CN216559335U - Infrared-visible light double-color switching up-conversion imaging focal plane device - Google Patents

Infrared-visible light double-color switching up-conversion imaging focal plane device Download PDF

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CN216559335U
CN216559335U CN202122589008.4U CN202122589008U CN216559335U CN 216559335 U CN216559335 U CN 216559335U CN 202122589008 U CN202122589008 U CN 202122589008U CN 216559335 U CN216559335 U CN 216559335U
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quantum dot
infrared
light
color
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唐鑫
牟鸽
郝群
陈梦璐
温崇
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Beijing Institute of Technology BIT
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Beijing Institute of Technology BIT
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Abstract

The utility model relates to an infrared-visible light double-color switching up-conversion imaging focal plane device, which comprises a transparent conductive base layer, a first infrared detection unit, a second infrared detection unit, a first light-emitting unit and a second light-emitting unit, wherein the first infrared detection unit, the second infrared detection unit and the first light-emitting unit are arranged on the transparent conductive base layer in a stacking way and are sequentially connected with each other; the first light-emitting unit correspondingly emits visible light rays of a first color when the first infrared detection unit detects infrared light of a first waveband; the second light-emitting unit correspondingly emits visible light rays of a second color when the second infrared detection unit detects infrared light of a second waveband; the first wavelength band is different from the second wavelength band, and the first color is different from the second color; and the power supply mode of the focusing plane device is switched to realize the infrared image display of different colors. Therefore, the infrared light detection of different wave bands is switched by switching the power supply mode of the device, and the infrared image is converted into the visible light image of different colors.

Description

Infrared-visible light double-color switching up-conversion imaging focal plane device
Technical Field
The disclosure relates to the technical field of photoelectric sensors, in particular to an infrared-visible light double-color switching up-conversion imaging focal plane device.
Background
The infrared detection and imaging technology has wide application in the fields of remote sensing, night vision, guidance, biomedicine, geological detection, meteorological monitoring and the like, and especially the rapid development of recent augmented reality, virtual reality, machine vision, automatic driving, wearable intelligent equipment and the like puts forward higher requirements on the infrared detection and imaging technology.
The working principle of the conventional infrared imaging device is generally as follows: the infrared detector is used for obtaining infrared image information and converting the infrared image information into an electric signal, the electric signal is subjected to integration and other processing, a reading circuit is used for obtaining a digital signal, the digital circuit signal is converted into a visible light image for display, and infrared photons are converted into photoelectrons if an image tube and the like, and then the photoelectrons are converted into an image. However, the conventional infrared imaging device generally has a problem that only monochrome image display can be performed.
SUMMERY OF THE UTILITY MODEL
To solve the above technical problem or to at least partially solve the above technical problem, the present disclosure provides an infrared-visible light two-color switching up-conversion imaging focal plane device.
The present disclosure provides an infrared-visible light two-color switching up-conversion imaging focal plane device, which includes: the infrared detector comprises a transparent conductive base layer, a first infrared detection unit, a second infrared detection unit, a first light-emitting unit and a second light-emitting unit, wherein the first infrared detection unit, the second infrared detection unit and the first light-emitting unit are arranged on the transparent conductive base layer in a stacked mode and are sequentially connected;
the first light-emitting unit correspondingly emits visible light rays of a first color when the first infrared detection unit detects infrared light of a first waveband;
the second light-emitting unit correspondingly emits visible light rays of a second color when the second infrared detection unit detects infrared light of a second waveband;
wherein the first band of wavelengths is different from the second band of wavelengths, and the first color is different from the second color; and the power supply modes of the focal plane device are switched to realize the display of the infrared images with different colors.
In some embodiments, the focal plane device further comprises a power supply unit comprising a first connection and a second connection;
the first connecting end is electrically connected with the transparent conductive base layer, and the second connecting end is electrically connected with the common connection position of the first light-emitting unit and the second light-emitting unit;
by switching the bias direction of the first connection terminal and the second connection terminal of the power supply unit, the following effects are achieved:
the first infrared detection unit detects infrared light of the first waveband and emits visible light rays of a first color corresponding to the first light emitting unit; or alternatively
The second infrared detection unit detects the infrared light of the second waveband and emits visible light rays of a second color corresponding to the second light emitting unit.
In some embodiments, the power supply unit further comprises a power supply unit and a changeover switch;
the power supply unit comprises a positive electrode and a negative electrode;
the change-over switch comprises a first contact, a second contact, a third contact, a fourth contact, a fifth contact and a sixth contact, the second contact is connected with the negative electrode, the fifth contact is connected with the positive electrode, the third contact and the sixth contact are both connected with the first connecting end, and the first contact and the fourth contact are both connected with the second connecting end;
the fifth contact is connected with the fourth contact through the communication relation switching among the contacts, and meanwhile, the second contact is connected with the third contact;
or realize
The fifth contact closes the sixth contact, and the second contact closes the first contact.
In some embodiments, a first infrared quantum dot layer auxiliary carrier transport layer, a first infrared quantum dot layer, a second infrared quantum dot layer auxiliary carrier transport layer, a second infrared quantum dot layer, a third infrared quantum dot layer auxiliary carrier transport layer, an intermediate electrode layer, a first quantum dot light emitting layer auxiliary carrier transport layer, a second quantum dot light emitting layer auxiliary carrier transport layer, a transparent electrode layer, a third quantum dot light emitting layer auxiliary carrier transport layer, a second quantum dot light emitting layer, a fourth quantum dot light emitting layer auxiliary carrier transport layer, and a top electrode layer are stacked in sequence on the transparent conductive base layer;
wherein the intermediate electrode layer and the top electrode layer are in conductive communication at the device side and are electrically insulated from the transparent electrode layer;
the first infrared detection unit comprises a first infrared quantum dot layer subsidiary carrier transmission layer, a first infrared quantum dot layer and a second infrared quantum dot layer subsidiary carrier transmission layer;
the second infrared detection unit comprises a second infrared quantum dot layer subsidiary carrier transmission layer, a second infrared quantum dot layer and a third infrared quantum dot layer subsidiary carrier transmission layer;
the first light-emitting unit comprises an intermediate electrode layer, a first quantum dot light-emitting layer auxiliary carrier transmission layer, a first quantum dot light-emitting layer, a second quantum dot light-emitting layer auxiliary carrier transmission layer and a transparent electrode layer;
the second light-emitting unit comprises a transparent electrode layer, an auxiliary carrier transmission layer of a third quantum dot light-emitting layer, a second quantum dot light-emitting layer, an auxiliary carrier transmission layer of a fourth quantum dot light-emitting layer and a top electrode layer.
In some embodiments, the focal plane device further comprises an insulating blocking layer;
the insulating blocking layer and the transparent electrode layer are arranged on the same layer, and the insulating blocking layer is used for realizing electric insulation between the transparent electrode layer and the middle electrode layer.
In some embodiments, the first and third infrared quantum dot layer subsidiary carrier transport layers are hole transport layers and the second and third infrared quantum dot layer subsidiary carrier transport layers are electron transport layers, or the first and third infrared quantum dot layer subsidiary carrier transport layers are electron transport layers and the second infrared quantum dot layer subsidiary carrier transport layer is a hole transport layer;
and/or
The first quantum dot light emitting layer auxiliary carrier transmission layer and the third quantum dot light emitting layer auxiliary carrier transmission layer are electron transmission layers, and the second quantum dot light emitting layer auxiliary carrier transmission layer and the fourth quantum dot light emitting layer auxiliary carrier transmission layer are hole transmission layers; or the first quantum dot light emitting layer auxiliary carrier transmission layer and the third quantum dot light emitting layer auxiliary carrier transmission layer are hole transmission layers, and the second quantum dot light emitting layer auxiliary carrier transmission layer and the fourth quantum dot light emitting layer auxiliary carrier transmission layer are electron transmission layers.
In some embodiments, the transparent conductive base layer comprises ITO conductive glass, FTO conductive glass, or a flexible conductive base layer;
the infrared quantum dot layer comprises a plurality of layers of quantum dot films, the quantum dot films are subjected to liquid ligand exchange treatment, surface ligands are SH-short chain ligands, and the quantum dot films comprise at least one of HgTe quantum dot films, HgSe quantum dot films, PbS quantum dot films and PbSe quantum dot films; the infrared quantum dot layer is a first infrared quantum dot layer and a second infrared quantum dot layer;
the quantum dot light-emitting layer comprises at least one of a CdSe/ZnS quantum dot film, a CdSe/CdS/ZnS quantum dot film, a perovskite quantum dot film and an InP quantum dot film; the quantum dot light-emitting layer is a first quantum dot light-emitting layer and a second quantum dot light-emitting layer;
the material of the electron transport layer comprises at least one of zinc oxide nano-particles, tin oxide nano-particles and [6,6] -phenyl-C61-butyric acid isopropyl ester (PCBM);
the material of the hole transport layer comprises 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP) and MoO3Poly [ bis (4-phenyl) (4-butyl)Phenyl) amine (poly-TPD), 2', 7, 7' -tetrakis- (dimethoxydiphenylamine) -spirofluorene (Spiro), 3-hexyl-substituted polythiophene (P3HT), [9, 9-dioctylfluorene-co-N- [4- (3-methylpropyl)]Diphenylamines](TFB) and Polyvinylcarbazole (PVK);
the electrode layer comprises at least one of ITO, FTO and PEDOT/PSS; the electrode layers are a middle electrode layer, a transparent electrode layer and a top electrode layer;
the insulating blocking layer includes at least one of SU-8 photoresist, insulating oxide, and insulating nitride.
In some embodiments, the infrared quantum dot layer, the quantum dot light-emitting layer, the electron transport layer and the hole transport layer are prepared by a solution method or an evaporation method; the solution process includes spraying or printing;
the electrode layer and the insulation blocking layer are both prepared by adopting an evaporation method.
In some embodiments, the first band is the a-band and the second band is the B-band or the C-band;
or the first waveband is a B waveband, and the second waveband is an A waveband or a C waveband;
or the first waveband is a C waveband, and the second waveband is an A waveband or a B waveband;
wherein the content of the first and second substances,
the wavelength range of the A wave band is 0.7-2.5 μm;
the wavelength range of the B wave band is 3.0-5.0 μm;
the wavelength range of the C wave band is 8.0-12.0 μm.
In some embodiments, the first color is red and the second color is blue or green;
or, the first color is blue, and the second color is red or green;
alternatively, the first color is green and the second color is red or blue.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the device comprises a transparent conductive base layer, a first infrared detection unit, a second infrared detection unit, a first light-emitting unit and a second light-emitting unit, wherein the first infrared detection unit, the second infrared detection unit and the first light-emitting unit are arranged on the transparent conductive base layer in a stacked mode and are sequentially connected; the first light-emitting unit correspondingly emits visible light rays of a first color when the first infrared detection unit detects infrared light of a first waveband; the second light-emitting unit correspondingly emits visible light rays of a second color when the second infrared detection unit detects infrared light of a second waveband; wherein the first wavelength band is different from the second wavelength band, and the first color is different from the second color; and the infrared images with different colors are displayed by switching the power supply mode of the focusing plane device. Therefore, the switching of the detection of the infrared light of two different wave bands is realized by switching the power supply mode of the focusing plane device, and the infrared images of the different wave bands are converted into different images of monochromatic visible light; and structural devices of a reading circuit and digital signal processing are omitted, indium columns do not need to be welded, the device is simple and compact in structure, the manufacturing flow of the device is simplified, the process complexity is reduced, and the manufacturing cost is reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of an infrared-visible light two-color switching up-conversion imaging focal plane device provided in an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another infrared-visible light two-color switching up-conversion imaging focal plane device provided in the embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another infrared-visible light two-color switching up-conversion imaging focal plane device provided in an embodiment of the present disclosure.
Fig. 4 is a schematic diagram illustrating an operating principle of an infrared-visible light two-color switching up-conversion imaging focal plane device provided in an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a current direction when the infrared-visible light double-color switching up-conversion imaging focal plane device provided by the embodiment of the disclosure is connected with a power supply in a forward direction;
fig. 6 is a schematic diagram of a current direction when the infrared-visible light double-color switching up-conversion imaging focal plane device provided by the embodiment of the disclosure is reversely connected with a power supply;
fig. 7 is a schematic diagram illustrating the principle of switching between two different bands of infrared light detection provided by the embodiment of the present disclosure.
Wherein, 1, infrared-visible light double-color switching up-conversion imaging focal plane device; 2. a power supply unit; 3. an object focal plane; 4. an optical system; 5. a housing; 6. a visible light image; 11. a transparent conductive base layer; 12. a first infrared detection unit; 13. a second infrared detection unit; 14. a first light emitting unit; 15. a second light emitting unit; 16 an insulating blocking layer; 21. a first connection end; 22. a second connection end; 23. a power supply unit; 24. a switch; 121. the first infrared quantum dot layer is attached with a carrier transmission layer; 122. a first infrared quantum dot layer; 123. the second infrared quantum dot layer is attached with a carrier transmission layer; 131. a second infrared quantum dot layer; 132. the third infrared quantum dot layer is attached with a carrier transmission layer; 141. the intermediate electrode layer, 142, the first quantum dot light-emitting layer and the auxiliary carrier transmission layer; 143. a first quantum dot light emitting layer; 144. the second quantum dot light-emitting layer is attached with a carrier transmission layer; 145. a transparent electrode layer; 151. the third quantum dot light-emitting layer is attached to the carrier transport layer; 152. a second quantum dot light emitting layer; 153. the fourth quantum dot light-emitting layer is attached to the carrier transport layer; 154. a top electrode layer.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
In combination with the background art, the conventional infrared imaging device includes an infrared imaging readout circuit and a digital signal processing and displaying structure, which results in a bulky device structure and increases the manufacturing cost of the device. In addition, infrared imaging techniques such as tubes further increase the device volume by providing a motion channel for photoelectron multiplication, and introduce a certain amount of noise due to the photoelectron motion by the external photoelectric effect. However, the infrared up-conversion device in the prior art which does not need a reading circuit can only display a monochrome image, and the detected wavelength range is limited by materials.
Aiming at least one of the defects, the infrared-visible light double-color switching up-conversion imaging focal plane device provided by the embodiment of the disclosure comprises a transparent conductive base layer, a first infrared detection unit, a second infrared detection unit, a first light emitting unit and a second light emitting unit, wherein the first infrared detection unit, the second infrared detection unit and the first light emitting unit are stacked on the transparent conductive base layer and are sequentially connected with each other; the first light-emitting unit correspondingly emits visible light rays of a first color when the first infrared detection unit detects infrared light of a first waveband; when the second infrared detection unit detects the infrared light of the second waveband, the second light-emitting unit correspondingly emits visible light rays of a second color; wherein the first wavelength band is different from the second wavelength band, and the first color is different from the second color; and the power supply mode of the focusing plane device is switched to realize the infrared image display of different colors. Based on the method, the switching of the detection of the infrared light with two different wave bands is realized by switching the power supply mode of the focusing plane device, and simultaneously, the infrared images with different wave bands are converted into different images of monochromatic visible light; and structural devices of a reading circuit and digital signal processing are omitted, indium columns do not need to be welded, the device is simple and compact in structure, the manufacturing flow of the device is simplified, the process complexity is reduced, and the manufacturing cost is reduced.
The infrared-visible light two-color switching up-conversion imaging focal plane device provided by the embodiment of the disclosure is exemplarily described below with reference to fig. 1 to 7.
In some embodiments, as shown in fig. 1, a schematic structural diagram of an infrared-visible light two-color switching up-conversion imaging focal plane device provided for embodiments of the present disclosure is shown. Referring to fig. 1, the infrared-visible light double-color switching up-conversion imaging focal plane device includes a transparent conductive base layer 11, and a first infrared detection unit 12, a second infrared detection unit 13, a first light emitting unit 14, and a second light emitting unit 15, which are stacked on the transparent conductive base layer 11 and connected in sequence, and the second light emitting unit 15 is connected to the second infrared detection unit 13; the first light-emitting unit 14 correspondingly emits visible light rays of a first color when the first infrared detection unit detects 12 infrared light of a first wavelength band; when the second infrared detection unit 13 detects the infrared light of the second waveband, the second light emitting unit 15 correspondingly emits visible light rays of a second color; wherein the first wavelength band is different from the second wavelength band, and the first color is different from the second color; and the power supply mode of the focusing plane device is switched to realize the infrared image display of different colors.
In the embodiment, the switching of the detection of the infrared light of two different wave bands is realized by switching the power supply mode of the focusing plane device, and simultaneously, the infrared images of the different wave bands are converted into different images of monochromatic visible light; and structural devices of a reading circuit and digital signal processing are omitted, indium columns do not need to be welded, the device is simple and compact in structure, the manufacturing flow of the device is simplified, the process complexity is reduced, and the manufacturing cost is reduced.
It can be understood that fig. 1 only exemplarily shows two infrared detection units at the lower part and two light emitting units at the upper part of the device, but does not constitute a limitation on the method for preparing the infrared-visible light two-color switching up-conversion imaging focal plane device provided by the embodiments of the present disclosure; in other embodiments, the lower portion of the fabricated device is two light emitting units, and the upper portion is two infrared detecting units, which are not limited herein.
In some embodiments, as shown in fig. 1, the focal plane device further comprises a power supply unit 2, the power supply unit 2 comprising a first connection terminal 21 and a second connection terminal 22; the first connection terminal 21 is electrically connected to the transparent conductive base layer 11, and the second connection terminal 22 is electrically connected to a common connection point of the first light emitting unit 14 and the second light emitting unit 15; by switching the bias directions of the first connection terminal 21 and the second connection terminal 22 of the power supply unit 2, such that: the first infrared detection unit 12 detects infrared light of a first waveband, and emits visible light rays of a first color corresponding to the first light emitting unit 14; or the second infrared detection unit 13 detects the infrared light of the second waveband and emits the visible light ray of the second color corresponding to the second light emitting unit 15.
The infrared-visible light two-color switching up-conversion imaging focal plane device provided by this embodiment realizes switching of infrared light detection of two different wavebands by switching the bias directions of the first connection end and the second connection end of the power supply unit, and simultaneously converts infrared images of different wavebands into images of different monochromatic visible lights for display; and structural devices of a reading circuit and digital signal processing are omitted, indium columns do not need to be welded, the device is simple and compact in structure, the manufacturing flow of the device is simplified, the process complexity is reduced, and the manufacturing cost is reduced.
It can be understood that fig. 1 only shows the first connection terminal 21 electrically connected to the transparent conductive substrate 11 and the second connection terminal 22 electrically connected to the common connection point of the first light-emitting unit 14 and the second light-emitting unit 15, but does not constitute a limitation on the method for manufacturing the infrared-visible light double-color switching up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the first connection terminal 21 is electrically connected to a common connection point of the first light emitting unit 14 and the second light emitting unit 15, and the second connection terminal 22 is electrically connected to the transparent conductive base layer 11, which is not limited herein.
In some embodiments, as shown in fig. 2, a schematic structural diagram of another ir-vis two-color switching up-conversion imaging focal plane device provided by the embodiments of the present disclosure is shown. Referring to fig. 2, a first infrared quantum dot layer auxiliary carrier transport layer 121, a first infrared quantum dot layer 122, a second infrared quantum dot layer auxiliary carrier transport layer 123, a second infrared quantum dot layer 131, a third infrared quantum dot layer auxiliary carrier transport layer 132, an intermediate electrode layer 141, a first quantum dot light-emitting layer auxiliary carrier transport layer 142, a first quantum dot light-emitting layer 143, a second quantum dot light-emitting layer auxiliary carrier transport layer 144, a transparent electrode layer 145, a third quantum dot light-emitting layer auxiliary carrier transport layer 151, a second quantum dot light-emitting layer 152, a fourth quantum dot light-emitting layer auxiliary carrier transport layer 153, and a top electrode layer 154 are sequentially stacked on the transparent conductive base layer 11; wherein the middle electrode layer 141 and the top electrode layer 154 are in electrically conductive communication at the device side and are electrically insulated from the transparent electrode layer 145; the first infrared detection unit 12 includes a first infrared quantum dot layer subordinate carrier transport layer 121, a first infrared quantum dot layer 122, and a second infrared quantum dot layer subordinate carrier transport layer 123; the second infrared detection unit 13 includes a second infrared quantum dot layer subordinate carrier transport layer 123, a second infrared quantum dot layer 131, and a third infrared quantum dot layer subordinate carrier transport layer 132; the first light emitting unit 14 includes an intermediate electrode layer 141, a first quantum dot light emitting layer subsidiary carrier transport layer 142, a first quantum dot light emitting layer 143, a second quantum dot light emitting layer subsidiary carrier transport layer 144, and a transparent electrode layer 145; the second light emitting unit 15 includes a transparent electrode layer 145, a third quantum dot light emitting layer subsidiary carrier transport layer 151, a second quantum dot light emitting layer 152, a fourth quantum dot light emitting layer subsidiary carrier transport layer 153, and a top electrode layer 154.
The first infrared detection unit 12 and the second infrared detection unit 13 share the second infrared quantum dot layer subsidiary carrier transmission layer 123; the first light emitting unit 14 and the second light emitting unit 15 share the transparent electrode layer 145.
The infrared-visible light two-color switching up-conversion imaging focal plane device provided by this embodiment switches the bias direction of the power supply unit to realize the switching of infrared light detection of two different bands, and converts infrared images of different bands into images of different monochromatic visible lights for display; the pixelation treatment of the surface layer structure is not needed, the production cost is reduced, and the preparation flow is simplified; and structural devices of a reading circuit and digital signal processing are omitted, indium columns do not need to be welded, the device is simple and compact in structure, the manufacturing flow of the device is simplified, the process complexity is reduced, and the manufacturing cost is reduced. Meanwhile, the focal plane device generates a photon-generated carrier in the quantum dot light-emitting diode by utilizing the internal photoelectric effect, so that the noise of photoelectron motion generated by the external photoelectric effect such as an image tube is reduced.
In some embodiments, as shown in fig. 2, the focal plane device further comprises an insulating blocking layer; the insulating blocking layer and the transparent electrode layer are arranged on the same layer, and the insulating blocking layer is used for realizing electric insulation between the transparent electrode layer and the middle electrode layer.
Wherein the photoresist comprises at least one of SU-8 photoresist, insulating oxide and insulating nitride.
In some embodiments, as shown in fig. 3, a schematic structural diagram of another ir-vis two-color switch up-conversion imaging focal plane device provided by the embodiments of the present disclosure is shown. Referring to fig. 3, the power supply unit 2 further includes a power supply unit 23 and a changeover switch 24; the power supply unit 23 includes a positive electrode and a negative electrode; the change-over switch 24 comprises a first contact, a second contact, a third contact, a fourth contact, a fifth contact and a sixth contact, the second contact is connected with the negative electrode, the fifth contact is connected with the positive electrode, the third contact and the sixth contact are both connected with the first connecting end, and the first contact and the fourth contact are both connected with the second connecting end; the fifth contact is communicated with the fourth contact through the communication relation switching among the contacts, and meanwhile, the second contact is communicated with the third contact; or the fifth contact is connected with the sixth contact, and the second contact is connected with the first contact.
Wherein, the voltage value range of the power supply unit 23 is 2-20V, and the adjustment needs to be carried out according to the constitution of the finished product of the device; the power supply unit 2 further includes other circuit structures known to those skilled in the art, which are not limited and are not described herein.
Exemplarily, as shown in fig. 3, the power supply unit includes a first connection terminal 21 and a second connection terminal 22; the first connection terminal 21 is electrically connected with the transparent conductive substrate 11, and the second connection terminal 22 is electrically connected with the transparent electrode layer 145; the power supply unit 2 further comprises a power supply unit 23 and a change-over switch 24, the power supply unit comprises a positive electrode and a negative electrode, and the change-over switch 24 is a double-pole double-throw switch; the change-over switch 24 comprises a first contact, a second contact, a third contact, a fourth contact, a fifth contact and a sixth contact, the second contact is connected with the negative electrode, the fifth contact is connected with the positive electrode, the third contact and the sixth contact are both connected with the first connecting end 21, and the first contact and the fourth contact are both connected with the second connecting end 22; the fifth contact is communicated with the fourth contact through the communication relation switching among the contacts, and meanwhile, the second contact is communicated with the third contact; or the fifth contact is realized to switch on the sixth contact and the second contact switches on the first contact to switch the bias direction of the first connection terminal 21 and the second connection terminal 22 of the power supply unit and make: the first infrared quantum dot layer 122 detects infrared light of a first waveband, and emits visible light rays of a first color corresponding to the first quantum dot light-emitting layer 143; or the second infrared quantum dot layer 131 detects the infrared light of the second waveband and emits the visible light ray of the second color corresponding to the second quantum dot light-emitting layer 152.
It is to be understood that the change-over switch 24 is only exemplarily shown in fig. 3 as a double-pole double-throw switch, but does not constitute a limitation of the infrared-visible light double-color switching up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the switch 24 may be other types of switching devices known to those skilled in the art to meet the requirements of focal plane devices, and is not limited herein.
In some embodiments, as shown in fig. 2, the first and third infrared quantum dot layer subordinate carrier transport layers 121 and 132 are hole transport layers and the second and third infrared quantum dot layer subordinate carrier transport layers 123 are electron transport layers, or the first and third infrared quantum dot layer subordinate carrier transport layers 121 and 131 are electron transport layers and the second infrared quantum dot layer subordinate carrier transport layer 123 is a hole transport layer; and/or the first quantum dot light emitting layer subsidiary carrier transport layer 142 and the third quantum dot light emitting layer subsidiary carrier transport layer 151 are electron transport layers, and the second quantum dot light emitting layer subsidiary carrier transport layer 144 and the fourth quantum dot light emitting layer subsidiary carrier transport layer 153 are hole transport layers; or the first quantum dot light emitting layer auxiliary carrier transport layer 142 and the third quantum dot light emitting layer auxiliary carrier transport layer 151 are hole transport layers, and the second quantum dot light emitting layer auxiliary carrier transport layer 144 and the fourth quantum dot light emitting layer auxiliary carrier transport layer 153 are electron transport layers.
In some embodiments, as shown in fig. 4, a schematic diagram of a working principle of an infrared-visible light two-color switching up-conversion imaging focal plane device provided for the embodiments of the present disclosure is shown. Referring to the left portion of fig. 4, the transparent conductive base layer 11 includes ITO conductive glass, FTO conductive glass, or a flexible conductive base layer; the infrared quantum dot layer comprises a plurality of layers of quantum dot films, the quantum dot films are subjected to liquid ligand exchange treatment, surface ligands are SH-short chain ligands, and the quantum dot films comprise at least one of HgTe quantum dot films, HgSe quantum dot films, PbS quantum dot films and PbSe quantum dot films; the infrared quantum dot layers are a first infrared quantum dot layer 122 and a second infrared quantum dot layer 131; the quantum dot light-emitting layer comprises at least one of a CdSe/ZnS quantum dot film, a CdSe/CdS/ZnS quantum dot film, a perovskite quantum dot film and an InP quantum dot film; the quantum dot light emitting layers are a first quantum dot light emitting layer 143 and a second quantum dot light emitting layer 152; the electron transport layer comprises zinc oxide nanoparticles, tin oxide nanoparticles, [6,6]]-at least one of phenyl-C61-butyric acid methyl ester (PCBM); the hole transport layer comprises 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP) and MoO3Poly (TPD), poly [ bis (4-phenyl) (4-butylphenyl) amine (poly-TPD), 2', 7, 7' -tetrakis- (dimethoxydiphenylamine) -spirofluorene (Spiro), 3-hexyl-substituted polythiophene (P3HT), [9, 9-dioctylfluorene-co-N- [4- (3-methylpropyl)]Diphenylamines](TFB) and Polyvinylcarbazole (PVK); the electrode layer comprises at least one of ITO, FTO and PEDOT/PSS; the electrode layers are an intermediate electrode layer 141, a transparent electrode layer 145 and a top electrode layer 154; insulating blocking layer 16 comprises at least one of SU-8 photoresist, insulating oxide, and insulating nitride.
Illustratively, as shown in fig. 4, a first infrared quantum dot layer is sequentially stacked on a transparent conductive base layer 11The light-emitting diode comprises a sub carrier transmission layer 121, a first infrared quantum dot layer 122, a second infrared quantum dot layer auxiliary carrier transmission layer 123, a second infrared quantum dot layer 131, a third infrared quantum dot layer auxiliary carrier transmission layer 132, an intermediate electrode layer 141, a first quantum dot light-emitting layer auxiliary carrier transmission layer 142, a first quantum dot light-emitting layer 143, a second quantum dot light-emitting layer auxiliary carrier transmission layer 144, a transparent electrode layer 145, a third quantum dot light-emitting layer auxiliary carrier transmission layer 151, a second quantum dot light-emitting layer 152, a fourth quantum dot light-emitting layer auxiliary carrier transmission layer 153 and a top electrode layer 154; wherein the middle electrode layer 141 and the top electrode layer 154 are in electrically conductive communication at the device side and are electrically insulated from the transparent electrode layer 145; the insulating barrier layer 16 is provided in the same layer as the transparent electrode layer 145, and the insulating barrier layer 16 serves to electrically insulate the transparent electrode layer 145 from the intermediate electrode layer 141. The transparent conductive base layer 11, the middle electrode layer 141, the transparent electrode layer 145 and the top electrode layer 154 are made of ITO; the film layer structures of the first infrared quantum dot layer auxiliary carrier transmission layer 121, the third infrared quantum dot layer auxiliary carrier transmission layer 132, the second quantum dot light emitting layer auxiliary carrier transmission layer 144 and the fourth quantum dot light emitting layer auxiliary carrier transmission layer 153 are the same, and are all CBP film layer under and MoO film layer3CBP/MoO film layer on3A composite structure; the film structures of the second infrared quantum dot layer auxiliary carrier transmission layer 123, the first quantum dot light emitting layer auxiliary carrier transmission layer 142 and the third quantum dot light emitting layer auxiliary carrier transmission layer 151 are the same and are all ZnO nanoparticle film layers; the first infrared quantum dot layer 122 and the second infrared quantum dot layer 131 are respectively a short-wave HgTe quantum dot film and a long-wave HgTe quantum dot film; the first quantum dot light emitting layer 143 and the second quantum dot light emitting layer 152 are a CdSe/ZnS quantum dot film (R) and a CdSe/ZnS quantum dot film (B), respectively, and can emit red and blue visible lights.
It is to be understood that the various film layer materials are shown in fig. 4 by way of example only and do not constitute a definition of an infrared-visible light two-color switching up-conversion imaging focal plane device provided by embodiments of the present disclosure; in other embodiments, the materials of the respective layers may be configured to meet focal plane device requirements, other materials known to those skilled in the art, and are not limited herein.
As shown in fig. 4, the left side is a schematic structural diagram of the infrared-visible light two-color switching up-conversion imaging focal plane device, and the right side is an equivalent circuit diagram of the focal plane device. The first and second infrared quantum dot layers and their auxiliary structures (the first infrared quantum dot layer auxiliary carrier transmission layer 121, the first infrared quantum dot layer 122, the second infrared quantum dot layer auxiliary carrier transmission layer 123, the second infrared quantum dot layer 131, and the third infrared quantum dot layer auxiliary carrier transmission layer 132) can be equivalent to two diodes connected in reverse series, and the first and second quantum dot light-emitting layers and their auxiliary structures (the first quantum dot light-emitting layer auxiliary carrier transmission layer 142, the first quantum dot light-emitting layer 143, the second quantum dot light-emitting layer auxiliary carrier transmission layer 144, the third quantum dot light-emitting layer auxiliary carrier transmission layer 151, the second quantum dot light-emitting layer 152, and the fourth quantum dot light-emitting layer auxiliary carrier transmission layer 153) can be equivalent to two diodes connected in reverse parallel.
The conductive substrate layer 11 and the transparent electrode layer 145 of the infrared-visible light two-color switching up-conversion imaging focal plane device provided by this embodiment are respectively connected to a power supply unit, and when a power supply is connected in the forward direction, the current direction is as shown in fig. 5. Referring to fig. 5, the anode of the power supply unit 23 is connected to the transparent electrode layer 145, the cathode is connected to the transparent conductive base layer 11, the first infrared quantum layer 122 and the diode equivalent to the auxiliary structure thereof (the first infrared quantum dot layer auxiliary carrier transport layer 121, the first infrared quantum dot layer 122, and the second infrared quantum dot layer auxiliary carrier transport layer 123) work in the reverse bias state at this time, and when the first infrared quantum layer 122 receives corresponding infrared light, the diode is in the on state; at this time, the equivalent diodes of the second infrared quantum layer 131 and the subordinate structures thereof (the subordinate carrier transport layer 123 of the second infrared quantum dot layer, the second infrared quantum dot layer 131, and the subordinate carrier transport layer 132 of the third infrared quantum dot layer) are in a forward bias state, and are also turned on; then, current flows from the transparent electrode layer 145, and passes through the second quantum dot light emitting layer auxiliary carrier transmission layer 144, the first quantum dot light emitting layer 143, the first quantum dot light emitting layer auxiliary carrier transmission layer 142, the intermediate electrode layer 141, the first and second infrared quantum dot layers and their auxiliary structures, so that the equivalent diode of the first quantum dot light emitting layer 143 and its auxiliary structure (the first quantum dot light emitting layer auxiliary carrier transmission layer 142, the first quantum dot light emitting layer 143, and the second quantum dot light emitting layer auxiliary carrier transmission layer 144) emits light, and the equivalent diode of the second quantum dot light emitting layer 152 and its auxiliary structure (the third quantum dot light emitting layer auxiliary carrier transmission layer 151, the second quantum dot light emitting layer 152, and the fourth quantum dot light emitting layer auxiliary carrier transmission layer 153) does not work in a reverse polarization state and does not emit light; since the infrared quantum dot layer 122 and the first quantum dot light-emitting layer 143 are both area arrays and are vertically coupled, the infrared image received by the first infrared quantum dot layer 122 is displayed on the first quantum dot light-emitting layer 143.
When the power is switched in reverse, the current direction is as shown in fig. 6. Referring to fig. 6, the cathode of the power supply unit 2 is connected to the transparent electrode layer 145, the anode is connected to the transparent conductive base layer 11, and the diodes equivalent to the first infrared quantum dot layer 122 and the subordinate structures thereof (the first infrared quantum dot layer subordinate carrier transport layer 121, the first infrared quantum dot layer 122, and the second infrared quantum dot layer subordinate carrier transport layer 123) operate in a forward bias state at this time; at this time, the equivalent diodes of the second infrared quantum dot layer 131 and its subordinate structures (the subordinate carrier transport layer 123 of the second infrared quantum dot layer, the second infrared quantum dot layer 131, and the subordinate carrier transport layer 132 of the third infrared quantum dot layer) are in a reverse bias state, and when the second infrared quantum dot layer 131 receives the infrared light of the corresponding band, it is in conduction; then, the current flows in from the transparent conductive substrate layer 11, enters the second quantum dot light-emitting layer 152 and the diode equivalent to the auxiliary structure thereof through the first and second infrared quantum dot layers and the auxiliary structure thereof, the middle electrode layer 141 and the top electrode layer 154, and flows out from the transparent electrode layer 145; then, under the vertical coupling, the second quantum dot light emitting layer 152 displays the infrared image received by the second infrared quantum dot layer 131.
Illustratively, as shown in fig. 7, the principle diagram of switching between two different bands of infrared light detection is shown. Referring to fig. 7, the object space focal plane 3 of the infrared images of different wave bands is imaged on the image space focal plane of the optical system through the optical system 4, and the image space focal plane of the optical system coincides with the infrared quantum dot layer of the conversion imaging focal plane device 1 on the infrared-visible light bicolor switching; as shown in the lower half of fig. 7, when the power supply unit 2 is connected in the forward direction, that is, the positive electrode of the power supply unit 2 is connected to the transparent electrode layer 145, the negative electrode is connected to the transparent conductive base layer 11, the first quantum dot light emitting layer 143 displays the infrared image received by the first infrared quantum dot layer 122, and the color of the image displayed by the first quantum dot light emitting layer 143 is blue. As shown in the upper part of fig. 7, when the power supply unit 2 is turned on in the reverse direction, that is, the negative electrode of the power supply unit 2 is connected to the transparent electrode layer 145, the positive electrode is connected to the transparent conductive base layer 11, the second quantum dot light emitting layer 152 displays the infrared image received by the second infrared quantum dot layer 131, and the color of the image displayed by the second quantum dot light emitting layer 152 is red.
It can be understood that fig. 7 only exemplarily shows that the color of the image displayed by the first quantum dot light emitting layer 143 is blue, and the color of the image displayed by the second quantum dot light emitting layer 152 is red, but does not constitute a limitation of the infrared-visible light two-color switching up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in another embodiment, the color of the image displayed by the first quantum dot light emitting layer 143 may be a color other than blue, and the color of the image displayed by the second quantum dot light emitting layer 152 may be a color other than red, which is not limited herein.
In some embodiments, as shown in fig. 4, the infrared quantum dot layer, the quantum dot light emitting layer, the electron transport layer, and the hole transport layer are all prepared by a solution method or an evaporation method; solution processes include spraying or printing; the electrode layer and the insulation blocking layer are both prepared by adopting an evaporation method.
Due to the arrangement, the pixelation treatment on the surface layer structure of the device is not needed, the production cost is reduced, and the preparation flow is simplified.
Exemplarily, as shown in fig. 4, the first infrared quantum dot layer 122 and the second infrared quantum dot layer 131 are respectively a short-wave HgTe quantum dot film and a long-wave HgTe quantum dot film, and are prepared by a solution method; the first quantum dot light-emitting layer 143 and the second quantum dot light-emitting layer 152 are a CdSe/ZnS quantum dot film (R) and a CdSe/ZnS quantum dot film (B), respectively, and are prepared by a solution method; attached current-carrying of first infrared quantum dot layerThe film layer structures of the sub-transmission layer 121, the auxiliary carrier transmission layer 132 of the third infrared quantum dot layer, the auxiliary carrier transmission layer 144 of the second quantum dot light-emitting layer and the auxiliary carrier transmission layer 153 of the fourth quantum dot light-emitting layer are the same, and are all CBP film layer under and MoO film layer3CBP/MoO film layer on3The composite structure is prepared by adopting an evaporation method; the film layer structures of the second infrared quantum dot layer auxiliary carrier transmission layer 123, the first quantum dot light emitting layer auxiliary carrier transmission layer 142 and the third quantum dot light emitting layer auxiliary carrier transmission layer 151 are the same and are ZnO nanoparticle film layers, and the ZnO nanoparticle film layers are prepared by a solution method; the transparent conductive base layer 11, the intermediate electrode layer 141, the transparent electrode layer 145, the top electrode layer 154, and the insulating blocking layer 16 are all prepared by evaporation.
It is understood that the method for preparing each film layer is only exemplarily shown in fig. 4, but does not constitute a limitation of the infrared-visible light two-color switching up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the preparation method of each film layer may adopt other methods known to those skilled in the art, and is not limited herein.
In some embodiments, the first band is the a-band and the second band is the B-band or the C-band; or the first waveband is a B waveband, and the second waveband is an A waveband or a C waveband; or the first wave band is a C wave band, and the second wave band is an A wave band or a B wave band; wherein the wavelength range of the A wave band is 0.7-2.5 μm; the wavelength range of the B wave band is 3.0-5.0 μm; the wavelength range of the C wave band is 8.0-12.0 μm.
Illustratively, as shown in fig. 4, the first infrared quantum dot layer 122 and the second infrared quantum dot layer 131 are a short-wave HgTe quantum dot film and a long-wave HgTe quantum dot film, respectively, and then the first infrared quantum dot layer 122 detects that the infrared light of the first wavelength band is short-wave infrared light (having a wavelength range of 0.7 μm to 2.5 μm), and the second infrared quantum dot layer 131 detects that the infrared light of the second wavelength band is long-wave infrared light (having a wavelength range of 3.0 μm to 5.0 μm or 8.0 μm to 12.0 μm).
It can be understood that fig. 4 only exemplarily shows that the first infrared quantum dot layer 122 detects the infrared light of the first wavelength band as short-wave infrared light, and the second infrared quantum dot layer 131 detects the infrared light of the second wavelength band as long-wave infrared light, but does not constitute a limitation on the infrared-visible light conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the wavelengths of the bands detected by the first infrared quantum dot layer 122 and the second infrared quantum dot layer 131 may be other bands known to those skilled in the art, and are not limited herein.
In some embodiments, the first color is red and the second color is blue or green; or the first color is blue and the second color is red or green; alternatively, the first color is green and the second color is red or blue.
Exemplarily, as shown in fig. 4, the first quantum dot light emitting layer 143 and the second quantum dot light emitting layer 152 are a CdSe/ZnS quantum dot film (R) and a CdSe/ZnS quantum dot film (B), respectively, and the first color visible light emitted from the first quantum dot light emitting layer 143 is blue, and the first color visible light emitted from the second quantum dot light emitting layer 152 is red.
Illustratively, as shown in fig. 7, the first color visible light emitted from the first quantum dot light emitting layer 143 is blue, and the first color visible light emitted from the second quantum dot light emitting layer 152 is red.
It can be understood that fig. 4 or fig. 7 only exemplarily shows that the first color visible light emitted by the first quantum dot light-emitting layer 143 is blue, and the first color visible light emitted by the second quantum dot light-emitting layer 152 is red, but does not constitute a limitation of the infrared-visible light two-color conversion up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the first color may be one of three colors of red, green, and blue, the second color may be one of the remaining two colors, or the first color and the second color may be two different colors known to those skilled in the art, and are not limited thereto.
It is noted that, in this document, relational terms such as "first" and "second," and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. The infrared-visible light double-color switching up-conversion imaging focal plane device is characterized by comprising a transparent conductive base layer, a first infrared detection unit, a second infrared detection unit, a first light emitting unit and a second light emitting unit, wherein the first infrared detection unit, the second infrared detection unit and the first light emitting unit are stacked on the transparent conductive base layer and are sequentially connected with one another;
the first light-emitting unit correspondingly emits visible light rays of a first color when the first infrared detection unit detects infrared light of a first waveband;
the second light-emitting unit correspondingly emits visible light rays of a second color when the second infrared detection unit detects infrared light of a second waveband;
wherein the first band of wavelengths is different from the second band of wavelengths, and the first color is different from the second color; and the power supply modes of the focal plane device are switched to realize the display of the infrared images with different colors.
2. The focal plane device of claim 1, further comprising a power supply unit comprising a first connection and a second connection;
the first connecting end is electrically connected with the transparent conductive base layer, and the second connecting end is electrically connected with the common connection position of the first light-emitting unit and the second light-emitting unit;
by switching the bias direction of the first connection terminal and the second connection terminal of the power supply unit, the following effects are achieved:
the first infrared detection unit detects infrared light of the first waveband and emits visible light rays of a first color corresponding to the first light emitting unit; or
The second infrared detection unit detects the infrared light of the second waveband and emits visible light rays of a second color corresponding to the second light emitting unit.
3. The focal plane device of claim 2, wherein the power supply unit further comprises a power supply unit and a changeover switch;
the power supply unit comprises a positive electrode and a negative electrode;
the change-over switch comprises a first contact, a second contact, a third contact, a fourth contact, a fifth contact and a sixth contact, the second contact is connected with the negative electrode, the fifth contact is connected with the positive electrode, the third contact and the sixth contact are both connected with the first connecting end, and the first contact and the fourth contact are both connected with the second connecting end;
the fifth contact is connected with the fourth contact through the communication relation switching among the contacts, and meanwhile, the second contact is connected with the third contact;
or the fifth contact is connected with the sixth contact, and the second contact is connected with the first contact.
4. The focal plane device of any of claims 1-3, wherein a first infrared quantum dot layer subsidiary carrier transport layer, a first infrared quantum dot layer, a second infrared quantum dot layer subsidiary carrier transport layer, a second infrared quantum dot layer, a third infrared quantum dot layer subsidiary carrier transport layer, an intermediate electrode layer, a first quantum dot light layer subsidiary carrier transport layer, a second quantum dot light layer subsidiary carrier transport layer, a transparent electrode layer, a third quantum dot light layer subsidiary carrier transport layer, a second quantum dot light layer, a fourth quantum dot light layer subsidiary carrier transport layer, and a top electrode layer are stacked in this order on the transparent conductive base layer;
wherein the intermediate electrode layer and the top electrode layer are in conductive communication at the device side and are electrically insulated from the transparent electrode layer;
the first infrared detection unit comprises a first infrared quantum dot layer subsidiary carrier transmission layer, a first infrared quantum dot layer and a second infrared quantum dot layer subsidiary carrier transmission layer;
the second infrared detection unit comprises a second infrared quantum dot layer subsidiary carrier transmission layer, a second infrared quantum dot layer and a third infrared quantum dot layer subsidiary carrier transmission layer;
the first light-emitting unit comprises an intermediate electrode layer, a first quantum dot light-emitting layer auxiliary carrier transmission layer, a first quantum dot light-emitting layer, a second quantum dot light-emitting layer auxiliary carrier transmission layer and a transparent electrode layer;
the second light-emitting unit comprises a transparent electrode layer, an auxiliary carrier transmission layer of a third quantum dot light-emitting layer, a second quantum dot light-emitting layer, an auxiliary carrier transmission layer of a fourth quantum dot light-emitting layer and a top electrode layer.
5. The focal plane device of claim 4, further comprising an insulating blocking layer;
the insulating blocking layer and the transparent electrode layer are arranged on the same layer, and the insulating blocking layer is used for realizing electric insulation between the transparent electrode layer and the middle electrode layer.
6. The focal plane device of claim 4, wherein the first and third infrared quantum dot layer subsidiary carrier transport layers are hole transport layers and the second and third infrared quantum dot layer subsidiary carrier transport layers are electron transport layers, or wherein the first and third infrared quantum dot layer subsidiary carrier transport layers are electron transport layers and the second infrared quantum dot layer subsidiary carrier transport layer is a hole transport layer;
and/or
The first quantum dot light emitting layer auxiliary carrier transmission layer and the third quantum dot light emitting layer auxiliary carrier transmission layer are electron transmission layers, and the second quantum dot light emitting layer auxiliary carrier transmission layer and the fourth quantum dot light emitting layer auxiliary carrier transmission layer are hole transmission layers; or the first quantum dot light emitting layer auxiliary carrier transmission layer and the third quantum dot light emitting layer auxiliary carrier transmission layer are hole transmission layers, and the second quantum dot light emitting layer auxiliary carrier transmission layer and the fourth quantum dot light emitting layer auxiliary carrier transmission layer are electron transmission layers.
7. The focal plane device of claim 6, wherein the infrared quantum dot layer, the quantum dot light emitting layer, the electron transport layer and the hole transport layer are prepared by a solution method or an evaporation method; the solution process includes spraying or printing;
the electrode layer and the insulation blocking layer are both prepared by adopting an evaporation method.
8. The focal plane device of claim 1, wherein the first wavelength band is an a-band and the second wavelength band is a B-band or a C-band;
or the first waveband is a B waveband, and the second waveband is an A waveband or a C waveband;
or the first waveband is a C waveband, and the second waveband is an A waveband or a B waveband;
wherein the content of the first and second substances,
the wavelength range of the A wave band is 0.7-2.5 μm;
the wavelength range of the B wave band is 3.0-5.0 μm;
the wavelength range of the C wave band is 8.0-12.0 μm.
9. The focal plane device of claim 1, wherein the first color is red and the second color is blue or green;
or, the first color is blue, and the second color is red or green;
alternatively, the first color is green and the second color is red or blue.
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