage chip, each of said under-bridge chips being electrically connected to said low voltage chip through one of said third connection wires, each of said bridge conductor portions being disposed between said under-bridge chip and said low voltage chip.
9. An IPM module, comprising the lower bridge connection structure of IPM module recited in any one of claims 1 to 8.
10. An electronic device comprising the IPM module recited in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121195951.0U CN214848626U (en) | 2021-05-31 | 2021-05-31 | Lower bridge connection structure of IPM module, IPM module and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121195951.0U CN214848626U (en) | 2021-05-31 | 2021-05-31 | Lower bridge connection structure of IPM module, IPM module and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214848626U true CN214848626U (en) | 2021-11-23 |
Family
ID=78781420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121195951.0U Active CN214848626U (en) | 2021-05-31 | 2021-05-31 | Lower bridge connection structure of IPM module, IPM module and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214848626U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115799238A (en) * | 2022-11-17 | 2023-03-14 | 海信家电集团股份有限公司 | Power module and electronic device |
-
2021
- 2021-05-31 CN CN202121195951.0U patent/CN214848626U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115799238A (en) * | 2022-11-17 | 2023-03-14 | 海信家电集团股份有限公司 | Power module and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7153649B2 (en) | Power semiconductor modules with low gate path inductance | |
| CN104637931B (en) | Semiconductor packages and its manufacture method including transistor chip module and driver chip module | |
| JP2020519024A (en) | Half bridge module having coaxial arrangement of DC terminals | |
| CN107958901B (en) | Mould pressing intelligent power module | |
| US20010045627A1 (en) | Semiconductor device package with plural pad lead frame | |
| CN100461401C (en) | Sesmiconductor device | |
| CN104637891B (en) | Including two semiconductor modules and the semiconductor packages for extending laterally connector | |
| US8582317B2 (en) | Method for manufacturing a semiconductor component and structure therefor | |
| US20030107120A1 (en) | Intelligent motor drive module with injection molded package | |
| CN102201401B (en) | Semiconductor device | |
| CN103972184B (en) | Chip layout and chip package | |
| CN107851661A (en) | The physical topological structure of power converter | |
| CN108123620B (en) | Inverter switching device with gate coil for enhanced common source inductance | |
| CN214848626U (en) | Lower bridge connection structure of IPM module, IPM module and electronic equipment | |
| JP5407674B2 (en) | Semiconductor device | |
| CN210723007U (en) | Lead frame for integrated power module | |
| CN115411018B (en) | Power semiconductor device packaging structure for optimizing parasitic parameters | |
| JP3648954B2 (en) | Semiconductor device | |
| CN213094567U (en) | Copper bar assembly and motor controller | |
| CN109427744B (en) | IPM module, vehicle and manufacturing method of IPM module | |
| JP3525823B2 (en) | Mounting structure of complementary IGBT | |
| CN215578555U (en) | Intelligent power device and frequency conversion equipment | |
| CN216849933U (en) | Packaging structure of direct current single phase motor drive power device | |
| CN216849934U (en) | Packaging structure of full-bridge power device | |
| CN218071918U (en) | Multi-dimensional intelligent power module packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |