KR101653744B1 - Light Detector and Imaging Device Containing the Same - Google Patents
Light Detector and Imaging Device Containing the Same Download PDFInfo
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- KR101653744B1 KR101653744B1 KR1020090079721A KR20090079721A KR101653744B1 KR 101653744 B1 KR101653744 B1 KR 101653744B1 KR 1020090079721 A KR1020090079721 A KR 1020090079721A KR 20090079721 A KR20090079721 A KR 20090079721A KR 101653744 B1 KR101653744 B1 KR 101653744B1
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Abstract
As a technique related to a light receiving element including at least one color unit, by forming a light absorbing layer on the upper or lower portion of the color unit, it is possible to prevent the sensitivity of the color from decreasing and the effect of improving the color purity and contrast ratio. Further, since each color unit has a structure having a photoelectric conversion function by PN junction, it has a photoelectric conversion function, and therefore it is not necessary to use a separate color filter and a photodiode.
Description
The present invention relates to an image pickup device such as a light receiving element and an image sensor including the same.
The light receiving element is widely used for digital cameras, broadcasting cameras, surveillance cameras, computer image cameras, camcorders, automotive sensors, home sensors, and solar cells. In general, a light receiving element has a structure in which pixels are arranged, and the pixel is basically composed of a microlens, a color filter, and a photoelectric conversion element.
In recent years, competition for the number of pixels for high image quality has intensified, thereby reducing pixel size has become a hot topic. However, as the pixel size decreases, the amount of light reaching the photodiode also decreases. Such a decrease in the amount of light is a factor that deteriorates the performance of the light receiving element such as sensitivity reduction, false color development, moire phenomenon, resolution degradation, and the like.
Conventionally, a MOS capacitor or a PN junction diode using a compound semiconductor such as crystalline silicon, amorphous silicon, or GaAs has been used as a photoelectric conversion element. Since such a photoelectric conversion element performs only photoelectric conversion, it is necessary to include a separate color filter in order to select a light receiving area.
Conventionally, the use of a color filter has insufficient color separation, low color purity, reproducibility, driving voltage, and the like. Accordingly, there is a need to provide a light receiving element excellent in color sensitivity and contrast effect.
Unlike the case where the light receiving element is constituted by separate photoelectric conversion elements and color filters in the prior art, these functions can be integrated and provide a color unit excellent in color sensitivity and contrast effect.
In one example, the light receiving element may have one or a plurality of color units stacked, each of the color units may selectively absorb a wavelength of a specific color, and the P-type organic material layer and the N- And a light absorbing layer including a light absorber capable of absorbing light of a desired wavelength is formed on an upper portion or a lower portion of the color unit.
The color unit may be, for example, a blue unit, a green unit, a red unit, or the like. Further, the light absorbing layer may include a light absorber that absorbs a wavelength other than the wavelength absorbed by the color unit formed at the lower portion thereof, or a light absorber that absorbs the wavelength absorbed by the color unit formed on the upper portion.
According to still another embodiment of the present invention, there is provided an element such as an imaging element including the light receiving element. The device may be, for example, a CCD image sensor or a CMOS image sensor.
In the color unit according to the embodiments of the present invention, the function of the photoelectric conversion element and the function of the color filter are integrated, and the wavelength selectivity of the color unit can be enhanced. Therefore, an image pickup device such as a CMOS image sensor including the same as a unit of a light receiving element can be stably sensed, and therefore, is excellent in economic efficiency and industrial utility value.
Hereinafter, advantages and features of the present invention and methods of performing the same will be more readily understood by reference to the following detailed description of the embodiments and the accompanying drawings. However, it should be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.
The light receiving element according to one aspect has one or a plurality of color units stacked, each of the color units can selectively absorb a wavelength of a specific color, and the P-type organic material layer and the N-type organic material layer form a PN junction And a light absorbing layer including a light absorber capable of absorbing light of a desired wavelength is formed on an upper portion or a lower portion of the color unit.
In this way, when a predetermined light absorbing layer is formed, it is possible to prevent a specific wavelength leaked from reaching a color unit located at a lower portion by absorbing a specific wavelength emitted without being absorbed even though it should be absorbed in a color unit.
In another aspect, the wavelength selectivity can be increased by previously absorbing wavelengths other than the specific wavelength to be absorbed in the color unit. Therefore, it is possible to improve the sensitivity, purity and contrast ratio of color.
In this connection, Figs. 1 to 3 schematically show a cross-sectional view of a light-receiving element according to an aspect of the present invention. For convenience of explanation, the parts corresponding to Fig. 1 in Fig. 2-3 are denoted by the same reference numerals as those in Fig.
1, the
The color unit refers to a unit capable of selectively absorbing a wavelength of a specific color among visible light regions. Herein, the term " specific wavelength " means a wavelength selectively absorbed in a color unit. Here, the selective absorption means that the wavelength to be absorbed is mainly a desired wavelength, for example, 50% or more, 60% or more, or 70% or more. The approximate wavelength ranges according to color in the visible light region are shown in Table 1 below.
[Table 1]
(in vacuum)
Accordingly, the
Above the
The method of forming the light absorbing layer is not particularly limited and may be performed using, for example, vapor deposition, spin coating, sol-gel method, or the like.
The positions where the
For example, in a structure in which the
A blue
A
A
The
The
For example, the
The light absorbing
The light absorbing
In yet another aspect, the
The light absorber may be, for example, a coloring material having a complementary color relationship with the color of the color unit formed on the upper portion of the light absorbing layer containing the light absorber. Examples of the coloring material include, but are not limited to, organic dyes, organic pigments, and inorganic pigments.
For example, in the case of a laminated structure of blue, green and red, a light absorbing layer (first light absorbing layer) 420 formed under the
The
Examples of the orange-based coloring materials include CdS (cadmium sulfide) -based pigments. Since the CdS or its derivative absorbs the blue wavelength, the light absorbing layer in which the CdS powder is dispersed is disposed at the upper portion or the lower portion of the
The CdS pigment may be a material including ZnS (zinc sulfide), cadmium selenide, HgS (mercury sulfide), etc. in addition to CdS (cadmium sulfide). The CdS may have a particle diameter (D50) of several tens of nanometers to several tens of micrometers.
A
The
Each of the color units comprises a P-type organic material layer and an N-type organic material layer. Thus, a PN junction can be formed, thereby enabling photoelectric conversion. In addition, the P-type organic material layer or the N-type organic material layer may be formed using a material having selective transmittance of a wavelength so as to serve as a color filter. That is, the color unit may be a structure in which the functions of the photo diode and the color filter are integrated.
In this regard, Fig. 4 schematically shows a cross-sectional view of a color unit according to one aspect.
1 and 4, the color unit may have a structure in which a P-type
For example, the
In addition, an indoline layer (not shown) may be additionally formed between the P-type
In this structure, excitons are generated in the P-type
Fig. 5 schematically shows a cross-sectional view of a color unit according to another aspect.
1 and 5, the color unit includes a first P-type
The first P-type
In some cases, a portion of the first P-type
In one example, the color unit comprises a first P-type organic material layer made of phenyl hexa thiophene (P6T); An exciton blocking layer made of Bi-phenyl-tri-thiophene (BP3T); A second P-type organic material layer made of CuPc; An N-type organic material layer made of C 60 ; ≪ / RTI >
The P6T is expressed by the following chemical formula (1), and has a band gap energy of about 2.1 eV, and can selectively absorb blue wavelengths of 400 to 500 nm. Therefore, it can be effectively used for the first P-type
(One)
Also, the BP3T is represented by the following chemical formula (2), and can effectively block the blue wavelength in the range of 400 to 550 nm. In addition, since the band gap energy is about 2.3 eV, which is about 0.2 eV higher than that of P6T, it can be effectively used for the
(2)
The second P-type
The N-type
Excitons are generated in the first and second P-type organic material layers 121 and 122 by the light incident from the light receiving surface in the color unit according to the present example, and the first P- The light of a desired wavelength is incident on the second P-type
In some cases, each of the
A first electrode layer formed on the P-type organic material layer;
A first buffer layer formed between the first electrode layer and the P-type organic material layer;
(3) an intrinsic layer formed between the P-type organic material layer and the N-type organic material layer and having a p-type organic material and an n-type organic material adhered to each other;
(4) a second electrode layer formed under the N-type organic material layer; And
(5) a second buffer layer formed between the N-type organic material layer and the second electrode layer.
For example, in the case where a light absorbing layer is formed on the color unit, it may be formed in various laminated structures (in order from the light receiving surface side) such as the following i to v.
(i) a light absorbing layer / a first electrode layer / a first buffer layer / a p-type organic material layer / a phosphor layer / an n-type organic material layer / a second buffer layer /
(ii) light absorbing layer / first electrode layer / P-type organic material layer / intrinsic layer / N-type organic material layer / second buffer layer / second electrode layer
(iii) absorbing layer / first electrode layer / first buffer layer / P-type organic material layer / intrinsic layer / N-type organic material layer / second electrode layer
(iv) absorbing layer / first electrode layer / P-type organic material layer / intrinsic layer / N-type organic material layer / second electrode layer
(v) absorbing layer / first electrode layer / P-type organic material layer / N-type organic material layer / second electrode layer
In the color unit of such a laminated structure, when a negative voltage is applied to the first electrode and a positive voltage is applied to the second electrode, and light is incident from the light receiving surface, excitons of electron and hole pairs are formed. Such excitons are formed in a large amount in the p-type electrode layer, and electrons can flow through the N-type organic material layer and / or the buffer layer to the second electrode layer to generate a current in a desired wavelength range.
The first electrode layer and the second electrode layer may be transparent electrodes, and the first electrode layer may have a larger work function (WF) than the second electrode layer. The transparent electrode material, e.g., ITO, IZO, ZnO, SnO 2, ATO (antimony-doped tin oxide), AZO (Al-doped zinc oxide), GZO (gallium-doped zinc oxide), TiO 2 and FTO ( fluorine-doped tin oxide). The second electrode layer may be a metal electrode made of a metal selected from the group consisting of Al, Cu, Ti, Au, Pt, Ag, and Cr.
The first buffer layer may be polyethylene dioxythiophene / polystyrenesulfonic acid (PEDOT / PSS), but is not limited thereto. The second buffer layer may include at least one of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), LiF, copper phthalocyanine, polythiophene, polyaniline, But are not limited to, polyacetylene, polypyrrole, polyphenylenevinylene, derivatives thereof, and the like.
The intrinsic layer may be a layer in which a p-type organic material and an n-type organic material are notarized, and the p-type organic material may or may not be the same material as the material forming the p-type organic material layer. The n-type organic material may or may not be the same material as the n-type organic material layer. The intrin layer may be formed by, for example, CuPc as a p-type organic material and C 60 as an n-type organic material, but is not limited thereto.
For example, in the case of a red unit, a first electrode layer made of ITO, a hole transport layer made of PEDOT: PSS, a first P-type organic material layer made of P6T, and a first electrode layer made of BP3T a second electrode layer made of a formed exciton blocking layer, a second P-type organic material layer made of CuPc, CuPc and C 60 a ball the deposited STE Lin sikcheung, N-type made of a C 60 organic material layer, a buffer layer consisting of BCP, and Al ≪ / RTI > The CdS absorbs the blue light, thereby preventing the sensitivity of the red light and the decrease of the contrast caused by the blue light.
The exemplary light receiving element can be used for various photoelectric conversion elements. In one example, the device may be an imaging device such as, for example, a CCD image sensor or a CMOS image sensor.
The CMOS (Complementary Metal Oxide Semiconductor) image sensor includes a power control unit for controlling power supply; A light receiving unit CMOS that is supplied with power by the power supply control unit and receives light to generate an electrical signal; An output unit CMOS for outputting a signal received from the light receiving unit CMOS; . ≪ / RTI >
Conventionally, in the case of a pixel used in a light receiving unit, it has been difficult to control the pixel size by arranging pixels of blue, green, and red separately. On the other hand, the exemplary image sensor of the present invention is an organic photoelectric conversion system in which a plurality of color units that simultaneously perform photoelectric conversion and color filter functions are included and include light receiving elements.
Thus, by using a light-receiving element having a multilayer laminate structure which is excellent in color purity, sensitivity and contrast without using a color filter and a photodiode, it is advantageous in downsizing or large-sized. In addition, problems such as sensitivity reduction, false coloring, moiré phenomenon, resolution degradation, and the like, which occur when conventional color filter pixels are used, can be solved.
However, it is not necessary that all of the color units are color units of the type illustrated in the present invention. For example, when a red unit according to an example of the present invention is included, the blue unit or green unit may be a color unit made of a known inorganic semiconductor compound.
In a specific example, (i) an image sensor comprising an exemplary red color unit, a silicon-based green color unit and a silicon-based blue color unit of the present invention, (ii) a color unit for red of the exemplary organic photoelectric conversion system of the present invention, A green color unit, and an image sensor including an exemplary organic photoelectric conversion type blue color unit of the present invention may all be included in the scope of the present invention.
The image sensor can be widely used for a digital camera, a broadcasting camera, a surveillance camera, a computer image camera, a camcorder, an automobile sensor, a home sensor, a computer video call, and an IR sensor. In addition, since the light receiving element has a photoelectric conversion function, it can be effectively used for an organic thin film solar cell.
Hereinafter, the present invention will be described in detail according to an embodiment of the present invention.
[Comparative Example 1]
The ITO glass is washed with water / ultrasonic waves and methanol and acetone, followed by O 2 plasma treatment. A PEDOT: PSS film is formed to a thickness of 30 nm on the ITO glass by a spin coating method. Then, a CuPc layer, a C 60 layer, and a BCP layer are sequentially deposited at a deposition rate of 1 Å / s at a pressure of 1 × 10 -7 torr by thermal evaporation. Thereafter, by depositing an Al electrode of 100 nm thick on the BCP layer at a deposition rate of approximately 5Å / s, ITO / PEDOT: to produce a PSS / CuPc / C 60 / BCP / Al color unit of the stack structure.
[Example 1]
Forming a CdS layer on the ITO on the color unit of Comparative Example 1, CdS / ITO / PEDOT: to produce a PSS / CuPc / C 60 / BCP / Al color unit of the stack structure.
[Experimental Example 1] Incident Photon to Current Efficiency (IPCE) measurement
Monochromatic light was sequentially irradiated to the color units manufactured in Comparative Example 1 and Example 1 in the order of the visible light wavelength in the ITO layer direction and the external quantum efficiency was measured according to the wavelength band. 6 to 7 (Fig. 6: Comparative Example 1, Fig. 7: Example 1). A function generator (Hokudo Denko, Ltd., HB-104) was used, using a monochromatic light with a xenon lamp and a monochromator.
Referring to FIG. 6-7, it can be seen that IPCE at 400 nm to 500 nm hardly occurs in Example 1 in which the light absorbing layer including CdS was formed according to Example 1. It is presumed that the CdS layer absorbs the wavelength of 400 nm to 500 nm. Therefore, it can be seen that the light receiving element according to the first embodiment can prevent the blue wavelength region from being absorbed by the red unit, so that the color sensitivity, purity and contrast ratio of the red unit can be increased.
Those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
1 is a sectional view of a light receiving element according to an example of the present invention;
2 is a cross-sectional view of a light receiving element according to another example of the present invention;
3 is a sectional view of a light receiving element according to another example of the present invention;
Figure 4 is a cross-sectional view of a color unit according to an example of the present invention;
5 is a cross-sectional view of a color unit according to another example of the present invention;
6 is a result of an experiment of Comparative Example 1 according to Experimental Example 1;
Fig. 7 shows the experimental results of Example 1 according to Experimental Example 1. Fig.
DESCRIPTION OF THE RELATED ART [0002]
100: Blue unit 200: Green unit
300:
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JP2003167243A (en) * | 2001-11-29 | 2003-06-13 | Sony Corp | Color filter, semitransmission type color liquid crystal display device and electronic instrument |
JP2007287930A (en) * | 2006-04-17 | 2007-11-01 | Fujifilm Corp | Solid-state imaging element |
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JP2003167243A (en) * | 2001-11-29 | 2003-06-13 | Sony Corp | Color filter, semitransmission type color liquid crystal display device and electronic instrument |
JP2007287930A (en) * | 2006-04-17 | 2007-11-01 | Fujifilm Corp | Solid-state imaging element |
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US11869909B2 (en) | 2020-07-20 | 2024-01-09 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices |
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