CN219124692U - Infrared-visible light imaging up-conversion device and color imaging apparatus - Google Patents

Abstract

The present disclosure relates to an infrared-visible imaging up-conversion device and a color imaging apparatus, wherein the device includes an infrared detection layer, a first carrier transport layer, and an organic light emitting layer, the first carrier transport layer being disposed between the infrared detection layer and the organic light emitting layer; the infrared detection layer is used for responding to the photoresistance change of infrared light rays irradiated on the device, and the first carrier transmission layer responds to the photoresistance change of the infrared detection layer to enable corresponding different currents to be transmitted to the organic light-emitting layer; the organic light emitting layer emits visible light of a corresponding wavelength based on a current flowing therethrough, and the organic light emitting layer emits visible light of a different wavelength for different infrared rays. Therefore, the up-conversion from infrared light to visible light can be realized, thereby realizing infrared visible light imaging and greatly simplifying the process of reading information in the infrared detection field; and can realize the display of multiple different colors in single device to realize the color imaging, and then be favorable to promoting the imaging effect.

Description

Infrared-visible light imaging up-conversion device and color imaging apparatus

Technical Field

The present disclosure relates to the field of photoelectric detection technologies, and in particular, to an infrared-visible light imaging up-conversion device and a color imaging apparatus.

Background

Photoelectric detection is a technique of detecting light in combination with an electrical signal. The infrared detection is mainly based on infrared image information obtained by an infrared detector and converted into an electric signal, and the electric signal is processed by integration and the like, and then the electric signal is obtained by a reading circuit, and the electric signal is converted into a visible light image for display. Or, for example, infrared photons are converted into photoelectrons, such as by a tube, and then converted into an image. The most sophisticated infrared imaging techniques to date are conventional infrared focal plane imaging techniques.

The existing infrared up-conversion device capable of directly converting an infrared image into a visible light image is generally used for converting low-energy infrared photons into high-energy visible photons, and then imaging by a mature visible light imaging technology or directly seeing the infrared photons by naked eyes. However, the existing infrared up-conversion device can only display a single-color image, has single color and poor imaging effect.

Disclosure of Invention

To solve or at least partially solve the above technical problems, the present disclosure provides an infrared-visible light imaging up-conversion device and a color imaging apparatus.

The present disclosure provides an infrared-visible imaging up-conversion device comprising: the device comprises an infrared detection layer, a first carrier transmission layer and an organic light-emitting layer, wherein the first carrier transmission layer is arranged between the infrared detection layer and the organic light-emitting layer;

the first carrier transmission layer is used for transmitting different currents to the organic light-emitting layer in response to the photoresistance change of the infrared detection layer; the organic light emitting layer emits visible light of a corresponding wavelength based on the current flowing therethrough, and the organic light emitting layer emits visible light of a different wavelength for different infrared rays.

Optionally, the organic light emitting layer includes a first color light emitting material, a second color light emitting material, a third color light emitting material, and a host material;

the first color luminescent material, the second color luminescent material and the third color luminescent material are mixed according to a preset proportion and doped in the main body material;

the first color, the second color, and the third color are different from one another.

Optionally, the first color, the second color, and the third color are each one of red, green, and blue.

Optionally, the host material is the same as the material of the first carrier transport layer.

Optionally, the device further comprises an anode layer, a second carrier transport layer, and a cathode layer;

the anode layer is positioned on one side of the infrared detection layer, which is away from the first carrier transmission layer, the second carrier transmission layer is positioned on one side of the organic light-emitting layer, which is away from the first carrier transmission layer, and the cathode layer is positioned on one side of the second carrier transmission layer, which is away from the organic light-emitting layer;

the first carrier transport layer and the second carrier transport layer are each one of an electron transport layer and a hole transport layer.

Optionally, in the device,

the anode layer comprises an indium tin oxide layer;

the infrared detection layer comprises a plurality of layers of mercury telluride quantum dot films, and the top layer silver telluride is used for P-type doping:

the electron transport layer comprises 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene;

the organic light-emitting layer comprises tris (2-phenylpyridine) iridium, tris [ 1-phenylisoquinoline-C2, N ] iridium (III) and bis (4, 6-difluorophenylpyridine-N, C2) pyridine formylairidium; or the organic light-emitting layer comprises 8-hydroxyquinoline aluminum, 5,6,11, 12-tetraphenyltetracene and perylene;

the hole transport layer comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine;

the cathode layer includes a lithium fluoride layer and a metal electrode layer, the lithium fluoride layer being located on a side of the metal electrode layer facing the second carrier transport layer.

Optionally, in the device,

the thickness of the anode layer is 50 nm-150 nm;

the thickness of the infrared detection layer is 500 nm-2000 nm:

the thickness of the second carrier transmission layer is 30 nm-60 nm;

the thickness of the organic light-emitting layer is 15 nm-35 nm;

the thickness of the first carrier transmission layer is 20 nm-60 nm;

the thickness of the cathode layer is 25 nm-35 nm.

The present disclosure also provides a color imaging apparatus including any of the above devices; further comprises: an imaging lens disposed between the device and the object to be imaged;

the imaging lens is used for converging infrared rays corresponding to the imaged object to the device.

Optionally, the device is a curved device, and a curved shape of the device is the same as a curved shape of the imaging lens.

Optionally, the apparatus further comprises: the beam expanding device is arranged on one side of the device, which is away from the imaging lens;

the beam expanding device is used for amplifying the visible image formed by the device corresponding to the imaged object according to a preset multiple.

Compared with the prior art, the technical scheme provided by the disclosure has the following advantages:

the infrared-visible light imaging up-conversion device comprises an infrared detection layer, a first carrier transmission layer and an organic light-emitting layer, wherein the first carrier transmission layer is arranged between the infrared detection layer and the organic light-emitting layer; the infrared detection layer is used for responding to the photoresistance change of infrared light rays irradiated on the device, and the first carrier transmission layer responds to the photoresistance change of the infrared detection layer to enable corresponding different currents to be transmitted to the organic light-emitting layer; the organic light emitting layer emits visible light of a corresponding wavelength based on a current flowing therethrough, and the organic light emitting layer emits visible light of a different wavelength for different infrared rays. Therefore, the up-conversion from infrared light to visible light can be realized, thereby realizing infrared visible light imaging and greatly simplifying the process of reading information in the infrared detection field; and through setting up organic luminescent layer, can realize the visible light of multiple different wavelength in this single device, realize the display of multiple different colours promptly to be favorable to realizing based on simple device structure realization colour imaging.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.

In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.

Fig. 1 is a schematic structural diagram of an infrared-visible imaging up-conversion device according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of an organic light emitting layer in an ir-vis imaging up-conversion device according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of another infrared-visible imaging up-conversion device according to an embodiment of the present disclosure;

fig. 4 is a schematic diagram of an operating principle of an infrared-visible imaging up-conversion device according to an embodiment of the present disclosure;

fig. 5 is a schematic structural view of a color image forming apparatus according to an embodiment of the present disclosure;

fig. 6 is a schematic structural view of another color image forming apparatus according to an embodiment of the present disclosure.

Wherein, the 10-infrared-visible light imaging up-conversion device can be simply called as a device; 110. an infrared detection layer; 120. a first carrier transport layer; 130. an organic light emitting layer; 131. a first color luminescent material; 132. a second color luminescent material; 133. a third color luminescent material; 134. a host material; 140. an anode layer; 150. a second carrier transport layer; 160. a cathode layer; 20. color image forming apparatus, which may be simply referred to as "apparatus"; 210. an imaging lens; 220. a driving mechanism; 230. a signal amplifier; 240. a low pass filter; 250. a display.

Detailed Description

In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.

The infrared-visible light imaging up-conversion device and the color imaging device provided by the embodiment of the disclosure can be applied to the fields of remote sensing, night vision, guidance, biomedicine, geological detection, meteorological monitoring and the like, and scenes such as augmented reality, virtual reality, machine vision, automatic driving, wearable intelligent equipment, unmanned aerial vehicle, mobile reconnaissance, intelligent city and the like.

The infrared-visible light imaging up-conversion device provided by the embodiment of the disclosure is substantially an infrared photoelectric sensor, and particularly is an infrared-visible light multicolor up-conversion color imaging device, specifically, the current flowing through the organic light-emitting layer is different by utilizing the change of the photoresistance of the infrared detection layer, so that the organic light-emitting layer emits visible light with corresponding wavelength based on the current flowing through the organic light-emitting layer, and aiming at different infrared light, the organic light-emitting layer correspondingly emits visible light with different wavelength, so that infrared detection can be realized on the same small-volume device at the same time, and detected infrared information can be directly converted into visible light, thereby realizing no-pixel multicolor imaging.

The device provided by the embodiment of the disclosure at least comprises the following advantages:

first, the conventional infrared imaging device has an infrared detector, an infrared imaging readout circuit, and a digital signal processing and displaying part, which causes a complicated structure and increases the manufacturing cost. And the interconnection of the detector and the reading circuit needs to be increased by tens of thousands of indium columns, and the interconnection is completed through a rewinding interconnection process, so that the detector is complex, expensive and unreliable; the output electrical signal not only needs to be read out by a readout circuit, but also an imaging processing circuit is very complex. The preparation technology of infrared materials and the conversion processing of photoelectric signals have become core problems limiting the development of infrared imaging technology.

The device provided by the embodiment of the disclosure omits a structural device for reading out a circuit and processing a digital signal, and greatly simplifies the process of reading information in the infrared detection field; and therefore, the manufacturing flow of the device is greatly simplified, the indium column is not required to be welded, the complexity is reduced, and the cost is reduced; the device volume is reduced by the compact device structure compared to conventional image intensifier tubes.

Second, infrared imaging techniques such as tubes increase in volume because of the movement channels for photoelectron multiplication, and photoelectrons in the tubes are multiplied by external photoelectric effects, which progress in the vacuum tube due to voltage, because of noise during imaging caused by inaccurate movement positions of the photoelectrons due to thermal movement of molecules.

The device provided by the embodiment of the disclosure utilizes the internal photoelectric effect to generate photo-generated carriers in the pixel of the film layer of the device, thereby reducing the noise of photoelectronic movement generated by utilizing the external photoelectric effect, such as a picture tube.

Third, the infrared up-conversion device without a readout circuit in the related art can only display monochromatic images, and is limited by the wavelength detected by the detection material, and the manufacturing process of the LED part manufactured by adopting the solution method is complex, so that the large-scale mass production is not facilitated. In addition, the existing organic light emitting diode (Organic LightEmitting Diode, OLED) devices are all single-color devices, and are also realized by making independent devices of different color OLEDs when multicolor light emission is realized, and no OLED realizing multicolor light emission in one light emitting layer of the device is realized.

While the device provided by the embodiments of the present disclosure achieves multicolor display in one device, multicolor display is achieved with a single device. Illustratively, luminescent materials capable of emitting a plurality of different colors are doped in the same organic luminescent layer, so that the device can emit a plurality of different colors based on the organic luminescent layer, an OLED capable of emitting three different colors is illustratively formed based on the organic luminescent layer, and a colloidal quantum dot infrared detector is formed based on the infrared detection layer; therefore, the colloid quantum dot infrared detector is combined with the three-color OLED to form a multicolor up-conversion imaging device; in particular, imaging of the imaged object can be achieved, whereby a complete color image of the imaged object is achieved based on the device.

In addition, the OLED part is manufactured by high-temperature evaporation, the manufacturing process is simple and convenient, a plurality of devices can be manufactured at one time, and the LED has more advantages in mass production and the like compared with LEDs manufactured by a full-solution method.

An infrared-visible light imaging up-conversion device and a color imaging apparatus provided by embodiments of the present disclosure are exemplarily described below with reference to the accompanying drawings.

Exemplary, fig. 1 is a schematic structural diagram of an infrared-visible imaging up-conversion device according to an embodiment of the disclosure. Referring to fig. 1, the device 10 includes: the organic light emitting device comprises an infrared detection layer 110, a first carrier transmission layer 120 and an organic light emitting layer 130, wherein the first carrier transmission layer 120 is arranged between the infrared detection layer 110 and the organic light emitting layer 130; wherein the infrared detection layer 110 is configured to generate a photoresist change in response to an infrared light ray irradiated onto the device 10, and the first carrier transmission layer 120 transmits a corresponding different current to the organic light emitting layer 130 in response to the photoresist change of the infrared detection layer 110; the organic light emitting layer 130 emits visible light of a corresponding wavelength based on a current flowing therethrough, and the organic light emitting layer 130 emits visible light of a different wavelength for different infrared rays.

The infrared detection layer 110 and the organic light emitting layer 130 are connected in series based on the first carrier transport layer 120, and the infrared detection layer 110 corresponds to a photoresist layer, i.e., a photoresistor layer. When no light irradiates the device, the resistance corresponding to the infrared detection layer 110 is larger, the current in the device 10 is lower than the starting current of the organic light-emitting layer 130, and the organic light-emitting layer 130 does not emit light; when light irradiates the infrared detection layer 110, the resistance corresponding to the infrared detection layer 110 changes, which is equivalent to generating photo-generated carriers, so that the current flowing in the organic light-emitting layer 130 increases, and when the current reaches the opening current, the organic light-emitting layer 130 starts to emit light; and as the current increases, the luminous intensity also increases; and because the starting currents (or starting voltages) of the luminescent materials with different colors are different, when the light incident to the device 10 changes, the wavelength of the visible light changes, that is, the luminescent color of the device 10 also changes, so that various different color displays, that is, color displays, are realized.

The infrared-visible imaging up-conversion device 10 provided in the embodiments of the present disclosure solves the problem of monochromatic image display of the conventional infrared up-conversion device. Specifically, in the device 10, the organic light emitting layer 130 may perform multicolor display on infrared images corresponding to different wavelengths. In particular, multicolor image display is realized with this single device, which will be described in detail later.

Illustratively, the infrared detection layer 110 may employ HgTe quantum dot materials.

Further, detection of various different infrared wavebands can be realized by adjusting the synthesis mode of the HgTe quantum dots; illustratively, the infrared bands may include three distinct infrared bands of 1.5um to 2.5um,3um to 5um,8um to 12 um. It should be noted that one device 10 can perform detection in any one of the three infrared bands, and a plurality of unused devices 10 can cover the three infrared bands.

It can be appreciated that HgTe quantum dots are quantum dots that are sensitive to 8um to 12um long wave infrared, whereby the device 10 can enable detection of long wave infrared and a visible multicolor imaging display in combination with an organic light emitting layer.

In some embodiments, fig. 2 is a schematic structural diagram of an organic light emitting layer in an infrared-visible imaging up-conversion device according to an embodiment of the disclosure. Referring to fig. 2, in the device, the organic light emitting layer 130 includes a first color light emitting material 131, a second color light emitting material 132, a third color light emitting material 133, and a host material 134; the first color luminescent material 131, the second color luminescent material 132, and the third color luminescent material 133 are mixed in a predetermined ratio and doped in the host material 134; the first color, the second color, and the third color are different from one another.

Wherein the first color luminescent material 131 is used for emitting light of a first color, the second color luminescent material 132 is used for emitting light of a second color, and the third color luminescent material 133 is used for emitting light of a third color; through setting up first colour, second colour and third colour different, can realize the adjustable light-emitting of multiple different colours. Illustratively, three-color emitting OLEDs can be implemented in a single device 10, thereby enabling color multicolor imaging.

Among them, the film forming property of the light emitting material itself is generally poor, while the film forming property of the host material 134 is good. Thus, by doping a plurality of different color light emitting materials in the body 134, in addition to achieving different color display using the organic light emitting layer 130, the film formation quality of the organic light emitting layer 130 can be improved, thereby improving the light emitting performance of the organic light emitting layer 130 and improving the overall imaging performance of the device 10 including the organic light emitting layer 130.

It should be noted that the doping ratio of the three color light emitting materials, that is, the preset ratio, may be set based on the display requirement of the device, which is not limited herein.

In some embodiments, the first color, the second color, and the third color are each one of red, green, and blue.

Wherein, the red, green and blue are three primary colors which are widely used at present, the organic light-emitting layer 130 is formed based on the three primary colors, and the manufacturing materials and the manufacturing process are mature and simple, so the manufacturing difficulty is low and the cost is low; meanwhile, the performance stability is good, and the method is convenient for large-scale manufacture and application.

In the embodiment of the disclosure, in the organic light emitting layer 130 of the device 10, by mixing and doping the light emitting materials of three colors of red, green and blue in the host material 134 according to a preset ratio, multicolor adjustable light emission can be realized.

In some embodiments, the host material 134 is the same material as the first carrier transport layer 120.

In the embodiment of the disclosure, the host material 134 in the organic light emitting layer 130 is provided with the same material as that of the first carrier transport layer 120, so that on one hand, the material types in the device 10 are reduced, and on the other hand, the film performance of the organic light emitting layer 130 is ensured to be better due to the better film forming performance of the first carrier transport layer 120.

In some embodiments, fig. 3 is a schematic structural diagram of another infrared-visible imaging up-conversion device according to an embodiment of the disclosure. Referring to fig. 3 on the basis of fig. 1, the device 10 further comprises an anode layer 140, a second carrier transport layer 150, and a cathode layer 160; the anode layer 140 is located at a side of the infrared detection layer 110 away from the first carrier transport layer 120, the second carrier transport layer 150 is located at a side of the organic light emitting layer 130 away from the first carrier transport layer 120, and the cathode layer 160 is located at a side of the second carrier transport layer 150 away from the organic light emitting layer 130; the first carrier transport layer 120 and the second carrier transport layer 150 are each one of an electron transport layer and a hole transport layer.

The film structure of the device 10 includes an anode layer 140, an infrared detection layer 110, a first carrier transport layer 120, an organic light emitting layer 130, a second carrier transport layer 150, and a cathode layer 160.

Illustratively, a substrate may also be included under the anode layer 140, with the anode layer 140 and substrate together constituting a conductive base layer.

Illustratively, based on the difference in the carrier transport layers, the structure may specifically be: the infrared detection layer, the electron transport layer, the organic light-emitting layer, the hole transport layer and the cathode layer are sequentially arranged above the conductive substrate layer from bottom to top; or may be: the infrared detection device comprises a conductive substrate layer, an infrared detection layer, a hole transport layer, an organic light emitting layer, an electron transport layer and a cathode layer which are sequentially arranged above the conductive substrate layer from bottom to top.

Fig. 4 is a schematic diagram illustrating an operating principle of an infrared-visible imaging up-conversion device according to an embodiment of the present disclosure. Referring to fig. 4, in the device 10, the infrared detection layer 110 functions as an infrared photo resistor. When the device 10 works, a constant voltage of 2V-20V is applied; when no light irradiation in the infrared band is received, the current in the device 10 is lower than the on current of the OLED, and the organic light emitting layer 130 does not emit light; when infrared detection layer 110 receives an infrared light of a corresponding wavelength band, the resistance of infrared detection layer 110 changes, and the current flowing in organic light emitting layer 130 connected in series therewith increases. When the infrared light received by the infrared detection layer 110 has stronger light intensity, the resistance thereof is lower, and the current flowing in the organic light emitting layer 130 is larger; the larger the current is, the larger the corresponding visible light luminous intensity is, and the different starting voltages of the three color luminous materials can change the visible light luminous color (such as red, green and blue) when the light intensity of the incident infrared light changes, so as to realize multicolor display.

In the embodiment of the disclosure, when an optical system (such as an imaging lens later) images an infrared image on the infrared detection layer 110 in the device 10, according to the difference of the light intensities of the incident infrared light, the infrared detection layer 110 on the imaging surface changes corresponding to different resistances, so that the organic light-emitting layer 130 connected in series emits visible light with different colors and intensities, specifically, as the infrared light at different positions of the imaged object may be different, the light intensities of the infrared light irradiated to different positions of the infrared detection layer 110 are corresponding to different, so that the light resistances at different positions of the infrared detection layer 110 are different, the currents transmitted to different positions of the organic light-emitting layer 130 through the first carrier transmission layer 120 are corresponding to different magnitudes of currents transmitted to different positions of the organic light-emitting layer 130, so that the colors and intensities of the visible light emitted at different positions of the organic light-emitting layer 130 are different, and a complete visible light image corresponding to the imaged object is correspondingly formed. Therefore, the visible light image display of the infrared image can be realized, and the color display of the infrared image can be further realized.

The device 10 provided in the embodiment of the present disclosure adopts top electrode emission, and is applicable to more scenes, and the circuit at the bottom of the device can be made more complex, so as to flexibly meet the requirements of different application scenes. Specifically, in active display, the OLED light emitting device is usually controlled by a thin film transistor (Thin Film Transistor, TFT), and for this purpose, if the device emits light in a bottom emission form, the emitted light will be blocked by the TFT and metal lines on the substrate when passing through the bottom substrate, which affects the actual light emitting area. In the embodiment of the disclosure, the emergent light is emitted from the top of the device, and under the structure, the circuit design in the substrate does not influence the light emitting area of the device, so that the working voltage of the OLED is lower under the same brightness, and longer service life can be realized. Illustratively, the structure is applicable to small-sized probe imaging devices, such as cell phones.

In some embodiments, the device 10, the anode layer 140 comprises an indium tin oxide layer; the infrared detection layer 110 includes a multilayer mercury telluride (HgTe) quantum dot film, and utilizes a top layer of silver telluride (Ag ₂ Te) P-type doping: the electron transport layer comprises 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi); the organic light emitting layer 130 includes tris (2-phenylpyridine) iridium, tris [ 1-phenylisoquinoline-C2, N]Iridium (III) and bis (4, 6-difluorophenylpyridine-N, C2) picolinated iridium; or 8-hydroxyquinoline aluminum, 5,6,11, 12-tetraphenyltetracene, and perylene are included in the organic light emitting layer 130; the hole transport layer includes N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB); cathode layer 160 includes a lithium fluoride Layer (LiF) and a metal electrode layer, fluorideThe lithium layer is located on a side of the metal electrode layer facing the second carrier transport layer 150.

In the embodiment of the disclosure, the infrared detection layer 110 adopts HgTe colloid quantum dots to realize up-conversion multicolor display by combining an HgTe infrared detector and an OLED, and specifically, can realize display imaging with adjustable three-color luminescent color and intensity in the same period 10.

Illustratively, the infrared detection layer 110 is a multilayer quantum dot film, the quantum dot film is subjected to liquid ligand exchange treatment, the surface ligand is an SH-short chain ligand, and the quantum dot film is an HgTe quantum dot (HgTe CQD) film.

Illustratively, in the organic light-emitting layer 130, the green light-emitting material is tris (2-phenylpyridine) iridium (Ir (ppy) ₃ ) The red luminescent material is tris [ 1-phenylisoquinoline-C2, N]Iridium (III) (Ir (piq) ₃ ) The blue luminescent material is bis (4, 6-difluorophenylpyridine-N, C2) pyridine formylairidium (FIrpic); alternatively, the green luminescent material is 8-hydroxyquinoline aluminum (Alq ₃ ) The red luminescent material is 5,6,11, 12-tetraphenyltetracene (Rubrene), and the blue luminescent material is Perylene (Perylene).

Illustratively, the material of the metal electrode layer may be gold (Au), silver (Ag), or aluminum (Al).

In other embodiments, the film layer material may be other materials known to those skilled in the art, and the disclosure is not limited thereto.

In some embodiments, the thickness of the anode layer 140 in the device 10 is 50nm to 150nm; the thickness of the infrared detection layer 110 is 500nm to 2000nm: the thickness of the second carrier transport layer 150 is 30nm to 60nm; the thickness of the organic light emitting layer 130 is 15nm to 35nm; the thickness of the first carrier transport layer 120 is 20nm to 60nm; the thickness of the cathode layer 160 is 25nm to 35nm.

In the embodiment of the disclosure, the thickness range of each film layer is set to meet the photoelectric performance requirement of the device 10.

Illustratively, the conductive substrate layer of the up-conversion imaging device based on the OLED and colloidal quantum dot infrared detector may be ITO conductive glass; on this basis, the step of forming the other film layers may include:

firstly, cleaning ITO conductive glass, and then putting the cleaned ITO conductive glass into a plasma cleaner for 15 minutes;

then, statically spin-coating 5-20 layers of HgTe quantum dots on the ITO conductive glass after plasma treatment, wherein the total thickness is about 500-2000 nm; in the step, static spin coating refers to dripping a preset solution when ITO conductive glass is static, and then rotating to form HgTe films of all layers;

thereafter spin-coating a layer of Ag ₂ Te is used as P-type doping;

thereafter, the sample is transferred into a flask filled with N ₂ In a glove box;

then, evaporating 45nm of NPB,20nm of luminescent material mixture and 40nm of TPBi on a substrate coated with HgTe quantum dots in a vacuum coating machine of a glove box, wherein the evaporation speed is 0.6 angstrom per second; the luminescent material mixture may be Ir (ppy) ₃ 、Ir(piq) ₃ And FIrpic, or Alq ₃ Mixtures of Rubrene and Perylene;

then, taking out the sample from the film plating machine, adhering the sample to a mask plate designed in advance, and putting the mask plate into the film plating machine again; the mask plate is used for fixing a sample, and the area of a motor formed based on the mask plate is smaller than that of ITO conductive glass;

finally, 1nm LiF and 30nm Al or Ag electrodes were sequentially evaporated on the sample at 0.1 angstrom per second and 0.6 angstrom per second, respectively.

In the embodiment of the disclosure, an up-conversion imaging device based on an organic light-emitting layer and a colloid quantum dot infrared detection layer adopts a solution and evaporation process to sequentially stack films on a conductive substrate layer along a vertical direction, and constructs light-electricity-light conversion in a vertical coupling mode, wherein the device structure is embodied by serial connection of a quantum dot infrared detector and an OLED (organic light-emitting diode) so as to realize the function of infrared up-conversion.

Wherein the thickness of the cathode layer is thinner, so that the cathode layer is formed as a transparent electrode layer, realizing top electrode luminescence, making the device applicable to devices requiring more complex bottom electrode circuits.

The flexible substrate can be adopted, and the flexible detector can be correspondingly manufactured and formed by the identical process, so that the flexible detector can be applied to wearable equipment.

The OLED part is manufactured by high-temperature evaporation, the manufacturing process is simple and convenient, a plurality of devices can be manufactured at one time, and the OLED part has more advantages in mass production and other aspects compared with LEDs manufactured by a full-solution method.

In other embodiments, the functional film layers in the device may be formed in other manners known to those skilled in the art, which are not described herein again.

On the basis of the foregoing embodiments, the embodiments of the present disclosure further provide a color imaging device, which may include any of the devices provided in the foregoing embodiments, and have corresponding beneficial effects, and the same features may be understood with reference to the foregoing, and are not repeated herein.

Illustratively, fig. 5 is a schematic structural diagram of a color imaging device according to an embodiment of the present disclosure. Referring to fig. 5, the apparatus 20 includes a device 10, further including: an imaging lens 210; the imaging lens 210 is disposed between the device 10 and the object to be imaged, and the imaging lens 210 is configured to collect infrared light corresponding to the object to be imaged onto the device 10.

The imaging lens 210 converges the infrared light corresponding to the complete image of the imaged object on the device 10 at a time, that is, projects the complete infrared light of the imaged object to the device 10.

Illustratively, referring to fig. 5, the plane defined by the first direction X and the second direction Y is parallel to the imaging plane of the imaging lens 210, with the device 10 disposed at the imaging plane location of the imaging lens 210; the third direction Z is the optical axis direction of the imaging lens 210, and is perpendicular to a plane defined by the first direction X and the second direction Y.

Illustratively, in combination with the above, the imaging lens 210 is capable of imaging an infrared image on the infrared detection layer 110 in the device 10, and the infrared detection layer 110 on the imaging surface thereof changes corresponding to different resistances according to the light intensity of the incident infrared light, so that the organic light emitting layers 130 connected in series thereof emit visible light with different colors and intensities. Specifically, since the infrared light rays at different positions of the imaged object may be different, the light intensities of the infrared light rays irradiated to different positions of the infrared detection layer 110 are different, the photoresists at different positions of the infrared detection layer 110 are different, the currents transmitted to different positions of the organic light emitting layer 130 via the first carrier transmission layer 120 are different, and the colors and intensities of the visible light emitted from different positions of the organic light emitting layer 130 are different, so that a complete visible light image corresponding to the imaged object is formed correspondingly. Therefore, the visible light image display of the infrared image can be realized, and the color display of the infrared image can be further realized.

In some embodiments, device 10 is a curved device, the curved shape of device 10 being the same as the curved shape of imaging lens 210.

Illustratively, as can be seen based on fig. 5, the imaged object is imaged at the image-side focal plane by an imaging lens 210. For example, the imaging lens 210 may employ an optical system, due to the inherent properties of the optical lens and the light wave in the conventional optical system, the optical imaging may have aberration, chromatic dispersion and curvature of field, and the solution in the related art is generally to use an expensive lens capable of eliminating aberration or to use a digital signal processing manner to eliminate aberration.

In some embodiments, fig. 6 is a schematic structural diagram of another color imaging device according to an embodiment of the disclosure. On the basis of fig. 5, referring to fig. 6, the apparatus 20 further includes: a beam expanding device 220; the beam expanding device 220 is disposed on a side of the device 10 (i.e., any of the upconversion imaging devices described above) facing away from the imaging lens 210; the beam expander 220 is used to expand the visible image of the device 10 corresponding to the imaged object by a predetermined factor.

The preset multiple may be set based on the size of the device 10 and the image observation requirement, and the preset multiple may be 3,5, 8 or any other value, which is not limited herein.

In the presently disclosed embodiment, the visible image imaged by device 10 may be magnified by providing a beam expanding device 220 to enable viewing.

It should be noted that the structure of the beam expander 220 may be any structure known to those skilled in the art, and is not limited herein.

In other embodiments, the device may also include other structural components known to those skilled in the art, and are not described in detail herein.

It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. An infrared-to-visible imaging upconverter device comprising: the device comprises an infrared detection layer, a first carrier transmission layer and an organic light-emitting layer, wherein the first carrier transmission layer is arranged between the infrared detection layer and the organic light-emitting layer;

the first carrier transmission layer is used for transmitting different currents to the organic light-emitting layer in response to the photoresistance change of the infrared detection layer; the organic light emitting layer emits visible light of a corresponding wavelength based on the current flowing therethrough, and the organic light emitting layer emits visible light of a different wavelength for different infrared rays.

2. The device of claim 1, further comprising an anode layer, a second carrier transport layer, and a cathode layer;

the anode layer is positioned on one side of the infrared detection layer, which is away from the first carrier transmission layer, the second carrier transmission layer is positioned on one side of the organic light-emitting layer, which is away from the first carrier transmission layer, and the cathode layer is positioned on one side of the second carrier transmission layer, which is away from the organic light-emitting layer;

the first carrier transport layer and the second carrier transport layer are each one of an electron transport layer and a hole transport layer.

3. The device of claim 2, wherein the device comprises a semiconductor die,

the anode layer comprises an indium tin oxide layer;

the infrared detection layer comprises a plurality of layers of mercury telluride quantum dot films, and the top layer silver telluride is used for P-type doping:

the cathode layer includes a lithium fluoride layer and a metal electrode layer, the lithium fluoride layer being located on a side of the metal electrode layer facing the second carrier transport layer.

4. The device of claim 2, wherein the device comprises a semiconductor die,

the thickness of the anode layer is 50 nm-150 nm;

the thickness of the infrared detection layer is 500 nm-2000 nm:

the thickness of the second carrier transmission layer is 30 nm-60 nm;

the thickness of the organic light-emitting layer is 15 nm-35 nm;

the thickness of the first carrier transmission layer is 20 nm-60 nm;

the thickness of the cathode layer is 25 nm-35 nm.

5. A color image forming apparatus comprising the device of any one of claims 1 to 4; further comprises:

an imaging lens disposed between the device and the object to be imaged;

the imaging lens is used for converging infrared rays corresponding to the imaged object to the device.

6. The apparatus of claim 5, wherein the device is a curved device having a curved shape that is the same as the curved shape of the imaging lens.

7. The apparatus according to claim 5 or 6, further comprising:

the beam expanding device is arranged on one side of the device, which is away from the imaging lens;

the beam expanding device is used for amplifying the visible image formed by the device corresponding to the imaged object according to a preset multiple.

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