CN216563136U - Infrared-multicolor upper conversion imaging focal plane device - Google Patents
Infrared-multicolor upper conversion imaging focal plane device Download PDFInfo
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- CN216563136U CN216563136U CN202122589009.9U CN202122589009U CN216563136U CN 216563136 U CN216563136 U CN 216563136U CN 202122589009 U CN202122589009 U CN 202122589009U CN 216563136 U CN216563136 U CN 216563136U
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Abstract
The present disclosure relates to an infrared-visible light multicolor up-conversion imaging focal plane device, comprising: the quantum dot infrared photoelectric detector and the quantum dot light-emitting diode; the quantum dot infrared photoelectric detector and the quantum dot light-emitting diode are connected in series through the middle conducting layer; the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting at least two visible lights with different colors. Based on the method, when the quantum dot infrared light detector receives infrared light of different wave bands, the internal resistance of the quantum dot infrared light detector is reduced, the current of the quantum dot light-emitting diode connected with the quantum dot infrared light detector in series is increased, and when the current is larger than the starting current of the quantum dot light-emitting diode, the quantum dot light-emitting diode emits visible light of corresponding color; at least two visible lights with different colors are correspondingly emitted when infrared lights with different wave bands are detected, so that the device can display infrared images in a color mode.
Description
Technical Field
The disclosure relates to the technical field of photoelectric sensors, in particular to an infrared-visible light multicolor up-conversion imaging focal plane device.
Background
The infrared detection and imaging technology has wide application in the fields of remote sensing, night vision, guidance, biomedicine, geological detection, meteorological monitoring and the like, and especially the rapid development of recent augmented reality, virtual reality, machine vision, automatic driving, wearable intelligent equipment and the like puts forward higher requirements on the infrared detection and imaging technology.
The working principle of the conventional infrared imaging device is generally as follows: the infrared detector is used for obtaining infrared image information and converting the infrared image information into an electric signal, the electric signal is subjected to integration and other processing, a reading circuit is used for obtaining a digital signal, the digital circuit signal is converted into a visible light image for display, and infrared photons are converted into photoelectrons if an image tube and the like, and then the photoelectrons are converted into an image. However, the conventional infrared imaging device generally has a problem that only monochrome image display can be performed.
SUMMERY OF THE UTILITY MODEL
To solve the above technical problem or at least partially solve the above technical problem, the present disclosure provides an infrared-visible light multicolor upconversion imaging focal plane device capable of detecting a plurality of different infrared wavelength bands and performing color display on an infrared image.
The utility model provides an infrared-multicolor up-conversion imaging focal plane device, which comprises a quantum dot infrared photoelectric detector and a quantum dot light-emitting diode;
the quantum dot infrared photoelectric detector is connected with the quantum dot light-emitting diode in series through the middle conducting layer;
the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting visible light of at least two different colors.
In some embodiments, the quantum dot light emitting diode comprises a conductive substrate layer, and an electron transport layer, a quantum dot light emitting layer, a hole transport layer and a hole injection layer which are arranged in a stacked manner on the conductive substrate layer on the side facing the quantum dot infrared photoelectric detector;
the middle conducting layer is positioned on one side of the hole injection layer, which faces away from the conducting substrate layer;
the quantum dot infrared photoelectric detector is arranged on one side, deviating from the quantum dot light-emitting diode, of the middle conducting layer, and comprises a pixelated infrared quantum dot layer and an electrode layer which are stacked and arranged in the direction away from the middle conducting layer.
In some embodiments, the conductive substrate layer comprises ITO conductive glass, FTO conductive glass, or a flexible conductive substrate layer;
the electron transport layer comprises ZnO nanoparticles, ZnMgO nanoparticles and SnO2Nanoparticles, TiO2At least one of nanoparticles and the like;
the quantum dot light-emitting layer comprises at least one of a CdSe/ZnS quantum dot film, a CdSe/CdS/ZnS quantum dot film, a perovskite quantum dot film and an InP quantum dot film;
the hole transport layer comprises 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP) and/or PEDOT PSS;
the hole injection layer is made of MoO3；
The material of the middle conducting layer comprises at least one of Au, Ag and Al, and the middle conducting layer forms a pixilated metal electrode layer;
the infrared quantum dot layer comprises a plurality of layers of quantum dot films, the quantum dot films are subjected to liquid ligand exchange treatment, surface ligands are SH-short chain ligands, and the quantum dot films are at least one of HgTe quantum dot films, HgSe quantum dot films, PbS quantum dot films and PbSe quantum dot films;
the material of the electrode layer comprises at least one of Au, Ag and Al.
In some embodiments, the electron transport layer has a thickness of 20nm to 40 nm;
the thickness of the quantum dot light-emitting layer is 15 nm-25 nm;
the thickness of the hole transport layer is 200 nm-400 nm;
the thickness of the hole injection layer is 50 nm-200 nm;
the thickness of the middle conducting layer is 300 nm-500 nm;
the thickness of the infrared quantum dot layer is 200nm-1 μm;
the thickness of the electrode layer is 100 nm-400 nm.
In some embodiments, the infrared quantum dot layer and the quantum dot light-emitting layer are arranged in a corresponding array pixel structure;
the infrared quantum dot layer arranged in the array pixel structure is used for responding to infrared light of different wave bands, so that pixels of the quantum light emitting layer emit visible light of different colors.
In some embodiments, the infrared quantum dot layer of the array pixel structure comprises a first detection pixel, a second detection pixel, and a third detection pixel;
the first detection pixel is used for detecting infrared light of a first waveband, the second detection pixel is used for detecting infrared light of a second waveband, and the third detection pixel is used for detecting infrared light of a third waveband;
the wavelength range of the first wave band is 0.7-2.5 mu m;
the wavelength range of the second wave band is 3.0-5.0 μm;
the wavelength range of the third wave band is 8.0-12.0 μm.
In some embodiments, the quantum dot light-emitting layer of the array pixel structure includes corresponding first, second, and third light-emitting pixels;
the first light-emitting pixel corresponds to the first detection pixel and is used for emitting visible light of a first color;
the second light-emitting pixel corresponds to the second detection pixel and is used for emitting visible light of a second color;
the third light-emitting pixel corresponds to the third detection pixel and is used for emitting visible light of a third color;
the first color, the second color, and the third color are different from each other to realize color display.
In some embodiments, the intermediate conductive layers are correspondingly arranged in an array pixel structure to realize respective conductive connection of the corresponding pixels.
In some embodiments, the electron transport layer, the hole injection layer, and the electrode layer are all of a unitary structure, shared by different array pixel structures.
In some embodiments, the quantum dot light-emitting layer and the infrared quantum dot layer are both pixelized functional film layers formed by mask spraying, printing, mask evaporation or photolithographic deposition.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the infrared-multicolor up-conversion imaging focal plane device comprises a quantum dot infrared photoelectric detector and a quantum dot light-emitting diode; the quantum dot infrared photoelectric detector and the quantum dot light-emitting diode are connected in series through the middle conducting layer; the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting at least two visible lights with different colors. Based on the method, when the quantum dot infrared light detector receives infrared light of different wave bands, the internal resistance of the quantum dot infrared light detector is reduced, the current of the quantum dot light-emitting diode connected with the quantum dot infrared light detector in series is increased, and when the current is larger than the starting current of the quantum dot light-emitting diode, the quantum dot light-emitting diode emits visible light of corresponding color; the stronger the light intensity of infrared light received by the quantum dot infrared light detector is, the smaller the resistance of the infrared light is, the larger the current of the corresponding quantum dot light-emitting diode is, and the stronger the visible light emitted by the quantum dot light-emitting diode is; therefore, when the quantum dot infrared light detector receives infrared light with different wave bands and intensities, the resistance of the quantum dot infrared light detector changes correspondingly, and then the quantum dot light emitting diode emits visible light with corresponding colors and intensities, so that true color image display of infrared images with different wave bands is realized. Compared with the traditional infrared imaging device, the focal plane device omits a reading circuit and a structural device for digital signal processing, does not need to be welded with an indium column, has simple and compact structure, simplifies the manufacturing process of the device, reduces the complexity of the process and reduces the manufacturing cost. Meanwhile, the focal plane device generates a photon-generated carrier in the quantum dot light-emitting diode by utilizing the internal photoelectric effect, so that the noise of photoelectron motion generated by the external photoelectric effect such as an image tube is reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of an infrared-multicolor up-conversion imaging focal plane device provided by an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure;
fig. 3 is a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure;
fig. 4 is a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure.
Fig. 5 is a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure;
FIG. 6 is a schematic diagram of the focal plane device of FIG. 4 with an optical lens system to convert infrared light of different wavelength bands into visible light of different colors;
fig. 7 is a schematic flow chart of a method for manufacturing an infrared-multicolor up-conversion imaging focal plane device according to an embodiment of the present disclosure;
fig. 8 is a schematic flow chart of another method for manufacturing an infrared-multicolor up-conversion imaging focal plane device according to an embodiment of the present disclosure;
fig. 9 is a schematic flow chart of yet another method for manufacturing an infrared-multicolor up-conversion imaging focal plane device according to an embodiment of the present disclosure;
fig. 10 is a schematic flow chart of a method for manufacturing an infrared-multicolor up-conversion imaging focal plane device according to an embodiment of the present disclosure.
Wherein, 1, infrared-multicolor upper conversion imaging focal plane device; 2. a power source; 3. an object focal plane; 4. an optical system; 5. a housing; 6. an image; 11. a quantum dot infrared photodetector; 12. A quantum dot light emitting diode; 13. an intermediate conductive layer; 111. an infrared quantum dot layer; 112. an electrode layer; 121. a conductive base layer; 122. an electron transport layer; 123. a quantum dot light emitting layer; 124. A hole transport layer; 125. a hole injection layer; 1111. a first detection pixel; 1112. a second detection pixel; 1113. a third detection pixel; 1231. a first light-emitting pixel element; 1232. a second light-emitting pixel; 1233. and a third light-emitting pixel element.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
In combination with the background art, the conventional infrared imaging device includes an infrared imaging readout circuit and a digital signal processing and displaying structure, which results in a bulky device structure and increases the manufacturing cost of the device. In addition, infrared imaging techniques such as tubes further increase the device volume by providing a motion channel for photoelectron multiplication, and introduce a certain amount of noise due to the photoelectron motion by the external photoelectric effect. However, the infrared up-conversion device in the prior art which does not need a reading circuit can only display a monochrome image, and the detected wavelength range is limited by materials.
Aiming at least one of the defects, the infrared-multicolor up-conversion imaging focal plane device and the preparation method thereof provided by the embodiment of the disclosure are improved, wherein the focal plane device comprises a quantum dot infrared photoelectric detector and a quantum dot light-emitting diode; the quantum dot infrared photoelectric detector and the quantum dot light-emitting diode are connected in series through the middle conducting layer; the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting at least two visible lights with different colors. Based on the method, when the quantum dot infrared light detector receives infrared light of different wave bands, the internal resistance of the quantum dot infrared light detector is reduced, the current of the quantum dot light-emitting diode connected with the quantum dot infrared light detector in series is increased, and when the current is larger than the starting current of the quantum dot light-emitting diode, the quantum dot light-emitting diode emits visible light of corresponding color; the stronger the light intensity of infrared light received by the quantum dot infrared light detector is, the smaller the resistance of the infrared light is, the larger the current of the corresponding quantum dot light-emitting diode is, and the stronger the visible light emitted by the quantum dot light-emitting diode is; therefore, when the quantum dot infrared light detector receives infrared light with different wave bands and intensities, the resistance of the quantum dot infrared light detector changes correspondingly, and then the quantum dot light emitting diode emits visible light with corresponding colors and intensities, so that true color image display of infrared images with different wave bands is realized. Compared with the traditional infrared imaging device, the focal plane device omits a reading circuit and a structural device for digital signal processing, does not need to be welded with an indium column, has simple and compact structure, simplifies the manufacturing process of the device, reduces the complexity of the process and reduces the manufacturing cost. Meanwhile, the focal plane device generates a photon-generated carrier in the quantum dot light-emitting diode by utilizing the internal photoelectric effect, so that the noise of photoelectron motion generated by the external photoelectric effect such as an image tube is reduced.
The infrared-multicolor up-conversion imaging focal plane device and the manufacturing method thereof provided by the embodiment of the disclosure are exemplarily described below with reference to fig. 1 to fig. 10.
In some embodiments, as shown in fig. 1, a schematic structural diagram of an infrared-multicolor up-conversion imaging focal plane device provided for the embodiments of the present disclosure is shown. Referring to fig. 1, the focal plane device includes a Quantum Dot Infrared Photodetector (QDIP) 11 and a Quantum Dot Light Emitting diode (QLED) 12; the quantum dot infrared photoelectric detector 11 is connected with the quantum dot light-emitting diode 12 in series through an intermediate conducting layer 13; the quantum dot infrared light detector 11 is used for detecting infrared light of different wave bands; correspondingly, the qd-led 12 is configured to emit at least two different colors of visible light.
The quantum dot infrared photodetector 11 can receive infrared light of different wave bands, and the resistance value changes, and the stronger the intensity of the received infrared light is, the smaller the resistance is.
The quantum dot light-emitting diode 12 is an electroluminescent device based on quantum dots, and is connected in series with the quantum dot infrared photoelectric detector 11 through the intermediate conducting layer 13; the color of the visible light emitted by the quantum dot light emitting diode 12 depends on the material thereof; the intensity of the visible light is positively correlated with the current, that is, with the intensity of the infrared light received by the quantum dot infrared photodetector 11.
The quantum dot infrared photoelectric detector 11 corresponds to the quantum dot light-emitting diode 12 in the vertical direction, and the projection areas on the horizontal plane are equal.
The working principle of the focal plane device is as follows: when the quantum dot infrared photoelectric detector 11 receives infrared light of different wave bands, its internal resistance reduces to the electric current increase of the quantum dot light emitting diode 12 rather than series connection, when electric current is greater than the opening electric current of quantum dot light emitting diode 12, the quantum dot light emitting diode 12 sends the visible light of corresponding colour. The stronger the infrared light intensity received by the quantum dot infrared light detector 11 is, the smaller the resistance thereof is, the larger the current of the corresponding quantum dot light emitting diode 12 is, and the stronger the visible light emitted therefrom is. Therefore, when the quantum dot infrared light detector 11 receives infrared light with different wave bands and intensities, the resistance thereof changes correspondingly, and then the quantum dot light emitting diode 12 emits visible light with corresponding colors and intensities, thereby realizing true color image display of infrared images with different wave bands.
In the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure, the quantum dot infrared photoelectric detector 11 and the quantum dot light-emitting diode are connected in series through the middle conductive layer 13, when the quantum dot infrared photoelectric detector 11 receives infrared light with different wave bands and intensities, the resistance of the quantum dot infrared photoelectric detector changes correspondingly, and then the quantum dot light-emitting diode 12 emits visible light with corresponding colors and intensities, so that true color image display of infrared images with different wave bands is realized. Compared with the traditional infrared imaging device, the focal plane device omits a reading circuit and a structural device for digital signal processing, does not need to be welded with an indium column, has simple and compact structure, simplifies the manufacturing process of the device, reduces the complexity of the process and reduces the manufacturing cost. Meanwhile, the focal plane device generates a photon-generated carrier in the quantum dot light-emitting diode by utilizing the internal photoelectric effect, so that the noise of photoelectron motion generated by the external photoelectric effect such as an image tube is reduced.
It can be understood that fig. 1 only exemplarily shows the structure in which the quantum dot infrared photodetector 11 is disposed above the quantum dot light emitting diode 12, but does not constitute a limitation on the focal plane device structure provided by the embodiment of the present disclosure; in other embodiments, the quantum dot infrared photodetector 11 may be disposed below the quantum dot light emitting diode 12, which is not limited herein.
In some embodiments, as shown in fig. 2 or fig. 3, a schematic structural diagram of another ir-multicolor up-conversion imaging focal plane device provided by the embodiments of the present disclosure is shown. Referring to fig. 2 or 3, the quantum dot light emitting diode 12 includes a conductive base layer 121, and an electron transport layer 122, a quantum dot light emitting layer 123, a hole transport layer 124, and a hole injection layer 125, which are stacked on the conductive base layer 121 on the side facing the quantum dot infrared photodetector 11; the intermediate conductive layer 13 is located on a side of the hole injection layer 125 facing away from the conductive base layer 121; the quantum dot infrared photodetector 11 is disposed on a side of the intermediate conductive layer 13 away from the quantum dot light emitting diode 12, and includes a pixelated infrared quantum dot layer 111 and an electrode layer 112 stacked in a direction away from the intermediate conductive layer 13.
The quantum dot light emitting layer 123 is configured to emit visible light of at least two different colors; the infrared quantum dot layer 111 is used for receiving infrared light of different wave bands and plays a role of an infrared photoresistor, and the stronger the intensity of the infrared light received by the infrared quantum dot layer 111 is, the smaller the resistance of the infrared light is; the quantum dot light emitting layers 123 correspond to the infrared quantum dot layers 111 one by one in the vertical direction.
Illustratively, as shown in fig. 4, a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided for the embodiment of the present disclosure is shown. Referring to fig. 4, the focal plane device includes, from bottom to top, a conductive substrate layer 121, an electron transport layer 122, a quantum dot light emitting layer 123, a hole transport layer 124, a hole injection layer 125, an intermediate conductive layer 13, a pixelated infrared quantum dot layer 111, and an electrode layer 112, in which the respective structural layers are electrically connected in series, and the electrode layer 112 and the conductive substrate layer 121 are respectively connected to the positive electrode and the negative electrode of the external power supply 2. The working principle of the focal plane device is as follows: the focal plane device is connected with an external power supply 2 with constant voltage, at the moment, the current in the device is lower than the starting current of the quantum dot light-emitting layer 123, and the quantum dot light-emitting layer 123 does not emit light; when the infrared quantum dot layer 111 receives infrared light of different wavebands, the internal resistance thereof is correspondingly reduced, the current of the quantum dot light emitting layer 123 connected in series therewith is increased, and the quantum dot light emitting layer 123 emits visible light of corresponding colors (red, green, blue). When the intensity of the infrared light received by the infrared quantum dot layer 111 is stronger, the resistance thereof is lower, and the visible light emitted by the corresponding quantum dot light emitting layer 123 is stronger.
It should be noted that, in fig. 4, the voltage value of the external power supply of the focal plane device is in the range of 2-20V, and needs to be adjusted according to the constitution of the finished device; the external power source 2 may also include other circuit structures known to those skilled in the art, which are not limited and are not described herein.
It can be understood that fig. 4 only shows the quantum dot light emitting layer 123 as an example, which can emit visible light of three colors of red, green and blue, but does not constitute a limitation to the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the quantum dot light emitting layer 123 may emit visible light of colors other than red, green, and blue, as known to those skilled in the art, and is not limited herein.
In the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the disclosure, when the infrared quantum dot layer 111 receives infrared light of different wavebands, the internal resistance thereof is reduced, the current of the quantum dot light-emitting layer 123 connected in series therewith is increased, and when the current is larger than the starting current of the quantum dot light-emitting layer 123, the quantum dot light-emitting layer 123 emits visible light of a corresponding color; the stronger the infrared light intensity received by the infrared quantum dot pixel is, the lower the resistance is, and the stronger the visible light emitted by the corresponding quantum dot light-emitting layer pixel is. Therefore, when the quantum dot infrared light detector 11 receives infrared light with different wave bands and intensities, the resistance thereof changes correspondingly, and then the quantum dot light emitting diode 12 emits visible light with corresponding colors and intensities, thereby realizing true color image display of infrared images with different wave bands. The focal plane device saves a reading circuit and a structural device for digital signal processing, does not need to be welded with an indium column, has simple and compact structure, simplifies the manufacturing flow of the device, reduces the complexity of the working procedure and reduces the manufacturing cost. Meanwhile, the focal plane device generates a photon-generated carrier in the quantum dot light-emitting diode by utilizing the inner photoelectric effect, so that the noise of photoelectron motion generated by utilizing the outer photoelectric effect such as an image tube is reduced.
In some embodiments, as shown in fig. 5, a schematic structural diagram of another infrared-multicolor up-conversion imaging focal plane device provided for the embodiments of the present disclosure is shown. Referring to fig. 5, the conductive base layer 121 includes indium tin oxide (ITO, In)2O3:SnO2) Conductive glass, fluorine doped tin oxide (FTO, SnO)2: F) a conductive glass or flexible conductive substrate layer; the electron transport layer 122 includes zinc oxide (ZnO) nanoparticles, tin oxide (SnO)2) Nanoparticles, zinc magnesium oxide (ZnMgO) nanoparticles and titanium oxide (TiO)2) At least one of nanoparticles; the quantum dot light emitting layer 123 includes at least one of a cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot film, a cadmium selenide/cadmium sulfide/zinc sulfide (CdSe/CdS/ZnS) quantum dot film, a perovskite quantum dot film, and a zinc phosphide (InP) quantum dot film; the hole transport layer 124 includes 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP) and/or poly 3, 4-ethylenedioxythiophene/polystyrene sulfonate (PEDOT: PSS); the material of the hole injection layer 125 is molybdenum oxide (MoO)3) (ii) a The material of the intermediate conductive layer 13 includes gold (Au), silver (Ag), and aluminum (Al)The intermediate conductive layer 13 constitutes a pixelized metal electrode layer; the infrared quantum dot layer 111 comprises a plurality of layers of quantum dot films, the quantum dot films are subjected to liquid ligand exchange treatment, surface ligands are SH-short chain ligands, and the quantum dot films are at least one of mercury telluride (HgTe) quantum dot films, mercury selenide (HgSe) quantum dot films, lead sulfide (PbS) quantum dot films and lead selenide (PbSe) quantum dot films; the material of the electrode layer 112 includes at least one of gold (Au), silver (Ag), and aluminum (Al).
Wherein, the conductive substrate layer 121 can be configured as a rigid conductive substrate layer (such as ITO conductive glass or FTO conductive glass) or a flexible conductive substrate layer, and when the conductive substrate layer 121 adopts a flexible conductive substrate layer, the correspondingly formed device can be used as a flexible detector or can be used in a wearable device; the material of the electrode layer 112 is at least one of Au, Ag and Al; the electrode layer 112 and the conductive substrate layer 121 are connected to the positive and negative electrodes of an external power supply, respectively.
The material of the middle conductive layer 13 is at least one of Au, Ag and Al, which can reduce the attenuation of signals, and is beneficial to ensuring high-intensity electrical signals and high signal-to-noise ratio, thereby having better detection and imaging effects.
With the arrangement, the infrared-multicolor upper conversion imaging focal plane device not only has the advantages of true color image display, simple and compact structure, low manufacturing cost and low photoelectronic motion noise, but also has the advantages of high quantum efficiency and low driving voltage.
Exemplarily, as shown in fig. 5, the material of the conductive substrate layer 121 is ITO conductive glass; the electron transport layer 122 is made of ZnO nanoparticles; the quantum dot light-emitting layer 123 is made of a CdSe/ZnS quantum dot film; the material of the hole transport layer 124 is 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP); the material of the hole injection layer 125 is MoO3(ii) a The middle conductive layer 13 is made of Au and forms a pixilated metal electrode layer; the infrared quantum dot layer 111 is made of a multilayer HgTe quantum dot film; the material of the electrode layer 112 is Au.
It is to be understood that fig. 5 only illustrates the material types of the film layers of the infrared-multicolor up-conversion imaging focal plane device, but does not constitute a limitation to the infrared-multicolor up-conversion imaging focal plane device provided by the embodiments of the present disclosure; in other embodiments, the materials of the film layers may be selected from other materials known to those skilled in the art according to the requirements of the focal plane device, and are not limited herein.
In some embodiments, as shown in FIG. 5, the electron transport layer 122 has a thickness of 20nm to 40 nm; the thickness of the quantum dot light-emitting layer 123 is 15 nm-25 nm; the thickness of the hole transport layer 124 is 200nm to 400 nm; the thickness of the hole injection layer 125 is 50nm to 200 nm; the thickness of the intermediate conductive layer 13 is 300nm to 500 nm; the thickness of the infrared quantum dot layer 111 is 200nm-1 μm; the thickness of the electrode layer 112 is 100nm to 400 nm.
The thickness of the quantum dot light-emitting layer 123 is set to be 15 nm-25 nm, so that on one hand, the quantum dot light-emitting layer 123 can completely cover the lower electron transport layer 122, the electron transport layer 122 is isolated from the hole transport layer 124, and the short circuit of the circuit is prevented; on the other hand, the thickness of the quantum dot light-emitting layer 123 is controlled to be smaller, and the travel distance of electrons from the electron transport layer and holes from the hole transport layer is shortened, so that the electrons and the holes can be effectively combined to emit light, and the light-emitting efficiency of the quantum dot light-emitting layer 123 is improved.
The thickness of the infrared quantum dot layer 111 determines the resistance value thereof, which affects the light emitting efficiency of the quantum dot light emitting layer 123, and therefore the thickness of the infrared quantum dot layer 111 needs to be matched with the quantum dot light emitting layer 123. The current of the quantum dot light emitting layer 123 increases with the increase of the voltage, the light emitting intensity also increases correspondingly, when the voltage increases to a certain limit value, the quantum dot light emitting layer 123 breaks down, there is an optimal light emitting efficiency interval between the initial value of the voltage and the breakdown value, and the light emitting efficiency linearly increases with the increase of the voltage in the interval, which is used as the voltage value of the external power supply and the resistance value of the infrared quantum dot layer 111 (i.e. the thickness of the infrared quantum dot layer 111) required by calculation.
It is to be understood that the thicknesses of the film layers of the infrared-polychromatic up-conversion imaging focal plane device are only exemplarily shown in fig. 5, but do not constitute a limitation of the infrared-polychromatic up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the thickness of each film layer material may be set to other thicknesses according to the requirements of the focal plane device, and is not limited herein.
In some embodiments, as shown in fig. 3-5, infrared quantum dot layer 111 and quantum dot light emitting layer 123 are arranged as a corresponding array pixel structure; the infrared quantum dot layer 111 arranged in an array pixel structure is used for responding to infrared light of different wave bands, so that the pixels of the quantum light emitting layer 123 emit visible light of different colors.
The array pixel structures of the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 correspond to each other in the vertical direction.
In this embodiment, when the array pixel structure of the infrared quantum dot layer 111 receives infrared light of different bands, each array pixel structure responds to the infrared light of the corresponding band, the internal resistance thereof changes, the current of the array pixel structure of the quantum dot light-emitting layer 123 corresponding thereto increases, and when the current is greater than the turn-on current of the quantum dot light-emitting layer 123, the array pixel structure of the quantum dot light-emitting layer 123 emits visible light of the corresponding color; the stronger the infrared light intensity received by the infrared quantum dot pixel is, the lower the resistance is, and the stronger the visible light emitted by the corresponding quantum dot light-emitting layer pixel is. According to the arrangement, the infrared-multicolor upper conversion imaging focal plane device can convert received infrared light with different wave bands into visible light with more colors, and real-color image display of infrared images with different wave bands is realized.
Illustratively, as shown in fig. 3 or fig. 5, the array pixel structures arranged by the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 are three, and the array pixel structures correspond to one another in the vertical direction.
Illustratively, as shown in fig. 4, the array pixel structures of the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 are six, and the array pixel structures correspond to one another in the vertical direction.
It can be understood that fig. 3-5 only exemplarily show the number of the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 disposed array pixel structures, but do not constitute a limitation of the infrared-multicolor up-conversion imaging focal plane device provided by the embodiments of the present disclosure; in other embodiments, the number of the infrared quantum dot layer 111 and the quantum dot light emitting layer 123 array pixel structures may be set according to the requirement of the focal plane device, and is not limited herein.
In some embodiments, as shown in FIG. 4, infrared quantum dot layer 111 of the array pixel structure comprises first detection pixel 1111, second detection pixel 1112, and third detection pixel 1113; the first detection pixel 1111 is used for detecting infrared light of a first wavelength band, the second detection pixel 1112 is used for detecting infrared light of a second wavelength band, and the third detection pixel 1113 is used for detecting infrared light of a third wavelength band; the wavelength range of the first wave band is 0.7-2.5 μm; the wavelength range of the second wave band is 3.0-5.0 μm; the wavelength range of the third band is 8.0 μm to 12.0. mu.m.
According to the arrangement, the infrared-multicolor upper conversion imaging focal plane device can convert the medium-long wave infrared images of different wave bands into true color images for display.
In some embodiments, as shown in fig. 4, quantum dot light-emitting layer 123 of array pixel structure includes corresponding first light-emitting pixel 1231, second light-emitting pixel 1232, and third light-emitting pixel 1233; the first light-emitting pixel 1231 corresponds to the first detection pixel 1111 and is configured to emit visible light of a first color; a second light-emitting pixel 1232, corresponding to the second detecting pixel 1112, is configured to emit visible light of a second color; the third light-emitting pixel 1233 corresponds to the third detecting pixel 1113 and is configured to emit visible light of a third color; the first color, the second color, and the third color are different from each other to realize a color display.
According to the arrangement, the infrared-multicolor upper conversion imaging focal plane device can convert the medium-long wave infrared images of different wave bands into true color images of three colors for display.
Illustratively, as shown in fig. 4, the number of the array pixel structures arranged by the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 is six, the six array pixel structures correspond to each other in the vertical direction one by one, the first light-emitting pixel 1231 corresponds to the first detection pixel 1111, the second light-emitting pixel 1232 corresponds to the second detection pixel 1112, and the third light-emitting pixel 1233 corresponds to the third detection pixel 1113; the infrared quantum dot layer 111 array pixel structure is sequentially arranged from left to right according to the sequence of the first detection pixel 1111, the second detection pixel 1112 and the third detection pixel 1113; the quantum dot light-emitting layer 123 array pixel structure is sequentially arranged from left to right according to the sequence of a first light-emitting pixel 1231, a second light-emitting pixel 1232 and a third light-emitting pixel 1233; the first detection pixel 1111 is used for detecting infrared light of a first wave band (0.7-2.5 microns), the second detection pixel 1112 is used for detecting infrared light of a second wave band (3.0-5.0 microns), and the third detection pixel 1113 is used for detecting infrared light of a third wave band (8.0-12.0 microns); when the first detection pixel 1111, the second detection pixel 1112 and the third detection pixel 1113 receive infrared light of corresponding wave bands, the internal resistance of the first detection pixel 1111, the second detection pixel 1112 and the third detection pixel 1113 corresponding to the first detection pixel 1112, the current of the first detection pixel 1111, the second detection pixel 1112 and the third detection pixel 1113 is increased, and when the current is greater than the starting current of the quantum dot light emitting layer 123, the first detection pixel 1111, the second detection pixel 1112 and the third detection pixel 1113 respectively emit visible light of three colors, namely red and green and blue, so that the conversion of medium-long wave infrared images of different wave bands into true color images of three colors is realized.
Illustratively, as shown in fig. 5, the infrared quantum dot layer 111 of the array pixel structure includes an a-type HgTe quantum dot film, a B-type HgTe quantum dot film, and a C-type HgTe quantum dot film, which can detect infrared light of a first wavelength band (0.7 μm to 2.5 μm), a second wavelength band (3.0 μm to 5.0 μm), and a third wavelength band (8.0 μm to 12.0 μm), respectively; when the first detection image; the quantum dot light-emitting layer 123 of the array pixel structure comprises a CdSe/ZnS quantum dot film (R), a CdSe/ZnS quantum dot film (G) and a CdSe/ZnS quantum dot film (B), and can respectively emit red, green and blue visible lights; the CdSe/ZnS quantum dot film (R) corresponds to an A model HgTe quantum dot film, the CdSe/ZnS quantum dot film (G) corresponds to a B model HgTe quantum dot film, and the CdSe/ZnS quantum dot film (B) corresponds to a C model HgTe quantum dot film. The focal plane device can convert medium-long wave infrared images of different wave bands into true color images of three colors for display.
It can be understood that fig. 4 or 5 only exemplarily shows that the infrared quantum dot layer 111 of the array pixel structure includes three types of detection pixels, and the quantum dot light-emitting layer 123 includes three light-emitting pixels corresponding to the three types of detection pixels, but does not constitute a limitation of the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the infrared quantum dot layer 111 and the quantum dot light-emitting layer 123 of the array pixel structure may further include more types of detection pixels or light-emitting pixels, that is, the infrared quantum dot layer 111 may also receive infrared light in other wavelength bands, and the quantum dot light-emitting layer 123 may also emit visible light in colors other than red, green, and blue, which is not limited herein.
It can be understood that fig. 4 only exemplarily shows that the infrared quantum dot layer 111 of the array pixel structure is sequentially arranged from left to right according to the sequence of the first detection pixel 1111, the second detection pixel 1112, and the third detection pixel 1113, and the quantum dot light-emitting layer 123 of the array pixel structure is sequentially arranged from left to right according to the sequence of the first light-emitting pixel 1231, the second light-emitting pixel 1232, and the third light-emitting pixel 1233, but does not constitute a limitation on the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, the arrangement order of the array pixel structure can also be set according to the requirement of the infrared-multicolor up-conversion imaging focal plane device, which is not limited herein.
Illustratively, as shown in fig. 6, a schematic diagram of the focal plane device shown in fig. 4 and an optical lens system for converting infrared light of different wavelength bands into visible light of different colors is shown. Referring to fig. 6, an object space focal plane 3 of infrared images of different wave bands is imaged on an image space focal plane of an optical system through an optical system 4, the image space focal plane of the optical system coincides with an infrared quantum dot layer 111 of an infrared-multicolor up-conversion imaging focal plane device 1, a first detection pixel 1111, a second detection pixel 1112 and a third detection pixel 1113 of the infrared quantum dot layer 111 respectively respond to infrared light of respective sensitive wave bands, a quantum dot light-emitting layer 123 displays an image 6 of three colors of red, green and blue under a vertically coupled structure, and the infrared image is converted into a true color image to be displayed in the whole device.
In some embodiments, as shown in fig. 3-5, the intermediate conductive layers 13 are correspondingly arranged in an array pixel structure to realize respective conductive connections of the corresponding pixels.
Illustratively, as shown in fig. 3 to 5, the intermediate conductive layer 13 is provided as an array pixel structure in one-to-one correspondence with the infrared quantum dot layer 111 in the vertical direction; the middle conducting layer 13 of each pixel is used for communicating the corresponding quantum dot infrared photoelectric detector 11 and the quantum dot light-emitting diode 12 so as to realize transmission of electric signals therein.
The material of the intermediate conductive layer 13 is, for example, Au or other conductive metal or non-metal material, and is not limited herein.
Based on the same inventive concept, the embodiment of the present disclosure further provides a method for preparing an infrared-multicolor up-conversion imaging focal plane device, and the preparation method can be used for preparing any one of the infrared-multicolor up-conversion imaging focal plane devices provided in the embodiments, and has corresponding beneficial effects, and the same parts can be understood with reference to the above description, and are not described in detail hereinafter.
The following describes an exemplary method for manufacturing an infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure with reference to fig. 7 to 10.
In some embodiments, as shown in fig. 7, a schematic flow chart of a method for manufacturing an infrared-multicolor up-conversion imaging focal plane device is provided in the embodiments of the present disclosure. Referring to fig. 7, the preparation method includes:
and S101, forming a quantum dot light emitting diode.
And S102, forming an intermediate conducting layer on the quantum dot light-emitting diode.
And S103, forming a quantum dot infrared photoelectric detector on one side of the middle conducting layer, which is far away from the quantum dot light-emitting diode.
The quantum dot infrared photoelectric detector and the quantum dot light-emitting diode are connected in series through the middle conducting layer; the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting visible light with different colors.
It can be understood that the preparation method of forming the quantum dot infrared photodetector after forming the quantum dot light emitting diode is only exemplarily shown in fig. 7, but does not constitute a limitation on the preparation method of the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, as shown in fig. 8, the method for manufacturing an infrared-multicolor up-conversion imaging focal plane device may further form a quantum dot infrared photodetector and then form a quantum dot light emitting diode, which is not limited herein.
In some embodiments, fig. 9 is a schematic flow chart diagram of yet another method for producing an ir-multicolor up-conversion imaging focal plane device provided by embodiments of the present disclosure. Referring to fig. 9, the preparation method includes:
s301, cleaning the conductive base layer, and performing plasma treatment.
Wherein, the conductive substrate layer is preferably ITO transparent conductive glass; the pretreatment time of the oxygen plasma is 5 min-10 min.
S302, forming an electron transport layer on the conductive substrate layer in a spin coating mode.
The electron transport layer material is preferably ZnO nanoparticles, and the precursor solution is prepared from ZnO nano dispersion liquid and isopropanol, wherein the concentration is 20 mg/ml-100 mg/ml; spin coating parameters: the rotating speed is 2000rpm, the temperature is 40-50 ℃, and the spin coating time is 10 s; annealing parameters: the temperature is 70-100 ℃, the annealing time is 30-60 min, and the annealing environment is oxygen-free and water-free.
Incidentally, SnO is2The preparation process and parameters of the nanoparticle electron transport layer are similar to those of the ZnO nanoparticle electron transport layer, and are not repeated here.
And S303, performing mask spraying on the electron transmission layer to form a pixelized quantum dot light-emitting layer.
The preparation method of the three-color quantum dot of the quantum dot luminescent layer precursor liquid comprises the following steps: dissolving the precursor solution in toluene to prepare a quantum dot light-emitting layer precursor solution with the concentration of 50 mg/mL-100 mg/mL; and sequentially spraying or photoetching the three quantum dot light emitting layers by using different masks to ensure that the three quantum dot light emitting layers are uniformly distributed and laminated on the whole electron transmission layer, wherein the annealing temperature is 70-90 ℃, the annealing time is 30-60 min, and the annealing environment is oxygen-free and water-free.
In other embodiments, the quantum dot light emitting layer may be formed by printing or photolithography deposition, which is not limited herein.
And S304, sequentially forming a hole transport layer and a hole injection layer on the quantum dot light emitting layer.
Wherein, a coating machine is adopted to carry out vacuum thermal evaporation to form a hole transport layer and a hole injection layer in sequence. The hole transport layer is made of 4,4 '-bis (N-carbazole) -1,1' -biphenyl (CBP), the thickness of the film layer is 200 nm-400 nm, and the evaporation rate is
The material of the hole injection layer is MoO3(ii) a MoO by vacuum thermal evaporation3，MoO3The thickness of the film layer is 50 nm-200 nm, and the evaporation rate is
And S305, forming a corresponding pixelated intermediate conductive layer on the hole injection layer by mask evaporation.
Wherein the evaporation rate of the intermediate conductive layer is
The thickness of the film layer is 300 nm-500 nm; the position and the size of the middle conductive layer evaporated by the mask correspond to the pixelated quantum dot light-emitting layer.
And S306, performing mask spraying on the middle conducting layer to form a corresponding pixilated infrared quantum dot layer.
Different types of infrared quantum dot layer precursor liquid are required to be configured before a pixelized infrared quantum dot layer is formed, the type A infrared quantum dot layer precursor liquid responds to infrared light with the wavelength range of 0.7-2.5 microns, the type B infrared quantum dot layer precursor liquid responds to infrared light with the wavelength range of 3-5 microns, and the type C infrared quantum dot layer precursor liquid responds to infrared light with the wavelength range of 8-12 microns.
The forming method of the infrared quantum dot layer comprises the following steps: and spraying or photoetching the precursor solution of the infrared quantum dot layer on the corresponding intermediate conducting layer by using different masks to obtain the HgTe quantum dot film, then carrying out ligand exchange and cleaning, and repeating the step for 9-10 times to obtain the infrared quantum dot layer containing 10 HgTe quantum dot films.
The infrared quantum dot layer comprises a plurality of layers of quantum dot films, the quantum dot films are subjected to liquid ligand exchange treatment, surface ligands are SH-short-chain ligands, and the quantum dot films are HgTe quantum dot films; the thickness of the infrared quantum dot layer is 200nm-1 μm.
In other embodiments, the infrared quantum dot layer may be formed by printing or photolithography deposition, but is not limited thereto.
And S307, forming an electrode layer on the infrared dot quantum dots.
Wherein, an electrode layer is formed by vacuum thermal evaporation, the thickness of the electrode layer is 100 nm-400 nm, and the evaporation rate is 0.5 μm-1.0 μm.
Illustratively, as shown in fig. 10, a schematic flow chart of a method for manufacturing an infrared-multicolor up-conversion imaging focal plane device provided by the embodiments of the present disclosure is shown. Referring to fig. 10, S303 is refined, and the three quantum dot light emitting layers of red, green, and blue are sequentially sprayed or photo-etched with different masks at corresponding positions on the electron transport layer, so that the three quantum dot light emitting layers are uniformly distributed and stacked on the whole electron transport layer, and the three quantum light emitting layers can convert the infrared light received by the infrared quantum dot layer corresponding to the three quantum dot light emitting layers into visible light of a corresponding color; and simultaneously, correspondingly refining the S306, and sequentially spraying or photoetching A, B, C three types of infrared quantum dot layers on the corresponding middle conducting layer by using different masks, wherein the three types of infrared quantum dot layers respectively respond to infrared light with different wave bands.
It should be understood that fig. 10 only exemplarily shows that S303 forms the red, green and blue quantum dot light emitting layers, and S306 forms A, B, C types of infrared quantum dot layers, but does not constitute a limitation on the method for preparing the infrared-multicolor up-conversion imaging focal plane device provided by the embodiment of the present disclosure; in other embodiments, S303 may also form quantum dot light emitting layers of other colors, the kinds of the quantum light emitting layers may be two, three or more, and S306 may also form infrared quantum dot layers of other types known to those skilled in the art, which is not limited herein.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. An infrared-multicolor up-conversion imaging focal plane device is characterized by comprising a quantum dot infrared photoelectric detector and a quantum dot light-emitting diode;
the quantum dot infrared photoelectric detector is connected with the quantum dot light-emitting diode in series through the middle conducting layer;
the quantum dot infrared light detector is used for detecting infrared light of different wave bands; correspondingly, the quantum dot light emitting diode is used for emitting visible light of at least two different colors.
2. The focal plane device of claim 1, wherein the quantum dot light emitting diode comprises a conductive substrate layer, and an electron transport layer, a quantum dot light emitting layer, a hole transport layer and a hole injection layer which are stacked on the conductive substrate layer on the side facing the quantum dot infrared photodetector;
the middle conducting layer is positioned on one side of the hole injection layer, which faces away from the conducting substrate layer;
the quantum dot infrared photoelectric detector is arranged on one side, deviating from the quantum dot light-emitting diode, of the middle conducting layer, and comprises a pixelated infrared quantum dot layer and an electrode layer which are stacked and arranged in the direction away from the middle conducting layer.
3. The focal plane device of claim 2, wherein the electron transport layer has a thickness of 20nm to 40 nm;
the thickness of the quantum dot light-emitting layer is 15 nm-25 nm;
the thickness of the hole transport layer is 200 nm-400 nm;
the thickness of the hole injection layer is 50 nm-200 nm;
the thickness of the middle conducting layer is 300 nm-500 nm;
the thickness of the infrared quantum dot layer is 200nm-1 μm;
the thickness of the electrode layer is 100 nm-400 nm.
4. The focal plane device of claim 2, wherein the infrared quantum dot layer and the quantum dot light emitting layer are arranged as a corresponding array pixel structure;
the infrared quantum dot layer arranged in the array pixel structure is used for responding to infrared light of different wave bands, so that pixels of the quantum light emitting layer emit visible light of different colors.
5. The focal plane device of claim 4, wherein the infrared quantum dot layer of the array pixel structure comprises a first detection pixel, a second detection pixel, and a third detection pixel;
the first detection pixel is used for detecting infrared light of a first waveband, the second detection pixel is used for detecting infrared light of a second waveband, and the third detection pixel is used for detecting infrared light of a third waveband;
the wavelength range of the first wave band is 0.7-2.5 mu m;
the wavelength range of the second wave band is 3.0-5.0 μm;
the wavelength range of the third wave band is 8.0-12.0 μm.
6. The focal plane device of claim 5, wherein the quantum dot light-emitting layer of the array pixel structure comprises corresponding first, second, and third light-emitting pixels;
the first light-emitting pixel corresponds to the first detection pixel and is used for emitting visible light of a first color;
the second light-emitting pixel corresponds to the second detection pixel and is used for emitting visible light of a second color;
the third light-emitting pixel corresponds to the third detection pixel and is used for emitting visible light of a third color;
the first color, the second color and the third color are different from each other to realize color display.
7. The focal plane device of claim 4, wherein the intermediate conductive layers are correspondingly arranged in an array pixel structure to realize respective conductive connections of the corresponding pixels.
8. The focal plane device of claim 4, wherein the electron transport layer, the hole injection layer, and the electrode layer are all of a unitary layer structure, shared by different array pixel structures.
9. The focal plane device of claim 2, wherein the quantum dot light emitting layer and the infrared quantum dot layer are both pixilated functional film layers formed by mask spraying, printing, mask evaporation or photolithographic deposition.
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