CN216563157U - Solar cell back surface structure and TBC back contact solar cell - Google Patents
Solar cell back surface structure and TBC back contact solar cell Download PDFInfo
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- CN216563157U CN216563157U CN202123242786.2U CN202123242786U CN216563157U CN 216563157 U CN216563157 U CN 216563157U CN 202123242786 U CN202123242786 U CN 202123242786U CN 216563157 U CN216563157 U CN 216563157U
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Abstract
The utility model discloses a solar cell back surface structure.A first tunneling oxide layer and a p + doping layer are sequentially covered on the back surface of a silicon wafer, a first notch is formed in the first tunneling oxide layer and the p + doping layer locally, and a first silicon nitride layer is covered on one side of the p + doping layer far away from the first tunneling oxide layer and on the side surfaces of the first tunneling oxide layer and the p + doping layer close to the first notch; a second groove is formed in the first silicon nitride layer covering one side, far away from the first tunneling oxide layer, of the p + doped layer, and a second tunneling oxide layer is arranged in the second groove; and n + doped layers are arranged between adjacent first silicon nitride layers in the first open groove and in the second open groove, a second silicon nitride layer is arranged on the n + doped layer, and a silver electrode is arranged corresponding to the second silicon nitride layer. The back structure of the solar cell can well reduce silver metal puncture and reduce metal recombination of the cell.
Description
Technical Field
The utility model belongs to the technical field of photovoltaic module production and manufacturing, and particularly relates to a solar cell back structure and a TBC back contact solar cell comprising the solar cell back structure.
Background
The rapid development of new energy materials is the key to realizing the carbon neutralization idea, and the solar cell becomes the choice of a new era due to the unique advantages of the solar cell. Solar cells, also known as photovoltaic cells, can convert solar energy directly into electrical energy, the principle of which is the photovoltaic effect of semiconductor PN junctions. Low cost and high efficiency are always the continuous pursuits in the process of industrialization of solar cells. Open circuit voltage, current density, and fill factor are key parameters for the efficiency of a crystalline silicon cell. The conventional back contact IBC structure battery has higher short-circuit current (due to no grid line shading on the front surface)>41mA/cm2) (ii) a A passivated contact structure cell, good passivation effect, very low metal recombination and higher open-circuit voltage>735mV)。
However, the conventional back contact IBC structure cell and the passivated contact structure cell have their own disadvantages, and no product combining the advantages of the back contact IBC structure cell and the passivated contact structure cell appears in the existing cell structure.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide a solar cell back surface structure and a TBC back contact structure crystalline silicon solar cell, which can reduce metal recombination of the cell and increase an open circuit voltage of the cell.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a first tunneling oxide layer and a p + doping layer are sequentially covered on the back of a silicon wafer, a first groove is formed in the first tunneling oxide layer and the p + doping layer locally, and a first silicon nitride layer covers one side of the p + doping layer far away from the first tunneling oxide layer and the side faces of the first tunneling oxide layer and the p + doping layer close to the first groove;
a second groove is formed in the first silicon nitride layer covering one side, far away from the first tunneling oxide layer, of the p + doped layer, and a second tunneling oxide layer is arranged in the second groove;
and n + doped layers are arranged between adjacent first silicon nitride layers in the first open groove and in the second open groove, a second silicon nitride layer is arranged on the n + doped layer, and a silver electrode is arranged corresponding to the second silicon nitride layer.
According to some preferred implementation aspects of the utility model, the region of the back surface of the silicon wafer corresponding to the n + doped layer is provided with a third tunneling oxide layer.
According to some preferred aspects of the utility model, a third trench is provided between the n + doped layer corresponding to the first trench and the n + doped layer corresponding to the second trench.
According to some preferred aspect of the utility model, the n + doped layer in the first trench and the n + doped layer in the second trench extend outwardly to the same height.
According to some preferred embodiments of the present invention, the ends of the plurality of silver electrodes are located at the same height.
According to some preferred embodiments of the present invention, the first tunneling oxide layer and the second tunneling oxide layer are made of SiO2The thickness is 1 to 3 nm.
According to some preferred embodiments of the present invention, the p + doped layer is formed by in-situ doping using a plate-type or tubular PECVD method, and the thickness of the p + doped layer is 40 to 300 nm; the n + doping layer is formed by adopting plate-type or tubular PECVD (plasma enhanced chemical vapor deposition) in-situ doping, and the thickness of the n + doping layer is 40-300 nm.
According to some preferred embodiments of the utility model, the silicon wafer is an N-type silicon wafer.
The utility model also provides a TBC back contact solar cell comprising a solar cell backside structure as described above.
According to some preferred implementation aspects of the utility model, the silicon wafer comprises a passivation antireflection layer positioned on the front surface of the silicon wafer, and the passivation antireflection layer is Al2O3And the dielectric layer is formed by one or more of SiNx, SiOxNy and SiOx.
Compared with the prior art, the utility model has the advantages that: according to the preparation method of the solar cell, the front side of the prepared cell is not shielded by any metal grid line, and is not compounded by any doping, so that the current density and the open-circuit voltage of the cell can be well improved; the back adopts the structure of passivation contact, and the metal puncture of silver can be fine reduced, reduces the metal complex of battery, improves the open circuit voltage of battery.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a cell structure after step (1) of a method for manufacturing an N-TBC back contact solar cell in an embodiment of the present invention.
FIG. 2 is a schematic diagram of the cell structure after step (2) of the N-TBC back contact solar cell manufacturing method in the embodiment of the present invention.
FIG. 3 is a schematic diagram of the cell structure after step (3) of the N-TBC back contact solar cell manufacturing method in the embodiment of the present invention.
FIG. 4 is a schematic diagram of the cell structure after step (4) of the method for manufacturing an N-TBC back contact solar cell in the embodiment of the present invention.
FIG. 5 is a schematic diagram of the cell structure after step (5) of the method for manufacturing an N-TBC back contact solar cell in the embodiment of the present invention.
FIG. 6 is a schematic diagram of the cell structure after step (6) of the method for manufacturing an N-TBC back contact solar cell in the embodiment of the present invention.
FIG. 7 is a schematic diagram of the cell structure after step (7) of the method for manufacturing an N-TBC back contact solar cell in the embodiment of the present invention.
FIG. 8 is a schematic diagram of the cell structure after step (8) of the method for manufacturing an N-TBC back contact solar cell in the embodiment of the present invention.
Fig. 9 is a schematic diagram of the cell structure after step (9) of the preparation method of the N-TBC back contact solar cell in the embodiment of the present invention.
FIG. 10 is a schematic structural diagram of an N-TBC back contact solar cell in an embodiment of the present invention.
Wherein the reference numerals include: the structure comprises an N-type silicon wafer-1, a front passivation anti-reflection layer-2, a first tunneling oxide layer-3, a p + doped layer-4, a first groove-5, a first silicon nitride layer-6, a second groove-7, a second tunneling oxide layer-8, a third tunneling oxide layer-9, an N + doped layer-10, a second silicon nitride layer-11, a third groove-12 and a silver electrode-13.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
EXAMPLE 1N-TBC Back contact solar cell
As shown in fig. 1 to 10, the N-TBC back contact solar cell in this embodiment includes an N-type silicon wafer 1, a passivation anti-reflection layer deposited on the front surface of the N-type silicon wafer 1, a first tunneling oxide layer 3 disposed on the back surface of the N-type silicon wafer 1, a p + doping layer 4, a second tunneling oxide layer 8, a first silicon nitride layer 6, an N + doping layer 10, a second silicon nitride layer 11, a silver electrode 13, and a third tunneling oxide layer 9 embedded in the back surface of a portion of the N-type silicon wafer 1.
Wherein the resistivity of the N-type silicon wafer 1 is 0.5-15 omega cm, and the thickness is 50-300 um. All tunneling oxide layers are made of SiO 21 to 3nm in thickness and SiO2The growth method of (2) is a high-temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method or a CVD deposition method; heavily doped p + poly Si (p + doped layer 4) and n + poly Si (n + doped layer 10) using plate or tube PECVD in-situ doping, boron source BH3The flow rate is 100-1000 sccm, and the pH of the phosphorus source3The flow rate is 100-1000 sccm; the thickness of the poly Si is 40-300 nm.
In this embodiment, the passivation anti-reflection layer 2 on the front surface of the silicon wafer is Al2O3Dielectric layer of SiNx, SiOxNy, SiOx, AlO2The dielectric film has a thickness of 2-15 nm, SiNx thickness of 1-80 nm, SiOxNy thickness of 1-80 nm, and SiOx thickness of 1-50 nm. Depositing a layer of Al with the thickness of 2-15 nm on the front surface of the N-type crystal silicon substrate2O3Dielectric film, second in Al2O3And depositing the SiNx/SiOxNy/SiOx dielectric film on the dielectric film by using PECVD equipment, wherein the SiNx/SiOxNy/SiOx dielectric film is a single-layer dielectric film or a multi-layer dielectric film, and the deposition is not performed in sequence.
The structure of the back surface of the N-type silicon wafer 1 in this embodiment is specifically as follows:
the back surface of the N-type silicon wafer 1 is sequentially covered with a first tunneling oxide layer 3 and a p + doping layer 4, the thickness of the first tunneling oxide layer 3 is 2nm, the thickness of the p + doping layer 4 is 100nm, a first notch 5 is formed in the first tunneling oxide layer 3 and the p + doping layer 4 locally, a first silicon nitride layer 6 covers on one side, away from the first tunneling oxide layer 3, of the p + doping layer 4 and on the side, close to the first notch 5, of the first tunneling oxide layer 3 and the side, close to the first notch 5, of the p + doping layer 4, and the preferable thickness is 80 nm.
The first silicon nitride layer 6 covering the p + doped layer 4 far from the first tunneling oxide layer 3 is provided with a second groove 7, and the second groove 7 is internally provided with a second tunneling oxide layer 8, preferably with the thickness of 2 nm.
An N + doped layer 10 is arranged between the adjacent first silicon nitride layers 6 in the first grooves 5 and in the second grooves 7, the thickness is preferably 100nm, and a third tunneling oxide layer 9 is arranged on the back surface of the N-type silicon wafer 1 in a region corresponding to the N + doped layer 10, and the thickness is preferably 2 nm. The n + doped layer 10 in the first trench 5 and the n + doped layer 10 in the second trench 7 extend outwards to the same height, and a second silicon nitride layer 11, preferably 150nm thick, is provided on the n + doped layer 10, and silver electrodes 13 are provided corresponding to the second silicon nitride layer 11, all silver electrodes 13 also being located at the same height. A third trench 12 is present between the n + doped layer 10 corresponding to the first trench 5 and the n + doped layer 10 corresponding to the second trench 7.
That is, the cell in this example comprises an N-type crystalline silicon substrate, Al on the front surface of the N-type silicon substrate2O3The double-layer or multi-layer passivation antireflection film of SiNx, SiOxNy, SiOx and the like sequentially comprises back contact tunnel junctions (-SiO) which are arranged in a cross way from inside to outside on the back surface of an N-type silicon substrate2-p+poly Si-SiO2-n + poly Si) and back contact-n + poly Si, a back passivation film, and a metallic silver electrode 13.
The front surface of the N-TBC back contact structure crystalline silicon solar cell of the embodiment is not shielded by any metal grid line, and is not compounded by any doping, so that the current density and the open-circuit voltage of the cell can be well improved; the back adopts the structure of passivation contact, and the metal puncture of reduction silver that can be fine reduces the metal complex of battery, improves the open circuit voltage of battery, when improving battery efficiency, has practiced thrift the cost of battery.
EXAMPLE 2 preparation of N-TBC Back contact solar cell
The embodiment provides a method for preparing an N-TBC back contact solar cell based on embodiment 1, which specifically includes the following steps:
(1) sequentially carrying out damage removal, texturing, cleaning and back polishing treatment on the N-type silicon wafer 1
Selecting an N-type silicon substrate, removing a mechanical damage layer and oil stains by using an alkaline solution, and then carrying out conventional texturing and cleaning; the N-type silicon back surface is then subjected to a hot alkali polishing process as shown in fig. 1.
The resistivity of the N-type crystalline silicon substrate selected in this example was 6 Ω · cm, and the thickness was 180 um.
(2) Preparing a first tunneling oxide layer 3 and a p + doped layer 4
As shown in fig. 2, a first tunneling oxide layer 3 and a heavily doped p + doped layer 4(p + poly Si) are grown on the back surface of the N-type crystalline silicon substrate processed in the step (1), and high-temperature annealing is performed, wherein the peak temperature of annealing is 1000 ℃, the annealing time is 100min, and the ambient atmosphere is N2And O2。
The thickness of the first tunnel oxide layer 3 is 2 nm. The heavily doped p + doping layer 4 adopts a plate type or a tube typePECVD in-situ doping, boron source BH3The flow rate is 800 sccm; the p + doped layer 4 is 100nm thick.
(3) First laser opening
As shown in fig. 3, the back surface of the N-type crystalline silicon substrate processed in step (2) is subjected to a film opening process by using laser, and a first trench 5 is partially opened on the first tunneling oxide layer 3 and the p + doped layer 4, and is cleaned. The laser wavelength used was 532 nm.
(4) Depositing a first silicon nitride layer 6
And (4) depositing a silicon nitride film of 80nm, namely a first silicon nitride layer 6, on the back surface of the N-type crystal silicon substrate treated in the step (3).
The first silicon nitride layer 6 covers the side of the p + doped layer 4 far from the first tunnel oxide layer 3 and the side surfaces of the first tunnel oxide layer 3 and the p + doped layer 4 close to the first trench 5, as shown in fig. 4.
(5) Second laser opening
As shown in fig. 5, the back surface of the N-type crystalline silicon substrate processed in step (4) is subjected to a film opening process by a laser, and a second trench 7 is opened in the first silicon nitride layer 6 and cleaned. The laser wavelength used was 532 nm.
(6) Preparing a second tunneling oxide layer 8, a third tunneling oxide layer 9 and an n + doped layer 10
As shown in fig. 6, a second tunnel oxide layer 8 is grown in the second trench 7. And because the first laser film opening causes damage to the back of the N-type silicon wafer 1, the second tunneling oxide layer 8 grows while the third tunneling oxide layer 9 grows on the back of the N-type silicon wafer 1 corresponding to the first open groove 5, the damage to the back of the N-type silicon wafer 1 caused by the first laser film opening can be repaired, and the quality and the power generation efficiency of the silicon wafer are improved.
Growing heavily doped N + poly Si to form an N + doped layer 10, and performing high-temperature annealing treatment, wherein the annealing peak temperature is 700-900 ℃, the annealing time is 30-200 min, and the environment atmosphere is N2And O2. An n + doped layer 10 covers the surface of the first silicon nitride layer 6 and fills the first trench 5 and the second trench 7.
Second tunnel oxide layer 8 and third tunnel oxide layerThe thickness of layer 9 is 2 nm. Heavily doped n + doped layer 10 is doped in situ by plate or tubular PECVD, phosphorus source PH3The flow rate is 800 sccm; the thickness of the n + doped layer 10 is 100 nm.
The first tunneling oxide layer 3, the second tunneling oxide layer 8 and the third tunneling oxide layer 9 are all made of SiO2Preferably 1 to 3nm in thickness and SiO2The growth method of (3) is a high-temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method or a CVD deposition method.
(7) Preparing a second silicon nitride layer 11
As shown in fig. 7, a silicon nitride film of 150nm is deposited on the surface of the n + doped layer 10 to form a second silicon nitride layer 11, and then cleaned.
(8) Depositing a front passivation anti-reflection film
As shown in FIG. 8, on the front surface of the N-type crystalline silicon substrate treated in the step (7), a double-layer or multi-layer passivated anti-reflection film Al is deposited2O3The number of layers and the thickness of the passivation antireflection film/SiNx/SiOxNy/SiOx can be prepared according to actual conditions.
(9) Third laser film opening
As shown in fig. 9, the back surface of the N-type crystalline silicon substrate treated in step (8) is subjected to an opening process using a laser on the N + doped layer 10 and the second silicon nitride layer 11 to form a third opening 12, and then cleaned. The laser wavelength used was 355 nm.
(10) And a printed silver electrode 13
And (4) printing a silver electrode 13 on the back surface of the N-type crystal silicon substrate processed in the step (9) corresponding to the N + poly Si region to form ohmic contact, and finishing the manufacture of the N-TBC back contact solar cell, as shown in FIG. 10.
The utility model relates to a crystalline silicon solar cell with an N-TBC back contact structure, which comprises an N-type crystalline silicon substrate; the front surface of the N-type silicon substrate is Al2O3Double-layer or multi-layer passivation antireflection films such as SiNx, SiOxNy and SiOx; the back surface of the N-type silicon substrate sequentially comprises back contact tunnel junctions (-SiO) which are arranged in a cross way from inside to outside2-p+poly Si-SiO2-n + poly Si) and back contact-n + poly Si, a back passivation film, and a metallic silver electrode.
The front surface of the N-TBC back contact structure crystalline silicon solar cell is not shielded by any metal grid line, and is not compounded by any doping, so that the current density and the open-circuit voltage of the cell can be well improved; the back adopts the structure of passivation contact, and the metal puncture of silver can be fine reduced, reduces the metal complex of battery, improves the open circuit voltage of battery. The utility model integrates the advantages of the traditional back contact IBC battery and the passivated contact battery structure, simplifies the process flow, improves the battery efficiency and saves the battery cost.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the utility model, and not to limit the scope of the utility model, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the scope of the present invention.
Claims (9)
1. The back surface structure of the solar cell is characterized in that a first tunneling oxide layer and a p + doping layer are sequentially covered on the back surface of a silicon wafer, a first groove is formed in the first tunneling oxide layer and the p + doping layer partially, and a first silicon nitride layer covers the side, far away from the first tunneling oxide layer, of the p + doping layer and the side, close to the first groove, of the first tunneling oxide layer and the side, close to the first groove, of the p + doping layer;
a second groove is formed in the first silicon nitride layer covering one side, far away from the first tunneling oxide layer, of the p + doped layer, and a second tunneling oxide layer is arranged in the second groove;
and n + doped layers are arranged between adjacent first silicon nitride layers in the first open groove and in the second open groove, a second silicon nitride layer is arranged on the n + doped layer, and a silver electrode is arranged corresponding to the second silicon nitride layer.
2. The solar cell backside structure of claim 1 wherein: and the region of the back surface of the silicon wafer corresponding to the n + doped layer is provided with a third tunneling oxide layer.
3. The solar cell backside structure of claim 1 wherein: and a third slot is formed between the n + doped layer corresponding to the first slot and the n + doped layer corresponding to the second slot.
4. The solar cell backside structure of claim 1 wherein: and the n + doped layer in the first open groove and the n + doped layer in the second open groove extend outwards to the same height.
5. The solar cell backside structure of claim 1 wherein: the ends of the silver electrodes are located at the same height.
6. The solar cell backside structure of claim 1 wherein: the first tunneling oxide layer and the second tunneling oxide layer are made of SiO2The thickness is 1 to 3 nm.
7. The solar cell backside structure of claim 1 wherein: the p + doping layer is formed by adopting plate-type or tubular PECVD (plasma enhanced chemical vapor deposition) in-situ doping, and the thickness of the p + doping layer is 40-300 nm; the n + doping layer is formed by adopting plate-type or tubular PECVD (plasma enhanced chemical vapor deposition) in-situ doping, and the thickness of the n + doping layer is 40-300 nm.
8. The solar cell backside structure according to any of claims 1-7, wherein: the silicon wafer is an N-type silicon wafer.
9. A TBC back contact solar cell, characterized by: a solar cell back side structure according to any of claims 1-8 is included.
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